KR20110114299A - Pellicle for phase shift mask, the phase shift mask attached the pellicle, and method of fabricating the phase shift mask attached the pellicle - Google Patents

Pellicle for phase shift mask, the phase shift mask attached the pellicle, and method of fabricating the phase shift mask attached the pellicle Download PDF

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Publication number
KR20110114299A
KR20110114299A KR1020100033868A KR20100033868A KR20110114299A KR 20110114299 A KR20110114299 A KR 20110114299A KR 1020100033868 A KR1020100033868 A KR 1020100033868A KR 20100033868 A KR20100033868 A KR 20100033868A KR 20110114299 A KR20110114299 A KR 20110114299A
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KR
South Korea
Prior art keywords
pellicle
phase shift
phase inversion
frame
mask
Prior art date
Application number
KR1020100033868A
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Korean (ko)
Inventor
우성하
Original Assignee
주식회사 하이닉스반도체
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Priority to KR1020100033868A priority Critical patent/KR20110114299A/en
Publication of KR20110114299A publication Critical patent/KR20110114299A/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

The pellicle for the phase shift mask according to an embodiment of the present invention, a light-transmitting pellicle membrane disposed to face the upper surface formed with the pattern of the phase shift mask, the upper portion is attached to the pellicle membrane, the lower portion is attached to the phase inversion mask And a blocking film attached to the frame in a size overlapping the light blocking region of the phase shift mask at the bottom of the frame.

Description

A pellicle for a phase inversion mask, a phase inversion mask attached thereto and a method of manufacturing the same {Pellicle for phase shift mask, the phase shift mask attached the pellicle, and method of fabricating the phase shift mask attached the pellicle}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photomask, and more particularly, to a pellicle for a phase inversion mask, a phase inversion mask to which the same is attached, and a manufacturing method thereof.

The phase shift mask is to use the interference effect to reduce the spatial frequency of the pattern by appropriately inverting the phase of light on the mask or to increase the edge contrast. It is known that resolution is realized and the depth of focus is increased. There are many kinds of such phase inversion masks, but the most common one is a structure employing a phase inversion film pattern.

1 is a cross-sectional view showing a general phase inversion mask. Referring to FIG. 1, a phase inversion film pattern 120 is disposed on a light transmitting substrate 110 that transmits light having a predetermined wavelength. The phase inversion film pattern 120 is for inverting the phase of transmitted light, for example, 180 degrees, and may be formed of a molybdenum silicon (MoSi) film in one example. The phase inversion film pattern 120 is exposed in the main pattern area where the main pattern of the phase inversion mask is disposed, but the light blocking film pattern 130 is disposed on the phase inversion film pattern 120 in the frame area surrounding the main pattern area. Therefore, light cannot be transmitted in this region.

2 is a view illustrating a structure in which a pellicle is mounted on the phase inversion mask of FIG. 1. As shown in FIG. 2, the pellicle 200 is disposed to cover the top surface of the phase inversion mask along the light blocking layer pattern 120 in the frame region of the phase inversion mask. The pellicle 200 as described above prevents the phase shift mask from being affected by an external pollution source. When the light is irradiated to the rear surface of the phase inversion mask as indicated by the arrow in the figure, the light is transmitted as it is in the region where the light transmissive substrate 110 is exposed, while the region in which the phase inversion film pattern 120 is exposed. In the light, the phase is transmitted by reversing the phase 180 degrees. In addition, light is not transmitted in the frame region in which the light blocking layer pattern 130 is disposed. This shows the light amplitude and light intensity distribution as shown in the graph below in FIG. 2.

In order to manufacture the phase inversion mask of FIG. 1, first, a first patterning process for forming the phase inversion film pattern 120 on the light transmissive substrate 110 is performed, and then a second step for forming the light blocking film pattern 130 is performed. The patterning process should be performed. Since the patterning process has to be performed twice, the overall process step is complicated. In particular, the light blocking film pattern 130 is formed of a chromium (Cr) film, and the phase inversion film pattern in the process of patterning the chromium (Cr) film. The 120 may be damaged or may cause foreign matter, and thus, the second patterning process may increase the defect rate of the phase inversion mask.

SUMMARY OF THE INVENTION An object of the present invention is to provide a pellicle for a phase inversion mask, which makes the second patterning process unnecessary in manufacturing the phase inversion mask.

An object of the present invention is to provide a phase inversion mask employing the pellicle for the phase inversion mask and a method of manufacturing the same.

The pellicle for the phase shift mask according to an embodiment of the present invention, a light-transmitting pellicle membrane disposed to face the upper surface formed with the pattern of the phase shift mask, the upper portion is attached to the pellicle membrane, the lower portion is attached to the phase inversion mask And a blocking film attached to the frame in a size overlapping the light blocking region of the phase shift mask at the bottom of the frame.

The light blocking region may be a frame region of the phase inversion mask.

According to an embodiment of the present invention, a phase shift mask includes a light transmissive substrate having a main pattern region and a frame region surrounding the main pattern region, a phase reversal membrane pattern disposed on the light transmissive substrate, a light-transmitting pellicle membrane, and a pellicle membrane And a pellicle attached to the phase inversion pattern of the frame region so that the frame is attached to the phase inversion pattern of the frame region and the blocking layer attached to the frame.

The blocking film may be made of a chromium film.

A method of manufacturing a phase shift mask according to an embodiment of the present invention includes the steps of forming a phase shift pattern by performing primary patterning on a light transmissive substrate having a main pattern region and a frame region surrounding the main pattern region, and translucent A pellicle consisting of a pellicle membrane of the frame, a frame attached to the phase inversion film pattern of the frame region while supporting the pellicle membrane, and a blocking film attached to the frame, are attached on the phase inversion film pattern of the frame region, wherein the blocking film and the frame region overlap each other. It includes the steps to make.

Attachment of the pellicle can be performed using a robot arm.

The first patterning may include forming a phase shift film on the light transmissive substrate, forming a resist film pattern having an opening exposing a portion of the surface of the phase shift film on the phase shift film, and etching the resist film pattern. And removing the exposed portion of the phase shift film by etching using a mask to form a phase shift film pattern exposing a part of the surface of the transmissive substrate, and removing the resist film pattern.

According to the present invention, by using a pellicle having a blocking film attached to overlap the frame region of the phase inversion mask, the light blocking layer pattern is not required in the frame region of the phase inversion mask, thereby forming a light blocking film pattern. It is possible to omit the difference patterning process, which provides an advantage of simplifying the manufacturing process of the phase inversion mask.

1 is a cross-sectional view showing a general phase inversion mask.
2 is a view illustrating a structure in which a pellicle is mounted on the phase inversion mask of FIG. 1.
3 is a cross-sectional view showing a pellicle for a phase inversion mask according to an embodiment of the present invention.
4 is a cross-sectional view illustrating a phase inversion mask to which the pellicle of FIG. 3 is attached.
5 to 7 are cross-sectional views illustrating a method of manufacturing the phase shift mask of FIG. 4.
FIG. 8 is a diagram illustrating an amplitude and intensity of light during exposure using the phase inversion mask of FIG. 4.

3 is a cross-sectional view showing a pellicle for a phase inversion mask according to an embodiment of the present invention. Referring to FIG. 3, the pellicle 300 for a phase shift mask according to the present example includes a pellicle membrane 310 disposed to face a surface having a main pattern of the phase shift mask and a pellicle membrane 310 as a phase shift mask. And a blocking film 330 disposed to overlap the frame region of the phase inversion mask at a lower end of the frame 320. The pellicle membrane 310 is made of a light-transmissive material to allow light to pass through during exposure. An adhesive layer (not shown) for attaching to the phase shift mask and the pellicle membrane 310 may be disposed on the lower end and the upper end of the frame 320, respectively. The blocking film 330 is a film for blocking the transmission of light. In the region where the blocking film 330 is located, the light is irradiated onto the wafer by the blocking film 330 even if the light passes through the phase inversion mask. The blocking film 330 may be formed of a chromium (Cr) film, but may be formed of another material having light blocking properties.

4 is a cross-sectional view illustrating a phase inversion mask to which the pellicle of FIG. 3 is attached. Referring to FIG. 4, the phase inversion mask has a structure in which the phase inversion film pattern 420 is disposed on the light transmissive substrate 410. That is, the phase inversion film pattern 420 is exposed to the frame area where light transmission is to be blocked while surrounding the main pattern area in which the phase inversion film pattern 420 is disposed. A pellicle (300 of FIG. 3) having the blocking film 330 attached thereto is attached to the phase inversion mask. As the pellicle is attached, the blocking film 330 of the pellicle and the frame region of the phase shift mask overlap each other, so that light is not transmitted through the frame region of the phase shift mask.

5 to 7 are cross-sectional views illustrating a method of manufacturing the phase shift mask of FIG. 4. First, as shown in FIG. 5, a phase inversion film 422 is formed on a light transmitting substrate 410 such as quartz. Then, a resist film pattern 500 is formed thereon. The resist film pattern 500 has an opening that exposes a part of the phase inversion film 422 of the main pattern region. Next, as shown in FIG. 6, the exposed portion of the phase inversion film (422 of FIG. 5) is removed by etching using the resist film pattern 500 as an etching mask. This etching exposes a part of the surface of the translucent substrate 410 in the main pattern region of the phase inversion mask, and a phase inversion film pattern 420 is formed in the frame region of the phase inversion mask to cover all of the transmissive substrate 410. Next, as shown in FIG. 7, the resist film pattern (500 of FIG. 6) is removed. After the first patterning process is performed to form the phase inversion film pattern 420, the pellicle 300 according to an example of the present invention is attached without performing the second patterning process. At this time, the attachment of the pellicle 300 is performed so that the blocking film 330 disposed at the lower end of the frame 320 of the pellicle 300 is attached to the phase inversion film pattern 420 in the frame region. By using the position of the pellicle 300 can be precisely controlled.

FIG. 8 is a diagram illustrating an amplitude and intensity of light during exposure using the phase inversion mask of FIG. 4. As indicated by the arrows in FIG. 8, when light is irradiated onto the back surface of the phase inversion mask to which the pellicle is attached, the light is transmitted in the area where the light transmissive substrate 410 is exposed, whereas the phase inversion film pattern 420 is In the exposed area, the light is transmitted with the phase reversed by 180 degrees. At this time, the light irradiated in the frame region passes through the phase inversion film pattern 420, but light transmission is blocked by the blocking film 330 attached to the pellicle, and as a result, as shown in the graph below in FIG. The same optical amplitude and light intensity distribution as in the case of using a normal phase inversion mask having a light shielding film pattern in FIG.

300 ... pellicle 310 ... pellicle membrane
320 ... Frame 330 ... Block
410 Transmissive substrate 420 Phase reversal pattern
500 ... resist film pattern

Claims (7)

A translucent pellicle membrane disposed to face the upper surface on which the pattern of the phase inversion mask is formed;
A frame having an upper portion attached to the pellicle membrane and a lower portion attached to the phase shift mask; And
A pellicle for a phase inversion mask having a blocking film attached to the frame at a size overlapping the light blocking region of the phase inversion mask at the bottom of the frame. The method of claim 1,
The light shielding region is a pellicle for a phase shift mask that is a frame region of the phase shift mask. A translucent substrate having a main pattern region and a frame region surrounding the main pattern region;
A phase inversion film pattern on the light-transmitting substrate; And
A light-transmitting pellicle membrane, a frame attached to the phase inversion film pattern of the frame region while supporting the pellicle membrane, and a blocking film attached to the frame, wherein the blocking film overlaps the frame region. Phase inversion mask comprising a pellicle attached to the phase inversion film pattern. The method of claim 3,
The blocking film is a phase inversion mask made of a chromium film. Forming a phase shift film pattern by performing primary patterning on a light-transmitting substrate having a main pattern region and a frame region surrounding the main pattern region; And
A pellicle comprising a light-transmitting pellicle membrane, a frame attached to the phase inversion film pattern of the frame region while supporting the pellicle membrane, and a blocking film attached to the frame is attached to the phase inversion film pattern of the frame region, A method of manufacturing a phase shift mask comprising the step of overlapping a blocking film and the frame region. The method of claim 5,
Attaching the pellicle is a method of manufacturing a phase inversion mask is performed using a robot arm. The method of claim 5, wherein performing the primary patterning comprises:
Forming a phase inversion film on the light transmitting substrate;
Forming a resist film pattern on the phase shift film, the resist film pattern having an opening exposing a part of the surface of the phase shift film;
Removing the exposed portion of the phase shift film by etching the resist film pattern as an etch mask to form a phase shift film pattern exposing a part of the surface of the light transmissive substrate; And
A method of manufacturing a phase shift mask comprising removing the resist film pattern.
KR1020100033868A 2010-04-13 2010-04-13 Pellicle for phase shift mask, the phase shift mask attached the pellicle, and method of fabricating the phase shift mask attached the pellicle KR20110114299A (en)

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KR1020100033868A KR20110114299A (en) 2010-04-13 2010-04-13 Pellicle for phase shift mask, the phase shift mask attached the pellicle, and method of fabricating the phase shift mask attached the pellicle

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Application Number Priority Date Filing Date Title
KR1020100033868A KR20110114299A (en) 2010-04-13 2010-04-13 Pellicle for phase shift mask, the phase shift mask attached the pellicle, and method of fabricating the phase shift mask attached the pellicle

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9874809B2 (en) 2015-09-04 2018-01-23 Samsung Electronics Co., Ltd. Pellicle for a reflective mask and reflective mask assembly including the same
US10983430B2 (en) * 2018-02-22 2021-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Mask assembly and haze acceleration method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9874809B2 (en) 2015-09-04 2018-01-23 Samsung Electronics Co., Ltd. Pellicle for a reflective mask and reflective mask assembly including the same
US10983430B2 (en) * 2018-02-22 2021-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Mask assembly and haze acceleration method
US11703752B2 (en) 2018-02-22 2023-07-18 Taiwan Semiconductor Manufacturing Company, Ltd. Method of accelerated hazing of mask assembly

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