KR20120061517A - Light emitting device, Light emitting device package and light system - Google Patents

Abstract

PURPOSE: A light emitting device, a light emitting device package, and a lighting system are provided to improve light emitting efficiency of the light emitting device by forming a light-transmissive structure with a uniform size and a separation distance. CONSTITUTION: A first electrode layer(130) is formed on a support substrate. A light emitting structure(140) comprises a second conductivity type semiconductor layer, an active layer, and a first conductivity type semiconductor layer formed on the first electrode layer. A concavo-convex region(160) and a light-transmissive structure(170) are formed one or more regions of the upper surface of the second conductivity type semiconductor layer. The light-transmissive structure is formed higher than the concavo-convex region.

Description

Light emitting device, light emitting device package and light system

Embodiments relate to light emitting devices, light emitting device packages and lighting systems.

LED (Light Emitting Diode) is a device that converts electrical signals into infrared, visible light or light using the characteristics of compound semiconductors. It is used in household appliances, remote controls, display boards, The use area of LED is becoming wider.

In general, miniaturized LEDs are made of a surface mounting device for mounting directly on a PCB (Printed Circuit Board) substrate, and an LED lamp used as a display device is also being developed as a surface mounting device type . Such a surface mount device can replace a conventional simple lighting lamp, which is used for a lighting indicator for various colors, a character indicator, an image indicator, and the like.

As the use area of the LED is widened as described above, it is important to increase the luminance of the LED as the brightness required for a lamp used in daily life and a lamp for a structural signal is increased. However, consideration should be given to not only luminous luminance but also light extraction efficiency and distribution of light distribution patterns.

The embodiment provides a light emitting device and a light emitting device package having a new light extraction structure.

The embodiment provides a light emitting device and a light emitting device package having improved light distribution.

The light emitting device according to the embodiment includes a light emitting structure including a support substrate, a first electrode layer formed on the support substrate, a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer formed on the first electrode layer; 2 includes a concave-convex portion and a light-transmissive structure formed in at least one region of the upper surface of the conductive semiconductor layer, wherein the light-transmissive structure is formed higher than the concave-convex portion.

On the other hand, the light-transmitting structure may be formed 1um to 3um higher than the uneven portion.

On the other hand, the transparent structure may be formed of a material having a refractive index of 1.5 to 2.

On the other hand, the light-transmitting structure may have a uniform size.

On the other hand, the light-transmitting structure may have a uniform separation distance.

The light emitting device according to the embodiment may improve the light extraction efficiency.

The light emitting device according to the embodiment can provide a wide range of light distribution patterns.

Embodiments can improve reliability for light emitting devices, light emitting device packages, and lighting systems.

1A is a cross-sectional view showing the structure of a light emitting device according to the embodiment;
1B is a cross-sectional view showing the structure of a light emitting device according to the embodiment;
1C is a cross-sectional view showing the structure of a light emitting device according to the embodiment;
1D is a plan view showing a region of an upper surface of a light emitting device according to the embodiment;
2A is a view showing a light distribution pattern of a comparative example;
2B is a view showing a light distribution pattern of an embodiment;
3A is a perspective view showing a light emitting device package including a light emitting device of the embodiment;
3B is a cross-sectional view showing a light emitting device package including a light emitting device of the embodiment;
4A is a perspective view illustrating a lighting device including a light emitting device module according to an embodiment;
4B is a cross-sectional view showing a lighting apparatus including a light emitting device module according to an embodiment;
5 is an exploded perspective view illustrating a backlight unit including a light emitting device module according to an embodiment; and
6 is an exploded perspective view illustrating a backlight unit including a light emitting device module according to an embodiment.

In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure is formed "on" or "under" a substrate, each layer The terms " on "and " under " encompass both being formed" directly "or" indirectly " In addition, the criteria for the top or bottom of each layer will be described with reference to the drawings.

In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description. In addition, the size of each component does not necessarily reflect the actual size.

Hereinafter, exemplary embodiments will be described in more detail with reference to the accompanying drawings.

1A and 1B are cross-sectional views illustrating a structure of a light emitting device according to an embodiment, and FIG. 1C is a plan view illustrating a region of an upper surface of the light emitting device of FIGS. 1A and 1B.

1A to 1C, the light emitting device 100 according to the embodiment includes a support substrate 110, a first electrode layer 130 formed on the support substrate 110, and a first electrode layer 130. A light emitting structure 140 in which the first conductive semiconductor layer 142, the active layer 144, and the second conductive semiconductor layer 146 are sequentially stacked, and at least one region of an upper surface of the second conductive semiconductor layer 146. Concave and convex portion 160 and the light-transmitting structure 170 is formed, the light-transmitting structure 170 is formed higher than the concave-convex portion 160.

The support substrate 110 may be formed using a material having excellent thermal conductivity and may be formed of a conductive material, and may be formed using a metal material or a conductive ceramic. The conductive support substrate 110 may be formed of a single layer and may be formed of a dual structure or multiple structures.

That is, the support substrate 110 may be formed of any one selected from a metal, for example, Au, Ni, W, Mo, Cu, Al, Ta, Ag, Pt, or Cr, or may be formed of two or more alloys. The above materials can be laminated and formed. In addition, the support substrate 110 is Si, Ge, GaAs, ZnO, SiC, SiGe, GaN, Ga ₂ O ₃ It may be implemented as a carrier wafer such as.

The support substrate 110 may facilitate the emission of heat generated from the light emitting device 100 to improve the thermal stability of the light emitting device 100.

The first electrode layer 130 is formed on the support substrate 110. The first electrode layer 130 may include at least one of an ohmic layer (not shown), a reflective layer (not shown), and a bonding layer (not shown). For example, the first electrode layer 130 may be a structure of an ohmic layer / reflective layer / bonding layer, a stacked structure of an ohmic layer / reflective layer, or a structure of a reflective layer (including ohmic) / bonding layer, but is not limited thereto. For example, the first electrode layer 130 may have a form in which a reflective layer and an ohmic layer are sequentially stacked on the insulating layer.

The reflective layer (not shown) may be disposed between the ohmic layer (not shown) and the insulating layer (not shown), and have excellent reflective properties such as Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg , Zn, Pt, Au, Hf, or a combination of these materials, or a combination of these materials or IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, to form a multi-layer using a transparent conductive material such as Can be. In addition, the reflective layer (not shown) may be laminated with IZO / Ni, AZO / Ag, IZO / Ag / Ni, AZO / Ag / Ni, or the like. In addition, when the reflective layer (not shown) is formed of a material in ohmic contact with the light emitting structure (eg, the first conductive semiconductor layer 142), the ohmic layer (not shown) may not be separately formed, but is not limited thereto. .

The ohmic layer (not shown) is in ohmic contact with the bottom surface of the light emitting structure 140, and may be formed in a layer or a plurality of patterns. The ohmic layer (not shown) may be selectively used as a light transmitting conductive layer and a metal, for example, indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), and indium aluminum zinc (AZO). oxide), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrO _x , RuO _x , RuO _x / ITO It may be implemented in a single layer or multiple layers using one or more of, Ni, Ag, Ni / IrO _x / Au, and Ni / IrO _x / Au / ITO. The ohmic layer (not shown) is for smoothly injecting a carrier into the first conductive semiconductor layer 142 and is not necessarily formed.

In addition, the first electrode layer 130 may include a bonding layer (not shown), wherein the bonding layer (not shown) may be a barrier metal or a bonding metal, for example, Ti, Au, Sn, or Ni. It may include, but is not limited to, at least one of Cr, Ga, In, Bi, Cu, Ag, or Ta.

The light emitting structure 140 may include at least a first conductive semiconductor layer 142, an active layer 144, and a second conductive semiconductor layer 146, and include a first conductive semiconductor layer 142 and a first conductive semiconductor layer ( The active layer 144 may be interposed between 146.

The first conductive semiconductor layer 142 may be formed on the first electrode layer 130. The first conductive semiconductor layer 142 may be implemented as a p-type semiconductor layer doped with a p-type dopant. The p-type semiconductor layer contains a semiconductor material, for example, having a compositional formula of _{In x Al y Ga 1 -x- y} N (0 = x = 1, 0 = y = 1, 0 = x + y = 1) GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN and the like may be selected, and p-type dopants such as Mg, Zn, Ca, Sr, and Ba may be doped.

An active layer 144 is formed on the first conductive semiconductor layer 142. The active layer 144 may be formed of a single or multiple quantum well structure, a quantum-wire structure, or a quantum dot structure by using a compound semiconductor material of a group III-V group element.

The active layer 144 is in this case formed of a quantum well structure, for example, having a compositional formula of _{In x Al y Ga 1 -x- y} N (0 = x = 1, 0 = y = 1, 0 = x + y = 1) It may have a single or quantum well structure having a well layer and a barrier layer having a composition formula of In _a Al _b Ga _{1 -a- b} N (0 = a = 1, 0 = b = 1, 0 = a + b = 1). Can be. The well layer may be formed of a material having a lower band gap than the band gap of the barrier layer.

A conductive clad layer (not shown) may be formed on or under the active layer 144. The conductive clad layer (not shown) may be formed of an AlGaN-based semiconductor and may have a band gap larger than that of the active layer 144.

The second conductive semiconductor layer 146 may be formed on the active layer 144. The second conductive semiconductor layer 146 may be implemented as an n-type semiconductor layer, the n-type semiconductor layer is for _{example, In x Al y Ga 1 -x-} y N (0 = x = 1, 0 = y = 1, 0 = x + y = 1)), for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, and the like, and may be selected, for example, Si, Ge, Sn, Se An n-type dopant such as Te is doped.

The second conductive semiconductor layer 146 may include a second electrode layer 150 electrically connected to the second conductive semiconductor layer 146, and the second electrode layer 150 may include at least one pad or / and It includes an electrode having a predetermined pattern. The second electrode layer 150 may be disposed in a center region, an outer region, or a corner region of the top surface of the second conductive semiconductor layer 146, but is not limited thereto. An electrode having at least one finger pattern may be connected to the pad. The second electrode layer 150 may be disposed in a region other than the second conductive semiconductor layer 146, but is not limited thereto.

The second electrode layer 150 is a conductive material, for example, In, Co, Si, Ge, Au, Pd, Pt, Ru, Re, Mg, Zn, Hf, Ta, Rh, Ir, W, Ti, Ag, It can be formed in a single layer or multiple layers using a metal or alloy selected from Cr, Mo, Nb, Al, Ni, Cu, and WTi.

The second electrode layer 150 may be disposed on the flat upper surface of the second conductive semiconductor layer 146, or may be disposed on the uneven uneven portion 160, but is not limited thereto.

The light emitting structure 140 may include a third conductive semiconductor layer (not shown) having a polarity opposite to that of the first conductive semiconductor layer 142 under the first conductive semiconductor layer 142. In addition, the first conductive semiconductor layer 142 may be an n-type semiconductor layer, and the second conductive semiconductor layer 146 may be implemented as a p-type semiconductor layer. Accordingly, the light emitting structure layer 140 may include at least one of an N-P junction, a P-N junction, an N-P-N junction, and a P-N-P junction structure.

The passivation 180 may be formed on side surfaces and the upper region of the light emitting structure 140, and the passivation 180 may be formed of an insulating material.

The second conductive semiconductor layer 146 may include an uneven portion 160 formed on a portion of the surface or the entire region of the upper portion.

The uneven portion 160 may be formed on a portion or the entire area of the upper surface of the second conductive semiconductor layer 146. The uneven portion 160 may be formed by performing etching on at least one region of the upper surface of the light emitting structure 140, for example, the upper surface of the second conductive semiconductor layer 146. The etching process includes a wet or / and dry etching process, the etching surface is n-face, can be easily etched by wet etching, the surface roughness can be improved compared to the Ga-face. As the etching process is performed, an uneven portion 160 that forms a light extraction structure is formed on the top surface of the second conductive semiconductor layer 146, and the height may be about 0.1 μm to about 3 μm. The uneven portion 160 may be irregularly formed in a random size, but is not limited thereto. The uneven portion 160 is an uneven upper surface and may include at least one of a texture pattern, an uneven pattern, and an uneven pattern.

Concave-convex portion 160 may be formed so that the side cross section has a variety of shapes, such as a cylinder, a polygonal pillar, a cone, a polygonal pyramid, a truncated cone, a polygonal truncated cone, preferably comprises a horn shape.

On the other hand, the uneven portion 160 may be formed by a method such as PEC (photo electrochemical), or a wet etching method using a KOH solution, but is not limited thereto. As the uneven portion 160 is formed on the upper surface of the second conductive semiconductor layer 146, the light generated from the active layer 144 is totally reflected from the upper surface of the second conductive semiconductor layer 142 to form the light emitting structure 140. Since it can be prevented from being reabsorbed or scattered in, it can contribute to the improvement of the light extraction efficiency of the light emitting device (100).

At least one translucent structure 170 is formed in at least one region of the upper surface of the second conductive semiconductor layer 146, and the translucent structure 170 is a material different from the conductive semiconductor layer, for example, the second conductive semiconductor layer 146. As a material, the material has a refractive index lower than the refractive index of the second conductive semiconductor layer 146 and higher than that of the air layer, and may include an insulating material and / or a conductive material. The insulating material includes at least one of SiO2, SiOx, SiN, SiOxNy, Si3N4, Al2O3, TiO2, and the conductive material may be indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), Indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx And RuOx / ITO.

The light-transmitting structure 170 may be formed of a light-transmissive resin series such as silicon or epoxy, and as another example, at least a part of the light-transmitting structure 170 may be filled with air.

For example, the light transmissive material forming the translucent structure 170 may be a material having a refractive index of 1.5 to 2. This is a refractive index lower than the refractive index of the second conductive semiconductor layer, which can improve the light distribution pattern and improve the light extraction efficiency of the light emitting device.

On the other hand, the light-transmitting structure 170 may be formed in several regions of the upper surface of the second conductive semiconductor layer 146, the region in which the light-transmissive structure 170 is formed is a partial region located within the region where the uneven portion 160 is formed Can be. On the other hand, each light-transmitting structure 170 may be formed so that the side cross-section has a variety of shapes, such as polygons, cylinders, polygonal pillars, cones, polygonal pyramids, truncated cones, polygonal truncated cones, lens shape, but is not limited thereto.

As shown in FIG. 1A, the light-transmitting structure 170 may form an uneven portion 160 by etching the upper surface of the second conductive semiconductor layer 146, and may include a mask pattern in at least one region on the uneven portion 160. (Not shown) may be formed by inserting, depositing, or applying a light-transmitting material into another region where a mask pattern (not shown) is not formed, or as shown in FIG. 1B. It is formed by etching the partial region of the upper surface of the conductive semiconductor layer 146 to form the uneven portion 160 and inserting, depositing, or applying a light-transmitting material to the other region where the uneven portion 160 is not formed. Alternatively, before forming the concave-convex portion 160 in the upper region of the second conductive semiconductor layer 146, the light-transmitting structure is formed in at least one region of the second conductive semiconductor layer 146, and the other regions are etched, or It may be etched to form the uneven portion 160. It said, does not limited thereto.

Meanwhile, the etching process may be performed by dry etching and / or wet etching. In addition, the size of the mask pattern and the spacing between the mask patterns may be the same or different, and thus the width and spacing of the light transmitting structure may be adjusted.

The height of the light-transmitting structure 160 may be formed higher than the height of the uneven portion 160. Preferably, as shown in FIG. 1A, the difference t between the height of the light-transmitting structure 160 and the height of the uneven portion 160 may be 1 um to 3 um.

The light-transmitting structure 170 is formed on the upper surface of the second conductive semiconductor layer 146, and the light-transmitting structure 170 is formed higher than the concave-convex portion 160, so that light generated from the active layer 144 is light-transmitting structure 170. Through forming the angle in the lateral direction through the light extraction efficiency of the light emitting device can be improved and the distribution of light distribution can be improved.

On the other hand, the upper surface 172 of the light-transmitting structure 170 may include a uniform region formed at least one of the height and curvature uniformly. Accordingly, the upper surface 172 of the light-transmitting structure 170 may include a flat surface as shown in FIG. 1A, or a curved surface as shown in FIG. 1C, but is not limited thereto.

Preferably, when viewing the light emitting device 100 from above, the area of the region in which the light-transmitting structure 170 is formed may be 50% to 70% of the area of the upper surface of the second conductive semiconductor layer 146. When the area of the region where the light-transmitting structure 170 is formed is smaller than 50% of the area of the upper surface of the second conductive semiconductor layer 146, it is difficult to secure the light extraction efficiency and the light distribution distribution improvement effect by the light-transmissive structure 170. Can be. On the other hand, if the area of the region where the light-transmitting structure 170 is formed is larger than 70% of the area of the upper surface of the second conductive semiconductor layer 146, the area where the uneven portion 160 is formed may be reduced and light extraction efficiency may decrease.

Preferably, each light transmitting structure 170 may have a uniform area when viewed from above, more preferably, the width of each light transmitting structure 170 may be 5um to 6um. In addition, preferably, each of the light-transmitting structure 170 may be formed to have a uniform distance, the distance of each light-transmitting structure 170 may be 2um to 3um.

Since the light-transmitting structure 170 is formed to have a uniform size and a distance, the light distribution pattern of the light emitting device 100 can be improved and the light extraction of the light emitting device 100 can be made uniform, so that the light emitting device 100 The luminous efficiency of can be improved.

Meanwhile, the light transmissive structure 170 may be formed to have a lens shape as shown in FIG. 1D. Preferably, when the light transmitting structure 170 is formed in a lens shape, the diameter w of the light transmitting structure 170 may be 5um to 6um, the separation distance d of each light transmitting structure 170 is 2um to 3um Can be. On the other hand, the pitch (p) of the light-transmitting structure 170 may be 6um to 10um, preferably 7um to 10um.

2A and 2B are diagrams showing a light distribution pattern of a comparative example and an example.

2A and 2B, when the light distribution pattern of the light emitting device according to the embodiment is compared with the comparative example and the embodiment, unlike the light distribution pattern of the comparative example, the light distribution pattern of the embodiment is not concentrated in the center area and is distributed in a wider range. It can be seen that it has. Accordingly, the light distribution pattern of the light emitting device having the vertical electrode structure may be provided as a light distribution pattern having a wider target direction. Therefore, by making the light emitting device package having the light emitting device and the light distribution pattern on the illumination system wider, the light extraction efficiency of the light emitting device can be improved and the reliability of the light emitting device can be improved.

3A is a perspective view illustrating a light emitting device package including a light emitting device according to an embodiment, and FIG. 3B is a cross-sectional view illustrating a cross section of a light emitting device package including a light emitting device according to an embodiment.

3A and 3B, the light emitting device package 300 according to the embodiment includes a body 310 having a cavity formed therein, and first and second electrodes 340 and 350 mounted on the body 310. The light emitting device 320 electrically connected to the two electrodes and the encapsulant 330 formed in the cavity may be included, and the encapsulant 330 may include a phosphor (not shown).

The body 310 may be made of a resin material such as polyphthalamide (PPA), silicon (Si), aluminum (Al), aluminum nitride (AlN), photo sensitive glass (PSG), polyamide 9T ), new geo-isotactic polystyrene (SPS), metal materials, sapphire (Al ₂ O _3), beryllium oxide (BeO), is a printed circuit board (PCB, printed circuit board), it may be formed of at least one of ceramic. The body 310 may be formed by injection molding, etching, or the like, but is not limited thereto.

The inner surface of the body 310 may be formed with an inclined surface. The reflection angle of the light emitted from the light emitting device 320 can be changed according to the angle of the inclined surface, and thus the directivity angle of the light emitted to the outside can be adjusted.

The shape of the cavity formed in the body 310 as viewed from above may be circular, rectangular, polygonal, elliptical, or the like, and in particular, may have a curved shape, but is not limited thereto.

The encapsulant 330 may be filled in the cavity and may include a phosphor (not shown). The encapsulant 330 may be formed of transparent silicone, epoxy, and other resin materials, and may be formed by filling in a cavity and then ultraviolet or thermal curing.

The phosphor (not shown) may be selected according to the wavelength of the light emitted from the light emitting device 320 to allow the light emitting device package 300 to realize white light.

The fluorescent material (not shown) included in the encapsulant 330 may be a blue light emitting phosphor, a blue light emitting fluorescent material, a green light emitting fluorescent material, a yellow green light emitting fluorescent material, a yellow light emitting fluorescent material, Fluorescent material, orange light-emitting fluorescent material, and red light-emitting fluorescent material may be applied.

That is, the phosphor (not shown) may be excited by the light having the first light emitted from the light emitting device 320 to generate the second light. For example, when the light emitting element 320 is a blue light emitting diode and the phosphor (not shown) is a yellow phosphor, the yellow phosphor may be excited by blue light to emit yellow light, and blue light emitted from the blue light emitting diode As the yellow light generated by excitation by blue light is mixed, the light emitting device package 300 can provide white light.

Similarly, when the light emitting device 320 is a green light emitting diode, a magenta phosphor or blue and red phosphors (not shown) are mixed, and when the light emitting device 320 is a red light emitting diode, a cyan phosphor or blue light is used. The case where a green fluorescent substance is mixed is mentioned as an example.

Such phosphors (not shown) may be known such as YAG-based, TAG-based, sulfide-based, silicate-based, aluminate-based, nitride-based, carbide-based, nitridosilicate-based, borate-based, fluoride-based, and phosphate-based compounds.

Meanwhile, the first electrode 340 and the second electrode 350 may be mounted on the body 310. The first electrode 340 and the second electrode 350 may be electrically connected to the light emitting device 320 to supply power to the light emitting device 320.

The first electrode 340 and the second electrode 350 are electrically separated from each other, and may reflect light generated from the light emitting device 320 to increase light efficiency, and also generate heat generated from the light emitting device 320. Can be discharged to the outside.

In FIG. 2, the light emitting device 320 is mounted on the first electrode 350, but is not limited thereto. The light emitting device 320, the first electrode 340, and the second electrode 350 may be wire bonded. May be electrically connected by any one of the following methods, a flip chip method, and a die bonding method.

The first electrode 340 and the second electrode 350 are made of a metal material, for example, titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), and tantalum ( Ta, platinum (Pt), tin (Sn), silver (Ag), phosphorus (P), aluminum (Al), indium (In), palladium (Pd), cobalt (Co), silicon (Si), germanium ( Ge), hafnium (Hf), ruthenium (Ru), iron (Fe) may include one or more materials or alloys. In addition, the first electrode 340 and the second electrode 350 may be formed to have a single layer or a multi-layer structure, but is not limited thereto.

The light emitting device 320 may be mounted on the first electrode 340, and may be, for example, a light emitting device emitting light of red, green, blue, white, or UV (ultraviolet) light emitting device emitting ultraviolet light. However, the present invention is not limited thereto. In addition, one or more light emitting devices 320 may be mounted.

Further, the light emitting device can be applied to both a horizontal type in which the electrical terminals are formed on the upper surface, or to a vertical type or flip chip formed on the upper and lower surfaces.

On the other hand, the light emitting device 320 includes a light-transmitting structure (not shown), and the light-transmitting structure (not shown) includes a uniform surface (not shown) formed at least one of the height and curvature of the upper surface, thereby, the active layer (not shown) When the light generated from the light emitting device package 300 may be formed to form an angle laterally through the light transmitting structure (not shown), light extraction efficiency of the light emitting device package 300 may be improved, and light distribution may also be improved. In addition, since the light distributed from the light emitting device 320 may be distributed to a wider area, the light passing through the encapsulant 330 may proceed to a wide range without being concentrated and proceeded to a narrow area in the upward direction. The encapsulant 330 of the package 300 and the phosphor (not shown) in the encapsulant 330 may be prevented from aging more quickly, so that the reliability of the light emitting device package 300 may be further improved.

A light guide plate, a prism sheet, a diffusion sheet, and the like, which are optical members, may be disposed on a light path of the light emitting device package 300.

The light emitting device package 300, the substrate, and the optical member may function as a light unit. Another embodiment may be implemented as a display device, an indicator device, or a lighting system including the light emitting device 100 or the light emitting device package 300 described in the above embodiments, for example, the lighting system may be a lamp, a street lamp. It may include.

4A is a perspective view illustrating a lighting system including a light emitting device according to an embodiment, and FIG. 4B is a cross-sectional view illustrating a cross-sectional view taken along line D-D 'of the lighting system of FIG. 4A.

That is, FIG. 4B is a cross-sectional view of the illumination system 400 of FIG. 4A cut in the plane of the longitudinal direction Z and the height direction X, and viewed in the horizontal direction Y. As shown in FIG.

4A and 4B, the lighting system 400 may include a body 410, a cover 430 fastened to the body 410, and a closing cap 450 positioned at both ends of the body 410. have.

The lower surface of the body 410 is fastened to the light emitting device module 440, the body 410 is conductive and so that the heat generated from the light emitting device package 444 can be discharged to the outside through the upper surface of the body 410 The heat dissipation effect may be formed of an excellent metal material, but is not limited thereto.

In particular, the light emitting device package 444 includes a light emitting device (not shown), the light emitting device (not shown) includes a light transmitting structure (not shown), and the light transmitting structure (not shown) has at least a height and curvature of the upper surface. By including one uniformly formed uniform surface (not shown), the light extraction efficiency of the light emitting device package 444 and the illumination system 400 can be improved and the distribution of light distribution can be improved, and the reliability of the illumination system 400 can be improved. Can be further improved.

The light emitting device package 444 may be mounted on the substrate 442 in multiple colors and in multiple rows to form a module. The light emitting device package 444 may be mounted at the same interval or may be mounted at various separation distances as necessary to adjust brightness. As the substrate 442, a metal core PCB (MCPCB) or a PCB made of FR4 may be used.

The cover 430 may be formed in a circular shape to surround the lower surface of the body 410, but is not limited thereto.

The cover 430 protects the light emitting device module 440 from the outside and the like. In addition, the cover 430 may include diffusing particles to prevent glare of the light generated from the light emitting device package 444 and to uniformly emit light to the outside, and may also include at least one of an inner surface and an outer surface of the cover 430. A prism pattern or the like may be formed on either side. In addition, a phosphor may be applied to at least one of an inner surface and an outer surface of the cover 430.

On the other hand, since the light generated from the light emitting device package 444 is emitted to the outside through the cover 430, the cover 430 should be excellent in the light transmittance, sufficient to withstand the heat generated in the light emitting device package 444 The cover 430 is formed of a material including polyethylene terephthalate (PET), polycarbonate (PC), or polymethyl methacrylate (PMMA). It is desirable to be.

Closing cap 450 is located at both ends of the body 410 may be used for sealing the power supply (not shown). In addition, the closing cap 450 has a power pin 452 is formed, the lighting system 400 according to the embodiment can be used immediately without a separate device in the terminal from which the existing fluorescent lamps are removed.

5 is an exploded perspective view of a liquid crystal display including the light emitting device according to the embodiment.

5 is an edge-light method, and the liquid crystal display 500 may include a liquid crystal display panel 510 and a backlight unit 570 for providing light to the liquid crystal display panel 510.

The liquid crystal display panel 510 may display an image by using light provided from the backlight unit 570. The liquid crystal display panel 510 may include a color filter substrate 512 and a thin film transistor substrate 514 facing each other with a liquid crystal interposed therebetween.

The color filter substrate 512 may implement colors of an image displayed through the liquid crystal display panel 510.

The thin film transistor substrate 514 is electrically connected to the printed circuit board 518 on which a plurality of circuit components are mounted through the driving film 517. The thin film transistor substrate 514 may apply a driving voltage provided from the printed circuit board 518 to the liquid crystal in response to a driving signal provided from the printed circuit board 518.

The thin film transistor substrate 514 may include a thin film transistor and a pixel electrode formed of a thin film on another substrate of a transparent material such as glass or plastic.

The backlight unit 570 may convert the light provided from the light emitting device module 520, the light emitting device module 520 into a surface light source, and provide the light guide plate 530 to the liquid crystal display panel 510. Reflective sheet for reflecting the light emitted from the rear of the light guide plate 530 and the plurality of films 550, 566, 564 to uniform the luminance distribution of the light provided from the 530 and improve the vertical incidence ( 540.

The light emitting device module 520 may include a PCB substrate 522 so that a plurality of light emitting device packages 524 and a plurality of light emitting device packages 524 may be mounted to form a module.

In particular, the light emitting device package 524 includes a light emitting device (not shown), the light emitting device (not shown) includes a light transmitting structure (not shown), and the light transmitting structure (not shown) has at least a height and curvature of the upper surface. By including one uniformly formed uniform surface (not shown), the light extraction efficiency of the backlight unit 570 can be improved and the distribution of light distribution can be improved, and the reliability of the backlight unit 570 can be further improved.

Meanwhile, the backlight unit 570 includes a diffusion film 566 for diffusing light incident from the light guide plate 530 toward the liquid crystal display panel 510, and a prism film 550 for condensing the diffused light to improve vertical incidence. ), And may include a protective film 564 to protect the prism film 550.

6 is an exploded perspective view of a liquid crystal display including the light emitting device according to the embodiment. However, the parts shown and described in Fig. 5 are not repeatedly described in detail.

6 illustrates a direct method, the liquid crystal display 600 may include a liquid crystal display panel 610 and a backlight unit 670 for providing light to the liquid crystal display panel 610.

Since the liquid crystal display panel 610 is the same as that described with reference to FIG. 5, a detailed description thereof will be omitted.

The backlight unit 670 may include a plurality of light emitting device modules 623, a reflective sheet 624, a lower chassis 630 in which the light emitting device modules 623 and the reflective sheet 624 are accommodated, and an upper portion of the light emitting device module 623. It may include a diffusion plate 640 and a plurality of optical film 660 disposed in the.

LED Module 623 A plurality of light emitting device packages 622 and a plurality of light emitting device packages 622 may be mounted to include a PCB substrate 621 to form a module.

In particular, the light emitting device package 622 includes a light emitting device (not shown), the light emitting device (not shown) includes a light transmitting structure (not shown), the light transmitting structure (not shown) is at least of the height and curvature of the upper surface By including one uniformly formed uniform surface (not shown), the light extraction efficiency of the backlight unit 670 can be improved and the distribution of light distribution can be improved, and the reliability of the backlight unit 670 can be further improved.

The reflective sheet 624 reflects the light generated from the light emitting device package 622 in the direction in which the liquid crystal display panel 610 is positioned to improve light utilization efficiency.

On the other hand, the light generated from the light emitting device module 623 is incident on the diffusion plate 640, the optical film 660 is disposed on the diffusion plate 640. The optical film 660 includes a diffusion film 666, a prism film 650, and a protective film 664.

The configuration and the method of the embodiments described above are not limitedly applied, but the embodiments may be modified so that all or some of the embodiments are selectively combined so that various modifications can be made. .

Although the preferred embodiments have been illustrated and described above, the invention is not limited to the specific embodiments described above, and does not depart from the gist of the invention as claimed in the claims. Various modifications can be made by the person who has them, and these modifications should not be understood individually from the technical idea or the prospect of the present invention.

100 light emitting element 130 first electrode layer
140: light emitting structure 142: first conductive semiconductor layer
144: active layer 146: second conductive semiconductor layer
150: second electrode layer 160: uneven portion
170: translucent structure 180: passivation
300: light emitting device package.

Claims (17)

Support substrates;
A first electrode layer formed on the support substrate;
A light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer formed on the first electrode layer; And
An uneven portion and a light-transmitting structure formed in at least one region of an upper surface of the second conductive semiconductor layer,
The light-transmitting structure is formed higher than the uneven portion. The method of claim 1,
The light-transmitting structure is a light emitting device is formed 1um to 3um higher than the height of the uneven portion. The method of claim 1,
The light transmissive structure includes a light emitting device including a material having a refractive index lower than that of the first conductive semiconductor layer. The method of claim 1,
The light-transmitting structure includes a light emitting device comprising a material having a refractive index of 1.5 to 2. The method of claim 1,
The light transmitting structure,
SiO2, SiOx, SiN, SiOxNy, Si3N4, Al2O3, TiO2, indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IZAZO), indium gallium zinc oxide (IGZO) ), A light emitting device including at least one of indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx, RuOx / ITO. The method of claim 1,
The light-transmitting structure includes a uniform region in which at least one of height and curvature is uniformly formed. The method of claim 1,
The area of the region where the light-transmitting structure is formed is 50% to 70% of the area of the upper surface of the second conductive semiconductor layer. The method of claim 1,
The light-transmitting structure is a light emitting device having a uniform area. The method of claim 1,
The light emitting device has a width of 5 μm to 6 μm. The method of claim 1,
The light-transmitting structure is a light emitting device formed to have a uniform distance from each other. The method of claim 1,
The light-transmitting structure is a light emitting device disposed to have a distance of 2um to 3um apart from each other. The method of claim 1,
The light-transmitting structure is a light emitting device having a polygonal shape. The method of claim 1,
The light-transmitting structure is a light emitting device having a shape of a lens having a curvature. The method of claim 13,
The light-transmitting structure is a light emitting device formed to have a pitch of 6 um to 10 um. The method of claim 13,
The light-transmitting structure is formed a light emitting device having a pitch of 7um to 9um. A light emitting device package comprising the light emitting device of claim 1. An illumination system comprising the light emitting device of claim 1.

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