KR20120133524A - Inertial Sensor - Google Patents

Inertial Sensor Download PDF

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Publication number
KR20120133524A
KR20120133524A KR1020110052208A KR20110052208A KR20120133524A KR 20120133524 A KR20120133524 A KR 20120133524A KR 1020110052208 A KR1020110052208 A KR 1020110052208A KR 20110052208 A KR20110052208 A KR 20110052208A KR 20120133524 A KR20120133524 A KR 20120133524A
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KR
South Korea
Prior art keywords
cavity
inertial sensor
post
mass
membrane
Prior art date
Application number
KR1020110052208A
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Korean (ko)
Inventor
강윤성
이성준
박흥우
한승훈
김종운
이정원
최민규
Original Assignee
삼성전기주식회사
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Priority to KR1020110052208A priority Critical patent/KR20120133524A/en
Publication of KR20120133524A publication Critical patent/KR20120133524A/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G01C19/5719—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using planar vibrating masses driven in a translation vibration along an axis
    • G01C19/5733—Structural details or topology
    • G01C19/5755—Structural details or topology the devices having a single sensing mass
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/135—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by making use of contacts which are actuated by a movable inertial mass

Abstract

Regarding the inertial sensor of the present invention, the inertial sensor 100 according to the present invention includes a mass body 130 and a mass body 130 disposed below the central portion 113 of the plate-shaped membrane 110 and the membrane 110. Disposed below the rim 115 of the membrane 110, and having a thickness T 1 between the post 140 and the membrane 110 and the mass 130 that is thicker than the thickness T 2 of the mass 130. Since the bonding layer 160 is provided between the membrane 110 and the post 140, the thickness T 1 of the post 140 is formed to be thicker than the thickness T 2 of the mass body 130. There is no need to provide a separate lower cap, and thus the process of manufacturing the lower cap and the process of joining the lower cap and the post can be omitted, thereby simplifying the manufacturing process and reducing the manufacturing cost. .

Description

Inertial Sensor

The present invention relates to an inertial sensor.

Recently, the inertial sensor is used for military equipment such as satellites, missiles, and unmanned aerial vehicles. It is used for various purposes such as navigation and navigation.

In order to measure acceleration and angular velocity, such an inertial sensor generally adopts a structure in which a mass body is bonded to an elastic substrate such as a membrane. Through the above configuration, the inertial sensor can calculate the acceleration by measuring the inertial force applied to the mass, and can calculate the angular velocity by measuring the Coriolis force applied to the mass.

Specifically, the process of measuring acceleration and angular velocity using an inertial sensor is as follows. First, the acceleration can be obtained by Newton's law of motion "F = ma", where "F" is the inertia force acting on the mass, "m" is the mass of the mass, and "a" is the acceleration to be measured. Since the mass m of the mass is already a recognized value, the acceleration a can be obtained by measuring the force F acting on the mass. In addition, the angular velocity can be obtained by the Coriolis Force "F = 2mΩ? V" formula, where "F" is the Coriolis force acting on the mass, "m" is the mass of the mass, and "Ω" is to be measured. The angular velocity, "v", is the velocity of the mass. Of these, the kinetic velocity (v) of the mass and the mass (m) of the mass are already known values. Therefore, the angular velocity (Ω) can be obtained by measuring the Coriolis force (F) acting on the mass.

As such, in order to measure acceleration and angular velocity, the inertial sensor should have a mass, a membrane capable of vibrating the mass, and a post supporting the membrane. At this time, in consideration of the damping effect of air, a certain space must be secured under the mass. However, since the inertial sensor according to the prior art has the same thickness of the mass body and the post, in order to secure space in the lower portion of the mass body, a bottom cap having a groove is formed at the bottom of the post. Therefore, the inertial sensor according to the prior art has to manufacture a lower cap as well as to bond the lower cap and the post, there is a complicated manufacturing process. In addition, there is a problem that the overall thickness of the inertial sensor increases due to the thickness of the lower cap itself.

The present invention has been made to solve the above problems, an object of the present invention is to form a thickness of the post thicker than the thickness of the mass, by inertial sensor that can secure the space in the lower portion of the mass without a separate lower cap It is to provide.

An inertial sensor according to a preferred embodiment of the present invention is a plate-like membrane, a mass body disposed below the central portion of the membrane, a post disposed below the edge of the membrane so as to surround the mass, the thickness is thicker than the thickness of the mass and And a bonding layer provided between the membrane and the mass and between the membrane and the post.

Here, the recess further includes a recess recessed along an inner edge of the lower surface of the post.

In addition, the concave portion is characterized in that the rounded process.

In addition, the thickness of the recess is the same as the thickness difference between the post and the mass.

The post and the mass are formed of silicon, the bonding layer is formed of silicon oxide, and the membrane is formed of silicon.

Method for manufacturing an inertial sensor according to a preferred embodiment of the present invention comprises the steps of (A) preparing a base member laminated in the order of the substrate, the bonding layer and the membrane, (B) a predetermined depth by etching the central portion of the substrate in the thickness direction Forming a first cavity of (C) and forming a second cavity having a cross-sectional closed loop by etching in a thickness direction to penetrate the substrate in the first cavity, thereby forming a mass surrounded by the second cavity and the first cavity. And forming a post surrounding the two cavities.

Here, the thickness of the post is characterized in that thicker than the thickness of the mass.

In addition, in the step (C), it is characterized in that to form the second cavity along the edge of the first cavity.

Further, in the step (C), characterized in that the second cavity is formed so as to be spaced in a predetermined interval inward from the edge of the first cavity.

In addition, the edge of the first cavity is characterized in that the rounded process.

Further, in the step (B), the first cavity is characterized in that it is formed by anisotropic etching.

Further, in the step (B), the first cavity is characterized in that it is formed by isotropic etching.

Further, in the step (C), the second cavity is characterized in that it is formed by anisotropic etching.

Further, in the step (A), the substrate is formed of silicon, the bonding layer is formed of silicon oxide, the membrane is characterized in that formed of silicon.

The features and advantages of the present invention will become more apparent from the following detailed description based on the accompanying drawings.

Prior to that, terms and words used in the present specification and claims should not be construed in a conventional and dictionary sense, and the inventor may properly define the concept of the term in order to best explain its invention It should be construed as meaning and concept consistent with the technical idea of the present invention.

According to the present invention, since the thickness of the post is formed thicker than the thickness of the mass, it is not necessary to provide a separate lower cap, and thus the process of manufacturing the lower cap and the process of joining the lower cap and the post can be omitted. The manufacturing process can be simplified and the manufacturing cost can be reduced.

In addition, according to the present invention, there is no need to have a lower cap, it is possible to reduce the weight and thickness of the inertial sensor, there is an advantage that can be implemented in light weight and process simplification.

1 is a cross-sectional view of an inertial sensor according to a first preferred embodiment of the present invention;
2 to 3 are cross-sectional views of an inertial sensor according to a second preferred embodiment of the present invention;
4 to 11 are process cross-sectional views showing the manufacturing method of the inertial sensor according to the first preferred embodiment of the present invention in the process order; And
12 to 19 are process cross-sectional views showing the manufacturing method of the inertial sensor according to the second preferred embodiment of the present invention in the process order.

BRIEF DESCRIPTION OF THE DRAWINGS The objectives, specific advantages and novel features of the present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG. It should be noted that, in the present specification, the reference numerals are added to the constituent elements of the drawings, and the same constituent elements are assigned the same number as much as possible even if they are displayed on different drawings. Further, in describing the present invention, detailed descriptions of related well-known techniques that may unnecessarily obscure the subject matter of the present invention will be omitted.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a cross-sectional view of an inertial sensor according to a first preferred embodiment of the present invention.

As shown in FIG. 1, the inertial sensor 100 according to the present exemplary embodiment includes a mass body 130 and a mass body 130 disposed below the central portion 113 of the plate-shaped membrane 110 and the membrane 110. Disposed below the rim 115 of the membrane 110, and having a thickness T 1 between the post 140 and the membrane 110 and the mass 130 that is thicker than the thickness T 2 of the mass 130. The bonding layer 160 is provided between the membrane 110 and the post 140.

The membrane 110 is formed in a plate shape and has an elasticity so that the mass body 130 can vibrate. Here, the boundary of the membrane 110 is not exactly distinguished, but may be divided into a central portion 113 in the center of the membrane 110 and an edge 115 provided along the outer edge of the membrane 110. In this case, the mass body 130 is provided below the central portion 113 of the membrane 110, and the center portion 113 of the membrane 110 generates displacement corresponding to the movement of the mass body 130. In addition, a post 140 is provided below the edge 115 of the membrane 110 to support the central portion 113 of the membrane 110. On the other hand, since the elastic deformation between the central portion 113 and the edge 115 of the membrane 110, by placing a drive electrode to drive the mass 130 or to place a sensing electrode to detect the displacement of the mass 130 Can be. Here, the driving electrode and the sensing electrode may drive the mass body 130 or detect the displacement of the mass body 130 by a piezoelectric method, a piezoresistive method or a capacitance method. However, the driving electrode and the sensing electrode do not necessarily need to be disposed between the central portion 113 and the edge 115 of the membrane 110, and a part of the driving electrode and the sensing electrode is disposed at the central portion 113 or the edge 115 of the membrane 110. Of course, it can be arranged.

The mass 130 is a displacement generated by the inertial force or the Coriolis force, is provided below the central portion 113 of the membrane 110. In addition, the post 140 is formed in a hollow shape to support the membrane 110 to secure a space in which the mass body 130 may cause a displacement, and the edge of the membrane 110 ( 115) is provided at the bottom.

Here, the thickness T 1 of the post 140 is formed thicker than the thickness T 2 of the mass body 130. Since the thickness T 1 of the post 140 is formed to be thicker than the thickness T 2 of the mass body 130, the lower portion of the mass body 130 is provided with a space for causing the mass body 130 to be displaced downward. Therefore, the inertial sensor 100 according to the present embodiment does not need to have a lower cap separately from the inertial sensor according to the prior art. As a result, the process of manufacturing the lower cap and the process of bonding the lower cap and the post 140 can be omitted, it is possible to simplify the manufacturing process and reduce the manufacturing cost.

The bonding layer 160 is provided between the membrane 110 and the mass body 130 and between the membrane 110 and the post 140 to bond the mass body 130 and the post 140 to the membrane 110. Do it. In the drawing, the bonding layer 160 is formed on the front surface of the membrane 110, but is not limited thereto. The bonding layer 160 may be formed only at a portion corresponding to the mass body 130 and the post 140.

Meanwhile, the inertial sensor 100 according to the present embodiment may be manufactured by selectively etching a silicon on insulator (SOI) substrate. In this case, the post 140 and the mass body 130 are formed of silicon (support substrate of the SOI substrate), the bonding layer 160 is formed of silicon oxide (insulation layer of the SOI substrate), and the membrane 110 is formed of silicon ( Top silicon layer of the SOI substrate).

In addition, an integrated circuit 300 and a lead frame 350 bonded to the adhesive layer 370 may be provided below the post 140. Here, the integrated circuit 300 serves to control the inertial sensor 100 in a practical manner, and the lead frame 350 supplies electricity to the integrated circuit 300 and supports the integrated circuit 300. To perform. As described above, the inertial sensor 100 according to the present exemplary embodiment may omit the lower cap, so that the integrated circuit 300 and the lead frame 350 may be provided at the lower portion of the post 140. Accordingly, the overall weight and thickness of the inertial sensor 100 can be reduced.

2 to 3 are cross-sectional views of an inertial sensor according to a second preferred embodiment of the present invention.

2 to 3, the biggest difference between the inertial sensor 200 according to the present embodiment and the inertial sensor 100 according to the first embodiment is whether the recess 145 is provided. Therefore, the present embodiment will be described with the concave portion 145 as the center, and the description overlapping with the first embodiment will be omitted.

The recess 145 is formed along the inner edge of the lower surface of the post 140. That is, a step is formed to be recessed in the inner edge of the lower surface of the post 140. In this case, the edge of the recess 145 may be formed by anisotropic etching to form a vertical plane (see FIG. 2), or may be formed by isotropic etching to be rounded (see FIG. 3). In addition, the thickness T 3 of the recess 145 is the same as the thickness difference T 4 between the post 140 and the mass body 130, which is implemented as a feature on the manufacturing process, which will be described later. The same meaning as described above does not mean that the thickness T 3 of the recess 145 is mathematically identical to the thickness difference T 4 of the post 140 and the mass body 130, but in a manufacturing process. It includes a slight change in thickness due to processing error occurring.

4 to 11 are process cross-sectional views showing the manufacturing method of the inertial sensor according to the first embodiment of the present invention in the process order.

4 to 11, the method of manufacturing the inertial sensor 100 according to the present embodiment includes (A) a base member stacked in the order of the substrate 170, the bonding layer 160, and the membrane 110. 150, a step (B) etching a central portion of the substrate 170 in a thickness direction to form a first cavity 180 having a predetermined depth, and (C) a substrate 170 in the first cavity 180. The second cavity 190 having a closed loop is formed by etching in the thickness direction so as to penetrate the through-hole, thereby forming the mass body 130 and the second cavity 190 surrounded by the second cavity 190. And forming a surrounding post 140.

First, as shown in FIG. 4, the base member 150 is prepared. Here, the base member 150 is stacked in the order of the substrate 170, the bonding layer 160 and the membrane 110, for example, a silicon on insulator (SOI) substrate that is easy to micro MEMS (Micro Electro Mechanical System) process Can be used. When the SOI substrate is used as the base member 150, the substrate 170 is formed of silicon (a supporting substrate of the SOI substrate), the bonding layer 160 is formed of silicon oxide (insulating layer of the SOI substrate), and the membrane ( 110 is formed of silicon (top silicon layer of a SOI substrate).

Next, as shown in FIGS. 5 to 7, the central portion of the substrate 170 is etched in the thickness direction to form the first cavity 180. Specifically, the first mask 185 is disposed on the bottom surface of the substrate 170 except for the center portion of the substrate 170 so as to correspond to the first cavity 180 to be formed (see FIG. 5). Thereafter, a central portion of the substrate 170 on which the first mask 185 is not disposed is selectively etched through an etching process to form a first cavity 180 (see FIG. 6). In this case, the etching process preferably uses anisotropic etching so that the substrate 170 is removed in the vertical direction. The anisotropic etching is not particularly limited, but is preferably dry etching, and more preferably, Deep Reactive Ion Etching (DRIE) may be used. Here, the DRIE performs etching by simultaneously performing a physical reaction and a chemical reaction of ions formed by the plasma. After the first cavity 180 is formed, the first mask 185 completes its role and is removed from the substrate 170 (see FIG. 7).

Next, as shown in FIGS. 8 to 10, etching in the thickness direction to penetrate the substrate 170 in the first cavity 180 to form a second cavity 190 having a closed cross section. Specifically, first, the second mask 195 is disposed on the bottom surface of the substrate 170 except for the edge of the inside of the first cavity 180 to correspond to the second cavity 190 to be formed (see FIG. 8). Thereafter, through the etching process, the inside of the first cavity 180 in which the second mask 195 is not disposed is selectively etched to form a second cavity 190 whose cross section forms a closed loop (see FIG. 9). In this case, the second cavity 190 is formed along the edge of the first cavity 180. Here, the etching process, like the first cavity 180, it is preferable to use anisotropic etching, DRIE may be used. In particular, since the DRIE can be selectively etched according to a material, there is an advantage in that only the substrate 170 can be accurately etched among the substrate 170 and the bonding layer 160 in this step. After forming the second cavity 190, the second mask 195 has completed its role, and thus is removed from the substrate 170 (see FIG. 10).

On the other hand, by forming a second cavity 190 whose cross section forms a closed loop, the substrate 170 is divided into a mass body 130 and a post 140. That is, the portion surrounded by the second cavity 190 of the substrate 170 becomes the mass body 130, and the portion surrounding the second cavity 190 becomes the post 140.

In the manufacturing method of the inertial sensor 100 according to the present embodiment, since the first cavity 180 is formed as described above, the second cavity 190 is formed to form the mass body 130 and the post 140. The thickness T 1 of the post 140 is thicker than the thickness T 2 of the mass body 130 by the thickness of the first cavity 180. Accordingly, the lower portion of the mass body 130 is provided with a space for causing the mass body 130 to be displaced downward, and unlike the inertial sensor according to the prior art, it is not necessary to separately provide a lower cap. As a result, since the process of manufacturing the lower cap and the process of bonding the lower cap and the post 140 can be omitted, the manufacturing process can be simplified and the manufacturing cost can be reduced.

Next, as shown in FIG. 11, the integrated circuit 300 and the lead frame 350 bonded to the adhesive layer 370 are disposed on the lower part of the post 140. In the manufacturing method of the inertial sensor 100 according to the present embodiment, since the integrated circuit 300 and the lead frame 350 are disposed below the post 140 without a lower cap, the overall weight and thickness of the inertial sensor 100 may be increased. Can be reduced.

12 to 19 are process cross-sectional views showing the manufacturing method of the inertial sensor according to the second preferred embodiment of the present invention in the process order.

12 to 19, the biggest difference between the manufacturing method of the inertial sensor 200 according to the present embodiment and the manufacturing method of the inertial sensor 100 according to the first embodiment described above is the second cavity ( 190 is the formation position. Therefore, the present embodiment will be described based on the formation position of the second cavity 190, and the description overlapping with the first embodiment will be omitted.

First, as shown in FIG. 12, the base member 150 stacked in the order of the substrate 170, the bonding layer 160, and the membrane 110 is prepared. Thereafter, as shown in FIGS. 13 to 15, the central portion of the substrate 170 is etched in the thickness direction to form the first cavity 180. Specifically, after the first mask 185 is disposed on the substrate 170 (see FIG. 13), the first cavity 180 may be selectively etched to form the first cavity 180 (see FIG. 14). In this case, as shown in FIG. 14A, the etching process preferably uses anisotropic etching so that the substrate 170 is removed in the vertical direction. However, the present invention is not necessarily limited to the anisotropic etching, and as shown in FIG. 14B, the rounding process 147 may be performed on the edge of the first cavity 180 by using isotropic etching such as wet etching. Hereinafter, FIGS. 14A, 15A, 16A, 17A, 18A, and 19A are illustrated based on a case in which the first cavity 180 is formed by anisotropic etching, and FIGS. 14B, 15B, 16B, and 17B. 18B and 19B illustrate the case where the first cavity 180 is formed by isotropic etching. After the first cavity 180 is formed, since the first mask 185 has completed its role, the first mask 185 is removed from the substrate 170 (see FIG. 15). On the other hand, the second cavity 190 for determining the boundary between the mass body 130 and the post 140 in the step to be described later is formed so as to be spaced in the predetermined interval (D) inward from the edge of the first cavity 180, this step In the first cavity 180 it is preferable to form a wider than the first embodiment described above.

Next, as shown in FIGS. 16 to 18, the second cavity 190 having a closed loop is formed by etching in the thickness direction to penetrate the substrate 170 in the first cavity 180. In detail, the second mask 195 may be disposed on the bottom surface of the substrate 170 except for a portion spaced a predetermined distance D from the edge of the first cavity 180 to correspond to the second cavity 190 to be formed first. (See Fig. 16). Thereafter, through the etching process, the inside of the first cavity 180 in which the second mask 195 is not disposed is selectively etched to form a second cavity 190 forming a closed loop (see FIG. 17). At this time, the second cavity 190 is formed to be spaced apart from the edge of the first cavity 180 by a predetermined interval (D). In particular, when the edge of the first cavity 180 is rounded 147 through isotropic etching (see FIG. 17B), the second cavity 190 is formed by rounding the edge of the first cavity 180. It is formed inside. Here, the etching process may preferably use anisotropic etching, and may use DRIE. After forming the second cavity 190, the second mask 195 has completed its role, and thus is removed from the substrate 170 (see FIG. 18).

On the other hand, by forming a second cavity 190 whose cross section forms a closed loop, the substrate 170 is divided into a mass body 130 and a post 140. At this time, since the second cavity 190 is formed to be spaced inwardly from the edge of the first cavity 180 by a predetermined distance D, the recess 145 recessed along the inner edge of the bottom surface of the post 140 finally. Is formed. As a result, since the thickness T 3 of the recess 145 is the thickness of the first cavity 180, the thickness T 3 of the recess 145 is the thickness difference T between the post 140 and the mass 130. 4 )

In the manufacturing method of the inertial sensor 200 according to the present embodiment, since the thickness T 1 of the post 140 is thicker than the thickness T 2 of the mass body 130, it is not necessary to separately provide a lower cap. This can simplify the manufacturing process and reduce the manufacturing cost.

Next, as shown in FIG. 19, an integrated circuit 300 for controlling the inertial sensor 200 and a lead frame 350 for supplying electricity to the integrated circuit 300 are disposed below the post 140. Here, the integrated circuit 300 and the lead frame 350 are bonded using the adhesive layer 370. Since the lower cap is omitted and the integrated circuit 300 and the lead frame 350 are disposed directly below the post 140, the overall weight and thickness of the inertial sensor 200 may be reduced.

Although the present invention has been described in detail through specific embodiments, this is for explaining the present invention in detail, and an inertial sensor and a method of manufacturing the same according to the present invention are not limited thereto. It will be apparent that modifications and improvements are possible by those skilled in the art. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

100, 200: inertial sensor 110: membrane
113: central portion of the membrane 115: membrane edge
130: mass 140: post
145: recess 147: rounding treatment
150: base member 160: bonding layer
170: substrate 180: first cavity
185: First Mask 190: Second Cavity
195: second mask 300: integrated circuit
350: leadframe T 1 : thickness of post
T 2 : thickness of mass T 3 : thickness of recess
T 4 : Difference in thickness between post and wrangler D: Predetermined interval

Claims (14)

Plate-like membranes;
A mass disposed below the central portion of the membrane;
A post disposed under the rim of the membrane so as to surround the mass and having a thickness thicker than that of the mass; And
A bonding layer provided between the membrane and the mass and between the membrane and the post;
An inertial sensor comprising a.
The method according to claim 1,
An inertial sensor, characterized in that it further comprises a recess recessed along the inner edge of the lower surface of the post.
The method according to claim 2,
The edge of the concave portion is an inertial sensor, characterized in that the rounding process.
The method according to claim 2,
And the thickness of the recess is equal to the difference in thickness between the post and the mass.
The method according to claim 1,
The post and the mass are formed of silicon,
The bonding layer is formed of silicon oxide,
The membrane is an inertial sensor, characterized in that formed of silicon.
(A) preparing a base member laminated in the order of the substrate, the bonding layer and the membrane;
(B) etching a central portion of the substrate in a thickness direction to form a first cavity having a predetermined depth; And
(C) forming a second cavity having a cross-sectional closed loop by etching in the thickness direction to penetrate the substrate in the first cavity, thereby forming a mass surrounded by the second cavity and a post surrounding the second cavity; step;
Method of manufacturing an inertial sensor comprising a.
The method of claim 6,
The thickness of the post is a manufacturing method of the inertial sensor, characterized in that thicker than the thickness of the mass.
The method of claim 6,
In the step (C),
The second cavity is formed along the edge of the first cavity manufacturing method of the sensor.
The method of claim 6,
In the step (C),
And forming the second cavity so as to be spaced inwardly from an edge of the first cavity by a predetermined interval.
The method according to claim 9,
The edge of the first cavity is a manufacturing method of the inertial sensor, characterized in that the rounding process.
The method of claim 6,
In the step (B)
The first cavity is a method of manufacturing an inertial sensor, characterized in that formed by anisotropic etching.
The method of claim 6,
In the step (B)
The first cavity is a method of manufacturing an inertial sensor, characterized in that formed by isotropic etching.
The method of claim 6,
In the step (C),
The second cavity is a method of manufacturing an inertial sensor, characterized in that formed by anisotropic etching.
The method of claim 6,
In the step (A)
The substrate is formed of silicon,
The bonding layer is formed of silicon oxide,
The membrane is a method of manufacturing an inertial sensor, characterized in that formed of silicon.
KR1020110052208A 2011-05-31 2011-05-31 Inertial Sensor KR20120133524A (en)

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