KR20130006839A - Apparatus and method for removing defect - Google Patents

Apparatus and method for removing defect Download PDF

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Publication number
KR20130006839A
KR20130006839A KR1020110061630A KR20110061630A KR20130006839A KR 20130006839 A KR20130006839 A KR 20130006839A KR 1020110061630 A KR1020110061630 A KR 1020110061630A KR 20110061630 A KR20110061630 A KR 20110061630A KR 20130006839 A KR20130006839 A KR 20130006839A
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KR
South Korea
Prior art keywords
substrate
defect
voltage
film
unit
Prior art date
Application number
KR1020110061630A
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Korean (ko)
Inventor
황민영
김무성
Original Assignee
엘지이노텍 주식회사
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Publication date
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR1020110061630A priority Critical patent/KR20130006839A/en
Priority to US14/128,372 priority patent/US9202764B2/en
Priority to PCT/KR2012/004664 priority patent/WO2012177013A2/en
Publication of KR20130006839A publication Critical patent/KR20130006839A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

Defect removal apparatus according to an embodiment, the image portion that can observe the surface of the substrate; A film forming unit capable of forming a film on the surface of the substrate; And the substrate is located in the chamber, and includes a humidity control unit for controlling the humidity in the chamber.
Defect removal method according to the embodiment, the step of finding a defect on the substrate surface; Oxidizing the defect to form an oxide film; And removing the oxide film.

Description

Fault-tolerant device and fault-tolerance method {APPARATUS AND METHOD FOR REMOVING DEFECT}

The present disclosure relates to a defect removal apparatus and a defect removal method.

Various types of defects exist on the surfaces of silicon carbide wafers and epitaxial wafers. These defects increase the surface roughness of the silicon carbide wafer, which has a lot of adverse effects during the next process. Surface defects on the silicon carbide wafer cause another defect upon single crystal film growth, resulting in a rough surface. Surface defects on epitaxial wafers can cause partial interruptions when stacked several. Further, in fabricating an element using such a wafer, leakage current due to metal electrode deposition and pattern nonuniformity can be increased.

For this reason, the lifetime of an element can be shortened and the reliability of an element can fall. Therefore, such defect removal and defect control are very important issues in manufacturing high quality devices.

Embodiments provide an apparatus and method for removing defects through oxidation.

Defect removal apparatus according to an embodiment, the image portion that can observe the surface of the substrate; A film forming unit capable of forming a film on the surface of the substrate; And the substrate is located in the chamber, and includes a humidity control unit for controlling the humidity in the chamber.

Defect removal method according to the embodiment, the step of finding a defect on the substrate surface; Oxidizing the defect to form an oxide film; And removing the oxide film.

The defect removal apparatus according to the embodiment includes an atomic force microscope (AFM), through which AFM can locally remove defects present on the substrate surface. That is, the defect can be oxidized using the AFM, and the oxidized defect can be easily removed. Therefore, the roughness of the surface of the substrate can be improved, and a high quality substrate with defects removed can be provided. In addition, the performance of the device to which such a substrate is applied can be improved.

The defect removal method according to the embodiment provides a defect removal method having the above-described effect.

1 is a schematic diagram of a defect removal apparatus according to an embodiment.
2 is a process flow diagram of a defect removal method according to an embodiment.
3 is a schematic diagram illustrating a defect removal method according to an embodiment.
4 is a schematic view for explaining the basic principle of the defect removal method according to the embodiment.
5 to 7 are cross-sectional views illustrating a method for removing a defect according to an embodiment.

In the description of embodiments, each layer, region, pattern, or structure may be “on” or “under” the substrate, each layer, region, pad, or pattern. Substrate formed in ”includes all formed directly or through another layer. Criteria for the top / bottom or bottom / bottom of each layer will be described with reference to the drawings.

The thickness or the size of each layer (film), region, pattern or structure in the drawings may be modified for clarity and convenience of explanation, and thus does not entirely reflect the actual size.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

First, a defect removal apparatus according to an embodiment will be described in detail with reference to FIG. 1. 1 is a schematic diagram of a defect removal apparatus according to an embodiment.

Referring to FIG. 1, a defect removal apparatus according to an embodiment may include an imaging unit 100, a film forming unit 200, a stage 500, a humidity control unit 300, a control unit 400, and a chamber 600. Include.

The imaging unit 100 may observe the surface of the substrate 10 located in the chamber 600. The imaging unit 100 may further include a lens 110 to observe the surface of the substrate 10.

The imaging unit 100 may image the surface of the substrate 10. The imaging unit 100 may include an image sensor including a charge-coupled device (CCD).

The distribution of the defect 12 existing on the surface of the substrate 10 may be confirmed through the image part 100.

The imaging unit 100 may image the surface of the substrate 10 and coordinate all ranges of the image. Therefore, the position of the said defect 12 can be grasped correctly. In addition, the defect 12 may be locally removed through the imaging unit 100.

The film forming unit 200 may form a film on the surface of the substrate 10. Specifically, the film forming unit 200 may form a film on a portion of the surface. More specifically, the protrusion may be located on the surface of the substrate 10, and the film forming part 200 may locally form a film on the protrusion. In this case, the protrusion may be a defect 12. That is, the protrusion may include a defect 12 present on the surface of the substrate 10.

The film forming unit 200 may form a film on the protrusion in consideration of the thickness and height of the defect 12 found through the image unit 100.

The film forming unit 200 may include a voltage applying unit for applying a voltage to the substrate 10. The voltage applying unit may form a voltage between the surface of the substrate 10 and the protrusion.

The voltage applying unit may include a probe unit 210 and a power supply unit 220.

The probe unit 210 may be located on the substrate 10.

The probe unit 210 may include an atomic force microscope (AFM).

In general, AFM is a device capable of obtaining an atomic level three-dimensional surface image and is used to shape the surface of the substrate 10 without damaging the substrate 10. The AFM uses nanoscale interaction between the surface of the substrate 10 and the probe (including all magnetic poles generated by various energy sources such as electric and magnetic stimuli) to nanoscale the surface structure of the substrate 10. I can figure it out.

An important application of AFM is nano lithography, in which the surface of the substrate 10 is deformed by applying an appropriate signal between the probe 210 and the surface of the substrate 10. An ultrafine pattern can be formed on the substrate 10 as a technique for manipulating atoms or molecules on the surface of the substrate 10 by applying force (electric and magnetic stimulation, etc.). In the lithography using the AFM as described above, the substrate 10 or the substrate 10 placed on the stage 500 is moved relative to the probe 210 by applying the stage 500 driving voltage, or the AFM probe 210 is applied. Is moved relative to the substrate 10. Meanwhile, when the lithography voltage is applied while the probe 210 moves relatively on the substrate 10 or the AFM probe 210 moves relative to the substrate 10, the probe 210 and the substrate ( 10) An electric field or magnetic field is generated between the surfaces to apply a force (electrical and magnetic stimulus, etc.) to the surface of the substrate 10 in a contact or non-contact manner, resulting in a physical / chemical change The pattern 20 is formed by deforming.

The power supply unit 220 may apply a voltage to the probe unit 210 and the substrate 10. In detail, the power supply unit 220 may apply a voltage between the probe unit 210 and the stage 500 supporting the substrate 10.

The oxide film 14 may be formed on the protrusion by using the voltage applying unit.

The stage 500 may be located in the chamber 600. The stage 500 may support the substrate 10. Voltage may be applied to the stage 500.

Subsequently, the humidity control unit 300 may adjust the humidity in the chamber 600 in which the substrate 10 is accommodated. The humidity control unit 300 may maintain the humidity in the chamber 600 to about 40% to 90%.

The chamber 600 may accommodate the substrate 10.

The controller 400 may control the image unit 100, the film forming unit 200, and the humidity control unit 300. Through this, the inside of the chamber 600 can be made into an optimized environment for forming the oxide film 14.

The defect 12 may be locally removed through the defect removal apparatus according to the embodiment. That is, the defect 12 can be oxidized using the AFM, and the oxidized defect 12 can be easily removed. Therefore, the roughness of the surface of the board | substrate 10 can be improved and the high quality board | substrate 10 from which the defect 12 was removed can be provided. In addition, the performance of the device to which the substrate 10 is applied can be improved.

2 to 7, a defect removal method according to an embodiment will be described. For the sake of clarity and simplicity, detailed descriptions of what has already been described are omitted.

2 is a process flow diagram of a defect removal method according to an embodiment. 3 is a schematic diagram illustrating a defect removal method according to an embodiment. 4 is a schematic view for explaining the basic principle of the defect removal method according to the embodiment. 5 to 7 are cross-sectional views illustrating a method for removing a defect according to an embodiment.

Referring to FIG. 2, the method for removing defects according to the embodiment includes finding a defect (ST100), forming an oxide film (ST200), and removing the oxide film (ST300).

In the finding of the defect ST100, the defect 12 located on the surface of the substrate 10 may be found. Finding the defect ST100 may use an image sensor including a charge coupled device (CCD).

3 and 5, a defect 12 having a protruding shape may exist on the surface of the substrate 10.

In forming the oxide layer (ST200), the defect 12 may be oxidized. Specifically, referring to FIGS. 3 and 4, the defect 12 may be oxidized by applying a voltage between the probe 210 and the substrate 10 positioned on the defect 12.

A voltage of 6 V to 14 V may be applied between the probe unit 210 and the substrate 10. In this embodiment, since only the portion where the defect 12 is located on the surface of the substrate 10 is locally oxidized, no large voltage is required.

However, the embodiment is not limited thereto, and a voltage of 2 V to 25 V may be applied between the probe unit 210 and the substrate 10 to form an oxide film on the entire surface of the substrate 10. have.

The oxide layer 14 may be formed by applying various voltages according to the distribution of the defect 12 and the shape of the defect 12 present in the substrate 10.

The forming of the oxide layer (ST200) may include maintaining a humidity of 40% to 90%. By maintaining a high humidity in the step of forming the oxide film (ST200), the surface of the substrate 10 may be covered with a thin film to form a film. That is, a thin water film W may be formed on the surface of the substrate 10. The water film W may later be a reaction source for forming the oxide film 14 on the defect 12.

In addition, by maintaining a high humidity in the step (ST200) of forming the oxide film, it is possible to maintain the shape of the oxide film 14 formed.

When the voltage is increased between the probe unit 210 and the substrate 10, the electric field of the portion where the surface of the substrate 10 and the end of the probe unit 210 is increased. At this time, when the electric field is increased, the tunneling of the anion (OH-) between the probe unit 210 and the substrate 10 is increased, and the following chemical reaction is accelerated.

Chemical reaction in the probe unit 210 in the state of the electric field is as shown in the following formula (1).

Formula 1

4H 2 O + 4e - → 2H 2 + 4OH -

Chemical reactions on the surface of the substrate 10 in the state in which the electric field is applied are represented by the following Chemical Formulas 2 and 3.

(2)

Si + 2H 2 O + 4h + → SiO 2 + 4H +

(3)

2H 2 O + 4h + → O 2 + 4H +

As a result of the chain reaction of Chemical Formulas 1 to 3, H 2 O is produced as shown in Chemical Formula 4 below.

Formula 4

4H + + 4OH - → 2H 2 O

Through the Chemical Formulas 1 to 4, the oxide layer 14 may be formed on the defect 12. As shown in FIG. 6, not only an oxide film 14 may be formed on the surface of the defect 12, but also the inside of the defect 12 may be oxidized. Tunneled anions (OH − ) also make the chemical reaction more active, resulting in higher oxidation patterns.

Subsequently, referring to FIG. 7, the step of removing the oxide film (ST300) may be performed. Removing the oxide layer (ST300) may include dipping the substrate 10 in a hydrofluoric acid (HF) solution. Through this, the oxide layer 14 may be removed to remove the defect 12. Therefore, the quality of the board | substrate 10 can be improved and the surface roughness of the board | substrate 10 can be improved. In addition, the performance of the device to which the substrate 10 is applied can be improved.

The features, structures, effects and the like described in the foregoing embodiments are included in at least one embodiment of the present invention and are not necessarily limited to one embodiment. In addition, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be construed as limiting the scope of the present invention. It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments may be modified. It is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or essential characteristics thereof.

Claims (17)

An imaging unit for observing the surface of the substrate;
A film forming unit capable of forming a film on the surface of the substrate; And
The substrate is located within the chamber, the defect removal apparatus including a humidity control unit for adjusting the humidity in the chamber. The method of claim 1,
And the film forming part can form a film on a part of the surface. The method of claim 1,
Protrusions may be located on the surface of the substrate,
And the film forming portion can form a film on the protrusion. The method of claim 3,
And the protrusion includes a defect. The method of claim 1,
And the film forming part includes a voltage applying part capable of applying a voltage to the substrate. The method of claim 5,
And the voltage applying unit can form a voltage between the surface of the substrate and the protrusion. The method of claim 5,
The voltage application unit may include a probe unit positioned on the substrate; And
And a power supply unit applying a voltage to the probe unit and the substrate. The method of claim 7, wherein
The probe unit comprises a atomic force microscope (Atomic Force Microscope, AFM). The method of claim 1,
And the imaging unit comprises an image sensor including a charge-coupled device (CCD). Finding defects on the substrate surface;
Oxidizing the defect to form an oxide film; And
Removing the oxide film. The method of claim 10,
The probe may be located on the defect,
The forming of the oxide film may include applying a voltage between the substrate and the probe. The method of claim 11,
Wherein said probe comprises an atomic force microscope (AFM). The method of claim 11,
And the voltage is applied from 2V to 25V. The method of claim 11,
And removing the voltage from 6 V to 14 V. The method of claim 10,
Forming the oxide film comprises the step of maintaining a humidity of 40% to 90%. The method of claim 10,
And removing the oxide layer comprises dipping the substrate into a hydrofluoric acid (HF) solution. The method of claim 10,
The step of finding the defect using a image sensor comprising a charge-coupled device (CCD).
KR1020110061630A 2011-06-20 2011-06-24 Apparatus and method for removing defect KR20130006839A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020110061630A KR20130006839A (en) 2011-06-24 2011-06-24 Apparatus and method for removing defect
US14/128,372 US9202764B2 (en) 2011-06-20 2012-06-13 Apparatus and method for removing defect
PCT/KR2012/004664 WO2012177013A2 (en) 2011-06-20 2012-06-13 Apparatus and method for removing defect

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020110061630A KR20130006839A (en) 2011-06-24 2011-06-24 Apparatus and method for removing defect

Publications (1)

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KR20130006839A true KR20130006839A (en) 2013-01-18

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KR1020110061630A KR20130006839A (en) 2011-06-20 2011-06-24 Apparatus and method for removing defect

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