KR20110113472A - Compound for hardmask and composition for hardmask comprising the same - Google Patents

Abstract

The present invention relates to a hard mask compound and a hard mask composition comprising the same, and more particularly, in order to form a mask film having excellent etching resistance applicable to a fine pattern forming process of a semiconductor device, a crosslink including silicon and a hydrocarbon component The present invention relates to a hard mask compound including a compound having a linear structure that is easily bonded, and a hard mask composition including the hard mask compound, a crosslinking agent, a crosslinking density auxiliary resin, a catalyst, and an organic solvent. In the present invention, the hard mask composition is coated on the etched layer before the photoresist pattern is formed by spin coating, and then hardened, thereby providing excellent etching resistance and hardening of the etching selectivity of the photoresist pattern with respect to the etched layer. A mask film can be formed.

Description

Compound for hard mask and hard mask composition comprising same {Compound for Hardmask and Composition for Hardmask Comprising the Same}

The present invention relates to an organic-inorganic polymer compound for a hard mask and a hard mask composition comprising the same.

As the application fields of semiconductor devices expand in recent years, development of new process technologies for manufacturing high-capacity memory devices with improved integration is required. For example, in order to form a line pattern or contact hole pattern having a critical dimension (CD) of 0.07 μm or less, ArF (I) instead of a lithography process using a long wavelength light source of I-line or KrF (248 nm) as an exposure source. A lithography process using a chemically amplified deep ultra violet (DUV) short wavelength light source such as 193 nm) or VUV (157 nm) as an exposure source has been introduced.

However, due to the high integration of semiconductor devices, the aspect ratio of the photoresist pattern obtained by the lithography process increases, and the capillary force between the photoresist patterns increases during the subsequent cleaning process, causing the photoresist pattern to collapse. The problem was caused.

In order to improve this disadvantage, when the thickness of the photoresist film is reduced to 200 nm or less in order to prevent photoresist pattern collapse during the fine pattern formation process of 100 nm or less, the lower etching layer in the etching process using the photoresist pattern as an etching mask It was not possible to sufficiently secure the etching selectivity of the photoresist pattern with respect to the formation of a uniform circuit pattern.

In particular, in the case of a photoresist material suitable for a short wavelength light source, since an aliphatic compound is included as a main component instead of an aromatic compound such as benzene, it is very difficult to secure sufficient etching resistance for an efficient etching process. For example, when etching an etched layer made of an insulating film, such as a silicon oxide film (SiO ₂ ), deformation of the etched layer is caused, and thus, semiconductor device manufacturing is almost impossible.

In order to remedy these shortcomings, an insulating film having a similar or relatively higher etching selectivity and a higher etching selectivity between an etched layer (silicon oxide film) and a photoresist layer of a semiconductor substrate or a multilayer hard mask film made of an amorphous carbon layer is used. The method of introducing and improving the etching selectivity of the photoresist film with respect to an etching layer is applied. The amorphous carbon layer is a material having the same properties as an organic material, and is not limited by the coating thickness of the formed photoresist film because a sufficient selectivity with respect to the lower layer can be obtained even when formed with a thin thickness.

However, the deposition process of the amorphous carbon layer and the insulating film requires not only a separate deposition equipment different from the photoresist coating process, but also a very low deposition efficiency because complex process steps must be performed to form a multilayer. Therefore, another problem arises in that the throughput is lowered and the manufacturing cost is increased.

Accordingly, in order to simplify the process and reduce the process cost, it is urgent to develop a hard mask film having a simple deposition method and an excellent etching resistance while serving as an antireflection film as an alternative material for the amorphous carbon layer.

An object of the present invention is to provide a hard mask compound having a linear structure and a hard mask composition comprising the same easily cross-linking during the pattern formation process for forming an etched layer pattern.

Moreover, an object of this invention is to provide the pattern formation method of the semiconductor element using the said composition for hard masks.

In order to achieve the above object,

The present invention provides a hard mask compound represented by the compound represented by the following Chemical Formula 1, which contains both an inorganic component and a hydrocarbon component, which is an organic component, and has a linear structure in which crosslinking is advantageous.

[Formula 1]

Wherein R ₁ is C ₁ -C ₁₀ straight or branched alkyl, n is 4-6.

The hard mask compound of the present invention is a substance capable of improving the etching selectivity of the hard mask film by the bonding structure of the carbon atom, which is an organic component, and the silicon, which is an inorganic component. The silicon (Si) component must be included to secure the etching selectivity of the hard mask layer with respect to the etching layer. The molecular weight of the compound is 1,100 to 1,600, more specifically, it can be represented by the compound of formula (1a).

[Formula 1a]

Wherein n is 4-6.

At this time, the compound of Formula 1a is a compound of the formula (2) and acetonide-2,2-bis (methoxy) propionic acid (acetonide-2,2-bis (methoxy) propionic acid) in a methylene chloride solvent in a base atmosphere After esterification at an equivalent weight of 1: 10.4, a hydroxy group can be obtained by decomposing the acetonide group of the terminal group using an ion exchange resin in an acid atmosphere.

[Formula 2]

Wherein n is 4-6.

The present invention also provides a hard mask composition comprising a compound for a hard mask represented by the compound of Formula 1, a crosslinking agent, a crosslinking density auxiliary resin, a catalyst, and an organic solvent.

In this case, the crosslinking agent is a polymer compound having a molecular weight of 100 to 10,000 with a benzene ring or an aliphatic ring backbone containing two or more methoxy or epoxy structures, and reacts with the hardmask compound in the presence of a catalyst to form a crosslinked structure. . Preferably, the crosslinking agent may be tetramethoxy-methylglycoluril or O-cresol novolac epoxy resin. The crosslinking agent is preferably contained in 10 to 100 parts by weight based on 100 parts by weight of the total amount of the compound for the hard mask in the composition for the hard mask.

In addition, the crosslinking density auxiliary resin is preferably a polymer compound having a molecular weight of 100 to 5,000 having a hydroxy (—OH) functional group in the benzene ring backbone, and preferably poly (4-hydroxystyrene). The crosslinking density auxiliary resin reacts with the hard mask compound and the crosslinking agent in the presence of a catalyst to increase the crosslinking density of the cured product. The crosslinking density auxiliary resin is preferably contained in 10 to 50 parts by weight based on 100 parts by weight of the total amount of the compound for the hard mask.

The crosslinking agent and the crosslinking density auxiliary resin having the benzene ring as a main chain exhibit high absorbance with respect to a DUV light source, particularly an ArF light source having a wavelength of 193 nm, and thus remove light reflected from a lower layer, standing waves, etc. Can be increased. If the content of the crosslinking agent is less than 10 parts by weight or the content of the crosslinking density auxiliary resin is less than 10 parts by weight, the coating property of the composition for a hard mask of the present invention is not only lowered, but a photoresist film is formed on the hard mask film. There is a disadvantage in that the hard mask film is dissolved in the photoresist solvent. On the other hand, when the content of the crosslinking agent exceeds 100 parts by weight, or the content of the crosslinking density auxiliary resin exceeds 50 parts by weight, the crosslinking density ratio in the composition is increased, and thus the process time is increased because the relative etching rate to the photoresist film is greatly reduced. Process efficiency is reduced.

The catalyst is a substance for obtaining a sufficient crosslinking density by activating a crosslinking reaction between compounds during a short bake time, and examples thereof include a thermal acid generator or a photoacid generator.

The thermal acid generator is not particularly limited as long as it is a material used as a conventional thermal acid generator, specifically, at least one compound selected from the group consisting of the following Chemical Formulas 3 and 4 is preferably used. In the embodiment of the present invention, 2-hydroxyhexyl paratoluenylsulfonate was used as the thermal acid generator.

(3)

[Formula 4]

또는

이며, n 은 0 또는 1이다.Wherein A is a functional group comprising a sulfonyl group, preferably

or

And n is 0 or 1.

The photoacid generator is phthalimido trifluoromethanesulfonate, dinitrobenzyltosylate, n-decyldisulfone, naphthylimidotrifluoromethanesulfonate, diphenylparamethoxyphenyl sulfonium triflate, diphenylpara Toluenyl sulfonium triplate, diphenylparaisobutylphenyl sulfonium triplate, triphenyl hexafluoro arsenate, triphenyl hexafluoro antimonate, triphenylsulfonium perfluorobutanesulfonate (Triphenylsulfonium perfluoro-1-butanesulfonate), triphenylsulfonium triflate or dibutylnaphthylsulfonium triflate.

 The content of the catalyst may be appropriately selected within a range capable of performing the catalyst function, for example, may be added in an amount of 0.1 to 10 parts by weight based on 100 parts by weight of the total compound for the hard mask. If the content of the catalyst exceeds 10 parts by weight, cracks occur in the hard mask film due to excessive crosslinking density, and defects occur in subsequent etching processes. On the other hand, when the content of the catalyst is less than 0.1 parts by weight, the cross-linking is not sufficiently formed in the hard mask composition of the present invention, the photoresist solvent to the inside of the hard mask film when the photoresist is coated on top of the hard mask film after coating Since the hard mask film is partially swelled while penetrating, a uniform hard mask film cannot be obtained. Therefore, a uniform pattern can be formed in a subsequent process.

The organic solvent is not particularly limited as long as it is an organic solvent used as a conventional photoresist composition solvent. For example, ethyl 3-ethoxypropionate, methyl 3-methoxypropionate, cyclohexanone, propylene glycol mono And at least one solvent from the group consisting of methyl ether acetate (PGMEA), 2-heptanone, tetrahydrofuran (THF) and ethyl lactate. The organic solvent may be included in an amount of 300 to 10,000 parts by weight based on 100 parts by weight of the compound for hard mask. When the content of the organic solvent exceeds 10,000 parts by weight, a hard mask film having a sufficient thickness may not be obtained. The mask film is formed thick, making it difficult to etch the pattern stably.

In the present invention,

Applying a composition for a hard mask according to the present invention on the etched layer of the semiconductor substrate;

Forming a hard mask film by performing a curing process on the composition for hard mask;

Forming a photoresist pattern on the hard mask layer;

Etching the hard mask layer using the photoresist pattern as an etching mask to form a hard mask pattern; And

And etching the etched layer using the hard mask pattern as an etch mask to form an etched layer pattern.

The etched layer may use an insulating film such as a silicon oxide film or an oxynitride film, and preferably a silicon oxide film.

In addition, in the method of the present invention, an amorphous carbon layer or a high carbon content polymer layer may be formed on the etched layer before coating the hard mask composition of the present invention in order to secure an etching selectivity with respect to the hard mask film. .

The hard mask composition coating process may be performed using a conventional photoresist film forming equipment. In addition, the hardening process for the hard mask composition is subjected to different exposure or baking process conditions depending on the type of catalyst included in the composition. That is, when the composition for a hard mask of the present invention is applied onto a wafer and a baking process or an exposure process is performed, an acid is generated from an acid catalyst included in the composition, and the compound, the crosslinking agent, and the crosslinking density auxiliary resin are present in the presence of the generated acid. A crosslinking reaction occurs in the liver to form a cured hardmask film that does not dissolve in the photoresist solvent.

The baking process is performed at 100 to 300 ° C. for 1 to 5 minutes, and the exposure process is performed at an exposure energy of 1 to 100 mJ / cm ² using ArF immersion scanner equipment. The hard mask film of the present invention can be easily removed by an ordinary removal step, for example, a removal step using thinner, alkali solvent or fluorine gas.

In addition, the photoresist pattern of the present invention is formed by applying a conventional lithography process, for example, a photoresist film for a short wavelength light source on top of a hard mask film, and then performing a dry or immersion lithography process. There is no special restriction. In this case, in the lithography process, an anti-reflection film may be further formed on the hard mask film before the photoresist film is formed.

The pattern forming method of the semiconductor device of the present invention is mainly applied to an ultrafine pattern forming process using an ArF light source, but an ultrafine pattern forming performed using KrF, VUV, EUV, E-beam, X-ray or ion beam. It can also be applied to processes.

In addition, the present invention provides a semiconductor device manufactured by the method for manufacturing a semiconductor device including the pattern forming method.

As described above, in the present invention, a crosslinking bond between a resin containing a benzene ring compound having a high light absorption at a short wavelength region and an organic-inorganic polymer compound containing a hydrocarbon and a silicon is formed on the etched layer before application of the photoresist film. By forming a hard mask film having excellent etching resistance, the etching selectivity of the photoresist pattern with respect to the etched layer can be ensured. Furthermore, since the hard mask film of the present invention can be formed by a general spin coating method, the conventional multilayer mask film deposition step can be simplified in the processing step, thereby reducing the manufacturing cost due to the process time, the deposition process equipment, and the material for deposition. Can be. Furthermore, the hard mask film of the present invention contains a compound having a benzene structure, and thus can effectively remove diffuse reflection light and standing waves generated in the lower layer of the photoresist during the exposure process, and thus can also serve as an antireflection film.

Hereinafter, the pattern forming method of the semiconductor device of the present invention will be described in more detail with reference to the drawings.

Referring to FIG. 2A, an etching target layer 23 is formed on the substrate 21.

The etched layer is formed using an oxynitride film or an oxide film,

Subsequently, the hard mask composition of the present invention is coated on the etched layer 23, and then a hard mask film 25 is formed by performing a curing process by exposure or baking. In this case, an amorphous carbon layer or a polymer layer having a high carbon content may be further formed on the etched layer before the hard mask layer is formed.

The hard mask composition may be a compound of formula 1a having a linear structure in which crosslinking is advantageous, O-cresol novolac epoxy resin as a crosslinking agent, poly (4-hydroxystyrene) as a crosslinking density auxiliary resin, and 2-hydroxy as a thermal acid generator. Oxyhexylparatoluenylsulfonate and propyleneglycol motomethylether acetate as an organic solvent.

[Formula 1a]

Wherein R ₁ is C ₁ -C ₁₀ straight or branched alkyl, n is 4-6.

The baking process is performed at 100 to 300 ° C. for 1 to 5 minutes, and the crosslinking density is higher in the hard mask film by the acid generated from the thermal acid generator during the baking process. The hard mask film is formed to a thickness of about 100 to 1500 nm.

Next, a conventional chemically amplified photoresist composition is coated on the hard mask layer 25 and then baked to form a photoresist layer 27.

The photoresist film is formed to a thickness of 100 to 2000nm.

The photoresist pattern 27-1 is formed by performing the exposure and development processes on the photoresist layer 27 of FIG. 2A, and the hard mask layer 25 is formed using the photoresist pattern 27-1 as an etching mask. ), The hard mask layer pattern 25-1 is formed as shown in FIG. 2B.

An etching process is performed on the etched layer 23 by using the pattern on which the photoresist pattern 27-1 and the hard mask pattern 25-1 of FIG. 2B are stacked as an etching mask, as shown in FIG. 2C. The etching target layer pattern 23-1 is formed.

In this case, each of the etching process is O ₂ , Cl ₂ , Ar, N ₂ O ₂ , CF ₄ And C ₂ F ₆ Using one or more gases selected from the group consisting of, the power (power) can be applied in a variety of ways depending on the etching equipment, gas or process type used. Specifically, the hard mask film etching process may be performed under conditions of 80 to 1000 W of RF power and 0 to 300 W of bias power while using CF ₄ , O _2, and a mixed etching gas thereof. Do.

Subsequently, the photoresist pattern 27-1 and the hard mask pattern 25-1 remaining after the etching process are removed by a removal process using a general thinner composition, an alkali solvent, or fluorine gas. As a result, as shown in FIG. 2D, a uniform etching layer pattern 23-1 may be formed on the substrate 21.

As described above, the present invention simplifies and manufactures the hard mask film forming process step by forming a hard mask film having a single layer structure having excellent etching resistance by using a composition for a hard mask including a compound having a linear structure having a crosslinking advantage. You can increase your production efficiency by reducing your process time and costs.

1 is an NMR graph of a polymer of Formula 1a prepared in the present invention.
2A to 2D are process schematic diagrams showing a pattern formation method of the present invention.
3A and 3B are electron microscope (SEM) photographs for etching amount measurement of Experimental Example 1. FIG.
4A and 4B are SEM photographs of the pattern formation method of Example 3. FIG.

Hereinafter, the present invention will be described in detail by way of examples. However, the following examples are only for illustrating the present invention, and the content of the present invention is not limited by the following examples.

I. Preparation of the composition for hard mask of the present invention

Preparation Example 1

2,2-bis hydroxymethyl propionic acid (CAS NO. 4767-03-7) (10 g) and 2,2-dimethoxypropane (CAS NO. 77-76-9) (13.8 ml), para toluenesulfonic acid mono Hydrate (CAS NO. 6192-525) (0.71 g) was added to acetone (100 ml) and stirred at room temperature for 2 hours. After neutralizing the catalyst with NH ₃ / EtOH solution, the solvent was removed using a rotary concentrator. The remaining solution was washed again with methylene chloride and distilled water to obtain an acetonide-2,2-bis (methoxy) propionic acid compound dissolved in an organic solvent.

Example 1

Silanol terminated polydiphenylsiloxane (manufactured by JSI Silicone) (3.0 g) and Acetonide-2,2-bis (methoxy) propionic anhydride (7.0 g) of Preparation Example 1 , Dimethylaminopyridine (0.3 g) and pyridine (6.4 g) were added to methylene chloride (50 ml), followed by stirring at room temperature for 12 hours. Distilled water (200 ml) was added to the obtained mixed solution, and the reaction was terminated. The resulting product was washed sequentially with 10% NaHSO ₄ (500 ml), 10% Na ₂ CO ₃ (500 ml) and brine (brine, NaCl) (500 ml), followed by filtration and drying to obtain the protected primary compound.

Subsequently, the primary compound (3.0 g) and the ion exchange resin (DOWEX 50W-X2, Sigma-Aldrich, CAS NO.69011-20-7) (3.0 g) were added to methanol (50 ml) for 12 hours at 50 ° C. After stirring, the mixture was passed through a celite filter. The filtered solution was filtered and dried to obtain an organic-inorganic polymer compound of formula 1a having four purified hydroxyl groups (Mw. 1191.74 to 1588.34) (see NMR in FIG. 1).

Example 2

Compound (8 g), Poly (4-hydroxystyrene) (CAS No. 24979-70-2) (2 g), and Tetramethoxymethylglycouril (CAS No. 17464-88-9) (1.5) g) and triphenylsulfonium perfluoro butanesulfonate (CAS No.144317-44-2) (0.5 g) were dissolved in tetrahydrofuran (THF) (60 g) and passed through a 0.2 μm fine filter. The hardmask composition of the invention was prepared.

II. Etch selectivity test for the hard mask film of the present invention

Experimental Example 1

Using a spin coating process, the hard mask composition of Example 2 and the photoresist composition (MicroChem, SU-8 2002) were respectively applied on the silicon wafer, and then baked at 150 ° C. for 90 seconds. The hard mask film and the photoresist film of the present invention were formed.

RF power of about 150 W and about 150 W using an etching gas in which CF ₄ , O _2, and CF ₄ and O ₂ were mixed at a ratio of 7: 7, 4:10, and 10: 4 to the hard mask film and the photoresist film. The etching process was performed for 20 seconds under 20W bias power conditions. Etch amounts of the hard mask film (see FIG. 3A) and the photoresist film (see FIG. 3B) for each etching gas are shown in Table 1 below.

Etch amount (nm / 20sec) Gas used Photoresist film
(SU-8 2002) Of the present invention
Hard mask Etch selectivity of hard mask film to photoresist film First thickness 2004nm 981.3 nm - CF ₄ 94 287 3.05 O ₂ 152 175 1.10 CF ₄ / O ₂ (7: 7) 211 162 0.70 CF ₄ / O ₂ (4:10) 797 500 0.62 CF ₄ / O ₂ (10: 4) 94 403 4.28

In the case of the amorphous carbon layer used as a conventional hard mask film, deposition is difficult, and the etching rate is similar to that of the photoresist film, and thus it is difficult to secure an etching selectivity of the photoresist film with respect to the etching layer. On the contrary, as shown in Table 1, the hard mask film of the present invention has the etching rate of most etching gases, particularly CF ₄ etching gas and CF ₄ / O ₂ mixed etching gas (10: 4), as compared with the photoresist film. Since it is about 3 times higher, the etching selectivity of the photoresist pattern with respect to the layer to be etched can be secured. Therefore, the hard mask film of the present invention is suitable for use as a mask film applied between the etched layer and the photoresist film.

On the other hand, when the CF ₄ / O ₂ mixed etching gas (7: 7 and 4:10) is used, the etching rate for the photoresist film is higher than that of the hard mask film, and among them, the CF ₄ / O ₂ mixed etching gas (4 : 10), the etching rate of the hard mask film as well as the photoresist film was very high. It was found that CF ₄ gas has a function of etching inorganic materials and at the same time breaks bonds of organic materials so that many organic materials can be etched at the same time.

III. Pattern Forming Method Using Hard Mask Film of the Present Invention

Example 3

A silicon oxide film was deposited on a hexamethyldisilazane (HMDS) treated silicon wafer as an etched layer, spin-coated the hardmask composition of Example 1 at a speed of 3000 rpm on the top, and then baked at 150 ° C. for 90 seconds to harden. A mask film was formed,

An antireflection film and a photoresist film (MicroChem, SU-8 2002) were coated on the hard mask layer to a thickness of 0.17 μm, baked at 150 ° C. for 90 seconds, and then used with an ArF scanner (NA = 0.85, ASML). It exposed and baked again at 150 degreeC for 90 second. After baking was completed, it was developed with a developer of MicroChem Corporation to form a photoresist pattern of 80 nm L / S (see FIG. 4A).

The hard mask is etched using the photoresist pattern as an etch mask to form a hard mask pattern (see FIG. 4B), and then the etching process is performed on the etched layer under the same etching process conditions while using the hard mask pattern as an etch mask. Was carried out to form a uniform 80 nm L / S fine etching layer pattern. The etching process was performed for 20 seconds under the condition that the CF ₄ / O ₂ gas was mixed in the ratio of 10: 4 with the etching gas and 150W of RF power and about 20W of bias power.

21: substrate
23: etching layer
23-1: Etch layer pattern
25: Hard Mask
25-1: Hardmask Pattern
27: photoresist film
27-1: photoresist pattern

Claims (22)

Compound for a hard mask, characterized in that represented by the formula (1):
[Formula 1]

Wherein R ₁ is C ₁ -C ₁₀ straight or branched alkyl, n is 4-6. The method according to claim 1,
The compound is a hard mask compound, characterized in that containing 15 to 45% of the silicon (Si) component relative to the total compound weight. The method according to claim 1,
The compound for a hard mask, characterized in that the compound has a molecular weight of 1,100 to 1,600. The method according to claim 1,
The compound of Formula 1 is a hard mask compound, characterized in that represented by the formula (1a):
[Formula 1a]

Wherein n is 4-6. A hard mask composition comprising a compound for a hard mask, a crosslinking agent, a crosslinking density auxiliary resin, a catalyst, and an organic solvent represented by the compound of Formula 1:
[Formula 1]

Wherein R ₁ is C ₁ -C ₁₀ straight or branched alkyl, n is 4-6. The method according to claim 5,
The compound of Formula 1 is a composition for a hard mask, characterized in that represented by the compound of Formula 1a:
[Formula 1a]

Wherein n is 4-6. The method according to claim 5,
The crosslinking agent is a hard mask composition, characterized in that the polymer compound having a molecular weight of 100 to 10,000 containing a methoxy or epoxy structure in the benzene ring or aliphatic ring backbone. The method according to claim 7,
The crosslinking agent is a tetramethoxy-methylglycouril resin or O-cresol novolac epoxy resin, the composition for a hard mask. The method according to claim 5,
The crosslinking agent is a hard mask composition, characterized in that contained in 10 to 100 parts by weight based on 100 parts by weight of the total compound for the hard mask. The method according to claim 5,
The crosslinking density auxiliary resin is a hard mask composition, characterized in that the polymer compound having a molecular weight of 100 to 5,000 containing a diol functional group in the benzene ring backbone. The method according to claim 10,
The crosslinking density auxiliary resin is a hard mask composition, characterized in that the poly (4-hydroxy styrene). The method according to claim 5,
The crosslinking density auxiliary resin is a hard mask composition, characterized in that contained in 10 to 50 parts by weight based on 100 parts by weight of the total compound for the hard mask. The method according to claim 5,
The catalyst is a hard mask composition, characterized in that the thermal acid generator or photoacid generator. The method according to claim 13,
The thermal acid generator composition for a hard mask, characterized in that selected from the group consisting of the following formula (3) and (4):
(3)

[Chemical Formula 4]

Wherein A is a functional group containing a sulfonyl group, and n is 0 or 1. The method according to claim 13,
The photoacid generator is phthalimido trifluoromethanesulfonate, dinitrobenzyltosylate, n-decyldisulfone, naphthylimidotrifluoromethanesulfonate, diphenylparamethoxyphenyl sulfonium triflate, diphenylpara Toluenyl sulfonium triplate, diphenylparaisobutylphenyl sulfonium triplate, triphenyl hexafluoro arsenate, triphenyl hexafluoro antimonate, triphenylsulfonium triflate or dibutylnaphthylsulfonium tri Hard mask composition, characterized in that the plate. The method according to claim 5,
The catalyst is a hard mask composition, characterized in that contained in 0.1 to 10 parts by weight based on 100 parts by weight of the total compound for the hard mask. The method according to claim 5,
The organic solvent is ethyl 3-ethoxypropionate, methyl 3-methoxypropionate, cyclohexanone, propylene glycol monomethyl ether acetate (PGMEA), tetrahydrofuran (THF), 2-heptanone and ethyl Hardmask composition, characterized in that at least one solvent selected from the group consisting of lactate. The method according to claim 5,
The organic solvent is a hard mask composition, characterized in that it comprises 500 to 10,000 parts by weight based on 100 parts by weight of the compound for the hard mask. Applying a composition for a hard mask of claim 5 on an etched layer of the substrate;
Forming a hard mask film by performing a curing process on the composition for hard mask;
Forming a photoresist pattern on the hard mask layer;
Etching the hard mask layer using the photoresist pattern as an etching mask to form a hard mask pattern; And
And etching the etched layer using the hard mask pattern as an etch mask to form an etched layer pattern. The method of claim 19,
The etching layer is a silicon oxide film or oxynitride film pattern forming method of a semiconductor device, characterized in that. The method of claim 19,
The method of forming a pattern of a semiconductor device, further comprising forming an amorphous carbon layer or a polymer layer having a high carbon content on the etched layer before coating the hard mask composition. The method of claim 19,
The hardening process is a pattern forming method of a semiconductor device, characterized in that performed by the exposure or baking process.

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