KR20110117512A - Manufacturing method of transflective type liquid crystal display device - Google Patents

Abstract

The present invention relates to a reflective transparent liquid crystal display device having a protective layer made of an organic insulating material, and more particularly, to a method of manufacturing a reflective transparent liquid crystal display device capable of preventing a defect of the protective layer.
A feature of the present invention is that after forming the first protective layer made of an organic insulating material, the second and third protective layers made of an inorganic insulating material are further formed on the first protective layer.
Therefore, the residue of the first protective layer generated in the process of patterning the first protective layer is removed in the process of patterning the second and third protective layers, thereby preventing the residue defect caused by the residue of the first protective layer. Can be.
Therefore, a poor contact between the drain electrode and the pixel electrode can be prevented, and cracks or breaks of the pixel electrode can be prevented from occurring.

Description

Manufacturing method of transflective type liquid crystal display device

The present invention relates to a reflective transparent liquid crystal display device having a protective layer made of an organic insulating material, and more particularly, to a method of manufacturing a reflective transparent liquid crystal display device capable of preventing a defect of the protective layer.

A liquid crystal display device displays an image using the optical anisotropy and polarization property of the liquid crystal. Since the liquid crystal has a thin and long molecular structure, the liquid crystal has directivity in the arrangement of molecules, and the direction of the molecular arrangement can be controlled by artificially applying an electric field to the liquid crystal.

Therefore, if the molecular arrangement direction of the liquid crystal is arbitrarily adjusted, the molecular arrangement of the liquid crystal is changed, and the polarization state of light is changed in the molecular arrangement direction of the liquid crystal due to optical anisotropy, thereby displaying an image.

Accordingly, a liquid crystal display device includes a liquid crystal panel in which a pair of first and second substrates having a transparent field generating electrode formed on a surface facing each other with a liquid crystal layer interposed therebetween, and a backlight for supplying light thereto. backlight), by controlling the electric field between the two field generating electrodes of the liquid crystal panel to artificially adjust the direction of the liquid crystal molecules to generate a difference in transmittance and to pass the light generated from the backlight through such a liquid crystal panel difference in the transmittance Is displayed to the outside to display various images.

The liquid crystal display is divided into a transmission type and a reflection type. Since the liquid crystal display uses an artificial light source such as a backlight, a bright image may be realized even in a dark external environment, but power is supplied to the backlight. Therefore, when used as a display device of a portable device, a relatively large power consumption is disadvantageous.

Accordingly, in order to compensate for such drawbacks, a reflective liquid crystal display device using an external light source without using a backlight has been proposed.

The reflection type liquid crystal display device has an advantage of low power consumption because it does not have a separate light source, but has a disadvantage that it can not be used in the absence of external light.

Therefore, recently, a reflective type liquid crystal display device having only the advantages of the reflective liquid crystal display device and the transmissive liquid crystal display device has been proposed.

1 is a cross-sectional view showing a part of a display area of a liquid crystal panel in a general reflective transmissive liquid crystal display device.

As shown in the drawing, in the reflecting portion RA in the pixel region P where the gate wiring (not shown) and the data wiring (not shown) cross each other, the gate electrode 11 is formed on the array substrate 1. And a thin film transistor Tr including the gate insulating film 13, the semiconductor layer 15, and the source and drain electrodes 17 and 19.

The protective layer 21 is formed of an organic insulating material on the thin film transistor Tr.

At this time, the protective layer 21 has a concave-convex structure whose surface is convex, and the protective layer 21 includes a drain contact hole 19a exposing a part of the drain electrode 19.

A reflective plate 23 having irregularities and reflective characteristics is formed on the surface of the protective layer 21, and the drain electrode 19 is disposed on the reflective plate 23 through the drain contact hole 19a. The pixel electrode 25 in contact with the film is formed.

In the transmissive section TA, a gate insulating film 13 is formed on the array substrate 1, and the pixel electrode 25 extends from the reflecting section RA.

At this time, in the transmissive part TA, the protective layer 21 is removed to form a step more precisely the thickness of the protective layer 21 and the reflecting plate 23, which is as precise as the thickness of the reflective part RA and the protective layer 21. Doing.

On the inner surface of the color filter substrate 3 facing and corresponding to the array substrate 1 having such a configuration, R (red), G (green), and B (blue) ) A color filter (29) and a black matrix (31) covering each other and covering non-display elements such as gate wiring (not shown), data wiring (not shown), and thin film transistor (Tr) It is provided.

The common electrode 33 is entirely formed on the color filter layer 29 and the black matrix 31.

The liquid crystal layer 20 is provided between the array substrate 1 and the color filter substrate 3 having such a configuration, and the first and second polarizing plates are provided outside the liquid crystal panel 10 although not shown in the drawing. A backlight having a plurality of optical sheets, a plurality of lamps, and a reflecting sheet is provided below the array substrate 1, thereby forming a reflective transmissive liquid crystal display device.

On the other hand, the protective layer 21 is made of a photo acryl-based resin or BCB (benzo cyclobutene) organic material having good planarization characteristics.

Here, the protective layer 21 forms a drain contact hole 19a exposing the drain electrode 19 through dry etching and at the same time, the protective layer 21 is removed from the transmission part TA. The layer 21 remains unpatterned without being cleanly patterned, resulting in poor residues such as deterioration of contact characteristics between the drain electrode 19 and the pixel electrode 27.

 The present invention has been made to solve the above-mentioned conventional problems, and a first object of the present invention is to prevent a defect due to the residue of a protective layer made of an organic insulating material.

For this reason, the second object is to prevent the contact characteristics of the drain electrode and the pixel electrode from deteriorating.

According to an exemplary embodiment of the present invention, a liquid crystal display includes: forming a thin film transistor on a gate line, a data line, and an intersection of the two lines on a first substrate on which a pixel area having a transmissive part and a reflecting part is defined; Forming a first protective layer using an organic insulating material on an entire surface of the first substrate on which the thin film transistor is formed; Patterning the first protective layer to form a first contact hole exposing a portion of the thin film transistor and simultaneously removing the thin film transistor from the transmission portion; Forming a second protective layer as an inorganic insulating material on an entire surface of the first substrate including the first protective layer; Patterning the second passivation layer to form a second contact hole exposing a portion of the thin film transistor and removing the same from the transmission portion; Forming a third protective layer as an inorganic insulating material on an entire surface of the first substrate including the second protective layer; Patterning the third passivation layer to form a third contact hole exposing a portion of the thin film transistor and to remove it from the transmission portion; Forming a reflector on the third passivation layer; Forming a pixel electrode on the reflective part including the reflective plate and the transmission part to contact a portion of the thin film transistor through the first to third contact holes, wherein the second and third protective layers are formed. In the process of patterning, there is provided a method of manufacturing a reflective transmissive liquid crystal display device to remove the residue of the first protective layer.

In this case, the forming of the first passivation layer may include forming an organic insulating layer by applying an organic insulating material over the thin film transistor; Placing a first exposure mask on the organic insulating layer, the first exposure mask having a light transmitting region, a blocking region, and a semi-transmissive region, and performing exposure and dry etching through the first exposure mask. Provided is a method of manufacturing a device.

The first exposure mask corresponds to the transmission area in correspondence with the transmission part, and alternately corresponds to the blocking area and the semi-transmission area in the reflection part, and in the area to form the first contact hole. Corresponding to the transmission region, the organic insulating material is one selected from photo acryl resin or benzocyclo butene (BCB).

In addition, the first protective layer is formed of a convex concave-convex structure, and the forming of the second protective layer may include forming a first inorganic insulating material layer on the entire surface of the first substrate including the first protective layer. Making a step; Forming a first photoresist layer on the first inorganic insulating material layer; Positioning a second exposure mask having a light transmission region and a blocking region on the first photoresist layer, and performing exposure and development through the second exposure mask.

The forming of the third protective layer may include forming a second inorganic insulating material layer on an entire surface of the first substrate including the second protective layer; Forming a second photoresist layer on the second inorganic insulating material layer; Positioning a third exposure mask having a light transmitting region and a blocking region over the second photoresist layer, and performing exposure and development through the third exposure mask, wherein the inorganic insulating material is silicon oxide (SiO ₂ ) or silicon nitride (SiN _x ).

The forming of the thin film transistor may include forming a gate wiring and a gate electrode on the first substrate; Forming a gate insulating film on the entire surface of the first substrate over the gate electrode; Continuously depositing and patterning amorphous silicon and impurity silicon on the gate insulating layer to form a semiconductor layer; Forming source and drain electrodes in contact with the semiconductor layer and spaced apart from each other, and the data wiring crossing the gate wiring.

Forming a common electrode on a second substrate corresponding to the first substrate; Forming a seal pattern on an edge of one of the first and second substrates; Forming a liquid crystal layer inside the seal pattern between the first and second substrates; Bonding the first and second substrates to each other, and forming a black matrix on the second substrate corresponding to the gate and data wiring of the first substrate; And forming a red, green, and blue color filter partially overlapping the black matrix and sequentially repeating the pixel matrix.

As described above, according to the present invention, a feature of the present invention is that after forming a first protective layer made of an organic insulating material, further forming a second and third protective layer made of an inorganic insulating material on top of the first protective layer. By forming, the residue of the first protective layer generated in the process of patterning the first protective layer is removed in the process of patterning the second and third protective layer, thereby preventing the residue defect caused by the residue of the first protective layer. It can be effective.

Therefore, a poor contact between the drain electrode and the pixel electrode can be prevented, and cracks or breaks of the pixel electrode can be prevented from occurring.

1 is a cross-sectional view showing a part of a display area of a liquid crystal panel in a general reflective transmissive liquid crystal display device.
2 is a cross-sectional view showing a part of a display area of a liquid crystal panel in a reflective liquid crystal display device according to an exemplary embodiment of the present invention.
3A to 3P are cross-sectional views illustrating manufacturing steps of an array substrate of a transflective liquid crystal display device according to an exemplary embodiment of the present invention.

Hereinafter, embodiments according to the present invention will be described in detail with reference to the drawings.

2 is a cross-sectional view showing a portion of a display area of a liquid crystal panel in the reflective transmissive liquid crystal display device according to an exemplary embodiment of the present invention.

As shown, the reflective liquid crystal display device according to the present invention comprises a liquid crystal panel 100 and a backlight (not shown) for irradiating light toward the front of the liquid crystal panel 100.

Here, the liquid crystal panel 100 includes an array substrate 101 at the bottom, a color filter substrate 103 at the top, and a liquid crystal layer 120 interposed between the two substrates 101 and 103. It is composed.

First, the array substrate 101 formed in the lower portion will be described in more detail. A plurality of gate wirings (not shown) are formed on the array substrate 101 by extending in a first direction in a display area for displaying an image. The data line (not shown) defining the pixel area P is formed along with the gate line (not shown) extending in the second direction crossing the direction.

In this case, the pixel area P is divided into a reflection part RA having the reflection plate 123 and a transmission part TA having only the pixel electrode 125.

The thin film transistor Tr connected to the two wires is formed at the intersection of the gate wiring (not shown) and the data wiring (not shown) in the reflecting part RA. The thin film transistor Tr is a gate wiring (not shown). The gate electrode 111 formed by branching from the top, the gate insulating film 113 and the gate insulating film 113 and the source and drain electrodes formed to be spaced apart from each other above the semiconductor layer 115 (117, 119).

Here, the semiconductor layer 125 is composed of an active layer 125a made of pure amorphous silicon (a-si: H) and an ohmic contact layer 125b made of amorphous silicon (n + a-si: H) containing impurities. The source electrode 117 is connected to a data line (not shown).

The first protective layer 121 is formed of an organic insulating material to correspond to the reflector above the thin film transistor Tr and the data line (not shown).

That is, the first passivation layer 121 has a first thickness d1 from the source and drain electrodes 117 and 119 and is formed only in the reflecting portion RA, and the first thickness d1 of the first passivation layer 121 is formed. ) Preferably has the same value as the thickness D of the liquid crystal layer 120 in the reflection part RA. This is to match the phase difference of the light felt by the user in the reflecting part RA and the transmitting part TA.

In this case, the first protective layer 121 is used as the organic insulating material. The organic insulating material is a low dielectric constant material, even when the gate wiring (not shown) or the data wiring (not shown) overlaps the pixel electrode 125. This is because no parasitic capacity is generated. This can prevent crosstalk from occurring. This is because it can be formed to have a very flat surface in view of the coating property of the organic insulating material.

Although not shown in the drawings, a buffer layer made of an inorganic insulating material may be further formed between the first protective layer 121 made of an organic insulating material and the source and drain electrodes 117 and 119. The buffer layer may include a source and a drain. By preventing contamination of the active layer 125a, ie, the channel region, exposed between the electrodes 117 and 119, the characteristics of the thin film transistor Tr may be prevented from deteriorating.

In addition, the buffer layer serves to solve a problem in that bonding characteristics between the first protective layer 121, which is an organic insulating material, and the source and drain electrodes 117 and 119 made of a metal material are poor.

The first protective layer 121 is formed to have a convex concave-convex structure on the surface thereof, so that the surface of the reflecting plate 123 formed on the reflecting part RA may have a concave-convex shape.

In particular, the reflective transmissive liquid crystal display device of the present invention is characterized in that the second and third passivation layers 210 and 220 are formed on the first passivation layer 121 as an inorganic insulating material.

In this case, the second and third protective layers 210 and 220 may also have a concave-convex structure under the influence of the surface of the first protective layer 121 positioned below the reflective part RA.

In the second and third protective layers 210 and 220, residue failure occurs due to the residue of the first protective layer 121 in the process of dry etching and patterning the first protective layer 121 made of an organic insulating material. To prevent it. We will discuss this in more detail later.

A reflective plate 123 is formed on a portion having the uneven structure of the upper portion of the third protective layer 220, that is, the reflecting portion RA, and the surface thereof has the uneven structure to effectively reflect light.

The reflecting plate 123 is formed of an opaque metal material having excellent reflection efficiency.

In this case, the second and third protective layers 210 and 220 may prevent the defect of the first protective layer 121 from occurring, and at the same time, the reflective plates may be formed of the first protective layer 121, which is an organic insulating material, and a metal material. 123) serves to solve the problem of poor bonding characteristics.

The first to third protective layers 121, 210, and 220 and the reflector 123 may include drain contact holes 119a exposing corresponding portions of the drain electrode 119, and may be transparent over the reflector 125. As the conductive material, the pixel electrode 125 contacting the drain electrode 119 through the drain contact hole 119a is formed.

The pixel electrode 125 is formed on the entire surface of the reflective part RA and the transmissive part TA. That is, the pixel electrode 125 of the reflective part RA is formed on the reflective plate 123 and the pixel electrode of the transmissive part TA. 125 is formed on the gate insulating film 113.

At this time, the pixel electrode 125 formed in the reflecting part RA is also affected by the shape of the reflecting plate 123 positioned below the surface of the pixel electrode 125.

The color filter substrate 103 facing the array substrate 101 with the cross-sectional structure facing the liquid crystal layer 120 interposed therebetween includes gate and data wiring (not shown) and a thin film transistor (not shown) of the array substrate 101. A grid-like black matrix 131 is formed to surround the pixel region P so as to expose only the pixel electrode 125 while covering a non-display element such as Tr.

In addition, transparent coverings of the red (R), G (green), and B (blue) color filters 129 sequentially and repeatedly arranged in correspondence with each pixel region P in the black matrix 131 grating are provided. The common electrode 133 is included.

In addition, although not clearly shown in the drawings, the upper and lower alignment layers for determining the initial molecular alignment direction of the liquid crystal are interposed between the two substrates 101 and 103 and the liquid crystal layer 120, and the liquid crystal filled therebetween. Seal patterns are formed along the edges of both substrates 101 and 103 to prevent leakage of layer 120.

A backlight having a plurality of optical sheets, a plurality of lamps, and a reflecting sheet is provided below the array substrate 1 to form a reflection type liquid crystal display device.

In the reflective liquid crystal display device having such a structure, one pixel area P is largely divided into a transmissive part TA and a reflective part RA to operate in a reflective and transmissive mode, thereby minimizing power consumption.

In particular, in the reflective transmissive liquid crystal display device of the present invention, even when residues of the first protective layer 121 are generated during dry etching and patterning of the first protective layer 121 made of an organic insulating material, the drain electrode 119 is formed. And defects caused by residues of the first protective layer 121 such as cracks in the pixel electrodes 125 and cracks in the pixel electrodes 125 can be prevented.

That is, the first protective layer 121 made of an organic insulating material is patterned by using dry etching in the process of forming the drain contact hole 119a exposing the drain electrode 119 or being removed from the transmission TA. In this case, the first passivation layer 121 is not patterned cleanly due to the material properties, and residues are generated.

The residue remains on the upper portion of the drain electrode 119 or at the boundary between the reflective part RA and the transmissive part TA, resulting in poor contact between the drain electrode 119 and the pixel electrode 125, or the reflective part. Cracks or breaks in the pixel electrode 125 formed on the entire surface of the RA and the transmissive part TA may occur.

However, in the reflective transmissive liquid crystal display device of the present invention, the second and third protective layers 210 and 220 are further formed on the first protective layer 121, thereby forming the second and third protective layers 210 and 220. In the process of patterning the residues of the first passivation layer 121 is also patterned together and the second and third passivation layers 210 and 220 surround the residues of the first passivation layer 121. This will be described in more detail with reference to the manufacturing process cross-sectional views of FIGS. 3A to 3P.

At this time, the reflective transparent liquid crystal display device of the present invention will be described only the manufacturing method of the array substrate 101, since the array substrate 101 includes a characteristic portion of the present invention.

3A to 3P are cross-sectional views illustrating manufacturing steps of an array substrate of a transflective liquid crystal display according to an exemplary embodiment of the present invention.

First, as shown in FIG. 3A, a thin film transistor Tr is formed in the reflecting portion RA on the substrate 101. The thin film transistor Tr includes a gate electrode 111, a gate insulating film 113, and a semiconductor layer. 115 and source and drain electrodes 117 and 119. Although not shown in the drawings, the formation method thereof will be described in more detail. First, a first metal layer is formed and patterned on the substrate 101 to form a gate. A wiring (not shown), a gate electrode 111 and a common wiring (not shown) are formed.

In this case, the first metal layer is formed by selecting one of conductive metal groups including aluminum (Al), aluminum alloy, copper (Cu), tungsten (W), molybdenum (Mo), and chromium (Cr).

Next, silicon nitride (SiNx) or silicon oxide (SiO ₂ ) is deposited on the entire surface of the substrate 101 to form a gate insulating film 113, and then on the gate insulating film 113 on the gate electrode 111. An active layer 115a formed of pure amorphous silicon (a-Si: H) and an ohmic contact layer 115b formed of impurity amorphous silicon (n + a-Si: H) are formed on the semiconductor layer 115. Form.

Next, a second metal layer is formed and patterned on the entire surface of the substrate 101 on which the ohmic contact layer 115b is formed, thereby patterning the data wirings (not shown) that intersect with the gate wirings (not shown) and the common wirings (not shown). And a source electrode 117 extending from the data line (not shown) and a drain electrode 119 spaced a predetermined distance from the source electrode 117.

In this case, the semiconductor layer 115 including the source and drain electrodes 117 and 119 and the ohmic contact layer 115b and the active layer 115a disposed below the semiconductor layer 115 may be formed through a separate mask process. As a modification, the semiconductor layer 115 and the source and drain electrodes 117 and 119 may be formed through one mask process.

Next, as shown in FIG. 3B, an organic insulating material of photo acryl resin or BCB (benzo cyclobutene) is disposed on the entire surface of the substrate 101 on which the source and drain electrodes 117 and 119 are formed. Thick coating is performed to form the first protective layer 121.

Next, as shown in FIG. 3C, a mask 150 having a transmissive region TmA, a blocking region BkA, and a transflective region HTmA is positioned on the first passivation layer 121. At this time, the transmission area TA on the mask 150 corresponds to the transmission part TA on the substrate 101, and the blocking area BkA is concave at the portion where the convex uneven pattern is to be formed in the reflection part RA. The first mask 150a is positioned on the portion where the portion is to be formed so that the transflective region HTmA corresponds.

In addition, the transmission region TmA corresponds to a portion of the reflector RA corresponding to the drain electrode 119. In this case, the first passivation layer 121 is a photosensitive material, and is a positive type having a characteristic in which a portion that receives light is developed and removed.

Thereafter, as illustrated in FIG. 3D, the first protective layer 121 is dry-etched on the first protective layer 121 on the substrate 101 through the first mask 150a positioned on the substrate 101. In this case, the first protective layer 121 is completely etched in the transmissive part TA to expose the lower gate insulating layer 113, and the surface of the first protective layer 121 is reflected in the reflecting part RA. The convex concave-convex structure is provided, and the first protective layer 121 in the region corresponding to the drain electrode 119 is completely etched to form the drain contact hole 119a exposing the drain electrode 119.

Subsequently, the substrate 101 on which the uneven structure is formed is heat-treated so that the convex uneven pattern of the reflecting portion RA has a gentle slope as shown in FIG. 3E.

At this time, the residue 121a of the first passivation layer 121 is generated on the drain electrode 119 exposed through the drain contact hole 119a, and the gate insulating layer bordering the reflective part RA and the transmission part TA. The residue 121a of the first passivation layer 121 is also generated on the upper portion of the 113.

The residue 121a degrades contact characteristics between the drain electrode 119 and the pixel electrode 125 of FIG. 2, or the pixel electrode to be formed on the entire surface of the reflector RA and the transmission TA. 125) may cause cracks or breaks.

Accordingly, as shown in FIG. 3F, the silicon oxide (SiO ₂ ) or the silicon nitride (SiO) or the silicon nitride (SiO) is formed on the entire surface of the reflection part RA and the transmission part TA including the drain electrode 119 exposed through the drain contact hole 119a. An inorganic insulating material such as SiN _x ) is deposited to form the second protective layer 210.

Thereafter, as shown in FIG. 3G, the first photoresist layer 210a is formed by applying photoresist on the second passivation layer 210, and then the transmissive region is formed on the first photoresist layer 210a. TmA) and a second mask 150b having a blocking area BkA.

In this case, the transmission area TA on the second mask 150b corresponds to the transmission part TA on the substrate 101, and the blocking area BkA corresponds to the drain electrode 119 in the reflection part RA. The transmissive area (TmA) is to correspond to the portion.

Thereafter, as illustrated in FIG. 3H, the first photoresist layer 210a on the substrate 101 is exposed and developed through the second mask 150b positioned on the substrate 101.

As a result, the first photoresist layer 210a is developed and removed in the transmissive portion TA on the upper portion of the second protective layer 210 to expose the second protective layer 210, and the first portion of the reflective portion RA is exposed. The photoresist pattern 210b is formed.

Next, as illustrated in FIG. 3I, the second protective layer 210 exposed to the outside of the first photoresist pattern 210b of FIG. 3H is etched to form the second protective layer 210 in the transmissive part TA. ) Is completely etched to expose the lower gate insulating layer 113, and even in the region where the drain contact hole 119a is formed, the second protective layer 210 is completely etched to expose the drain electrode 119.

Subsequently, ashing is performed to remove the first photoresist pattern 210b of FIG. 3H, thereby partially exposing a portion of the second protective layer 210 in the reflector RA. At this time, the second protective layer 210 of the reflector RA has a concave-convex structure whose surface is convex by the first protective layer 121.

At this time, in the process of patterning the second passivation layer 210, the residue 121a of the first passivation layer 121 existing on the upper portion of the drain electrode 119 and the boundary between the reflecting portion RA and the transmitting portion TA. It is also etched together so that some of it is removed.

Meanwhile, in the process of etching the residue 121a of the first protective layer 121 together with the second protective layer 210, the first protective layer 121, which is an organic insulating material, and the second protective layer, which is an inorganic insulating material ( Due to the difference in the etching ratio of the 210, an undercut phenomenon occurs in which the residue 121a of the first protective layer 121 is overetched.

The undercut phenomenon may cause cracking or breakage of the pixel electrode (125 in FIG. 2) formed thereon, which may cause problems such as poor driving and unsatisfactory defects due to poor contact.

Accordingly, as illustrated in FIG. 3J, an inorganic insulating material such as silicon oxide (SiO ₂ ) or silicon nitride (SiN _x ) is deposited on the reflecting portion RA and the transmitting portion TA to form the third protective layer 220. Form.

Subsequently, as shown in FIG. 3K, the second photoresist layer 220a is formed by applying photoresist on the third passivation layer 220, and then the agent having a transmission region TmA and a blocking region BkA. 2 Place the mask 150b.

In this case, the transmission area TA on the second mask 150b corresponds to the transmission part TA on the substrate 101, and the blocking area BkA corresponds to the drain electrode 119 in the reflection part RA. The transmissive area (TmA) is to correspond to the portion.

Thereafter, as shown in FIG. 3L, the third protective layer 220 is exposed and developed by exposing and developing the second photoresist layer 220a on the substrate 101 through the second mask 150b positioned on the substrate 101. The second photoresist layer 220a is developed and removed in the transmissive part TA of the upper part to expose the third protective layer 220, and the second photoresist pattern 220b is formed in the reflecting part RA. .

Next, as shown in FIG. 3M, the third protective layer 220 exposed to the outside of the second photoresist pattern 220a of FIG. 3L is etched to form a third protective layer 220 in the transmission part TA. ) Is completely etched to expose the lower gate insulating layer 113, and even in the region where the drain contact hole 119a is formed, the third protective layer 220 is etched completely to expose the drain electrode 119.

Subsequently, ashing is performed to remove the second photoresist pattern 220b of FIG. 3L, thereby partially exposing a portion of the third protective layer 220 in the reflector RA. At this time, the third protective layer 220 has a concave-convex structure whose surface is convex by the second protective layer 210.

At this time, in the process of patterning the third passivation layer 220, the residue 121a of the first passivation layer 121 partially present on the upper portion of the drain electrode 119 and the boundary between the reflecting portion RA and the transmitting portion TA. Also, the third protective layer 220 completely encapsulates the residue 121a in which the undercut of the first protective layer 121 is formed while a portion of the third protective layer 220 is removed.

Therefore, the residue 121a of the first passivation layer 121 is slightly left at the boundary between the upper portion of the drain electrode 119 exposed through the drain contact hole 119a and the reflection part RA and the transmission part TA. The undercut phenomenon of the residue 121a of the first passivation layer 121 may be surrounded by the third passivation layer 220, thereby causing cracking or breaking of the pixel electrode 127 of FIG. 2. You can prevent it.

Next, as illustrated in FIG. 3N, a reflective metal 123a is formed on the entire surface of the third protective layer 220 by depositing a metal material having high reflectance, for example, aluminum (Al) or aluminum alloy (Al alloy). do.

Subsequently, after the photoresist is applied on the reflective layer 123a, the blocking region corresponds to the drain contact hole 119a in the reflecting portion RA so that the transmissive region corresponds to the other region, and the transmissive portion TA In response to this, a mask (not shown) is positioned to correspond to the blocking region, and then the reflective layer 123a is exposed and developed.

As a result, as shown in FIG. 3O, the reflective layer (123a in FIG. 3N) is completely etched in the transmissive portion TA to expose the lower gate insulating layer 113, and the reflective layer (see FIG. 3N in the reflective portion RA). The surface of the 123a has a convex concave-convex structure, and the reflective layer (123a in FIG. 3N) corresponding to the drain electrode 119 is completely etched to form the reflecting plate 123 exposing the drain electrode 119. .

Next, as shown in FIG. 3P, a transparent conductive material such as indium-tin-oxide is formed on the entire surface of the first substrate 101 including a reflecting plate 123 and a gate insulating film 113 having a concave-convex structure. ITO) or indium-zinc-oxide (IZO) by depositing and patterning the same through a mask process, thereby contacting the drain electrode 119 through the drain contact hole 119a and extending to the transmission part TA. ), An array substrate for reflection transmissive liquid crystal display device is completed.

As described above, in the reflective transmissive liquid crystal display device of the present invention, after forming the first protective layer 121 made of the organic insulating material, the second and the second made of an inorganic insulating material on the first protective layer 121. By further forming the third protective layers 210 and 220, the residues 121a of the first protective layer 121 generated in the process of patterning the first protective layer 121 are transferred to the second and third protective layers 210,. By removing the 220 in the process of patterning, it is possible to prevent a residue defect caused by the residue 121a of the first protective layer 121.

The present invention is not limited to the above embodiments, and various modifications can be made without departing from the spirit of the present invention.

100: liquid crystal panel, 101: first substrate, 103: second substrate
111: gate electrode, 113: gate insulating film
115: semiconductor layer 115a: active layer, 115b ohmic contact layer
117: source electrode, 119: drain electrode, 119a: drain contact hole
120: liquid crystal layer, 121: first protective layer, 123: reflector, 125: pixel electrode
129: R (red), G (green), B (blue) color filter, 131: Black matrix
133: common electrode, Tr: thin film transistor, P: pixel region
RA: Reflector, TA: Transmitter

Claims (11)

Forming a thin film transistor on a gate line, a data line, and an intersection of the two lines on a first substrate having a pixel area having a transmissive part and a reflecting part;
Forming a first protective layer using an organic insulating material on an entire surface of the first substrate on which the thin film transistor is formed;
Patterning the first protective layer to form a first contact hole exposing a portion of the thin film transistor and simultaneously removing the thin film transistor from the transmission portion;
Forming a second protective layer as an inorganic insulating material on an entire surface of the first substrate including the first protective layer;
Patterning the second passivation layer to form a second contact hole exposing a portion of the thin film transistor and removing the same from the transmission portion;
Forming a third protective layer as an inorganic insulating material on an entire surface of the first substrate including the second protective layer;
Patterning the third passivation layer to form a third contact hole exposing a portion of the thin film transistor and to remove it from the transmission portion;
Forming a reflector on the third passivation layer;
Forming a pixel electrode on the reflective part including the reflective plate and the transmission part to contact a portion of the thin film transistor through the first to third contact holes
And a second passivation layer and a second passivation layer, wherein the residue of the first passivation layer is removed.
The method of claim 1,
Forming the first protective layer,
Forming an organic insulating layer by applying an organic insulating material on the thin film transistor;
Placing a first exposure mask on the organic insulating layer, the first exposure mask having a light transmitting region, a blocking region, and a semi-transmissive region, and performing exposure and dry etching through the first exposure mask. Method of manufacturing the device.
The method of claim 2,
The first exposure mask corresponds to the transmissive area corresponding to the transmissive part, and alternately corresponds to the blocking area and the transflective area in the reflective part, and to the transmissive area in an area to form the first contact hole. A method of manufacturing a reflective transmissive liquid crystal display device.
The method of claim 1,
The organic insulating material is a method of manufacturing a reflective transmissive liquid crystal display device comprising one selected from photo acryl resin or benzo cyclobutene (BCB).
The method of claim 1,
The first protective layer is a manufacturing method of a reflective liquid crystal display device having a convex concave-convex structure.
The method of claim 1,
Forming the second protective layer,
Forming a first inorganic insulating material layer on an entire surface of the first substrate including the first protective layer;
Forming a first photoresist layer on the first inorganic insulating material layer;
Positioning a second exposure mask having a light transmission region and a blocking region on the first photoresist layer, and performing exposure and development through the second exposure mask. .
The method of claim 1,
Forming the third protective layer,
Forming a second inorganic insulating material layer on an entire surface of the first substrate including the second protective layer;
Forming a second photoresist layer on the second inorganic insulating material layer;
Positioning a third exposure mask having a light transmission region and a blocking region on the second photoresist layer, and performing exposure and development through the third exposure mask. .
The method of claim 1,
And the inorganic insulating material is one selected from silicon oxide (SiO ₂ ) or silicon nitride (SiN _x ).
The method of claim 1,
Forming the thin film transistor,
Forming a gate wiring and a gate electrode on the first substrate;
Forming a gate insulating film on the entire surface of the first substrate over the gate electrode;
Continuously depositing and patterning amorphous silicon and impurity silicon on the gate insulating layer to form a semiconductor layer;
Forming a data line in contact with the semiconductor layer, the source and drain electrodes spaced apart from each other, and the data line crossing the gate line;
Method for manufacturing a reflection-transmissive liquid crystal display device comprising a.
The method of claim 1,
Forming a common electrode on a second substrate corresponding to the first substrate;
Forming a seal pattern on an edge of one of the first and second substrates;
Forming a liquid crystal layer inside the seal pattern between the first and second substrates;
Bonding the first and second substrates together
Method for manufacturing a reflection-transmissive liquid crystal display device comprising a.
The method of claim 10,
Forming a black matrix on the second substrate corresponding to the gate and data wiring of the first substrate;
Forming a red, green, and blue color filter partially overlapping the black matrix and sequentially repeating the pixel region;
Method for manufacturing a reflection-transmissive liquid crystal display device comprising a.

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