KR20120058723A - Surface diffusion-induced atomic layer deposition - Google Patents

Abstract

PURPOSE: A surface diffusion-induced atomic layer deposition method is provided to form a uniform atomic layer in deep pores of a carrier within a short time. CONSTITUTION: A surface diffusion-induced atomic layer deposition method comprises the steps of: providing a precursor to be chemically adsorbed on a porous carrier, supplying induction gas for surface diffusion of the precursor on the porous carrier, supplying inactivated gas for purging and discharging unadsorbed precursor, reaction byproducts, or induction gas, forming an atomic layer through reaction between the precursor and the reaction gas, and resupplying inactivated gas for purging.

Description

Surface diffusion-induced atomic layer deposition

The present invention relates to an atomic layer deposition method using a precursor, and more particularly, to a method of depositing an atomic layer using surface diffusion induction on a porous carrier having a high aspect ratio.

Atomic layer deposition (ALD) is a thin film deposition method developed by a chemist named T. Suntola in the early 1970s and is a type of vacuum deposition method modified from chemical vapor deposition (CVD). In a typical CVD deposition method, the substrate is placed in a vacuum reactor, and the precursors of the elements to be deposited are simultaneously supplied in a vapor state, so that the precursors are thermally decomposed or reacted on the substrate heated from several hundreds to thousands of degrees to form a thin film. The ALD deposition method uses a vacuum reactor and supplies a vapor of the precursor to form a thin film, but the similarity between the device and the process is that the mechanism of thin film deposition is different from the chemical adsorption rather than the thermal decomposition of the precursor.

Unlike CVD, ALD does not supply precursors simultaneously but instead crosses precursors to avoid pyrolysis of the precursors and direct gas phase reactions between them. For example, if a thin film of AB is deposited with ALD, one cycle of a typical ALD process consists of four steps of supply-purge of the first precursor A-feed-purge of the second precursor B and repeat the cycle to grow the film. (See FIG. 1). The purge step between the feed stages of precursors A and B is included here to remove excess precursors and adsorption by-products. On the other hand, for ALD, the substrate is heated but heated to a relatively low temperature (<300 ^° C.) compared to the substrate temperature of a typical CVD (where the temperature of the substrate is set lower than the pyrolysis temperature of the precursor).

In the above process, if the supplied precursors have a chemical structure that cannot chemisorb to the surface functional group of the substrate, the thin film does not grow even if the cycle is repeated. However, supplying a precursor capable of chemisorption with the surface functional group (eg, surface hydroxyl group, -OH) of the substrate allows the thin film to be grown in atomic layers by one cycle of the ALD process.

2 shows a reaction mechanism for forming a ZnO oxide film on a silicon substrate using diethyl zinc (DEZ) and water (water vapor). As shown in Figure 2 (a), DEZ supplied to the substrate chemisorbed to the -OH functional groups on the surface to form a surface having ethyl zinc-terminated groups, whereby ethane is generated as a by-product, extra DEZ in the purge step Is removed together. In the next step (Fig. 2b), the steam supply step, the supplied water molecules are chemisorbed to the ethyl zinc sites on the surface to recover the surface having hydroxy end groups, and ethane is also generated as a by-product, so that extra water is used in the purge step. Are removed together. After one cycle as described above, the surface of the substrate is repeatedly grown because the surface where the -OH adsorption sites are restored is made, so that the thin film grows.

As described above, since the growth of the thin film in ALD is made only by chemisorption of precursors, the thickness (deposition rate) of the thin film grown per cycle becomes very thin. The deposition rate of the thin film by the general ALD process is very slow, about 0.05 ~ 0.1 nm / cycle. For this reason, ALD deposition was developed in the 1970s but has not received much attention for over 20 years.

By the end of the 1990s, as ALD developed Al ₂ O ₃ with high dielectric constant for DRAM capacitor application using ALD method, interest in ALD spread rapidly in not only industry but also academia. The reason why the ALD deposition method was applied to DRAM was very slow, but the conformality and electrical properties of the thin film by the ALD deposition method were remarkably excellent, but the thickness of the thin film into the capacitor was very thin at ~ 10 nm, so the slow deposition rate was a big problem. Because it was not.

Since ALD thin films grow only by chemisorption, they exhibit so-called self-limiting growth behavior. As self-limiting growth behavior is shown in Fig. 3, increasing the precursor supply (or supply time) initially increases the deposition rate (growth thickness per cycle), but increasing the supply above a certain threshold does not increase the deposition rate. It is not a phenomenon. This phenomenon occurs because all surface functionalities present on the exposed surface are occupied by the precursor and then additionally supplied precursor molecules are no longer able to adsorb (multilayer adsorption in ALD usually does not occur). . Thus, general ALD process conditions refer to sufficient precursor supply (or supply time) for all adsorption sites to be occupied by the precursor.

When sufficient precursor is supplied, the ALD deposition rate in the flat substrate is generally 0.05 ~ 0.1 nm / cycle. Therefore, strictly speaking, the thickness that can be deposited by ALD is not continuous but discontinuous. For example, in an ALD process that deposits 0.1 nm per cycle, a 1 nm thick thin film can be obtained by repeating 10 cycles, but a uniform thin film of 1.05 nm thick cannot be obtained. However, this is not a problem in practice because, as mentioned earlier, the deposition thickness per cycle is in angstroms. That is, in most thin film applications, there is almost no difference in characteristics between 1 nm and 1.05 nm thin films.

As described above, since ALD grows a thin film only by chemisorption, if the precursor is supplied to the surface of the substrate in sufficient amount than the number of chemisorption sites present on the surface of the substrate, the thickness of the thin film is very large over the entire area of the substrate. Become uniform. If the above conditions are satisfied not only for the planar substrate but also for the substrate having a complicated three-dimensional structure, the thin film grows as it is along the three-dimensional shape of the substrate (called conformality). 4 is an example of a conformal film implemented by ALD. The deposition of silica on a trench structure substrate with an aperture ratio of 100 nm and a depth of 7 μm of 70: 1 aspect ratio shows perfect conformality (step coverage).

Due to its excellent conformality and electrical properties, ALD high-k dielectric thin films started with DRAM capacitor research, and now gate oxide (a few nm thick) is actively studied. In addition, a variety of materials are deposited and applied by ALD from an oxide film, a nitride film, and the like to a metal thin film.

On the other hand, in view of the excellent conformality of the ALD thin film has been studied by some players to use a catalyst to deposit a catalytically active metal on the inner surface of the porous material as a catalyst. In a general semiconductor process, even if the substrate used has a high aspect ratio, the aspect ratio is only a few tens. However, since the aspect ratio of the porous carrier is extremely high, more than thousands or tens of thousands, and the pore inlet diameter is very small, several nm, it becomes difficult to deposit active metals to the inner center of the carrier under general ALD conditions. The reason for this is that internal diffusion is required for the precursor molecules to reach the center of the carrier, but the rate of internal diffusion becomes slower than that of chemisorption (ie, the ALD process is limited by internal diffusion). In order to overcome this problem, the supply time of the precursor must be made very long. In this case, the economical efficiency of the ALD method is significantly reduced due to the waste of the precursor. As described above, in order to form the atomic layer on the porous carrier by the ALD method, new technical difficulties that do not appear in the conventional flat plate ALD will appear.

The problem to be solved by the present invention is to provide an atomic layer deposition method that can solve the problem that the deposition rate is discontinuous, the atomic layer formation is limited by the internal diffusion when the atomic layer is formed on a porous carrier having a high aspect ratio. In addition, the present invention provides a surface diffusion-induced atomic layer deposition method capable of uniformly forming an atomic layer even inside a deep pore of a carrier using a small amount of precursor.

The present invention to solve the above technical problem,

A method of depositing an atomic layer on a porous carrier by inducing surface diffusion of a precursor,

1) supplying a precursor on the porous carrier to chemisorb;

2) surface diffusion of the precursor by supplying an induction gas to the porous carrier to which the precursor is adsorbed;

3) supplying and purging the inert gas to exhaust unadsorbed precursors, reaction byproducts or induction gases;

4) exhausting the inert gas and supplying a reactant to form an atomic layer by reacting the chemisorbed precursor with the reactant;

5) It provides a surface diffusion induced atomic layer deposition method comprising the step of re-feeding and purging the inert gas.

The porous carrier usable in the present invention is preferably selected from alumina, silica and zeolite, and alumina is more preferable.

In addition, even when the aspect ratio of the porous carrier used in the present invention is 1x10 ³ to 10 ⁷ can be formed evenly the atomic layer. The pore size of the porous carrier used in the present invention is usually 4-1000 nm.

As the precursor which is the most important component in the present invention, a metal precursor having a carbonyl ligand may be used. For example dicobalt hexacarbonyl t-butylacetylene [Co ₂ (CO) ₆ (t-BuC = CH)], dicobalt octacarbonyl (Co ₂ (CO) ₈ ), molybdenum hexacarbonyl (Mo (CO) ₆ ) and nickel tetracarbonyl (Ni (CO) ₄ ) can be used at least one selected from among, dicobalt hexacarbonyl t-butylacetylene [Co ₂ (CO) ₆ (t-BuC = CH)] is preferred. In the present invention, the supply of the precursor is preferably performed for 10 seconds to 30 minutes. If it is less than 10 seconds, the precursor may not be sufficiently supplied to the extent that chemisorption may occur uniformly, and 30 minutes is sufficient, so no further supply is necessary.

The induction gas that can be used in the atomic layer deposition method according to the present invention may be selected from nitrogen, argon, helium, and among these, it is preferable to use inexpensive nitrogen.

Specifically, in the present invention, the surface diffusion inducing step may be performed by supplying the precursor as required amount and then supplying the induction gas to the reactor to maintain the pressure up to 10 to 900 torr for 30 minutes to 2 hours. At this time, the pressure is preferably raised to atmospheric pressure. If the induced gas is less than 10 torr, the desired degree of surface diffusion may not be achieved, and if several hundred torr is sufficient surface diffusion, more pressure may be oversupplied.

In addition, the inert gas may be selected from nitrogen, argon and helium, and the reactive gas may be selected from air, oxygen, water, ozone, hydrogen peroxide and hydrogen.

In the surface diffusion induced atomic layer deposition method according to the present invention, by using a small amount of a precursor in a porous carrier having a high aspect ratio, an atomic layer can be uniformly formed within a very deep pore of the carrier within a short time, and the deposition rate per cycle is self-limiting. It can fundamentally solve the phenomenon of discontinuous values.

1 is a flow chart of a typical atomic layer deposition (ALD) process.
2 shows the atomic layer deposition (ALD) reaction mechanism of ZnO.
3 is a graph showing the self-limiting growth behavior of ALD thin film.
4 is a photograph of a film showing good conformality of an ALD thin film.
5 is a conceptual diagram showing the adsorption characteristics of the precursor according to the surface diffusion.
6 and 7 show the results of ZnO ALD performed on a porous alumina carrier (1 cycle), FIG. 6 shows the change in ZnO content according to DEZ feeding time, FIG. 7 is a cross-sectional photograph (inset photo) of the cylindrical carrier and EDS cross-sectional profile of Zn.
8 is a view showing the results of experiments by DCHCBA. (a) is a cross-sectional photograph of a carrier which has been fed DCHCBA for 5 minutes and proceeded to the adsorption step; (b) is a cross-sectional photograph of a 1 minute cycle of ALD after supplying and adsorbing DCHCBA for 5 minutes and purging, oxidizing and purging; (c) is a cross-sectional photograph of a 10 minute ALD cycle after the DCHCBA is adsorbed by supplying for 10 minutes and then purged, oxidized and purged; (d) a cross-sectional photograph of a 40 minute supply of DCHCBA followed by adsorption followed by a cycle of purge, oxidation, and purge to perform one cycle of ALD; The diameter of the carrier is about 2 mm.
9 is a comparative view showing the surface diffusion before and after the DCHCBA, (a) is a cross-sectional photograph of the carrier that proceeded to the adsorption step by supplying the DCHCBA for 5 minutes; (b) is a cross-sectional photograph after surface diffusion was made after DCHCBA was supplied and adsorbed for 5 minutes.

Hereinafter, the present invention will be described in more detail with reference to the following examples and drawings.

In order to successfully adsorb precursors on carriers with extremely high aspect ratios, it is necessary to elucidate the differences between ordinary flat substrates (wafers) and porous carriers. For example, for a 12-inch wafer, the largest substrate currently used in semiconductor processes, the surface area is about 0.07 m ² . On the other hand, when the specific surface area of the porous carrier is 250 m ² / g, the total surface area of 10 g of the carrier reaches 2500 m ² and its surface area is about 35000 times larger than that of the 12-inch wafer. Therefore, systematic studies have to be made to solve the technical difficulties due to the large surface area of the carrier, the ultrahigh aspect ratio and the very small pore size.

Another technical challenge anticipated with internal diffusion limits is that the porous carriers have a discrete value of deposition rate per cycle due to the inherent self-limiting growth behavior of ALD. Just as the deposition rate on a flat substrate can be expressed as the deposition thickness per cycle, the deposition rate on a porous carrier can be expressed as the metal content (or mass) per cycle, which is usually cycle (depending on the combination of precursor and carrier). 0.5 to 10 percent per sugar.

For example, if the deposition rate of an ALD process on a carrier is 2% per cycle, the metal content that can be achieved when depositing an ALD evenly to the center of the carrier is 2% (1 cycle). ), 4% (2 cycles), 6% (3 cycles), etc., have very large discrete values. If an active metal content of 5% yields the highest catalytic efficiency, this cannot be achieved with the ALD method.

Of course, if the ALD proceeds with insufficient supply of precursors so that self-limiting growth behavior does not appear, the metal content may have an interstitial value (eg, 5%). In this case, however, the metal content is lowered from the surface of the carrier to the inside, and the mean value achieved (eg 5%) is only an average value. In flat plates, the deposition rate per cycle is very small in angstroms, which is not a problem. However, in a carrier, the larger the specific surface area and the larger the number of surface functional groups per unit area, the more serious the problem of discrete deposition rate.

As is well known, surface diffusion is a phenomenon in which atoms, molecules, clusters, etc. adsorbed on a solid surface move along the surface. Precursors in ALD in general plates have very strong chemisorption with surface functional groups (mainly OH groups), and surface diffusion is almost neglected because the cycle time is very short, a few seconds.

When ALD is carried out on a carrier, the deposition rate will be discontinuous if sufficient precursor is supplied to saturate the surface to induce self-limiting deposition behavior. On the other hand, when an insufficient amount of precursor is supplied, as shown in the conceptual diagram (left) of FIG. 5, the adsorption of the precursor is mainly concentrated on the pore mouth side, and the amount of adsorption of the precursor decreases as it enters the pores. Even if the speed is adjusted to the desired value, the content of the deposited metal is lowered as it enters the inside of the carrier. However, if a precursor is able to surface diffuse on the surface of the carrier, the adsorbed precursors will spontaneously diffuse until the concentration becomes uniform even though the amount of precursor supply is not sufficient to occupy all the adsorption sites. It can be distributed evenly over (conceptual right side of FIG. 5). Hereinafter, the process according to the present invention will be referred to as surface-diffusion-induced atomic layer deposition (SDI-ALD).

In the SDI-ALD method according to the present invention, since the precursor can be adsorbed to the center of the carrier even with a short precursor supply time (inadequate supply amount), the problem that the precursor supply time must be excessively long due to the internal diffusion limitation phenomenon is solved. In addition, the phenomenon that the deposition rate has a discontinuous value is also solved because it is no longer necessary to adjust the precursor supply time beyond a certain threshold.

Example  1: alumina carrier  Common from above ALD On by ZnO  deposition

In this embodiment, in order to confirm the importance of the internal diffusion of the precursor, ZnO deposition experiments by a general ALD without surface diffusion on the porous carrier was performed. As a carrier, a cylindrical alumina carrier having structural characteristics as follows was used.

Cylinder average diameter: 2 mm

Cylinder length: 6 mm

Aspect ratio = the actual surface area of one carrier / the contour area of one cylinder: ~ 4.3x10 ⁷

-Average pore diameter: 10 nm

-BET specific surface area: 250 m ² / g

Cylindrical carrier density: 0.703 g / cm ³

Using diethylzinc (DEZ) and water vapor as precursors, DEZ adsorption, purge, water adsorption, and water purge were performed at room temperature. The reason for using DEZ as a precursor is that DEZ is one of the ideal ALD precursors. That is, the vapor pressure is high, and chemisorption with the OH functional group occurs irreversibly very quickly. Water supply time and purge time are shown in Figure 6 the result of performing a cycle given a change in DEZ supply time for DEZ adsorption in a fixed state.

Initially, ZnO content tends to increase because the amount of surface adsorption increases as DEZ feed time increases. However, the increase in ZnO content can be seen to saturate at a feed time of approximately 20 minutes. In ALD on a typical wafer, the deposition thickness no longer increases despite an increase in precursor supply time, because ALD processes were performed with all the adsorption sites present on the wafer surface saturated (self-limiting called growth behavior). If the same analysis is used for the carrier sample, it can be assumed that all the adsorption sites up to the inside of the carrier pore were chemisorbed by DEZ in a supply time of about 20 minutes.

FIG. 6 shows the result of EDS analysis of a cross section of a cylindrical carrier which was subjected to ALD cycle by supplying DEZ for 20 minutes. The picture inserted in the figure shows the cross section of the carrier used for the EDS analysis (as mentioned earlier, the radius is about 0.975 mm). It is expected that similar amounts of Zn are detected at all points from r = 0 to 0.975 mm, but the analysis shows that only about half the carrier radius (penetration depth ~ R / 2) has grown ZnO. .

FIG. 7 is a graph showing surface coverage versus radial distance from the center of the cylinder axis. In other words, the point where r = 0 is occupied by DEZ in all the adsorption sites in the carrier, the surface occupancy becomes 100%, and the point where r = 0.975mm does not have any adsorption at all. The result of the above experiment is about r = 0.45mm, so the surface occupancy is about 75%. Of course, considering the aspect ratio of 43,000,000 and the average diameter of the pore inlet is only 10 nm, it is an excellent deposition result.However, if self-limiting growth occurs on the principle of ALD, it must grow evenly on all surfaces. This is the necessary part.

There is one important assumption for ALD to self-limit growth as described above. In other words, a larger amount of precursor must be supplied than the number of adsorption sites present on the exposed surface. However, in this preliminary experiment, the diffusion of DEZ molecules in the carrier is not easy due to the structural characteristics of the cylindrical carrier.

The results show that internal diffusion limits ALD growth. Therefore, the results of this experiment show that in order to adsorb to the inner center of the carrier by the general ALD method without surface diffusion, the supply time of the precursor must be very long. This, together with the discrete value of deposition rate per cycle, is a real problem for the catalytic application of ALD.

Example  2: alumina carrier  Common from above ALD On by DCHCBA  deposition

Adsorption experiments were carried out using dicobalt hexacarbonyl t-butylacetylene [Co ₂ (CO) ₆ (t-BuCCH, DCHCBA] precursor instead of DEZ on the same cylinder type alumina carrier as used in Example 1 DCHCBA It is a reddish brown liquid and a relatively stable volatile compound in air.

First, 10 g of the cylindrical carrier was placed in an ALD reactor, and then supplied with DCHCBA at room temperature for 5 minutes to adsorb, followed by venting, removing one cylindrical carrier, and then breaking it. (a). As shown in the figure, the depth of the precursor adsorbed due to the intrinsic color of the precursor itself can be visually confirmed. The precursor supply time of 5 minutes may be insufficient supply time due to inadequate adsorption to the center of the precursor cross section. Figure 8 (b) is a state after performing the ALD process of one cycle through the oxidation and purge step after supplying and purging DCHCBA for 5 minutes. The oxidation of adsorbed DCHCBA changed the color from reddish brown to blue, but there was no change in the penetration depth of the metal.

8 (c) and 8 (d) show a state after supplying DCHCBA for 10 minutes and 40 minutes, respectively, and performing one cycle of the ALD process. In order to form an atomic layer by adsorption to the center of the cylinder, even if the supply of DCHCBA for 40 minutes it can be seen that it is still insufficient. In particular, it can be seen that there is no significant difference in precursor penetration depth between the sample supplied with the precursor for 10 minutes and the sample supplied with 40 minutes for the internal diffusion limited growth phenomenon toward the center of the cylinder.

Example  3: alumina carrier  Surface Diffusion Induction from Above ALD On by DCHCBA  deposition

Although the atomic layer can be formed on the porous carrier having an aspect ratio of 43,000,000 by ALD through the above embodiment, it can be seen that a solution for this problem is required because the atomic layer is limited by internal diffusion.

Therefore, in this embodiment, in order to overcome the above problems, the experiment was conducted to induce the surface diffusion of the precursor dicobalt hexacarbonyl t-butylacetylene. The alumina carrier has a chemical structure that is expected to facilitate surface diffusion due to its weak interaction with the OH group.

Specifically, the alumina carrier was placed in the reactor and the vacuum was withdrawn until the pressure was below 70 mTorr. By supplying nitrogen to the DCHCBA canister maintained at room temperature as a transfer gas (100 sccm), DCHCBA was supplied to the reactor for 5 minutes. At this time, the reactor temperature was room temperature and the pressure was several hundred mTorr. The gas in the reactor is then evacuated for 30 minutes to purge the reactor to a pressure of 70 mTorr. After supplying nitrogen so that the pressure was at atmospheric pressure, the reactor was maintained at atmospheric pressure for surface diffusion. The photo of FIG. 9 (b) is a cross-sectional photograph in the state advanced to this step. Then, the reactor is heated at 450 ° C. for 3 hours while supplying air again for oxidation of the cobalt precursor adsorbed thereon. The reactor is then evacuated again to purge the reactor.

9 is a comparative view showing the surface diffusion before and after the DCHCBA, (a) is a cross-sectional photograph of the carrier that proceeded to the adsorption step by supplying the DCHCBA for 5 minutes; (b) is a cross-sectional photograph after surface diffusion was made after DCHCBA was supplied and adsorbed for 5 minutes.

As clearly shown in the figure (photo), the precursor A was supplied for only 5 minutes in both the left and right photographs, but the surface diffused specimens can be seen to evenly adsorb the precursor to the center of the cross section of the cylindrical carrier. In addition, since the concentration of precursor A is thinner after surface diffusion, the color becomes thinner than the surface diffusion.

The experimental result of FIG. 9 is a phenomenon in which the adsorbed precursor A may be desorbed and diffused along the pores in the gas state. However, if the diffusion in the gas state, the weight of the sample should be reduced before and after diffusion. However, when the experiment was performed with 10g of carrier, the weight change was not within the error range of the experiment. Therefore, the present inventors have confirmed that the surface diffusion of the precursor, which was conceptually conceived, may be possible depending on which precursor is selected.

It should also be noted that the precursor supply time adsorbed the precursor to the center of the carrier with a small amount of precursor supply, which is very insufficient for all adsorption sites in the carrier to occupy the self-limiting atomic layer growth. That is, it is possible to solve the phenomenon that the deposition rate per cycle has a discontinuous value due to self-limiting growth.

As shown in the above embodiment, surface diffusion-induced atomic layer deposition (SDI-ALD) is used to allow atomic layer growth even in very deep pores, which are limited by internal diffusion and become increasingly difficult to ALD. It is possible to fundamentally solve the phenomenon that speed has a discontinuous value.

Claims (12)

A method of depositing an atomic layer on a porous carrier by inducing surface diffusion of a precursor,
1) supplying a precursor on the porous carrier to chemisorb;
2) surface diffusion of the precursor by supplying an induction gas to the porous carrier to which the precursor is adsorbed;
3) supplying and purging the inert gas to exhaust unadsorbed precursors, reaction byproducts or induction gases;
4) exhausting the inert gas and supplying a reactant to form an atomic layer by reacting the chemisorbed precursor with the reactant;
5) A surface diffusion induced atomic layer deposition method comprising the step of re-supplying and purging the inert gas. The method of claim 1,
The porous carrier is a surface diffusion induced atomic layer deposition method, characterized in that selected from alumina, silica, zeolite. The method of claim 1,
Aspect ratio of the porous carrier is a surface diffusion induced atomic layer deposition method, characterized in that 1x10 ³ to 10 ⁷ . The method of claim 1,
The pore size of the porous carrier is a surface diffusion induced atomic layer deposition method, characterized in that 4 to 1000 nm. The method of claim 1,
The precursor is a surface diffusion induced atomic layer deposition method, characterized in that the metal precursor having a carbonyl ligand. The method of claim 5,
The metal precursor is dicobalt hexacarbonyl t-butylacetylene (Co ₂ (CO) ₆ ), dicobalt octacarbonyl [Co ₂ (CO) ₆ (t-BuC = CH)], molybdenum hexacarbonyl ( Surface diffusion-induced atomic layer deposition method characterized in that at least one selected from Mo (CO) ₆ ) or nickel tetracarbonyl (Ni (CO) ₄ ). The method of claim 1,
The induction gas is a surface diffusion induced atomic layer deposition method, characterized in that selected from nitrogen, argon, helium. The method of claim 1,
The surface diffusion inducing step is a surface diffusion induced atomic layer deposition method characterized in that the supply of the induction gas is carried out in a manner of maintaining the reactor pressure to 10 ~ 900 torr for 30 minutes to 2 hours. The method of claim 8,
And the reactor pressure is raised to atmospheric pressure. The method of claim 1,
Supplying the precursor is a surface diffusion induced atomic layer deposition method, characterized in that performed for 10 seconds to 30 minutes. The method of claim 1,
The inert gas is a surface diffusion induced atomic layer deposition method, characterized in that selected from nitrogen, argon, helium. The method of claim 1,
The reactor is a surface diffusion induced atomic layer deposition method, characterized in that selected from air, oxygen, water, ozone, hydrogen peroxide, hydrogen.

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