KR20120039253A - Real time monitoring system of process chamber - Google Patents

Abstract

PURPOSE: Areal time monitoring system of a processing chamber is provided to accurately detect whether leak due to external air exists within the processing chamber or not by monitoring physical and chemical states of the inner side of the processing chamber in rear time. CONSTITUTION: A processing chamber(100) comprises an optical windows(101). An exhaust line(300) interlinks the processing chamber and a vacuum pump(200). The exhaust line comprises an optical probe(10) and a control module. The control module is connected to the optical probe through optical fiber(400). A light emitting part irradiates the inner side of the exhaust line with a light source having wavelengths of a specific band. A light receiving part is connected to the optical fiber and collects a spectrum of the light source when the light source is reflected in the exhaust line. A signal processor changes the spectrum into an electric signal and outputs the electric signal.

Description

Real time monitoring system of process chamber

The present invention relates to a technique for real-time monitoring of a process chamber for manufacturing a semiconductor substrate by performing a process in a subatmospheric pressure state using or without plasma, and more particularly, plasma light emitted from an optical window of the process chamber. Through spectral treatment of the exhaust gas emitted through the emission line of the emission chamber and the process chamber, the physical and chemical states in the process chamber are monitored in real time to detect abnormality (eg, abnormal discharge of plasma), The present invention relates to a process chamber real-time monitoring system that enables more precise monitoring of leaks from inflow of external air into the chamber.

The manufacturing process of semiconductor device using plasma includes deposition process such as dry etching process, chemical vapor deposition process and sputtering process, and also gas in vacuum without using plasma. There is a process of the method (Thermal Chamber, SACVD) to flow the process (Flow) and so on.

In the semiconductor manufacturing apparatus using plasma, RF power is applied to a coil outside a reaction tube by a capacitively coupled plasma (CCP) method, which generates plasma by applying RF power between opposite parallel plates according to the configuration of electrodes generating plasma. Inductively coupled plasma (ICP) method for generating plasma, magnetically enhanced reactive ion etching (MERIE) method for generating plasma by combining RF power and magnetic field, electron cyclotron resonance (ECR) method for generating plasma by combining microwave and magnetic field Etc.

In other words, the plasma apparatus used in the above process typically includes a process chamber for forming a reaction space, a shower head for supplying a process gas, an electrode on which a substrate is seated, a power supply for supplying power to the shower head, and a vacuum for the process chamber. It is to include a vacuum pump and exhaust line for maintaining.

Accordingly, when a reaction gas is supplied to a process chamber providing a closed space and RF power is applied to electrodes inside the process chamber to form an electric field, the reaction gas is converted into a plasma state while being activated by the electric field, and plasma The ions in the state react with the thin film on the wafer positioned on the electrode so that the thin film on the wafer can be etched into a desired shape.

In this case, in a semiconductor manufacturing apparatus using a plasma or performing a process without a plasma at a quasi-atmospheric pressure, it is necessary to monitor and control the process in real time in order for the process (plasma) to proceed as desired. Alternatively, a large number of reaction byproducts are generated in the etching and CVD processes without using plasma, and the reaction byproducts react with the reaction gas or photoresist used to generate a polymer, and the polymer material is formed on the substrate surface. However, since it is also attached to the inner wall of the process chamber, it causes variation of process parameters and particle generation, which in turn causes defects on the substrate during the semiconductor manufacturing process, resulting in lowered yield.

Therefore, plasma was analyzed by a sensor using an optical emission spectrometer (OES) in order to reduce the defect factor as described above, and the leakage and the abnormality of the chamber were detected from the analysis.

Accordingly, the optical module is attached to the optical window (viewport) of the process chamber to analyze the spectrum of plasma light emission to detect abnormality of the process chamber (e.g., abnormal discharge phenomenon of plasma) and leakage. It is to be done.

However, the prior art as described above, when monitoring the plasma light emission through the optical module in the state that the outside air flows into the process chamber, nitrogen (N2), oxygen (O2), argon (Ar) when there is a leak Since the spectrum is monitored, it is determined whether the outside air flows into the process chamber by determining whether the intensity of the monitored spectrum is increased, but the sensitivity of the leak of the outside air in the process chamber is inferior. When the window (viewport) is coated, the monitoring performance of the optical module is deteriorated.

On the other hand, conventionally by installing an RGA (Residual Gas Analyzer) in the exhaust line leading to the vacuum pump in the process chamber to improve the detection accuracy of the air leak, which is the problem described above, by analyzing the mass of the gas discharged through the exhaust line Techniques for detecting leaks more precisely have been disclosed.

In other words, the air leak detection technology using the RGA ionizes a small amount of exhaust gas discharged through the exhaust line, and then passes the ionized gas through a tunnel through which an electromagnetic field is applied. Collected by the tunneled field, the heavier mass will travel farther through the tunnel, calculating the mass of the ions.

Then, the components of the ions can be detected according to the mass of the ions calculated as described above, and it is possible to monitor whether the outside air is introduced into the process chamber while absolutely measuring the amount of oxygen or nitrogen using the same. will be.

However, in the case of the air leak detection technology using the RGA, a high voltage component such as a filament is required to ionize the exhaust gas passing through the exhaust line, and the high voltage component has a short period of use, which is frequently used. There is a problem that needs to be replaced, and when the parts are replaced as described above, the process must be stopped so that the glass or wafer can not be monitored and leaks are not detected in real time. There is this.

In addition, the air leak detection method using the RGA is limited to the detection of the leak due to the inflow of external air, it is not possible to monitor the presence or absence of abnormality in the process chamber.

Accordingly, the present invention is to improve the conventional problems as described above, by embedding a probe connected to the optical fiber in the exhaust line of the process chamber by spectroscopic treatment of the wavelength of a specific band passing through the exhaust line by absorption spectroscopy By constructing a monitoring system that measures the presence of O2) and nitrogen (N2) in real time, it reduces the economic burden of using components such as filament for gas ionization when using conventional RGA techniques, and in particular by replacing used components. It is an object of the present invention to provide a process chamber real-time monitoring system that can more accurately detect in real time whether there is a leak by external air in the process chamber while preventing the process is stopped.

In addition, the present invention by simultaneously configuring a system for monitoring the plasma light emission emitted from the light window (viewport) of the process chamber and the gas discharged through the exhaust line of the process chamber in real time by absorption spectroscopy, the physical in the process chamber And process chambers that detect abnormality of the process chamber (eg, abnormal discharge of plasma) from real-time monitoring of chemical state, and at the same time, more precisely and simultaneously detect the presence of leaks by outside air in the process chamber. Another purpose is to provide a real-time monitoring system.

The real-time monitoring system of the process chamber of the present invention for achieving the above object comprises an exhaust line for connecting the process chamber and the vacuum pump to maintain the process chamber having the light window in a vacuum or sub-atmospheric pressure or less, the exhaust An optical probe that irradiates a light source into the exhaust line through which exhaust gas flows, collects the spectra of the reflected light source, and converts the spectrum into an electrical signal; The optical probe is connected to a control module located outside the exhaust line through an optical fiber to control its operation, wherein the control module converts an electrical signal from the optical probe into an electrical signal and outputs the spectrum. The signal is input through the optical fiber to analyze whether the leakage occurs due to the inflow of external air into the process chamber through absorption spectroscopy.

In addition, the leak detection by the control module is configured to detect when external air is injected into the process chamber due to leakage and when a spectral signal of oxygen or nitrogen present in the injected external air is present in the reflected light spectrum do.

The optical probe may further include: a light emitting part connected to the optical fiber and irradiating a light source having a wavelength of a specific band in an exhaust line through which exhaust gas flows from a process chamber to a vacuum pump under control of the control module; A light receiving unit connected to the optical fiber and collecting a spectrum of the reflected light source when the light source irradiated from the light emitting unit is reflected in the exhaust line through which the exhaust gas flows; And a signal processor converting the spectrum of the reflected light source collected through the light receiver into an electrical signal and outputting the converted signal to the control module. It includes.

In addition, the optical window of the process chamber is configured to connect the optical module unit for monitoring the plasma light emission according to the process change of the process chamber.

In addition, the control module detects the intensities of the plasma light emission monitored by the optical module unit, calculates an actual peak value deviation ratio with respect to the detected intensities, and the calculated peak value deviation ratio is a preset intensity. The leak detection program is configured to determine in real time whether leakage occurs due to a change in the physical or chemical state of the process chamber in comparison with the reference peak value.

In addition, the optical module unit, the optical probe for monitoring the plasma light in the process chamber through the optical window; A light concentrator for capturing plasma light in the process chamber monitored by the light probe and converting the light into an electrical signal; An optical analysis unit generating a waveform of the optical image from the electrical signal of the plasma light converted from the optical focusing unit; It is configured to include.

As described above, the present invention, while reducing the economic burden of using a component such as filament for gas ionization when using the conventional RGA technique, and prevents the problem that the process is stopped due to the replacement parts, in particular the physical and chemical state in the process chamber By monitoring in real time, the effect of enabling the detection of abnormalities in the process chamber such as abnormal discharge of plasma and / or the presence of leaks by outside air in the process chamber can be more accurately detected in real time.

1 is a block diagram showing a state in which a real-time monitoring system is connected to the exhaust line of the process chamber in one embodiment of the present invention.
Figure 2 is a detailed block diagram of an optical probe in one embodiment of the present invention.
Figure 3 is a schematic block diagram showing a state in which a real-time monitoring system is connected to each of the exhaust line and the light window of the process chamber in another embodiment of the present invention.
Figure 4 is a detailed block diagram of the optical module unit in another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

1 is a block diagram illustrating a state in which a real-time monitoring system is connected to an exhaust line of a process chamber according to an embodiment of the present invention, and FIG. 2 is a detailed block diagram of an optical probe according to an embodiment of the present invention.

In the real-time monitoring system of the process chamber according to an embodiment of the present invention, as shown in FIGS. 1 and 2, the process chamber 100 having the light window (viewport) 101 is placed under a vacuum or subatmospheric pressure. It is configured in the exhaust line 300 to connect the process chamber 100 and the vacuum pump 200 to maintain, and includes an optical probe 10 and the control module 20.

The optical probe 10 is located inside the exhaust line 300. After irradiating a light source into the exhaust line 300, the optical probe 10 collects the spectra of the reflected light source and converts it into an electrical signal to convert the optical fiber 400. It is configured to output to the control module 20 through, and includes a light emitting unit 11, a light receiving unit 12 and a signal processor (13).

The light emitting unit 11 is connected to the optical fiber 400 and is configured to irradiate a light source having a wavelength of a specific band in the exhaust line 300 under the control of the control module 20.

The light receiving unit 12 is connected to the optical fiber 400, and when the light source irradiated from the light emitting unit 11 is reflected in the exhaust line 300 through which the exhaust gas passes, collecting the spectrum of the reflected light source It is configured to.

The signal processor 13 is configured to convert the spectrum of the reflected light source collected through the light receiver 12 into an electrical signal and output the converted signal to the control module 20 through the optical fiber 400.

The control module 20 is connected to the optical probe 10 through the optical fiber 400 to control the light source irradiation of the light emitting unit 11 included in the optical fiber 400, the signal processor 13 Program to analyze whether the leakage caused by the inflow of external air into the process chamber 100 is received through the optical fiber 400 after receiving the spectral signal of the reflected light source converted into an electrical signal through the optical fiber 400. This mount is configured.

That is, the control module 20 is a source of external air is injected into the process chamber 100 due to the occurrence of the leak and the light source reflecting the spectral signals of oxygen (O2) and nitrogen (N2) present in the injected external air If present in the spectrum, it is possible to precisely determine that the leak in the process chamber 100 from the spectral signals of oxygen (O2) and nitrogen (N2) present in the spectrum of the reflected light source.

Here, the control module 20 is to store a reference value for the spectrum of oxygen (O2).

That is, in the monitoring system of the process chamber according to an embodiment of the present invention, as shown in FIGS. 1 and 2, the plasma or plasma-free state is not obtained from the operation of the vacuum pump 200 connected to the exhaust line 300. In the process chamber 100 in which the process proceeds to exhaust the exhaust gas component through the exhaust line (300).

In this case, the light emitting unit 11 of the optical probe 10 located in the exhaust line 300 irradiates a light source having a wavelength of a specific band according to the control signal of the control module 20.

Then, the light source irradiated from the light emitting unit 11 is reflected by the exhaust gas in the exhaust line 300 flowing from the vacuum chamber 100 to the vacuum pump 200, accordingly the light receiving unit configured in the optical probe 10 12 collects the spectra of the reflected light source and outputs the spectrum to the signal processor 13.

Then, the signal group 13 converts the spectra of the reflected light source into an electrical signal and stores the reference values for the spectra of oxygen (O 2) and nitrogen (N 2) included in the air through the optical fiber 400. Bar to be output to the control module 20,

The control module 20 absorbs and speculates whether external air is injected into the process chamber 100 and the spectral signals of oxygen (O 2) and nitrogen (N 2) present in the injected external air are also present in the reflected light spectrum. Analyze and compare the stored reference value, and if the spectral signal of oxygen (O2) and nitrogen (N2) present in the spectra of the reflected light source meet the stored reference value in the process chamber 100 It is possible to determine precisely that a leak has occurred.

On the other hand, Figures 3 and 4 attached to another embodiment of the present invention, another embodiment of the present invention is to compensate for the disadvantages of the real-time monitoring system of the process chamber according to an embodiment of the present invention.

That is, one embodiment of the present invention shown in FIGS. 1 and 2 is limited to real-time detection of leaks by external air in the process chamber 100 from the exhaust gas flowing through the exhaust line 300. Bar, such a monitoring system has a disadvantage in that it is not possible to detect the leak in accordance with the physical and chemical changes of the process chamber 100 in real time, another embodiment of the present invention is to improve this disadvantage.

In more detail, in general, when the process proceeds using plasma, the reaction gas is supplied to a process chamber that provides an enclosed space, and upper and lower electrodes (not shown) and spaced apart at regular intervals are installed inside the process chamber. RF (radio frequency) power is applied to the electrode (not shown) to form an electric field.

Then, the reaction gas is converted into a plasma state while being activated by an electric field, and the ions in the plasma state react with the thin film on the wafer positioned at the lower electrode to etch the thin film on the wafer into a desired shape.

In this case, in the semiconductor manufacturing apparatus using plasma, it is necessary to monitor and control the plasma process in real time according to the process change in order for the plasma process to proceed as desired.

That is, in the plasma etching and plasma CVD process, many reaction by-products are generated, and these react with the reaction gas or photoresist used to generate a polymer, and the polymer material adheres to the substrate surface or the inner wall of the process chamber. As a result, variations in process parameters and generation of particles may occur, thereby causing defects in the substrate during the semiconductor manufacturing process, resulting in lowered yield.

Accordingly, in order to reduce such a defect factor, repeated preventive maintenance (PM) of the process chamber is performed for a predetermined time, and the process chamber is deposited in a process chamber after depositing a certain amount of film quality. In order to remove the polymer (Polymer) that is generated, a cleaning process called dry cleaning similar to the etching process was carried out, and in this cleaning process, the worn-out state of the parts used in the process chamber In order to improve the consumption and mass production of the reaction gas, the etching end point detection using the EPD (End Point Detector) is required.

In addition, the process chamber recognizes a state in which there is no data input within a predetermined time while the process is in progress, that is, a process of a run down process in which the process chamber stops without performing the process for a predetermined time while the process is in progress. Proceed.

In other words, if there is no data input because there is no substrate to process the process, one run is performed every 5 minutes in every chamber, and the process chamber is stopped for 30 minutes or 1 ~ 2 hours despite the normal state of the process chamber. Accordingly, normal process progression is possible when the substrate is reloaded.

In addition, the process chamber goes through a process such as a process change (eg, Recipe change) and product change as necessary, such a process and product change is carried out in one process to another process, according to the process and Naturally, the film quality to be deposited must be changed from the product change, and therefore, the change of the process (recipe) can be made from the change of the film quality to be deposited.

However, while one embodiment of the present invention as shown in FIG. 1 and FIG. 2 has the advantage of detecting real-time leaks due to the injection of external air into the process chamber, the dryness of the process chamber is changed periodically. The state change as described above is not taken into account because the cleaning, run down, process change, change of product and change of product, and change of state after preventive maintenance (PM) of the chamber are not considered at all. The real-time leak detection in the process chamber according to this also has a disadvantage that is not achieved at all.

Therefore, another embodiment of the present invention shown in the accompanying Figures 3 and 4 is to compensate for the disadvantages of the embodiment of the present invention shown in the accompanying Figures 1 and 2.

Hereinafter, the same reference numerals as in the exemplary embodiment of the present invention will be denoted by the same reference numerals and description thereof will be omitted.

Another embodiment of the present invention, as shown in Figures 3 and 4 attached, the process chamber 100 to maintain the process chamber 100 having a light window (viewport) 101 in a vacuum or sub-atmospheric pressure or less state ) And an optical probe 10 in the exhaust line 300 connecting the vacuum pump 200, and the optical module unit 30 in the optical window 101, and then the optical probe 10 and the optical probe 10. The optical module unit 30 is configured to be controlled by the control module 20.

In this case, the optical module unit 30 is monitored by the optical probe unit 31 for monitoring the plasma light in the process chamber 100 through the optical window (viewport) 101 and the optical probe unit 31 A light concentrator 32 for capturing plasma light in the process chamber 100 and converting the light into an electrical signal, and generating a waveform of an optical image from an electrical signal of plasma light converted from the light concentrator 32. The light interpretation part 33 is included.

In addition, the control module 20 determines whether external air is injected into the process chamber 100 and the spectral signals of oxygen (O 2) and nitrogen (N 2) present in the injected external air are also present in the reflected light spectrum. Leak is generated in the process chamber 100 when the spectral signal of oxygen (O 2) and nitrogen (N 2) existing in the reflected light source spectrum matches the stored reference value. A program of an absorption spectrometry method for accurately determining the detection rate, and additionally detect the intensities of the plasma light emission monitored by the optical module unit 30 to calculate an actual peak value deviation ratio with respect to the detected intensities, and The calculated peak value deviation ratio is compared with reference peak values of preset intensities according to changes in physical and chemical states of the process chamber 100. It is equipped with a leak detection program (patent application No. 2009-88613 of the present applicant) which determines in real time whether or not another leak has occurred.

Herein, the process change includes dry cleaning and run down, dry cleaning and running process and product change, preventive maintenance (PM) for dry cleaning and process chamber, run down and running process and product change, run down and process It means any one of preventive maintenance (PM) for the chamber, vacuum process and product change and preventive maintenance (PM) for the process chamber.

The reference peak values of the predetermined intensities change the intensity of the plasma light emission by changing the sampling process of the process chamber 100 to detect an intensity change corresponding to a steady state, and then to the reference peak values of the intensities which are reference. The change in the intensity of the plasma light emission by the normal specification deviation ratio and the change in the sampling process of the process chamber are detected, and the amount of variation in the intensity corresponding to the leak state is detected. It means each.

The normal specification deviation ratio detects the intensities of the plasma light emission corresponding to the steady state by inputting a plurality of sampling substrates while virtually performing dry cleaning, run down, process change and product change, and process change of PM. In the detected intensities, it means that the deviation ratio is calculated by comparing the peak values of the other intensities 1: 1 with one intensity peak value as a reference and then setting them by averaging them.

The leak spec deviation ratio detects the intensities of the plasma light emission corresponding to the leak state by inputting a plurality of sampling substrates while virtually performing dry cleaning, run down, process change and product change, and process change of PM. In the detected intensities, it is meant that the deviation ratio is calculated by comparing the peak values of the other intensities 1: 1 with one intensity reference peak value as a reference, and then averages them.

In this case, the range corresponding to the normal specification deviation ratio is one of the reference values for the intensities of the plasma light emission corresponding to the steady state by inputting a plurality of sampling substrates as the process changes. Compute the deviation ratio by comparing the peak values of the other intensities 1: 1 to the intensity reference peak value of, and then average them. ± 5 based on the average processed peak value and the center eigenvalue (EI) of the peak value. It means that it is set within the range of%.

In addition, the range corresponding to the normal specification deviation ratio is one that is a reference for detecting the intensities of the plasma light emission corresponding to the leak state by inputting a plurality of sampling substrates as the process changes. When the deviation ratio is calculated by comparing the peak values of the other intensities to the intensity reference peak value of 1: 1 and then averaging them, the average peak value is in the range of + 5% and the minimum peak averaged. It means that the value is set within the range of -5%.

In addition, the range corresponding to the leak specification deviation ratio is calculated by averaging the deviation ratio with respect to the peak values of the intensities in the range corresponding to the normal specification deviation ratio, and then averaging them to the center eigenvalue of the peak value and the peak value (EI). It is set within the range of ± 5% on the basis of), and includes all of the range outside the range corresponding to the normal spec deviation ratio is set.

In addition, the range corresponding to the leak specifications deviation ratio is calculated by averaging the deviation ratio with respect to the peak values of the intensities corresponding to the normal specification deviation ratio, and then within the range of + 5% with respect to the maximum peak value averaged. The minimum peak value to be averaged is set within the range of -5% and includes all the ranges outside the range corresponding to the set normal specification deviation ratio.

Thus, another embodiment of the present invention as shown in Figures 3 and 4 attached, when the exhaust gas is discharged to the vacuum pump 200 through the exhaust line 300 from the vacuum chamber 100, the exhaust, Through the optical probe 10 configured in the line 300, the control module 20 detects precisely in real time through absorption spectroscopy that leakage occurs from the inflow of external air into the process chamber 100. Since the embodiment of the present invention and its operation state are the same, overlapping will be omitted.

On the other hand, if RF power is applied after the reaction gas is injected into the process chamber 100, the reaction gas injected into the process chamber 100 is in a plasma state by a high frequency generated by a process RF generator (not shown). It is activated to deposit a thin film on the substrate.

At this time, during the thin film deposition process as described above, the optical module unit 30 connected to the optical window 101 of the process chamber 100 monitors the plasma light emission from the process chamber 100. .

That is, the optical module unit 30 includes a light probe unit 31, a light converging unit 32, and an optical analysis unit 33, and the light probe unit 31 includes plasma light in the process chamber 100. The light concentrator 32 captures the plasma light emission probed through the light probe 31 in the process chamber 100, and converts the light into an electrical signal. To pass).

At this time, the optical analysis unit 33 generates a light image from the plasma light emission converted into an electrical signal from the light converging unit 32, and transmits the image of the generated plasma light emission to the control module 20 To pass.

Then, the control module 20 detects the intensities of the plasma light emission from the image of the plasma light emission generated by the optical analysis unit 13, and calculates an actual peak value deviation ratio with respect to the detected intensities. In addition, the calculated peak value deviation ratio is compared with reference peak values of preset intensities to determine whether leakage occurs due to a change in physical and chemical states of the process chamber 100 in real time.

In more detail, first, a change in plasma light emission is generated from a process change after the process progresses, and the control module 20 detects the intensities of the changed plasma light emission. Here, the wavelength of the plasma light emission according to each process change may exist in the tens to thousands.

Next, the control module 20 calculates the deviation ratio with respect to the peak value by comparing the intensities of the detected plasma light emission, and from the calculation result, each peak value deviation ratio is set to the preset normal specification deviation ratio. Calculate if applicable.

That is, when the intensity of each wavelength is detected from the plasma light emission which is changed after the periodic dry cleaning, the process chamber run down, the change of the process and the product change, and the process chamber preventive maintenance, the detected plasma light emission If the deviation ratio of the peak value with respect to the intensities does not correspond to the preset normal specification deviation ratio, the control module 20 speculates that leakage occurs in the process chamber 100. Will be judged.

On the other hand, when the deviation ratio of the peak value with respect to the intensities of the detected plasma light emission corresponds to a preset normal specification deviation ratio, the control module 20 leaks into the process chamber 100 where the process change is made. Will be judged not to occur.

Here, the above description has been made for one process change, and if one or more process changes occur, it is determined as follows to determine whether or not leakage occurs.

That is, one or more actual process changes may include dry cleaning and run down, or dry cleaning and process and product changes, or preventive maintenance (PM) for dry cleaning and process chambers, or run down and process and product changes, or run Preventive maintenance (PM) for down and process chambers, or vacuum process and product changes and preventive maintenance (PM) for process chambers, or on the other hand dry cleaning and run down and process and product changes, or Preventive maintenance (PM) for dry cleaning, rundown and process chambers, or dry cleaning, process and product changes, and preventive maintenance (PM) for process chambers, or run down, process and product changes and process chambers. It can be any one of preventive maintenance (PM).

Accordingly, when one or more process changes are sequentially performed as described above, the control module 20 sets the actual peak value deviation ratios of the intensities in the intensity of the plasma light emission detected according to each process change, respectively. It is determined that there is no leak when all or none of the spec deviation ratios are met, and it is determined that there is a leak only when the actual leak value deviation ratios do not correspond to the preset normal spec deviation ratios, respectively. .

That is, when the dry cleaning, run down, process change, product change, and process change of PM are all included, or when one or more proceeds, any one of the actual peak value deviation ratios corresponds to the preset normal specification deviation ratio. It is to prevent frequent alarm sound output while determining that there is no leakage.

On the other hand, if the dry peak, run-down, process change, product change and process change of PM or more than one, all of the actual peak value deviation ratios do not correspond to the preset normal specification deviation ratio, It is assumed that a leak has occurred.

In addition, when one or more actual process changes of the process chamber 100 are made, any one of actual peak value deviation ratios of intensities in the intensity of the plasma light emission detected according to each process change is included in the leak specification deviation ratio. If the remaining actual peak value deviation ratios correspond to the normal specification deviation ratio, the control module 20 determines that there is no leak, and any one of the actual peak value deviation ratios corresponds to the leak specification deviation ratio and the rest If the actual peak value deviation ratios do not correspond to the normal specification deviation ratio, the control module 20 determines that there is a leak.

That is, when the dry cleaning, run down, process change, product change, and process change of PM or more than one process are performed, any one of actual peak value deviation ratios corresponds to a preset leak spec deviation ratio. If any one of the remaining actual peak value deviation ratios corresponds to a preset normal specification deviation ratio, it is determined that there is no leakage.

On the other hand, when the dry cleaning, run down, process change, product change and process change of PM or more than one process are performed, any one of the actual peak value deviation ratios corresponds to the preset leak spec deviation ratio, The remaining actual peak value deviation ratios are judged to have no leakage even if they correspond to the preset normal specification deviation ratios.

As described above, in another embodiment of the present invention, when the leakage is detected from the physical and chemical state changes of the process chamber 100, the plasma light emission according to the process change is formed by using a mixed gas having a uniform ratio. Considering that the ratio of the plasma light emission (peak value of intensity) is largely equivalent, the change amount of the plasma light emission changes in the same ratio even when the plasma light emission changes large during the process change.

Accordingly, in another embodiment of the present invention, the air leak detection in the exhaust line 300 and the leak detection according to physical and chemical state changes through the optical window 101 of the process chamber 100 are performed in real time. Since it is made at the same time, it is possible to determine whether the leak occurs in the process chamber 100 more accurately and quickly without error, as well as having a feature capable of fine leak detection.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention as defined by the appended claims. It is to be understood that such changes and modifications are within the scope of the claims.

10; Optical probe 11; Light emitting part
12; Light-receiving unit 13; Signal processor
20; Control module 30; Optical module part
31; Light probe unit 32; Light focusing part
33; Optical analysis unit 100; Process chamber
101; Light window 200; Vacuum pump
300; Exhaust line 400; Optical fiber

Claims (6)

An exhaust line connecting the process chamber and the vacuum pump to maintain the process chamber having the optical window at a vacuum or subatmospheric pressure or less;
An optical probe inside the exhaust line for irradiating a light source into the exhaust line through which the exhaust gas flows, collecting an spectrum of the reflected light source, and converting the converted light into an electrical signal; Constitute
The optical probe is connected to a control module located outside the exhaust line through an optical fiber to control its operation, and the control module converts the spectral signal of the reflected light source into an electrical signal from the optical probe and outputs the optical fiber. A real-time monitoring system of the process chamber, characterized in that configured to analyze through the absorption spectroscopic analysis whether the leakage caused by the inflow of external air received in the process chamber. The method of claim 1, wherein the leak detection by the control module is caused by the leakage caused by the outside air is injected into the process chamber and the spectral signal of oxygen or nitrogen present in the injected outside air is present in the spectrum of the reflected light source Real-time monitoring system of the process chamber, characterized in that configured to detect the case. The method of claim 1, wherein the optical probe,
A light emitting unit connected to the optical fiber and irradiating a light source having a wavelength of a specific band in an exhaust line through which exhaust gas flows from a process chamber to a vacuum pump under control of the control module;
A light receiving unit connected to the optical fiber and collecting a spectrum of the reflected light source when the light source irradiated from the light emitting unit is reflected in the exhaust line through which the exhaust gas flows; And,
A signal processor converting a spectrum of the reflected light source collected through the light receiver into an electrical signal and outputting the converted signal to the control module; Real-time monitoring system of the process chamber, characterized in that comprising a. 2. The real-time monitoring of the process chamber according to claim 1, wherein the optical window of the process chamber is connected to an optical module unit configured to monitor plasma light emission according to a process change of the process chamber and output the same to the control module. system. The method of claim 4, wherein the control module detects intensities of the plasma light emission monitored by the optical module unit, calculates an actual peak value deviation ratio with respect to the detected intensities, and calculates the calculated peak value deviation ratio. A real-time monitoring system of a process chamber, comprising: a leak detection program configured to determine in real time whether leakage occurs due to a change in physical or chemical state of the process chamber in comparison with reference peak values of predetermined intensities. The method of claim 4, wherein the optical module unit,
A light probe unit for monitoring plasma light in the process chamber through the light window;
A light concentrator for capturing plasma light in the process chamber monitored by the light probe and converting the light into an electrical signal; And,
An optical analysis unit generating a waveform of the optical image from the electrical signal of the plasma light converted from the optical focusing unit; Real-time monitoring system of the process chamber, characterized in that comprising a.

Images