KR20130007172A - Light emitting device, light emitting device package, and light unit - Google Patents
Light emitting device, light emitting device package, and light unit Download PDFInfo
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- KR20130007172A KR20130007172A KR1020110064100A KR20110064100A KR20130007172A KR 20130007172 A KR20130007172 A KR 20130007172A KR 1020110064100 A KR1020110064100 A KR 1020110064100A KR 20110064100 A KR20110064100 A KR 20110064100A KR 20130007172 A KR20130007172 A KR 20130007172A
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- Prior art keywords
- light emitting
- emitting device
- semiconductor layer
- layer
- emitting structure
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Embodiments relate to a light emitting device, a light emitting device package, and a light unit.
Light emitting diodes (LEDs) are widely used as one of light emitting devices. Light-emitting diodes use the properties of compound semiconductors to convert electrical signals into light, such as infrared or visible light.
Recently, as the light efficiency of the light emitting device is increased, it is used in various fields including a display device and a lighting device.
The embodiment provides a light emitting device, a light emitting device package, and a light unit having a new structure.
The embodiment provides a light emitting device, a light emitting device package, and a light unit capable of improving light extraction efficiency and widening a directing angle at which light is extracted.
The light emitting device according to the embodiment may include a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; An electrode disposed on the light emitting structure; A reflective electrode disposed under the light emitting structure; A resin layer disposed on the light emitting structure and including transparent scattering particles; .
The light emitting device according to the embodiment may include a light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer; A first electrode electrically connected to the first conductive semiconductor layer; A second electrode electrically connected to the second conductive semiconductor layer; A resin layer disposed on the light emitting structure and including transparent scattering particles; .
The light emitting device package according to the embodiment includes a body; A light emitting element disposed on the body; A first lead electrode and a second lead electrode electrically connected to the light emitting element; The light emitting device includes: a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; An electrode disposed on the light emitting structure; A reflective electrode disposed under the light emitting structure; A resin layer disposed on the light emitting structure and including transparent scattering particles; .
The light emitting device package according to the embodiment includes a body; A light emitting element disposed on the body; A first lead electrode and a second lead electrode electrically connected to the light emitting element; The light emitting device includes: a light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer; A first electrode electrically connected to the first conductive semiconductor layer; A second electrode electrically connected to the second conductive semiconductor layer; A resin layer disposed on the light emitting structure and including transparent scattering particles; .
According to an embodiment, a light unit includes a substrate; A light emitting element disposed on the substrate; An optical member through which light provided from the light emitting device passes; The light emitting device includes: a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; An electrode disposed on the light emitting structure; A reflective electrode disposed under the light emitting structure; A resin layer disposed on the light emitting structure and including transparent scattering particles; .
According to an embodiment, a light unit includes a substrate; A light emitting element disposed on the substrate; An optical member through which light provided from the light emitting device passes; The light emitting device includes: a light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer; A first electrode electrically connected to the first conductive semiconductor layer; A second electrode electrically connected to the second conductive semiconductor layer; A resin layer disposed on the light emitting structure and including transparent scattering particles; .
The embodiment can provide a light emitting device, a light emitting device package, and a light unit having a new structure.
The embodiment can provide a light emitting device, a light emitting device package, and a light unit that can improve light extraction efficiency and widen a directing angle at which light is extracted.
1 is a view showing a light emitting device according to an embodiment.
2 and 3 illustrate a modified example of the light emitting structure of FIG. 1.
4 to 11 are views for explaining a method of manufacturing a light emitting device according to the embodiment.
12 is a view showing a light emitting device package to which the light emitting device according to the embodiment is applied.
13 is a diagram illustrating an example of a display device to which a light emitting device is applied, according to an exemplary embodiment.
14 is a diagram illustrating another example of a display device to which a light emitting device is applied, according to an exemplary embodiment.
15 is a diagram illustrating an example of a lighting device to which a light emitting device is applied, according to an embodiment.
In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure may be referred to as being "on" or "under" a substrate, each layer It is to be understood that the terms " on "and " under" include both " directly "or" indirectly " do. In addition, the criteria for the top / bottom or bottom / bottom of each layer are described with reference to the drawings.
The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. In addition, the size of each component does not necessarily reflect the actual size.
Hereinafter, a light emitting device, a light emitting device package, a light unit, and a light emitting device manufacturing method according to embodiments will be described in detail with reference to the accompanying drawings.
1 is a view showing a light emitting device according to an embodiment.
As shown in FIG. 1, the
The
The first
The
The
The second
Meanwhile, the first
Also, a first conductive InGaN / GaN superlattice structure or an InGaN / InGaN superlattice structure may be formed between the first
The
The
The
The current blocking layer (CBL) 30 may be disposed between the
The
The
An
The
The
The
The
The
The upper surface of the
The upper surface of the
As shown in FIG. 2, the light emitting device according to the embodiment may include a curve in which an upper portion of the cross section of the
The
In addition, the upper surface of the
As shown in FIG. 3, the light emitting device according to the embodiment may include a straight line having different slopes at the upper end of the cross-section of the
The
In addition, in the light emitting device according to the embodiment, the upper surface of the
For example, when the curved surface having a concave spherical surface is formed on the upper surface of the
In the above description, the
Next, a method of manufacturing the light emitting device according to the embodiment will be described with reference to FIGS. 4 to 11.
According to the light emitting device manufacturing method according to the embodiment, as shown in Figure 4, the first
The
For example, the first conductivity
The first
The
The
The second
Meanwhile, the first
Also, a first conductive InGaN / GaN superlattice structure or an InGaN / InGaN superlattice structure may be formed between the first
Subsequently, as shown in FIG. 5, a
The
As shown in FIG. 6, an
The
Subsequently, as shown in FIG. 7, the
The
The
Next, the
Subsequently, as shown in FIG. 8, an
The
The upper surface of the
The upper surface of the
For example, when the curved surface having a concave spherical surface is formed on the upper surface of the
Next, as shown in FIG. 9, an etching process is performed on the first
The etching process may be performed by, for example, a dry etching process. Through the etching process, the shape of the
That is, the upper surface of the first
An upper surface of the first conductivity-
For example, when the curved surface having the concave spherical surface is formed on the upper surface of the first conductivity
As shown in FIG. 10, the
The
Subsequently, as illustrated in FIG. 11, isolation etching may be performed along boundaries of individual chips of the
Referring to FIG. 11, a
The
The
The
The
The
The method of forming the
12 is a view showing a light emitting device package to which the light emitting device according to the embodiment is applied.
Referring to FIG. 12, the light emitting device package according to the embodiment includes a
The
The first
The
The
The
A plurality of light emitting devices or light emitting device packages may be arranged on a substrate, and an optical member such as a lens, a light guide plate, a prism sheet, and a diffusion sheet may be disposed on an optical path of the light emitting device package. The light emitting device package, the substrate, and the optical member may function as a light unit. The light unit may be implemented as a top view or a side view type and may be provided in a display device such as a portable terminal and a notebook computer, or may be variously applied to a lighting device and a pointing device. Another embodiment may be implemented as a lighting device including the semiconductor light emitting device or the light emitting device package described in the above embodiments. For example, the lighting device may include a lamp, a streetlight, an electric signboard, and a headlight.
The light emitting device according to the embodiment may be applied to the light unit. The light unit may include a structure in which a plurality of light emitting elements are arranged, and may include the display device illustrated in FIGS. 13 and 14 and the lighting device illustrated in FIG. 15.
Referring to FIG. 13, the
The
The
The
At least one light emitting
The
The plurality of light emitting
The
The
The
The
The
Here, the optical path of the
14 is a diagram illustrating another example of a display device according to an exemplary embodiment.
Referring to FIG. 14, the
The
The
Here, the
The
15 is a perspective view of a lighting apparatus according to an embodiment.
Referring to FIG. 15, the
The
The
The
In addition, the
At least one light emitting
The
The
According to the embodiment, after the light emitting device 200 is packaged, the light emitting device 200 may be mounted on the substrate to be implemented as a light emitting module, or may be mounted and packaged as an LED chip to be implemented as a light emitting module.
Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Further, the features, structures, effects, and the like illustrated in the embodiments can be combined and modified by other persons having ordinary skill in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.
In addition, the above description has been made with reference to the embodiments, which are merely exemplary and are not intended to limit the present invention. Those skilled in the art to which the present invention pertains will be illustrated above in the range without departing from the essential characteristics of the present embodiment. It will be appreciated that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.
10 ...
12 ...
20 ...
40 ...
60 ...
80 ...
95 ...
Claims (16)
An electrode disposed on the light emitting structure;
A reflective electrode disposed under the light emitting structure;
A resin layer disposed on the light emitting structure and including transparent scattering particles;
Light emitting device comprising a.
A first electrode electrically connected to the first conductive semiconductor layer;
A second electrode electrically connected to the second conductive semiconductor layer;
A resin layer disposed on the light emitting structure and including transparent scattering particles;
Light emitting device comprising a.
A light emitting device disposed on the body and according to any one of claims 1 to 10;
A first lead electrode and a second lead electrode electrically connected to the light emitting element;
Light emitting device package comprising a.
A light emitting device disposed on the substrate and according to any one of claims 1 to 10;
An optical member through which light provided from the light emitting device passes;
Light unit comprising a.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020110064100A KR20130007172A (en) | 2011-06-29 | 2011-06-29 | Light emitting device, light emitting device package, and light unit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020110064100A KR20130007172A (en) | 2011-06-29 | 2011-06-29 | Light emitting device, light emitting device package, and light unit |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20130007172A true KR20130007172A (en) | 2013-01-18 |
Family
ID=47837792
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020110064100A KR20130007172A (en) | 2011-06-29 | 2011-06-29 | Light emitting device, light emitting device package, and light unit |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR20130007172A (en) |
-
2011
- 2011-06-29 KR KR1020110064100A patent/KR20130007172A/en not_active Application Discontinuation
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