KR20120075209A - Method for manufacturing lcd, lcd module including led - Google Patents

Abstract

PURPOSE: A method for manufacturing an LED device and a liquid crystal display device module including the LED device are provided to improve luminous efficiency, optical property, and crystalline of the LED device by uniformly forming an energy band of the edge circumference of a quantum-well layer. CONSTITUTION: A substrate is heat-treated(S300). A buffer layer is formed on the substrate(S310). An n-GaN layer is formed on the buffer layer(S320). A multiple quantum well layer is formed on the n-GaN layer(S330). A p-GaN layer is formed on the multiple quantum well layer(S340). A first electrode pad connected with the p-GaN layer and a second electrode pad connected with the n-GaN layer are formed(S350).

Description

Method for manufacturing LED device, liquid crystal display module including LED device {METHOD FOR MANUFACTURING LCD, LCD MODULE INCLUDING LED}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting diode device (LED), and more particularly, to a method of manufacturing an LED device having improved luminous efficiency and optical characteristics of a semiconductor LED device using a group III nitride compound, and a liquid crystal display device module including the LED device. will be.

A light emitting diode (LED), which is a semiconductor light emitting device, is a device that emits light energy of various wavelengths by applying an electrical signal using characteristics of a compound semiconductor. Currently commercially available LED devices employ a compound semiconductor process by bonding p-type semiconductors (Group III) having many holes and n-type semiconductors (Group V) having many carriers.

Particularly, in the case of the group III element including nitride, it has excellent thermal stability and has a direct transition type energy band structure, which has advantages of miniaturization, thinning, and light weight as a high efficiency low power device. In addition, the LED element has a long life, no preheating time, and has a very fast turn on / off speed. Therefore, it is used as a backlight module of a large area liquid crystal display (LCD) by replacing lighting devices such as incandescent lamps and fluorescent lamps. It is getting more attention.

1 is a view showing the structure of a conventional group III nitride based light emitting diode device.

As shown in the drawing, a conventional group III nitride-based light emitting diode device forms a buffer layer 15 for buffering on a substrate 10, and is formed of an n-type nitride-based semiconductor on the buffer layer 15. The lower layer 20 is formed. Further, the active layer 30 made of a nitride semiconductor and the upper layer 40 made of a p-type nitride semiconductor are sequentially grown on the lower layer 20. Subsequently, after forming the transparent electrode layer 42 in ohmic contact with the upper layer 40, an etching process for exposing the lower layer 20 is performed and electrode pads 24 and 44 for electrical connection to the outside are formed. It is manufactured to have the structure shown. According to this structure, the LED chip emits light according to the combination of electrons and holes in the active layer 30 by the voltage applied to the electrode pads 24 and 44.

According to this structure, the light efficiency of the LED device is determined by the nature of the active layer 30, and mainly to improve the structure of the active layer 30 itself or to improve the effective amount of the carrier to improve the probability of recombination of electrons and holes Research continues in the direction of increasing mass.

The active layer described above includes a single quantum well (SQW) structure having one quantum well structure and a multi quantum well (MQW) structure having a plurality of quantum well layers. Among them, in particular, the active layer of the multi-quantum well structure has the advantage of excellent light efficiency and high luminous output compared to the single quantum well structure. However, a plurality of quantum well layers of the active layer has a disadvantage in that it is not easy to uniformly adjust the indium (In) composition in the layer, and the inhomogeneous composition of the indium (In) is crystallinity, luminous efficiency and optical properties of the LED device This causes a decrease.

FIG. 2 is a diagram illustrating an energy band of a conventional LED device. As illustrated, the multi-quantum well layer 30 positioned between the n-GaN layer 20 and the p-GaN layer 40 is shown in FIG. The energy band gap of the quantum barrier layer 31 is larger than that of the quantum well layer 32 due to the fact that the indium (In) content of the quantum well layer 320 is larger than that of the quantum barrier layer 31. In particular, as shown in the secondary ion mass spectrometry (SIMS) analysis, the concentration of indium (In) is not uniform due to diffusion near the edge of the quantum well layer 32, so that the edge region of the quantum well layer 32 33) the energy band is changed to cause an unbalance with the central region 34, which is not flat and can be distorted.

This is a major cause of the decrease in crystallinity and luminous efficiency of the LED device.

The present invention has been made to solve the above-described problem, in the LED device having a multi-quantum well structure doped indium (In) doped in the quantum well layer in the active layer to the quantum barrier layer to improve the crystallinity and luminous efficiency of the device The purpose is to solve the phenomenon of deterioration.

In order to achieve the above object, a method of manufacturing an LED device according to a preferred embodiment of the present invention, forming a buffer layer on a substrate; Sequentially forming an un-GaN layer and an n-GaN layer on the buffer layer; On the n-GaN layer, a plurality of Al _X In _Y Ga _{1 -X - Y} N (x + y ≦ 1,0 ≦ x ≦ 1,0 ≦ _y ≦ 1) quantum barrier layers and Al _Z In _W Ga _{1 − A} quantum well layer having _{Z− W} N (z + w ≦ 1, 0 ≦ z ≦ 1,0 ≦ w ≦ 1) is alternately formed, and the indium (In) content of the edge region of the quantum well layer is Forming to have the same composition ratio; Forming a p-GaN layer on the multi-quantum well layer; And forming first and second electrode pads on top of the p-GaN layer and on one region of the n-GaN layer, respectively.

Forming the indium (In) content of the edge region of the quantum well layer to have the same composition ratio as the center region, the content of the indium (In) from the edge region to the center region of the quantum well layer is a linear, logarithmic It is characterized in that the control by reducing to one of the form, or exponential form.

Forming the indium (In) content of the edge region of the quantum well layer to have the same composition ratio as the central region, the indium (In) of the first flow (flow) from the edge region to one region of the quantum well layer Shedding step; And flowing indium (In) of a second flow smaller than the first flow from the one region to the central region.

Before the step of forming a buffer layer on the substrate, further comprising the step of heat-treating the substrate.

Forming the un-GaN layer and the n-GaN layer sequentially on the buffer layer, forming the un-GaN layer to a thickness of 0.5um ~ 5.0um; And forming an n-GaN layer having a thickness of 3.0 μm or less on top of the un-GaN layer.

The liquid crystal display module using the LED package mounted with the LED device manufactured by the manufacturing method according to an embodiment of the present invention as a light source, the liquid crystal panel; A support main on which the liquid crystal panel is seated; A top case positioned above the liquid crystal panel to surround the liquid crystal panel and to be coupled to the support main; A backlight unit positioned below the liquid crystal panel and including the LED package and the optical member to provide light to the liquid crystal panel; And a cover bottom on which the liquid crystal panel and the backlight unit are seated and disposed on a rear surface of the backlight unit to be coupled to the top case.

According to a preferred embodiment of the present invention, the indium (In) flow is variably applied to the plurality of quantum well layers forming the active layer of the multi-quantum well structure of the group III nitride-based LED device, so that the edge of the quantum well layer is near. Forming the energy band of the uniform to improve the crystallinity, luminous efficiency and optical characteristics of the LED device and the manufacturing method of the LED device, there is an effect that can provide a liquid crystal display device module including the LED device.

1 is a view showing the structure of a conventional group III nitride based light emitting diode device.
2 is a diagram illustrating an energy band of a conventional LED device in a diagram.
3 is a view showing the structure of an LED device according to an embodiment of the present invention.
4 is a diagram schematically showing an energy band of an LED device according to an embodiment of the present invention.
5A to 5D are schematic views illustrating a flow rate of indium (In) that is varied during growth of a multi-quantum well layer of an LED device according to an exemplary embodiment of the present invention.
6 is a flowchart illustrating a method of manufacturing an LED according to an embodiment of the present invention.
7 is an exploded perspective view illustrating an example of a structure of a liquid crystal display device module including an LED package according to an embodiment of the present invention.

Hereinafter, a method of manufacturing an LED device and a liquid crystal display module including the LED device will be described with reference to the accompanying drawings.

In the following description, the drawings referred to for the embodiments herein are not intended to limit the shapes and positions of the components to the forms shown, and in particular the drawings are intended to provide an understanding of the structures and shapes that are technical features of the invention. To help, some components have been exaggerated or scaled down.

Substrate and each layer growth method of the LED device described below, as well as the conventional Metal Organic Chemical Vapor Deposition (MOCVD) method, MBE (Molecular Beam Epitaxy), PECVD (Plasma Enhanced Chemical Vapor Deposion), VPE It can be implemented through a method such as (Vapor Phase Epitaxy).

3 is a view showing the structure of an LED device manufactured according to an embodiment of the present invention.

As shown, the LED device of the present invention is a substrate 100, buffer layer 115, n-GaN layer 120, the first electrode pad 124, multi-quantum well layer (MQW) 130, p- The GaN layer 140, the transparent electrode layer 142, and the second electrode pad 144 are included.

More specifically, the substrate 100 is to grow a gallium nitride (GaN) thin film, the gallium nitride (GaN) substrate ideal for such a nitride-based LED as the substrate 100, but gallium nitride (GaN) The single crystal substrate using is difficult to manufacture and has a disadvantage of high unit cost. Accordingly, sapphire, silicon (si), silicon carbide (SiC), gallium arsenide (GaAs), zinc oxide (ZnO), and the like, which are relatively easy to obtain and low in cost, may be used.

In addition, a rear surface of the substrate 100 may further include a reflecting plate (not shown) for increasing light efficiency, and the reflecting plate may be formed by a method such as sputtering or evaporation. The substrate 100 is introduced into the growth equipment by introducing hydrogen gas (H 2) at a high temperature of 1000 ° C. to 1300 ° C. for a predetermined time before epi growth, and then impurities are removed through heat treatment.

As the substrate for epitaxial growth, sapphire, zinc oxide (ZnO), gallium nitride (GaN), silicon carbide (SiC), and aluminum nitride (AIN) may be used. Can be.

The buffer layer 115 is intended to complement the characteristics of the substrate 100. If the n-GaN layer 120, which is an epi layer, is directly grown on the silicon carbide (SiC) substrate, the high quality device may be caused by lattice mismatch. Since it is difficult to fabricate, it is formed between the substrate 100 and the n-GaN layer 120 to overcome this. It is usually formed of aluminum nitride (AlN) or gallium nitride (GaN).

The n-GaN layer 120 serves to supply electrons to the multi-quantum well layer 130 which will be described later. The n-GaN layer 120 is formed on the buffer layer 115, and in some cases, the n-GaN layer 120 serves as a base layer of the n-GaN layer 120. It may be formed by growing a undoped un-GaN layer and growing a gallium nitride (GaN) semiconductor layer 120 by doping an n-type impurity thereon. Si may be used as the n-type impurity, and a first electrode pad 124 to be described later is formed in a portion of the n-GaN layer 120 according to the type of the LED device.

The aforementioned un-GaN layer is formed to a thickness of 0.5 to 3.0 um, and the doped n-GaN layer is formed to a thickness of about 3.0 um or less.

The first electrode pad 124 is for wire bonding when the LED package is mounted in the LED package after the chip process. The first electrode pad 124 is formed on a portion of the n-GaN layer 210 etched.

The multi-quantum well layer 130 serves to convert extra energy into light by recombining electrons and holes supplied from the n-GaN layer 12013 and the p-type gallium nitride (GaN) layer described later. The multiple quantum well layer (MQW) has a structure in which a plurality of quantum barrier layers 131 and quantum well layers 132 are alternately stacked, and the quantum barrier layers 131 and quantum well layers 132 are alternately stacked. Control the composition and thickness of the panel to obtain the required wavelength of the band.

The quantum barrier layer 131 and the quantum well layer 132 are grown at a temperature lower than the aforementioned n-GaN layer 120 at 700 ° C to 900 ° C, and the quantum well layer of the multi-quantum well layer 130 ( 131 is made of Al _Z In _W Ga _{1 -Z- W} N (z + w ≦ 1, 0 ≦ z ≦ 1,0 ≦ w ≦ 1), and the quantum barrier layer 132 is made of Al _X In _Y Ga _1. -X _{- Y} N (x + y ≦ 1, 0 ≦ x ≦ 1,0 ≦ y ≦ 1).

Here, the quantum well layer 132 has a larger indium (In) content than the quantum barrier layer 131, and the indium (In) flow of the edge portion, that is, the portion in contact with the quantum barrier layer 131, is centered. It is much larger than the part.

Accordingly, even if indium (In) of the quantum well layer 132 is diffused into the quantum barrier layer 131, the energy band of the quantum well layer 132 has a uniform shape.

In addition, the p-GaN layer 140 provides holes to the multi-quantum well layer 130, and Mg, Zn, and Be may be used as the dopant.

The transparent electrode layer 142 is formed for ohmic contact between the p-GaN layer 140 and the second electrode pad 144 for wire bonding, and the p-GaN layer 140 described above. Since gallium nitride (GaN) has a high resistance and a property that current is not sufficiently diffused in the layer, the transparent electrode layer 142 serves to compensate for this property. The transparent electrode layer 142 has the same area as the p-GaN layer 140 in order to uniformly flow current to the entire surface of the device, and is made of an indium tin oxide film (ITO) and a cadmium tin oxide film (CTO). It is formed of a transparent conductive oxide film layer such as).

The second electrode pad 144 is for electrically connecting the p-GaN layer 140 to an external power supply means through wire bonding. A typical LED device is mounted in an LED package including a lead frame and an encapsulant. The second electrode pad 144 described above is electrically connected to the lead frame. The second electrode pad 144 is etched from the top of the transparent electrode layer 142 to the top of the n-GaN layer 120 to a predetermined depth to expose a portion of the n-GaN layer 120 and then the first electrode pad 124. It is preferably formed with). At this time, the etching method used may be a dry etching method.

The LED device having such a structure has a higher quantum well layer of the quantum well layer 130 having a uniform indium (In) composition ratio, thereby having a higher light efficiency than the conventional LED device.

4 is a diagram schematically illustrating an energy band of an LED device according to an exemplary embodiment of the present invention. As illustrated, a multi-quantum well is provided between an n-GaN layer 120 and a p-GaN layer 140. In the structure 130, the energy band E has a form in which the quantum barrier layer 131 and the quantum well layer 132 are alternately repeated. According to the present invention, indium (In) flow is increased in the edge region 133 of the quantum well layer 132 in consideration of the amount of diffusion of indium (In) into the quantum barrier layer 131, and thus the edge region 133 ) And the energy band E of the central region 134 become uniform.

5A to 5D are schematic views illustrating a flow of indium (In) that is variably controlled during growth of a multi-quantum well layer of an LED device according to an exemplary embodiment of the present invention.

As shown in FIG. 5A, in the multi-quantum well layer of the LED device according to the exemplary embodiment of the present invention, the quantum well layer and the quantum barrier layer are alternately grown, and particularly in the case of the quantum well layer, the edge region 123 of each layer. The flow rate is larger than the central region 124 and decreases linearly toward the center, and then adjusts to maintain the uniformity in the central region.

In addition, as a quantum well layer having a different indium (In) composition ratio, it can be adjusted to reduce the indium (In) flow in the form of a logarithm function from the edge region 123 to the central region 124 ( FIG. 5B), or may be adjusted to gradually reduce the indium (In) flow in the exponential form from the edge region 123 to the central region 124 (FIG. 5C).

Alternatively, as illustrated in FIG. 5D, the same indium (In) flow may be provided from the edge region 123 of the quantum well layer to a predetermined thickness in the center direction 124, but only the portion of the central region 124 may be formed. It can also be adjusted to reduce flow.

Hereinafter, a method of manufacturing an LED device according to a preferred embodiment of the present invention with reference to the drawings.

6 is a flowchart illustrating a method of manufacturing an LED according to an embodiment of the present invention.

As shown, the LED device manufacturing method of the present invention is a heat treatment step (S300), a buffer layer forming step (S310), n-type semiconductor layer forming step (S320), variable control method multi-quantum layer forming step (S330), p Type semiconductor layer forming step (S340) and electrode pad forming step (S350).

Specifically, the heat treatment step (S300) is a step for removing impurities that may remain on the substrate, the substrate by introducing hydrogen gas (H2) in a high temperature growth equipment of 1000 ℃ to 1300 ℃ for a predetermined time Remove impurities on the phase.

The buffer layer forming step S310 is a step of forming a buffer layer for growth of the GaN layer through a method such as MOCVD or MBE in order to grow the GaN layer on the sapphire substrate or silicon carbide substrate.

The n-type semiconductor layer forming step (S320) is a step of forming an un-GaN layer and an n-GaN layer on a buffer layer, first forming an undoped un-GaN layer without doping impurities, and going to the top thereof. It is a step of forming an n-GaN layer by doping an n-type impurity Si, Ge or Sn.

The variable control method of forming a multi quantum well layer (S330) is a step of forming a multi quantum well (MQW) layer on the n-type GaN layer. The multi-quantum well layer is formed of one or more Al _X In _Y Ga _{1 -X- Y} N (x + y ≦ 1, 0 ≦ x ≦ 1,0 ≦ y ≦ 1) and Al _Z In _W Ga _{1- Z} of _W N (z + w≤1, 0≤z≤1,0≤w≤1) indium (in) composition is at the edge region and the central region of that, the quantum well layer to form alternately a well layer made of _a- By adjusting the flow variably, the energy band imbalance due to the diffusion of indium (In) composition is compensated for.

The p-type semiconductor layer forming step (S340) is a step of forming a p-GaN layer on the multi-quantum well layer, and is a step of forming a p-GaN layer by doping Mg, which is an impurity.

Subsequently, the electrode pad forming step (S350) is a step of forming a first national pad electrically connected to the p-GaN layer and a second electrode pad electrically connected to the n-GaN layer. In this step, a portion of the light diffusion layer is removed to expose a portion of the transparent electrode layer, and a portion of the p-GaN layer, the multi-quantum well layer, and the n-type GaN layer is exposed so that a portion of the n-GaN layer is exposed. Etch to height. Thereafter, first and second electrode pads are formed in each of the exposed regions.

In operation S350, the method may further include forming a transparent electrode layer for ohmic contact of the p-GaN layer by using a material such as ITO on the upper surface of the p-GaN layer.

On the other hand, the above-described LED device of the present invention (Mold), such as a synthetic resin on a ceramic substrate to protect the device from impacts, such as can be applied from the outside, to compensate for the light extraction efficiency, to have a heat dissipation function, etc. It is used as a package.

Hereinafter, an example of a liquid crystal display module including a packaged LED device according to an embodiment of the present invention will be described with reference to the drawings.

7 is an exploded perspective view illustrating an example of a structure of a liquid crystal display device module including an LED package according to an embodiment of the present invention.

As illustrated, the liquid crystal display device module of the present invention includes a backlight unit 450 including a liquid crystal panel 400 and an LED package, and various apparatuses 430, 440, and 460 mounted thereon.

In detail, the liquid crystal panel 400 includes a first substrate and a second substrate bonded to each other by a predetermined distance, and a liquid crystal layer interposed therebetween. The liquid crystal panel 400 is connected to the driver PCB 410 to implement an image as a signal is applied therefrom. In addition to the thin film transistor, various wirings and pixel electrodes are formed on the first substrate, and the color filter layer and the black matrix BM are formed on the second substrate. The driver PCB 410 is mounted with a gate driver IC providing a gate signal for driving the thin film transistor and a data driver IC providing a data signal to the pixel electrode.

The liquid crystal panel 400 will be described in more detail. In the first substrate, a plurality of gate lines and a data line orthogonal to the plurality of gate lines are formed on the first substrate to define a plurality of pixel regions. A thin film transistor which is a switching element is formed. In addition, the thin film transistor includes a gate electrode connected to a gate line, a semiconductor layer formed by stacking amorphous silicon, etc. on the gate electrode, a source electrode and a drain electrode formed on the semiconductor layer and electrically connected to the data line and the pixel electrode. Is done.

The second substrate is a color filter composed of a plurality of sub-color filters that realize red, green, and blue colors, and a black that separates each sub-color filter and blocks light passing through the liquid crystal layer. It consists of a matrix BM.

The first and second substrates configured as described above are joined to face each other by sealants formed on the outer side of the image display area to form the liquid crystal panel 400. Further, the first and second substrates are formed on the front and rear surfaces of the liquid crystal panel 400, respectively. The first polarizing plate and the second polarizing plate are attached to polarize the light incident and output to the liquid crystal panel 400 to realize an image.

In addition, the backlight unit 450 includes a plurality of LED packages 451 disposed on at least one side surface in the lower direction of the liquid crystal panel 400 and emitting light, and a lamp substrate on which the LED packages 451 are bonded ( 452, a light guide plate 453 disposed under the liquid crystal panel 400 to guide light emitted from the LED package 451 to the liquid crystal panel 400, and a liquid crystal panel 400 and a light guide plate ( 453 and an optical sheet 454 including one or more diffusion sheets and prism sheets provided to the liquid crystal panel 400 to diffuse and collect light emitted from the light guide plate 453 and disposed below the light guide plate 453. And a reflecting plate 455 reflecting light guided downward.

In this case, the LED package 451 may be used in a manner in which each of the red, green, and blue monochromatic light emits, or one package emits white light.

When the LED package emitting monochromatic light is disposed, red, green, and blue monochromatic light LED packages are alternately arranged at regular intervals, and the monochromatic light emitted from the white light is mixed with white light and then supplied to the liquid crystal panel 400, and the white light is supplied. When the LED package emits light, a plurality of LED packages are disposed at predetermined intervals to supply white light to the liquid crystal panel 400.

In addition, in a manner in which one package emits white light, if the LED device 351, which is a light source, is a red light emitting device that emits red light, a cyan fluorescent layer made of a green fluorescent material and a blue fluorescent material is further included inside the lead frame. When the LED device is a green light emitting device that emits green light, the red and blue fluorescent layers made of a red phosphor and a blue phosphor are further included inside the lead frame. In addition, in the case of a blue light emitting device emitting blue light, a red green fluorescent layer including a red phosphor and a green phosphor is further included inside the lead frame.

In addition, in the drawing, an example in which the LED package 451 is disposed on one side of the light guide plate as a side type backlight unit, is disposed on both sides of the light guide plate, or the backlight is disposed on the entire back surface of the liquid crystal panel. The packaged LED device of the invention can also be applied to a unit.

In addition, the LED package 451 is bonded side by side to the lamp substrate 452 made of a plurality of metal or PCB substrate. The lamp substrate 452 is disposed along the side of the light guide plate 453, and supplies power to the LED package 451 applied from an external power supply.

According to this structure, the LED package 451 directly enters light toward the side of the light guide plate 453 when driven.

The light guide plate 453 is for guiding light emitted from the LED package 451 to the liquid crystal panel 400, and the light incident to one side of the light guide plate 453 is reflected from the top and bottom surfaces of the light guide plate 453, and the other side thereof. After propagating up, the light is emitted to the upper portion of the light guide plate 453.

In this case, the light guide plate 453 may be formed in a rectangular parallelepiped having different thicknesses at both ends, and a predetermined pattern or groove may be formed on the bottom surface to scatter incident light.

The optical sheet 454 improves the efficiency of light emitted from the light guide plate 453 and serves to supply the liquid crystal panel 400. The optical sheet 454 is a diffusion sheet for diffusing the light emitted from the light guide plate 453, and a plurality of prism sheets for condensing the light diffused by the diffusion sheet to supply uniform light to the liquid crystal panel 400. Is done.

The backlight unit 450 having such a structure is disposed so that the light guide plate and the lamp substrate 452 to which the LED package 451 is bonded are disposed, and the optical sheet 454 and the reflector plate 455 are disposed on the front and rear surfaces of the light guide plate. It is stored in the bottom 460.

In addition, the liquid crystal panel 400 is seated inside the support main 430 and is supported and fixed as the top case 440 is coupled to the support main 430 at the top thereof, and the backlight unit 450 is accommodated in the rear side. The liquid crystal display module is completed by being combined with the cover bottom 460.

According to this structure, the LED device manufactured by the manufacturing method of the present invention is packaged and used for the liquid crystal display module.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments.

110 substrate 115 buffer layer
120: n-GaN layer 124: first electrode pad
130: multi-quantum well layer 131: barrier layer
132: well layer 140: p-GaN layer
144: second electrode pad

Claims (6)

Forming a buffer layer on the substrate;
Sequentially forming an un-GaN layer and an n-GaN layer on the buffer layer;
On the n-GaN layer, a plurality of Al _X In _Y Ga _{1 -X - Y} N (x + y ≦ 1, 0 ≦ x ≦ 1,0 ≦ y ≦ 1) quantum barrier layers and Al _Z In _W Ga _{1 − A} quantum well layer having _ZW N (z + w ≦ 1, 0 ≦ z ≦ 1,0 ≦ w ≦ 1) is alternately formed, but the composition ratio of indium (In) in the edge region of the quantum well layer is equal to the center region. Forming to have;
Forming a p-GaN layer on the multi-quantum well layer; And,
Forming first and second electrode pads over the p-GaN layer and one region of the n-GaN layer, respectively;
Method of manufacturing an LED device comprising a. The method of claim 1,
Forming the indium (In) composition of the edge region of the quantum well layer to have the same composition ratio as the central region,
The method of manufacturing an LED device, characterized in that the flow of the indium (In) from the edge region to the central region of the quantum well layer is reduced to one of a linear, logarithmic, or exponential form. The method of claim 1,
Forming the indium (In) composition of the edge region of the quantum well layer to have the same composition ratio as the central region,
Flowing indium (In) of a first flow from an edge region to one region of the quantum well layer; And,
Flowing indium (In) of a second flow smaller than the first flow from the one region to the central region;
Method of manufacturing an LED device comprising a. The method of claim 1,
And before the forming of the buffer layer on the substrate, further comprising heat treating the substrate. The method of claim 1,
Forming an un-GaN layer and an n-GaN layer sequentially on the buffer layer,
Forming the un-GaN layer to a thickness of 0.5 um to 5.0 um; And,
Forming an n-GaN layer having a thickness of 3.0 μm or less on top of the un-GaN layer
Method of manufacturing an LED device comprising a. A liquid crystal display module using as a light source an LED package mounted with an LED device manufactured by the manufacturing method according to claim 1,
A liquid crystal panel;
A support main on which the liquid crystal panel is seated;
A top case positioned above the liquid crystal panel to surround the liquid crystal panel and to be coupled to the support main;
A backlight unit positioned below the liquid crystal panel and including the LED package and the optical member to provide light to the liquid crystal panel; And,
The cover bottom is mounted on the liquid crystal panel and the backlight unit, and is disposed on the rear surface of the backlight unit to be coupled to the top case.
Liquid crystal display module comprising a.

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