KR20120049234A - 이온 소스들의 이온 조성을 선택적으로 제어하기 위한 시스템 및 방법 - Google Patents

이온 소스들의 이온 조성을 선택적으로 제어하기 위한 시스템 및 방법 Download PDF

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Publication number
KR20120049234A
KR20120049234A KR1020127001557A KR20127001557A KR20120049234A KR 20120049234 A KR20120049234 A KR 20120049234A KR 1020127001557 A KR1020127001557 A KR 1020127001557A KR 20127001557 A KR20127001557 A KR 20127001557A KR 20120049234 A KR20120049234 A KR 20120049234A
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KR
South Korea
Prior art keywords
plasma
pulse
electric field
field pulse
electron
Prior art date
Application number
KR1020127001557A
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English (en)
Korean (ko)
Inventor
카말 하디디
라제쉬 도라이
버나드 지. 린제이
비크람 싱흐
조지 디. 파파솔리오티스
Original Assignee
베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. filed Critical 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크.
Publication of KR20120049234A publication Critical patent/KR20120049234A/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
KR1020127001557A 2009-07-01 2010-06-25 이온 소스들의 이온 조성을 선택적으로 제어하기 위한 시스템 및 방법 KR20120049234A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/496,080 US8664561B2 (en) 2009-07-01 2009-07-01 System and method for selectively controlling ion composition of ion sources
US12/496,080 2009-07-01

Publications (1)

Publication Number Publication Date
KR20120049234A true KR20120049234A (ko) 2012-05-16

Family

ID=42470555

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127001557A KR20120049234A (ko) 2009-07-01 2010-06-25 이온 소스들의 이온 조성을 선택적으로 제어하기 위한 시스템 및 방법

Country Status (6)

Country Link
US (1) US8664561B2 (zh)
JP (1) JP2012532417A (zh)
KR (1) KR20120049234A (zh)
CN (1) CN102471880B (zh)
TW (1) TWI467621B (zh)
WO (1) WO2011002688A1 (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8748785B2 (en) 2007-01-18 2014-06-10 Amastan Llc Microwave plasma apparatus and method for materials processing
US8664561B2 (en) 2009-07-01 2014-03-04 Varian Semiconductor Equipment Associates, Inc. System and method for selectively controlling ion composition of ion sources
US20120000606A1 (en) * 2010-07-02 2012-01-05 Varian Semiconductor Equipment Associates, Inc. Plasma uniformity system and method
US9196489B2 (en) * 2013-01-25 2015-11-24 Varian Semiconductor Equipment Associates, Inc. Ion implantation based emitter profile engineering via process modifications
US9783884B2 (en) * 2013-03-14 2017-10-10 Varian Semiconductor Equipment Associates, Inc. Method for implementing low dose implant in a plasma system
US11120973B2 (en) 2019-05-10 2021-09-14 Applied Materials, Inc. Plasma processing apparatus and techniques
US11189462B1 (en) 2020-07-21 2021-11-30 Tokyo Electron Limited Ion stratification using bias pulses of short duration

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Publication number Priority date Publication date Assignee Title
US6042686A (en) 1995-06-30 2000-03-28 Lam Research Corporation Power segmented electrode
JPH09129621A (ja) * 1995-09-28 1997-05-16 Applied Materials Inc パルス波形バイアス電力
US6253704B1 (en) 1995-10-13 2001-07-03 Mattson Technology, Inc. Apparatus and method for pulsed plasma processing of a semiconductor substrate
CA2205817C (en) * 1996-05-24 2004-04-06 Sekisui Chemical Co., Ltd. Treatment method in glow-discharge plasma and apparatus thereof
JP2920188B1 (ja) * 1998-06-26 1999-07-19 日新電機株式会社 パルスバイアス水素負イオン注入方法及び注入装置
US6335535B1 (en) * 1998-06-26 2002-01-01 Nissin Electric Co., Ltd Method for implanting negative hydrogen ion and implanting apparatus
US6182604B1 (en) 1999-10-27 2001-02-06 Varian Semiconductor Equipment Associates, Inc. Hollow cathode for plasma doping system
JP3586197B2 (ja) 2000-03-23 2004-11-10 シャープ株式会社 薄膜形成用プラズマ成膜装置
JP2001351897A (ja) * 2000-06-05 2001-12-21 New Japan Radio Co Ltd プラズマエッチング装置
EP1162646A3 (en) * 2000-06-06 2004-10-13 Matsushita Electric Works, Ltd. Plasma treatment apparatus and method
US20030101935A1 (en) 2001-12-04 2003-06-05 Walther Steven R. Dose uniformity control for plasma doping systems
JP4048837B2 (ja) * 2002-05-24 2008-02-20 日新イオン機器株式会社 イオン源の運転方法およびイオン源装置
JP4484421B2 (ja) * 2002-06-21 2010-06-16 独立行政法人科学技術振興機構 プラズマ表面処理方法及び装置
US7095179B2 (en) 2004-02-22 2006-08-22 Zond, Inc. Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities
US7878145B2 (en) 2004-06-02 2011-02-01 Varian Semiconductor Equipment Associates, Inc. Monitoring plasma ion implantation systems for fault detection and process control
US7528389B2 (en) 2005-03-15 2009-05-05 Varian Semiconductor Equipment Associates, Inc. Profile adjustment in plasma ion implanter
US7914692B2 (en) 2006-08-29 2011-03-29 Ngk Insulators, Ltd. Methods of generating plasma, of etching an organic material film, of generating minus ions, of oxidation and nitriding
KR100857845B1 (ko) 2007-05-29 2008-09-10 주식회사 다원시스 플라즈마 이온 주입 방법 및 장치
US8664561B2 (en) 2009-07-01 2014-03-04 Varian Semiconductor Equipment Associates, Inc. System and method for selectively controlling ion composition of ion sources

Also Published As

Publication number Publication date
TWI467621B (zh) 2015-01-01
WO2011002688A1 (en) 2011-01-06
US8664561B2 (en) 2014-03-04
CN102471880A (zh) 2012-05-23
US20110000896A1 (en) 2011-01-06
CN102471880B (zh) 2014-03-19
JP2012532417A (ja) 2012-12-13
TW201126562A (en) 2011-08-01

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