KR20130014950A - Manufacturing method of semiconductor light emitting device - Google Patents

Manufacturing method of semiconductor light emitting device Download PDF

Info

Publication number
KR20130014950A
KR20130014950A KR1020110076721A KR20110076721A KR20130014950A KR 20130014950 A KR20130014950 A KR 20130014950A KR 1020110076721 A KR1020110076721 A KR 1020110076721A KR 20110076721 A KR20110076721 A KR 20110076721A KR 20130014950 A KR20130014950 A KR 20130014950A
Authority
KR
South Korea
Prior art keywords
layer
wavelength conversion
light emitting
emitting device
wafer
Prior art date
Application number
KR1020110076721A
Other languages
Korean (ko)
Inventor
최번재
이상범
김지열
Original Assignee
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to KR1020110076721A priority Critical patent/KR20130014950A/en
Publication of KR20130014950A publication Critical patent/KR20130014950A/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

PURPOSE: A method for manufacturing a semiconductor light emitting device is provided to efficiently reduce the deviation of a chrominance index due to the thickness difference of a wavelength conversion layer by forming at least two wavelength conversion layers with different wavelength conversion material containing conditions. CONSTITUTION: A plurality of electrodes(16) are formed on a semiconductor laminate(15). Structures(17,18) with preset heights are formed on the plurality of electrodes. A wavelength conversion layer(19) is formed on the semiconductor laminate to cover the structure. The wavelength conversion layer includes a first layer(19a) and a second layer(19b). The first layer includes wavelength conversion materials(P) with relatively high density.

Description

Manufacturing Method of Semiconductor Light Emitting Device

The present invention relates to a method for manufacturing a semiconductor light emitting device, and more particularly, to a method for manufacturing a semiconductor light emitting device having a wavelength conversion layer.

In general, a semiconductor light emitting diode (Semiconductor light emitting diode) is a device used to transmit a signal converted from the electrical energy into the infrared, visible light or light by using the characteristics of the compound semiconductor, the current group III-V compound semiconductor Light emitting diodes using are widely commercialized.

Each chip constituting the light emitting device may be formed by growing a semiconductor layer on one wafer and then separating the wafer into chips by a cutting process. A process of forming a wavelength conversion layer including a wavelength conversion material such as phosphor particles and quantum dots is formed on the upper surface of each separated light emitting device.

In this case, in order to perform the process of forming the wavelength conversion layer on the upper surface of the individual devices, a process of aligning each chip is performed separately.

In addition, in order to improve the color coordinate yield, it is necessary to keep the thickness of the wavelength conversion layer constant. However, the wafer is bent due to the difference in thermal expansion coefficient with the epitaxial, and thus, the wafer has a predetermined curvature on the surface to which the wavelength conversion layer is applied, thus making it difficult to form a wavelength conversion layer having a uniform thickness. . Such nonuniform thickness of the wavelength conversion layer can cause a large variation in the color difference index indicating the difference in color.

This deviation in color difference index may be caused by the epitaxial itself. In other words, even in the epitaxial growth process, the difference in the growth conditions depending on the wafer region causes a difference in the composition or thickness of the active layer, so that the primary wavelength light of each light emitting device region may have a different spectrum according to the position of the wafer. . The color difference index problem may also occur due to the problem of epitaxial itself.

One of the objectives of the present invention is to provide a novel method of manufacturing a semiconductor light emitting device which can form a wavelength conversion layer with a uniform thickness so that the color difference index can be managed in a certain allowable range.

In order to realize the above technical problem, an aspect of the present invention,

Providing a wafer having a semiconductor stack for a plurality of light emitting devices, wherein a plurality of electrodes for the plurality of light emitting devices are positioned on the semiconductor stack; and a structure having a predetermined height on the plurality of electrodes Forming a layer, forming a wavelength conversion layer having at least two layers sequentially stacked on the semiconductor laminate, and polishing the wavelength conversion layer so that the wavelength conversion layer has a desired thickness; And at least two layers formed on the semiconductor laminate and having a wavelength converting material so as to serve as a main wavelength converting portion, and formed on the first layer and serving as a thickness adjusting portion. Provided is a method of manufacturing a light emitting device comprising a second layer having a transmittance with respect to a wavelength of light to be emitted from the first layer.

Preferably, the first layer may be formed to have a height lower than the top of the structure. In this case, in the polishing of the wavelength conversion layer, only a portion corresponding to the second layer may be removed.

In a specific embodiment, the forming of the wavelength conversion layer may be forming the wavelength conversion layer to cover the structure. In this case, the polishing of the wavelength conversion layer may form the wavelength conversion layer to expose the structure.

The polishing of the wavelength conversion layer may include polishing the wavelength conversion layer to have a planarized top surface with an upper surface of the structure.

The first layer may be a light transmissive resin layer containing the wavelength conversion material.

In this case, the second layer may be a light transmissive resin layer containing the wavelength conversion material at a content concentration lower than the wavelength conversion material content concentration of the first layer. The concentration of the wavelength conversion material in the second layer may be less than 30% of the concentration of the wavelength conversion material in the first layer.

Further, the second layer may be a light transmissive resin layer not containing the wavelength conversion material.

The light transmissive resin layer of the second layer may be made of the same material as the light transmissive resin layer of the first layer.

If necessary, the wavelength conversion layer may further include a light scattering powder. In this case, the light scattering powder may be contained in the second layer of the wavelength conversion layer.

In addition, the wavelength conversion layer may include at least one third layer containing an optical material different from the optical material contained in at least one of the first and second layers.

In a particular example, the forming of the wavelength converting layer may include applying a wavelength converting material for correction to at least a portion of the region on the first layer between forming the first layer and forming the second layer. It may include the step.

In this case, the wavelength converting material for correction may have a light emission color different from that of the wavelength converting material contained in the first layer.

Preferably, the wavelength conversion material for correction may be applied to have a height lower than the top of the structure.

In one embodiment, after polishing the wavelength conversion layer, the method may further include removing the structure to expose the electrode.

In this case, the structure may be formed of photoresist. Removing the structure may be a step of peeling the structure by applying a flux to the exposed structure.

In other embodiments, the structure can be a conductive bump. The remaining conductive bumps can be used as contacts in the final product.

Before forming the wavelength conversion layer, the method may further include half dicing a wafer on which the semiconductor stack is formed such that at least the semiconductor stack is separated into individual light emitting device units.

In this case, forming the wavelength converting layer includes forming the wavelength converting layer so that a wavelength converting material is filled in the half diced region, and cutting the wafer includes: And cutting the wafer so that the wavelength conversion layer is maintained in the side region of the light emitting device obtained by Xing.

The wafer is a conductive wafer, and the plurality of electrodes may be formed such that one electrode is positioned in each light emitting device region.

Forming the wavelength conversion layer may include screen printing, spin coating, dispensing, spray coating, tape attaching, electrophoresis, deposition process, It may be performed by at least one of sputtering and compression molding.

According to another aspect of the present invention, there is provided a light transmissive wafer having a semiconductor laminate for a plurality of light emitting devices, applying a light transmissive resin layer to a lower surface of the light transmissive wafer, and having the planarized surface. A method of manufacturing a light emitting device includes polishing a resin layer and forming a wavelength conversion layer containing a wavelength conversion material on the planarized surface.

The wafer is an insulating substrate, and the plurality of electrodes may be formed such that at least two electrodes are positioned in the light emitting device region.

In one aspect of the present invention, by forming the wavelength conversion layer into at least two layers having different wavelength conversion material containing conditions, it is possible to effectively reduce the deviation of the color difference index that may be caused by the thickness variation of the wavelength conversion layer. In particular, in the case where the wafer is thin, the difference in the thickness of the wavelength conversion layer is generated after the polishing process of the wavelength conversion layer. Therefore, the variation of the color variation according to the wafer area is effectively reduced by minimizing the thickness change of the main wavelength conversion part. You can.

In another aspect, the thickness of the wavelength conversion layer can be uniformly ensured by introducing a process for providing a flattening surface to reduce the influence of non-uniform surface conditions such as wafer bending.

1A to 1D are cross-sectional views of processes for describing a method of manufacturing a semiconductor light emitting device according to an embodiment of the present invention.
2A and 2B are sectional views of a subsequent process for explaining a method of manufacturing a semiconductor light emitting device according to one specific example of one embodiment of the present invention.
FIG. 3 is a cross-sectional view showing an example of a light emitting device equipped with the semiconductor light emitting device shown in FIG. 2B.
4 is a cross sectional view of a subsequent step for explaining a method of manufacturing a semiconductor light emitting device according to another specific example of one embodiment of the present invention;
FIG. 5 is a cross-sectional view illustrating an example of a light emitting device having the semiconductor light emitting device manufactured in FIG. 4.
6A to 6E are cross-sectional views of processes for explaining a method of manufacturing a semiconductor light emitting device according to another embodiment (half dicing application example) of the present invention.
7A and 7B are cross-sectional views of a subsequent process for explaining a method of manufacturing a semiconductor light emitting device according to one specific example of another embodiment of the present invention.
8 is a cross sectional view of a subsequent process for explaining a method of manufacturing a semiconductor light emitting device according to another specific example of another embodiment of the present invention;
9 and 10 are plan and side cross-sectional views showing an example of a semiconductor light emitting device that can be employed in the present invention.
Fig. 11 is a side cross-sectional view showing another example of a semiconductor light emitting element employable in the present invention.
12A to 12E are cross-sectional views of processes for describing an example of a method of manufacturing a semiconductor light emitting device as another aspect of the present invention.
13A-13D are process cross-sectional views illustrating the process of color correction that may be employed in certain embodiments of the present invention.
14 is a CIE color coordinate system illustrating the results of measuring whiteness for each LED chip at the wafer level.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1A to 1D are cross-sectional views of processes for describing a method of manufacturing a semiconductor light emitting device according to an embodiment of the present invention.

As shown in FIG. 1A, a wafer 11 on which semiconductor stacks 15 for a plurality of light emitting devices are formed is provided.

The semiconductor laminate 15 may include a first conductive semiconductor layer 15a and a second conductive semiconductor layer 15b and an active layer 15c disposed therebetween. A plurality of electrodes 16 for the plurality of light emitting devices is formed on the semiconductor stack 15.

In the present embodiment, the wafer 11 may be a conductive wafer, and if necessary, the conductive wafer 10 may be used as an electrode on one side. Although one electrode 16 is illustrated in each of the individual light emitting device regions, the present invention is not limited thereto and may be implemented as an electrode structure having a plurality of electrodes or extension electrodes having various shapes.

Specifically, the semiconductor light emitting element employed in the present embodiment may be the light emitting structure shown in Figs.

In general, since the semiconductor laminate 15 and the substrate 11 are made of different materials, stress is generated in the growth process or the cooling process after growth due to the difference in thermal expansion coefficient, as shown in FIG. 1A. As a result, the wafer may be bent in a constant direction. For example, when the substrate 11 is a crystal growth substrate, bending may occur due to a lattice constant and a coefficient of thermal expansion during growth, and the semiconductor laminate 15 may be electrically conductive. Even when transferred to, the warpage state may be maintained, or warpage may still occur due to a constant thermal expansion coefficient difference from the conductive substrate.

Although the warping state shown in FIG. 1A is illustrated in the shape of the semiconductor laminate 15 in the shape of a warp, the warpage phenomenon in the opposite direction depends on the difference in thermal expansion coefficient and ambient temperature conditions of the substrate 11 and the semiconductor laminate 15. May be generated.

As shown in FIG. 1B, structures 17 and 18 having a predetermined height h are formed on the plurality of electrodes 16.

The structures 17 and 18 employed in the present embodiment may be formed of a material capable of maintaining the structure without greatly deforming in the wavelength conversion layer forming and polishing process. The structures 17 and 18 employable in this embodiment can be classified into two types depending on whether they remain in the final product. That is, the structure may be divided into a sacrificial pattern 17 that can be easily removed in a subsequent process (after the polishing process) and a conductive bump 18 made of a conventional bonding metal. This will be described in detail with reference to FIGS. 2 to 6.

Preferably, the height of the structures 17 and 18 may be set in consideration of the desired thickness of the final wavelength converting layer. Specifically, the structures 17 and 18 are preferably formed at a height h sufficient so that the upper end thereof is higher than the top height of the final wavelength conversion layer 19 of FIG. 1D.

In addition, when the structure is to be removed as the sacrificial pattern 17, it is preferable to secure a sufficient bonding area to facilitate the wire connection to the electrode located on the bottom of the removed region. For example, when setting the radius r from one area (eg, the center) of the electrode to the area occupied by the sacrificial pattern 17, the radius is preferably set to at least 20 μm.

As shown in FIG. 1C, the wavelength conversion layer 19 is formed on the semiconductor laminate 15 to cover the structures 17 and 18. That is, as described above, the wavelength conversion layer 19 may be formed to a sufficient thickness t1 to cover the structure 17.

The wavelength conversion layer 19 employed in the present embodiment has a structure having at least first and second layers 19a and 19b. Here, the first layer 19a is formed on the semiconductor laminate 15 and provided as a main wavelength converting portion. That is, it may be formed to include an appropriate wavelength conversion material in consideration of the conversion of the desired wavelength.

In a specific example, the first layer 19a may be a light transmissive resin layer containing the wavelength conversion material P at a relatively high concentration. However, the present invention is not limited thereto, and the first layer 19a may be formed of the wavelength conversion material itself. For example, it may be a phosphor film obtained through a sputtering process using a ceramic phosphor as a target.

On the other hand, the second layer 19b is formed on the first layer 19a to serve as a thickness adjusting portion. The second layer 19b is provided as a thickness adjuster to provide the portion to be removed in a subsequent polishing process rather than for the conversion of the wavelength.

In this aspect, it may be preferable that the second layer 19b has a concentration lower than the concentration of the wavelength conversion material of the first layer 19a. The anticipated thickness variation of the second layer 19b may include a wavelength conversion material at a level that does not significantly affect the degree of wavelength conversion. For example, the concentration of the wavelength conversion material in the second layer may be 30% or less of the concentration of the wavelength conversion material in the first layer 19a.

Preferably, as in the present embodiment, the second layer 19b may be a light transmissive resin layer that does not contain the wavelength conversion material. Therefore, even if thickness deviation occurs after the polishing step, it is possible to hardly affect the color difference.

In the case where both the first and second layers use the light transmissive resin layer, the light transmissive resin layer of the second layer 19b may be made of the same material as the light transmissive resin layers of the first layer 19a. .

The wavelength conversion material P employed in the present embodiment may be a phosphor or a quantum dot or a combination thereof. The wavelength conversion material may include yellow or yellowish orange together with yellow or red and green or red and green so that white light is obtained. The phosphor may be any one of a YAG-based, TAG-based, silicate-based, sulfide-based, or nitride-based nitride. As quantum dots, a nano crystal material exhibiting a quantum confinement effect, and includes Si-based nanocrystals, II-VI compound semiconductor nanocrystals, III-V compound semiconductor nanocrystals, and IV-VI compound semiconductors. It may be a nanocrystal. The resin layer may be at least one of epoxy, silicon, polystyrene, and acrylate.

If necessary, the wavelength conversion layer 19 may further include a light scattering powder such as Al 2 O 3 or TiO 2 . Such light scattering powder may be provided in at least one of the first and second layers 19a, 19b. In a particular example, where the first layer 19a is provided with a phosphor ceramic sheet, the light scattering powder may be provided only for the second layer 19b.

As shown in FIG. 1C, the thickness t1 of the first layer 19a may be set to have a height lower than the upper ends of the structures 17 and 18. In addition, the thickness t2 of the second layer 19b may be set to sufficiently cover the structures 17 and 18.

The wavelength conversion layer 19 employed in the present embodiment is not limited thereto, but the first and second layers 19a and 19b may be sequentially formed in separate processes. Screen printing, spin coating, dispensing, spray coating, tape attaching, electrophoresis, deposition process, sputtering and compression molding It can be formed using a known process.

In this example, the wavelength conversion layer 19 is illustrated as covering the structures 17 and 18, but is not limited thereto. That is, if the wavelength conversion layer 19 is provided with a sufficient thickness, it may also be considered that the structures 17 and 18 are formed in an exposed form.

As shown in FIG. 1D, the wavelength conversion layer 19 is polished to expose the structures 17 and 18.

The wavelength conversion layer 19 is polished to be reduced to a desired thickness by using a predetermined polishing device G. The structures 17 and 18 may be exposed through the surface of the wavelength conversion layer 19 polished through the polishing process. In the preceding process, the first layer 19a is formed to an appropriate thickness so as to have a proper difference from the upper ends of the structures 17 and 18, so that only the portion corresponding to the second layer 19b is removed in the polishing process. Can be.

As such, even though the thickness variation of the wavelength conversion layer 19 is generated by the polishing process, since the uniform thickness is maintained in the main wavelength conversion portion (ie, the first layer), uniform color may be expected in each chip region. have.

As described above, the structure employed in the present embodiment can be largely divided into the sacrificial pattern 17 and the conductive bumps 18, depending on whether handled in a subsequent process.

2 and 3 illustrate a subsequent process of the type employed as the sacrificial pattern.

First, as shown in FIG. 2A, the sacrificial pattern 17 is removed to expose the electrode 16.

In the region O from which the sacrificial pattern is removed, an electrode may be exposed to provide a bonding region. The sacrificial pattern removing process may be performed by decomposing the sacrificial pattern 17 by applying an appropriate solvent or by dissolving the interface. When the sacrificial pattern 17 is a photoresist pattern, the flux may penetrate along the surface of the sacrificial pattern to easily peel off the sacrificial pattern 17, which is a photoresist.

The sacrificial pattern removal process can be maintained almost intact without significantly damaging the polished wavelength conversion layer 19 by selectively reacting only with the material constituting the sacrificial pattern 17.

Subsequently, as shown in FIG. 2B, the wafer 11 on which the semiconductor laminate 15 is formed is cut so that the plurality of light emitting devices 10 are obtained.

The process of separating the wafer 11 on which the semiconductor stack 15 is formed in units of elements is not limited thereto, and may be performed using a known process such as dry etching and mechanical cutting.

Like the process according to the present embodiment, the wavelength conversion layer 19 has a nonuniform thickness distribution along the top surface of the wafer by the polishing process for exposing the sacrificial pattern 17. However, since the part to be polished is limited to the second layer 19b which is the thickness adjusting part, the first layer 19a can maintain a uniform thickness realized at the time of initial formation.

As described above, according to the present embodiment, even when the polishing process for exposing the sacrificial pattern 17 is performed, the first layer 19a as the main wavelength converting portion can maintain a constant thickness regardless of the position of the individual chips on the wafer. The color difference due to the thickness deviation of the wavelength conversion layer 19 may be minimized.

In addition, in this embodiment, since the surface of the deposited electrode is provided as it is without forming a separate conductive bump in the bonding region, as shown in FIG. 2, strong bonding strength can be ensured at the time of wire bonding. FIG. 2 is a cross-sectional view illustrating an example of a light emitting device having the semiconductor light emitting device manufactured in FIG. 1F.

Referring to FIG. 2, a semiconductor light emitting device 10 is shown bonded using a conductive adhesive layer 27 on a circuit board 21 having first and second circuit patterns 26a and 26b. In the semiconductor light emitting device 10, the electrode 16 and the second circuit pattern 26b may be electrically connected through a wire (W).

In this embodiment, since the wire W is not connected to the electrode 16 through a conductive bump (not shown) containing a relatively large number of defects, the wire W is directly connected to the surface of the electrode 16, thereby providing a strong bonding strength. It provides an advantage that can be guaranteed.

The sacrificial pattern 17 that satisfies these conditions may be a photoresist. The photoresist has an advantage of being able to stably maintain the exposed area of the electrode even during the wavelength conversion layer forming process, and to be easily and easily peeled off by an appropriate solvent. In addition, the photoresist also has the advantage that a precise pattern formation process is possible.

Unlike the previous example, the structure may be provided with a conductive bump 19, as shown in FIGS. 4 and 5.

As shown in Fig. 4, the resultant shown in Fig. 1D can be cut into each individual element unit. In the individually cut semiconductor light emitting device 10 ', the conductive bumps 18 are not only exposed by the wavelength conversion layer being removed by the preceding polishing process, but also together with the second layer 19b of the wavelength conversion layer 19. It may be polished to have the same plane as the planarized surface of the second layer 19b.

In this structure, the exposed flat top surface of the conductive bump 18 may be provided as a bonding area for connecting with the circuit pattern 26b of the external circuit board, as shown in FIG.

6A through 6E are cross-sectional views of processes for describing a method of manufacturing a semiconductor light emitting device according to one embodiment of the present invention.

As shown in FIG. 6A, the semiconductor laminate 35 may include a first conductive semiconductor layer 35a and a second conductive semiconductor layer 35b and an active layer 35c disposed therebetween. A plurality of electrodes 36 for the plurality of light emitting devices are formed on the semiconductor stack 35.

As illustrated in FIG. 1A, since the semiconductor stack 35 and the substrate 31 are made of different materials, stress is generated during the growth process or the cooling process after growth due to the difference in thermal expansion coefficient. As shown in FIG. 2, a problem may occur in which the wafer is bent in a constant direction.

As shown in FIG. 6B, the wafer 31 on which the semiconductor stack 35 is formed is half dicing so that at least the semiconductor stack 35 is separated into individual light emitting device units.

Through this process, the side surface of the semiconductor laminate 35 may be exposed through the half diced region HD. As in the present embodiment, a portion of the wafer 31 may be diced to completely expose the side surface of the semiconductor laminate 35.

As shown in FIG. 6C, a structure 37 having a predetermined height h is formed on the plurality of electrodes 36.

The structures 37 and 38 employed in the present embodiment may be formed of a material capable of maintaining the structure without greatly deforming in the wavelength conversion layer forming and polishing process. The structures 37 and 38 employable in the present embodiment have a sacrificial pattern 37 that can be easily removed in a subsequent process (after polishing), depending on whether it remains in the final product, and a conductive bump made of a conventional bonding metal. (38).

Preferably, the heights of the structures 37 and 38 may be set in consideration of the desired thickness of the final wavelength converting layer. Specifically, the structures 37 and 38 may be formed at a sufficient height h so that the height of the upper end thereof is higher than the top height of the final wavelength conversion layer 39.

As shown in FIG. 6D, the wavelength conversion layer 39 is formed on the semiconductor laminate 35 to cover the structures 37 and 38.

The wavelength conversion layer 39 employed in the present embodiment includes a first layer 39a serving as the main wavelength converting portion and a second layer 39b formed on the first layer and serving as the thickness adjusting portion. The wavelength conversion layer 39 may be formed to have a sufficient thickness to cover the structures 37 and 38.

In particular, in the present process, the first layer 39a is filled with a wavelength conversion material in the half dicing region HD. Here, the first layer 39a is formed at least not higher than the top of the structures 37, 38. The second layer 39b is formed on the first layer 39a to cover the structures 37 and 38.

The first layer 39a employed in the present embodiment may be a light transmissive resin layer containing the wavelength conversion material P at a relatively high concentration. However, the present invention is not limited thereto, and the first layer 39a may be formed of the wavelength conversion material itself. For example, it may be a phosphor film obtained through a sputtering process using a ceramic phosphor as a target.

The second layer 39b is formed on the first layer 39a to serve as a thickness adjuster. The second layer 39b may have a concentration lower than the concentration of the wavelength conversion material of the first layer 39a. The anticipated thickness variation of the second layer 39b may include a wavelength converting material at a level that does not significantly affect the degree of wavelength conversion.

The second layer 39b may be a light transmissive resin layer not containing the wavelength conversion material. Therefore, even if thickness deviation occurs after the polishing process, the design can be designed so that the color difference is hardly affected. In the case where both the first and second layers 39a and 39b use a light transmissive resin layer, the light transmissive resin layer of the second layer 39b is the same as the light transmissive resin layer of the first layer 39a. It may be made of a material.

The wavelength conversion layer 39 may be a resin layer containing a phosphor or a quantum dot. The wavelength conversion layer 39 may be formed by screen printing, spin coating, dispensing, spray coating, tape attaching, electrophoresis, deposition process, sputtering, and the like. It can be formed using a variety of known processes, such as compression molding.

As shown in Fig. 6E, the wavelength conversion layer 39 is polished so that the structures 37 and 38 are exposed.

The wavelength conversion layer 39 is polished to be reduced to a desired thickness by using a predetermined polishing device G. The structures 37 and 38 may be exposed through the surface of the wavelength conversion layer 39 polished through the polishing process. In the present step, as described above, although the thickness variation of the wavelength conversion layer 39 is generated by the polishing process, the first layer 39, which is the main wavelength conversion part, maintains a uniform thickness, and thus, in each chip region. You can expect a uniform color.

As described above, the structure employed in the present embodiment can be largely divided into the sacrificial pattern 37 and the conductive bumps 38, depending on whether handled in a subsequent process.

7 and 8 illustrate the subsequent process of the type employed as the sacrificial pattern.

First, as shown in FIG. 7A, the sacrificial pattern 37 is removed to expose the electrode 36.

In the region O from which the sacrificial pattern is removed, an electrode may be exposed to provide a bonding region. The sacrificial pattern removing process may be performed by decomposing the sacrificial pattern 37 by applying an appropriate solvent or by dissolving the interface.

Subsequently, as shown in FIG. 7B, the wafer 31 on which the semiconductor laminate 35 is formed is cut so that the plurality of light emitting devices 30 are obtained.

In the present cutting process, the wavelength conversion layer 38 may be maintained in the side region of the light emitting device 30 obtained by the half dicing. In addition, by appropriately adjusting the cutting width in the device isolation process, the thickness of the wavelength conversion layer, ie, the first layer 39a, located on the side surface may be controlled to a desired thickness range.

In the present embodiment, the wavelength conversion layer 39 can be additionally applied to the side surfaces of the semiconductor laminate 35 except for the wafer 31 to substantially secure the wavelength conversion region. As described above, in the manufacturing process using half dicing, the wafer may be a conductive wafer, and may be advantageously employed in a form in which one electrode is positioned in each light emitting device region.

Further, in the present embodiment, the half dicing process is illustrated as being performed after the wafer 31 is prepared and before the sacrificial pattern 37 is formed, but it is satisfied that the half dicing process is performed before the wavelength conversion layer 39 is formed. . That is, it may be executed after the sacrificial pattern 37 is formed as necessary.

As in the present embodiment, although the wavelength conversion layer 39 has a nonuniform thickness distribution along the top surface of the wafer by the polishing process for exposing the sacrificial pattern 37, the portion to be polished is a second layer which is a thickness adjusting portion. Since it is limited to (39b), the 1st layer 39a can maintain the uniform thickness at the time of initial formation.

As described above, according to the present embodiment, even if the polishing process for exposing the sacrificial pattern 37 is performed, the first layer 39a, which is the main wavelength converting portion, can maintain a constant thickness regardless of the position of the individual chips on the wafer. The color difference due to the thickness variation of the wavelength conversion layer 39 may be minimized.

Unlike the previous example, the structure may be provided with conductive bumps 39, as shown in FIG.

As shown in Fig. 8, the resultant shown in Fig. 6E can be cut into each individual element unit. In the individually cut semiconductor light emitting device 10 ', the conductive bumps 38 are not only exposed by the wavelength conversion layer being removed by the previous polishing process, but also together with the second layer 39b of the wavelength conversion layer 39. It may be polished to have the same plane as the planarized surface of the second layer 39b. In this structure, the exposed flat top surface of the conductive bump 38 may be provided as an outer bonding region.

9 and 10 are a plan view and a side cross-sectional view showing an example of a semiconductor light emitting element that can be employed in the present invention.

As shown in FIG. 9, the semiconductor light emitting device 200 may include a conductive substrate 210, a first electrode layer 220, an insulating layer 230, a second electrode layer 240, and a second conductive semiconductor layer 250b. ), An active layer 250c and a first conductivity type semiconductor layer 250a.

The first electrode layer 220 is not only stacked on the conductive substrate 210, but as shown, a portion of the first electrode layer 220 is formed in the insulating layer 230, the second electrode layer 240, and the second conductive layer. The first conductive semiconductor layer 250a extends through the contact hole 280 penetrating the semiconductor semiconductor layer 250b and the active layer 250c and penetrating a predetermined region of the first conductive semiconductor layer 250a. In contact with the conductive substrate 210 and the first conductivity-type semiconductor layer 250a is provided to be electrically connected.

That is, the first electrode layer 220 electrically connects the conductive substrate 210 and the first conductive semiconductor layer 270, and electrically connects the contact hole 280 to the contact hole 280. ), More precisely, is electrically connected through the contact hole 280 through the contact area 290 where the first electrode layer 220 and the first conductive semiconductor layer 250a contact each other.

On the other hand, the insulating layer 220 to electrically insulate the first electrode layer 220 from other layers except for the conductive substrate 210 and the first conductivity type semiconductor layer 250a on the first electrode layer 220. Is provided. That is, the insulating layer 220 is not only between the first electrode layer 220 and the second electrode layer 240 but also the second electrode layer 240 and the second conductivity type semiconductor exposed by the contact hole 280. It is also provided between the side surfaces of the layer 250b and the active layer 250c and the first electrode layer 220. In addition, the insulating layer 220 may also be insulated from the side surface of the first conductive semiconductor layer 250a through which the contact hole 280 passes.

The second electrode layer 240 is provided on the insulating layer 220. Of course, as described above, the second electrode layer 240 does not exist in predetermined regions through which the contact hole 280 passes. In this case, as shown in the drawing, the second electrode layer 240 includes at least one or more exposed regions, ie, exposed regions 245, in which a part of an interface contacting the second conductive semiconductor layer 250b is exposed. An electrode pad part 247 may be provided on the exposed area 245 to connect an external power source to the second electrode layer 240.

In addition, the semiconductor laminate 250 is not formed on the exposed region 245. In addition, the exposed region 245 is preferably formed at the edge of the semiconductor light emitting device 200 as shown, in order to maximize the light emitting area of the semiconductor light emitting device 200. Meanwhile, the second electrode layer 240 preferably includes one of Ag, Al, and Pt metal, which is electrically connected to the second conductive semiconductor layer 250b. As a layer having a property of minimizing contact resistance of the second conductivity-type semiconductor layer 250b and reflecting the light generated by the active layer 250c to the outside to increase the luminous efficiency. It is because it is preferable to be provided.

The second conductivity type semiconductor layer 250b is provided on the second electrode layer 240, and the active layer 250c is provided on the second conductivity type semiconductor layer 250b, and the first conductivity type semiconductor is provided. The layer 250a is provided on the active layer 250b. In this case, the first conductivity-type semiconductor layer 250a may be an n-type nitride semiconductor, and the second conductivity-type semiconductor layer 250b may be a p-type nitride semiconductor.

Alternatively, unlike the light emitting device shown in FIG. 10, another light emitting device 300 employable in the present invention may expose the first electrode layer connected to the contact hole to the outside.

Referring to FIG. 11, in the light emitting device 300, a second conductive semiconductor layer 350b, an active layer 350c, and a first conductive semiconductor layer 350a are formed on the conductive substrate 310. In this case, the second electrode layer 340 may be disposed between the second conductive semiconductor layer 350b and the conductive substrate 310, and unlike the previous embodiment, the second electrode layer 340 is not necessarily required.

In the present embodiment, the contact hole 380 having the contact region 390 in contact with the first conductivity-type semiconductor layer 350a is connected to the first electrode layer 320, and the first electrode layer 320 is moved to the outside. It is exposed and has an electrical connection 345. The electrode pad part 347 may be formed in the electrical connection part 345. The first electrode layer 320 may be electrically separated from the active layer 350c, the second conductive semiconductor layer 350b, the second electrode layer 340, and the conductive substrate 310 by the insulating layer 330.

In the above embodiment, unlike the contact hole was connected to the conductive substrate, in the present embodiment, the contact hole 380 is electrically separated from the conductive substrate 310 and the first electrode layer 320 connected to the contact hole 380. ) Is exposed to the outside. Accordingly, the conductive substrate 310 is electrically connected to the second conductivity type semiconductor layer 350b to have a different polarity as in the previous embodiment.

Accordingly, such a light emitting device can partially secure the light emitting area by forming a part of the first electrode on the light emitting surface and placing the remaining part under the active layer. Even when the current is applied, the current can be uniformly distributed, thereby alleviating the current concentration phenomenon in the high current operation.

As described above, the light emitting device shown in FIGS. 10 and 11 has first and second main surfaces facing each other, and the first and second conductive semiconductor layers providing the first and second main surfaces, respectively, and between them. A semiconductor laminate having an active layer formed thereon, a contact hole connected to a region of the first conductivity-type semiconductor layer from the second main surface through the active layer, and formed on a second main surface of the semiconductor laminate; It can be described as including a first electrode connected through the contact hole in one region of the conductive semiconductor layer, and a second electrode formed on the second main surface of the semiconductor laminate and connected to the second conductive semiconductor layer. have. Here, one of the first and second electrodes may have a structure that is drawn out in the lateral direction of the semiconductor laminate.

In another aspect of the present invention, it is possible to provide a wavelength conversion layer forming process of forming a flattened top surface by using a polishing process and forming a wavelength conversion portion having a uniform thickness using the flattened top surface. This embodiment can be described as an example applied in the manufacturing process of the flip chip light emitting device with reference to FIGS. 12A to 12G.

As shown in Fig. 12A, a wafer 41 on which semiconductor stacks 45 for a plurality of light emitting elements are formed is provided.

The semiconductor laminate 45 may include a first conductive semiconductor layer 45a and a second conductive semiconductor layer 45c, and an active layer 45b disposed therebetween. The wafer 41 may be an epitaxial growth wafer and may be an insulating substrate as in the present embodiment.

Therefore, the first electrode 46a formed in each region of the individual light emitting device is formed on the exposed first conductive semiconductor layer 45a, and the second electrode 46b is formed on the second conductive semiconductor layer 45b. Is formed.

As in the previous embodiment, since the semiconductor stack 45 and the wafer 41 are made of different materials, stress is generated during the growth process or the cooling process after the growth due to the difference in thermal expansion coefficient, so that the wafer is in a constant direction. This can cause problems with bending.

As shown in FIG. 12B, a light transmissive resin layer 48 is applied to the lower surface of the light transmissive wafer 41.

The light transmissive resin layer 48 has a curved shape corresponding to the degree of warpage of the wafer 41 even when formed to a certain thickness. The light transmissive resin layer employed in the present embodiment is provided to provide a flat top surface rather than being employed as an optical element. Therefore, it is preferable to employ only the light transmissive material itself, but other materials may be contained where the variation in thickness does not disadvantageously, if necessary.

Then, as shown in Fig. 12C, the light transmissive resin layer 48 is polished to have a flattened surface. Through the polishing process, the light transmissive resin layer may have a flattened top surface. As shown in FIG. 12D, the planarized top surface may be used to form the wavelength conversion layer 49a containing the wavelength conversion material with a uniform thickness relatively easily.

Finally, as illustrated in FIG. 12E, the semiconductor light emitting device having the desired flip chip structure may be provided by cutting the individual chip units. If necessary, the method may further include providing a wavelength conversion layer on the side of the device.

In various embodiments of the present disclosure, the method may include forming a separate at least one third layer in the wavelength conversion layer forming step.

If desired, additional third layers may be formed to assume various additional functions. For example, the third layer may be in charge of another emission color as a wavelength conversion part. As such, the third layer may include optical materials (wavelength converting materials, light scattering materials, light transmissive matrix materials, etc.) and other necessary optical materials contained in the first and second layers. On the other hand, the third layer may be used as a layer to protect the main wavelength conversion portion in the polishing process.

Similarly, certain embodiments of the invention include applying a wavelength converting material for correction to at least a portion of the region on the first layer between forming the first layer and forming the second layer. can do. This embodiment has been described with reference to FIGS. 13A-13D.

First, as shown in Fig. 13A, a wafer 51 on which semiconductor laminates 55 for a plurality of LED chips C are formed is provided.

The wafer 51 may be an epitaxial growth substrate or a support substrate having a separate conductivity. The semiconductor laminate 55 includes first and second conductive semiconductor layers and an active layer disposed therebetween. The semiconductor laminate 55 may have a form separated into individual chip units C through isolation etching (I). In the semiconductor laminate 50a of each chip unit C, an electrode 56 is formed. The structure of each chip is not limited thereto, but may be understood as the semiconductor light emitting device shown in FIGS. 9 to 11.

Next, as shown in FIG. 13B, a main wavelength conversion layer 59a for emitting white light is formed on the semiconductor laminate. This process can be understood with reference to the process of forming the first layer of the wavelength conversion layer described in FIGS. 1B and 1C.

The main wavelength conversion layer 59a formed in this process can be formed on the fin surface of the wafer 51 so as to have a substantially uniform thickness over each chip (C). Even if the semiconductor laminate 55 is formed with the main wavelength conversion layer 59a, the electrode 56 of the LED chip C may be provided to be exposed to the external region. As described above, the sacrificial pattern and the conductive bumps may be formed as the structure.

Each chip located on each wafer is then directly measured by measuring the color characteristics of the white light emitted from the LED chip to which the wavelength conversion layer has already been applied, or based on information on the wavelength characteristics of the individual LED chips of the wafer manufactured under the same growth conditions. It can be determined whether they satisfy the desired target color characteristics (eg, color coordinates).

Referring to a specific example, as shown in FIG. 13C, as a result of color coordinate measurement for each individual chip, some chips c located in an area indicated by A, B, C, and D represent the target color coordinate area T. As shown in FIG. It can be understood that the off-color coordinate result is measured. The areas of A, B, C, and D that display chips outside the target color coordinate area are reflected in the color coordinate area indicated by the same letter together with the virtual wafer area WF in FIG.

The color coordinate difference according to the wafer region may be generated by the active layer having a different wavelength due to the difference in process conditions for each wafer region during the epitaxial growth process. Therefore, even when the wavelength conversion layer (first layer 59a) is formed to have a uniform thickness, as shown in FIG. By further applying at least one wavelength converting material as a wavelength converting part for correction, color difference of the final product can be minimized.

The formation process of the correction wavelength conversion portion is preferably performed before forming the thickness adjusting portion, which is the second layer 19b described in FIG. 1C.

First, as shown in FIG. 13C, a wavelength converting material for color correction may be selected and its amount may be determined according to whether the color correction obtained from the result of FIG. 14 is necessary or not. In addition, according to each region shown in FIG. 13C, a color correction process may be applied to chips of a certain region at once, but as shown in FIG. 13D, according to the color deviation of the individual chips C, more precise The wavelength conversion material 58 for correction may be applied.

That is, when it is determined that color correction is necessary, the type and amount of phosphor required for the LED chip C to be color corrected are determined, and an additional wavelength converting material 58 is applied. For example, in the case of the area A, in order to move to the target color coordinate region T, it may be determined in a direction in which the red phosphor R is added. Similarly, in the case of the region C and the region E, the yellow phosphor Y and the green phosphor G may be selected to adjust the target color coordinate region T, respectively.

In addition, the chips located in the B, G, and D regions deviating from the target color coordinate region T may be appropriately combined with other phosphors. On the other hand, the amount of the selected phosphor may be appropriately selected based on the magnitude of the deviation, that is, the difference in the color coordinates.

After the color correction process is completed, the process of forming the light-transmissive resin layer corresponding to the above-described thickness adjusting unit may be performed, and the process of exposing the structure may be performed. This process may refer to the embodiment described above. Specifically, it will be apparent to those skilled in the art that the process of FIG. 2 or FIG. 4 together with FIGS. 1C-1D may advantageously employ the process for the subsequent process of this embodiment.

It is intended that the invention not be limited by the foregoing embodiments and the accompanying drawings, but rather by the claims appended hereto. It will be apparent to those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. something to do.

Claims (27)

Providing a wafer on which semiconductor stacks for a plurality of light emitting devices are formed, wherein a plurality of electrodes for the plurality of light emitting devices are located on the semiconductor stack;
Forming a structure having a predetermined height on the plurality of electrodes;
Forming a wavelength conversion layer having at least two layers sequentially stacked on the semiconductor laminate; And
And polishing the wavelength conversion layer such that the wavelength conversion layer has a desired thickness.
The at least two layers are formed on the semiconductor laminate and have a first layer having a wavelength converting material so as to serve as a main wavelength converting portion, and are formed on the first layer and serve as a thickness adjusting portion to be emitted from the light emitting device. A light emitting device manufacturing method comprising a second layer having a transmittance with respect to the wavelength of light larger than the first layer.
The method of claim 1,
The first layer is a light emitting device manufacturing method, characterized in that formed to have a lower height than the top of the structure.
The method according to claim 1 or 2,
In the polishing of the wavelength conversion layer, only a portion corresponding to the second layer is removed.
The method of claim 1,
The forming of the wavelength conversion layer may include forming the wavelength conversion layer to cover the structure.
5. The method of claim 4,
The polishing of the wavelength conversion layer is a step of forming the wavelength conversion layer to expose the structure.
The method of claim 5,
The polishing the wavelength converting layer may include polishing the wavelength converting layer to have a planarized top surface with an upper surface of the structure.
The method of claim 1,
The first layer is a light emitting device manufacturing method, characterized in that the light-transmitting resin layer containing the wavelength conversion material.
The method of claim 7, wherein
The second layer is a light emitting device manufacturing method, characterized in that the light-transmitting resin layer containing the wavelength conversion material at a lower concentration than the wavelength conversion material containing concentration of the first layer.
9. The method of claim 8,
The wavelength conversion material-containing concentration of the second layer is a light emitting device manufacturing method, characterized in that less than 30% of the concentration of the wavelength conversion material of the first layer.
The method of claim 1,
The second layer is a light emitting device manufacturing method, characterized in that the transparent resin layer containing no wavelength conversion material.
The method according to any one of claims 7 to 10,
The light transmitting resin layer of the second layer is a light emitting device manufacturing method, characterized in that the light transmitting resin layer of the first layer is made of the same material.
The method of claim 1,
The wavelength conversion layer is a light emitting device manufacturing method characterized in that it further comprises a light scattering powder.
The method of claim 12,
The light scattering powder is a light emitting device manufacturing method, characterized in that contained in the second layer of the wavelength conversion layer.
The method of claim 1,
The wavelength conversion layer may include at least one third layer containing an optical material different from the optical material contained in at least one of the first and second layers.
The method of claim 1,
Forming the wavelength conversion layer,
And applying a wavelength converting material for correction to at least a portion of the region between the forming of the first layer and the forming of the second layer.
16. The method of claim 15,
The wavelength conversion material for correction is a light emitting device manufacturing method characterized in that it has a different light emission color than the wavelength conversion material contained in the first layer.
16. The method of claim 15,
The correction wavelength conversion material is a light emitting device manufacturing method, characterized in that applied to have a height lower than the top of the structure.
The method of claim 1,
And after removing the wavelength converting layer, removing the structure so that the electrode is exposed.
19. The method of claim 18,
The structure is a light emitting device manufacturing method, characterized in that formed with a photo resist.
20. The method of claim 19,
Removing the structure is a method of manufacturing a light emitting device, characterized in that for removing the structure by applying a flux to the exposed structure.
The method of claim 1,
The structure is a light emitting device manufacturing method characterized in that the conductive bump.
The method of claim 1,
Before forming the wavelength conversion layer, further comprising half dicing a wafer on which the semiconductor stack is formed such that at least the semiconductor stack is separated into individual light emitting device units. .
The method of claim 22,
The forming of the wavelength conversion layer may include forming the wavelength conversion layer such that a wavelength conversion material is filled in the half dicing region.
The cutting of the wafer may include cutting the wafer such that the wavelength conversion layer is maintained in a side region of the light emitting device obtained by the half dicing.
24. The method of claim 23,
The wafer is a conductive wafer, the plurality of electrodes is a semiconductor light emitting device manufacturing method, characterized in that formed in each of the light emitting device area one electrode.
The method of claim 1,
Forming the wavelength conversion layer may include screen printing, spin coating, dispensing, spray coating, tape attaching, electrophoresis, deposition process, A method of manufacturing a light emitting device, characterized in that performed by at least one of sputtering and compression molding.
Providing a light transmissive wafer on which semiconductor laminates for a plurality of light emitting devices are formed;
Applying a light transmissive resin layer to a bottom surface of the light transmissive wafer;
Polishing the light transmissive resin layer to have a flattened surface; And
And forming a wavelength conversion layer containing a wavelength conversion material on the planarized surface.
17. The method of claim 16,
The wafer is an insulating substrate, wherein the plurality of electrodes are formed so that at least two electrodes are located in the light emitting element region, respectively.
KR1020110076721A 2011-08-01 2011-08-01 Manufacturing method of semiconductor light emitting device KR20130014950A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020110076721A KR20130014950A (en) 2011-08-01 2011-08-01 Manufacturing method of semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020110076721A KR20130014950A (en) 2011-08-01 2011-08-01 Manufacturing method of semiconductor light emitting device

Publications (1)

Publication Number Publication Date
KR20130014950A true KR20130014950A (en) 2013-02-12

Family

ID=47894870

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110076721A KR20130014950A (en) 2011-08-01 2011-08-01 Manufacturing method of semiconductor light emitting device

Country Status (1)

Country Link
KR (1) KR20130014950A (en)

Similar Documents

Publication Publication Date Title
JP7136834B2 (en) Wavelength conversion light emitting device with compact light source
US10043955B2 (en) Light emitting diode chip having wavelength converting layer and method of fabricating the same, and package having the light emitting diode chip and method of fabricating the same
CN106558597B (en) Light emitting device package
JP5508244B2 (en) Manufacturing method of semiconductor light emitting device
JP5918221B2 (en) LED chip manufacturing method
US8916890B2 (en) Light emitting diodes with light filters
US20150303355A1 (en) Semiconductor light emitting device and method for manufacturing same
JP5634003B2 (en) Light emitting device
JP6248431B2 (en) Manufacturing method of semiconductor light emitting device
US10283685B2 (en) Light emitting device and method of fabricating the same
JP2013251417A (en) Light-emitting device
US11398462B2 (en) Light emitting device for display and light emitting package having the same
EP2953175B1 (en) Light emitting device module
KR101752425B1 (en) Light emitting diode chip having wavelength converting layer, method of fabricating the same and package having the same
JP2019016821A (en) Semiconductor light-emitting device
JP2016197760A (en) Light-emitting device
CN111129062B (en) LED display module, LED display screen and manufacturing method
US9059381B2 (en) Light emitting device having wavelength converting layer and method of fabricating the same
JP6511809B2 (en) Light emitting device, method of mounting the same, and method of manufacturing light source device
TW201909453A (en) Semiconductor module, display device, and method of manufacturing semiconductor module
KR20120106624A (en) Semiconductor light emitting device wafer and method for manufacturing semiconductor light emitting device
KR20140123720A (en) Light emitting device package and method of manufacturing the same
JP6432654B2 (en) Semiconductor light emitting device
KR20130014950A (en) Manufacturing method of semiconductor light emitting device
US20240105757A1 (en) Pixel device and display apparatus having the same

Legal Events

Date Code Title Description
N231 Notification of change of applicant
WITN Withdrawal due to no request for examination