KR20130007066A - Satellite for chemical mechanical deposition apparatus and apparatus for chemical mechanical deposition having the same - Google Patents

Satellite for chemical mechanical deposition apparatus and apparatus for chemical mechanical deposition having the same Download PDF

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Publication number
KR20130007066A
KR20130007066A KR1020110063195A KR20110063195A KR20130007066A KR 20130007066 A KR20130007066 A KR 20130007066A KR 1020110063195 A KR1020110063195 A KR 1020110063195A KR 20110063195 A KR20110063195 A KR 20110063195A KR 20130007066 A KR20130007066 A KR 20130007066A
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KR
South Korea
Prior art keywords
substrate
satellite
vapor deposition
chemical vapor
deposition apparatus
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KR1020110063195A
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Korean (ko)
Inventor
장성환
정호일
한일섭
박언덕
박건
Original Assignee
(주)세미머티리얼즈
박건
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Priority to KR1020110063195A priority Critical patent/KR20130007066A/en
Publication of KR20130007066A publication Critical patent/KR20130007066A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE: A satellite for a chemical mechanical vapor deposition device and the chemical mechanical vapor deposition device including the same are provided to improve the uniformity of a thin film deposition by uniformizing a temperature even though a substrate is bent. CONSTITUTION: A chamber(110) forms a vacuum space. A satellite(120) is formed in the chamber and receives a substrate(130). A susceptor includes the satellite. An RF coil(140) is located near the lower side of the susceptor.

Description

Satellite for chemical vapor deposition apparatus and chemical vapor deposition apparatus having the same {Satellite for chemical mechanical deposition apparatus and apparatus for chemical mechanical deposition having the same}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus, and more particularly, to a satellite used in a metal organic chemical vapor deposition (MOCVD) apparatus and a chemical vapor deposition apparatus having the same.

In general, a metal organic chemical mechanical vapor deposition (MOCVD) apparatus is a thin film forming apparatus for depositing a semiconductor material and the like using a chemical reaction. The MOCVD apparatus is a device for flowing a high vapor pressure organic compound vapor and a reaction gas to a heated substrate in a vacuum chamber to grow the reactant on the substrate.

FIG. 1 is a view schematically showing a conventional chemical vapor deposition apparatus, and FIG. 2 is a view showing a state in which a substrate is mounted on a satellite of a conventional chemical vapor deposition apparatus and being in process.

Referring to FIG. 1, a chemical vapor deposition apparatus includes a chamber 10 forming a predetermined vacuum space, a susceptor 20 provided inside the chamber 10 and receiving a substrate 30, and the susceptor. A rhenium (Re) or tungsten (W) heater including an RF coil 40 provided adjacent to 20 and performing the same role in place of the RF coil may be provided.

The side of the chamber 10 is provided with a gas introduction portion 11 for introducing a source gas for forming a thin film, the source gas introduced through the gas introduction portion 11 at the center of the chamber 10 is inside the chamber 10. A gas exhaust port 12 is provided to flow and discharge the gas.

The susceptor 20 is provided with a plurality of pockets 21, and the pockets 21 are provided with a satellite 25 for accommodating the substrate 30 to be deposited. Each substrate 30 accommodated in the satellite 25 forms a predetermined thin film on its surface by the heat supplied from the RF coil 40 or the heater and the reaction gas supplied through the gas inlet 11.

However, in the process of forming a thin film on the substrate 30, a very high temperature of high temperature is generated in the susceptor by the electric field induced from the RF coil 40, wherein the edge of the substrate 30 is bowing upwards. effect) occurs.

However, as shown in FIG. 2, since the bottom surface of the conventional satellite 25 accommodates the substrate 30, the substrate 30 is bent in the process of growing a thin film on the substrate 30. As a result, the heat received by the center and the edge of the substrate is different. As a result, the temperature of the substrate is not uniform as a whole, there is a problem that the growth of the thin film is not made uniform throughout the substrate.

3 is a view showing the results of testing the temperature uniformity of the substrate with respect to the susceptor of the chemical vapor deposition apparatus.

This indicates the temperature uniformity of the substrate on which the deposition is performed in the susceptor having a flat bottom surface using photoluminescence equipment as the wavelength of the emitted light with respect to the stimulus light.

As shown in FIG. 3, since the warpage of the substrate occurs in the deposition process, it can be seen that the wavelength of the emitted light is the lowest at the center and the wavelength is longer toward the edge. This indicates that the temperature at the center of the substrate is higher than the edge of the substrate where the warpage occurs. The overall unevenness of the wavelength and the standard deviation of the wavelength are approximately 5.8 nm. Therefore, even when the temperature of the substrate is not uniform during the deposition of the substrate, the grown thin film is inferior in uniformity.

As a method of improving the temperature uniformity and the uniformity of thin film growth, various methods such as rotating the susceptor, rotating each substrate, and controlling the temperature by controlling the RF coil have been proposed. If it is fast, there is a limit to improving the temperature uniformity.

Therefore, the technical problem to be achieved by the present invention is a chemical vapor deposition apparatus for processing a uniform circular depth in the center of the satellite on which the substrate is seated to minimize the temperature variation between the edge and the center to enable the uniform film growth To provide light.

Another object of the present invention is to provide a chemical vapor deposition apparatus having a satellite that can minimize the temperature variation of the edge and the center of the substrate.

In order to achieve the above technical problem, a satellite for chemical vapor deposition apparatus according to an embodiment of the present invention is mounted on a susceptor, a pocket accommodating a substrate to be deposited therein; A seating part provided with a stepped downward from an upper end of the pocket to place a substrate; And a stepped portion formed at a predetermined depth from the seating portion.

In order to achieve the above technical problem, a satellite for chemical vapor deposition apparatus according to another embodiment of the present invention includes: a pocket mounted on a susceptor and accommodating a substrate to be deposited therein; A seating part provided with a stepped downward from an upper end of the pocket to place a substrate; And at least one groove formed at the center of the seating portion.

In order to achieve the above technical problem, a satellite for chemical vapor deposition apparatus according to another embodiment of the present invention includes: a pocket mounted on a susceptor and accommodating a substrate to be deposited therein; And it comprises a seating portion provided to place the substrate from the top of the pocket to step down, the seating portion is characterized in that the top surface is flat, the bottom surface is inclined so as to become thinner toward the center from the edge.

Chemical vapor deposition apparatus according to an embodiment of the present invention to achieve the above another technical problem, the chamber providing a space in which the deposition is made; A susceptor installed in the chamber and having at least one pocket; Heating means provided adjacent to the susceptor and heating the substrate; And a pocket provided in a pocket of the susceptor, the pocket accommodating the substrate therein, a seating portion provided to form a step from the top of the pocket downward, and a stepped portion formed at a predetermined depth from the seating portion. Characterized in that it comprises a satellite.

According to another aspect of the present invention, there is provided a chemical vapor deposition apparatus comprising: a chamber providing a space in which deposition is performed; A susceptor installed in the chamber and having at least one pocket; Heating means provided adjacent to the susceptor and heating the substrate; And a pocket mounted on the susceptor, the pocket accommodating the substrate to be deposited therein, a seating portion arranged to form a step downward from an upper end of the pocket, and at least one groove formed at the center of the seating portion. Characterized in that it comprises a satellite having a.

In order to achieve the above another technical problem, a chemical vapor deposition apparatus according to another embodiment of the present invention, the chamber providing a space in which the deposition is made; A susceptor installed in the chamber and having at least one pocket; Heating means provided adjacent to the susceptor and heating the substrate; And a pocket mounted on the susceptor, the pocket accommodating the substrate to be deposited therein, and a seating portion arranged to form a step downward from an upper end of the pocket, wherein the seating portion has a flat top surface, The bottom surface is characterized in that it comprises a satellite inclined so as to become thinner from the edge toward the center.

According to the satellite of the present invention and the chemical vapor deposition apparatus employing the same, by changing the structure of the satellite housing the substrate to be deposited, even when the substrate warpage occurs during the high temperature chemical vapor deposition process, The temperature of the edge can be made uniform. Therefore, it is possible to make the deposition of a uniform thin film over the entire substrate.

1 is a view schematically showing a conventional general chemical vapor deposition apparatus.
FIG. 2 is a view showing a state in which a substrate is mounted on a satellite of a conventional chemical vapor deposition apparatus and is in process.
3 is a view showing the results of testing the temperature uniformity of the substrate with respect to the susceptor of the conventional chemical vapor deposition apparatus.
4 is a view schematically showing a chemical vapor deposition apparatus according to an embodiment of the present invention.
5 is a view showing the structure of a satellite for chemical vapor deposition apparatus according to an embodiment of the present invention.
6A and 6B are cross-sectional views illustrating in detail the satellite structure according to the embodiment of the present invention shown in FIG. 5.
7 is a view showing the structure of a satellite for chemical vapor deposition apparatus according to another embodiment of the present invention.
8A and 8B are cross-sectional views illustrating in detail the satellite structure according to another exemplary embodiment of the present invention illustrated in FIG. 7.
9 is a view showing the structure of a satellite for chemical vapor deposition apparatus according to another embodiment of the present invention.
10A and 10B are cross-sectional views illustrating in detail the satellite structure according to another exemplary embodiment of the present invention illustrated in FIG. 9.
11 is a view showing the structure of a satellite for chemical vapor deposition apparatus according to another embodiment of the present invention.
12A and 12B are cross-sectional views illustrating in detail the satellite structure according to another exemplary embodiment of the present invention illustrated in FIG. 11.
13 is a cross-sectional view showing in detail the satellite structure according to another embodiment of the present invention.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

Although the satellite structure of the chemical vapor deposition apparatus according to the present invention will be described mainly, the satellite structure of the present invention described below may be applied to any type of chemical vapor deposition apparatus.

4 is a view schematically showing a chemical vapor deposition apparatus according to an embodiment of the present invention.

Chemical vapor deposition apparatus according to an embodiment of the present invention is a chamber 110 to form a predetermined vacuum space to be deposited, and the satellite 120 is provided inside the chamber 110 to accommodate the substrate 130 It includes a susceptor 125 having a, and an RF coil 140 provided adjacent to the lower portion of the susceptor 120.

The side of the chamber 110 is provided with a gas introduction portion 111 for introducing a source gas for forming a thin film, the source gas introduced through the gas introduction portion 111 in the center of the chamber 110 is the chamber 110 The gas exhaust port 112 is provided to be discharged while flowing inside.

The gas introduction part 111 is a passage through which a reaction gas supplied from a predetermined reaction gas supply source (not shown) provided outside is introduced into the chamber 110 and may be implemented in the form of an injection nozzle or the like.

The substrate 130 placed on the satellite 120 is exposed to the source gas flowing in and flowing through the gas introduction unit 111, and heat is applied to the substrate 130 by induction heating in the RF coil 140. The thin film is grown on the substrate 130 by the chemical reaction.

The susceptor 120 may be provided to rotate as a device for receiving the substrate 130 or may be fixed. The susceptor 120 is provided with at least one satellite 150, and the satellite 150 is accommodated in the pocket 121 provided in the susceptor 120 to accommodate the substrate 130, which is a deposition target. In this case, the satellite 150 may be provided to be rotatable.

Next, the satellite for chemical vapor deposition apparatus according to the present invention will be described in detail with reference to FIGS. 5 to 13.

5 is a view showing the structure of a satellite for chemical vapor deposition apparatus according to an embodiment of the present invention, Figures 6a and 6b are sectional views shown to specifically explain the structure of the satellite of the present invention. In particular, FIG. 5A illustrates an initial state in which a substrate is seated on a satellite, and FIG. 5B illustrates a state in which warping of the substrate occurs after deposition is performed.

The satellite 150 according to an embodiment of the present invention includes a mounting portion 151 and a stepped portion 152 on which the substrate 130 is substantially mounted.

The seating portion 151 is provided along the circumference of the satellite 150 to form a step from the top of the satellite 150 to the bottom thereof so that the substrate 130 may be seated.

The stepped portion 152 is formed to have a predetermined depth and diameter downward from the seating portion 151. The diameter D and the depth of the stepped portion 152 may be set in consideration of the size of the substrate 130 accommodated in the satellite, the degree of warpage of the substrate in the deposition process, and the like. In the present exemplary embodiment, even when the satellite is heated to warp the substrate 130 as shown in FIG. 6B, the stepped portion 152 is disposed so that the central portion of the substrate 130 does not touch the surface of the stepped portion 152. Diameter (D) was set to about 40-50 mm from the center of a satellite.

For the chemical vapor deposition process, when the substrate 130 to be deposited is seated on the seating portion 151 of the satellite 150, the satellite is installed by a heater or an RF coil (140 in FIG. 4) installed at the lower part of the susceptor. Is heated to the process temperature, the reaction gas is introduced into the chamber through the gas introducing unit 111, and the deposition is performed by the chemical reaction of the reaction gas.

As the deposition proceeds, a warp phenomenon occurs in which the edge of the substrate 130 is bent upward by high heat, as shown in FIG. 6B. Even if the substrate 130 is warped in this way, since the stepped portion 152 having a predetermined depth is formed at the center of the satellite 150, the distance between the edge surface of the substrate 130 and the surface of the satellite is the same. . Therefore, the heat applied to the edges and the center of the substrate 130 is uniform, so that the temperature of the substrate 30 is uniform, and as a result, the growth of the thin film is uniform throughout the substrate.

Figure 7 is a view showing the structure of a satellite for chemical vapor deposition apparatus according to another embodiment of the present invention, Figure 8a is a cross-sectional view showing an initial state of the substrate is seated on the satellite, Figure 8b is a substrate proceeds deposition It is sectional drawing which shows the state which the curvature of generate | occur | produced.

The satellite 160 according to another embodiment of the present invention includes a seating portion 161 and a stepped portion 162 similar to the satellite structure shown in FIG. 6A. However, compared with the satellite 150 of FIG. 6A, the diameter of the stepped portion 162 is increased and the seating portion 161 occupies only a certain distance along the circumference of the satellite.

The length of the seating portion 161 and the size (diameter) of the stepped portion 162 vary depending on the size of the substrate and the degree of warpage of the substrate. As shown in FIG. 8B, when the warpage of the substrate occurs, the edge of the substrate 130 may be set to be in contact with the seating portion 161 when the warpage of the substrate appears in the chemical vapor deposition process. have.

If the chemical vapor deposition process is performed after the substrate 130 is seated on the satellite 160 having such a structure, the edge of the substrate 130 is bent upward due to high heat as the process proceeds. However, the mounting portion 161 and the stepped portion 162 adjusted to an appropriate size, as shown in FIG. 8B, cause the substrate 130 to come into contact with the edge of the mounting portion 161 to be transferred to the center and the edge of the substrate. The heat is about the same. Therefore, the temperature of the substrate 130 is uniform throughout, and as a result, the growth of the thin film is uniform.

9 is a view showing a satellite for a chemical vapor deposition apparatus according to another embodiment of the present invention, Figure 10a is a cross-sectional view showing an initial state of the substrate seated on the satellite, Figure 10b is a substrate of the substrate after the deposition proceeds It is sectional drawing which shows the state which warpage generate | occur | produced.

The satellite 170 of another embodiment of the present invention includes at least one groove 171 disposed concentrically in the center. The size and number of grooves 171 can be adjusted according to the size and the degree of warpage of the substrate.

When the plurality of grooves 171 are provided at the center of the satellite 170, an effect similar to that of the satellite of the embodiment illustrated in FIG. 6B may be obtained. That is, when the chemical vapor deposition process proceeds to warp the substrate 130 due to the high temperature, the temperature difference between the center and the edge of the substrate due to the groove 171 provided in the center of the satellite 170 is in contact with the center of the substrate 130 Will be reduced. Thus, a uniform thin film is deposited throughout the substrate.

11 is a view showing a satellite for a chemical vapor deposition apparatus according to another embodiment of the present invention, Figure 12a is a cross-sectional view showing an initial state of the substrate seated on the satellite, Figure 12b is a substrate of the substrate after the deposition proceeds It is sectional drawing which shows the state which warpage generate | occur | produced.

The top surface 1181 of the satellite 180 according to another embodiment of the present invention is a flat structure as a whole so that the substrate 130 is seated, the bottom surface 182 is a central portion in which the satellite 180 is placed on the susceptor Except for 183, the thickness is inclined from the edge of the satellite toward the center. The inclination of the lower surface 182 with respect to the upper surface 181 of the satellite may be set in consideration of the thickness of the substrate accommodated in the satellite 180.

For the chemical vapor deposition process, when the substrate 130 to be deposited is seated on the upper surface 181 of the satellite 180, the satellite is formed by a heater or an RF coil (140 in FIG. 4) installed below the susceptor. Heated to the process temperature, the reaction gas is introduced into the chamber through the gas introducing unit 111 is deposited by the chemical reaction of the reaction gas.

In this process, as shown in FIG. 8B due to high heat, a bending phenomenon in which the edge of the substrate 130 is bent upward occurs. Since the lower surface of the satellite 180 is inclined to become thinner toward the center, the center of the satellite 180 has a larger distance from the heating means such as a heater than the edge. Therefore, even if the warpage of the substrate 130 occurs, the heat received from the edge and the center of the substrate 130 is almost the same, so that the temperature of the substrate is uniform, and as a result, the growth of the thin film is uniform throughout the substrate.

Meanwhile, the satellite structure according to the embodiment of the present invention may be used alone, but may combine two or more structures with each other to give a better effect.

13 is a view showing the structure of a satellite for chemical vapor deposition apparatus according to another embodiment of the present invention, a cross-sectional view showing a state that the warpage of the substrate occurs after the deposition proceeds.

Referring to FIG. 13, the satellite illustrated in FIGS. 8A and 8B and the satellite illustrated in FIGS. 10A and 10B are combined. Along the periphery of the satellite 190, a seating portion 191 is provided to allow the substrate to be seated while making a step downward from the top of the satellite, and a stepped portion 192 having a predetermined depth downward from the seating portion 191. ) Is provided, and at least one groove 193 is formed in the center of the satellite.

The length of the seating portion 191 and the stepped portion 192 formed along the circumference of the satellite is set such that the edge of the substrate may contact the satellite when the bending of the substrate occurs. The number can be adjusted according to the size and the degree of warpage of the substrate.

If the chemical vapor deposition process is performed after the substrate 130 is seated on the satellite 190 having such a structure, the edge of the substrate 130 is bent upward due to high heat. However, the temperature difference between the center and the edge of the substrate 130 is reduced due to the stepped portion 192 and the groove 193 provided at the center of the satellite as formed in the proper size as shown. Thus, a uniform thin film is deposited throughout the substrate.

According to the satellite of the present invention and the chemical vapor deposition apparatus including the same, the center and the edges of the substrate are changed even when the substrate is warped in a high temperature chemical vapor deposition process by changing the structure of the satellite housing the substrate. The temperature can be made uniform. Thus, a uniform thin film is deposited throughout the substrate.

While the invention has been described in connection with what is presently considered to be the most practical and preferred embodiment, it is to be understood that the invention is not limited to the disclosed embodiments. Such changes and modifications are intended to fall within the scope of the present invention unless they depart from the scope of the present invention. Accordingly, the scope of the present invention should be determined by the following claims.

10, 100 ..... Chamber 11, 111 ..... Gas Inlet
12, 112 ... gas exhaust 20, 120 ... susceptor
30, 130 ..... Substrate 40, 140 ..... RF Coil
25, 150, 160, 170, 180, 190 ..... Satellite

Claims (16)

A pocket mounted on the susceptor and containing a substrate to be deposited therein;
A seating part provided with a stepped downward from an upper end of the pocket to place a substrate; And
Satellite for chemical vapor deposition apparatus comprising a stepped portion formed to a predetermined depth from the seating portion. The method of claim 1,
The stepped portion,
When the substrate warpage occurs during the chemical vapor deposition process, the satellite for a chemical vapor deposition apparatus, characterized in that formed to a diameter such that the center of the substrate does not contact. The method of claim 2,
The stepped portion, the satellite for chemical vapor deposition apparatus, characterized in that the diameter ranges from 40 to 50mm. The method of claim 1,
The stepped portion,
When the warpage of the substrate occurs during the chemical vapor deposition process, a satellite for a chemical vapor deposition apparatus, characterized in that the size is provided so that a portion of the edge of the substrate can be contacted. 5. The method of claim 4,
Satellite for chemical vapor deposition apparatus further comprises at least one groove concentrically provided in the center of the stepped portion. A pocket mounted on the susceptor and containing a substrate to be deposited therein;
A seating part provided with a stepped downward from an upper end of the pocket to place a substrate; And
Satellite for chemical vapor deposition apparatus comprising at least one groove formed in the center of the seating portion. The method according to claim 6,
Further comprising a stepped portion formed inside the seating portion, a predetermined depth downward,
Wherein the groove is a satellite for chemical vapor deposition apparatus, characterized in that formed in the center of the stepped portion. A pocket mounted on the susceptor and containing a substrate to be deposited therein; And
It comprises a seating portion provided so that the substrate is placed in a step downward from the top of the pocket, the seating portion,
A top surface thereof is flat, and a bottom surface thereof is inclined so that its thickness becomes thinner from the edge toward the center, and the satellite for chemical vapor deposition apparatus is characterized in that it is. A chamber providing a space in which the deposition takes place;
A susceptor installed in the chamber and having at least one pocket;
Heating means provided adjacent to the susceptor and heating the substrate; And
It is provided in the pocket of the susceptor, and has a pocket for receiving a substrate therein, a seating portion is provided so that the substrate is placed in a step from the top of the pocket downward, and a stepped portion formed to a predetermined depth from the seating portion Chemical vapor deposition apparatus comprising a satellite. 10. The method of claim 9,
The stepped portion,
The chemical vapor deposition apparatus, characterized in that formed in the diameter so that when the bending of the substrate during the chemical vapor deposition process, the central portion of the substrate does not contact. The method of claim 10,
The stepped portion, the satellite for chemical vapor deposition apparatus, characterized in that the diameter ranges from 40 to 50mm. 10. The method of claim 9,
The stepped portion,
When the warpage of the substrate occurs during the chemical vapor deposition process, a satellite for a chemical vapor deposition apparatus, characterized in that the size is provided so that a portion of the edge of the substrate can be contacted. The method of claim 12,
Satellite for chemical vapor deposition apparatus further comprises at least one groove concentrically provided in the center of the stepped portion. A chamber providing a space in which the deposition takes place;
A susceptor installed in the chamber and having at least one pocket;
Heating means provided adjacent to the susceptor and heating the substrate; And
A pocket mounted on the susceptor and accommodating a substrate to be deposited therein, a seating portion formed to form a step from the top of the pocket downward, and at least one groove formed at the center of the seating portion; Chemical vapor deposition apparatus comprising a sacrite having. 15. The method of claim 14,
Further comprising a stepped portion formed inside the seating portion, a predetermined depth downward,
The grooves are chemical vapor deposition apparatus, characterized in that formed in the center of the stepped portion. A chamber providing a space in which the deposition takes place;
A susceptor installed in the chamber and having at least one pocket;
Heating means provided adjacent to the susceptor and heating the substrate; And
A pocket mounted on the susceptor to accommodate a substrate to be deposited therein; and a seating portion arranged to form a step downward from an upper end of the pocket, the seating portion having a flat upper surface thereof; The lower surface of the chemical vapor deposition apparatus comprising a satellite inclined so as to become thinner toward the center from the edge.
KR1020110063195A 2011-06-28 2011-06-28 Satellite for chemical mechanical deposition apparatus and apparatus for chemical mechanical deposition having the same KR20130007066A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101477142B1 (en) * 2013-09-13 2014-12-29 (주)티티에스 Substrate supporting unit and Substrate supporting apparatus having the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101477142B1 (en) * 2013-09-13 2014-12-29 (주)티티에스 Substrate supporting unit and Substrate supporting apparatus having the same

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