KR20120016510A - Magnetron sputtering deposition apparatus and magnetron sputtering deposition system - Google Patents
Magnetron sputtering deposition apparatus and magnetron sputtering deposition system Download PDFInfo
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- KR20120016510A KR20120016510A KR1020100078943A KR20100078943A KR20120016510A KR 20120016510 A KR20120016510 A KR 20120016510A KR 1020100078943 A KR1020100078943 A KR 1020100078943A KR 20100078943 A KR20100078943 A KR 20100078943A KR 20120016510 A KR20120016510 A KR 20120016510A
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- ion
- magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/46—Sputtering by ion beam produced by an external ion source
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
The present invention relates to a magnetron sputtering apparatus and a magnetron sputtering system, and more particularly to a magnetron sputtering apparatus and system having a sputter gun and an ion gun.
Sputtering is the process of bombarding particles with high energy to the surface of a material (target material) and causing the material to escape / eject from the surface of the material by exerting momentum exchange. Sputtering is a mechanical reaction, not a chemical or thermal reaction, so any material can be used as the target material. In addition, when glow discharge is performed by using an object to be processed, such as a substrate, as the anode during sputtering, oxides and impurities on the surface of the substrate can be removed by sputtering, and the surface of the substrate is activated, so that the adhesion of the deposition layer is excellent. .
Magnetron sputtering is one of ion sputtering. Magnetron sputtering is a method in which a magnetron is installed on the back surface of a cathode of a plate diode to increase ionization of a target material so that electrons stay in an electric field and a magnetic field around the target material and continue ionization. With magnetron, sputtering is concentrated and causes ionization, which greatly increases the deposition rate of the substrate. In addition, magnetron sputtering is advantageous for large scale deposition and can also grow thin films on the substrate at relatively low temperatures.
In deposition using magnetron sputtering, a method of applying an ion beam to a sputtered target material is conventionally known. By applying an ion beam to the sputtered target material as described above, kinetic energy may be transferred to the target material to increase the growth of the thin film.
By the way, in the conventional magnetron sputtering deposition apparatus, only one ion gun which emits an ion beam was provided, and the position and orientation were also fixed. Therefore, it was difficult to precisely control the growth process of the thin film. In particular, the inventors of the present application have found that the emission of the ion beam plays a big role in the crystallinity and crystallographic direction of the thin film growing on the substrate, but with the conventional magnetron sputtering deposition apparatus, the crystallinity and the crystallographic direction of the thin film to a desired level I couldn't control it.
The present invention is to solve the above problems of the prior art, an object of the present invention to provide a magnetron sputtering deposition apparatus and a magnetron sputtering deposition system capable of precisely controlling the crystallinity and crystallization direction of the thin film.
According to a first aspect of the present invention for achieving the above object, a chamber for receiving a substrate; A sputter gun that releases a target material toward the substrate; And an ion gun that emits an ion beam toward a movement path of the target material, wherein the magnetron sputtering deposition apparatus is provided with a plurality of ion guns. In order to control crystallinity and crystallographic direction, there is provided a magnetron sputtering deposition apparatus, characterized in that the intensity of the ion beam emitted from the ion gun, the position of the ion gun, or the orientation of the ion gun is adjustable.
In addition, according to a second aspect of the present invention for achieving the above object, in a magnetron sputtering deposition system, at least two ion guns that emit ion beams that emit kinetic energy from the sputter gun to the target material directed to the substrate The magnetron sputtering deposition system is provided, characterized in that the crystallinity and crystallization direction of the target material deposited on the substrate by the two or more ion guns are controlled.
According to the magnetron sputtering deposition apparatus and the magnetron sputtering deposition system according to the present invention, it is possible to precisely control the crystallinity and crystal orientation of the thin film. In addition, according to the magnetron sputtering deposition apparatus and the magnetron sputtering deposition system according to the present invention, large-scale deposition is possible even at a relatively low temperature.
1 is a side cross-sectional view schematically showing a magnetron sputtering deposition apparatus according to an embodiment of the present invention.
FIG. 2 is a detailed cross-sectional view illustrating a sputter gun of the magnetron sputtering deposition apparatus of FIG. 1.
3 is a detailed cross-sectional view illustrating an ion gun of the magnetron sputtering deposition apparatus of FIG. 1.
4 to 7 are perspective views schematically showing a magnetron sputtering deposition apparatus according to another embodiment of the present invention.
Hereinafter, with reference to the accompanying drawings will be described the present invention. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention. In the drawings, parts irrelevant to the description are omitted in order to clearly describe the present invention, and like reference numerals designate like parts throughout the specification.
Throughout the specification, when a part is "connected" to another part, it includes not only "directly connected" but also "indirectly connected" with another member in between. . In addition, when a part is said to "include" a certain component, this means that it may further include other components, without excluding the other components unless otherwise stated.
Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
1 is a side cross-sectional view schematically showing a magnetron sputtering deposition apparatus according to an embodiment of the present invention, Figure 2 is a detailed cross-sectional view showing a sputter gun of the magnetron sputtering deposition apparatus of Figure 1, Figure 3 is a magnetron sputtering deposition apparatus of FIG. Detailed cross-sectional view showing the ion gun of.
As shown, the magnetron sputtering deposition apparatus 1 is provided with a
The
The sputter gun 20 (22) releases the target material toward the substrate (S).
The configuration of the
The
The
A power source (not shown) may be connected to the
In general, the target (T) material consists of any suitable material that can be sputtered from the target and deposited on the substrate when an energy source is applied. The target (T) material may include one or more of metals, alloys, metal oxides, metal nitrides, metal sulfides, and metal phosphides, but is not limited thereto. For example, the target material may be Al, Cu, Au, Ag, W, Ta, Ga, Sn, Ba, Be, Ca, Ce, Cs, Hf, La, Mg, Nd, Sc, Sr, Y, Mn, V, Si , Zr, Ti, Mn, Fe, Co, Ni, Y, B, C, La, Pr, Nd, Sm, Gd, Dy, Ho, Er, Pt, Pb, Yb, Pd, Rh, and combinations thereof It may be a metal or alloy selected from the group consisting of, the oxide of the metal, the nitride of the metal, the sulfide of the metal, the nitride of the metal. 2 shows Cu as an example of the target T. In FIG. The target material is discharged from the
On the other hand, the configuration of the
In more detail with reference to FIG. 3, the
The
The ion beam is formed of a gaseous material capable of transferring energy to a target material, and may be, for example, any one of H 2 , He, N 2 , O 2 , Ne, Ar, Kr, Xe, and Rn. However, it is not limited to this example. 3 shows Ar + as an example of an ion beam.
The ion beam emitted from the
Important factors that may affect the flow of the ion beam are the intensity of the ion beam, the position of the
In the present invention, "adjusting the position of the ion gun" means that the position where the ion gun 30 (32) is disposed in the
In the magnetron sputtering deposition apparatus 1 according to the present invention, a plurality of
As mentioned above, although an example of the magnetron sputtering deposition apparatus 1 by one Example of this invention was described, this invention is not limited to this.
For example, as shown in FIG. 4, three
Meanwhile, as shown in FIG. 5, three
In addition, as shown in FIG. 6, two
In addition, as shown in FIG. 7, two
As described above in various embodiments, the number, location, and orientation of the ion gun may be appropriately selected to control the crystallinity or crystal orientation of the target material to be grown on the substrate.
The foregoing description of the present invention is intended for illustration, and it will be understood by those skilled in the art that the present invention may be easily modified in other specific forms without changing the technical spirit or essential features of the present invention. will be. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive. For example, each component described as a single type may be implemented in a distributed manner, and similarly, components described as distributed may be implemented in a combined form.
The scope of the present invention is represented by the following claims, and it should be construed that all changes or modifications derived from the meaning and scope of the claims and their equivalents are included in the scope of the present invention.
Claims (8)
A sputter gun that releases a target material toward the substrate; And
A magnetron sputtering deposition apparatus comprising an ion gun for emitting an ion beam toward a movement path of the target material,
The ion gun is provided in plurality,
In order to control the crystallinity and the crystal direction of the target material deposited on the substrate, the intensity of the ion beam emitted from the ion gun, the position of the ion gun, or the orientation of the ion gun is adjustable Magnetron Sputtering Deposition Apparatus.
The sputter gun, the magnetron sputtering deposition apparatus comprising a permanent magnet and an electromagnetic coil (electromagnetic coil) disposed on both sides of the permanent magnet.
The ion gun is provided with two, the two ion gun is a magnetron sputtering deposition apparatus, characterized in that disposed on the top wall and one side wall of the chamber, respectively.
Two ion guns are provided, and the two ion guns are disposed on the upper wall of the chamber.
Three ion guns are provided, and the three ion guns are disposed on the top wall and the two side walls of the chamber, respectively.
And the target material comprises at least one of metals, alloys, metal oxides, metal nitrides, metal sulfides, and metal phosphides.
And the ion beam is made of a gaseous material.
Priority Applications (1)
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KR1020100078943A KR101243273B1 (en) | 2010-08-16 | 2010-08-16 | Magnetron sputtering deposition apparatus and magnetron sputtering deposition system |
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KR1020100078943A KR101243273B1 (en) | 2010-08-16 | 2010-08-16 | Magnetron sputtering deposition apparatus and magnetron sputtering deposition system |
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KR20120016510A true KR20120016510A (en) | 2012-02-24 |
KR101243273B1 KR101243273B1 (en) | 2013-03-13 |
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KR1020100078943A KR101243273B1 (en) | 2010-08-16 | 2010-08-16 | Magnetron sputtering deposition apparatus and magnetron sputtering deposition system |
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Family Cites Families (3)
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JP3856878B2 (en) * | 1996-10-15 | 2006-12-13 | 株式会社フジクラ | Method for producing polycrystalline thin film |
US6254747B1 (en) * | 1996-12-25 | 2001-07-03 | Nihon Shinku Gijutsu Kabushiki Kaisha | Magnetron sputtering source enclosed by a mirror-finished metallic cover |
KR100258056B1 (en) * | 1997-12-11 | 2000-06-01 | 김희용 | The method for making tin oxide film of gas sensor by sn target with ion beam sputtering |
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