CN113138294B - Method for regulating and controlling concentration of two-dimensional electron gas - Google Patents
Method for regulating and controlling concentration of two-dimensional electron gas Download PDFInfo
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- CN113138294B CN113138294B CN202010066528.4A CN202010066528A CN113138294B CN 113138294 B CN113138294 B CN 113138294B CN 202010066528 A CN202010066528 A CN 202010066528A CN 113138294 B CN113138294 B CN 113138294B
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- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
- G01Q60/24—AFM [Atomic Force Microscopy] or apparatus therefor, e.g. AFM probes
- G01Q60/30—Scanning potential microscopy
Abstract
The invention relates to a method for regulating and controlling the concentration of two-dimensional electron gas, which comprises the following steps: s1, applying a first positive voltage to a first region on the surface of the two-dimensional electron gas material by using an atomic force microscope to ensure that charges of the two-dimensional electron gas just opposite to the first region are depleted; and S2, applying a second positive voltage to a second region on the surface of the two-dimensional electron gas material by using the atomic force microscope to ensure that the two-dimensional electron gas charges opposite to the second region are exhausted, wherein the first region and the second region are in parallel. The regulating method applies positive voltage or negative voltage to the two-dimensional electron gas material through the atomic force microscope, realizes the charge exhaustion or charge injection of the two-dimensional electron gas material, thereby realizing the change of the two-dimensional electron gas concentration, and the changed two-dimensional electron gas concentration can be restored and programmed, achieving the purpose of controlling the crystal structure or the electron concentration at the material interface, and being beneficial to quickly preparing small-size devices.
Description
Technical Field
The invention belongs to the technical field of microelectronics, and particularly relates to a method for regulating and controlling the concentration of two-dimensional electron gas.
Background
In recent years, the size of electronic devices has been gradually reduced, and the density of transistors has been increasing year by year following moore's law. As the size of electronic devices changes, the device characteristics also change, and thus how to obtain small-sized devices with good device performance has attracted much attention.
The conventional method for obtaining small-sized devices is electron beam lithography, which is a microfabrication technique in which an electron beam of low power density is irradiated onto an electro-resist, which is developed to produce a pattern in the resist.
However, when the electron beam lithography method is used for manufacturing small-sized devices, steps such as whirl coating, electron beam exposure, development, fixation, film coating, photoresist removal, SEM observation and the like need to be performed on a substrate, the manufacturing process is complex, the time consumption is long, the small-sized devices cannot be obtained quickly, the electron beam lithography method cannot control the crystal structure or the electron concentration at the material interface, the change of the two-dimensional electron gas concentration cannot be realized, and the difficulty in manufacturing the small-sized devices is increased.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a method for regulating and controlling the concentration of two-dimensional electron gas. The technical problem to be solved by the invention is realized by the following technical scheme:
the embodiment of the invention provides a method for regulating and controlling the concentration of two-dimensional electron gas, which comprises the following steps:
s1, applying a first positive voltage to a first region on the surface of the two-dimensional electron gas material by using an atomic force microscope to ensure that charges of the two-dimensional electron gas just opposite to the first region are depleted;
and S2, applying a second positive voltage to a second region on the surface of the two-dimensional electron gas material by using the atomic force microscope to ensure that the two-dimensional electron gas charges opposite to the second region are exhausted, wherein the first region and the second region are in parallel.
In one embodiment of the present invention, step S1 includes:
s11, setting the atomic force microscope into a conductive mode, installing a conductive probe in the atomic force microscope and adjusting the contact position of the conductive probe and the surface of the two-dimensional electron gas material;
and S12, applying a first positive voltage to the first region under a first parameter by using the conductive probe, so that the two-dimensional electron gas charges opposite to the first region are exhausted.
In one embodiment of the invention, the first parameter comprises: the scanning width range is 0-100 μm, the scanning length-width ratio is an integer larger than or equal to 1, the number of points is an integer larger than or equal to 2, the number of lines is an integer larger than or equal to 2, and the sample direct current bias voltage is 0-10 v.
In one embodiment of the present invention, step S2 includes:
and shifting the conductive probe by 0-25 μm along the target direction, and applying a second positive voltage to the second region under a second parameter to exhaust the two-dimensional electron gas charges just opposite to the second region.
In an embodiment of the present invention, step S2 is followed by:
and S3, applying a preset positive voltage to a plurality of areas of the surface of the two-dimensional electron gas material, which are parallel to the first area, so that the two-dimensional electron gas charge facing each area in the plurality of areas is exhausted.
Another embodiment of the present invention provides a method for regulating and controlling a concentration of a two-dimensional electron gas, including the steps of:
s1, setting the atomic force microscope into a conductive mode, installing a conductive probe in the atomic force microscope and adjusting the contact position of the conductive probe and the surface of the two-dimensional electron gas material;
and S2, applying the preset negative voltage to the surface of the two-dimensional electron gas material under preset parameters by using the conductive probe so as to inject charges into the two-dimensional electron gas material.
In one embodiment of the present invention, the preset parameters include: the scanning width range is 0-100 μm, the scanning length-width ratio is an integer larger than or equal to 1, the number of points is an integer larger than or equal to 2, the number of lines is an integer larger than or equal to 2, and the sample direct current bias voltage is-10-0 v.
In one embodiment of the present invention, further comprising the steps of:
and applying the preset negative voltage to the surface of the two-dimensional electron gas material for multiple times by adopting the atomic force microscope so as to inject charges into the two-dimensional electron gas material.
Compared with the prior art, the invention has the beneficial effects that:
1. according to the invention, the atomic force microscope is used for applying positive voltage or negative voltage to the two-dimensional electron gas material, so that the charge exhaustion or charge injection of the two-dimensional electron gas material is realized, the change of the two-dimensional electron gas concentration is realized, the changed two-dimensional electron gas concentration can be restored and programmed, the purpose of controlling the crystal structure or the electron concentration at the material interface is achieved, and the small-size device can be prepared quickly.
2. According to the invention, the atomic force microscope is used for injecting charges or exhausting charges into the two-dimensional electron gas material in situ, the preparation process is simple, the consumed time is short, the small-size device can be rapidly obtained, and the preparation and research of the small-size device are facilitated.
Drawings
Fig. 1 is a schematic flow chart of a method for regulating and controlling a concentration of a two-dimensional electron gas according to an embodiment of the present invention;
fig. 2a to fig. 2d are schematic process diagrams of a method for regulating and controlling a two-dimensional electron gas concentration according to an embodiment of the present invention;
3 a-3 d are cross-sectional views illustrating a two-dimensional electron gas concentration control process according to an embodiment of the present invention;
fig. 4a to fig. 4c are schematic flow charts of another two-dimensional electron gas concentration regulation method according to an embodiment of the present invention;
fig. 5a to fig. 5c are cross-sectional views illustrating another two-dimensional electron gas concentration regulating process according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
Example one
Referring to fig. 1, fig. 2a to fig. 2d, and fig. 3a to fig. 3d, fig. 1 is a schematic flow chart of a two-dimensional electron gas concentration regulation method according to an embodiment of the present invention, fig. 2a to fig. 2d are schematic process diagrams of a two-dimensional electron gas concentration regulation method according to an embodiment of the present invention, and fig. 3a to fig. 3d are cross-sectional views of a two-dimensional electron gas concentration regulation process according to an embodiment of the present invention.
The method for regulating and controlling the concentration of the two-dimensional electron gas comprises the following steps:
and S1, applying a first positive voltage to a first region on the surface of the two-dimensional electron gas material by using an atomic force microscope to ensure that the charges of the two-dimensional electron gas directly opposite to the first region are depleted. The method specifically comprises the following steps:
and S11, setting the atomic force microscope into a conductive mode, installing a conductive probe in the atomic force microscope, and adjusting the contact position of the conductive probe and the surface of the two-dimensional electron gas material.
An Atomic Force Microscope (AFM) is an analytical instrument that can be used to study the surface structure of solid materials including insulators, and can measure the electrical properties of the surface of two-dimensional electron gas materials in a conductive mode.
In this embodiment, the Two-dimensional electron gas material may be a ferroelectric layer/AlGaN/GaN HEMT material, which includes a GaN channel layer 1, an AlGaN barrier layer 2, and a ferroelectric layer 3 disposed from bottom to top, where a Two-dimensional electron gas (2 DEG) is generated at an interface between the AlGaN barrier layer 2 and the GaN channel layer 1. The ferroelectric layer/AlGaN/GaN HEMT material is a charge nonvolatile material, and when the concentration of two-dimensional electron gas is regulated, the domain polarization in the ferroelectric layer is stable, so that the charge can be kept for dozens of hours, and the regulation of the concentration of the two-dimensional electron gas is facilitated. Further, the ferroelectric layer may be selected from lead zirconate titanate (PbZr)0.2Ti0.8O3PZT for short) also other ferroelectric materials can be selected, for example: barium titanate BaTiO3Lead titanate PbTiO3。
Specifically, the AFM is first set to the conducting mode; then installing a conductive probe SCM-PIT, and adjusting laser to enable laser spots to be printed at the front end of the cantilever; then, placing a two-dimensional electron gas material, and adjusting the position of a lens of the optical microscope to enable the lens to respectively and clearly see the probe and the sample from top to bottom; finally, the contact position of the conductive probe SCM-PIT and the ferroelectric layer 3 is adjusted to complete the needle insertion, please refer to fig. 2a and fig. 3 a.
And S12, applying a first positive voltage to the first region under a first parameter by using the conductive probe, so that the two-dimensional electron gas charges opposite to the first region are exhausted.
Specifically, after the needle insertion, a first parameter is set: the scanning width range is 0-100 mu m, the scanning length-width ratio is an integer larger than or equal to 1, the number of points is an integer larger than or equal to 2, and the number of lines is an integer larger than or equal to 2 (the minimum scanning width of the instrument is two small lines, the width is about 70nm), and the sample direct current bias voltage is 0-10V; and then applying a first positive voltage (i.e. a sample dc bias) to the two-dimensional electron gas material for 10-20 s (see fig. 2b and 3 b), wherein the positive voltage is applied to deplete the two-dimensional electron gas charge facing the first region (see fig. 2c and 3 c), thereby reducing the concentration of the two-dimensional electron gas. Wherein, the shape of the first area includes but is not limited to rectangle, triangle, trapezoid, circle, etc.
And S2, applying a second positive voltage to a second region on the surface of the two-dimensional electron gas material by using the atomic force microscope to ensure that the charges of the two-dimensional electron gas just opposite to the second region are depleted.
Specifically, the conductive probe SCM-PIT is enabled to deviate by 0-25 micrometers along the target direction, the conductive probe SCM-PIT is located in a second area, and then a second parameter is set: the scanning width range is 0-100 mu m, the scanning length-width ratio is an integer larger than or equal to 1, the number of points is an integer larger than or equal to 2, and the number of lines is an integer larger than or equal to 2 (the minimum scanning width of the instrument is two small lines, the width is about 70nm), and the sample direct current bias voltage is 0-10V; then, a second positive voltage (i.e. a sample dc bias voltage) is applied to the two-dimensional electron gas material for 10-20 s, and the applied second positive voltage causes the two-dimensional electron gas charge facing the second region to be depleted, as shown in fig. 2d and fig. 3d, thereby reducing the concentration of the two-dimensional electron gas.
Further, the shape of the second region includes, but is not limited to, rectangle, triangle, trapezoid, circle, etc.; further, the shape of the second region may be controlled by controlling the movement of the conductive probe.
Further, the target direction may be an X axis, a Y axis, or any direction having a certain included angle with the X axis and the Y axis, that is: the SCM-PIT is shifted by 0-25 μm along X, or 0-25 μm along Y, or 0-25 μm along any direction.
Further, the second parameter may or may not coincide with the first parameter. Preferably, the second parameter is consistent with the first parameter, and at this time, the voltage value of the second positive voltage is the same as that of the first positive voltage, so that the two-dimensional electron gas concentration can be uniformly regulated, and the controllability for regulating the two-dimensional electron gas concentration is enhanced, thereby being beneficial to the preparation and research of small-size devices.
The second parameter is identical to the first parameter in terms of the numerical values of the scan width range, the scan aspect ratio, the dot count, the line count, the sample dc bias voltage, and the application time, and the inconsistency is in terms of the numerical values of one or more of the scan width range, the scan aspect ratio, the dot count, the line count, the sample dc bias voltage, and the application time being unequal.
When the charges of the two-dimensional electron gas opposite to the first region are exhausted and the charges of the two-dimensional electron gas opposite to the second region are exhausted, the concentration of the two-dimensional electron gas is reduced, and a conductive channel of the device is formed between the two charge exhausting regions due to the limitation of the barrier height in the two-dimensional electron gas material.
And S3, applying a preset positive voltage to a plurality of areas of the surface of the two-dimensional electron gas material, which are parallel to the first area, so that the two-dimensional electron gas charges opposite to each area in the plurality of areas are exhausted.
Specifically, after the two-dimensional electron gas charges opposite to the second area are exhausted, the SCM-PIT continues to shift by 0-25 microns along the target direction, and then a preset positive voltage is continuously applied to the next area parallel to the first area under the corresponding scanning width range, scanning length-width ratio, point number, line number and sample direct-current bias voltage, so that the two-dimensional electron gas charges opposite to the area are exhausted; and repeating the steps until the concentration of the two-dimensional electron gas meets the requirement.
In a material system with two-dimensional electron gas (such as AlGaN/GaN HEMT), the two-dimensional electron gas concentration has the characteristic of being closely related to the crystal structure of the material, and in the embodiment, by means of a scanning probe technology (such as AFM), the crystal structure or the electron concentration at the material interface can be controlled in situ through a method of in-situ polarization charge, so that the change of the local carrier concentration is realized, and the in-situ preparation of a small-size device is realized. That is to say, in the embodiment, the atomic force microscope AFM is used to characterize the distribution of microscopic carriers and different conductivity differences, so as to provide a more rigorous analysis method for the research on the conductivity of the two-dimensional electron gas material; meanwhile, the change of the concentration of the electron gas in a two-dimensional electron gas material system is realized through in-situ polarization charges, in-situ control and measurement can be realized, and the characterization and control of nanoscale electrical properties can be realized, so that small-size devices can be quickly obtained and researched.
In the embodiment, an atomic force microscope is adopted to apply a positive voltage to the two-dimensional electron gas material, and a downward polarization domain appears in the ferroelectric layer 3, so that the electron energy of the contact surface of the ferroelectric layer 3 and the AlGaN barrier layer 2 is reduced, and the charge of the two-dimensional electron gas material is exhausted, so that the concentration of the two-dimensional electron gas is reduced, the reduced concentration of the two-dimensional electron gas is recoverable and programmable, the purpose of controlling the crystal structure or the electron concentration at the material interface is achieved, and the difficulty in preparing a small-size device is reduced. Meanwhile, the embodiment realizes in-situ charge depletion through the atomic force microscope, has simple preparation process and short time consumption, can quickly obtain the small-size device, and is beneficial to the preparation and research of the small-size device.
Example two
Based on the first embodiment, the present embodiment describes the control of the two-dimensional electron gas concentration by taking the example of making the PZT/AlGaN/GaN HEMT two-dimensional electron gas material deplete charges.
Referring again to fig. 2 a-2 d and fig. 3 a-3 d, the method for operating PZT/AlGaN/GaN HEMT two-dimensional electron gas material to deplete charges includes the steps of:
and S1, testing and measuring the electrical properties of the surface of the PZT/AlGaN/GaN HEMT material in a conduction mode of an atomic force microscope.
The atomic force microscope is set to be in a conductive mode, the surface of the PZT/AlGaN/GaN HEMT material is connected to a wafer capable of conducting electricity by using silver adhesive, an SCM-PIT probe is installed, and laser spots are formed at the front end of the cantilever by adjusting laser. And placing a sample, and adjusting the position of a lens of the atomic force microscope to enable the atomic force microscope to respectively and clearly see the probe and the sample from top to bottom. After the needle insertion, setting parameters: the scan width range is: 10um, current sensitivity: 1nA/V, sample DC bias: 3v, scanning voltage: and (4) scanning the surface topography and current diagram of the sample at-10V to 10V, and clicking Ramp to obtain the I-V curve of the PZT/AlGaN/GaN HEMT material.
And S2, in the conduction mode of the atomic force microscope, enabling the PZT/AlGaN/GaN HEMT material to be depleted of charges.
Setting the AFM into a conductive mode, installing a conductive probe SCM-PIT, and adjusting laser to enable laser spots to be projected to the front end of the cantilever; placing PZT/AlGaN/GaN HEMT materials (samples), and adjusting the position of a lens of an optical microscope to enable the lens to respectively clear the probe and the sample from top to bottom; and (3) adjusting the contact position of the conductive probe SCM-PIT and the PZT surface, and finishing needle insertion by referring to fig. 2a and fig. 3 a.
After the needle insertion, setting a first parameter: the scanning width range is 10 μm, the scanning length-width ratio is 64, the ratio of the scanning point number/line number is 128 (the line number is 2, the point number is 256), and the sample direct current bias voltage is 8V; then, a positive voltage of 8V is applied to the two-dimensional electron gas material for 15s, as shown in fig. 2b and 3b, so that the charges of the two-dimensional electron gas facing the first region are exhausted, as shown in fig. 2c and 3c, thereby reducing the concentration of the two-dimensional electron gas.
Setting Y offset: 80nm, so that the conductive probe SCM-PIT moves a certain distance to a second area, and then a second parameter is set: the scanning width range is 10 μm, the scanning length-width ratio is 64, the ratio of scanning point number/line number is 128 (the line number is 2, the point number is 256), and the sample direct current bias voltage is 8V; then, a positive voltage of 8V is applied to the two-dimensional electron gas material for 15s, so that the charges of the two-dimensional electron gas directly opposite to the second region are exhausted, and please refer to fig. 2d and fig. 3d, the concentration of the two-dimensional electron gas is reduced.
And S3, measuring and measuring the electrical properties of the surface of the PZT/AlGaN/GaN HEMT material after the depletion of the charges in the conduction mode of the atomic force microscope.
And installing an SCM-PIT probe, and adjusting laser to enable laser spots to be shot at the front end of the cantilever. Placing PZT/AlGaN/GaN HEMT material, adjusting the position of the lens of the optical microscope, so that the atomic force microscope can respectively and clearly see the probe and the sample from top to bottom. After needle insertion, sample dc bias was set: 3v, scanning the surface appearance and the current diagram of the AlGaN/GaN HEMT material, wherein the scanning voltage range is-10 v; and clicking the Ramp to obtain an I-V curve of the AlGaN/GaN HEMT material after the depletion charge.
In the embodiment, the concentration of the two-dimensional electron gas can be expressed by measuring the I-V curve of the device by using the atomic force microscope before and after the charge is depleted, so that the concentration of the two-dimensional electron gas can be regulated and controlled.
In the embodiment, a positive voltage is applied to the device by using the ferroelectric material PZT, a downward polarization domain appears in the ferroelectric layer, so that the electron energy of the contact surface between the ferroelectric layer and the material is reduced, the charge is depleted at the two-dimensional electron gas interface, the concentration of the two-dimensional electron gas is reduced, the conductivity of the material is weakened, the purpose of regulating and controlling the concentration of the two-dimensional electron gas is achieved, a 10nm characteristic size device is rapidly obtained and researched, and a nanoscale device of the two-dimensional electron gas material PZT/AlGaN/GaN material is obtained.
The regulation and control method of the embodiment can represent nanoscale electrical properties in situ, and regulate and control the electron gas concentration and the transport characteristics of the two-dimensional electron gas material PZT/AlGaN/GaN HEMT.
EXAMPLE III
On the basis of the first embodiment, please refer to fig. 4a to 4c and fig. 5a to 5c, fig. 4a to 4c are schematic flow charts of another two-dimensional electron gas concentration regulating method according to an embodiment of the present invention, and fig. 5a to 5c are cross-sectional views of another two-dimensional electron gas concentration regulating process according to an embodiment of the present invention. The method for regulating and controlling the concentration of the two-dimensional electron gas comprises the following steps: and applying a preset negative voltage to the surface of the two-dimensional electron gas material by adopting an atomic force microscope to inject charges into the two-dimensional electron gas material. The two-dimensional electron gas material is a ferroelectric layer/AlGaN/GaN HEMT material.
Specifically, the regulation and control method comprises the following steps:
and S11, setting the atomic force microscope into a conductive mode, installing a conductive probe in the atomic force microscope, and adjusting the contact position of the conductive probe and the surface of the two-dimensional electron gas material.
In this embodiment, the two-dimensional electron gas material is a ferroelectric layer/AlGaN/GaN HEMT material, and includes a GaN channel layer 1, an AlGaN barrier layer 2, and a ferroelectric layer 3 disposed from bottom to top.
Specifically, the AFM is first set to the conductive mode; then installing a conductive probe SCM-PIT, and adjusting laser to enable laser spots to be shot at the front end of the cantilever; then, placing a two-dimensional electron gas material, and adjusting the position of a lens of the optical microscope to enable the lens to respectively and clearly see the probe and the sample from top to bottom; finally, the conductive probe SCM-PIT is adjusted to contact the surface of the two-dimensional electron gas material, and the needle insertion is completed, as shown in FIG. 4a and FIG. 5 a.
And S12, applying a preset negative voltage to the surface of the two-dimensional electron gas material under preset parameters by using the conductive probe so as to inject charges into the two-dimensional electron gas material.
Specifically, after needle insertion, preset parameters are set: the scanning width range is 0-100 mu m, the scanning length-width ratio is an integer larger than or equal to 1, the number of points is an integer larger than or equal to 2, and the number of lines is an integer larger than or equal to 2 (the minimum scanning width of the instrument is two small lines, the width is about 70nm), and the sample DC bias voltage is-10-0V; and then applying a preset negative voltage (i.e. a sample direct current bias voltage) to the two-dimensional electron gas material, as shown in fig. 4b and 5b, wherein the application time is 10-20 s, and the applied negative voltage injects charges into the two-dimensional electron gas material, as shown in fig. 4c and 5c, so as to increase the concentration of the two-dimensional electron gas.
Further, after the charges are injected into the two-dimensional electron gas material, the atomic force microscope may be used to apply a preset negative voltage to the surface of the two-dimensional electron gas material for multiple times, so as to stabilize the polarization of the domain of the ferroelectric layer 3, thereby maintaining the changed concentration of the two-dimensional electron gas for a longer time. When the preset negative voltage is applied for multiple times, the conductive probe SCM-PIT is located at the same position on the surface of the two-dimensional electron gas material.
In the embodiment, an atomic force microscope is adopted to apply a negative voltage to the two-dimensional electron gas material, an upward polarization domain appears in the ferroelectric layer 3, so that the electron energy of the contact surface between the ferroelectric layer 3 and the AlGaN barrier layer 2 is increased, charges are injected into the two-dimensional electron gas interface, the concentration of the two-dimensional electron gas is increased, and the increased concentration of the two-dimensional electron gas can be restored and programmed, so that the purpose of controlling the crystal structure or the electron concentration at the material interface is achieved, and the difficulty in preparing small-size devices is reduced. Meanwhile, the embodiment realizes in-situ charge injection through the atomic force microscope, has a simple preparation process and short time consumption, can quickly obtain the small-size device, and is favorable for the preparation and research of the small-size device.
Example four
Based on the third embodiment, the present embodiment describes the control of the two-dimensional electron gas concentration by taking the example of injecting charges into the two-dimensional electron gas material of the PZT/AlGaN/GaN HEMT.
Referring again to fig. 4 a-4 c and 5 a-5 c, the method for controlling the injection of charges into the PZT/AlGaN/GaN HEMT two-dimensional electron gas material includes the steps of:
and S1, testing and measuring the electrical properties of the surface of the PZT/AlGaN/GaN HEMT material in a conduction mode of an atomic force microscope.
The atomic force microscope is set to be in a conductive mode, the surface of the PZT/AlGaN/GaN HEMT material is connected to a wafer capable of conducting electricity by using silver adhesive, an SCM-PIT probe is installed, and laser spots are formed at the front end of the cantilever by adjusting laser. And placing a sample, and adjusting the position of a lens of the atomic force microscope to enable the atomic force microscope to respectively and clearly see the probe and the sample from top to bottom. After the needle insertion, setting parameters: the scan width range is: 10um, current sensitivity: 1nA/V, sample DC bias: 3v, scanning voltage: and (4) scanning the surface appearance and the current diagram of the sample after-10V to 10V, and clicking Ramp to obtain an I-V curve of the PZT/AlGaN/GaN HEMT material.
And S2, injecting charges into the PZT/AlGaN/GaN HEMT material in the conduction mode of the atomic force microscope.
Setting the AFM into a conductive mode, installing a conductive probe SCM-PIT, and adjusting laser to enable laser spots to be projected to the front end of the cantilever; placing PZT/AlGaN/GaN HEMT materials (samples), and adjusting the position of a lens of an optical microscope to enable the lens to respectively clear the probe and the sample from top to bottom; the position of electrically conducting probe SCM-PIT is adjusted to make it contact with the PZT surface to complete the needle insertion, see fig. 4a and 5 a.
After the needle is inserted, setting preset parameters: the scanning width range is 10 μm, the scanning length-width ratio is 64, the ratio of scanning point number/line number is 128 (the line number is 2, the point number is 256), and the sample direct current bias voltage is-8V; then, a negative voltage of-8V was applied to the two-dimensional electron gas material for 15s, as shown in fig. 4b and 5b, and charges were injected into the two-dimensional electron gas material, as shown in fig. 4c and 5c, thereby increasing the concentration of the two-dimensional electron gas.
And S3, measuring the electrical properties of the surface of the PZT/AlGaN/GaN HEMT material after the electric charges are injected in the conduction mode of the atomic force microscope.
And installing an SCM-PIT probe, and adjusting laser to enable laser spots to be shot at the front end of the cantilever. Placing PZT/AlGaN/GaN HEMT material, adjusting the position of the lens of the optical microscope, so that the atomic force microscope can respectively and clearly see the probe and the sample from top to bottom. After needle insertion, sample dc bias was set: 3v, scanning the surface appearance and the current diagram of the AlGaN/GaN HEMT material, wherein the scanning voltage range is-10 v; and clicking the Ramp to obtain an I-V curve of the AlGaN/GaN HEMT material after the charges are injected.
In the embodiment, the concentration of the two-dimensional electron gas can be expressed by measuring the I-V curve of the device by adopting the atomic force microscope before and after the charge is injected, so that the concentration of the two-dimensional electron gas can be regulated and controlled.
In the embodiment, a negative voltage is applied to the device by using the ferroelectric material, an upward polarization domain appears in the ferroelectric layer, the electron energy of the contact surface of the ferroelectric layer and the material is increased, and charges are injected into the two-dimensional electron gas interface, so that the concentration of the two-dimensional electron gas is increased, the conductivity of the material is improved, the purpose of regulating and controlling the concentration of the two-dimensional electron gas is achieved, a 10nm characteristic size device is rapidly obtained and researched, and a nanoscale device of the two-dimensional electron gas material PZT/AlGaN/GaN material is obtained.
The regulation and control method of the embodiment can represent nanoscale electrical properties in situ, and regulate and control the electron gas concentration and the transport characteristics of the two-dimensional electron gas material PZT/AlGaN/GaN HEMT.
The foregoing is a further detailed description of the invention in connection with specific preferred embodiments and it is not intended to limit the invention to the specific embodiments described. For those skilled in the art to which the invention pertains, numerous simple deductions or substitutions may be made without departing from the spirit of the invention, which shall be deemed to belong to the scope of the invention.
Claims (8)
1. A method for regulating and controlling the concentration of two-dimensional electron gas is characterized by comprising the following steps:
s1, applying a first positive voltage to a first region on the surface of a two-dimensional electron gas material by using an atomic force microscope to exhaust charges of the two-dimensional electron gas opposite to the first region, wherein the two-dimensional electron gas material is a ferroelectric layer/AlGaN/GaN HEMT material;
and S2, applying a second positive voltage to a second region on the surface of the two-dimensional electron gas material by using the atomic force microscope to ensure that the two-dimensional electron gas charges opposite to the second region are exhausted, wherein the first region and the second region are in parallel.
2. The method for regulating the concentration of two-dimensional electron gas according to claim 1, wherein the step S1 comprises:
s11, setting the atomic force microscope into a conductive mode, installing a conductive probe in the atomic force microscope and adjusting the contact position of the conductive probe and the surface of the two-dimensional electron gas material;
and S12, applying a first positive voltage to the first region under a first parameter by using the conductive probe, so that the two-dimensional electron gas charge opposite to the first region is depleted.
3. A method of regulating a two-dimensional electron gas concentration according to claim 2, wherein the first parameter comprises: the scanning width range is 0-100 μm, the scanning length-width ratio is an integer greater than or equal to 1, the number of points is an integer greater than or equal to 2, the number of lines is an integer greater than or equal to 2, and the sample DC bias voltage is 0-10 v.
4. The method for regulating the concentration of two-dimensional electron gas according to claim 2, wherein the step S2 comprises:
and shifting the conductive probe by 0-25 mu m along the target direction, and applying a second positive voltage to the second region under a second parameter to exhaust the two-dimensional electron gas charges just opposite to the second region.
5. The method for regulating and controlling the concentration of two-dimensional electron gas according to claim 1, wherein step S2 is followed by further comprising:
and S3, applying a preset positive voltage to a plurality of areas of the surface of the two-dimensional electron gas material, which are parallel to the first area, so that the two-dimensional electron gas charge facing each area in the plurality of areas is exhausted.
6. A method for regulating and controlling the concentration of two-dimensional electron gas is characterized by comprising the following steps:
s1, setting the atomic force microscope to be in a conducting mode, installing a conducting probe in the atomic force microscope and adjusting the contact position of the conducting probe and the surface of the two-dimensional electron gas material, wherein the two-dimensional electron gas material is made of a ferroelectric layer/AlGaN/GaN HEMT material;
and S2, applying the preset negative voltage to the surface of the two-dimensional electron gas material under preset parameters by using the conductive probe so as to inject charges into the two-dimensional electron gas material.
7. A method for regulating and controlling a two-dimensional electron gas concentration according to claim 6, wherein the preset parameters include: the scanning width range is 0-100 mu m, the scanning length-width ratio is an integer larger than or equal to 1, the number of points is an integer larger than or equal to 2, the number of lines is an integer larger than or equal to 2, and the sample direct current bias voltage is-10-0 v.
8. A method for regulating and controlling a concentration of a two-dimensional electron gas according to claim 6, further comprising the steps of:
and applying the preset negative voltage to the surface of the two-dimensional electron gas material for multiple times by adopting the atomic force microscope so as to inject charges into the two-dimensional electron gas material.
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