KR20120040741A - 방사선 방출 반도체 소자 - Google Patents

방사선 방출 반도체 소자 Download PDF

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Publication number
KR20120040741A
KR20120040741A KR1020127006427A KR20127006427A KR20120040741A KR 20120040741 A KR20120040741 A KR 20120040741A KR 1020127006427 A KR1020127006427 A KR 1020127006427A KR 20127006427 A KR20127006427 A KR 20127006427A KR 20120040741 A KR20120040741 A KR 20120040741A
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KR
South Korea
Prior art keywords
diode chip
semiconductor device
emitting diode
light emitting
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020127006427A
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English (en)
Korean (ko)
Inventor
노르빈 본 마름
랄프 비르트
Original Assignee
오스람 옵토 세미컨덕터스 게엠베하
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of KR20120040741A publication Critical patent/KR20120040741A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

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  • Led Device Packages (AREA)
  • Led Devices (AREA)
KR1020127006427A 2009-08-12 2010-08-05 방사선 방출 반도체 소자 Withdrawn KR20120040741A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009037186A DE102009037186A1 (de) 2009-08-12 2009-08-12 Strahlungsemittierendes Halbleiterbauteil
DE102009037186.9 2009-08-12

Publications (1)

Publication Number Publication Date
KR20120040741A true KR20120040741A (ko) 2012-04-27

Family

ID=43037643

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127006427A Withdrawn KR20120040741A (ko) 2009-08-12 2010-08-05 방사선 방출 반도체 소자

Country Status (7)

Country Link
US (1) US9012926B2 (enExample)
EP (1) EP2465139A1 (enExample)
JP (1) JP2013502062A (enExample)
KR (1) KR20120040741A (enExample)
CN (1) CN102473717A (enExample)
DE (1) DE102009037186A1 (enExample)
WO (1) WO2011018411A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180092284A (ko) * 2017-02-08 2018-08-17 서울반도체 주식회사 발광 다이오드 및 이를 포함하는 발광 모듈
US12382750B2 (en) 2017-02-08 2025-08-05 Seoul Semiconductor Co., Ltd. Light emitting diode and light emitting module comprising the same

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009047788A1 (de) * 2009-09-30 2011-03-31 Osram Opto Semiconductors Gmbh Beleuchtungseinrichtung für eine Kamera sowie Verfahren zum Betrieb derselben
DE102011015821B4 (de) 2011-04-01 2023-04-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
US8492182B2 (en) 2011-04-29 2013-07-23 Osram Opto Semiconductors Gmbh Method for the producing of a light-emitting semiconductor chip, method for the production of a conversion die and light-emitting semiconductor chip
US12002915B2 (en) * 2011-06-24 2024-06-04 Creeled, Inc. Multi-segment monolithic LED chip
US9299742B2 (en) * 2011-08-15 2016-03-29 Micron Technology, Inc. High-voltage solid-state transducers and associated systems and methods
DE102012101393A1 (de) * 2012-02-21 2013-08-22 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil
DE102012202927B4 (de) * 2012-02-27 2021-06-10 Osram Gmbh Lichtquelle mit led-chip und leuchtstoffschicht
DE102012202928A1 (de) * 2012-02-27 2013-08-29 Osram Gmbh Lichtquelle mit led-chip und leuchtstoffschicht
DE102012101892B4 (de) 2012-03-06 2021-05-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Wellenlängenkonversionselement, Licht emittierendes Halbleiterbauelement und Anzeigevorrichtung damit sowie Verfahren zur Herstellung eines Wellenlängenkonversionselements
DE102012102301B4 (de) 2012-03-19 2021-06-17 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip und Scheinwerfer mit einem solchen Halbleiterchip
DE102012112149A1 (de) * 2012-12-12 2014-06-26 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
DE102012112530A1 (de) * 2012-12-18 2014-06-18 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
JP6203147B2 (ja) * 2014-01-29 2017-09-27 シャープ株式会社 発光装置
JP6230631B2 (ja) * 2014-01-29 2017-11-15 シャープ株式会社 発光装置
WO2015141222A1 (ja) * 2014-03-20 2015-09-24 東芝マテリアル株式会社 発光装置およびｌｅｄ電球
TWI568026B (zh) * 2014-11-04 2017-01-21 錼創科技股份有限公司 發光裝置
DE102015103055A1 (de) * 2014-12-04 2016-06-09 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
CN107408615A (zh) * 2015-03-13 2017-11-28 夏普株式会社 发光装置
KR20170135585A (ko) * 2016-05-31 2017-12-08 엘지디스플레이 주식회사 뱅크 절연막을 포함하는 유기 발광 표시 장치
DE102016122237A1 (de) * 2016-11-18 2018-05-24 Osram Opto Semiconductors Gmbh Multipixel-LED-Bauteil und Verfahren zum Betreiben eines Multipixel-LED-Bauteils
DE102016224090B4 (de) * 2016-12-05 2024-03-28 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement, Modul mit mindestens zwei optoelektronischen Bauelementen und Verfahren zum Herstellen eines optoelektronischen Bauelements
DE102017106776A1 (de) 2017-01-30 2018-08-02 Osram Opto Semiconductors Gmbh Halbleiterbauelement mit Halbleiterchip
CN110800117A (zh) * 2017-07-03 2020-02-14 夏普株式会社 光源装置及发光装置
DE102018111021A1 (de) 2017-12-14 2019-06-19 Osram Opto Semiconductors Gmbh Lichtemittierendes halbleiterbauteil und verfahren zur herstellung eines licht emittierenden halbleiterbauteils
US11054112B2 (en) * 2017-12-22 2021-07-06 Lumileds Llc Ceramic phosphor with lateral light barriers
EP3614437B1 (en) * 2018-08-22 2021-05-05 Lumileds LLC Semiconductor die

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW383508B (en) 1996-07-29 2000-03-01 Nichia Kagaku Kogyo Kk Light emitting device and display
JPH10261818A (ja) * 1997-03-19 1998-09-29 Fujitsu Ltd 発光半導体装置
JP2001111109A (ja) * 1999-10-07 2001-04-20 Sharp Corp 窒化ガリウム系化合物半導体発光素子
EP1757170B1 (en) 2004-06-04 2010-06-30 Philips Intellectual Property & Standards GmbH Electroluminescent structure and led with an el structure
WO2007034367A1 (en) * 2005-09-19 2007-03-29 Koninklijke Philips Electronics N.V. Variable color light emitting device and method for controlling the same
JP2007294878A (ja) 2006-03-31 2007-11-08 Fujifilm Corp 半導体層とその成膜方法、半導体発光素子、及び半導体発光装置
JP2007287842A (ja) * 2006-04-14 2007-11-01 Ricoh Co Ltd 半導体装置
US7714348B2 (en) * 2006-10-06 2010-05-11 Ac-Led Lighting, L.L.C. AC/DC light emitting diodes with integrated protection mechanism
DE102007022947B4 (de) 2007-04-26 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
CN101578714B (zh) * 2007-08-03 2011-02-09 松下电器产业株式会社 发光装置
US7968902B2 (en) * 2008-03-31 2011-06-28 Bridgelux, Inc. Light emitting devices with constant forward voltage

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180092284A (ko) * 2017-02-08 2018-08-17 서울반도체 주식회사 발광 다이오드 및 이를 포함하는 발광 모듈
US12382750B2 (en) 2017-02-08 2025-08-05 Seoul Semiconductor Co., Ltd. Light emitting diode and light emitting module comprising the same

Also Published As

Publication number Publication date
JP2013502062A (ja) 2013-01-17
CN102473717A (zh) 2012-05-23
DE102009037186A1 (de) 2011-02-17
EP2465139A1 (de) 2012-06-20
US9012926B2 (en) 2015-04-21
US20120193657A1 (en) 2012-08-02
WO2011018411A1 (de) 2011-02-17

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Date Code Title Description
PA0105 International application

Patent event date: 20120312

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid