KR20120022092A - Light emitting device, method for fabricating the light emitting device, light emitting device package and lighting system - Google Patents

Abstract

The light emitting device according to the embodiment includes a substrate; A first conductivity type semiconductor layer disposed on the substrate; An active layer disposed on the first conductivity type semiconductor layer; And a second conductivity type semiconductor layer disposed on the active layer, wherein the first conductivity type semiconductor layer comprises: a first semiconductor layer; Wherein _{1 In x Al y Ga 1 -x-} y N / GaN (0≤x≤1, 0≤y≤1, 0≤x + y≤1) disposed on the semiconductor layer; And a second semiconductor layer disposed on the In _x Al _y Ga _{1- x- y} N / GaN layer.

Description

LIGHT EMITTING DEVICE, METHOD FOR FABRICATING THE LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM}

The present invention relates to a light emitting device, a light emitting device manufacturing method, a light emitting device package and an illumination system.

Group III-V nitride semiconductors have been spotlighted as core materials of light emitting devices such as light emitting diodes (LEDs) or laser diodes (LDs) due to their physical and chemical properties. The III-V conductive semiconductors are usually made of a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1). .

Light emitting diodes (LEDs) are a type of semiconductor device that transmits and receives signals by converting electricity into infrared rays or light using characteristics of a compound semiconductor.

It is widely used as a light emitting device for obtaining light of a light emitting diode or a laser diode using such a conductive semiconductor material, and has been applied as a light source of various products such as keypad light emitting part of a mobile phone, an electronic board, a lighting device, and the like.

The embodiment provides a light emitting device having a new structure, a method of manufacturing the same, a light emitting device package, and an illumination system.

The embodiment provides a semiconductor light emitting device having improved light extraction efficiency, a method of manufacturing the same, a light emitting device package, and an illumination system.

The light emitting device according to the embodiment includes a substrate; A first conductivity type semiconductor layer disposed on the substrate; An active layer disposed on the first conductivity type semiconductor layer; And a second conductivity type semiconductor layer disposed on the active layer, wherein the first conductivity type semiconductor layer comprises: a first semiconductor layer; Wherein _{1 In x Al y Ga 1 -x-} y N / GaN (0≤x≤1, 0≤y≤1, 0≤x + y≤1) disposed on the semiconductor layer; And a second semiconductor layer disposed on the In _x Al _y Ga _{1- x- y} N / GaN layer.

In one embodiment, a method of manufacturing a light emitting device includes: forming a first semiconductor layer on a substrate; The first layer on a semiconductor _{In x Al y Ga 1 -x- y} N and by repeating the GaN lamination _{In x Al y Ga 1 -x- y} N / GaN layer (0≤x≤1, 0≤y≤1, Forming 0 ≦ x + y ≦ 1); Forming a second conductivity type semiconductor layer on the In _x Al _y Ga _{1 -x- y} N / GaN layer; Forming an active layer on the second semiconductor layer; And forming a second conductivity type semiconductor layer on the active layer.

The light emitting device package according to the embodiment includes a package body; A first electrode layer and a second electrode layer provided on the package body; And a light emitting device electrically connected to the first electrode layer and the second electrode layer, wherein the light emitting device comprises: a substrate; A first conductivity type semiconductor layer disposed on the substrate; An active layer disposed on the first conductivity type semiconductor layer; And a second conductivity type semiconductor layer disposed on the active layer, wherein the first conductivity type semiconductor layer comprises: a first semiconductor layer; Wherein _{1 In x Al y Ga 1 -x-} y N / GaN (0≤x≤1, 0≤y≤1, 0≤x + y≤1) disposed on the semiconductor layer; And a second semiconductor layer disposed on the In _x Al _y Ga _{1- x- y} N / GaN layer.

In an illumination system using a light emitting device as a light source, the illumination system includes a substrate, a package body installed on the substrate, a first electrode layer and a second electrode layer provided on the package body; A light emitting device electrically connected to the first electrode layer and the second electrode layer, the light emitting device comprising: a substrate; A first conductivity type semiconductor layer disposed on the substrate; An active layer disposed on the first conductivity type semiconductor layer; And a second conductivity type semiconductor layer disposed on the active layer, wherein the first conductivity type semiconductor layer comprises: a first semiconductor layer; An In _x Al _y Ga _1-xy N / GaN (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1) layer disposed on the first semiconductor layer; And a second semiconductor layer disposed on the In _x Al _y Ga _{1- x- y} N / GaN layer.

The embodiment can provide a light emitting device having a new structure, a method of manufacturing the same, a light emitting device package, and an illumination system.

The embodiment provides a semiconductor light emitting device having improved light extraction efficiency, a method of manufacturing the same, a light emitting device package, and an illumination system.

1 is a view showing a laminated structure of a light emitting device according to an embodiment
2 and 3 illustrate a method of manufacturing a horizontal light emitting device to which the light emitting device of FIG. 1 is applied.
4 is a view showing a vertical light emitting device to which the light emitting device of FIG. 1 is applied;
5 is a cross-sectional view of a light emitting device package including a light emitting device according to the embodiment;
6 illustrates a backlight unit including a light emitting device package according to an embodiment.
7 is a perspective view of a lighting unit including a light emitting device package according to the embodiment.

In the description of the embodiments, each layer (film), region, pattern or structure layer is formed on or "under" the substrate, each layer (film), region, pad or pattern. In the case where it is described as "to", "on" and "under" include both "directly" or "indirectly" formed. In addition, the criteria for the top or bottom of each layer will be described with reference to the drawings.

In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description. In addition, the size of each component does not necessarily reflect the actual size.

Hereinafter, a light emitting device, a light emitting device manufacturing method, a light emitting device package, and a lighting system according to an embodiment will be described with reference to the accompanying drawings.

1 is a view showing a laminated structure of a light emitting device 100 according to an embodiment of the present invention.

Referring to FIG. 1, the light emitting device 100 according to the embodiment includes a substrate 101, a buffer layer 102 on the substrate 101, an Un-GaN layer 103 on the buffer layer, and the Un-GaN layer. The first semiconductor layer 104 on the 103, the AlGaN / GaN layer 105 on the first semiconductor layer 104, and In _x Al _y Ga _{1 -x−} on the AlGaN / GaN layer 105. _y N / GaN layer 106, the _{in x Al y Ga 1 -x- y} N / GaN layer the second semiconductor layer 107, an active layer on the second semiconductor layer 107 on the (106) (120 ), A second conductivity-type semiconductor layer 130 may be formed on the active layer 120.

For example, the substrate 101 may be formed of at least one of sapphire (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, or Ge, but is not limited thereto.

The buffer layer 102 may be formed on the substrate 101 to mitigate the difference in lattice constant between the semiconductor layer and the substrate 101 that are subsequently grown. The buffer layer 102 is formed of an AlInN structure, an InGaN / GaN superlattice structure, an In _x Ga _{1 - x} N / GaN stacked structure, and Al _x In _y Ga _{1 -x- y} N / In _z Ga _{1 -z} N / GaN. The stacking structure may be selected from a stacking structure of AlInN / GaN.

An Un-GaN layer 103 may be formed on the buffer layer 102, and the Un-GaN layer 103 is grown by injecting trimethyl gallium (TMGa) gas into a chamber together with nitrogen gas, hydrogen gas, and ammonia gas. You can.

A first conductivity type semiconductor layer 110 may be formed between the Un-GaN layer 103 and the active layer 120. The first conductive semiconductor layer 110 is a first semiconductor layer (104), AlGaN / GaN layer (105), In _x Al _y Ga _{1 -x- y} N / GaN layer 106, the second semiconductor layer ( 107).

The first conductive semiconductor layer 110 may be formed of, for example, metal organic chemical vapor deposition (MOCVD), chemical vapor deposition (CVD), or plasma chemical vapor deposition (PECVD). Deposition), Molecular Beam Epitaxy (MBE), Hydride Vapor Phase Epitaxy (HVPE), etc. may be formed using, but is not limited thereto.

A first semiconductor layer 104 including a first conductivity type dopant may be formed on the Un-GaN layer 103. The first semiconductor layer 104 is a first conductive type dopant is doped Ⅲ? A compound semiconductor of group elements Ⅴ formula is _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤ 1, 0 ≦ x + y ≦ 1), and may be selected from, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, or the like. When the first semiconductor layer 104 is an N-type semiconductor layer, the first conductivity type dopant may include an N-type dopant such as Si, Ge, Sn, Se, Te, or the like. The first semiconductor layer 104 may be formed as a single layer or multiple layers, but is not limited thereto.

An AlGaN / GaN layer 105 may be formed on the first semiconductor layer 104 including the first conductivity type dopant. The AlGaN / GaN layer 105 may include a first conductivity type dopant and include at least one of Si, Ge, Sn, Se, or Te as the first conductivity type dopant. For example, in the embodiment, the Si dopant is implanted.

The AlGaN layer in the AlGaN / GaN layer 105 may be formed by the chemical formula of Al _z Ga _{1 - z} N (0 ≦ _z ≦ 1), for example, x may be formed to have a value of 0.1.

The AlGaN / GaN layer 105 may be formed at a temperature of 1000 ° C. to 1200 ° C., for example, in the present embodiment, the AlGaN / GaN layer 105 is formed at a temperature of 1090 ° C.

The AlGaN / GaN layer 105 may include a superlattice structure. For example, in the AlGaN / GaN layer 105, an AlGaN layer and a GaN layer may be stacked, for example, each having a thickness of 2 nm, and formed in a pair, and 20 to 70 pairs may be formed, and in the embodiment, the AlGaN / GaN layer 105 may be formed. It is illustrated that 40-60 pairs of GaN layers were formed.

The AlGaN / GaN layer 105 on top of _{In x Al y Ga 1 -x- y} N / GaN layer (106) (0≤x≤1, 0≤y≤1, 0≤x + y≤1) is to be formed Can be. Said _{In x Al y Ga 1 -x- y} N / GaN layer 106 from which the first can be formed by including a conductive dopant, and a first conductive type dopant, Si, Ge, Sn, Se or Te It may include one.

In the _{In x Al y Ga 1 -x- y} N layer (106) x may have a value in the range of 0.05 to 0.2, y may have a value of 0.0001 to 0.08, and preferably have a value of 0.03 Can be.

Said _{In x Al y Ga 1 -x- y} N / GaN layer 106 may be formed at a temperature of 700 to 800 ℃, for example, in the embodiment, the In _x Al _y Ga _{1 -x- y} N / GaN layer 106 was formed at a temperature of 780 ° C.

It said _{In x Al y Ga 1 -x- y} N / GaN layer 106 may include a super lattice structure (SLS). In other words it is possible to form the _{In x Al y Ga 1-xy} N layer and the GaN layer is _{In x Al y Ga 1 -x- y} N / GaN layer (106) by repeatedly laminating the. When the _{In x Al y Ga 1 -x- y} N layer and the GaN layer are repeatedly stacked in jokhago but may be any layer is laminated first.

It said _{In x Al y Ga 1 -x- y} N layer and preferably can be formed to a thickness of 5 to 50Å, respectively may be formed to a thickness of 10Å. The GaN layer may be formed to a thickness of 15 to 150 15 each, preferably 25 있고 thick. The In _x Al _y Ga _{1- xy} N / GaN layer 106 may be formed to a thickness of 700 to 800 Å.

Said _{In x Al y Ga 1 -x- y} N layer and a GaN layer when the hayeoteul a pair, may form 10 to 50 pairs, embodiment, the _{In x Al y Ga 1 -x- y} N layer and GaN It is illustrated that 15-25 pairs of layers were formed.

The average doping concentration in the In _x Al _y Ga _{1 -x- y} N / GaN layer 106 may be doped up to 9 × 10 ¹⁷ cm ⁻³ to 9 × 10 ¹⁸ cm ⁻³ , but preferably 1 × 10 ^18. It may have a value of cm ⁻³ and the doping concentration may be the same or variable in the In _x Al _y Ga _{1 -x- y} N / GaN layer 106.

In the first semiconductor layer 104, a leakage current may occur due to a difference in lattice constant from the substrate 101, which may lower the reliability of the device. However, In _x Al _y Ga _{1 −} This can be effectively improved by the _{x- y} N / GaN layer 106.

It said _{In x Al y Ga 1 -x- y} N / GaN layer of claim 1, the second semiconductor layer 107 containing a conductive dopant on top (106) may be formed. The second semiconductor layer 107 is a first conductive type dopant is doped Ⅲ? A compound semiconductor of group elements Ⅴ formula is _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤ 1, 0 ≦ x + y ≦ 1), and may be selected from, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, or the like. When the second semiconductor layer 107 is an N-type semiconductor layer, the first conductivity type dopant may include an N-type dopant such as Si, Ge, Sn, Se, Te, or the like. The second semiconductor layer 107 may be formed as a single layer or a multilayer, but is not limited thereto.

An active layer 120 that emits light is formed on the second semiconductor layer 107. The active layer 120 may include any one of a single quantum well structure, a multi quantum well structure (MQW), a quantum dot structure, or a quantum line structure. The active layer 120 may be formed using a compound semiconductor material of a group III-V element in a cycle of a well layer and a barrier layer, for example, an InGaN well layer / GaN barrier layer or an InGaN well layer / AlGaN barrier layer. .

The second conductive semiconductor layer 130 including the second conductive dopant may be formed on the active layer 120. A second conductive semiconductor layer 130 is a second conductive type dopant is doped Ⅲ? A compound semiconductor of group elements Ⅴ formula is _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y ≦ 1, 0 ≦ x + y ≦ 1), and may be selected from, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and the like. When the second conductivity type semiconductor layer 130 is a P type semiconductor layer, the second conductivity type dopant may include a P type dopant such as Mg and Zn.

A light emitting device 100 according to the embodiment is to minimize the phenomenon that the first leakage current in the semiconductor layer caused by the _{In x Al y Ga 1 -x- y} N / GaN layer 106, the crystal property of the active layer In addition, there is an advantage that can improve light output and reliability.

2 and 3 illustrate a method of manufacturing the horizontal light emitting device 100A to which the light emitting device 100 of FIG. 1 is applied.

Referring to FIG. 2, the horizontal light emitting device 100A may form a transparent electrode layer 132 on the light emitting device 100 of FIG. 1. The transparent electrode layer 132 includes ITO, IZO (In-ZnO), GZO (Ga-ZnO), AZO (Al-ZnO), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), IrO _x , RuO at least one of _x , RuO _x / ITO, Ni / IrO _x / Au, and Ni / IrO _x / Au / ITO, but are not limited to these materials.

Meanwhile, a reflective electrode layer may be formed instead of the transparent electrode layer 110, and the reflective electrode layer may include silver (Ag), an alloy containing silver (Ag), aluminum (Al), or aluminum (Al) having high reflectance. It may be formed of at least one of the alloys.

Thereafter, Mesa etching is performed to expose a portion of the first semiconductor layer 104. The etching may be performed using, for example, dry etching such as inductively coupled plasma (ICP) or wet etching using an etchant such as KOH, H ₂ SO ₄ , H ₃ PO ₄ , but is not limited thereto. .

Referring to FIG. 3, a first electrode 115 may be formed on a portion of the first semiconductor layer 104 exposed by the etching, and a second electrode 135 may be formed on the transparent electrode layer 132. The second electrode 135 may be in ohmic contact with the second conductive semiconductor layer 130 by the transparent electrode layer 132.

The first and second electrodes 115 and 135 may be formed of one or more materials or alloys of Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, Au, Hf, Pt, Ru, or Au. It can be formed in a single layer or multiple layers.

The first and second electrodes 115 and 135 provide power to the horizontal light emitting device 100A.

4 is a view showing a vertical light emitting device 100B to which the light emitting device 100 is applied.

1 and 3, the vertical light emitting device 100B forms a conductive support member 175 under the second conductive semiconductor layer 130 of the light emitting device 100 of FIG. (101), the buffer layer 102 and the Un-GaN layer 103 can be removed.

The conductive support member 175 provides power to the vertical light emitting device 100B. The conductive support member 270 may include titanium (Ti), chromium (Cr), nickel (Ni), aluminum (Al), platinum (Pt), gold (Au), tungsten (W), copper (Cu), and molybdenum ( Mo) or at least one of the semiconductor substrate implanted with impurities.

Meanwhile, an adhesive layer (not shown) may be further formed between the conductive support member 175 and the second conductive semiconductor layer 130 to improve the interface bonding force between the two layers. In addition, an ohmic layer (not shown) may be further formed between the second conductive semiconductor layer 150 and the reflective layer 260 for ohmic contact between the two layers.

The substrate 101 may be removed by a laser lift off (LLO) process or may be removed by an etching process, but is not limited thereto.

After the substrate 101 is removed, the buffer layer 102 and the undoped semiconductor layer 103 and a portion of the first semiconductor layer 104 are etched, for example, inductively coupled plasma / reactive (ICP / RIE). Ion Etching), but is not limited thereto.

After the substrate 101 is removed, a first electrode 115 may be formed on any one of the exposed first semiconductor layer 104, buffer layer 102, and undoped semiconductor layer 103. The first electrode 115 together with the conductive support member 175 provides power to the vertical light emitting device 100B.

FIG. 5 is a graph illustrating an operating voltage of a light emitting device to which an InAlGaN / GaN superlattice layer is applied and a reference LED structure according to an embodiment of the present invention at a current of 20 mA. The graph on the left shows the operating voltage of the light emitting device according to the embodiment, and the graph on the right shows the operating voltage of the reference LED structure. As can be seen from the graph, the light emitting device according to the embodiment increases the amount of electrons that can be supplied by the InAlGaN / GaN superlattice layer, so that the operating voltage is relatively low, the electrical characteristics can be improved.

6 is a graph illustrating low current characteristics of a light emitting device and a reference LED structure to which an InAlGaN / GaN superlattice layer is applied according to an exemplary embodiment of the present invention. In both graphs, the red result on the left represents the Vf of the light emitting device according to the embodiment, and the blue result on the right represents the Vf of the reference LED structure. The left graph is the Vf value at 10 μA and the right graph is the Vf value at 1 μA. As shown, it can be seen from both graphs that the low current characteristics of the light emitting device to which the InAlGaN / GaN superlattice layer is applied are excellent.

FIG. 7 is a graph illustrating integrated sphere power measurement results of a light emitting device to which an InAlGaN / GaN superlattice layer is applied and a reference LED structure according to an exemplary embodiment of the present invention. As shown, it can be seen that the light emitting device to which the InAlGaN / GaN superlattice layer is applied has a short wavelength and an improved output power. In this graph, the InAlGaN / GaN superlattice layer is applied to the first conductivity type semiconductor layer 110 but is not limited thereto.

8 is a cross-sectional view of a light emitting device package including a vertical light emitting device according to the embodiment.

Referring to FIG. 8, the light emitting device package according to the embodiment may be installed on the body 20, the first electrode layer 31 and the second electrode layer 32 installed on the body 20, and the body 20. The light emitting device 100 according to the embodiment is electrically connected to the first electrode layer 31 and the second electrode layer 32, and a molding member 40 surrounding the light emitting device 100.

The body 20 may include a silicon material, a synthetic resin material, or a metal material, and an inclined surface may be formed around the light emitting device 100.

The first electrode layer 31 and the second electrode layer 32 are electrically separated from each other, and provide power to the light emitting device 100. In addition, the first electrode layer 31 and the second electrode layer 32 may increase the light efficiency by reflecting the light generated from the light emitting device 100, the outside of the heat generated from the light emitting device 100 May also act as a drain.

The light emitting device 100 may be installed on the body 20 or on the first electrode layer 31 or the second electrode layer 32.

The light emitting device 100 may be electrically connected to the first electrode layer 31 and the second electrode layer 32 by any one of a wire method, a flip chip method, or a die bonding method.

The molding member 40 may surround the light emitting device 100 to protect the light emitting device 100. In addition, the molding member 40 may include a phosphor to change the wavelength of light emitted from the light emitting device 100.

A plurality of light emitting device packages according to the embodiment may be arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, a fluorescent sheet, or the like, which is an optical member, may be disposed on a path of light emitted from the light emitting device package. The light emitting device package, the substrate, and the optical member may function as a backlight unit or as a lighting unit. For example, the lighting system may include a backlight unit, a lighting unit, an indicator device, a lamp, and a street lamp.

9 is a diagram illustrating a backlight unit using a light emitting device package according to an embodiment. However, the backlight unit 1100 of FIG. 9 is an example of a lighting system, but is not limited thereto.

Referring to FIG. 9, the backlight unit 1100 may include a bottom frame 1140, an optical guide member 1120 disposed in the bottom frame 1140, and at least one side or a bottom surface of the optical guide member 1120. It may include a light emitting module 1110 disposed in. In addition, a reflective sheet 1130 may be disposed under the light guide member 1120.

The bottom frame 1140 may be formed by forming a box having an upper surface open to accommodate the light guide member 1120, the light emitting module 1110, and the reflective sheet 1130. Or it may be formed of a resin material but is not limited thereto.

The light emitting module 1110 may include a substrate and a light emitting device package according to a plurality of embodiments mounted on the substrate. The plurality of light emitting device packages may provide light to the light guide member 1120.

As shown, the light emitting module 1110 may be disposed on at least one of the inner surfaces of the bottom frame 1140, thereby providing light toward at least one side of the light guide member 1120. can do.

However, the light emitting module 1110 may be disposed under the bottom frame 1140 to provide light toward the bottom surface of the light guide member 1120, which is according to the design of the backlight unit 1100. Since various modifications are possible, the present invention is not limited thereto.

The light guide member 1120 may be disposed in the bottom frame 1140. The light guide member 1120 may guide the light provided from the light emitting module 1110 to a display panel by surface light source.

The light guide member 1120 may be, for example, a light guide panel (LGP). The light guide plate may be formed of, for example, one of an acrylic resin series such as polymethyl metaacrylate (PMMA), polyethylene terephthlate (PET), polycarbonate (PC), COC, and polyethylene naphthalate (PEN) resin.

The optical sheet 1150 may be disposed above the light guide member 1120.

The optical sheet 1150 may include at least one of, for example, a diffusion sheet, a light collecting sheet, a luminance rising sheet, and a fluorescent sheet. For example, the optical sheet 1150 may be formed by stacking the diffusion sheet, the light collecting sheet, the luminance increasing sheet, and the fluorescent sheet. In this case, the diffusion sheet 1150 may evenly diffuse the light emitted from the light emitting module 1110, and the diffused light may be focused onto a display panel (not shown) by the light collecting sheet. In this case, the light emitted from the light collecting sheet is randomly polarized light, and the luminance increasing sheet may increase the degree of polarization of the light emitted from the light collecting sheet. The light collecting sheet may be, for example, a horizontal or / and vertical prism sheet. In addition, the luminance increase sheet may be, for example, a roughness enhancement film. In addition, the fluorescent sheet may be a translucent plate or film containing a phosphor.

The reflective sheet 1130 may be disposed under the light guide member 1120. The reflective sheet 1130 may reflect light emitted through the bottom surface of the light guide member 1120 toward the exit surface of the light guide member 1120.

The reflective sheet 1130 may be formed of a resin material having good reflectance, for example, PET, PC, PVC resin, etc., but is not limited thereto.

10 is a perspective view of a lighting unit using a light emitting device package according to embodiments. However, the lighting unit 1200 of FIG. 10 is an example of a lighting system, but is not limited thereto.

Referring to FIG. 10, the lighting unit 1200 is installed in the case body 1210, the light emitting module 1230 installed in the case body 1210, and the case body 1210, and provides power from an external power source. It may include a receiving connection terminal 1220.

The case body 1210 is preferably formed of a material having good heat dissipation characteristics, for example, may be formed of a metal material or a resin material.

The light emitting module 1230 may include a substrate 300 and a light emitting device package 200 according to at least one embodiment mounted on the substrate 300.

The substrate 300 may have a circuit pattern printed on an insulator, and for example, a general printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB, and the like. It may include.

In addition, the substrate 300 may be formed of a material that reflects light efficiently, or the surface may be formed of a color that reflects light efficiently, for example, white, silver, or the like.

The light emitting device package 200 according to the at least one embodiment may be mounted on the substrate 300. Each of the light emitting device packages 200 may include at least one light emitting diode (LED). The light emitting diodes may include colored light emitting diodes emitting red, green, blue, or white colored light, and UV light emitting diodes emitting ultraviolet (UV) light.

The light emitting module 1230 may be arranged to have a combination of various light emitting diodes in order to obtain color and brightness. For example, a white light emitting diode, a red light emitting diode, and a green light emitting diode may be combined to secure high color rendering (CRI). In addition, a fluorescent sheet may be further disposed on a path of the light emitted from the light emitting module 1230, and the fluorescent sheet changes the wavelength of light emitted from the light emitting module 1230. For example, when the light emitted from the light emitting module 1230 has a blue wavelength band, the fluorescent sheet may include a yellow phosphor, and the light emitted from the light emitting module 1230 finally passes white light through the fluorescent sheet. Will be shown.

The connection terminal 1220 may be electrically connected to the light emitting module 1230 to supply power. According to FIG. 10, the connection terminal 1220 is inserted into and coupled to an external power source in a socket manner, but is not limited thereto. For example, the connection terminal 1220 may be formed in a pin shape and inserted into an external power source, or may be connected to the external power source by a wire.

In the lighting system as described above, at least one of a light guide member, a diffusion sheet, a light collecting sheet, a luminance rising sheet, and a fluorescent sheet may be disposed on a propagation path of light emitted from the light emitting module to obtain a desired optical effect.

As described above, the lighting system according to the embodiments may be improved reliability by including the light emitting device package according to the embodiments.

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

In addition, the above description has been made with reference to the embodiment, which is merely an example, and is not intended to limit the present invention. Those skilled in the art to which the present invention pertains will be illustrated as above without departing from the essential characteristics of the present embodiment. It will be appreciated that various modifications and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

Claims (10)

Board;
A first conductivity type semiconductor layer disposed on the substrate;
An active layer disposed on the first conductivity type semiconductor layer; And
A second conductivity type semiconductor layer disposed on the active layer,
The first conductivity type semiconductor layer,
A first semiconductor layer; The first semiconductor layer _{In x Al y Ga 1 -x- y} N / GaN layer (0≤x≤1, 0≤y≤1, 0≤x + y≤1 ) that is placed on top; And a second semiconductor layer disposed on the In _x Al _y Ga _{1 -x- y} N / GaN layer. The method of claim 1,
The second conductive semiconductor layer is a light emitting device doped with a p-type dopant. The method of claim 1,
A light emitting element range of the In _x Al _y Ga _{1 -x- y} In x N layer is in the range of 0.05 to 0.2, y is from 0.0001 to 0.08. The method of claim 1,
It said _{In x Al y Ga 1 -x- y} N / GaN layer is _{In x Al y Ga 1 -x- y} N layer and a GaN layer are repeatedly stacked in a 10 to 50-pair light-emitting element formed of a super lattice layer. The method of claim 4, wherein
_Wherein each of the In _x Al _y Ga _{1- x- y} N layers has a thickness of 5 to 50 GPa and the GaN layers are each 15 to 150 GPa thick. The method of claim 1,
It said _{In x Al y Ga 1 -x- y} N / GaN layer of the light emitting element 700 to a thickness of 800Å. The method of claim 1,
The first conductive type semiconductor layer of the first semiconductor layer and said _{In x Al y Ga 1 -x- y} N / GaN layer between the Al _z Ga _{1 - z} N more / GaN layer (0≤z≤1) Light emitting device comprising. Forming a first semiconductor layer over the substrate;
In _x Al _y Ga _{1 -x- y} N and GaN are repeatedly stacked on the first semiconductor layer to form an In _x Al _y Ga _{1 -xy} N / GaN layer (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ forming x + y ≦ 1);
Forming a second conductivity type semiconductor layer on the In _x Al _y Ga _{1 -x- y} N / GaN layer;
Forming an active layer on the second semiconductor layer; And,
A method of manufacturing a light emitting device comprising forming a second conductivity type semiconductor layer on the active layer. The method of claim 8,
Forming Un-GaN between the substrate and the first semiconductor layer; And,
Manufacturing a light emitting device including forming a _z N / GaN layer (0≤z≤1) _- the first semiconductor layer and an _{In x Al y Ga 1 -x- y} N / GaN layer between the Al _z Ga ₁ Way. Package body;
A first conductive layer and a second conductive layer provided on the package body; And
A light emitting device package comprising the light emitting device according to any one of claims 1 to 7 electrically connected to the first conductive layer and the second conductive layer.

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