KR20130007126A - Semiconductor light emitting device, light emitting apparatus and method for manufacturing semiconductor light emitting device - Google Patents

Semiconductor light emitting device, light emitting apparatus and method for manufacturing semiconductor light emitting device Download PDF

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Publication number
KR20130007126A
KR20130007126A KR1020110063805A KR20110063805A KR20130007126A KR 20130007126 A KR20130007126 A KR 20130007126A KR 1020110063805 A KR1020110063805 A KR 1020110063805A KR 20110063805 A KR20110063805 A KR 20110063805A KR 20130007126 A KR20130007126 A KR 20130007126A
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South Korea
Prior art keywords
layer
light emitting
substrate
main surface
reflective layer
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KR1020110063805A
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Korean (ko)
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김태훈
채승완
이승재
김보경
이수열
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삼성전자주식회사
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Publication of KR20130007126A publication Critical patent/KR20130007126A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package

Abstract

PURPOSE: A semiconductor light emitting device, a light emitting device, and a method for manufacturing the semiconductor light emitting device are provided to improve the reliability of a device by forming a reflection layer between the substrate and a semiconductor layer. CONSTITUTION: A light emitting structure includes a first conductive semiconductor layer(12) and a second conductive semiconductor layer(14). The light emitting structure includes an active layer(13) between the semiconductor layers. The substrate is arranged around the first main surface of the light emitting structure. The reflection layer is arranged between the first main surface and the substrate. The reflection layer reflects a part of light emitted from the active layer.

Description

Semiconductor Light Emitting Device, Light Emitting Apparatus And Method for Manufacturing Semiconductor Light Emitting Device

The present invention relates to a semiconductor light emitting device, a light emitting device and a manufacturing method thereof.

A light emitting diode (LED), which is a kind of semiconductor light source, is a semiconductor device capable of generating light of various colors based on recombination of electrons and holes in a junction portion of a p- and n-type semiconductor when current is applied thereto. Such light emitting diodes have a number of advantages, such as long life, low power, excellent initial driving characteristics, and high vibration resistance, compared to filament-based light sources.

However, such a light emitting diode is generally manufactured by growing a semiconductor layer on a substrate such as sapphire, SiC, etc. In this case, the light path is increased due to the difference in refractive index between the semiconductor layer and the substrate, thereby reducing the light extraction efficiency. have.

In order to solve this problem, a reflective layer is formed on the lower surface of the substrate in the case of the light emitting diode in which the electrode pads are located in the same direction, and between the substrate and the semiconductor layer in the case of the light emitting diode in which the electrode pads face each other. In the case of the former, in the case of the former, since the light loss in the process of light propagating to the lower part of the substrate is inevitable, in the latter case, bonding in the bonding process for current injection into the LED bottom surface It is not a complete solution in that performance is degraded due to cracking of the substrate due to fatigue at the interface.

One of the objects of the present invention is to provide a semiconductor light emitting device and a light emitting device using the same, by which a reflective layer is formed therein to increase light extraction efficiency and at the same time improve the reliability of the device.

Another object of the present invention is to provide a method for efficiently manufacturing the semiconductor light emitting device as described above.

One aspect of the present invention to solve the above problems,

A light emitting structure including a first and a second conductive semiconductor layer and an active layer formed therebetween, the light emitting structure having first and second main surfaces respectively provided by the first and second conductive semiconductor layers; A semiconductor comprising a substrate disposed on a first main surface side and a reflective layer disposed between the first main surface and the substrate to reflect at least a portion of the light emitted from the active layer and having a concave-convex pattern formed on a surface facing the first main surface. Provided is a light emitting device.

In one embodiment of the present invention, a transparent refractive layer having a refractive index greater than air between the reflective layer and the first main surface may be further included.

In one embodiment of the present invention, the reflective layer may extend to the side of the substrate.

In an embodiment of the present disclosure, the reflective layer may be formed such that a layer having a relatively high refractive index and a layer having a relatively low refractive index are alternately disposed.

In one embodiment of the present invention, the reflective layer may further include a metal layer on a side surface opposite to the first main surface.

In this case, the metal layer may include at least one material selected from Al, Ag, Au, Pt, Pd, and Rb.

In one embodiment of the present invention, it may further include a transparent conductive layer disposed on the second main surface side.

In one embodiment of the present invention, the light transmissive conductive layer may have a concave-convex pattern formed on a surface facing the second main surface.

In one embodiment of the present invention, the reflective layer may include at least one material selected from Al, Ag, Au, Pt, Pd and Rb. In one embodiment of the present invention, the reflective layer may further include an uneven pattern formed on the surface facing the substrate side.

In one embodiment of the present invention, the substrate may further include an adhesive layer interposed between the substrate and the reflective layer to bond the substrate and the reflective layer.

In an embodiment of the present disclosure, the semiconductor device may further include first and second electrodes electrically connected to the first and second conductive semiconductor layers.

On the other hand, another aspect of the present invention,

First and second conductive semiconductor layers disposed on the mounting substrate and the mounting substrate and provided between the first and second conductive semiconductor layers, respectively, and provided by the first and second conductive semiconductor layers, respectively. A light emitting structure including a light emitting structure having a main surface, a support substrate disposed on a first main surface side of the light emitting structure, and a reflective layer disposed between the first main surface and the support substrate to reflect at least a part of the light emitted from the active layer Provided is a light emitting device including an element.

In one embodiment of the present invention, the reflective layer may have a concave-convex pattern formed on the surface facing the first main surface.

In one embodiment of the present invention, the reflective layer may also be formed between the mounting substrate and the support substrate.

In one embodiment of the present invention, it may further include a bonding paste interposed between the mounting substrate and the support substrate.

In one embodiment of the present invention, the bonding paste is AuIn, CnSn, AuSn, AuGe,

It may include at least one or more of AuSi, AlGe and AlSi.

According to another aspect of the present invention,

A light emitting structure having a first and a second main surface provided by the first and second conductive semiconductor layers, respectively, by sequentially stacking a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a first substrate. Forming a surface of the first main surface by exposing the first substrate from the light emitting structure, forming an uneven pattern on the exposed first main surface, and forming a first uneven pattern Forming a reflective layer reflecting at least a portion of the light emitted from the active layer on the main surface so that the concave-convex shape of the first main surface is transferred to the reflective layer and facing the first main surface side with the reflective layer therebetween; It provides a method for manufacturing a semiconductor light emitting device comprising the step of placing two substrates.

In example embodiments, the method may further include forming a spin on glass (SOG) layer to cover at least a portion of the second main surface after the forming of the light emitting structure.

In this case, the step of forming a spin-on glass (SOG) layer may further comprise the step of curing the spin-on glass layer by heat treatment.

In some embodiments, after the disposing of the second substrate, the spin-on-glass layer may be separated from the light emitting structure to expose the second main surface.

In this case, the spin-on-glass layer is separated from the light emitting structure by wet etching.

In an embodiment of the present disclosure, the forming of the spin-on-glass layer may include the first electrode, the second electrode, the second main surface, and the light emitting structure to partially cover the exposed first main surface. The spin on glass layer can be filled.

In an embodiment of the present disclosure, after the exposing of the first main surface, the method may further include forming an uneven pattern on the first main surface.

In an embodiment of the present disclosure, after the forming of the light emitting structure, the method may further include forming a transparent conductive layer on the second main surface.

In this case, the method may further include forming an uneven pattern on the surface of the light transmissive conductive layer facing the second main surface side.

In an embodiment of the present disclosure, after exposing the first main surface, the method may further include forming a transparent refractive layer having a refractive index greater than air on the first main surface.

In an embodiment of the present disclosure, after the forming of the reflective layer, the method may further include forming an adhesive layer interposed between the second substrate and the reflective layer to bond the substrate and the reflective layer.

In an embodiment of the present disclosure, after the forming of the spin-on-glass layer, the method may further include disposing the temporary substrate to face the second main surface with the spin-on-glass layer therebetween.

In this case, the temporary substrate may include SiO 2 .

In an embodiment of the present disclosure, the method may further include disposing first and second electrodes electrically connected to the first and second conductivity-type semiconductor layers, respectively.

According to one embodiment of the present invention, a semiconductor light emitting device and a light emitting device can be obtained by forming a reflective layer between the substrate and the semiconductor layer to increase the light extraction efficiency and at the same time improve the reliability of the device.

1 is a schematic cross-sectional view of a semiconductor light emitting device according to an embodiment of the present invention.
2 is a schematic cross-sectional view of a semiconductor light emitting device according to an embodiment of the present invention.
3 is a schematic cross-sectional view of a semiconductor light emitting device according to an embodiment of the present invention.
4 is a schematic cross-sectional view of a semiconductor light emitting device according to an embodiment of the present invention.
5 is a schematic cross-sectional view of a semiconductor light emitting device according to an embodiment of the present invention.
6 is a schematic cross-sectional view of a semiconductor light emitting device according to an embodiment of the present invention.
7 is a schematic cross-sectional view of a semiconductor light emitting device according to an embodiment of the present invention.
8 is a schematic cross-sectional view of a semiconductor light emitting device according to an embodiment of the present invention.
9 is a schematic cross-sectional view of a semiconductor light emitting device according to an embodiment of the present invention.
10 to 14 are process cross-sectional views sequentially illustrating a method of manufacturing a semiconductor light emitting device according to an embodiment of the present invention.
15 and 16 are cross-sectional views of some processes of a method of manufacturing a semiconductor light emitting device according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

However, the embodiments of the present invention can be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. Further, the embodiments of the present invention are provided to more fully explain the present invention to those skilled in the art. Accordingly, the shape and size of elements in the drawings may be exaggerated for clarity, and the elements denoted by the same reference numerals in the drawings are the same elements.

1 is a schematic cross-sectional view of a semiconductor light emitting device according to an embodiment of the present invention. Referring to FIG. 1, the semiconductor light emitting device according to the present embodiment includes a substrate 11, a first conductive semiconductor layer 12, an active layer 13, and a second conductive layer sequentially grown on the substrate 11. In this case, a structure including the first conductive semiconductor layer 12, the active layer 13, and the second conductive semiconductor layer 14 may be referred to as a light emitting structure. In addition, a reflective layer 17 having a light reflection function may be formed between the substrate 11 and the light emitting structure to guide light directed toward the substrate 11 upward. Hereinafter, the components of the semiconductor light emitting device according to the present embodiment will be described in detail. However, in this specification, terms such as 'top', 'bottom', and 'side' are based on the drawings and may actually vary depending on the direction in which the device is disposed.

The substrate 11 may be provided as an insulating substrate for supporting the light emitting structure, and for example, a substrate such as sapphire and SiC may be used. In the present embodiment, the substrate 11 is not a growth substrate on which the semiconductor layer is grown, but is attached after the formation of the light emitting structure is completed, as described later in the description of the process, to support the light emitting structure. It can serve as a substrate.

In the case of using the insulating substrate as described above, since it is difficult to apply current from the substrate 11 side, as shown in the present embodiment, both the first and second electrodes 15 and 16 face the substrate 11. It can be formed on the surface, it can be provided as a semiconductor light emitting device of the form facing in the same direction. That is, a portion of the light emitting structure is removed to expose the top surface of the first conductivity type semiconductor layer 12, and the first electrode 15 is formed on the exposed first conductivity type semiconductor layer 12. The second electrodes 16 may be formed on the second conductive semiconductor layer, respectively. In this case, the first and second electrodes 15 and 16 may be electrically connected to the first and second conductive semiconductor layers 12 and 14, respectively. However, it is not necessarily limited to these embodiments, it will be apparent to those of ordinary skill in the art that various modifications are possible depending on the embodiment.

The first and second conductivity-type semiconductor layers 12 and 14 may be n-type and p-type semiconductor layers, respectively, and are nitride semiconductors, that is, Al x In y Ga (1-xy) N (0 = x = 1, 0 = y = 1, 0 = x + y = 1). Therefore, the present invention is not limited thereto, but in the present embodiment, the first and second conductivity types may be understood to mean n-type and p-type, respectively.

The active layer 13 is formed between the first and second conductivity type semiconductor layers 12 and 14 and emits light having a predetermined energy by recombination of electrons and holes, and the quantum well layer and the quantum barrier layer alternate with each other. A multi-quantum well (MQW) structure, for example, InGaN / GaN structure, can be used.

Meanwhile, the first and second conductive semiconductor layers 12 and 14 and the active layer 13 constituting the light emitting structure may include metal organic chemical vapor deposition (MOCVD) and hydrogenation vapor phase epitaxy. , 'HVPE'), Molecular Beam Epitaxy (MBE) and the like can be grown using processes known in the art.

The reflective layer 17 is formed on the substrate 11, and reflects light traveling from the active layer 13 toward the substrate 11 to switch the light propagation direction toward the upper surface of the light emitting structure in the light extraction direction. It may be performed, and may include a material having a relatively high light reflectivity, for example, at least one or more of Al, Ag, Au, Pt, Pd and Rb. In addition, the reflective layer 17 may be formed as a single layer, and although not shown, a layer having a relatively high refractive index and a layer having a relatively low refractive index are alternately arranged to provide a distributed bragg reflector (DBR) structure or the like. It can be formed to achieve.

On the other hand, in the case of the semiconductor light emitting device in which both the first and second electrodes 15 and 16 are formed on the surface facing the substrate 11 and face in the same direction as in the present embodiment, generally on the growth substrate Since the light emitting structure is grown, a reflective layer cannot be formed between the light emitting structure and the substrate, so that the light emitting structure is formed on the lower surface of the substrate. On the other hand, in the present embodiment, the reflective layer 17 may be positioned between the substrate 11 and the light emitting structure by employing the manufacturing process described below. Accordingly, the optical path may be reduced compared to the case where the reflective layer is formed on the lower surface of the substrate. It can reduce the light extraction efficiency can be increased.

In addition, an uneven structure may be formed on at least a portion of the surface of the reflective layer 17, for example, an interface formed by the reflective layer 17 and the first conductive semiconductor layer 12 meeting each other. The uneven structure may be formed to have a region in which at least a portion of the upper surface of the reflective layer 17 protrudes convexly. Such uneven structure may be formed so that at least one of its size and arrangement has a regular pattern, and its size and arrangement may be irregular.

If there is no uneven pattern in the reflective layer, that is, the upper surface has a planar shape, the reflective layer reflects light incident on the surface of the reflective layer to have the same reflection angle as the incident angle. Therefore, in the case of light having a large incident angle, the reflection in the lateral direction continues to disappear in the light emitting structure or light may be emitted in an undesired direction other than the upper surface of the light emitting structure, and thus the light extraction efficiency may be reduced. On the contrary, in the case of the reflective layer 17 having the concave-convex pattern shown in the present embodiment, even light incident to the side while having a large incident angle can be reflected toward the upper surface of the light emitting structure, thereby increasing light extraction efficiency.

The first and second electrodes 15 and 16 may be electrically connected to the first and second conductive semiconductor layers 12 and 14, respectively, to supply external power, and have a high electrical conductivity. Preferably, at least one of Au, Ni, Pt, Ag, and Al may be formed.

2 is a schematic cross-sectional view of a semiconductor light emitting device according to another exemplary embodiment of the present invention. Referring to FIG. 2, a structure including the substrate 11, the first conductivity type semiconductor layer 12, the active layer 13, and the second conductivity type semiconductor layer 14 may be provided as in the previous embodiment. In this case, the components denoted by the same numerals correspond to the same components as those of FIG. 1, and thus detailed description thereof will be omitted.

The difference from the previous embodiment in this embodiment is that the uneven structure of the reflective layer 27 is formed not only at the interface with the first conductivity-type semiconductor layer 12 but also at the interface with the substrate 11. When light that is not reflected at the interface between the reflective layer 27 and the first conductivity type semiconductor layer 12 and continues to the substrate 11 is incident on the interface between the reflective layer 27 and the substrate 11, the reflection probability is increased. Maximize the light extraction efficiency can be obtained.

3 is a schematic cross-sectional view of a semiconductor light emitting device according to another exemplary embodiment of the present invention. Referring to FIG. 3, it may be provided in a structure including a substrate 11, a first conductivity type semiconductor layer 12, an active layer 13, and a second conductivity type semiconductor layer 14, as in the previous embodiment. In this case, the components denoted by the same numerals correspond to the same components as those of FIG. 1, and thus detailed description thereof will be omitted.

In the case of the present embodiment, the difference from the previous embodiment is that the second electrode 16 is not directly formed on the second conductive semiconductor layer 14, and the light-transmissive conductive layer 31 is formed therebetween. By this structure, the light emitted from the active layer 13 is transmitted to the outside through the second conductivity-type semiconductor layer 14, while reducing the total internal reflection to allow as much light to pass as possible, Since the electrical conductivity is excellent, the current applied from the second electrode 16 can be spread evenly over the front of the light emitting structure, thereby improving the current flow.

In this case, the light transmissive conductive layer 31 may be made of a material such as ITO, CIO, ZnO, or the like, and preferably has a smaller refractive index than the second conductive semiconductor layer 14 in contact with the bottom surface thereof. In addition, although not shown, an uneven structure is formed on the upper surface of the transparent conductive layer 31 to prevent internal loss of light due to total reflection and to increase light extraction efficiency.

4 is a schematic cross-sectional view of a semiconductor light emitting device according to another embodiment of the present invention. Referring to FIG. 4, a structure including the substrate 11, the first conductivity type semiconductor layer 12, the active layer 13, and the second conductivity type semiconductor layer 14 may be provided as in the previous embodiment. In this case, the components denoted by the same numerals correspond to the same components as those of FIG. 1, and thus detailed description thereof will be omitted.

In this embodiment, the difference from the previous embodiment is that the transparent refractive layer 41 is further included between the reflective layer 17 and the first conductivity-type semiconductor layer 12. By reducing the incident angle of the light emitted and incident on the reflective layer 17, it is possible to obtain an effect of increasing the probability that the reflected light is reflected to the upper surface side of the light emitting structure.

In this case, the transparent refractive layer 41 has a value between the refractive index of the reflective layer 17 and the refractive index of the first conductivity-type semiconductor layer 12, so that light incident from the side surface is incident on the upper surface of the light emitting structure. It may be provided in a configuration for switching the direction of travel so as to be incident close to the vertical. The transparent refractive layer 41 may be formed of a type of glue formed of a polymer or a dielectric material. Preferably, the transparent refractive layer 41 has a thickness of 5 μm or less and has a high thermal conductivity and a refractive index of 1 to 2. Can be.

5 is a schematic cross-sectional view of a semiconductor light emitting device according to another embodiment of the present invention. Referring to FIG. 5, a structure including the substrate 11, the first conductivity type semiconductor layer 12, the active layer 13, and the second conductivity type semiconductor layer 14 may be provided as in the previous embodiment. In this case, the components denoted by the same numerals correspond to the same components as those of FIG. 1, and thus detailed description thereof will be omitted.

The difference from the previous embodiment in this embodiment is that the adhesive layer 51 is further included between the reflective layer 17 and the substrate 11, and through this structure, the adhesive layer 51 is formed by the reflective layer 17 and the substrate ( 11) can be securely connected. In this case, the adhesive layer may be provided including a metal material selected from the group consisting of Au—Sn, Au—Ag, and Pb—Sn.

6 to 8 are cross-sectional views schematically showing light emitting devices according to one embodiment of the present invention.

Referring first to FIG. 6, a semiconductor light emitting device including a substrate 11, a first conductive semiconductor layer 12, an active layer 13, and a second conductive semiconductor layer 14 illustrated in the foregoing embodiments; A mounting substrate 61 disposed below the substrate to support the semiconductor light emitting device, and an external electrode 62 and a conductive wire 63 disposed on the support to supply power to the semiconductor light emitting device. It may be provided in a configuration to. In this case, the components denoted by the same numerals correspond to the same components as those of FIG. 1, and thus detailed description thereof will be omitted.

In this case, the mounting substrate 61 supports the light emitting structure and other components and provides a substrate, preferably a printed circuit board (PCB) having a wiring structure, to obtain an effect of minimizing device size. Can be.

In addition, although not shown, the configuration in which the reflective layer 17 extends to at least a portion of the region between the mounting substrate 61 and the substrate 11 and the side surface of the substrate 11 may be formed. A bonding paste made of a material including at least one of AuIn, CnSn, AuSn, AuGe, AuSi, AlGe, and AlSi may be interposed between the substrates 61 to perform bonding and heat dissipation.

7 to 14 are cross-sectional views for each step schematically showing a method for manufacturing a semiconductor light emitting device according to one embodiment of the present invention.

First, as shown in FIG. 7, the semiconductor thin film forming process in which the first conductive semiconductor layer 102, the active layer 103 and the second conductive semiconductor layer 1074 are described above on the first substrate 101A, For example, it forms sequentially using processes, such as MOCVD and HVPE. In this case, a structure including the first conductive semiconductor layer 102, the active layer 103, and the second conductive semiconductor layer 104 may be referred to as a light emitting structure. The first substrate 101A is provided as a substrate for semiconductor growth, and may not be included in the final device in this embodiment. That is, as described below, the first substrate 101A may be removed from the light emitting structure.

Next, as shown in FIG. 8, a portion of the light emitting structure may be removed to expose the surface of the first conductivity-type semiconductor layer 102, and on the exposed surface of the first conductivity-type semiconductor layer 102. The first electrode 105 can be formed on the second conductive semiconductor layer 104, respectively. In addition, although not shown, a process of forming a transparent conductive layer including ITO, CIO, ZnO, etc. may be further included on at least a portion of the upper surface of the light emitting structure. In this case, the process of partially removing the light emitting structure may be performed after the transparent conductive layer is formed.

Next, as shown in FIG. 9, a spin on glass (SOG) layer 108 may be formed on the entire upper surface of the light emitting structure. In this case, the spin-on-glass layer rotates the entire substrate 101A at a high speed (notice that FIG. 9 briefly illustrates only a portion where one light emitting structure is formed among all the substrates on which the plurality of light emitting structures are formed). The term 'rotating the substrate' may be understood as the meaning of rotating the entire substrate on which the plurality of light emitting structures are formed). The centrifugal force may be used to apply the liquid material onto the substrate. In the above, the solution is planarized to the viscosity of the solution, and the lower surface of the light emitting structure is a step of the unevenness (for example, as described above, the step that occurs due to the removal of a portion of the upper surface of the light emitting structure and the first and second electrodes Step and the like) can be filled.

As such, since the spin-on-glass layer 108 may be coated on the entire upper surface of the light emitting structure in which the step exists, and the upper surface thereof may be flat, the spin layer of the adhesive layer for firmly connecting the second substrate and the semiconductor light emitting device to be described later In addition to performing a role, when the coating is applied to a sufficient thickness and has a constant durability through a curing process through heat treatment, it may serve as a support substrate supporting the semiconductor light emitting device by itself.

In addition, the material of the spin-on glass layer 108 is largely divided into inorganic and organic, and exhibits different characteristics depending on the polymer chemical molecular structure and the type of solvent, but the material is polymerized through curing and baking after rotational coating. desirable.

Next, as shown in FIG. 10, the temporary substrate 101B is formed on the top surface of the planarized spin-on glass layer 108, and heat-treated to cure the spin-on glass layer 108 to cure the temporary substrate and the light. The light emitting structure may be supported by firmly bonding between the structures. In this case, when the temporary substrate is provided with a material including SiO 2 , the temporary substrate may be strongly bonded to the spin-on glass layer 108.

However, the process of forming the temporary substrate 101B is not essential. As described above, the spin-on-glass layer 108 is formed to have a predetermined thickness or more without forming the temporary substrate 101B, and thus the semiconductor light emitting device itself is formed. Can serve as a support substrate for supporting the.

On the other hand, even in the case of including the step of forming the temporary substrate 101B, in the present embodiment, the temporary substrate 101B may not be included in the final element as in the above-described first substrate 101A. That is, as described below, the temporary substrate 101B may be removed from the light emitting structure, but by forming the temporary substrate 101B adhered to the light emitting structure through the spin-on glass layer 108, the light emitting structure may be inverted to form a first substrate 101B. The first substrate 101A may be removed, and the first conductivity-type semiconductor layer 102 may be exposed to the upper portion to perform the post process.

Next, as shown in FIG. 11, the surface of the first conductivity-type semiconductor layer may be exposed by removing the first substrate 101A. In this case, the substrate may be preferably removed through a laser lift-off (LLO), and although not shown, a transparent refractive layer having a refractive index greater than air is formed on the exposed surface of the first conductive semiconductor layer 102. The process may be further included. In addition, the transparent refractive layer may be formed of a type of glue including a polymer or a dielectric material, and preferably has a thickness of 5 μm or less and a high thermal conductivity while having a refractive index between 1 and 2.

Next, as shown in FIG. 12, the reflective layer 107 may be formed on the exposed surface of the first conductivity-type semiconductor layer 102 by removing the first substrate 101A. In the present exemplary embodiment, although the interface between the first conductivity-type semiconductor layer 102 and the reflective layer 107 is formed to form a flat reflective layer, the present invention is not limited thereto. As shown in FIGS. 1 Unevenness is formed on the surface of the first conductive semiconductor layer 102 exposed by removing the substrate 101A by etching, and a reflective layer is formed thereon to form the unevenness formed on the surface of the first conductive semiconductor layer 102. The surface may be naturally transferred to the reflective layer 167 to provide a reflective layer having an uneven structure.

As described above, in the present embodiment, the first substrate 101A is not provided as a growth substrate but is removed during the process so that it is possible to expose the surface of the first conductivity type semiconductor layer 102, and thus the reflective layer is directly contacted with the light emitting structure. It is possible to shorten the optical path and reduce the light loss by forming.

Next, as shown in FIG. 13, the second substrate 101C is formed on the reflective layer 107, and the spin-on glass layer 108 and the temporary substrate 101B are separated to form a semiconductor as shown in FIG. The light emitting element can be completed.

In this case, although not shown, a step of interposing an adhesive layer may be further included between the reflective layer 107 and the second substrate 101C for firm bonding. In this case, the adhesive layer may be provided including a metal material selected from the group consisting of Au—Sn, Au—Ag, and Pb—Sn.

In addition, the process of removing the spin-on-glass layer may use wet etching, preferably BOE (Buffered Oxide Etch).

The present invention is not limited by the above-described embodiments and the accompanying drawings, but is defined by the appended claims. Therefore, it will be apparent to those skilled in the art that various forms of substitution, modification, and alteration are possible without departing from the technical spirit of the present invention described in the claims, and the appended claims. Will belong to the technical spirit described in.

11, 21: substrate 101A: first substrate
101B: temporary substrate 101C: second substrate
12, 102: first conductive semiconductor layer 13, 103: active layer
14 and 104: second conductive semiconductor layer 15 and 105: first electrode
16, 106: second electrode 17, 27, 107, 167: reflective layer
31: transparent conductive layer 41: transparent refractive layer
51: adhesive layer 61: support
62: external electrode 63: conductive wire
108: spin on glass layer

Claims (30)

A light emitting structure including first and second conductive semiconductor layers and an active layer formed therebetween, the light emitting structure having first and second main surfaces respectively provided by the first and second conductive semiconductor layers;
A substrate disposed on a first main surface side of the light emitting structure; And
A reflective layer disposed between the first main surface and the substrate to reflect at least a portion of the light emitted from the active layer, the reflective layer having a concave-convex pattern formed on a surface facing the first main surface;
Semiconductor light emitting device comprising a.
The method of claim 1,
And a transparent refractive layer having a refractive index greater than air between the reflective layer and the first main surface.
The method of claim 1,
The reflective layer extends to the side of the substrate.
The method of claim 1,
And the reflective layer is formed such that a layer having a relatively high refractive index and a layer having a relatively low refractive index are alternately arranged.
The semiconductor light emitting device of claim 4, wherein the reflective layer further comprises a metal layer on a side surface of the reflective layer, the side surface of which is opposite to the first main surface.
The method of claim 5,
The metal layer is a semiconductor light emitting device, characterized in that formed with at least one material selected from Al, Ag, Au, Pt, Pd and Rb.
The method of claim 1,
And a light transmissive conductive layer disposed on the second main surface side.
The method of claim 1,
And the light transmissive conductive layer has a concave-convex pattern formed on a surface opposing the second main surface.
The method of claim 1,
The reflective layer further comprises a concave-convex pattern formed on the surface facing the substrate side.
The method of claim 1,
And a bonding layer interposed between the substrate and the reflective layer to bond the substrate and the reflective layer.
The method of claim 1,
And first and second electrodes electrically connected to the first and second conductive semiconductor layers.
A mounting board; And
A first and a second conductive semiconductor layer disposed on the mounting substrate and having an active layer formed therebetween, the first and second conductive semiconductor layers being provided by the first and second conductive semiconductor layers, respectively; A semiconductor light emitting device including a light emitting structure, a support substrate disposed on a first main surface side of the light emitting structure, and a reflective layer disposed between the first main surface and the support substrate to reflect at least a portion of light emitted from the active layer;
Light emitting device comprising a.
The method of claim 12,
The reflective layer has a concave-convex pattern formed on the surface facing the first main surface.
The method of claim 12,
The reflective layer is formed between the mounting substrate and the support substrate.
The method of claim 12,
And a bonding paste interposed between the mounting substrate and the support substrate.
The method of claim 12,
The bonding paste comprises at least one of AuIn, CnSn, AuSn, AuGe, AuSi, AlGe and AlSi.
A light emitting structure having a first and a second main surface provided by the first and second conductive semiconductor layers, respectively, by sequentially stacking a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a first substrate. Forming a;
Separating the first substrate from the light emitting structure to expose the first main surface;
Forming an uneven pattern on the exposed first main surface;
Forming a reflective layer on the first main surface on which the uneven pattern is formed to reflect at least a portion of the light emitted from the active layer so that the uneven shape of the first main surface is transferred to the reflective layer; And
Disposing a second substrate to face the first main surface side with the reflective layer therebetween;
Semiconductor light emitting device manufacturing method comprising a.
18. The method of claim 17,
And forming a spin-on-glass (SOG) layer to cover at least a portion of the second main surface after the forming of the light emitting structure.
18. The method of claim 17,
And forming a spin-on-glass layer and then curing the spin-on-glass layer by heat treatment.
18. The method of claim 17,
And disposing the spin-on-glass layer from the light emitting structure after the disposing of the second substrate to expose the second main surface.
The method of claim 20, wherein the spin-on-glass layer is separated from the light emitting structure by wet etching.
18. The method of claim 17,
The forming of the spin on glass layer may include filling the spin on glass layer to cover the exposed first main surface by partially removing the first electrode, the second electrode, the second main surface, and the light emitting structure. A method of manufacturing a semiconductor light emitting device.
18. The method of claim 17,
And after the exposing the first main surface, forming a concave-convex pattern on the first main surface.
18. The method of claim 17,
And forming a light-transmitting conductive layer on the second main surface after the forming of the light emitting structure.
25. The method of claim 24,
And forming a concave-convex pattern on the surface of the light transmissive conductive layer facing the second main surface side.
18. The method of claim 17,
And after the exposing of the first main surface, forming a transparent refractive layer having a refractive index greater than air on the first main surface.
18. The method of claim 17,
And after the forming of the reflective layer, forming an adhesive layer interposed between the second substrate and the reflective layer to bond the substrate and the reflective layer.
18. The method of claim 17,
And disposing a temporary substrate to face the second main surface with the spin on glass layer therebetween after forming the spin on glass layer.
28. The method of claim 27,
The temporary substrate is a semiconductor light emitting device manufacturing method comprising a SiO 2 .
18. The method of claim 17,
And disposing first and second electrodes electrically connected to the first and second conductivity-type semiconductor layers, respectively.
KR1020110063805A 2011-06-29 2011-06-29 Semiconductor light emitting device, light emitting apparatus and method for manufacturing semiconductor light emitting device KR20130007126A (en)

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KR101436133B1 (en) * 2013-02-20 2014-09-01 고려대학교 산학협력단 Vertical light emitting diode having transparent electrode
KR101498130B1 (en) * 2013-07-19 2015-03-04 엠케이전자 주식회사 Manufacturing method of light emitting element comprising substrate having excellent thermal conductivity in thickness direction
WO2015152652A1 (en) * 2014-04-03 2015-10-08 엘지이노텍 주식회사 Light-emitting device and lighting apparatus having same
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KR101436133B1 (en) * 2013-02-20 2014-09-01 고려대학교 산학협력단 Vertical light emitting diode having transparent electrode
US9559262B2 (en) 2013-02-20 2017-01-31 Korea University Research And Business Foundation Vertical type light emitting device having transparent electrode and method of manufacturing the same
KR101498130B1 (en) * 2013-07-19 2015-03-04 엠케이전자 주식회사 Manufacturing method of light emitting element comprising substrate having excellent thermal conductivity in thickness direction
WO2015152652A1 (en) * 2014-04-03 2015-10-08 엘지이노텍 주식회사 Light-emitting device and lighting apparatus having same
US9865778B2 (en) 2014-04-03 2018-01-09 Lg Innotek Co., Ltd. Light emitting device and lighting apparatus having same
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US11367819B2 (en) 2014-08-26 2022-06-21 Suzhou Lekin Semiconductor Co., Ltd. Light-emitting device array and light-emitting apparatus including light-emitting device array
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