KR20120077317A - Electronic component module and manufacturing method of the same - Google Patents

Electronic component module and manufacturing method of the same Download PDF

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Publication number
KR20120077317A
KR20120077317A KR1020100139234A KR20100139234A KR20120077317A KR 20120077317 A KR20120077317 A KR 20120077317A KR 1020100139234 A KR1020100139234 A KR 1020100139234A KR 20100139234 A KR20100139234 A KR 20100139234A KR 20120077317 A KR20120077317 A KR 20120077317A
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KR
South Korea
Prior art keywords
electronic component
metal case
conductive resin
resin layer
substrate
Prior art date
Application number
KR1020100139234A
Other languages
Korean (ko)
Inventor
정철환
Original Assignee
삼성전기주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전기주식회사 filed Critical 삼성전기주식회사
Priority to KR1020100139234A priority Critical patent/KR20120077317A/en
Publication of KR20120077317A publication Critical patent/KR20120077317A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3672—Foil-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3737—Organic materials with or without a thermoconductive filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15151—Shape the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16151—Cap comprising an aperture, e.g. for pressure control, encapsulation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

The present invention relates to a method for manufacturing an electronic component module having excellent heat dissipation characteristics and an electronic component module manufactured thereby. Forming a solder on the substrate of the present invention; Placing and reflowing the electronic component on the substrate; Forming a metal case on the substrate; And forming a conductive resin layer on the upper surface of the electronic component so as to contact the metal case. The electronic component module manufactured by the electronic component module manufacturing method includes excellent heat dissipation characteristics.

Description

Electronic component module and manufacturing method of the same

The present invention relates to an electronic component module and a method of manufacturing the same. More specifically, it relates to an electronic component module having excellent heat dissipation characteristics and a method of manufacturing the same.

Minimizes performance degradation of the power amplifier integrated circuit chip by dissipating heat generated when the power amplifier module (PAM) or the front end module (FEM) operates to the outside of the module or into the air.

In addition, the module size will be reduced by changing from a conventional wire bonding type to a chip scale package (CSP) type package.

In the existing power amplifier module or front-end module, the power amplifier (PA) is wire-bonded and connected to the board, and the assembly is protected by epoxy molding compound (EMC) molding. At this time, in order to fix the power amplifier to the substrate it is bonded using a conductive epoxy.

Since the power amplifier generates heat with high heat loss when operating, it is a factor that degrades the linear characteristics of the power amplifier. Therefore, it is necessary to release the generated heat to the outside of the module to suppress the increase in temperature in the module.

Therefore, it is important to design a heat sink to dissipate the generated heat to the outside. A heat sink via is formed to transfer heat out of the module to the ground of the power amplifier.

The application of wire-bonded power amplifiers requires additional equipment for wirebonding and EMS molding, incurring additional costs for the package and requiring line setup investment.

In addition, since the module design for the wire bonding process has to be made, additional space is required.

An object of the present invention is to provide an electronic component module having excellent heat dissipation characteristics and a method of manufacturing the same.

In one embodiment of the present invention; An electronic component chip mounted on the substrate; A metal case mounted on an upper surface of the substrate, spaced apart from the electronic component chip, and surrounding the electronic component chip; And a conductive resin layer formed on an upper surface of the electronic component chip and in contact with a portion of the electronic component chip and the metal case.

In addition, the substrate provides an electronic component module having through vias formed therein.

The electronic component chip also provides an electronic component module mounted in a chip scale package type.

In addition, the electronic component chip provides an electronic component module in which an underfill is formed.

In addition, a portion of the metal case contacting the conductive resin layer provides an electronic component module that is bent toward the conductive resin layer.

The present invention also provides an electronic component module having a perforated portion of the metal case in contact with the conductive resin layer.

In addition, the conductive resin layer provides an electronic component module which is an epoxy layer.

In another embodiment of the present invention, forming a solder on a substrate; Placing and reflowing the electronic component chip on the solder; Surrounding the electronic component chip, spaced apart from the electronic component chip, and mounting a metal case on an upper surface of the substrate; And forming a conductive resin layer in contact with the upper surface of the electronic component chip and the metal case.

In addition, the reflow provides a method of manufacturing an electronic component module that is performed only once.

Further, after the reflowing step, an electronic component module manufacturing method comprising an underfill step of filling a space formed between the lower surface of the electronic component chip and the substrate using an insulating resin.

In addition, a portion of the metal case contacting the conductive resin layer provides an electronic component module that is bent toward the conductive resin layer.

The present invention also provides an electronic component module having a perforated portion of the metal case in contact with the conductive resin layer.

In addition, the conductive resin layer provides an electronic component module which is an epoxy layer.

According to the present invention, an electronic component module having excellent heat dissipation characteristics and a method of manufacturing the same can be obtained.

1 is a schematic diagram showing a structure of an electronic component module according to another embodiment of the present invention.
2 is a schematic diagram illustrating a manufacturing process of an electronic component module according to an embodiment of the present invention.
3 is a schematic diagram illustrating a manufacturing process of an electronic component module according to another embodiment of the present invention.

DESCRIPTION OF EMBODIMENTS Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. However, embodiments of the present invention may be modified in various other forms, and the scope of the present invention is not limited to the embodiments described below. Furthermore, embodiments of the present invention are provided to more fully explain the present invention to those skilled in the art.

An electronic component module according to one embodiment of the present invention includes a substrate; An electronic component chip mounted on the substrate; A metal case mounted on an upper surface of the substrate, spaced apart from the electronic component chip, and surrounding the electronic component chip; And a conductive resin layer formed on an upper surface of the electronic component chip and in contact with a portion of the electronic component chip and the metal case.

The electronic component module according to the present embodiment may be a power amplifier module (PAM) or a front end module (FEM).

This embodiment will be described taking a power amplifier module (PAM) as an example.

1 is a schematic diagram showing the structure of a power amplifier module according to an embodiment.

Referring to FIG. 1, a power amplifier integrated circuit chip 30, a metal case 20, and other surface mount type electronic components 70 may be mounted on a substrate 10.

The substrate 10 may be, but is not limited to, a PCB (Printed Circuit Board) substrate.

A heat sink through via 60 may be formed in the substrate 10.

The through via 60 is preferably formed at a portion where the power amplifier integrated circuit chip 30 is adhered to the substrate 10.

The heat generated from the power amplifier integrated circuit chip 30 is to be discharged to the outside through the through via (60).

The electronic component chip 30 may be mounted in a chip scale package type.

Chip Scale Package (CSP) refers to a package that is equal to or slightly larger than the chip size. It is a chip-sized package technology that emerged as the need for smaller, lighter and thinner packages. Also called a Chip Size Package.

The power amplifier integrated circuit chip 30 or other surface mount electronic components may be mounted on a substrate through the solder 51 or the solder ball 50, and the substrate 10 on which the power amplifier integrated circuit chip 30 is mounted. Increase the temperature of) and reflow. The reflow may be performed only once.

The substrate 10 and the electronic components 30 and 70 may be bonded through reflow. The process can be reduced by performing only one reflow.

The power amplifier integrated circuit chip 30 may be underfilled.

Underfill (90) means to completely fill the lower space of the package such as ball grid array (BGA), chip scale package (CSP), flip chip (Flip Chip) using an insulating resin.

The underfill 90 is performed to maintain the life of an electronic component module for a long time, and is used in a portable device that is subject to a lot of physical shock and a high speed communication device that is subject to a lot of thermal shock.

The metal case 20 is mounted on an upper surface of the substrate 10, spaced apart from the power amplifier integrated circuit chip 30, and surrounds the power amplifier integrated circuit chip 30.

The metal case 20 functions to protect the power amplifier integrated circuit chip 30 mounted on the substrate. In addition, as will be described later, in the present embodiment, it serves as a passage for dissipating heat generated in the power amplifier integrated circuit chip 30 into the air.

The metal case 20 may be connected to the ground (not shown) through the side surface of the substrate 10. As the metal case 20 is connected to the ground (not shown), heat transmitted to the metal case 20 may be released into the air as well as heat may be released to the ground. The heat dissipation effect can be increased.

The metal case 20 may be mounted on the upper surface of the substrate 10 to surround the power amplifier integrated circuit chip 30. However, it does not directly contact the power amplifier integrated circuit chip 30.

A portion of the metal case contacting the conductive resin layer may be bent toward the conductive resin layer.

The metal case should be enough to cover and protect all the electronic components mounted on the upper surface of the substrate. In this case, the space between the power amplifier and the integrated circuit chip 30 may be too large.

As a result, it may be difficult to form a conductive resin layer on the upper surface of the power amplifier integrated circuit chip 30 to be in contact with the metal case.

Therefore, a portion of the metal case 20 to be in contact with the conductive resin layer 40 may be formed to be bent so as to dent toward the conductive resin layer 40.

A portion of the metal case 20 may be perforated, and the perforated portion may be a portion where the metal case 20 contacts the conductive resin layer 40.

This is because the conductive resin layer 40 must be formed on the upper surface of the power amplifier integrated circuit chip 30 by drilling a portion of the metal case 20 and injecting the conductive resin through the drilling hole 21.

The conductive resin layer 40 may be formed on the power amplifier integrated circuit chip 30.

The conductive resin 40 is coated on the upper surface of the power amplifier integrated circuit chip 30 using the dotting equipment 80. In this case, the conductive resin layer 40 is in contact with the metal case 20.

The conductive resin layer 40 is formed on the upper surface of the power amplifier integrated circuit chip 30 to allow the power amplifier integrated circuit chip 30 and the metal case 20 to contact each other via the conductive resin layer 40. will be.

The conductive resin layer 40 is cured.

A curing agent is included in the conductive resin layer 40, and the curing agent may initiate a reaction by light, heat, or the like. In general, a method of initiating a curing reaction by applying heat is easier.

Since the conductive resin layer 40 is cured, the power amplifier integrated circuit chip 30 is firmly attached to the metal case 20.

As a result, the power amplifier integrated circuit chip 30 is thermally connected to the metal case 20, and heat generated from the power amplifier integrated circuit chip 30 is transferred to the metal case 20 through the conductive resin layer 40. The heat transferred to the metal case 20 is released into the air.

The conductive resin layer may be an epoxy layer.

When the epoxy resin is cured, the mechanical properties such as tensile strength are very excellent, and thus the epoxy resin has excellent ability to withstand even when an external impact is applied, thus improving reliability.

The epoxy layer 40 should be excellent in thermal conductivity.

The heat generated by the power amplifier integrated circuit chip 30 is to dissipate heat through the conductive epoxy layer.

When the filler with high thermal conductivity is added to an epoxy resin, the thermal conductivity of the epoxy layer 40 can be improved.

According to one or more exemplary embodiments, a method of manufacturing an electronic component module includes forming solder on a substrate; Placing and reflowing the electronic component chip on the solder; Surrounding the electronic component chip, spaced apart from the electronic component chip, and mounting a metal case on an upper surface of the substrate; And forming a conductive resin layer to contact the upper surface of the electronic component chip and the metal case.

2 schematically shows a method of manufacturing a power amplifier module according to the present embodiment.

Referring to FIG. 2A, the solder 51 is formed on the substrate 10 by a screen printing method. The heat sink through via 60 may be formed in the substrate 10.

Referring to FIG. 2B, next, the power amplifier integrated circuit chip 30 and other electronic components 70 are mounted on the solder 51, and the electronic components 40 and 70 mounted on the substrate 10. In order to protect the metal case 20 is mounted.

The metal case 20 may be installed spaced apart from the power amplifier integrated circuit chip 30 at a predetermined interval.

A portion of the metal case 20 is perforated, and the perforation hole 21 may exist at a position corresponding to the power amplifier integrated circuit chip 30.

The metal case 20 may be connected to the ground (not shown) via the side surface of the substrate 10.

As the metal case 20 is in contact with the ground, the heat transferred to the metal case 20 may be released into the air as well as released through the ground terminal. Therefore, the heat dissipation effect can be increased.

Referring to Figure 2 (c), using a dotting (dotting) device to inject a conductive resin through the through hole 21 of the metal case 20 and then cured. In this way, the metal case 20 and the power amplifier integrated circuit chip 30 are mechanically and thermally connected through the conductive resin layer 40.

In this embodiment, the matters regarding the board | substrate 10, the power amplifier integrated circuit chip 30, the metal case 20, the conductive resin layer 40, etc. are the same as that of the above-mentioned.

3 shows another embodiment of the present invention.

The present embodiment may include an underfill 90 step of filling a space formed between the bottom surface of the power amplifier integrated circuit chip 30 and the substrate 10 by using an insulating resin after the reflowing step. Can be.

(A), (b) and (c) of FIG. 3 correspond to (a), (b) and (c) of FIG. 2, respectively. However, the difference is that the underfill 90 is additionally formed.

The underfill 90 makes the mechanical coupling between the power amplifier integrated circuit chip 30 and the substrate 10 more robust and increases resistance to external shocks. This can improve the reliability of the product.

In this embodiment, the matters regarding the board | substrate 10, the metal case 20, the conductive resin layer 40, etc. are the same as that of what was demonstrated previously.

The present invention is not limited by the above-described embodiments and the accompanying drawings, but is intended to be limited only by the appended claims. It will be apparent to those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. something to do.

10: substrate 20: metal case
21: punched hole 30: power amplifier integrated circuit chip
40: conductive epoxy layer 50: solder ball
51: solder 60: through via
70: other surface mount electronic components

Claims (14)

A substrate on which solder is formed;
An electronic component chip mounted on the substrate through the solder;
A metal case mounted on an upper surface of the substrate, spaced apart from the electronic component chip, and surrounding the electronic component chip; And
A conductive resin layer formed on an upper surface of the electronic component chip and in contact with a portion of the electronic component chip and the metal case;
Electronic component module comprising a.
The method of claim 1,
An electronic component module having through vias formed in the substrate.
The method of claim 1,
The electronic component chip is an electronic component module mounted in a chip scale package type.
The method of claim 1,
The electronic component chip is an electronic component module is formed underfill (underfill).
The method of claim 1,
The electronic component module of the metal case is bent toward the conductive resin layer in contact with the conductive resin layer.
The method of claim 1,
An electronic component module of the metal case is a portion that is in contact with the conductive resin layer is a perforated portion.
The method of claim 1,
The metal case is an electronic component module connected to the ground terminal.
The method of claim 1,
The conductive resin layer is an electronic component module is an epoxy layer.
Forming a solder on the substrate;
Placing and reflowing the electronic component chip on the solder;
Mounting a metal case on an upper surface of the substrate to be spaced apart from the electronic component chip and to surround the electronic component chip; And
Forming a conductive resin layer to contact the upper surface of the electronic component chip and the metal case;
Method of manufacturing an electronic component module comprising a.
10. The method of claim 9,
The reflow is a manufacturing method of the electronic component module is performed only once.
10. The method of claim 9,
After the reflow step,
And an underfill step of filling the space formed between the lower surface of the electronic component chip and the substrate by using an insulating resin.
10. The method of claim 9,
A portion of the metal case in contact with the conductive resin layer is a manufacturing method of the electronic component module bent toward the conductive resin layer.
10. The method of claim 9,
A method of manufacturing an electronic component module in which a portion of the metal case in contact with the conductive resin layer is perforated.
10. The method of claim 9,
The conductive resin layer is an epoxy layer manufacturing method of an electronic component module.
KR1020100139234A 2010-12-30 2010-12-30 Electronic component module and manufacturing method of the same KR20120077317A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020100139234A KR20120077317A (en) 2010-12-30 2010-12-30 Electronic component module and manufacturing method of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020100139234A KR20120077317A (en) 2010-12-30 2010-12-30 Electronic component module and manufacturing method of the same

Publications (1)

Publication Number Publication Date
KR20120077317A true KR20120077317A (en) 2012-07-10

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KR1020100139234A KR20120077317A (en) 2010-12-30 2010-12-30 Electronic component module and manufacturing method of the same

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112382618A (en) * 2020-11-09 2021-02-19 成都海光集成电路设计有限公司 Packaging structure and packaging method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112382618A (en) * 2020-11-09 2021-02-19 成都海光集成电路设计有限公司 Packaging structure and packaging method
CN112382618B (en) * 2020-11-09 2023-10-27 成都海光集成电路设计有限公司 Packaging structure and packaging method

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