KR20080038582A - Led - Google Patents

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KR20080038582A
KR20080038582A KR1020060105642A KR20060105642A KR20080038582A KR 20080038582 A KR20080038582 A KR 20080038582A KR 1020060105642 A KR1020060105642 A KR 1020060105642A KR 20060105642 A KR20060105642 A KR 20060105642A KR 20080038582 A KR20080038582 A KR 20080038582A
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South Korea
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light
light emitting
emitting device
phosphor
chip
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KR1020060105642A
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Korean (ko)
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김영섭
김경수
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한국 고덴시 주식회사
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Publication of KR20080038582A publication Critical patent/KR20080038582A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48111—Disposition the wire connector extending above another semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

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Abstract

A semiconductor light emitting device is provided to simplify a manufacturing process by using a light emitting element chip for emitting blue light and green light and mixing a red fluorescent pigment with an epoxy. A terminal unit includes an anode electrode(11) and a cathode electrode(12). A light emitting element chip(15) is mounted in a reflective cup(13) which is formed at an upper end of one of the anode and cathode electrodes. The light emitting element chip is electrically connected to the anode and cathode electrodes by using a connective member in order to emit blue light and green light. A fluorescent material(18) is excited by the light emitting element chip, in order to emit red light. A light transmitting resin layer(17) is formed to seal the light emitting chip.

Description

반도체 발광장치{LED}Semiconductor light emitting device {LED}

도 1은 종래의 반도체 발광장치의 일예를 도시한 단면도,1 is a cross-sectional view showing an example of a conventional semiconductor light emitting device;

도 2는 본 발명의 반도체 발광장치를 도시한 단면도.2 is a cross-sectional view showing a semiconductor light emitting device of the present invention.

<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>

11 : 애노드전극 12 : 캐소드전극11 anode electrode 12 cathode electrode

13 : 반사컵 15 : 발광다이오드칩13 reflection cup 15 light emitting diode chip

16 : 와이어 17 : 에폭시 수지16: wire 17: epoxy resin

18 : 형광체18: phosphor

본 발명은 반도체 발광장치에 관한 것으로, 보다 상세하게는 구조가 간단하여 제조공정을 단순할 수 있는 반도체 발광장치에 관한 것이다.The present invention relates to a semiconductor light emitting device, and more particularly, to a semiconductor light emitting device having a simple structure and a simple manufacturing process.

발광다이오드(LED : Light Emitting Diode)는 소형이고 효율적으로 선명한 색의 광을 발광할 수 있으며, 반도체 소자이기 때문에 소실 염려가 없고, 초기 구동특성 및 내진성이 뛰어나고, ON/OFF 점등의 반복에 강하다는 특징을 갖는다. 이에 따라, 각종 인디케이터와 여러 가지 광원으로서 널리 이용되고 있다.Light Emitting Diodes (LEDs) are compact and can efficiently emit light of vivid color, and because they are semiconductor devices, there is no fear of loss, excellent initial driving characteristics and shock resistance, and strong resistance to ON / OFF lighting repeatedly. Has characteristics. Accordingly, it is widely used as various indicators and various light sources.

최근에는 발광 다이오드를 이용해서 백색 발광 광원을 구성하는 시도가 여러 가지로 이루어지고 있다.Recently, various attempts have been made to construct a white light source using a light emitting diode.

일반적으로, 발광 다이오드를 이용해서 백색광을 얻기 위해서는 발광 다이오드가 단색성 피크 파장을 가지므로 예를 들어 R, G, B 3가지 발광소자를 근접 설치하여 발광시켜 확산 혼색시킬 필요가 있다. 이러한 구성으로 백색광을 발생시키고자 했을 경우, 발광소자의 색조나 휘도 등의 변화로 인해 원하는 백색광을 발생시킬 수 없는 문제점이 있었다. 또, 발광소자가 각각 다른 재료로 형성되어 있으므로 각 발광소자의 구동전력 등이 잘라 각각에 소정의 전압을 인가해야 하므로, 구동회로가 복잡해지는 문제점이 있었다.In general, in order to obtain white light using a light emitting diode, since the light emitting diode has a monochromatic peak wavelength, it is necessary to provide three light emitting elements in close proximity and emit light by diffusing and mixing the light. When white light is to be generated in such a configuration, there is a problem in that desired white light cannot be generated due to a change in color tone or luminance of the light emitting device. In addition, since the light emitting elements are formed of different materials, the driving power of each light emitting element is cut off, and a predetermined voltage must be applied to each of the light emitting elements.

이러한 문제점을 해결하기 위해 광을 발생시키는 1 종류의 발광소자와 상기 발광 소자로부터 발광된 광을 색변환시켜 파장이 상이한 광을 발광시키는 형광체를 이용하여 백색광 또는 다른 발광색을 얻을 수 있다.In order to solve this problem, white light or another light emitting color can be obtained by using one type of light emitting device that generates light and a phosphor that emits light having a different wavelength by color conversion of light emitted from the light emitting device.

예를 들어, 발광층의 에너지 밴드갭이 큰 발광소자를 리드 프레임의 선단에 설치된 반사컵 상에 배치하고, 발광소자를 피복하는 수지몰드 부재 속에 발광소자로부터의 광을 흡수해서 흡수된 광과 파장이 다른 광을 발광시키는(파장 변환) 형광체를 함유시켜 구성한다. 이때, 발광소자로는 청색계 발광이 가능한 발광소자를 이용하고, 해당 발광소자를 그 발광을 흡수해서 황색계 광을 발광시키는 형광체를 함유한 수지에 의해 몰드함으로써, 혼색에 의해 백색계 광을 발광시킬 수 있는 발광 다이오드를 제작할 수 있다. For example, a light emitting device having a large energy band gap of the light emitting layer is disposed on a reflecting cup provided at the tip of the lead frame, and the light and wavelength absorbed by absorbing light from the light emitting device are absorbed in a resin mold member covering the light emitting device. It is comprised by containing the fluorescent substance which emits other light (wavelength conversion). At this time, as a light emitting element, a light emitting element capable of emitting blue light is used, and the light emitting element is molded from a resin containing a phosphor that absorbs the light emission and emits yellow light, thereby emitting white light by mixing color. A light emitting diode can be manufactured.

하지만, 이와 같이, 청색 발광소자와 황색 형광체를 이용하는 경우, 청색 발 광소자로부터 발광된 광이 형광체를 경유하면서 황색광을 발광시키게 되는데, 이때 청색광이 형광체를 경유하면서 에너지가 손실되어 보다 낮은 에너지를 갖는 황색광이 발광되게 된다. 이와 같이 청색광의 일부가 형광체를 여기시켜 황색광을 만드는데 사용되게 됨에 따라 청색광의 손실이 발생되어 전체적인 광의 세기가 약해지는 문제점이 있었다.However, when the blue light emitting device and the yellow phosphor are used as described above, the light emitted from the blue light emitting device emits yellow light while passing through the phosphor, and the blue light passes through the phosphor to lose energy and thus lower energy. Yellow light which has is made to emit light. As a part of the blue light is used to excite the phosphor to produce yellow light, there is a problem that the loss of blue light occurs, the overall light intensity is weakened.

한편, 자외선을 발광시키는 발광소자와 R, G, B 형광체를 조합하여 백색광을 얻을 수도 있다. 하지만, 이와 같이 자외선 발광소자와 R, G, B 형광체의 조합으로 백색광을 얻게 되는 경우, 고에너지를 갖는 자외선에 의해 형광체 표면이 손상받기 쉬워 결과적으로 형광체의 발광 수명을 단축시키는 문제점이 있었다.On the other hand, white light can also be obtained by combining the light emitting element emitting ultraviolet light and the R, G, and B phosphors. However, when white light is obtained by the combination of the ultraviolet light emitting element and the R, G, and B phosphors, the surface of the phosphor is easily damaged by ultraviolet rays having high energy, resulting in a shortening of the light emission life of the phosphor.

첨부한 도 1은 종래의 반도체 발광장치의 일예를 도시한 단면도로서, 애노드전극(1) 및 캐소드전극(2)으로 이루어지는 리드프레임이 마련되고, 상기 캐소드전극(2)의 상단(8)에 형성된 반사컵(3) 내에 제1 및 제2 발광다이오드칩(4,5)이 실장되고, 상기 발광다이오드칩(4, 5)을 봉지하는 에폭시 수지(7)에 분말 형태의 형광체(8)가 혼합되어 백색광을 얻는 구조를 갖는다.1 is a cross-sectional view illustrating an example of a conventional semiconductor light emitting device, and includes a lead frame including an anode electrode 1 and a cathode electrode 2, and is formed on an upper end 8 of the cathode electrode 2. The first and second light emitting diode chips 4 and 5 are mounted in the reflecting cup 3, and the powdered phosphor 8 is mixed with the epoxy resin 7 encapsulating the light emitting diode chips 4 and 5. To obtain white light.

여기서, 상기 제1 발광다이오드칩(4)은 청색광을 발광시키는 발광소자이고, 상기 제2 발광다이오드칩(5)은 녹색광을 발광시키는 발광소자이며, 상기 형광체(8)는 상기 제1 발광다이오드칩(4) 또는 제2 발광다이오드칩(5)에 의해 여기되어 적색광을 발광시키는 형광물질로 이루어진다.Here, the first light emitting diode chip 4 is a light emitting device for emitting blue light, the second light emitting diode chip 5 is a light emitting device for emitting green light, and the phosphor 8 is the first light emitting diode chip. (4) or a fluorescent material excited by the second light emitting diode chip 5 to emit red light.

그러나, 이와 같은 종래의 반도체 발광장치는 패키지에 청색광을 발광시키는 발광소자와 녹색광을 발광시키는 발광소자를 각각 설치하여, 2종류의 칩을 사용하 여야 하므로 백색 구현 시 제조공정이 복잡해진다. However, such a conventional semiconductor light emitting device is provided with a light emitting device for emitting blue light and a light emitting device for emitting green light, respectively, in the package, so that two types of chips must be used.

또한, 청색광을 발광시키는 블루 칩(4)과 녹색광을 발광시키는 그린 칩(5)에 적색광을 발광시키기 위해 녹색 형광안료(ZnS:Cu.Au.Al)와 적색 형광안료(Y2O2S:EU)를 동시에 사용함으로 인하여, 제조 과정 시 에폭시와 녹색 형광안료 (ZnS:Cu.Au.Al)와 적색 형광안료(Y2O2S:EU)를 혼합함으로써 제조과정이 복잡한 문제점이 있는 것이다.In addition, green fluorescent pigments (ZnS: Cu.Au.Al) and red fluorescent pigments (Y2O2S: EU) are simultaneously used to emit red light to the blue chip 4 emitting blue light and the green chip 5 emitting green light. Due to the use, the manufacturing process is complicated by mixing epoxy and green fluorescent pigment (ZnS: Cu.Au.Al) and red fluorescent pigment (Y2O2S: EU) during the manufacturing process.

따라서, 본 발명은 상기와 같은 종래 기술의 문제점을 감안하여 안출한 것으로서, 청색광을 발광하는 동시에 녹색광을 발광하는 발광소자칩을 한 개만 사용하고 에폭시에 적색 형광안료를 혼합하여 사용함으로써, 제조공정을 단순화할 수 있는 반도체 발광장치를 제공하는데, 그 목적이 있다.Accordingly, the present invention has been made in view of the above-described problems of the prior art, by using only one light emitting device chip that emits blue light and emits green light, and uses a mixture of red fluorescent pigments in an epoxy to produce a manufacturing process. It is an object to provide a semiconductor light emitting device that can be simplified.

상기와 같은 목적을 달성하기 위하여 본 발명에서는 애노드전극 및 캐소드전극으로 이루어지는 단자부; 상기 전극들 중 하나의 전극의 상단에 형성된 반사컵 내에 실장되며, 연결수단을 이용하여 상기 애노드전극 및 상기 캐소드전극에 각각 전기적으로 연결됨과 아울러 청색광과 녹색광을 동시에 발광하는 발광소자칩; 상기 발광소자칩에 의해 여기되어 적색광을 발광시키는 형광체; 및 상기 발광소자칩을 밀봉하여 형성되는 광투과성 수지층을 포함하는 것을 특징으로 하는 반도체 발광장치를 제공한다.In order to achieve the above object, the present invention provides a terminal unit comprising an anode electrode and a cathode electrode; A light emitting device chip mounted in a reflecting cup formed on an upper end of one of the electrodes, the light emitting device chip being electrically connected to the anode electrode and the cathode electrode using a connecting means and simultaneously emitting blue light and green light; Phosphors excited by the light emitting device chip to emit red light; And a light transmissive resin layer formed by sealing the light emitting device chip.

여기서, 상기 형광체는 상기 광투과성 수지층에 분말 형태로 혼합되어 있으며, 상기 형광체는 적색 형광안료인 Y2O2S:EU을 사용하는 것이 바람직하다.Here, the phosphor is mixed in the form of a powder in the light-transmissive resin layer, the phosphor is preferably used a red fluorescent pigment Y2O2S: EU.

이와 같은 본 발명은 상기 발광소자칩에서 발광된 청색광과 녹색광 및 상기 발광소자칩에 의해 상기 형광체가 여기되어 발광되는 적색광의 조합으로 백색광이 얻어지는 것이다.In the present invention as described above, white light is obtained by a combination of blue light, green light emitted from the light emitting device chip, and red light emitted by excitation of the phosphor by the light emitting device chip.

이하, 상기한 바와 같은 본 발명의 바람직한 실시예를 첨부도면을 참고하여 상세히 설명하면 다음과 같다.Hereinafter, with reference to the accompanying drawings, preferred embodiments of the present invention as described above in detail as follows.

도 2는 본 발명의 반도체 발광장치를 도시한 단면도로서, 도 2를 참조하면, 본 발명의 바람직한 일실시예에 따른 발광다이오드 패키지는 애노드전극(11) 및 캐소드전극(12)으로 이루어지는 리드프레임이 마련되고, 상기 캐소드전극(12)의 상단에 형성된 반사컵(13) 내에 발광다이오드칩(15)이 실장된다. 여기서, 상기 발광다이오드칩(15)은 청색광과 녹색광을 발광시키는 발광소자이다. FIG. 2 is a cross-sectional view illustrating a semiconductor light emitting device of the present invention. Referring to FIG. 2, a light emitting diode package according to an exemplary embodiment of the present invention may include a lead frame including an anode electrode 11 and a cathode electrode 12. The light emitting diode chip 15 is mounted in the reflective cup 13 formed on the upper end of the cathode electrode 12. Here, the light emitting diode chip 15 is a light emitting device for emitting blue light and green light.

이때, 상기 반사컵(13)은 상기 발광다이오드칩(15)으로부터 발광된 광이 반사되어 전면으로 출력되도록 유도하여 발광효율이 향상되도록 하는 것으로서, 상기 캐소드전극(12)의 상단에 일정정도 내부로 함몰되는 형태로 형성된다. 이와 같이 함몰된 반사컵(13) 내에 상기 발광다이오드칩(15)이 실장되게 된다.At this time, the reflective cup 13 is to induce light emitted from the light emitting diode chip 15 to be output to the front to improve the luminous efficiency, and to the inside of the upper portion of the cathode electrode 12 to a certain degree. It is formed in a recessed shape. The light emitting diode chip 15 is mounted in the recessed reflection cup 13.

상기 리드 프레임, 즉 애노드전극(11) 및 캐소드전극(12)과 상기 발광다이오드칩(15)은 와이어(16) 본딩을 통해 상기 각 전극(11, 12)과 상기 발광다이오드칩(15) 사이의 전기적으로 접속되게 된다.The lead frame, i.e., the anode electrode 11 and the cathode electrode 12, and the light emitting diode chip 15 are connected between the electrodes 11 and 12 and the light emitting diode chip 15 through a wire 16 bonding. Electrical connection.

상기 발광다이오드칩(15)은 광투과성이 좋은 에폭시 수지(17)로 봉지된다.The light emitting diode chip 15 is encapsulated with an epoxy resin 17 having good light transmittance.

이때, 상기 에폭시 수지(17)에는 분말 형태의 형광체(18)가 혼합된다. 여기서, 상기 형광체(18)는 상기 발광다이오드칩(15)에 의해 여기되어 적색광을 발광시키는 형광물질로 이루어진다. At this time, the phosphor 18 in powder form is mixed with the epoxy resin 17. The phosphor 18 is made of a phosphor that is excited by the light emitting diode chip 15 to emit red light.

이를 위해 상기 형광체(18)는 적색 형광안료인 Y2O2S:EU을 사용하는 것이 바람직하며, 상기 Y2O2S:EU로 인해 상기 청색광 및 녹색광이 발광되는 발광다이오드칩(15)에 의해 여기되어 적색광을 발광시킬 수 있는 것이다.To this end, the phosphor 18 may preferably use Y2O2S: EU, which is a red fluorescent pigment, and may be excited by the LED chip 15 emitting blue and green light due to the Y2O2S: EU to emit red light. It is.

한편, 도 2에서는 상기 형광체(18)가 상기 에폭시 수지(17)에 분말 형태로 혼합된 것으로 도시되었지만, 상기 형광체(18)는 분말 형태가 아닌 판 형태로 이루어져 상기 발광다이오드칩(15)으로부터 일정 거리 이격된 위치에 구비될 수도 있다.On the other hand, although the phosphor 18 is shown as being mixed in the form of a powder in the epoxy resin 17 in FIG. 2, the phosphor 18 is formed in a plate form, not in powder form, and is fixed from the light emitting diode chip 15. It may be provided at a position spaced apart.

그러므로, 상기 발광다이오드칩(15)의 적어도 하나 이상의 색광에 의해 형광체(18)를 여기시켜 발광되는 적색광에 조합으로 백색광이 얻어질 수 있다.Therefore, white light can be obtained in combination with the red light emitted by exciting the phosphor 18 by at least one or more color light of the light emitting diode chip 15.

앞서 언급한 바와 같이, 종래에는 G, B 발광다이오드칩뿐만 아니라 상기 G, B 발광다이오드칩과 상이한 물질로 이루어지는 R 발광다이오드칩이 더 사용됨에 따라 이러한 적색 발광다이오드칩을 구동시키기 위한 별도의 회로 구성이 필요하게 되었고, 패키지에 청색광을 발광시키는 발광소자와 녹색광을 발광시키는 발광소자를 각각 설치하는 경우, 2종류의 칩을 사용하여야 하므로 백색 구현 시 제조공정이 복잡해지는 문제점이 있었다. As mentioned above, in the related art, a separate circuit configuration for driving such a red light emitting diode chip is further used as the G, B light emitting diode chip as well as an R light emitting diode chip made of a different material from the G and B light emitting diode chip is used. When the light emitting device for emitting blue light and the light emitting device for emitting green light are respectively installed in the package, two kinds of chips must be used.

하지만, 본 발명은 청색광과 녹색광을 발광하는 하나의 발광다이오드칩(15)에 적색 형광안료를 혼합한 에폭시 수지를 사용함으로써, 간단한 방법으로도 백 색(White) LED를 구현할수 있는 방법이다.However, the present invention is a method of implementing a white LED by a simple method by using an epoxy resin mixed with a red fluorescent pigment in one light emitting diode chip 15 for emitting blue light and green light.

본 발명의 실시에 있어서, 상기 블루그린칩은 질화물 반도체 발광소자를 이용하여 제조할 수 있으며, 상기 블루그린 파장을 발생시키는 질화물 반도체 소자는 기판 상에 순차적으로 n형 접촉층, n형 클래드층, InGaN 활성층, p형 클래드층 및 접촉층이 적층되어 형성되며, 활성층의 In 조성을 국소적으로 변화시켜 블루파장과 그린파장의 파형을 동시에 발산시킬 수 있다. 활성층에서 In 조성의 국소적 변화는 예를 들어 n형 클래드층의 상층부에 다양한 형태의 스크러치, 예를 들어 V 자형태의 홈과 같은 다양한 형태의 홈을 형성한 후 활성층을 형성함으로서 유도할 수 있다. In the practice of the present invention, the blue green chip may be manufactured using a nitride semiconductor light emitting device, the nitride semiconductor device generating the blue green wavelength is sequentially n-type contact layer, n-type cladding layer, The InGaN active layer, the p-type cladding layer, and the contact layer are formed by laminating, and the In composition of the active layer can be locally changed to simultaneously dissipate the waveforms of blue and green wavelengths. Local changes in the In composition in the active layer can be induced by forming various types of grooves such as, for example, V-shaped grooves on top of the n-type cladding layer and then forming the active layer. have.

이와 같은 본 발명을 통해 제조기술이 간단해 지는 장점을 있다.Through the present invention as described above has the advantage of simplifying the manufacturing technology.

또한, 종래의 기술은 녹색 형광안료(ZnS:Cu.Au.Al)와 적색 형광안료( Y2O2S:Eu)를 사용하여 각각의 비율을 맞추어 사용하여야 하지만, 본 발명은 적색 형광안료(Y2O2S:EU)의 비율 만으로도 백색광을 구현할 수 있는 것이다.In addition, the prior art should be used to match each ratio using a green fluorescent pigment (ZnS: Cu.Au.Al) and a red fluorescent pigment (Y2O2S: Eu), the present invention is a red fluorescent pigment (Y2O2S: EU) It is possible to implement white light only by the ratio of.

이와 같은 본 발명은 청색광과 녹색광을 발광하는 하나의 발광다이오드칩(15)만을 사용하여 와이어 본딩 작업을 한 후, 적색 형광안료인 Y2O2S:Eu을 에폭시와 혼합하여, 이 형광체가 혼합된 에폭시로 몰드 고형화 작업(Oven Baking 또는 UV Curing)을 수행함으로 완성된다.In the present invention as described above, after wire bonding using only one light emitting diode chip 15 emitting blue light and green light, Y2O2S: Eu, which is a red fluorescent pigment, is mixed with epoxy, and the phosphor is mixed with epoxy. Complete by solidifying (Oven Baking or UV Curing).

이와 같은 본 발명은 청색광을 발광하는 동시에 녹색광을 발광하는 발광소자칩을 한 개만 사용하고, 에폭시에 적색 형광안료를 혼합하여 사용함으로써, 제조공 정을 단순화할 수 있는 효과가 있다.As such, the present invention uses only one light emitting device chip that emits blue light and emits green light, and the red fluorescent pigment is mixed with epoxy to simplify the manufacturing process.

Claims (4)

애노드전극 및 캐소드전극으로 이루어지는 단자부;A terminal portion comprising an anode electrode and a cathode electrode; 상기 전극들 중 하나의 전극의 상단에 형성된 반사컵 내에 실장되며, 연결수단을 이용하여 상기 애노드전극 및 상기 캐소드전극에 각각 전기적으로 연결됨과 아울러 청색광과 녹색광을 동시에 발광하는 발광소자칩;A light emitting device chip mounted in a reflecting cup formed on an upper end of one of the electrodes, the light emitting device chip being electrically connected to the anode electrode and the cathode electrode using a connecting means and simultaneously emitting blue light and green light; 상기 발광소자칩에 의해 여기되어 적색광을 발광시키는 형광체; 및Phosphors excited by the light emitting device chip to emit red light; And 상기 발광소자칩을 밀봉하여 형성되는 광투과성 수지층을 포함하는 것을 특징으로 하는 반도체 발광장치.And a light transmitting resin layer formed by sealing the light emitting device chip. 제1항에 있어서, The method of claim 1, 상기 형광체는 상기 광투과성 수지층에 분말 형태로 혼합되어 있는 것을 특징으로 하는 반도체 발광장치.The phosphor is a semiconductor light emitting device, characterized in that in the form of a powder mixed with the light transmitting resin layer. 제1항에 있어서, The method of claim 1, 상기 형광체는 적색 형광안료인 Y2O2S:EU을 사용하는 것을 특징으로 하는 반도체 발광장치.The phosphor is a semiconductor light emitting device, characterized in that using a red fluorescent pigment Y2O2S: EU. 제1항에 있어서, The method of claim 1, 상기 발광소자칩에서 발광된 청색광과 녹색광 및 상기 발광소자칩에 의해 상 기 형광체가 여기되어 발광되는 적색광의 조합으로 백색광이 얻어지는 것을 특징으로 하는 반도체 발광장치.And white light is obtained by a combination of blue light and green light emitted from the light emitting device chip, and red light emitted by the phosphor by the light emitting device chip.
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