KR20110132163A - Light emitting diode - Google Patents

Light emitting diode Download PDF

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Publication number
KR20110132163A
KR20110132163A KR1020100052021A KR20100052021A KR20110132163A KR 20110132163 A KR20110132163 A KR 20110132163A KR 1020100052021 A KR1020100052021 A KR 1020100052021A KR 20100052021 A KR20100052021 A KR 20100052021A KR 20110132163 A KR20110132163 A KR 20110132163A
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KR
South Korea
Prior art keywords
type semiconductor
semiconductor layer
light emitting
substrate
layer
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KR1020100052021A
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Korean (ko)
Inventor
고형덕
성한규
정훈재
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삼성엘이디 주식회사
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Priority to KR1020100052021A priority Critical patent/KR20110132163A/en
Publication of KR20110132163A publication Critical patent/KR20110132163A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes

Abstract

The present invention relates to a semiconductor light emitting device, wherein the semiconductor light emitting device is formed on a substrate having first and second main surfaces facing each other, a first main surface of the substrate, and a first n-type semiconductor layer and a first p-type semiconductor. A first light emitting structure including a layer and a first active layer formed therebetween, and a second n-type semiconductor layer, a nanorod formed on the second n-type semiconductor layer, and the nanorod formed on a second main surface of the substrate. And a second light emitting structure including a second active layer formed to cover top and side surfaces, and a second p-type semiconductor layer formed to cover top and side surfaces of the second active layer.
In addition, a semiconductor light emitting device according to still another embodiment of the present invention is formed on a substrate having first and second main surfaces facing each other, a first main surface of the substrate, and a first n-type semiconductor layer and a first p-type. A first light emitting structure including a semiconductor layer and a first active layer formed therebetween is formed on a second main surface of the substrate, and is formed on a second n-type semiconductor layer and the second n-type semiconductor layer to form a nanorod shape. And a second light emitting structure including a second active layer having a core light emitting layer, and a second p-type semiconductor layer formed to cover upper and side surfaces of the second active layer.

Description

Semiconductor Light Emitting Diodes

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device, and more particularly, to a semiconductor light emitting device capable of improving light output and external light extraction efficiency and enabling white light emission without a phosphor.

Light Emitting Diode (LED) refers to a semiconductor device capable of realizing various colors of light based on recombination of electrons and holes at junctions of p-type and n-type semiconductors when current is applied. The demand continues to increase because of its many advantages including long life, low power, good initial drive characteristics and high vibration resistance. In addition, the LED has been widely used as a variety of display devices and light sources mainly in the form of a package because of the advantages of excellent monochromatic peak wavelength, excellent light efficiency, and miniaturization. In particular, as the field of application of semiconductor light emitting devices has recently been extended to displays, vehicles, headlamps, and lightings, further improved optical characteristics are required.

In addition, the LED widely used as a backlight of the lighting device or display device is required to emit white light, the implementation of such a white light emitting device is a simple combination of blue, red and green LEDs made of individual LEDs and the method using a phosphor This is widely known. The method of combining individual LEDs of multiple colors on the same printed circuit board requires a complicated driving circuit for this, and accordingly has a disadvantage in that miniaturization thereof is difficult, and thus, a method of manufacturing a white light emitting device using phosphors is generally used.

As a conventional white light emitting device manufacturing method using a phosphor, there is a method using a blue light emitting device and a method using an ultraviolet light emitting device. For example, when a blue light emitting element is used, blue light is converted into white light using a YAG phosphor. That is, the blue wavelength generated from the blue LED may excite the YAG (Yittrium Aluminum Garnet) phosphor to finally emit white light.

Conventional white light emitting device has the advantage that the current control required in the form of combining each LED corresponding to RGB, but the disadvantage of the device characteristics due to the phosphor powder is generated, or the light efficiency is reduced when the phosphor is excited There is a limit that the color correction index is lowered and excellent color is not obtained.

An object of the present invention is to provide a semiconductor light emitting device with improved light output.

Still another object of the present invention is to provide a phosphor-free white light emitting device including a plurality of light emitting parts emitting different wavelength light.

One aspect of the invention,

A first light emission comprising a substrate having first and second main surfaces facing each other, a first n-type semiconductor layer and a first p-type semiconductor layer formed therebetween, and a first active layer formed therebetween A structure, a second n-type semiconductor layer formed on the second main surface of the substrate, a nanorod formed on the second n-type semiconductor layer, a second active layer formed to cover the top and side surfaces of the nanorod, and the second active layer Provided is a semiconductor light emitting device including a second light emitting structure including a second p-type semiconductor layer formed to cover an upper surface and a side surface thereof.

In one embodiment of the present invention, the substrate is a conductive substrate, the conductive substrate, the first n-type semiconductor layer and the second n-type semiconductor layer may be made of the same material.

In one embodiment of the present invention, the conductive substrate, the first n-type semiconductor layer and the second n-type semiconductor layer may be made of GaN or ZnO.

In one embodiment of the present invention, an n-type electrode may be formed on an exposed surface of the first n-type semiconductor layer.

In this case, the n-type electrode may be used as a common electrode of the first and second light emitting structures.

In one embodiment of the present invention, the substrate may be formed of an insulating substrate.

In this case, the n-type electrode is formed through the second n-type semiconductor layer and the insulating substrate in contact with the interior of the first n-type semiconductor layer, the n-type electrode of the first and second light emitting structure Can be used as a common electrode.

In an embodiment, the first p-type electrode may be formed on a portion of the exposed surface of the first p-type semiconductor layer.

In example embodiments, the second p-type electrode may be formed on a portion of the exposed surface of the second p-type semiconductor layer.

In one embodiment of the present invention, the nanorods may be formed of a second n-type semiconductor layer.

In one embodiment of the present invention, the second p-type semiconductor layer may be formed in a range not in contact with the second n-type semiconductor layer.

In one embodiment of the present invention, it may include a transparent electrode formed to cover the top and side surfaces of the second p-type semiconductor layer.

In an embodiment of the present invention, the semiconductor device may further include a dielectric layer formed on the second n-type semiconductor layer and having a through hole in which the nanorods are located.

In this case, the dielectric layer may be made of silicon oxide or silicon nitride.

In one embodiment of the present invention, it may include an insulator to fill the gap between the nanorods.

In one embodiment of the present invention, a plurality of nanorods may be provided.

Another aspect of the invention,

A first light emission comprising a substrate having first and second main surfaces facing each other, a first n-type semiconductor layer and a first p-type semiconductor layer formed therebetween, and a first active layer formed therebetween A second active layer formed on the structure and the second main surface of the substrate, the second active layer including a second n-type semiconductor layer, a core light emitting layer formed on the second n-type semiconductor layer, and having a nanorod shape, an upper surface of the second active layer, and A semiconductor light emitting device including a second light emitting structure including a second p-type semiconductor layer formed to cover a side surface thereof is provided.

As described above, according to the present invention, a semiconductor light emitting device capable of emitting white light without a phosphor may be provided by including a plurality of light emitting parts emitting different wavelength light in one chip. In addition, the light output is improved compared to the LED structure using a conventional phosphor, it is possible to obtain a light emitting device that can implement a variety of colors as well as white by controlling the current injection.

1 is a perspective view showing a semiconductor light emitting device according to an embodiment of the present invention.
FIG. 2 is a schematic cross-sectional view taken along line AA ′ of FIG. 1.
3 is a schematic cross-sectional view of a semiconductor light emitting device according to still another embodiment of the present invention.
4 is a schematic cross-sectional view of a semiconductor light emitting device according to still another embodiment of the present invention.
5 is a cross-sectional view schematically illustrating a package mounting form of the semiconductor light emitting device of FIG. 1.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

However, embodiments of the present invention may be modified in various other forms, and the scope of the present invention is not limited to the embodiments described below. In addition, the embodiments of the present invention are provided to more completely explain the present invention to those skilled in the art. Accordingly, the shape and size of elements in the drawings may be exaggerated for clarity, and the elements denoted by the same reference numerals in the drawings are the same elements.

1 is a perspective view illustrating a semiconductor light emitting device according to an exemplary embodiment of the present invention, and FIG. 2 is a schematic cross-sectional view taken along line AA ′ of FIG. 1. Referring to FIG. 2, the semiconductor light emitting device 100 according to the present embodiment may include a first n-type semiconductor layer 121 and a first p-type semiconductor layer 123 formed thereon on a substrate 110. The first light emitting structure 120 includes an active layer 122 and a second light emitting structure 130 formed on the first light emitting structure 120. The second light emitting structure 130 may include a nanorod 131 ′ and a nanorod 131 ′ formed in a vertical direction on the second n-type semiconductor layer 131 and the second n-type semiconductor layer 131. The second active layer 132 is formed to cover top and side surfaces, and the second p-type semiconductor layer 133 is formed to cover top and side surfaces of the second active layer 132.

In the present embodiment, the first and second n-type semiconductor layers 121 and 131 and the first and second p-type semiconductor layers 123 and 133 may be formed of a nitride semiconductor. Therefore, the present invention is not limited thereto, but in the present embodiment, the first and second n-type semiconductor layers 121 and 131 and the first and second p-type semiconductor layers 123 and 133 may be Al x In y Ga ( 1-xy) has an N composition formula (where 0 = x = 1, 0 = y = 1, 0 = x + y = 1), for example, a material such as GaN, AlGaN, InGaN, and the like. Si, Ge, Se, Te, etc. may be used as the n-type impurity, and Mg, Zn, Be, etc. may be used as the p-type impurity. In the case of n-type and p-type semiconductor layers, they may be grown by MOCVD, MBE, HVPE processes, and the like known in the art.

Meanwhile, the first and second semiconductor layers 121, 123, 131, and 133 and the first and second active layers 122 and 132 may be formed of a semiconductor material other than a nitride semiconductor, for example, Al x In y Ga (1-xy) P (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1) material, and devices obtained with such a material are more suitable for emitting red light.

First and second active layers formed between the first n-type semiconductor layer 121 and the first p-type semiconductor layer 123 and between the second n-type semiconductor layer 131 and the second p-type semiconductor layer 133. 122 and 132 emit light having a predetermined energy by recombination of electrons and holes, and the first and second active layers 122 and 132 may be layers made of a single material such as InGaN as in the present embodiment. However, in contrast, the quantum barrier layer and the quantum well layer may have a multi-quantum well (MQW) structure alternately arranged, for example, each may be formed of GaN and InGaN.

In the present embodiment, the second active layer 132 formed between the second n-type and p-type semiconductor layers 131 and 133 of the second light emitting structure 130 has a predetermined energy by light emission recombination of electrons and holes. It emits light, and may be made of a material such as In x Ga 1 - x N (0 ≦ x ≦ 1) to adjust the band gap energy according to the indium content. In addition, it is possible to implement a variety of colors by adjusting the size of the diameter of the nanorod. In particular, in the present embodiment, the first active layer 122 in the first light emitting structure 120 emits blue light, and the second active layer 132 is yellow by adjusting the diameter of the nanorods of the second light emitting structure 130. By emitting light, a semiconductor light emitting device emitting white light without a phosphor can be manufactured.

In addition, the second p-type semiconductor layer 133 is formed to cover the surface of the second active layer 132, so that the contact area of the second active layer 132 and the second p-type semiconductor layer 133, that is, the current injection The area can be increased. 2, the diameters of the nanorods are shown to be the same as each other, but if necessary, at least one of the plurality of nanorods may be formed to have a different diameter from the other.

As in the present embodiment, as the second active layer 132 is implemented in a nano rod shape, propagation of threading dislocations can be blocked, whereby crystallinity of the active layer 132 can be improved. In addition, as the crystallinity of the active layer 132 is improved, light emission recombination efficiency of electrons and holes may be increased, thereby improving light emission efficiency.

Meanwhile, the second active layer 132 may be made of a single material such as InGaN. Alternatively, the second active layer 132 may have a multi-quantum well (MQW) structure in which quantum barrier layers and quantum well layers are alternately disposed. Each may be made of GaN and InGaN. The quantum barrier layer and the quantum well layer may be alternately formed to form the rod-shaped second active layer 132 and cover the surface thereof.

The substrate 111 may be a conductive substrate, and may be made of a material including any one of Au, Ni, Al, Cu, W, Si, Se, GaAs, for example, a material doped with Al on a Si substrate. . In this case, depending on the selected material, the conductive substrate 111 may be formed by a method such as plating or bonding bonding. In the present embodiment, the conductive substrate 111 is electrically connected to the first and second n-type semiconductor layers 121 and 131, and thus, the first and second n-type semiconductors are formed through the conductive substrate 111. An electrical signal may be applied to the layers 121 and 131.

In the present embodiment, the conductive substrate 111 may be made of GaN, and may be used as a substrate for semiconductor growth. The conductive substrate 111 itself may function as the first and second n-type nitride semiconductor layers 121 and 131 by doping the conductive growth substrate 111 with n-type impurities. That is, in FIG. 2, the first n-type semiconductor layer 121, the second n-type semiconductor layer 131, and the conductive substrate 111 may all be made of GaN substrates doped with n-type impurities. In this case, the n-type semiconductor layers of the first and second light emitting structures 120 and 130 are composed of one semiconductor layer, which makes the manufacturing process and the electrode structure simpler.

In addition, when the GaN substrate 111 itself functions as the first and second n-type semiconductor layers 121 and 131 without using a sapphire substrate and using a GaN substrate, a GaN-based nitride semiconductor layer is formed. The first and second light emitting structures 120 and 130 may significantly reduce defect densities in the active layers 122 and 132, and greatly improve characteristics in areas with high driving currents, thereby greatly improving light output. In addition, since GaN is about 5 times higher than the sapphire substrate in terms of thermal conductivity and excellent in conductivity, it is possible to prevent the efficiency deterioration when the driving current is increased. By using the light, the light from the active layer is hardly reflected at the GaN substrate and the light emitting layer interface. Therefore, light extraction efficiency may be 1.5 times or more higher than when using a sapphire substrate.

However, in the present embodiment, the growth conductive substrate 111 is not limited to GaN, and uses zinc oxide doped with n-type impurities to function as a growth substrate and, as with a GaN substrate, It may function as the first and second n-type semiconductor layers 121 and 131.

Referring back to FIG. 2, the nanorods 131 ′ of the second light emitting structure 130 may extend from the second n-type semiconductor layer 131 and be formed of the same material. In this case, since the first n-type semiconductor layer 121, the second n-type semiconductor layer 131, and the substrate 111 may be formed of the same material, the nanorod 131 ′ may be formed from the substrate 111. It can be seen that it is formed extending.

The second p-type semiconductor layer 133 is formed in a range not in contact with the second n-type semiconductor layer 131. In order to prevent the second n-type semiconductor layer 131 and the second p-type semiconductor layer 133 from contacting each other, the second n-type semiconductor layer 131 is formed on the nanorod 131. It may further include a dielectric layer 151 having a through hole in which ') is located. In consideration of such a function, the dielectric layer 151 may be any material as long as it has an electrical insulating property, but it is preferable to absorb light to a minimum, and thus, for example, SiO 2 , SiO x N y , Si x N y, or the like. Silicon oxide, silicon nitride may be used. In addition, the second n-type semiconductor layer 131 and the dielectric layer 151 may be formed using a suitable deposition process, for example, a MOCVD process.

In the present embodiment, the first n-type semiconductor layer 121 in the second light emitting structure 130, the first p-type semiconductor layer 123, the first active layer 122 of the first light emitting structure 120. An n-type electrode 111a may be formed on one surface of the first n-type semiconductor layer 121 where part of the first n-type semiconductor layer 121 is removed. However, as in the present embodiment, when the first n-type nitride semiconductor layer 121, the substrate 111, and the second n-type semiconductor layer 131 are formed of the same material, the second light emitting structure 130 may be formed. A portion of the n-type electrode 111a may be formed on the exposed second n-type semiconductor layer 131. In this case, the n-type electrode 111a may be used as a common electrode of the first and second light emitting structures 120 and 130.

In addition, a first p-type electrode 123a may be formed on the first p-type semiconductor layer 123 of the first light emitting structure 120, and the nanorod 131 ′ of the second light emitting structure 130 may be formed. The second p-type electrode 133a may be formed on a portion of the exposed surface of the second p-type semiconductor layer 133 formed surrounding the top and side surfaces of the second p-type semiconductor layer 133. The second p-type semiconductor layer 133 may be formed to cover the upper surface and the side surface of the second active layer 132. When the plurality of nanorods 131 'are formed, each of the nanorods 131' is electrically In order to be connected to each other, the second p-type semiconductor layer 133 may be formed to extend from each other from the surface of each nanorod 131 ′. Accordingly, by forming the second p-type electrode 133a on a part of the exposed surface of the second p-type semiconductor layer 133, the entire second p-type semiconductor layer 133 including the plurality of nanorods may be formed. Current application and control is possible.

Unlike the embodiment illustrated in FIG. 2, a reflective metal layer (not shown) may be interposed between the first p-type electrode 123a and the first light emitting structure 120. The reflective metal layer may perform a function of reflecting light emitted from the first active layer 122 toward the upper portion of the first light emitting structure 120, that is, toward the first n-type semiconductor layer 123. It is preferable to form an ohmic contact with the n-type semiconductor layer 121. In consideration of this function, the reflective metal layer may include a material such as Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, or the like.

In this case, the reflective metal layer may have a structure of two or more layers to improve reflection efficiency. As a specific example, Ni / Ag, Zn / Ag, Ni / Al, Zn / Al, Pd / Ag, Pd / Al, Ir / Ag. Ir / Au, Pt / Ag, Pt / Al, Ni / Ag / Pt, etc. are mentioned. However, the reflective metal layer is not necessarily required in this embodiment.

The first p-type electrode 123a and the second p-type electrode 133a may be connected to the same external terminal. However, the present invention is not limited to the above-described embodiments, and various colors can be realized by controlling current injection into the nanorods and the thin film by using a variable resistor during packaging, so that various colors can be realized by connecting to different external terminals. You can make this possible.

In the present embodiment, by providing a plurality of light emitting regions 122 and 132 in one semiconductor light emitting device, not only the light output is improved, but also the nanorod core cell structure is used to maximize the internal quantum efficiency and the light extraction efficiency. You can. In addition, by controlling the diameter of the nanorods to enable yellow light emission, blue light is emitted from the first active layer 122 of the first light emitting structure 120, and the second active layer 132 of the second light emitting structure 130 is provided. By emitting yellow light, a semiconductor light emitting device capable of emitting white light without a phosphor may be provided. However, the present invention is not limited to the white light emitting semiconductor light emitting device, and since various colors can be realized by adjusting the diameter of the nanorods, a combination of colors emitted from the first and second light emitting structures 120 and 130 may be used. The desired color can be implemented.

In addition, a transparent electrode layer (not shown) may be formed to cover the top and side surfaces of the second p-type semiconductor layer 133. The transparent electrode layer performs an ohmic contact and a light transmitting function on the p-side, and may be used as a common electrode for the plurality of second p-type semiconductor layers 133. In this case, the transparent electrode layer is formed to cover the top and side surfaces of each of the nanorods, so as to electrically connect the second p-type semiconductor layer 133 formed on the plurality of nanorods, the plurality of nanorods It may be formed extending from each other from the rod. In this case, since the transparent electrode layer enables electrical connection between the respective nanorods, the second p-type semiconductor layer 133 formed to cover the top and side surfaces of the second active layer 132 may be formed between the nanorods. It can be formed in an electrically separated form. Therefore, the second p-type electrode 133a is formed only on a part of the exposed surface of the transparent electrode layer formed on the second p-type semiconductor layer 133 to apply current to the second light emitting structure 130 as a whole. In consideration of such a function, the transparent electrode layer may be formed using a transparent conductive oxide (TCO).

3 is a schematic cross-sectional view of a semiconductor light emitting device according to still another embodiment. Unlike FIG. 2, the first and second n-type semiconductor layers 221 and 231 and the substrate 211 may be separated from each other. The substrate 211 is a substrate for growing a semiconductor, and an insulating substrate may be used. In this case, the electrode forming process may be more complicated than the embodiment of FIG. 2, but the process of removing the semiconductor growth substrate 211 is omitted, and thus, the light emitting structure forming process is easier.

The growth substrate 211 is sapphire, SiC, MgAl 2 O 4 , MgO, LiAlO 2 , LiGaO 2 , GaN or the like. In this case, the sapphire is a Hexa-Rhombo R3c symmetric crystal and the lattice constants of c-axis and a-direction are 13.001 13. and 4.758Å, respectively, C (0001) plane, A (1120) plane, R 1102 surface and the like. In this case, the C plane is mainly used as a nitride growth substrate because the C surface is relatively easy to grow and stable at high temperatures. In order to mitigate lattice defects of the nitride semiconductor layer formed on the growth substrate 211 and the upper surface of the growth substrate 211, a buffer layer (not shown) may be formed on the upper surface of the growth substrate 211. The buffer layer may be employed as an undoped semiconductor layer made of nitride, or the like, to mitigate lattice defects of the light emitting structure grown thereon.

A first light emitting structure including a first n-type semiconductor layer 221 and a first p-type semiconductor layer 223 and a first active layer 222 formed therebetween on a first main surface of the growth substrate 211 ( 220 is formed, and a second n-type semiconductor layer 231, a nanorod 231 ′ formed on the second n-type semiconductor layer, an upper surface of the nanorod, and a second main surface of the growth substrate 211. A second light emitting structure 230 including a second active layer 232 formed to cover a side surface, an upper surface of the second active layer 232, and a second p-type semiconductor layer 233 formed to cover a side surface is formed.

Hereinafter, the description of the same configuration as the embodiment shown in FIG. 2 will be omitted, and only the changed configuration will be described. In the present embodiment, since the insulating substrate may be used as the growth substrate 221, the first and second light emitting structures 220 and 230 are electrically separated. Therefore, separate first and second n-type electrodes are required, and a second n-type electrode is formed on the exposed second n-type semiconductor layer 231 by removing a portion of the second light emitting structure, and A portion of the light emitting structure 230 and the first light emitting structure 220 may be removed to form a first n-type electrode on the exposed first n-type semiconductor layer 221. However, according to the present exemplary embodiment, the n-type electrode in the form of a conductive via to penetrate the second n-type semiconductor layer 231 and the growth substrate 221 to be connected to the first n-type semiconductor layer 221. 211a). In this case, the n-type electrode 211a may be used as a common electrode of the first and second light emitting structures 220 and 230.

4 is a schematic cross-sectional view of a semiconductor light emitting device according to still another embodiment of the present invention. Unlike the embodiment illustrated in FIG. 3, nanorods formed on the first n-type semiconductor layer 331 extend from the first n-type semiconductor layer 331 to be the same as the first n-type semiconductor layer 331. It is not composed of a material but is composed of a second active layer 332 having a core emitting layer.

By implementing the second active layer 332 in the shape of a nano rod as in the present embodiment, the light emitting area may be further increased, and in addition, the ratio of non-emitting recombination may be reduced to improve the light emitting efficiency. Here, as shown in FIG. 3, the second active layer 332 has a nanorod shape, and the second n-type and p-type semiconductor layers 231 and 233 and the second active layer 232 are formed as one. It can be contrasted with the structure formed by the nanorod structure. As shown in the present embodiment, when only the second active layer 332 is implemented in a nanorod shape, the area of the second active layer 332 may be increased to increase the emission area, and since the ratio of the area exposed to the side surface is low, The fall of luminous efficiency by light emission recombination can be eliminated. In addition, the second p-type semiconductor layer 333 is formed to cover the surface of the nanorod active layer 332, so that the contact area of the second active layer 332 and the second p-type semiconductor layer 333, that is, the current injection The area can be increased. In this case, unlike the embodiment illustrated in FIG. 4, the first n-type semiconductor layer 321, the substrate 311, and the second n-type semiconductor layer 331 may be formed of the same material to form a single layer. have.

5 is a cross-sectional view schematically illustrating a package mounting form of the semiconductor light emitting device of FIG. 1. Referring to FIG. 5, the light emitting device package according to the present embodiment includes first and second terminal parts 301 and 302, and the semiconductor light emitting device is electrically connected to each other. In this case, the semiconductor light emitting device has the same structure as that of FIG. 1, and the first and second n-type semiconductor layers and the conductive substrates 121, 111, and 131 are made of a conductive wire connected to the n-type electrode 111a. The first and second p-type semiconductor layers 123 and 133 may be connected to the second terminal portion 302, and the first and second p-type semiconductor layers 123 and 133 may be connected to the first terminal portion 301 by the first and second p-type electrodes 123a and 133a. have.

The present invention is not limited by the above-described embodiment and the accompanying drawings, but is intended to be limited by the appended claims. Accordingly, various forms of substitution, modification, and alteration may be made by those skilled in the art without departing from the technical spirit of the present invention described in the claims, which are also within the scope of the present invention. something to do.

100, 200, 300: semiconductor light emitting element 111: growth conductive substrate
211 and 311: growth insulating substrates 120, 220 and 320: first light emitting structure
121, 221, and 321: first n-type semiconductor layers 122, 222, and 322: first active layer
123, 223, 323: first p-type semiconductor layer 111a, 211a, 311a: n-type electrode
123a, 223a and 323a: first p-type electrode 133a, 233a and 333a: second p-type electrode
130, 230, and 330: second light emitting structures 131, 231, and 331: second n-type semiconductor layer
131 ', 231': nanorods 132, 232, 332: second active layer
133, 233, and 333: second p-type semiconductor layers 151, 251 and 351: dielectric layers
152, 252, 352: insulators 301, 302: first and second terminal portions

Claims (18)

A substrate having first and second major surfaces facing each other;
A first light emitting structure formed on the first main surface of the substrate and including a first n-type semiconductor layer and a first p-type semiconductor layer and a first active layer formed therebetween; And
A second n-type semiconductor layer formed on the second main surface of the substrate, a nanorod formed on the second n-type semiconductor layer, a second active layer and a second p-type semiconductor layer formed to cover the top and side surfaces of the nanorod; A second light emitting structure comprising a;
Semiconductor light emitting device comprising a.
The method of claim 1,
The substrate is a semiconductor light emitting device, characterized in that the conductive substrate.
The semiconductor light emitting device of claim 2, wherein the conductive substrate, the first n-type semiconductor layer, and the second n-type semiconductor layer are made of the same material.
The method of claim 3,
The conductive substrate, the first n-type semiconductor layer and the second n-type semiconductor layer is a semiconductor light emitting device, characterized in that made of GaN or ZnO.
The method of claim 3,
The n-type electrode is formed on the exposed one surface of the first n-type semiconductor layer.
The method of claim 5,
And the n-type electrode is used as a common electrode of the first and second light emitting structures.
The method of claim 1,
The substrate is a semiconductor light emitting device, characterized in that the insulating substrate.
The method of claim 7, wherein
An n-type electrode formed through the second n-type semiconductor layer and the insulating substrate to be in contact with the inside of the first n-type semiconductor layer, wherein the n-type electrode is a common electrode of the first and second light emitting structures. A semiconductor light emitting element, characterized in that used.
The method of claim 1,
And forming a first p-type electrode on a portion of the exposed surface of the first p-type semiconductor layer.
The method of claim 1,
And forming a second p-type electrode on a portion of the exposed surface of the second p-type semiconductor layer.
The method of claim 1,
The nanorod is a semiconductor light emitting device, characterized in that consisting of a second n-type semiconductor layer.
The method of claim 1,
And the second p-type semiconductor layer is formed in a range not in contact with the second n-type semiconductor layer.
The method of claim 1,
And a transparent electrode formed to cover the top and side surfaces of the second p-type semiconductor layer.
The method of claim 1,
And a dielectric layer formed on the second n-type semiconductor layer and having a through hole in which the nanorods are located.
The method of claim 14,
The dielectric layer is a semiconductor light emitting device, characterized in that made of silicon oxide or silicon nitride.
The method of claim 1,
And an insulator to fill the gap between the nanorods.
The method of claim 1,
A semiconductor light emitting device, characterized in that provided with a plurality of nanorods.
A substrate having first and second major surfaces facing each other;
A first light emitting structure formed on the first main surface of the substrate and including a first n-type semiconductor layer and a first p-type semiconductor layer and a first active layer formed therebetween; And
A second active layer formed on a second main surface of the substrate and including a second n-type semiconductor layer, a core light emitting layer formed on the second n-type semiconductor layer and having a nanorod shape, and an upper surface and a side surface of the second active layer; A second light emitting structure comprising a second p-type semiconductor layer formed to cover;
Semiconductor light emitting device comprising a.
KR1020100052021A 2010-06-01 2010-06-01 Light emitting diode KR20110132163A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160007987A (en) * 2014-07-10 2016-01-21 삼성전자주식회사 Nano-sturucture semiconductor light emitting device
KR20160021921A (en) * 2014-08-18 2016-02-29 삼성전자주식회사 Nano sturucture semiconductor light emitting device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160007987A (en) * 2014-07-10 2016-01-21 삼성전자주식회사 Nano-sturucture semiconductor light emitting device
KR20160021921A (en) * 2014-08-18 2016-02-29 삼성전자주식회사 Nano sturucture semiconductor light emitting device
US9601665B2 (en) 2014-08-18 2017-03-21 Samsung Electronics Co., Ltd. Nanostructure semiconductor light emitting device

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