KR20120080957A - Light emitting diode with high efficiency - Google Patents

Light emitting diode with high efficiency Download PDF

Info

Publication number
KR20120080957A
KR20120080957A KR1020110002446A KR20110002446A KR20120080957A KR 20120080957 A KR20120080957 A KR 20120080957A KR 1020110002446 A KR1020110002446 A KR 1020110002446A KR 20110002446 A KR20110002446 A KR 20110002446A KR 20120080957 A KR20120080957 A KR 20120080957A
Authority
KR
South Korea
Prior art keywords
layer
semiconductor layer
type semiconductor
light emitting
emitting diode
Prior art date
Application number
KR1020110002446A
Other languages
Korean (ko)
Inventor
홍성훈
Original Assignee
서울옵토디바이스주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 서울옵토디바이스주식회사 filed Critical 서울옵토디바이스주식회사
Priority to KR1020110002446A priority Critical patent/KR20120080957A/en
Publication of KR20120080957A publication Critical patent/KR20120080957A/en

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)

Abstract

Provide a high efficiency light emitting diode.
The present invention is a substrate; A semiconductor layer in which an n-type semiconductor layer, an active layer, and a p-type semiconductor layer are sequentially stacked on the substrate; And a nano metal pattern formed in a repetitive strip pattern on the p-type semiconductor layer.
The present invention also provides a metal support layer; A reflective electrode layer formed on the metal support layer; A semiconductor layer in which a p-type semiconductor layer, an active layer, and an n-type semiconductor layer are sequentially stacked on the reflective film electrode layer; And a nano metal pattern formed in a repeating strip pattern on the n-type semiconductor layer.

Description

Light Emitting Diode with high efficiency

The present invention relates to a high efficiency light emitting diode, and to a high efficiency light emitting diode using a surface plasmon resonance phenomenon by forming a nano metal pattern having a thickness and width of nano units on a semiconductor layer or a transparent electrode.

In general, the light emitting diode forms a transparent conductive layer on one side of the epi layer in order to efficiently emit light generated therein to the outside and to be used as an electrode to which power is applied from the outside. As such a transparent conductive layer, a transparent conducting oxide (ITO), such as indium tin oxide (ITO), which is a material that transmits light in the visible region and is transparent to a human eye and exhibits good electrical conductivity, is used. .

However, such ITO causes a large Schottky barrier to show high resistance and forward voltage, and In, a main component, is a rare element and has a high price. In order to replace such ITO, materials such as ZnO and AAO (Anodic Aluminum Oxide) are used, but they are not yet able to replace ITO in terms of performance and function.

On the other hand, when the light emitting diode emits light, the light incident on the transparent conductive layer due to the difference in refractive index between the semiconductor material such as the transparent conductive layer of the light emitting diode and the air is reflected to the inside without being emitted to the outside at a predetermined angle. Many techniques have been used to prevent such reflections inside and increase the amount of light emitted to the outside. For example, a method of improving light extraction efficiency by forming roughness on the surface of the ITO, which is a transparent electrode layer, and scattering effect due to roughness, a method of changing roughness to a predetermined shape and depth in p-GaN, and a photonic band Photonic Band Gap (PBC) method is a typical method.

However, these methods have difficulty in uniform mass production due to irregular shapes when forming roughness on the surface of the ITO, and the roughness change of p-GaN and PBC technology are very difficult to process and may adversely affect the electrical properties. There is this.

Accordingly, an object of the present invention is to solve the above problems, and an object thereof is to provide a high efficiency light emitting diode that does not require the use of a transparent electrode or an antireflection film such as ITO.

Another object of the present invention is to provide a high-efficiency light emitting diode capable of improving current spreading without the need for additional processes such as roughness formation on the transparent electrode or the anti-reflection film.

As a specific means for achieving the above object, the present invention,

Board;

A semiconductor layer in which an n-type semiconductor layer, an active layer, and a p-type semiconductor layer are sequentially stacked on the substrate; And

It relates to a high efficiency light emitting diode comprising a; nano-metal pattern formed in a repetitive strip pattern on the p-type semiconductor layer.

Further, according to the present invention,

Board;

A semiconductor layer in which an n-type semiconductor layer, an active layer, and a p-type semiconductor layer are sequentially stacked on the substrate;

A transparent electrode formed on the p-type semiconductor layer; And

It relates to a high efficiency light emitting diode comprising a; nano-metal pattern formed in a repetitive strip pattern on the transparent electrode.

Further, according to the present invention,

Metal support layers;

A reflective electrode layer formed on the metal support layer;

A semiconductor layer in which a p-type semiconductor layer, an active layer, and an n-type semiconductor layer are sequentially stacked on the reflective film electrode layer; And

It relates to a high efficiency light emitting diode comprising a; nano-metal pattern formed in a repeating strip pattern on the n-type semiconductor layer.

Further, according to the present invention,

Metal support layers;

A reflective electrode layer formed on the metal support layer;

A semiconductor layer in which a p-type semiconductor layer, an active layer, and an n-type semiconductor layer are sequentially stacked on the reflective film electrode layer;

An anti-reflection film electrode layer formed on the n-type semiconductor layer;

It relates to a high-efficiency light emitting diode comprising a; nano-metal pattern formed in a repetitive strip pattern on the anti-reflection film electrode layer.

In the present invention, the nano-metal pattern is preferably made of at least one of Au, Ag and Cu.

In addition, the nano-metal pattern is preferably formed of a composite layer of any one of Ni / Au, Pt / Au, Cr / Au, and Pd / Au.

In addition, the nano metal pattern is preferably formed on the p-type semiconductor layer through a metal layer made of any one of Cr, Ti, Ni, and Pt.

In addition, the nano-metal pattern in the present invention is preferably formed in a width of 1 ~ 100nm.

In addition, the nano metal pattern is preferably formed to a thickness of 1 ~ 100nm.

In addition, the nano metal pattern is preferably formed with a lattice constant of 2 ~ 100nm.

In the present invention, the strip pattern is preferably formed in one direction.

In addition, the strip pattern is preferably formed in a direction perpendicular to the one direction.

According to the present invention, by forming a nano-metal pattern having a thickness and width of nano units on a semiconductor layer or a transparent electrode to generate a surface plasmon resonance phenomenon to induce scattering and diffraction of light, to form a transparent electrode or an anti-reflection film such as ITO There is an effect that can improve the light extraction efficiency while replacing it without the need to use.

In addition, the present invention forms a nano-metal pattern having a thickness and width of nano units on the semiconductor layer or the transparent electrode to generate a surface plasmon resonance phenomenon to induce light scattering and diffraction, thereby forming roughness in the transparent electrode or the anti-reflection film There is an effect that can improve the current spreading and at the same time improve the light extraction efficiency without the need for additional processing.

1 is a cross-sectional view of a high efficiency light emitting diode according to a first embodiment of the present invention,
FIG. 2 is a plan view of the high efficiency light emitting diode of FIG. 1;
3 is a cross-sectional view for explaining the operation of the nano-metal pattern of FIG.
4 is a cross-sectional view of a high efficiency light emitting diode according to a second embodiment of the present invention;
5 is a plan view of the high efficiency light emitting diode of FIG.
6 is a cross-sectional view of a high efficiency light emitting diode according to a third embodiment of the present invention;
FIG. 7 is a plan view of the high efficiency light emitting diode of FIG. 6;
8 is a cross-sectional view of a high efficiency light emitting diode according to a fourth embodiment of the present invention;
9 is a plan view of the high-efficiency light emitting diode of FIG. 8.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.

First, a high efficiency light emitting diode according to an embodiment of the present invention will be described with reference to FIGS. 1 to 3.

1 is a cross-sectional view of a high efficiency light emitting diode according to a first embodiment of the present invention, FIG. 2 is a plan view of the high efficiency light emitting diode of FIG. 1, and FIG. 3 is a cross-sectional view for explaining the operation of the nanometal pattern of FIG. 1.

The high efficiency light emitting diode 10 is a horizontal light emitting diode, and the substrate 110, the n-type semiconductor layer 120, the active layer 130, and the p-type semiconductor layer 140 that are sequentially stacked on the substrate 110, p. The nano-metal pattern 150 formed in a repetitive strip pattern on the type semiconductor layer 140, the p-type electrode 160 formed on one side of the p-type semiconductor layer 140, and the n-type semiconductor layer 120 It includes an n-type electrode 170 formed on one side.

The substrate 110 may be a sapphire substrate in consideration of lattice matching with the nitride semiconductor material grown thereon. Such sapphire substrates are relatively easy to grow nitride semiconductor materials, and are mainly used because they are stable at high temperatures. However, in the present embodiment, the substrate 110 is not limited to the sapphire substrate, but may be a substrate made of any one of SiC, Si, GaN, and AlN.

The n-type semiconductor layer 120 is formed of n-type Al x In y Ga 1-xy N (0 ≦ x, y, x + y ≦ 1), and may be formed of a nitride semiconductor doped with an n-type dopant. For example, a dopant such as Si, Ge, Se, Te, or C is doped into a nitride semiconductor such as GaN, AlGaN, InGaN.

The active layer 130 is a region in which electrons and holes are recombined to emit light, and the wavelength of the extracted light is determined according to the type of the material forming the active layer 130. The active layer 130 may have a multi-quantum well (MQW) structure or a single quantum well structure. The barrier layer and the well layer may be formed of general Al x In y Ga 1-xy N (0 ≦ x, y, As a binary to quaternary compound semiconductor layer represented by x + y ≦ 1), for example, an InGaN layer is used as a well layer, and a GaN layer is grown as a barrier layer to form a multi-quantum well structure (MQW).

The p-type semiconductor layer 140 is formed of p-type Al x In y Ga 1-xy N (0 ≦ x, y, x + y ≦ 1), and may be formed of a semiconductor material doped with a p-type dopant. For example, a dopant such as Mg, Zn or Be is doped into a nitride semiconductor such as GaN, AlGaN, InGaN.

The nano metal pattern 150 is a strip pattern in nano units, and is formed in a repetitive strip pattern on one side of the p-type electrode 160 on the p-type semiconductor layer 140.

As shown in FIG. 2A, the nano metal pattern 150 may have a strip pattern formed between the p-type electrode 160 and the electrode extension 162, for example, in one horizontal direction. . In addition, as shown in FIG. 2B, the nano-metal pattern 150 has one direction perpendicular to the p-type electrode 160 and the electrode extension 162, for example, a horizontal direction and a vertical direction. A strip pattern in the form of a matrix may be formed.

The nano metal pattern 150, as shown in Figure 3, is formed with a constant width (W) and thickness (T), for example, the width (W) is formed of 1 ~ 100nm, thickness It is preferable to form (T) in 1-100 nm. Here, the sum of the lattice constant γ of the nano metal pattern 150, that is, the width W of the nano pattern and the distance between the nano patterns is preferably 2 to 100 nm.

Surface plasmon resonance (SPR) or localized plasmon resonance (Localized SPR) is generated by the nano-metal pattern 150 having such a structure to induce scattering and diffraction of light. Here, the surface plasmon resonance phenomenon is a phenomenon in which the incident light is resonated with the surface plasmon wave and absorbed without being reflected when the light is incident at a specific angle on the medium in which the surface plasmon wave (SPW) is present. This is due to the surface plasmon wave, a collective vibration phenomenon of electron density occurring in the boundary layer between two media with different dielectric constants, for example, metal and dielectric (air).

That is, as shown in Figure 3, when the light is incident on the nano-metal pattern 150, the free electrons in the nano-metal pattern 150 is moved and dielectrically constrained by the matrix phase, causing a large dipole moment, Induced giant dipole moment again serves to increase the size of the local electric field around the nano-metal pattern 150. The collective behavior of free electron clouds in the nano metal pattern 150 due to the dielectric confinement effect is quantized with a natural frequency. As such, when the surface plasmon resonance phenomenon occurs, the reflectance of the light corresponding to the resonance wavelength band is rapidly decreased, and thus the light absorption is greatly increased. As a result, the transmission and reflection characteristics of the nanometal pattern 150 are also corresponding characteristics. Indicates. In this case, the wavelength and light absorption characteristics of the light generated by the surface plasmon resonance depend on the particle size, shape, and volume fraction of the nano metal pattern 150, the refractive index of the dielectric layer (air or sealant), and the wavelength of the incident light. Since it is changed to, the nano-metal pattern 150 is formed in consideration of this.

In addition, the nano metal pattern 150 is a material capable of exciting the surface plasmon or local surface plasmon, for example, Au, Ag, Cu Al, Pt, Pd, Ni, Co, Fe, Mn, Cr, Mo, It is composed of a metal selected from W, V, Ta, Nb, Hf, Zr, Ti, Zn, In, Sn, Pb, Sb, Bi, and alloys thereof. Preferably, the optical properties are drought in the visible and near infrared wavelength ranges. It is defined as a free electron model, and the absorption loss of the metal itself is small, so that the attenuation of the surface plasmon is small and may be made of at least one of Au, Ag, and Cu having sharp resonance characteristics. In addition, the nano-metal pattern 150 may be formed of a metal composite layer, wherein the metal composite layer is formed of a metal having a large work function because the work function of the p-type semiconductor layer 140 is large. The upper layer is made of a metal with a small work function. For example, the nano metal pattern 150 may be formed of a composite layer of any one of Ni / Au, Pt / Au, Cr / Au, and Pd / Au. The nano metal pattern 150 is formed of a metal layer (not shown) made of any one of Cr, Ti, Ni, and Pt so as to be easily formed on the p-type semiconductor layer 140, and through the metal layer, the p It may be adhered to the type semiconductor layer 140.

The p-type electrode 160 is formed on one side of the p-type semiconductor layer 140, and the n-type electrode 170 is formed on the n-type semiconductor layer 120 mesa-etched. Here, as illustrated in FIG. 2, the p-type electrode 160 is formed with the c-shaped electrode extension part 162 so as to reduce a bias of current flow occurring at its lower surface. . In the present exemplary embodiment, the electrode extension part 162 is described as having a C shape, but is not limited thereto. The electrode extension part 162 may be formed in various forms to reduce the current bias of the lower surface of the p-type electrode 160.

By such a configuration, the high-efficiency light emitting diode 10 may improve the light extraction efficiency while replacing it without using a transparent electrode such as ITO.

4 is a cross-sectional view of the high efficiency light emitting diode according to the second embodiment of the present invention, and FIG. 5 is a plan view of the high efficiency light emitting diode of FIG.

The high-efficiency light emitting diode 40 is a horizontal light emitting diode, and the configuration except for the transparent electrode 480 formed on the p-type semiconductor layer 140 is the same as that of the first embodiment, and thus a detailed description thereof will be omitted.

The high efficiency light emitting diode 40 includes a transparent electrode 480 formed on the p-type semiconductor layer 140 and having a nano metal pattern 150 formed of a repetitive strip pattern on the top surface thereof.

Since the transparent electrode 480 has a function of emitting light generated from the active layer 130 to the outside, excellent electrical properties and characteristics that do not inhibit light emission are required, and may be made of ITO or ZnO. The p-type electrode 160, the electrode extension 162, and the nano metal pattern 150 are formed on the transparent electrode 480, as shown in FIG. 5A, on the transparent electrode 480. The p-type electrode 160 is formed at one side, and the electrode extension part 162 having a U-shape is formed by extending from the p-type electrode 160. For example, a strip pattern may be formed between the p-type electrode 160 and the electrode extension part 162 in one horizontal direction. In addition, as shown in FIG. 5B, a direction between the p-type electrode 160 and the electrode extension 162 in one direction and a direction perpendicular thereto, for example, a horizontal direction and a vertical direction, on the transparent electrode 480. The nano metal pattern 150 may be formed in a strip pattern having a matrix shape.

By such a configuration, the high-efficiency light emitting diode 40 can improve current spreading and light extraction efficiency without additional processing such as roughness formation on the transparent electrode.

6 is a cross-sectional view of a high efficiency light emitting diode according to a third embodiment of the present invention, and FIG. 7 is a plan view of the high efficiency light emitting diode of FIG.

The high efficiency light emitting diode 60 is a vertical light emitting diode and includes a metal support layer 610, a reflective electrode layer 620 formed on the metal support layer 610, and a p-type semiconductor layer 630 sequentially stacked on the reflective electrode layer 620. ), The active layer 640, the n-type semiconductor layer 650, and the nano-metal pattern 660 formed in a repetitive strip pattern on the n-type semiconductor layer 650, and are formed on one side of the n-type semiconductor layer 650. an n-type electrode 670.

The metal support layer 610 is formed of a metal on a semiconductor substrate. The semiconductor substrate may be a conductive ceramic substrate such as SrTiO 3 doped with Nb, ZnO doped with Al, ITO, or indium zinc oxide (IZO) or doped with B. Impurity doped semiconductor substrates such as Si, As doped Si, impurity doped diamond, and the metal is at least one of Au, Ni, W, Mo, Cu, Al, Ta, Ag, Pt, Cr, and alloys thereof Either one is preferably Cu / W or Cu / Mo.

The reflective film electrode layer 620 is a layer requiring excellent reflection characteristics so that the generated light is not transmitted to the metal support layer 610. For example, Ni, Al, Pt, Ru, Ir, Rh, Ta, Mo, Ti, Ag, W, Cu, Cr, Pd, V, Co, Nb, Zr and at least one of these alloys, preferably Ni / Ag, Pt / Ag. It consists of Ru / Ag and Ir / Ag.

The p-type semiconductor layer 630 is formed of a nitride semiconductor material doped with a p-type dopant, and is formed of p-type Al x In y Ga 1-xy N (0 ≦ x, y, x + y ≦ 1). For example, nitride semiconductor materials include GaN, AlGaN, InGaN, and dopants used for doping include Mg, Zn, or Be, and preferably Mg.

The active layer 640 is a region in which electrons and holes are recombined to emit light, and may have a multi-quantum well (MQW) structure in which two or more quantum wells and a quantum barrier are stacked, or have a single quantum well structure. The well layer may be binary to quadruple compound semiconductor layers represented by general formula Al x In y Ga 1-xy N (0 ≦ x, y, x + y ≦ 1). For example, an InGaN layer is used as a well layer, and a GaN layer is grown as a barrier layer to form a multi-quantum well structure (MQW). In particular, the blue light emitting device may have a multi quantum well structure such as InGaN / GaN, and the ultraviolet light emitting device may have a multi quantum well structure such as GaN / AlGaN, InAlGaN / InAlGaN, and InGaN / AlGaN.

The n-type semiconductor layer 650 is formed of a nitride semiconductor doped with an n-type dopant, and formed of n-type Al x In y Ga 1-xy N (0 ≦ x, y, x + y ≦ 1). For example, nitride semiconductors include GaN, AlGaN, InGaN, and dopants used for doping include Si, Ge, Se, Te, or C, and preferably Si.

The nano metal pattern 660 is a strip pattern in nano units, and is formed in a repetitive strip pattern on one side of the n-type electrode 670 on the n-type semiconductor layer 650.

As shown in FIG. 7A, the nano metal pattern 660 may have a strip pattern formed between the n-type electrode 670 and the electrode extension 672, for example, in one horizontal direction. . In addition, as shown in FIG. 7B, the nano metal pattern 660 is in a direction perpendicular to the n-type electrode 670 and the electrode extension 672, for example, a horizontal direction and a vertical direction. A strip pattern in the form of a matrix may be formed.

The nano metal pattern 660 is formed with a constant width (W), thickness (T) and lattice constant (γ), for example, the width (W) is formed of 1 ~ 100nm, the thickness (T) Is formed to 1 to 100 nm, and the lattice constant (γ) is preferably formed to be 2 to 100 nm.

In addition, the nano metal pattern 660 is a material capable of exciting the surface plasmon or the local surface plasmon, for example, Au, Ag, Cu Al, Pt, Pd, Ni, Co, Fe, Mn, Cr, Mo, It is made of a metal selected from W, V, Ta, Nb, Hf, Zr, Ti, Zn, In, Sn, Pb, Sb, Bi, and alloys thereof, and preferably at least one of Au, Ag, and Cu. . In addition, the nano metal pattern 150 may be formed of a composite layer of any one of Ni / Au, Pt / Au, Cr / Au, and Pd / Au, and a metal layer made of any one of Cr, Ti, Ni, and Pt. It may be adhered to the n-type semiconductor layer 650 through (not shown).

The n-type electrode 670 is made of any one of Ti / Al, Cr / Au, Cr / Au and Ni / Au, as shown in Figure 7, the c-shaped electrode extension 672 is formed .

By such a configuration, the high-efficiency light emitting diode 60 can improve the light extraction efficiency while replacing it without using an anti-reflection film such as ITO.

8 is a cross-sectional view of a high efficiency light emitting diode according to a fourth embodiment of the present invention, and FIG. 9 is a plan view of the high efficiency light emitting diode of FIG. 8.

The high-efficiency light emitting diode 80 is a vertical light emitting diode, and the configuration except for the anti-reflection film electrode layer 880 formed on the n-type semiconductor layer 650 is the same as in the third embodiment, and thus a detailed description thereof will be omitted.

The high-efficiency light emitting diode 80 includes an anti-reflection film electrode layer 860 formed on the n-type semiconductor layer 650 and having a nano metal pattern 660 formed of a repetitive strip pattern formed on the n-type semiconductor layer 650.

Since the anti-reflection film electrode layer 860 has a function of emitting light generated from the active layer 150 to the outside and an electrode function for applying a current, any one of ITO, ZnO, and IZO having excellent electrical characteristics and light transmittance is excellent. Done in one.

The n-type electrode 670, the electrode extension 672, and the nano metal pattern 660 are formed on the anti-reflection film electrode layer 860. As illustrated in FIG. 9A, the anti-reflection film electrode layer 860 is formed. The n-type electrode 670 is formed on one side of the c), and is extended from the n-type electrode 670 to form the c-shaped electrode extension 672. For example, a strip pattern may be formed between the n-type electrode 670 and the electrode extension 672 in one horizontal direction. In addition, as shown in FIG. 9B, one direction between the n-type electrode 670 and the electrode extension 672 on the anti-reflection film electrode layer 860 and a direction perpendicular thereto, for example, a horizontal direction and a vertical direction. The nano metal pattern 660 may be formed as a strip pattern having a matrix shape.

By such a configuration, the high-efficiency light emitting diode 80 can improve current spreading and light extraction efficiency without additional processing such as roughness formation on the anti-reflection film.

Although the preferred embodiments of the present invention have been described above, the present invention is not limited thereto, and various modifications can be made within the scope of the technical idea of the present invention, and it is obvious that the present invention belongs to the appended claims. Do.

10: high efficiency light emitting diode 110: substrate
120, 650: n-type semiconductor layer 130, 640: active layer
140, 630: p-type semiconductor layer 150: nano metal pattern
160: p-type electrode 170: n-type electrode
480: transparent electrode 610: metal support layer
620: reflective film electrode layer 860: antireflection film electrode layer

Claims (12)

Board;
A semiconductor layer in which an n-type semiconductor layer, an active layer, and a p-type semiconductor layer are sequentially stacked on the substrate; And
And a nano metal pattern formed in a repetitive strip pattern on the p-type semiconductor layer. Board;
A semiconductor layer in which an n-type semiconductor layer, an active layer, and a p-type semiconductor layer are sequentially stacked on the substrate;
A transparent electrode formed on the p-type semiconductor layer; And
And a nano-metal pattern formed in a repetitive strip pattern on the transparent electrode. Metal support layers;
A reflective electrode layer formed on the metal support layer;
A semiconductor layer in which a p-type semiconductor layer, an active layer, and an n-type semiconductor layer are sequentially stacked on the reflective film electrode layer; And
And a nano metal pattern formed in a repetitive strip pattern on the n-type semiconductor layer. Metal support layers;
A reflective electrode layer formed on the metal support layer;
A semiconductor layer in which a p-type semiconductor layer, an active layer, and an n-type semiconductor layer are sequentially stacked on the reflective film electrode layer;
An anti-reflection film electrode layer formed on the n-type semiconductor layer;
And a nano metal pattern formed in a repetitive strip pattern on the anti-reflection film electrode layer. The method according to any one of claims 1 to 4,
The nano-metal pattern is a high efficiency light emitting diode, characterized in that made of at least one of Au, Ag and Cu. The method of claim 5, wherein
The nano metal pattern is a high efficiency light emitting diode, characterized in that formed of a composite layer of any one of Ni / Au, Pt / Au, Cr / Au, and Pd / Au. The method of claim 5, wherein
The nano metal pattern is formed on the p-type semiconductor layer through a metal layer made of any one of Cr, Ti, Ni, and Pt. The method of claim 5, wherein
The nano metal pattern is a high efficiency light emitting diode, characterized in that formed in a width of 1 ~ 100nm. The method of claim 5, wherein
The nano-metal pattern is a high efficiency light emitting diode, characterized in that formed in a thickness of 1 ~ 100nm. The method of claim 5, wherein
The nano metal pattern is a high efficiency light emitting diode, characterized in that formed by a lattice constant of 2 ~ 100nm. The method of claim 5, wherein
The strip pattern is a high efficiency light emitting diode, characterized in that formed in one direction. The method of claim 11,
The strip pattern is a high efficiency light emitting diode, characterized in that further formed in a direction perpendicular to the one direction.
KR1020110002446A 2011-01-10 2011-01-10 Light emitting diode with high efficiency KR20120080957A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020110002446A KR20120080957A (en) 2011-01-10 2011-01-10 Light emitting diode with high efficiency

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020110002446A KR20120080957A (en) 2011-01-10 2011-01-10 Light emitting diode with high efficiency

Publications (1)

Publication Number Publication Date
KR20120080957A true KR20120080957A (en) 2012-07-18

Family

ID=46713359

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110002446A KR20120080957A (en) 2011-01-10 2011-01-10 Light emitting diode with high efficiency

Country Status (1)

Country Link
KR (1) KR20120080957A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160047602A (en) 2014-10-22 2016-05-03 한양대학교 산학협력단 Light emitting device and method of fabricating the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160047602A (en) 2014-10-22 2016-05-03 한양대학교 산학협력단 Light emitting device and method of fabricating the same

Similar Documents

Publication Publication Date Title
US10700237B2 (en) Ultraviolet light-emitting devices incorporating graded layers and compositional offsets
JP5214861B2 (en) Nitride-based white light emitting device and method for manufacturing the same
TWI466323B (en) Light emitting diode
KR101127314B1 (en) Semiconductor device
KR101342664B1 (en) Light emitting diode for emitting ultraviolet
JP5237274B2 (en) LIGHT EMITTING ELEMENT AND LIGHTING DEVICE
KR100703091B1 (en) Nitride semiconductor light emitting device and method for manufacturing the same
KR100862516B1 (en) Light emitting diode
JP2011187658A (en) Semiconductor light-emitting element
KR101011108B1 (en) Nitrides light emitting device selectively using the coupling effect between surface plasmons and active layer and method for manufacturing it
Hong et al. Impact of grain growth of silver reflective electrode by electron bombardment on external quantum efficiency of III-nitride micro-light-emitting diode arrays
KR20100085329A (en) Semiconductor light emitting device
Oh et al. Fabrication of HfO2/TiO2–based conductive distributed Bragg reflectors: Its application to GaN-based near-ultraviolet micro-light-emitting diodes
KR20070028095A (en) Light emitting diode having low resistance
KR101317632B1 (en) Nitride light emitting device and method of making the same
Park et al. Sputter deposition of Sn-doped ZnO/Ag/Sn-doped ZnO transparent contact layer for GaN LED applications
Chow et al. Reduction of efficiency droop in c-plane InGaN/GaN light-emitting diodes using a thick single quantum well with doped barriers
CN108565319B (en) Nitride semiconductor structure and semiconductor light emitting element
KR101158126B1 (en) Galium-Nitride Light Emitting Diode
KR20120080957A (en) Light emitting diode with high efficiency
KR101600783B1 (en) Method of fabricating light emitting diode with high efficiency
KR20120046632A (en) Light emitting device inculding graphene layer and nanocrystal layer
KR100691123B1 (en) Method for fabricating light emitting diode of vertical electrode type
JP2011082248A (en) Semiconductor light emitting element and method of manufacturing the same, and lamp
TWI446575B (en) Optoelectronic semiconductor chip and method for its manufacture

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination