KR20120128880A - Extreme Ultraviolet Generation Apparatus and Method for Application in Lithography Light Source - Google Patents

Extreme Ultraviolet Generation Apparatus and Method for Application in Lithography Light Source Download PDF

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Publication number
KR20120128880A
KR20120128880A KR1020110046804A KR20110046804A KR20120128880A KR 20120128880 A KR20120128880 A KR 20120128880A KR 1020110046804 A KR1020110046804 A KR 1020110046804A KR 20110046804 A KR20110046804 A KR 20110046804A KR 20120128880 A KR20120128880 A KR 20120128880A
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KR
South Korea
Prior art keywords
micro
solid beads
euv
electrodes
gun
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KR1020110046804A
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Korean (ko)
Inventor
김영대
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김영대
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Priority to KR1020110046804A priority Critical patent/KR20120128880A/en
Publication of KR20120128880A publication Critical patent/KR20120128880A/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0275—Photolithographic processes using lasers

Abstract

The present invention relates to an apparatus and method for generating extreme ultraviolet light (EUV) for application to a lithographic light source by generating extreme ultraviolet (EUV) from micro-solid beads that are accelerated and discharged from a ball gun.

Description

Extreme Ultraviolet Generation Apparatus and Method for Application in Lithography Light Source}

BACKGROUND OF THE INVENTION Field of the Invention The present invention relates to an apparatus and method for generating extreme ultraviolet light, and more particularly, to generate extreme ultraviolet light (hereinafter referred to as 'EUV') from micro solid beads that are accelerated and discharged from a bead gun to be applied to a lithography light source. An apparatus and method for generating ultraviolet light.

Lithography processes for exposing a fine pattern of a mask onto a semiconductor wafer are involved in the manufacture of semiconductor integrated circuits, and higher resolution light sources have been required to increase the degree of integration of integrated circuits. As a light source used in lithography, mercury lamps with light of 436nm wavelength were used in the early 60s, and light sources generating deep ultraviolet (DUV) with wavelengths of 248nm and 193nm using excimer laser have been developed since the 90s. Recently, laser-produced plasma light source (LPP) light source technology, which obtains EUV at a wavelength of 13.5 nm from a plasma generated from Sn (tin) liquid metal droplets using a laser, has also been used.

However, in the conventional LPP technology, a heating device for heating 500 ° C. or more is required to obtain a Sn liquid metal drop, and a large cost for securing a high purity Sn liquid metal is required. In addition, in the conventional LPP technology, the gap in which the liquid metal drops fall or the size of the drops may vary due to the clogging phenomenon in the nozzle, and the liquid metal as shown in FIG. 1B due to an external environment. Due to the droplets not falling in a straight line and scattering laterally, or the liquid metal droplets are scattered and dispersed as shown in FIG. 1 (B), the drops do not exhibit a clean spectrum with a wavelength of 13.5 nm as shown in FIG. There is a problem of reducing the resolution by generating EUV.

Accordingly, the present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a simpler structure for application to a lithographic light source capable of accelerating micro solid beads with a bead gun to generate EUV in LPP or DPP form. An EUV generating apparatus and method are provided.

First, to summarize the features of the present invention, EUV generating apparatus according to an aspect of the present invention for achieving the object of the present invention as described above, by accelerating the micro-solid beads with a ball gun discharge through the discharge port of the ball gun Irradiating a laser beam to the micro-solid bead to be, characterized in that to provide a EUV collected by reflecting the EUV in a certain angle range generated from the micro-solid bead irradiated by the laser beam to the curved mirror of the collector.

In addition, the EUV generator according to another aspect of the present invention, by accelerating the micro-solid beads with a bead gun passes the micro solid beads discharged through the discharge port of the bead gun to the electron beam generating source, the electron beam generated from the electron beam generating source It is characterized by providing the EUV collected by reflecting the EUV in a certain angle range generated in the irradiated micro-solid beads to the curved mirror of the collector.

The ball gun includes a plurality of electrodes in a ring form for sequentially passing the micro solid beads, and the plurality of electrodes may accelerate the micro solid beads using an electric field formed by applying a voltage from a control device. have.

An inlet of the bead gun is electrically connected to a first electrode of the plurality of electrodes such that the micro solid beads are charged by the first electrode, and the charged micro solid beads are at least one subsequent one of the plurality of electrodes Accelerated by another electrode, the control device applies voltages of different polarities to the first electrode and the subsequent at least one other electrode. The control device may sequentially apply a pulsed voltage to the plurality of electrodes.

On the other hand, the bead gun includes a plurality of coils for sequentially passing the micro solid beads, and the plurality of coils may accelerate the micro solid beads using an electromagnetic field formed by applying a voltage from a control device. have. The control device may sequentially apply a pulsed voltage to the plurality of coils.

The EUV generator includes an ultrasonic generator for shaking the storage container at an outer side of the storage container so as to send the micro solid beads contained in the storage container to the inlet of the ball gun one by one.

The micro solid beads may be a solid powder consisting of Sn, Li, Xe, or a compound including any one or more thereof.

In addition, the EUV generation method according to another aspect of the present invention, by accelerating the micro-solid beads, irradiating the laser beam to the accelerated micro-solid beads, collecting the EUV generated from the micro-solid beads irradiated with the laser beam Characterized in that.

And, the EUV generation method according to another aspect of the present invention, by accelerating the micro-solid beads, irradiating the electron beam to the accelerated micro-solid beads, collecting the EUV generated from the micro-solid beads irradiated with the electron beam It features.

According to the EUV generator and method according to the present invention, EUV can be provided through a simple structure for accelerating micro solid beads.

In addition, in order to obtain a higher purity micro solid beads than in the conventional LPP technology, it is relatively low cost, and the same heating apparatus is unnecessary.

In addition, since clogging does not occur in the bead gun, it is possible to generate high quality EUV using a certain size of micro solid beads, and there is concern about scattering of micro solid beads or scattering of various branches. Therefore, it is possible to provide a high resolution EUV showing a clear spectrum.

1 is a view for explaining a conventional LPP light source.
2 is a view for explaining an EUV generating apparatus according to an embodiment of the present invention.
3 is a view for explaining a bead gun according to an embodiment of the present invention.
4 is an example of a voltage applied to the electrode of FIG. 3.
5 is a view for explaining a bead gun according to another embodiment of the present invention.
6 is an example of a voltage applied to the coil of FIG. 4.
7 is a view for comparing and comparing the EUV spectrum according to the conventional technique and the technique of the present invention.
8 is a diagram for describing an EUV generator according to another embodiment of the present invention.
9 is a view for explaining the principle of EUV generation by the electron beam of FIG.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the like elements throughout.

2 is a view for explaining the EUV generating apparatus 100 according to an embodiment of the present invention.

2, the EUV generator 100 according to an embodiment of the present invention includes a storage container 110, an ultrasonic generator 111, a bead gun 120, a storage device 130, and a laser generator 140. ), An optical system 141, a collector 150, and a controller 160. The EUV generator 100 may be operated in a vacuum state in which a certain degree of vacuum is maintained.

The storage container 110 contains micro solid beads. Micro-solid beads are the Sn (tin), Li (lithium), Xe (xenon), or compounds containing any one or more of these, for example, Sn 1 - y Y y, Li 1 - y Y y, Xe 1 - y Y y And the like, where Y is oxygen, hydrogen, and other elements such as metals, and y is a component powder. The diameter of such micro solid beads is approximately 30 micrometers, and other diameters may be selected within 10 to 100 micrometers. Such micro solid beads are easier to obtain high purity quality at a lower cost than conventional liquid metal droplets, and there is no need to heat the micro solid beads for EUV generation.

Ultrasonic generator 111 is mounted on the outer side of the storage container 110, by generating an ultrasonic wave (ultrasonic wave) by shaking the outer wall of the storage container 110, micro-solid beads contained in the storage container 110 One by one to be sent to the entrance of the ball gun 120. Power or an on / off control signal required for the ultrasonic wave generator 111 may be supplied from the controller 160.

The ball gun 120 may receive and accelerate the micro solid beads sent from the storage container 110 through the inlet as above, and discharge the accelerated micro solid beads through the discharge port without clogging. The micro solid beads discharged from the ball gun 120 may be sent to the storage device 130, stored in the storage device 130, and recycled or discarded. The operation of the ball gun 120 will be described in more detail with reference to FIGS. 3 and 5 below, and various control signals necessary for the operation of the ball gun 120 may be supplied from the controller 160.

The laser generator 140 may generate a continuous oscillation laser beam or a pulse beam having a short irradiation time of tens of kilowatts or more nanoseconds, pico seconds, or femto seconds. have. As the user changes settings required for the controller 160, the laser generator 140 under the control of the controller 160 may generate a laser beam having an appropriate power and wavelength. The laser beam is generated to have energy that is irradiated to the micro solid beads so that EUV can be generated from the micro solid beads. The laser generator 140 may generate a CO 2 gas laser beam, but is not limited thereto. In some cases, a laser beam or a semiconductor laser beam using an active medium such as another gas or a liquid or a solid may be used. Can also generate

The optical system 141 collects (focuses) the laser beam generated by the laser generator 140 and irradiates the micro-solid beads discharged from the bead gun 120. As the user changes the settings required for the control device 160, the optical system 141 under the control of the control device 160 is discharged from the ball gun 120 and discharge path of the micro solid beads toward the storage device 130 A laser beam may be focused and irradiated to a certain area of the image (an area of a focusing range, for example, 100 micrometer diameter).

Accordingly, the micro solid beads irradiated with the laser beam by the optical system 141 can be excited by the energy of the laser beam to generate EUV. Depending on the material of the micro solid beads, the wavelength of the EUV may range from 10 to 100 micrometers, and the EUV generated through the corresponding side of the micro solid beads to which the laser beam collides is radiated to the surroundings.

The EUV generated from the micro solid beads is mainly emitted in a certain angle range (for example, in the range of 60 to 90 degrees to the laser beam side), and the curved mirror of the collector 150 has the micro solid beads in the predetermined angle range as above. Reflect the EUV generated at and collect it in the target position. As needed, as the user changes the settings required for the control device 160, the control device 160 changes the installation angle of the curved mirror of the collector 150 to change the angle of collecting EUV generated from the micro solid beads. Can be. The reflective surface of the curved mirror of the collector 150 may be made of a surface in which a thin film of Ru, Si, Mo, or the like is formed in a multi-layered structure. parabolic) can be appropriately designed.

The EUV thus collected may be provided for application to a light source for semiconductor integrated circuit fabrication. EUV generated and collected in micro solid beads can be used, for example, in an EUV light source for exposure for lithography processes. EUV emitted from the EUV light source may be irradiated to the semiconductor wafer below through the mask for semiconductor integrated circuit manufacturing and the condensing optical system, thereby forming a pattern required for the photoresist (photoresist) applied on the semiconductor wafer. However, the present invention is not limited thereto, and the EUV light source may be used to directly irradiate EUV on a mask placed on a semiconductor wafer without the light converging optical system.

Thus, in the EUV generator 100 according to an embodiment of the present invention, it is possible to generate a high quality EUV by using a certain size micro-solid beads discharged without clogging phenomenon, scattering of the micro solid beads Since there is no fear of scattering or splitting, it is possible to provide a high resolution EUV showing a clean spectrum as shown in FIG.

On the other hand, the bead gun 120 as described above may be implemented in the same manner as in FIG.

3 is a view for explaining the ball gun 300 according to an embodiment of the present invention.

Referring to FIG. 3, the bead gun 300 according to an embodiment of the present invention for application to the bead gun 120 of FIG. 1 includes a plurality of electrodes 320 having a ring shape mounted in the housing 310. can do.

As described above, the micro solid beads sent one by one from the storage container 110 may be accelerated while sequentially passing through the plurality of electrodes 320. The plurality of electrodes 320 receives a direct current (DC) voltage from the controller 160, and thus, the plurality of electrodes 320 of the bead gun 300 are formed by an electric field formed by each of the plurality of electrodes 320. The accelerated micro solid beads may be accelerated and the accelerated micro solid beads may be discharged through the discharge port of the bead gun 300 while sequentially passing through the plurality of electrodes 320.

For example, as shown in FIG. 3, the inlet of the bead gun 300 made of a conductor is electrically connected to the first electrode of the plurality of electrodes 320. Accordingly, the inlet of the bead gun 300 is contacted with the inlet of the bead gun 300. The solid beads are charged by the first electrode to have a predetermined charge (e.g., a positive charge if the first electrode is a positive voltage and a negative charge if the first electrode is a negative voltage). Can be. The microsolid beads thus charged may be accelerated in the form of being attracted by another electrode (which may be one or more) that is applied with a voltage of opposite polarity.

As shown in FIG. 4, the controller 160 may sequentially apply necessary pulse voltages to the plurality of electrodes 320. For example, a positive pulse voltage is applied to the first of the plurality of electrodes 320 for a predetermined time, so that the micro solid beads are charged with a positive charge at the inlet of the ball gun 300, and the other electrodes that follow. As the negative pulse voltage is sequentially applied to a predetermined time, the micro solid beads can be attracted and accelerated. The reverse case can be operated similarly. For example, a negative pulse voltage is applied to the first electrode of the plurality of electrodes 320 for a predetermined time, so that the micro solid beads are charged with negative charge at the inlet of the ball gun 300, and the other electrodes that follow. As the positive pulse voltage is sequentially applied to each time, the micro solid beads can be attracted and accelerated.

When the controller 160 sequentially applies the required voltages to the plurality of electrodes 320, the controller 160 may repeatedly apply a voltage at a predetermined period (for example, 1.0 KHz) as shown in FIG. 4. The micro solid beads may be discharged at the same cycle through the 300, and the micro solid beads irradiated with the laser beam may generate EUV of high resolution. By varying the period of the voltage repeatedly applied to the plurality of electrodes 320 under the control of the controller 160, the micro solid beads irradiated with the laser beam may generate EUV of high resolution at a period of 1.0 to 40 KHz.

5 is a view for explaining the ball gun 500 according to another embodiment of the present invention.

Referring to FIG. 5, the bead gun 500 according to another embodiment of the present invention for application to the bead gun 120 of FIG. 1 may include a plurality of coils 520 mounted in the housing 510. .

As described above, the micro solid beads sent one by one from the storage container 110 may be accelerated while sequentially passing through the plurality of coils 520. The plurality of coils 520 receive a predetermined voltage (or current) from the controller 160, and thus the inlet of the ball gun 500 by an electromagnetic field formed by each of the plurality of coils 520. The accelerated micro solid beads may be accelerated and the accelerated micro solid beads may be discharged through the discharge holes of the bead gun 500 while sequentially passing through the plurality of coils 520.

For example, as shown in FIG. 5, the micro solid beads entering the inlet of the ball gun 500 are accelerated by an electromagnetic field formed by the first coil of the plurality of coils 520, and then the micro solid beads are followed by another coil. It can be accelerated in the form of being dragged by a plurality). The micro solid beads may be regarded as magnetic materials having weak magnetic properties, and the micro solid beads may be accelerated by an electromagnetic field formed according to a voltage (or current) in a pulse form applied to the plurality of coils 520.

As illustrated in FIG. 6, the controller 160 may sequentially apply necessary pulse voltages (or currents) to the plurality of coils 520. For example, positive pulse voltages (or currents) may be applied to both ends of the first coil of the plurality of coils 520 for a predetermined time. Accordingly, the micro solid beads, which are weak magnetic bodies entering the inlet of the bead gun 500, Accelerated by the electromagnetic field formed by the first coil, it is possible to further accelerate by pulling the micro solid beads as positive pulse voltages (or currents) are sequentially applied to subsequent other coils over time. The reverse case can be operated similarly. For example, negative pulse voltages (or currents) may be sequentially applied to the plurality of coils 520 at predetermined times.

Here, the control device 160 may repeatedly apply the pulsed voltage at a predetermined period (for example, 1.0 KHz) as shown in FIG. 6 in sequentially applying the necessary voltages to the plurality of coils 520. Accordingly, the micro solid beads may be discharged at the same cycle through the bead gun 500, and the micro solid beads irradiated with the laser beam may generate high resolution EUV. By varying the period of the voltage repeatedly applied to the plurality of coils 520 under the control of the controller 160, the micro solid-state beads irradiated with the laser beam may generate EUV of high resolution at a period of 1.0 to 40 KHz.

8 is a diagram for describing an EUV generator 800 according to another exemplary embodiment of the present invention.

Referring to FIG. 8, the EUV generator 800 according to another embodiment of the present invention may include a storage container 110, an ultrasonic generator 111, a bead gun 120, a storage device 130, and a collector 150. , A control device 160, and an electron beam generation source 170. The EUV generator 800 may be operated in a vacuum state in which a certain degree of vacuum is maintained.

Here, instead of the laser generator 140 and the optical system 141 of FIG. 2, an electron beam is generated using the electron beam generator 170 having the two electrodes 171 and 172, and the micro solids are discharged from the bead gun 120. Irradiation with beads can be used to generate EUV by DPP (Discharge Produced Plasma) method. Here, the operation of the storage container 110, the ultrasonic generator 111, the ball gun 120, the storage device 130, the collector 150, the control device 160 is similar to the method described in Figures 2 to 7 It works.

As shown in FIG. 9, the electron beam generation source 170 receives plasma power in the form of RF (Radio Frequency) or DC (or AC) from the control device 160 to the two electrodes 171 and 172, and the two electrodes 171 and 172. The cathode (hot cathode or cold cathode) (not shown) mounted on any one or more of) may generate an electron beam directed to the opposite electrode. As such, the micro solid beads discharged from the bead gun 120 are passed between the two electrodes 171 and 172 of the electron beam generator 170, and at this time, at least one of the two electrodes 171 and 172 passes through the micro solid beads. By irradiating the generated electron beam, the micro solid beads irradiated with the electron beam can be excited and generate EUV. When an alternating voltage is applied to the two electrodes 171 and 172, an electron beam may be alternately directed toward the opposite electrode through the cathodes (hot cathode or cold cathode) mounted on the two electrodes 171 and 172, respectively.

Here too, depending on the material of the micro solid beads, the wavelength of the EUV may be in the range of 10 to 100 micrometers. EUV generated from the micro-solid beads are mainly emitted in a predetermined angle range, the curved mirror (mirror) of the collector 150 reflects the EUV generated from the micro-solid beads in a predetermined angle range as described above to collect to the target position.

As described above, the present invention has been described by way of limited embodiments and drawings, but the present invention is not limited to the above embodiments, and those skilled in the art to which the present invention pertains various modifications and variations from such descriptions. This is possible. Therefore, the scope of the present invention should not be limited to the described embodiments, but should be determined by the equivalents of the claims, as well as the claims.

100: EUV generator
110: storage container
111: ultrasonic generator
120: bead gun
130: storage
140: laser generator
150: collector
160: controller
171, 172: two electrodes of the electron beam generating source

Claims (11)

By accelerating the micro solid beads with a bead gun and irradiating a laser beam to the micro solid beads discharged through the discharge port of the bead gun,
EUV generator, characterized in that for collecting the EUV collected by reflecting the EUV of a certain angle range generated from the micro-solid beads irradiated by the laser beam to the curved mirror of the collector. Accelerating the micro solid beads with a bead gun to pass the micro solid beads discharged through the discharge port of the bead gun through the electron beam source,
EUV generator, characterized in that to collect the EUV collected by reflecting the EUV of a predetermined angle range generated from the micro-solid beads irradiated from the electron beam generating source to the curved mirror of the collector. The method of claim 1,
The ball gun includes a plurality of electrodes in the form of a ring for sequentially passing the micro solid beads,
EUV generator, characterized in that for accelerating the micro-solid beads by using an electric field formed by receiving a voltage from a control device. The method of claim 2,
An inlet of the bead gun is electrically connected to a first electrode of the plurality of electrodes such that the micro solid beads are charged by the first electrode, and the charged micro solid beads are at least one subsequent one of the plurality of electrodes Accelerated in the form of being pulled by another electrode,
Wherein said control device applies a voltage of different polarity to said first electrode and said at least one or more other electrodes. 5. The method of claim 4,
And said control device applies pulsed voltage sequentially to said plurality of electrodes. The method of claim 1,
The bead gun includes a plurality of coils for sequentially passing the micro solid beads,
EUV generator, characterized in that for accelerating the micro-solid beads by using an electromagnetic field formed by applying a voltage from a control device. The method according to claim 6,
And said control device applies pulsed voltage sequentially to said plurality of coils. The method of claim 1,
Ultrasonic generator for shaking the storage container at the outer side of the storage container to send the micro solid beads contained in the storage container to the inlet of the ball gun one by one
EUV generating apparatus comprising a. The method of claim 1,
The micro-solid beads are Sn, Li, Xe, or EUV generator, characterized in that the solid powder consisting of a compound containing any one or more thereof. Accelerate the micro solid beads,
By irradiating a laser beam on the accelerated micro solid beads,
EUV generation method characterized in that for collecting the EUV generated from the micro-solid beads irradiated with the laser beam. Accelerate the micro solid beads,
Irradiating an electron beam to the accelerated micro-solid beads,
EUV generation method, characterized in that for collecting the EUV generated in the micro-solid beads irradiated with the electron beam.
KR1020110046804A 2011-05-18 2011-05-18 Extreme Ultraviolet Generation Apparatus and Method for Application in Lithography Light Source KR20120128880A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220127198A (en) * 2020-07-22 2022-09-19 포항공과대학교 산학협력단 Apparatus and method for generating light source with range of specific wavelength

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220127198A (en) * 2020-07-22 2022-09-19 포항공과대학교 산학협력단 Apparatus and method for generating light source with range of specific wavelength
KR20220127200A (en) * 2020-07-22 2022-09-19 포항공과대학교 산학협력단 Apparatus and method for generating light source with range of specific wavelength
KR20220127199A (en) * 2020-07-22 2022-09-19 포항공과대학교 산학협력단 Apparatus and method for generating light source with range of specific wavelength
KR20220127197A (en) * 2020-07-22 2022-09-19 포항공과대학교 산학협력단 Apparatus and method for generating light source with range of specific wavelength
KR20220127779A (en) * 2020-07-22 2022-09-20 포항공과대학교 산학협력단 Apparatus and method for generating light source with range of specific wavelength

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