KR20130020969A - Apparatus for forming cigs layer - Google Patents

Apparatus for forming cigs layer Download PDF

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KR20130020969A
KR20130020969A KR1020110083193A KR20110083193A KR20130020969A KR 20130020969 A KR20130020969 A KR 20130020969A KR 1020110083193 A KR1020110083193 A KR 1020110083193A KR 20110083193 A KR20110083193 A KR 20110083193A KR 20130020969 A KR20130020969 A KR 20130020969A
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wall
door
forming apparatus
cigs layer
layer forming
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KR1020110083193A
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KR101274130B1 (en
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이경호
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주식회사 테라세미콘
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67772—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving removal of lid, door, cover
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

PURPOSE: An apparatus for forming a CIGS(Cu In1-x Gax Se2) layer is provided to prevent the deformation of a chamber by forming an inner wall and a corner which have round edge parts. CONSTITUTION: A wall(110) includes a rectangular inner wall(111) and an outer wall. A gateway is formed in the lower side of the inner wall. The outer wall covers the upper and side parts of the inner wall. A door(121) opens the gateway. The edges of the upper and side parts are rounded.

Description

ＣＩＧＳ층 형성장치 {APPARATUS FOR FORMING CIGS LAYER}CIS layer forming apparatus {APPARATUS FOR FORMING CIGS LAYER}

본 발명은 박막형 태양전지의 CIGS층 형성장치에 관한 것이다.The present invention relates to a CIGS layer forming apparatus of a thin film solar cell.

오늘날, 고갈되어 가는 화석 연료에 대한 의존도를 줄이기 위해, 고갈될 염려가 없을 뿐만 아니라 친환경적인 태양에너지를 활용하는 태양전지(Solar Cell)에 대한 연구 개발이 활발히 진행 중이다.Today, in order to reduce the dependence on depleted fossil fuels, research and development on active solar cells that utilize not only the risk of depletion but also use environmentally friendly solar energy are in progress.

이러한 연구 개발의 일환으로, 태양광의 흡수율이 높고, 태양광 또는 방사선에 대한 열화 현상이 적으며, 박막화가 가능하고, 제작상 재료비를 절감할 수 있는 CIGS{Cu(In1-xGax)Se2} 층이 형성된 박막형 태양전지가 개발되었다.As part of this research and development, CIGS {Cu (In1-xGax) Se 2 } layer which has high absorption rate of solar light, little degradation of sunlight or radiation, thin film and low material cost. The formed thin film solar cell has been developed.

박막형 태양전지는 유리 등의 기판, 기판 상에 형성된 금속층으로 이루어진 (+)극인 전극층, 전극층 상에 형성되며 광을 흡수하는 p형의 CIGS층, CIGS층 상에 형성된 n형의 버퍼층 및 버퍼층 상에 형성된 (-)극인 투명 전극층을 포함하는 다층 적층 구조이다.Thin-film solar cells include a substrate such as glass, an electrode layer which is a positive electrode made of a metal layer formed on the substrate, a p-type CIGS layer formed on the electrode layer to absorb light, an n-type buffer layer and a buffer layer formed on the CIGS layer. It is a multilayer laminated structure containing the transparent electrode layer which is the formed (-) pole.

그리하여, 수광부인 투명 전극층을 통하여 태양광이 입사되면, p-n 접합 부근에서는 대략 1.04 eV 의 밴드갭 에너지를 갖는 여기된 한 쌍의 전자 및 정공이 생성된다. 그리고, 여기된 전자와 정공은 확산에 의해 p-n 접합부에 도달하고, 접합부의 내부 전계에 의해 전자가 n 영역에, 정공이 p 영역에 집합하여 분리된다.Thus, when sunlight enters through the transparent electrode layer serving as the light receiving portion, a pair of excited electrons and holes having a bandgap energy of approximately 1.04 eV are generated near the p-n junction. The excited electrons and holes reach the p-n junction by diffusion, and electrons are collected in the n region and holes are separated in the p region by the internal electric field of the junction.

그러면, n 영역은 마이너스로 대전되고, p 영역은 플러스로 대전되며, 각 영역에 형성된 전극 간에는 전위차가 생긴다. 그리고, 전위차를 기전력으로 하여 각 전극 사이를 도선으로 연결하면 광전류가 얻어진다. 이것이 태양전지의 원리이다.Then, the n region is negatively charged, the p region is positively charged, and a potential difference occurs between the electrodes formed in each region. A photocurrent is obtained when the potential difference is used as an electromotive force and the respective electrodes are connected by a lead wire. This is the principle of solar cells.

박막형 태양전지의 CIGS층을 형성하는 방법은, 기판에 형성된 전극층 상에 Cu/Ga, Cu/In 또는 Cu-Ga/In 중의 어느 하나로 이루어진 전구물질(前購物質, Precursor)을 형성하고, 전구물질을 스퍼터링 등의 방법으로 적층 구조의 전구체막으로 형성한 다음, 전구체막을 셀렌화(Selenization)하여 CIGS층을 형성한다.In the method for forming the CIGS layer of the thin-film solar cell, a precursor made of any one of Cu / Ga, Cu / In, or Cu-Ga / In is formed on an electrode layer formed on a substrate, and the precursor is formed. Is formed into a precursor film having a laminated structure by sputtering or the like, and then the precursor film is selenized to form a CIGS layer.

그리고, 전구체막을 셀렌화하는 방법은 전구체막이 형성된 기판을 밀폐된 챔버에 로딩시키고, 챔버를 불활성가스로 치환한 다음, 챔버에 처리가스인 셀렌화 수소(H2Se)을 도입한 후, 챔버를 일정 온도로 승온시켜 일정 시간 유지하면, 셀렌화된 CIGS층이 형성된다.In the method of selenizing the precursor film, the substrate on which the precursor film is formed is loaded into a closed chamber, the chamber is replaced with an inert gas, and hydrogen selenide (H 2 Se), which is a processing gas, is introduced into the chamber, and then the chamber is opened. When the temperature is raised to a constant temperature and maintained for a certain time, a selenized CIGS layer is formed.

종래의 CIGS층 형성장치는 챔버를 형성하는 벽체가 원형으로 형성된다. 원형 구조의 벽체는 안정성에 있어서는 우수하나, 챔버로 로딩되는 기판이 사각 형상일 경우, 사장되는 불필요한 공간이 많이 존재한다. 이로 인해, 기판의 크기에 비하여 CIGS층 형성장치의 부피가 커지게 되는 단점이 있었다. 그리고, CIGS층 형성장치의 부피가 커짐으로 인하여, 분위기 가스의 소모량 및 전력의 소모량이 증가하여 원가가 상승하는 단점이 있었다.In the conventional CIGS layer forming apparatus, the wall forming the chamber is formed in a circular shape. Although the wall of circular structure is excellent in stability, when the board | substrate loaded into a chamber is rectangular shape, there exist many unnecessary spaces which remain dead. As a result, the volume of the CIGS layer forming apparatus is increased compared to the size of the substrate. In addition, as the volume of the CIGS layer forming apparatus increases, the consumption of the atmospheric gas and the consumption of power increase, resulting in a cost increase.

상기와 같은 문제점을 해소하기 위하여, 챔버를 형성하는 벽체를 육면체로 형성한 CIGS층 형성장치가 개발되었다. 그러나, 육면체 구조의 벽체는 압력에 대해서는 우수한 내구성이 있으나, 열에 의하여 팽창 또는 수축을 반복하다 보면, 모서리부가 용이하게 손상되는 단점이 있었다.In order to solve the above problems, a CIGS layer forming apparatus has been developed in which a wall forming a chamber is formed of a hexahedron. However, the wall of the hexahedral structure has excellent durability against pressure, but when the expansion or contraction is repeated by heat, the edge portion is easily damaged.

CIGS층 형성장치와 관련된 기술은 한국공개특허공보 10-2007-0097472호 등에 개시되어 있다.The technology related to the CIGS layer forming apparatus is disclosed in Korea Patent Publication No. 10-2007-0097472.

본 발명은 상기와 같은 종래 기술의 문제점을 해소하기 위하여 안출된 것으로, 본 발명의 목적은 사각 구조의 벽체의 모서리부를 라운딩지게 형성하여 열팽창 또는 수축에 대한 내구성을 향상시킬 수 있는 CIGS층 형성장치를 제공함에 있다.The present invention has been made in order to solve the problems of the prior art as described above, an object of the present invention is to form a corner corner of the wall of the rectangular structure to form a CIGS layer forming apparatus that can improve the durability against thermal expansion or contraction In providing.

상기 목적을 달성하기 위한 본 발명에 따른 CIGS층 형성장치는, 복수개의 기판이 상호 간격을 가지면서 상하로 기립된 상태로 로딩되어 처리되는 챔버를 제공하고, 수직으로 기립 설치되며, 하면에는 출입구가 형성된 육면체 형상의 내부벽체, 상기 내부벽체의 상면과 측면을 감싸는 형태로 설치되어 상기 내부벽체의 외면과 간격을 가지고 하면은 상기 내부벽체의 하면과 결합되는 외부벽체를 포함하는 벽체(壁體); 상기 내부벽체의 하면에 승강가능하게 설치되어 상기 출입구를 개폐하는 도어를 포함하며, 상기 내부벽체의 측면 모서리부 및 상면 모서리부는 라운딩진다.The CIGS layer forming apparatus according to the present invention for achieving the above object, provides a chamber in which a plurality of substrates are loaded and processed in a standing state up and down while having a mutual gap, and is vertically installed, the lower surface is an entrance A wall formed to surround the formed hexahedron-shaped inner wall, the upper surface and the side surface of the inner wall, and having an interval with an outer surface of the inner wall, the lower wall including an outer wall coupled to the lower surface of the inner wall; A door configured to be lifted and lowered on the lower surface of the inner wall to open and close the entrance and exit, and the side edge and the upper edge of the inner wall are rounded.

본 발명에 따른 CIGS층 형성장치는, 챔버를 형성하는 내부벽체가 육면체 형상으로 형성되고, 내부벽체의 측면 및 상면의 모서리부는 라운딩지게 형성된다. 그러면, 내부벽체의 모서리부에 작용하는 힘이 부딪혀 상호 상쇄되므로 변형이 방지되는 효과가 있다.In the CIGS layer forming apparatus according to the present invention, the inner wall forming the chamber is formed in a hexahedral shape, and the edges of the side and the upper surface of the inner wall are rounded. Then, the force acting on the corner portion of the inner wall collides with each other, so that the deformation is prevented.

도 1은 본 발명의 일 실시예에 따른 CIGS층 형성장치의 사시도.
도 2는 도 1에 도시된 CIGS층 형성장치의 일부 절개 사시도로서, 도어측이 하강한 상태를 보인 사시도.
도 3은 도 2에 도시된 도어 부위의 확대 사시도.
도 4는 도 3에 도시된 내부벽체의 학대 사시도.
도 5는 도 4의 배면 사시도.1 is a perspective view of a CIGS layer forming apparatus according to an embodiment of the present invention.
Figure 2 is a partially cutaway perspective view of the CIGS layer forming apparatus shown in Figure 1, a perspective view showing the door side is lowered.
3 is an enlarged perspective view of the door part shown in FIG. 2;
4 is a perspective view of the abuse of the inner wall shown in FIG.
5 is a rear perspective view of FIG. 4.

후술하는 본 발명에 대한 상세한 설명은, 본 발명이 실시될 수 있는 특정 실시예를 예시하여 도시한 첨부 도면을 참조한다. 이들 실시예는 당업자가 본 발명을 실시할 수 있도록 충분히 상세하게 설명된다. 본 발명의 다양한 실시예는 상호 다르지만 상호 배타적일 필요는 없음이 이해되어야 한다. 예를 들어, 여기에 기재되어 있는 특정 형상, 특정 구조 및 특성은 일 실시예와 관련하여 본 발명의 정신 및 범위를 벗어나지 않으면서 다른 실시예로 구현될 수 있다. 또한, 각각의 개시된 실시예 내의 개별 구성요소의 위치 또는 배치는 본 발명의 정신 및 범위를 벗어나지 않으면서 변경될 수 있음이 이해되어야 한다. 따라서, 후술하는 상세한 설명은 한정적인 의미가 아니며, 본 발명의 범위는, 적절하게 설명된다면, 그 청구항들이 주장하는 것과 균등한 모든 범위와 더불어 첨부된 청구항에 의해서만 한정된다. 도면에 도시된 실시예들의 길이, 면적, 두께 및 형태는, 편의상, 과장되어 표현될 수도 있다.DETAILED DESCRIPTION OF THE INVENTION The following detailed description of the invention refers to the accompanying drawings that illustrate specific embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. It should be understood that the various embodiments of the present invention are mutually exclusive, but need not be mutually exclusive. For example, certain features, specific structures, and features described herein may be implemented in other embodiments without departing from the spirit and scope of the invention in connection with one embodiment. It is also to be understood that the position or arrangement of the individual components within each disclosed embodiment may be varied without departing from the spirit and scope of the invention. The following detailed description, therefore, is not to be taken in a limiting sense, and the scope of the present invention is defined only by the appended claims, along with the full scope of equivalents to which such claims are entitled. The length, area, thickness, and shape of the embodiments shown in the drawings may be exaggerated for convenience.

이하, 첨부된 도면을 참조하여 본 발명의 일 실시예에 따른 CIGS층 형성장치를 상세히 설명한다.Hereinafter, a CIGS layer forming apparatus according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

도 1은 본 발명의 일 실시예에 따른 CIGS층 형성장치의 사시도이고, 도 2는 도 1에 도시된 CIGS층 형성장치의 일부 절개 사시도로서, 도어측이 하강한 상태를 보인 사시도이며, 도 3은 도 2에 도시된 도어 부위의 확대 사시도이다.1 is a perspective view of a CIGS layer forming apparatus according to an embodiment of the present invention, Figure 2 is a partially cutaway perspective view of the CIGS layer forming apparatus shown in Figure 1, a perspective view showing the door side is lowered, Figure 3 Is an enlarged perspective view of the door part shown in FIG.

도시된 바와 같이, 본 실시예에 따른 CIGS층 형성장치는 유리 등의 기판(50)이 로딩되어 처리되는 밀폐된 챔버(110a)를 제공하는 스테인리스 스틸로 형성된 벽체(壁體)(110)를 포함한다. 벽체(110)는 수직으로 기립 설치되며, 챔버(110a)가 형성된 내부벽체(111)와 내부벽체(111)의 상면과 측면을 감싸는 형태로 설치되며 내부벽체(111)의 외면과 간격을 가지는 외부벽체(117)를 가진다.As shown, the CIGS layer forming apparatus according to the present embodiment includes a wall 110 formed of stainless steel that provides a closed chamber 110a in which a substrate 50 such as glass is loaded and processed. do. The wall 110 is vertically installed and is installed in the form of surrounding the upper and side surfaces of the inner wall 111 and the inner wall 111 in which the chamber 110a is formed, and having an outer surface and an outer surface of the inner wall 111. It has a wall 117.

내부벽체(111)의 하단면(下端面) 및 외부벽체(117)의 하단면(下端面)에는 외측 및 내측으로 각각 돌출되어 상호 밀폐 결합되는 플랜지부(112, 118)가 각각 형성된다. 내부벽체(111)와 외부벽체(117) 사이의 공간에는 질소 가스가 유입될 수 있다. 질소 가스는 챔버(110a)로 유입된 후술할 셀렌화 수소(H2Se)가 내부벽체(111)와 외부벽체(117) 사이로 누설되었을 때, 셀렌화 수소를 희석시킨다.Flange portions 112 and 118 which protrude outwardly and inwardly and are hermetically sealed to each other are formed on the bottom surface of the inner wall 111 and the bottom surface of the outer wall 117, respectively. Nitrogen gas may flow into the space between the inner wall 111 and the outer wall 117. Nitrogen gas dilutes hydrogen selenide when hydrogen selenide (H 2 Se) to be introduced into the chamber 110a leaks between the inner wall 111 and the outer wall 117.

내부벽체(111)의 하면에는 출입구(113)가 형성되고, 출입구(113)에는 도어(121)가 승강가능하게 설치된다. 도어(121)는 내부벽체(111)의 하측에 설치된 실린더 등과 같은 승강수단(미도시)에 의하여 승강하면서 출입구(113)를 개폐하고, 이로 인해 챔버(110a)가 개방 또는 밀폐된다.An entrance 113 is formed on a lower surface of the inner wall 111, and a door 121 is provided at the entrance 113 so as to be elevated. The door 121 opens and closes the doorway 113 while lifting by an elevating means (not shown), such as a cylinder installed on the lower side of the inner wall 111, and thus the chamber 110a is opened or closed.

도어(121)에 의하여 출입구(113)가 완전하게 실링되도록 도어(121)의 테두리부측에는 링 형상을 이루는 안치홈이 형성되고, 상기 안치홈에는 출입구(113)와 인접한 내부벽체(111)의 하면 부위에 밀착되는 실링부재(121a)가 삽입 안치된다.A ring-shaped settling groove is formed at the edge portion of the door 121 so that the doorway 113 is completely sealed by the door 121, and the bottom surface of the inner wall 111 adjacent to the doorway 113 is formed in the settling groove. The sealing member 121a in close contact with the site is inserted and placed.

실링부재(121a)가 내부벽체(111)의 하면에 더욱 밀착되도록 하기 위하여, 도어(121)의 하측에는 지지판(123)이 설치되고, 지지판(123)과 도어(121) 사이에는 스프링 또는 합성수지 등과 같은 탄성부재(125)가 개재된다.In order for the sealing member 121a to be in close contact with the lower surface of the inner wall 111, a support plate 123 is installed below the door 121, and a spring or synthetic resin is provided between the support plate 123 and the door 121. The same elastic member 125 is interposed.

상세히 설명하면, 지지판(123)은 상기 승강수단에 지지되고, 지지판(123)과 도어(121)는 탄성부재(125)를 매개로 상호 연결된다. 그러면, 상기 승강수단에 의하여 지지판(123)이 상승하면, 지지판(123)에 의하여 도어(121)가 상승하고, 도어(121)의 상승에 의하여 도어(121)에 지지된 실링부재(121a)가 내부벽체(111)의 하면에 접촉된다. 그런데, 지지판(123)이 상기 승강수단에 지지되어 고정되어 있으므로, 탄성부재(125)의 탄성력에 의하여, 도어(121)는 내부벽체(111)의 하면측으로 탄성 지지된다. 따라서, 실링부재(121a)가 내부벽체(111)의 하면에 더욱 밀착되는 것이다.In detail, the support plate 123 is supported by the lifting means, and the support plate 123 and the door 121 are connected to each other through the elastic member 125. Then, when the support plate 123 is raised by the lifting means, the door 121 is raised by the support plate 123, and the sealing member 121a supported by the door 121 by the lift of the door 121 is lifted. It comes in contact with the lower surface of the inner wall 111. However, since the support plate 123 is supported and fixed to the lifting means, the door 121 is elastically supported to the lower surface side of the inner wall 111 by the elastic force of the elastic member 125. Therefore, the sealing member 121a is in close contact with the lower surface of the inner wall 111.

도어(121)의 상면에는 단열판(127)이 설치되고, 단열판(127)의 상면에는 상호 결합되어 세트를 이루는 열전달판(131)과 히터(133)가 설치된다. 열전달판(131)은 투명한 재질로 형성되고, 히터(133)는 상호 상이한 직경을 가지는 링 형상으로 형성되어 복수개가 동심을 이루면서 열전달판(131)에 지지 설치된다.The heat insulating plate 127 is installed on the upper surface of the door 121, and the heat transfer plate 131 and the heater 133 which are coupled to each other to form a set are installed on the upper surface of the heat insulating plate 127. The heat transfer plate 131 is formed of a transparent material, and the heater 133 is formed in a ring shape having a different diameter from each other and is supported by the heat transfer plate 131 while forming a plurality of concentric tubes.

열전달판(131)은 히터(133)로부터 복사열을 전달받아 챔버(110a)로 전달함과 동시에 히터(133)에서 발생된 광을 투과시킨다. 따라서, 챔버(110a)의 분위기 가스는 단면적이 넓은 열전달판(131)과 히터(133)에서 조사된 광에 의하여 가열되므로, 신속하게 가열된다.The heat transfer plate 131 receives radiant heat from the heater 133 and transmits the radiant heat to the chamber 110a and simultaneously transmits the light generated by the heater 133. Therefore, the atmosphere gas of the chamber 110a is heated by the light radiated from the heat transfer plate 131 and the heater 133 having a large cross-sectional area, and thus is heated quickly.

세트를 이루는 열전달판(131)과 복수의 히터(133)는 상하로 간격을 가지면서 복수개 설치된다. 그리고, 내부벽체(111)의 내부에도 챔버(110a)의 분위기 가스를 소정 온도로 가열하는 바 형상의 히터(135)가 설치될 수 있다. 단열판(127)은 열전달판(131) 및 히터(133, 135)에 의하여 가열된 챔버(110a)의 분위기 가스의 열이 외부로 방출되는 것을 방지한다.The plurality of heat transfer plates 131 and the plurality of heaters 133 constituting the set are provided with a plurality of spaced intervals vertically. In addition, a bar-shaped heater 135 may be installed inside the inner wall 111 to heat the atmosphere gas of the chamber 110a to a predetermined temperature. The heat insulating plate 127 prevents heat of the atmospheric gas of the chamber 110a heated by the heat transfer plate 131 and the heaters 133 and 135 from being released to the outside.

열전달판(131) 및 히터(133)는 챔버(110a)와 수평을 이루면서 설치되고, 히터(135)는 챔버(110a)와 수직을 이루면서 설치된다.The heat transfer plate 131 and the heater 133 are installed to be horizontal with the chamber 110a, and the heater 135 is installed while being perpendicular to the chamber 110a.

내부벽체(111)와 외부벽체(117)의 사이에도 히터(137)가 설치된다. 히터(137)는 내부벽체(111)의 외면을 소정 온도로 가열하여 내부벽체(111)의 내면과 외면이 상이하게 열팽창되어 변형되는 것을 방지한다.A heater 137 is also provided between the inner wall 111 and the outer wall 117. The heater 137 heats the outer surface of the inner wall 111 to a predetermined temperature to prevent the inner surface and the outer surface of the inner wall 111 from being thermally expanded and deformed differently.

기판(50)은 상하로 기립된 형태로 복수개가 상호 간격을 가지면서 보트(140)에 지지되어 챔버(110a)에 로딩되어 처리되며, 보트(140)의 상하면은 개방된다.The substrate 50 is supported by the boat 140 while being spaced apart from each other in the form of standing up and down, loaded and processed in the chamber 110a, and the upper and lower surfaces of the boat 140 are opened.

지지판(123), 도어(121), 단열판(127), 열전달판(131), 히터(133) 및 보트(140)는 함께 승강한다.The support plate 123, the door 121, the heat insulation plate 127, the heat transfer plate 131, the heater 133, and the boat 140 are elevated together.

전극층과 Cu/Ga, Cu/In 또는 Cu-Ga/In 중의 어느 하나로 이루어진 전구물질(前購物質, Precursor)에 의한 전구체막이 형성된 기판(50)을 보트(140)에 지지시킨 다음, 보트(140)를 열전달판(131)의 상측에 탑재 지지시킨다. 그 후, 지지판(123)을 상승시키면, 보트(140)가 챔버(110a)에 위치되고, 챔버(110a)는 밀폐된다. 이러한 상태에서, 챔버(110a)에 질소 가스를 유입한 다음, 셀렌화 가스((H2Se)를 주입하여 소정 온도에서 CIGS층을 형성하고, CIGS층 형성한 다음에는 또 다른 소정 온도에서 황화 가스(H2S)를 주입하여 기판(50)의 CIGS층을 처리한다.The boat 140 supports the substrate 50 on which the precursor layer formed of a precursor layer made of an electrode layer and any one of Cu / Ga, Cu / In, or Cu-Ga / In is formed on the boat 140, and then the boat 140 ) Is mounted and supported above the heat transfer plate 131. Then, when the support plate 123 is raised, the boat 140 is located in the chamber 110a and the chamber 110a is closed. In this state, nitrogen gas is introduced into the chamber 110a, followed by injection of selenide gas ((H 2 Se) to form a CIGS layer at a predetermined temperature, and after the CIGS layer is formed, a sulfide gas at another predetermined temperature. (H 2 S) is injected to treat the CIGS layer of the substrate 50.

CIGS층을 형성할 때, 챔버(110a)의 분위기 가스를 하측에서 상측으로 강제로 순환시키기 위한 팬(151)이 도어(121)측에 설치되어 도어(121)와 함께 승강한다. 팬(151)은 시로코 팬(Siroco Fan)으로 마련되며, 기판(50)들의 하부측이 위치된 보트(140)의 직하방에 위치되어 챔버(110a)의 분위기 가스를 기판(50)들의 하부측과 대향하는 중앙부측으로 흡입한 다음 외측으로 배출시켜 순환시킨다.When forming the CIGS layer, a fan 151 for forcibly circulating the atmosphere gas of the chamber 110a from the lower side to the upper side is provided on the door 121 side to move up and down together with the door 121. The fan 151 is provided as a Siroco fan, and the lower side of the substrates 50 is positioned directly below the boat 140 in which the atmosphere gas of the chamber 110a is lowered of the substrates 50. Suction to the central side opposite to and discharge to the outside to circulate.

보트(140)와 팬(151) 사이에는 확산판(155)이 위치되고, 확산판(155)은 도어(121)측에 지지되어 도어(121)와 함께 승강한다. 확산판(155)는 챔버(110a)의 분위기 가스를 기판(50)이 지지된 보트(140)의 내부로 집중시켜 확산시킨다.A diffusion plate 155 is positioned between the boat 140 and the fan 151, and the diffusion plate 155 is supported on the door 121 side to move up and down with the door 121. The diffusion plate 155 concentrates and diffuses the atmospheric gas of the chamber 110a into the boat 140 on which the substrate 50 is supported.

챔버(110a)를 형성하는 내부벽체(111)는 고온의 챔버(110a)의 분위기 가스에 의하여 팽창과 수축을 반복한다. 그러면, 내부벽체(111)가 손상될 수 있다.The inner wall 111 forming the chamber 110a repeats expansion and contraction by the atmospheric gas of the high temperature chamber 110a. Then, the inner wall 111 may be damaged.

본 실시예에 따른 CIGS층 형성장치는 내부벽체(111)가 열에 의한 팽창 또는 수축에 의하여 손상되는 것을 방지할 수 있도록 구성되는데, 이를 도 4 및 도 5를 참조하여 설명한다. 도 4는 도 3에 도시된 내부벽체의 학대 사시도이고, 도 5는 도 4의 배면 사시도이다.The CIGS layer forming apparatus according to the present embodiment is configured to prevent the inner wall 111 from being damaged by expansion or contraction by heat, which will be described with reference to FIGS. 4 and 5. FIG. 4 is an abuse perspective view of the inner wall shown in FIG. 3, and FIG. 5 is a rear perspective view of FIG. 4.

도시된 바와 같이, 내부벽체(111)는 육면체 형상으로 형성되어, 수직으로 기립 설치된다. 이때, 내부벽체(111)의 측면 모서리부 및 상면 모서리부는 라운딩지게 형성된다. 그러면, 내부벽체(111)의 각각의 상기 라운딩진 모서리부의 중심을 기준으로 양측에서 각각 작용하는 힘은 직각이 아니라 둔각을 이룬다. 이로 인해, 내부벽체(111)의 상기 라운딩진 모서리부에 작용하는 힘은 상호 부딪혀 상쇄되므로 변형이 방지되는 것이다.As shown, the inner wall 111 is formed in a hexahedral shape, and is vertically installed. At this time, the side edge portion and the upper edge portion of the inner wall 111 is formed to be rounded. Then, the forces acting on both sides with respect to the center of each of the rounded corners of the inner wall 111 form an obtuse angle rather than a right angle. For this reason, the forces acting on the rounded corners of the inner wall 111 are offset against each other to prevent deformation.

내부벽체(111)의 측면의 라운딩진 모서리부 및 상면의 라운딩진 모서리부가 변형되는 것을 더욱 방지하기 위하여 내부벽체(111)의 측면과 상면에는 보강리브(114)가 결합된다. 이때, 보강리브(114)는 내부벽체(111)에 대하여 수평방향 및 수직방향으로 각각 복수개 결합된다.Reinforcing ribs 114 are coupled to side and top surfaces of the inner wall 111 to further prevent the rounded corners of the inner wall 111 and the rounded corners of the upper surface from being deformed. At this time, a plurality of reinforcing ribs 114 are coupled to the inner wall 111 in a horizontal direction and a vertical direction, respectively.

그리고, 내부벽체(111)의 하단면과 내부벽체(111)의 플랜지부(112)가 만나는 모서리부에는 보강레일(115)이 일체로 형성된다. 보강레일(115)은 내부벽체(111)의 하단면과 플랜지부(112)가 만나는 모서리부가 변형되는 것을 방지한다.The reinforcing rail 115 is integrally formed at the corner portion where the lower end surface of the inner wall 111 and the flange portion 112 of the inner wall 111 meet. The reinforcing rail 115 prevents deformation of the corner portion where the bottom surface of the inner wall 111 and the flange portion 112 meet.

내부벽체(111)의 플랜지부(112)에는 링 형상을 이루는 지지홈(112a)이 형성되고, 지지홈(112a)에는 실링부재(112b)가 삽입 지지된다. 실링부재(112b)는 외부벽체(117)의 플랜지부(118)(도 2 참조)와 접촉하여 내부벽체(111)와 외부벽체(117) 사이의 공간을 실링한다.The flange 112 of the inner wall 111 is formed with a support groove 112a having a ring shape, and the sealing member 112b is inserted and supported in the support groove 112a. The sealing member 112b contacts the flange portion 118 (see FIG. 2) of the outer wall 117 to seal the space between the inner wall 111 and the outer wall 117.

도 4의 미설명부호 127은 단열판이다.Reference numeral 127 in FIG. 4 is a heat insulating plate.

본 발명은 상술한 바와 같이 바람직한 실시예를 예로 들어 도시하여 설명하였으나, 상기 실시예에 한정되지 아니하며 본 발명의 정신을 벗어나지 않는 범위 내에서 당해 발명이 속하는 기술분야에서 통상의 지식을 가진 자에 의해 다양한 변형과 변경이 가능하다. 그러한 변형예 및 변경예는 본 발명과 첨부된 특허청구범위의 범위 내에 속하는 것으로 보아야 한다.Although the present invention has been described with reference to preferred embodiments as described above by way of example, it is not limited to the above embodiments and should be made by those skilled in the art without departing from the spirit of the present invention. Many variations and modifications are possible. Such modifications and variations are intended to fall within the scope of the invention and the appended claims.

110: 벽체
111: 내부벽체
114: 보강리브
115: 보강레일
117: 외부벽체110: wall
111: interior walls
114: reinforcement rib
115: reinforcement rail
117: exterior walls

Claims (10)

복수개의 기판이 상호 간격을 가지면서 상하로 기립된 상태로 로딩되어 처리되는 챔버를 제공하고, 수직으로 기립 설치되며, 하면에는 출입구가 형성된 육면체 형상의 내부벽체, 상기 내부벽체의 상면과 측면을 감싸는 형태로 설치되어 상기 내부벽체의 외면과 간격을 가지고 하면은 상기 내부벽체의 하면과 결합되는 외부벽체를 포함하는 벽체(壁體);
상기 내부벽체의 하면에 승강가능하게 설치되어 상기 출입구를 개폐하는 도어를 포함하며,
상기 내부벽체의 측면 모서리부 및 상면 모서리부는 라운딩진 것을 특징으로 하는 CIGS층 형성장치.A plurality of substrates are provided with a chamber in which the plurality of substrates are loaded and processed in an upright position while being spaced apart from each other. A wall having a shape and having a gap with an outer surface of the inner wall, the lower surface including an outer wall coupled to the lower surface of the inner wall;
A door configured to be elevated on a lower surface of the inner wall to open and close the door;
CIGS layer forming apparatus, characterized in that the side edge portion and the upper edge portion of the inner wall rounded. 제1항에 있어서,
상기 내부벽체의 측면 및 상면에는 보강리브가 결합된 것을 특징으로 하는 CIGS층 형성장치.The method of claim 1,
CIGS layer forming apparatus, characterized in that the reinforcing rib is coupled to the side and the top surface of the inner wall. 제2항에 있어서,
상기 보강리브는 상기 내부벽체에 대하여 수평방향 및 수직방향으로 각각 복수개 설치된 것을 특징으로 하는 CIGS층 형성장치.The method of claim 2,
And a plurality of reinforcing ribs are provided in a horizontal direction and a vertical direction with respect to the inner wall. 제3항에 있어서,
상기 내부벽체의 하단면(下端面) 및 상기 외부벽체의 하단면(下端面)에는 상호 밀폐 결합되는 플랜지부가 각각 형성된 것을 특징으로 하는 CIGS층 형성장치.The method of claim 3,
CIGS layer forming apparatus, characterized in that the lower end of the inner wall and the lower end of the outer wall is formed with flanges which are hermetically coupled to each other. 제4항에 있어서,
상기 내부벽체의 하단면과 상기 내부벽체의 플랜지부가 만나는 모서리부에는 보강레일이 일체로 형성된 것을 특징으로 하는 CIGS층 형성장치.5. The method of claim 4,
CIGS layer forming apparatus, characterized in that the reinforcing rail is integrally formed in the corner portion where the bottom surface of the inner wall and the flange portion of the inner wall meets. 제5항에 있어서,
상기 내부벽체의 내부 측면 및 내부 하면에는 단열판이 설치된 것을 특징으로 하는 CIGS층 형성장치.The method of claim 5,
CIGS layer forming apparatus, characterized in that the insulating plate is installed on the inner side and the inner bottom of the inner wall. 제6항에 있어서,
상기 내부벽체의 상기 플랜지부에는 지지홈이 형성되고, 상기 지지홈에는 상기 외부벽체의 상기 플랜지부와 접촉되는 실링부재가 삽입 지지된 것을 특징으로 하는 CIGS층 형성장치.The method according to claim 6,
CIGS layer forming apparatus, characterized in that the support groove is formed in the flange portion of the inner wall, the sealing groove is inserted and supported in contact with the flange portion of the outer wall. 제1항에 있어서,
상기 기판은 상하면이 개방된 보트에 지지되고,
상기 보트는 상기 도어측에 지지되어 상기 도어와 함께 승강하며,
상기 도어측에는 상기 보트의 하측에 위치되어 상기 챔버의 분위기 가스를 중앙부측으로 흡입한 다음 외측으로 배출시켜 상측으로 순환시키는 팬이 설치된 것을 특징으로 하는 CIGS층 형성장치.The method of claim 1,
The substrate is supported by a boat having an open top and bottom,
The boat is supported on the door side to lift with the door,
CIGS layer forming apparatus, characterized in that the fan side is located on the lower side of the boat to suck the atmosphere gas of the chamber toward the center portion and then discharge to the outside to circulate upward. 제8항에 있어서,
상기 보트와 상기 팬 사이에는 상기 도어측에 지지되어 상기 도어와 함께 승강하며, 상기 챔버의 분위기 가스가 상기 보트의 내부로 집중되어 확산되도록 안내하는 확산판이 설치된 것을 특징으로 하는 CIGS층 형성장치.9. The method of claim 8,
And a diffusion plate provided between the boat and the fan and supported by the door to move up and down with the door, and to guide the diffusion of atmospheric gas into the boat. 제9항에 있어서,
상기 도어측에는 상기 팬의 하측에 위치되어 상기 도어와 함께 승강하는 열전달판이 설치되고,
상기 열전달판에는 상호 상이한 직경으로 형성되어 동심을 이루며 상기 챔버에 대하여 수평을 이루는 링 형상의 복수의 히터가 설치되며,
상기 내부벽체에는 상기 챔버와 수직을 이루는 바 형상의 복수의 히터가 설치되고,
상기 도어에는 상기 챔버의 분위기 가스의 열이 방출되는 것을 방지하는 단열판이 설치되며,
상기 내부벽체와 상기 외부벽체 사이에는 히터가 설치된 것을 특징으로 하는 CIGS층 형성장치.10. The method of claim 9,
The door side is provided with a heat transfer plate located on the lower side of the fan to move up and down with the door,
The heat transfer plate is provided with a plurality of heaters in a ring shape which are formed with different diameters to form concentric and horizontal to the chamber,
The inner wall is provided with a plurality of heaters having a bar shape perpendicular to the chamber,
The door is provided with a heat insulation plate to prevent the heat of the atmosphere gas of the chamber is discharged,
CIGS layer forming apparatus, characterized in that the heater is installed between the inner wall and the outer wall.
KR1020110083193A 2011-08-22 2011-08-22 Apparatus for forming cigs layer KR101274130B1 (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016535459A (en) * 2013-09-10 2016-11-10 テラセミコン コーポレイション Heat treatment apparatus and heat treatment system including the same
JP2016538730A (en) * 2013-09-10 2016-12-08 テラセミコン コーポレイション Chamber of heat treatment apparatus and manufacturing method thereof
KR20180086142A (en) * 2017-01-20 2018-07-30 캐논 가부시끼가이샤 Decompression container, processing apparatus, processing system, and method of producing flat panel display

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JP5244170B2 (en) * 2008-04-17 2013-07-24 本田技研工業株式会社 Solar cell heat treatment equipment
JP5730496B2 (en) * 2009-05-01 2015-06-10 株式会社日立国際電気 Heat treatment apparatus, semiconductor device manufacturing method, and substrate processing method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016535459A (en) * 2013-09-10 2016-11-10 テラセミコン コーポレイション Heat treatment apparatus and heat treatment system including the same
JP2016538730A (en) * 2013-09-10 2016-12-08 テラセミコン コーポレイション Chamber of heat treatment apparatus and manufacturing method thereof
KR20180086142A (en) * 2017-01-20 2018-07-30 캐논 가부시끼가이샤 Decompression container, processing apparatus, processing system, and method of producing flat panel display

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