KR20120081655A - Photo mask containing halftone pattern and optical proximity correction pattern and method for fabricating thereof - Google Patents

Abstract

PURPOSE: A photo-mask and a manufacturing method thereof are provided to improve efficiency of an exposure process by reducing an optical proximity effect between photo-mask patterns and to evenly control the intensity of light passing through the photo-mask. CONSTITUTION: An optical proximity correction pattern(260) of slit shape is formed in a light-transmitting region which is contiguous to each sidewall of a plurality of light-shield patterns. The line width of the optical proximity correction pattern is 0.8 to 2micrometers. The light-transmitting region which includes the optical proximity correction pattern is filled with halftone patterns(240, 250) having one or more penetration ratios. The penetration ratio of the halftone pattern is 4 to 70% when the wavelength of incident light is 300 to 500nm.

Description

Photomask including halftone pattern and optical proximity correction pattern and manufacturing method thereof {PHOTO MASK CONTAINING HALFTONE PATTERN AND OPTICAL PROXIMITY CORRECTION PATTERN AND METHOD FOR FABRICATING THEREOF}

The present invention relates to a photo mask including a halftone pattern and an optical proximity correction pattern, and a method of manufacturing the same. More particularly, the present invention relates to an exposure apparatus of a proximity type for manufacturing a color filter of an LCD. By forming a halftone pattern and a light proximity correction pattern in a photo mask, the present invention relates to a technique for improving intensity uniformity and improving efficiency of an exposure process.

Generally, when manufacturing a semiconductor device, an electronic device, a photoelectric device, a magnetic device, a display device, a microelectromechanical device, etc., a process of forming a fine pattern on a substrate is inevitably performed.

There are many methods for forming a fine pattern on a substrate, but a representative method is a photo lithography method for forming a fine pattern using light.

A method of forming a fine pattern on a substrate using the photolithography method described above is as follows.

First, a polymer material (eg, photoresist, etc.) having a reactivity to light is applied onto a substrate on which a material to be patterned is laminated (or deposited). Next, light is transmitted through the reticle designed in an arbitrary pattern of interest to expose the polymer material.

After exposure, the photomask having the target pattern is formed on the material to be patterned by removing the polymer material exposed through the developing process.

After forming the photo mask, an etching process using the formed photo mask is performed to pattern the material stacked on the substrate in a desired pattern.

Here, the exposure equipment used in the photolithography process may be divided into a projection type exposure equipment and a proximity type exposure equipment.

First, in a projection type exposure apparatus, a condenser lens is positioned at the top of the photo mask, a projection lens is positioned at the bottom, and a substrate having a photoresist is disposed at the bottom of the projection lens. It is a structure that is located.

Next, in the proximity type exposure apparatus, a condenser lens is positioned on the upper side of the photo mask, and a substrate on which the photoresist exists is positioned directly on the lower side of the photo mask.

Such a proximity type exposure apparatus has a risk of contamination and breakage of the photomask and photoresist by contact between the photomask and the substrate. Therefore, the exposure process is performed while maintaining the interval of about 50 ~ 300㎛.

As a result, an optical proximity effect occurs due to diffraction and interference of light passing through the pattern at the pattern boundary of the photomask.

In this case, the optical proximity effect refers to a phenomenon in which the pattern of the exposed photoresist is not formed as a desired pattern due to uneven intensity due to diffraction and interference of light at the pattern boundary.

In addition, when the intensity is not uniform, the photoresist may not remain at a certain thickness, thereby causing a problem in that pattern formation is not normally performed. This optical proximity effect occurs when the gap between the photomask and the photoresist is greater and a pattern of a deformed form is formed unlike the designed pattern.

According to an embodiment of the present invention, a slit-shaped optical proximity correction pattern is formed in a light transmission region adjacent to each sidewall of a plurality of light shielding patterns formed on an upper portion of the transparent substrate, and at least one halftone pattern is formed in a transmission region including the optical proximity correction pattern. It is an object of the present invention to provide a photomask that can reduce the optical proximity effect between the photomask patterns by embedding.

In addition, the present invention, when forming the photo mask, when the wavelength of the incident light is 300 to 500nm, using a transmittance of 4 to 70%, the thickness for changing the phase of the incident light to 60 ° or less It is an object of the present invention to provide a photomask manufacturing method in which the intensity of light passing through the photomask can be uniformly adjusted.

In a photomask manufacturing method according to an embodiment of the present invention, in a photomask applied to perform an exposure type of proximity type, a light proximity correction pattern is formed on at least one region adjacent to a light shielding pattern of the photomask. Characterized in that formed.

Here, the photomask is a binary mask or a halftone mask, characterized in that the mask for manufacturing the LCD column spacer.

A method of manufacturing a photomask according to an embodiment of the present invention is a method of manufacturing a photomask including a plurality of light blocking patterns formed on an upper portion of a transparent substrate and a light transmitting region defined by the plurality of light blocking patterns. A slit-shaped optical proximity correction pattern is formed in the transmission region adjacent to each sidewall of the light shielding pattern, and the transmission region including the optical proximity correction pattern is one or more halftone patterns having one or more transmittances. It is characterized by filling.

Here, the optical proximity correction pattern is formed to a size less than the resolution limit of the exposure equipment using the mask, the line width of the optical proximity correction pattern is formed with a line width of 0.8 ~ 2㎛, 2 from the sidewall of the light shielding pattern It is preferable to form in a region ˜4 μm apart.

In addition, the halftone pattern has a transmittance of 4 to 70% when the wavelength of incident light is 300 to 500 nm, but is preferably formed to a thickness that changes the phase of incident light to 60 ° or less.

In addition, the method of manufacturing a photomask according to another embodiment of the present invention comprises the steps of (a) forming a light shielding layer on the entire surface of the transparent substrate, (b) forming a photosensitive film on the light shielding layer, and (c) the photosensitive film Forming a photosensitive pattern defining a color filter pattern of the LCD and a slit-shaped optical proximity correction pattern formed in an area adjacent to each side wall of the color filter pattern; and (d) Etching the light shielding layer with a mask to form a light shielding pattern and a light proximity correction pattern; (e) removing the photosensitive pattern; and (f) the transparent light shielding pattern and a light proximity correction pattern. And forming a halftone pad layer having a transmittance of 4 to 70% when the wavelength of incident light is 300 to 500 nm on the front surface of the substrate.

In addition, the method of manufacturing a photomask according to another embodiment of the present invention comprises the steps of (a ') forming a light shielding layer on the entire surface of the transparent substrate, (b') forming a first photoresist film on the light shielding layer, (c ') exposing and developing the first photosensitive film to form a first photosensitive pattern defining a color filter pattern of the LCD and an optical proximity correction pattern having a slit shape formed in an area adjacent to each sidewall of the color filter pattern; (D ') etching the light shielding layer using the first photosensitive pattern as a mask to form a light shielding pattern and a light proximity correction pattern; (e') removing the first photosensitive pattern; (f ') forming a first halftone pad layer having a transmittance of 4 to 70% when the wavelength of incident light is 300 to 500 nm on the front surface of the transparent substrate including the light blocking pattern and the optical proximity correction pattern; g ') forming a second photoresist film on the first halftone pad layer, and (h' Exposing and developing the second photosensitive film to form a second photosensitive pattern exposing a portion of the light blocking pattern and the optical proximity correction pattern; and (i ') the light blocking pattern exposing the second photosensitive pattern as a mask. And forming a second halftone pad layer having a transmittance different from that of the first halftone pad layer within the transmittance range of the step (f ′) on the entire surface of the transparent substrate including an optical proximity correction pattern; and (j ') Removing the second photosensitive pattern; and (k') planarizing the first halftone pad layer and the second halftone pad layer to expose the upper portion of the light blocking pattern and the optical proximity correction pattern. It is characterized by.

In addition, the method of manufacturing a photomask according to another embodiment of the present invention is a step of forming a halftone pad layer having a transmittance of 4 to 70% when the wavelength of incident light is 300 to 500 nm on the entire surface of the (a '') transparent substrate. And (b '') forming a light shielding layer over the halftone pad layer, (c '') forming a photoresist film over the light shielding layer, and (d '') exposing and developing the photosensitive film. Forming a photosensitive pattern defining a color filter pattern of the LCD and a slit-shaped optical proximity correction pattern formed in an area adjacent to each sidewall of the color filter pattern; and (e '') using the photosensitive pattern as a mask. Etching the light shielding layer to form a light shielding pattern and a light proximity correction pattern.

In addition, the photo mask for manufacturing a color filter of the LCD according to an embodiment of the present invention is manufactured by any one of the above-described methods, the area adjacent to each sidewall of the plurality of light shielding patterns of the light transmission areas defined by a plurality of light shielding patterns. An optical proximity correction pattern having a slit shape is formed, and at least one halftone pattern having one or more transmittances is formed in the transmissive region including the optical proximity correction pattern.

The photo mask according to the present invention includes a slit-shaped optical proximity correction pattern formed in a transmission region adjacent to each of the sidewalls of the plurality of light blocking patterns formed on the transparent substrate, and formed in the transmission region including the optical proximity correction pattern. By including one or more kinds of halftone patterns, the optical proximity effect between the photomask patterns can be reduced, and a mask optimized for a color filter manufacturing process for LCDs using an exposure type device can be provided. Therefore, the use of the photomask according to the present invention provides an effect of improving the exposure process efficiency and increasing the uniformity of the exposure pattern formed on the substrate.

In addition, the method of manufacturing a photomask according to the present invention, in forming the photomask, when the wavelength of incident light is 300 to 500 nm, the transmittance is 4 to 70%, but the phase of incident light is 60 The photomask can be easily manufactured by forming it with a thickness that changes below °, so that the intensity of the light passing through the photomask can be uniformly adjusted. Therefore, when using the photomask manufacturing method according to the present invention, it provides an effect that can reduce the mask manufacturing cost.

1 is a schematic cross-sectional view of an exposure apparatus of proximity type and an exposure process using the same.
2 is a cross-sectional view illustrating a halftone mask used in a proximity type exposure apparatus.
3 is a plan view showing a photo mask used in the proximity type exposure apparatus.
4 is a planar photograph showing the intensity of the light passing through the transmissive region in the mask of FIG. 3.
FIG. 5 is a graph illustrating the intensity along the AA ′ direction of FIG. 4.
6 is a cross-sectional view illustrating a photomask and a method of manufacturing the same according to an embodiment of the present invention.
7 is a plan view illustrating a photomask and a method of manufacturing the same according to an embodiment of the present invention.
FIG. 8 is a plan view showing the intensity of the light passing through the transmissive area in the mask of FIG.
FIG. 9 is a graph illustrating the intensity along the BB ′ direction of FIG. 8.
10 is a cross-sectional view showing a photomask and a method of manufacturing the same according to another embodiment of the present invention.
11 is a cross-sectional view illustrating a photomask and a method of manufacturing the same according to still another embodiment of the present invention.

Hereinafter, a photo mask including the halftone pattern and the optical proximity correction pattern of the present invention and a manufacturing method thereof will be described in detail.

Advantages and features of the present invention and methods for achieving them will be apparent with reference to the embodiments and drawings described below in detail. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in various different forms, only the embodiments are to make the disclosure of the present invention complete, it is common in the art It is provided to fully inform those skilled in the art of the scope of the invention, which is to be defined only by the scope of the claims.

According to the present invention, a photomask manufacturing method includes forming an optical proximity correction pattern in at least one region adjacent to a light shielding pattern of the photomask in a photomask applied to performing an exposure process of a proximity type.

First, the exposure equipment of the proximity type (Proximity Type) used in the present invention will be described.

1 is a schematic cross-sectional view of an exposure apparatus of proximity type and an exposure process using the same.

Referring to FIG. 1, light 10 emitted from a light source (not shown) is irradiated to a substrate 40 coated with a photoresist through a photo mask 20 directly without passing through a projection lens.

At this time, if the photomask 20 is in direct contact with the substrate 40, the photomask 20 may be contaminated or damaged by the photoresist. Therefore, the light 10 is irradiated while keeping the space | interval between the photomask 20 and the board | substrate 40 about 50-300 micrometers.

However, if the spacing is too wide, the intensity 30 of the light 10 passing through the photo mask 20 may appear unevenly.

It can be seen that the optical proximity effect occurs at the boundary between the light blocking area and the light transmitting area of the photo mask. The optical proximity effect refers to unwanted light interference (compensation, offset) where light 10 is transmitted or not to be transmitted by light diffraction.

That is, no intensity should appear under the region where the light shielding pattern of the photo mask is formed, and the intensity of the intensity should be extremely high under the region where the light emission pattern is formed to facilitate the formation of the photoresist pattern. However, if the intensity appears unevenly, since the entire photoresist is unevenly exposed, pattern formation may not be performed normally.

Therefore, in the present invention, an attempt was made to homogenize the intensity by applying a halftone pattern to the light-transmitting region.

2 is a cross-sectional view illustrating a halftone mask used in a proximity type exposure apparatus.

Referring to FIG. 2, a plurality of light blocking patterns 130 are present on the transparent substrate 120 as a photo mask 100 used in exposure equipment of a proximity type, but only a light transmitting pattern, which is a binary mask region, exists. A photomask 100 including a portion 150 and a portion 140 in which a halftone pattern, which is a halftone mask region, exist.

3 is a plan view illustrating a photomask 100 used in the proximity type exposure apparatus provided as described above.

Referring to FIG. 3, it may be divided into a portion 52 in which only a light transmission pattern exists and a portion 53 in which a halftone pattern exists.

Next, FIG. 4 is a plan view showing the intensity of the light passing through the light transmitting area in the mask of FIG. 3.

FIG. 4 illustrates the intensity of the halftone pattern in the transmissive region, in particular, even though the halftone pattern is applied to solve the intensity irregularity that may occur in the transmissive region. You can see it appear in form.

This indicates that the shape of the photoresist pattern by the photo mask is not completely formed, which can be clearly seen through the following graph.

FIG. 5 is a graph illustrating the intensity along the AA ′ direction of FIG. 4.

Referring to FIG. 5, it can be seen that the intensity of the intensity is not evenly distributed toward both ends of the center portion, and the phenomenon of appearing higher or lower than the center portion occurs repeatedly.

As a result, an intensity imbalance of ΔIntensity_1 is generated, which results in a pattern in which the photoresist has an uneven flatness in the pattern.

Therefore, in the present invention, in order to completely control the optical proximity effect, the optical proximity correction pattern is additionally applied to the portion where the halftone pattern is formed.

6 is a cross-sectional view illustrating a photomask and a method of manufacturing the same according to an embodiment of the present invention.

Referring to FIG. 6, the photomask 200 according to the present invention includes a light shielding pattern 230 formed on the transparent substrate 200, and includes a first halftone pattern in each of the light transmission regions defined by the light shielding pattern 230. It can be seen that the reference numeral 250 has the first optical proximity correction pattern 260, the second halftone pattern 240, and the second optical proximity correction pattern 270.

In this case, the light shielding pattern is a pattern defining a column spacer used in the color filter, and has a uniform spacing and a uniform pattern.

Therefore, although the first optical proximity correction pattern and the second optical proximity correction pattern are illustrated in the same form, the present invention is not limited thereto.

Next, referring to the specific manufacturing method, a plurality of light shielding patterns 230 are formed on the transparent substrate 220, and the SLR-shaped optical proximity correction pattern 260 is formed in the light transmitting region adjacent to each sidewall of the light shielding pattern 230. , 270, and fill one or more halftone patterns 240 and 250 having the same or different transmittances in the respective transmissive regions including the optical proximity correction patterns 260 and 270.

Here, the line widths of the optical proximity correction patterns 260 and 270 are each formed with a line width of 0.8 to 2 μm, but are preferably formed to a size below the resolution limit of the exposure equipment to which the photomask is to be used.

When the optical proximity correction pattern is formed to a size of less than 0.8㎛, the optical proximity correction effect may hardly appear. When the optical proximity correction pattern is formed to a line width exceeding 2㎛, the optical proximity correction pattern is formed to exceed the resolution limit of the exposure equipment. It may appear as a pattern.

In addition, the position where the optical proximity correction pattern is to be formed is preferably formed in a region 2 to 4㎛ away from the sidewall of the light shielding pattern. When the optical proximity correction pattern is formed so close to the light shielding pattern that is less than 2 μm, the light proximity correction pattern may be combined with the light shielding pattern to result in the distortion of the pattern shape. On the contrary, when the optical proximity correction pattern is formed at a distance exceeding 4 μm, the optical proximity correction effect may hardly appear.

In addition, in the halftone pattern, the transmittance and the phase of incident light change according to the material and thickness thereof.

In this case, the halftone patterns 240 and 250 have a transmittance of 4 to 70% when the wavelength of incident light is 300 to 500 nm and a material and thickness that can change the phase of incident light to 60 ° or less. It is advantageous to secure it.

At this time, the incident light wavelength of 300 ~ 500nm is the main wavelength used in the exposure type of the proximity type (Proximity Type), especially the wavelength optimized for color filter manufacturing of LCD.

Here, when the transmittance range is less than 4% or more than 70%, or when the phase change of incident light exceeds 60 °, intensity uniformity as shown in FIG. 9 could not be obtained.

Hereinafter, the intensity uniformity according to the present invention will be described with reference to specific examples according to the present invention.

7 is a plan view illustrating a photomask and a method of manufacturing the same according to an embodiment of the present invention.

Here, the planar shape shown in FIG. 7 has the same structure as the cross section shown in FIG. In addition, since the pattern formation method method using the photoresist (hereinafter photosensitive film) demonstrated below follows a general photomask manufacturing process, it abbreviate | omits a specific figure.

First, as an embodiment for preparing a sample for measuring the intensity uniformity, first, a light shielding layer is formed on the transparent substrate.

Next, a first photoresist film is formed on the light shielding layer, and the first photoresist film is exposed and developed to form a color filter pattern of the LCD and a slit type optical proximity correction pattern formed in an area adjacent to each sidewall of the color filter pattern. To form a first photosensitive pattern defining.

In this case, the color filter pattern refers to a dark part except for rectangular areas arranged in parallel in FIG. 7. In addition, the optical proximity correction pattern refers to thin lines respectively formed in the quadrangle.

Next, the light blocking layer is etched using the first photosensitive pattern as a mask to form a light blocking pattern and a light proximity correction pattern.

Next, the first photosensitive pattern is removed, and a first halftone pad layer is formed on the entire surface of the transparent substrate including the light blocking pattern and the optical proximity correction pattern.

Next, a second photosensitive film is formed on the first halftone pad layer, and the second photosensitive film is exposed and developed to form a second photosensitive pattern exposing a part of the light shielding pattern and the optical proximity correction pattern. In this case, part of the first optical proximity correction pattern 260 of FIG. 6 is formed. Thus, in FIG. 7, the left quadrangle portion 52 is formed.

Next, a second halftone pad layer is formed on the entire surface of the transparent substrate using the second photosensitive pattern as a mask, and the second photosensitive pattern is removed.

Next, as shown in FIG. 6, the first halftone pad layer and the second halftone pad layer are planarized to expose the upper portion of the light shielding pattern and the optical proximity compensation pattern, so that the first halftone pattern 250 and the second halftone pattern layer are planarized. The halftone pattern 240 is formed.

As described above, in the present invention, a uniform intensity can be obtained by manufacturing a photomask in which the optical proximity correction pattern and the halftone pattern are simultaneously formed in the transmissive region.

FIG. 8 is a plan view showing the intensity of the light passing through the transmissive area in the mask of FIG.

Comparing the intensity picture of FIG. 8 with the intensity picture of FIG. 4, it can be seen that the corner portions of the rectangle are clearly distinguished.

That is, it can be clearly seen that the difference in brightness due to the optical proximity effect at the boundary portion is small. Looking at this intensity in more detail, the following graph appears.

FIG. 9 is a graph illustrating the intensity along the BB ′ direction of FIG. 8.

Referring to FIG. 9, it can be seen that the difference ΔIntensity_2 compared to the center of the pattern is significantly reduced than the intensity difference ΔIntensity_1 of FIG. 5.

More specifically, since ΔIntensity_1 is about 0.31 and ΔIntensity_2 is represented by 0.17, it can be seen that the photomask according to the present invention has an improvement in intensity uniformity of at least 34% or more.

Although the embodiment of the photomask according to the present invention described above includes two types of halftone patterns having different transmittances, the present invention has one type of halftone pattern as shown in FIGS. 10 and 11. It also includes the case of using.

First, referring to the photo mask 300 of FIG. 10, when the wavelength of incident light is 300 to 500 nm on the front surface of the transparent substrate 320, the halftone pad layer 340 having a transmittance of 4 to 70% is formed.

Next, a light shielding layer is formed directly on the halftone pad layer 340 without a separate halftone pad layer etching process, and is formed in an area adjacent to each sidewall of the color filter pattern and the color filter pattern of the LCD on the light shielding layer. A photosensitive pattern defining a light proximity correction pattern having a slit shape is formed.

Next, the light blocking layer is etched using the photosensitive pattern as a mask to form the light blocking pattern 330 and the light proximity correction patterns 360 and 370 formed on the halftone pad layer 340.

Next, referring to the photomask 400 of FIG. 11, the light shielding pattern 430 and the optical proximity compensation patterns 460 and 470 are first formed on the transparent substrate 420, and the halftone pad layer ( It can be seen that 440 is formed.

In addition, although the halftone pad layers 340 and 440 are respectively formed on the entire surface of the mask in the photomasks of FIGS. 10 and 11, the binary mask includes only a light blocking pattern.

Therefore, the present invention is not limited to the photo mask partially shown as above.

As described above, the photo mask of FIGS. 10 and 11 is also a photo mask for manufacturing a color filter of an LCD, and includes a plurality of light blocking patterns, and an area adjacent to each sidewall of the plurality of light blocking patterns among light transmitting areas defined by the light blocking pattern. An optical proximity correction pattern in the form of a slit is formed, and a halftone pattern is formed in the transmissive area including the optical proximity correction pattern.

Therefore, the same intensity uniformity as described in FIG. 9 can be secured.

As described above, the photo mask according to the present invention includes a slit type optical proximity correction pattern formed in a light transmitting region adjacent to each sidewall of the plurality of light blocking patterns formed on the transparent substrate, and includes a optical proximity correction pattern. By including one or more kinds of halftone patterns formed in the light-transmitting area to reduce the optical proximity effect between the photo mask patterns, it is possible to provide a mask optimized for the color filter manufacturing process for LCD using the proximity type exposure apparatus. have. Therefore, when using the photo mask as described above it is possible to improve the exposure process efficiency.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood by those skilled in the art that the present invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive.

10: light
30: Intensity
40: substrate
20, 100, 200, 300, 400: photo mask
120, 220, 320, 420: transparent substrate
130, 230, 330, 430: shading pattern
140: portion where the halftone pattern exists
240: second halftone pattern
250: first halftone pattern
260, 360, 460: first optical proximity correction pattern
270, 370, 470: second optical proximity correction pattern
340, 440: halftone pad layer

Claims (13)

A photomask applied to performing a proximity type exposure process, wherein the photomask manufacturing method comprises forming a photo proximity correction pattern in at least one region adjacent to the light shielding pattern of the photomask.
The method of claim 1,
The photomask is
It is a binary mask or a halftone mask, The manufacturing method of the photomask characterized by the above-mentioned.
The method of claim 1,
The photomask is
It is a mask for manufacturing an LCD column spacer, The photomask manufacturing method characterized by the above-mentioned.
In the method of manufacturing a photo mask comprising a plurality of light shielding patterns formed on the transparent substrate and a light transmitting region defined by the plurality of light shielding patterns,
Forming a slit-shaped optical proximity correction pattern in the transmissive area adjacent to each of the sidewalls of the light blocking patterns;
And filling the transmissive region including the optical proximity correction pattern with at least one halftone pattern having at least one transmittance.
The method of claim 4, wherein
The optical proximity correction pattern is
And forming a mask having a size less than or equal to the resolution limit of the exposure apparatus in which the mask is used.
The method of claim 5,
The line width of the optical proximity correction pattern is
A line mask having a line width of 0.8 to 2 µm and formed in a region 2 to 4 µm away from the sidewall of the light shielding pattern.
The method of claim 4, wherein
The halftone pattern is
The transmittance | permeability is 4 to 70% when the wavelength of incident light is 300-500 nm. The photomask manufacturing method characterized by the above-mentioned.
The method of claim 4, wherein
The halftone pattern is
A photomask manufacturing method, characterized in that it is formed to a thickness that changes the phase of incident light to 60 ° or less.
(a) forming a light shielding layer on the entire surface of the transparent substrate;
(b) forming a photoresist film on the light shielding layer;
(c) exposing and developing the photoresist film to form a photoresist pattern defining a color filter pattern of the LCD and a slit-shaped optical proximity correction pattern formed in an area adjacent to each sidewall of the color filter pattern;
(d) etching the light blocking layer using the photosensitive pattern as a mask to form a light blocking pattern and a light proximity correction pattern;
(e) removing the photosensitive pattern;
(f) forming a halftone pad layer having a transmittance of 4 to 70% when the wavelength of incident light is 300 to 500 nm on the front surface of the transparent substrate including the light blocking pattern and the optical proximity correction pattern. Photomask manufacturing method.
(a ') forming a light shielding layer on the entire surface of the transparent substrate;
(b ') forming a first photoresist film on the light shielding layer;
(c ') exposing and developing the first photosensitive film to form a first photosensitive pattern defining a color filter pattern of the LCD and an optical proximity correction pattern having a slit shape formed in an area adjacent to each sidewall of the color filter pattern; step;
(d ') forming the light blocking pattern and the optical proximity compensation pattern by etching the light blocking layer using the first photosensitive pattern as a mask;
(e ') removing the first photosensitive pattern;
(f ') forming a first halftone pad layer having a transmittance of 4 to 70% when a wavelength of incident light is 300 to 500 nm on the front surface of the transparent substrate including the light blocking pattern and the optical proximity correction pattern;
(g ') forming a second photoresist film on the first halftone pad layer;
(h ') exposing and developing the second photosensitive film to form a second photosensitive pattern exposing a portion of the light blocking pattern and the optical proximity correction pattern;
(i ') different from the first halftone pad layer within the transmittance range of step (f') on the entire surface of the transparent substrate including the light blocking pattern and the optical proximity correction pattern exposing the second photosensitive pattern as a mask; Forming a second halftone pad layer having a transmittance;
(j ') removing the second photosensitive pattern; And
and (k ') planarizing the first halftone pad layer and the second halftone pad layer so that the upper portion of the light blocking pattern and the optical proximity compensation pattern are exposed.
(a '') forming a halftone pad layer having a transmittance of 4 to 70% when the wavelength of incident light is 300 to 500 nm on the front surface of the transparent substrate;
(b '') forming a light shielding layer on the halftone pad layer;
(c ″) forming a photoresist film on the light shielding layer;
(d '') exposing and developing the photosensitive film to form a photosensitive pattern defining a color filter pattern of the LCD and a slit-shaped optical proximity correction pattern formed in an area adjacent to each sidewall of the color filter pattern; And
(e '') etching the light blocking layer using the photosensitive pattern as a mask to form a light blocking pattern and a light proximity correction pattern.
The method according to any one of claims 9 to 11,
The halftone pattern is
A photomask manufacturing method, characterized in that it is formed to a thickness that changes the phase of incident light to 60 ° or less.
The optical proximity correction pattern having a slit shape is formed in an area adjacent to each sidewall of the plurality of light blocking patterns among the light transmission areas defined by the plurality of light blocking patterns. And at least one halftone pattern having at least one transmittance in the transmissive region including the optical proximity correction pattern.

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