KR100725795B1 - Hardmask composition coated under photoresist and process of producing integrated circuit devices using thereof - Google Patents

Abstract

Provided are a hardmask composition for a resist underlayer film, which shows effective anti-reflection as well as optimizes the refractive index and adsorption of a hardmask, thereby ensuring margins in process of lithography, and a process for producing an integrated circuit device by using the same. The hardmask composition for a resist underlayer film comprises (a) a product which is a hydrolysate or condensate produced by mixing a compound represented by the formula(1) and a compound represented by the formula(2), (b) a polymer represented by the formula(3), (c) an acidic or basic catalyst, and (d) an organic solvent. In the formulae(1)-(3), n is 3-20, R is a monovalent organic group, m is an integer of 0-2, R1 is formula(a), formula(b) or formula(c), R2 and R3 is any one of hydrogen, a C1-C10 alkyl group, a C6-C10 aryl group and an allyl group, and each of a and b is 1-60.

Description

Hardmask composition for resist underlayer film and manufacturing method of semiconductor integrated circuit device using same {Hardmask Composition Coated under Photoresist And Process of producing Integrated Circuit devices using

The present invention relates to a hard mask composition for a resist underlayer film and a method for manufacturing a semiconductor integrated circuit device using the same. Specifically, the present invention relates to a developer film which is excellent in reproducibility of a pattern, good adhesion with a resist, and used after exposing the resist. The composition for underlayer film of the resist which is excellent in a resistance and is small in the film reduction at the time of oxygen ashing of a resist can be provided.

Most lithographic processes increase the resolution by using an antireflective coating material (ARC) to minimize the reflectivity between the imaging layer, such as a layer of resist material and the substrate. However, these ARC materials impose poor etch selectivity on the imaging layer due to the similar basic composition of the layers. Therefore, many imaging layers are also consumed during the etching of ARC after patterning, requiring further patterning during subsequent etching steps.

In addition, for some lithography techniques, the resist material used does not provide sufficient resistance to subsequent etching steps to effectively transfer the desired pattern to the layer underlying the resist material. In many cases, for example when extremely thin resist materials are used, when the substrate to be etched is thick, when substantial etch depth is required, it is desired to use a specific etchant for a given substrate layer, or In any combination of the above cases, a hard mask for resist underlayer film is used. The hard mask for the resist underlayer film serves as an intermediate layer between the patterned resist and the substrate to be patterned. The hard mask for resist underlayer film receives a pattern from the patterned resist layer and transfers the pattern to the substrate. The hard mask layer for the resist underlayer film must be able to withstand the etching process required to transfer the pattern.

For example, when processing a substrate such as a silicon oxide film, a resist pattern is used as a mask, but since the thickness of the resist is reduced along with miniaturization, it is difficult to process the oxide film without damaging the mask property of the resist. Therefore, the process of first transferring a resist pattern to the underlayer film for oxide film processing, and performing a dry etching process to an oxide film as a mask is taken. The underlayer film for oxide film processing means a film formed under the antireflection film while also serving as a lower reflection film. In this step, since the etching rate of the resist and the underlayer film for oxide film processing is similar, it is necessary to form a mask capable of processing the underlayer film between the resist and the underlayer film. That is, a multilayer film made of an oxide film processing underlayer film-underlayer film processing mask-resist is formed on the oxide film.

The refractive index and the absorbance of a suitable mask for lower layer film processing change according to the refractive index, absorbance, and thickness of the mask for oxide film processing formed under the mask for lower layer film processing.

The characteristics required for the mask for underlayer film processing include those capable of forming a resist pattern without hemming, etc., excellent adhesion to the resist, and those having sufficient mask property when processing the underlayer film for oxide film processing. It is difficult to find a material that meets all needs. In particular, the refractive index and the absorbance of the mask for the underlayer film processing is not appropriate, there is a problem that can not effectively use the anti-reflection characteristics and thus the lithography process margin is not secured.

The present invention provides a novel resist underlayer hard mask composition for overcoming the above-mentioned problems of the prior art and effectively using an antireflection property according to optimizing the refractive index and absorbance of the underlayer hard mask, thereby securing a lithography process margin. It aims to do it.

Therefore, in the present invention, (a) a product hydrolyzed or condensed by mixing the compound represented by the formula (1) and the compound represented by the formula (2);

(b) a polymer represented by Formula 3;

(c) acid or basic catalysts and

(d) A hard mask composition for resist underlayer films comprising an organic solvent is provided.

[Formula 1]

(n is 3 to 20)

[Formula 2]

(R represents a monovalent organic group and m is an integer of 0 to 2.)

[Formula 3]

,

또는

이고, R_{2 ,}R₃는 수소, C_{1 -10}의 알킬기, C_6-10의 아릴기 또는 알릴기 중 어느 하나이며, a, b 는 각각 1 내지 60.)Wherein R ₁ is

,

or

And, R _2, R ₃ is any one of hydrogen, an alkyl group of C _{1 -10,} C _6-10 aryl or allyl in a, a, b are each from 1 to 60.)

The basic catalyst is characterized in that any one selected from ammonium hydroxide represented by NH 4 OH or NR 4 OH (where R is a monovalent organic group).

The acid catalyst is p-toluenesulfonic acid mono hydrate, pyridine p-toluenesulfonic acid, 2,4,4,6-tetrabromocyclohexadienone, benzoin It is characterized in that it is any one selected from the group consisting of tosylate, 2-nitrobenzyl tosylate and other alkyl esters of organic sulfonic acid.

The hydrolyzate or condensation reaction product generated from the compound represented by Chemical Formula 1 and the compound represented by Chemical Formula 2 may be included in an amount of 1 to 50 wt% based on the total composition.

It is characterized in that the polymer represented by the formula (3) contained 1 to 30% by weight based on the total composition.

The hydrolyzate produced by mixing the compound represented by the formula (1) and the compound represented by the formula (2) has the structure of formula (4) and (5).

[Formula 4]

[Formula 5]

(R represents a monovalent organic group, m is an integer from 0 to 2.)

A condensation reaction product formed by mixing the compound represented by Formula 1 and the compound represented by Formula 2 has a structure of the following Formula 6.

[Formula 6]

 (In the above, R represents a monovalent organic group, x is 30 to 99 mol%, and y is 1 to 70 mol%.)

The hardmask composition is characterized in that it further comprises a crosslinking agent or a surfactant.

In the present invention, the following method for manufacturing a semiconductor integrated circuit device can be provided using the above-mentioned hard mask composition for resist underlayer film.

(a) providing a layer of material on the substrate;

(b) forming a hardmask layer of organic material over the material layer;

(c) forming an antireflective hardmask layer using the hardmask composition for a resist underlayer film according to any one of claims 1 to 8 over the material layer;

(d) forming a radiation-sensitive imaging layer over the antireflective hardmask layer;

(e) generating a pattern of radiation-exposed regions within the imaging layer by exposing the radiation-sensitive imaging layer to radiation in a patterned manner;

(f) selectively removing portions of the radiation-sensitive imaging layer and the antireflective hardmask layer to expose portions of the organic-containing hardmask material layer;

(g) selectively removing portions of the patterned antireflective hardmask layer and the organic-containing hardmask material layer to expose portions of the material layer; And

(h) forming a patterned material shape by etching the exposed portion of the material layer.

In addition, the present invention provides a semiconductor integrated circuit device formed by the above method.

Hereinafter, the present invention will be described in more detail.

The hard mask composition for a resist underlayer film of the present invention comprises a hydrolyzate or a condensation product formed by mixing a compound represented by Formula 1 and a compound represented by Formula 2, a polymer represented by Formula 3, an acid or basic catalyst, and an organic solvent. All.

[Formula 1]

(n is 3 to 20)

[Formula 2]

(R represents a monovalent organic group and m is an integer of 0 to 2.)

[Formula 3]

,

또는

이고, R_2,R₃는 수소, C_1-10의 알킬기, C_6-10의 아릴기 또는 알릴기 중 어느 하나이며, a, b 는 각각 1 내지 60.)Wherein R ₁ is

,

or

R _{2 and} R ₃ are hydrogen, an alkyl group of C _1-10 , an aryl group or allyl group of C _6-10 , and a and b are each 1 to 60.

The compound of Formula 1 may be a silicate (Silicate) of Mitsubishi's trade name MS51 (molecular weight 600) or MS56 (molecular weight 1200), it is possible to produce a resin for the present invention through hydrolysis and condensation reaction. By controlling the Si content, the etching selectivity between the upper photoresist layer and the hardmask layer consisting of the lower organic material can be imparted.

The compound of Formula 2 is phenyltrimethoxysilane. The phenyl group included in the present material provides a material having high anti-reflective properties by utilizing the point of absorption spectrum in the DUV region, and at the same time, adjusts the concentration ratio of the Ph-group to obtain a hard mask composition having a desired absorption and refractive index at a specific wavelength. Can provide.

The compound of formula 3 is an anthracene-containing polyhydroxystyrene polymer. Anthracene included in the present material not only exhibits an absorption spectrum in the DUV region, but may also provide an optimum refractive index and absorbance at a specific thickness depending on the amount of the present compound added.

The acid catalyst is p-toluenesulfonic acid mono hydrate, pyridine p-toluenesulfonic acid, 2,4,4,6-tetrabromocyclohexadienone, benzoin It is preferably one selected from the group consisting of tosylate, 2-nitrobenzyl tosylate and other alkyl esters of organic sulfonic acids.

The basic catalyst is preferably any one selected from ammonium hydroxides represented by NH 4 OH or NR 4 OH (wherein R is a monovalent organic group).

The acid catalyst or the basic catalyst can appropriately control the hydrolysis or condensation reaction in synthesizing the resin by adjusting the type, the amount and the method of addition.

In the present invention, the hard mask composition is preferably a polymer produced by the hydrolysis or condensation reaction of the compound of Formula 1 and the compound of Formula 2 under an acid or basic catalyst is 1 to 50% by weight based on the total composition, more preferably Preferably 1 to 30% by weight.

In the present invention, the polymer represented by Formula 3 includes 1 to 30% by weight based on the total composition.

In the present invention, the hydrolyzate produced from the compound represented by the formula (1) and the compound represented by the formula (2) preferably has the structures of the formulas (4) and (5).

[Formula 4]

[Formula 5]

(R represents a monovalent organic group, m is an integer from 0 to 2.)

    In addition, the condensation reaction generated from the compound represented by the formula (1) and the compound represented by the formula (2) preferably has a structure of the formula (6).

[Formula 6]

(In the above, R represents a monovalent organic group, x is 30 to 99 mol%, and y is 1 to 70 mol%.)

In the present invention, the composition may be provided that further comprises a crosslinking agent or a surfactant.

In addition, the present invention provides a method for preparing a substrate comprising: (a) providing a material layer on a substrate;

(b) forming a hardmask layer of organic material over the material layer;

(c) forming an antireflective hardmask layer using the hardmask composition for a resist underlayer film according to any one of claims 1 to 4 over the material layer;

(d) forming a radiation-sensitive imaging layer over the antireflective hardmask layer;

(e) generating a pattern of radiation-exposed regions within the imaging layer by exposing the radiation-sensitive imaging layer to radiation in a patterned manner;

(f) selectively removing portions of the radiation-sensitive imaging layer and the antireflective hardmask layer to expose portions of the organic-containing hardmask material layer;

(g) selectively removing portions of the patterned antireflective hardmask layer and the organic-containing hardmask material layer to expose portions of the material layer; And

(h) forming a patterned material shape by etching the exposed portion of the material layer.

The invention forms patterned material layer structures, such as metal wiring lines, contact holes or vias, insulation sections such as damask trench or shallow trench isolation, trenches for capacitor structures, such as those that may be used in the design of integrated circuit devices. Can be used to The invention is particularly useful with regard to forming patterned layers of oxides, nitrides, polysilicones and chromium.

In addition, the present invention provides a semiconductor integrated circuit device, which is formed by the above manufacturing method.

Hereinafter, the present invention will be described in more detail with reference to examples, but these examples are for illustrative purposes only and should not be construed as limiting the present invention.

Synthesis Example 1

In a 1 liter four-necked flask equipped with a mechanical stirrer, a cooling tube, a 1000 ml dropping funnel and a nitrogen gas introduction tube, 63.6 g of methyltrimethoxysilane and 56.4 g of methylsilicate (MS-56) were added to 269 g of PGMEA. After dissolution, the solution temperature was maintained at 60 ° C. Subsequently, 47.4 g of ion-exchanged water in which 1.2 g of p-toluenesulfonic acid monohydrate was dissolved was added to the solution over 1 hour. Then, after making it react for 4 hours at 60 degreeC, the reaction liquid was cooled to room temperature. The sample was obtained by removing the PGMEA solution containing 59.5g of methanol from this reaction liquid.

Synthesis Example 2

In a 1 liter four-necked flask equipped with a mechanical stirrer, a cooling tube, a 1000 ml dropping funnel and a nitrogen gas introduction tube, 29.6 g of methyltrimethoxysilane, 3.96 g of phenyltrimethoxysilane and methylsilicate 26.4 g of MS-56) was dissolved in 134.6 g of PGMEA, and the solution temperature was maintained at 60 degrees. Subsequently, 23.2 g of ion-exchanged water in which 0.6 g of p-toluenesulfonic acid monohydrate was dissolved was added to the solution over 1 hour. Then, after making it react for 4 hours at 60 degreeC, the reaction liquid was cooled to room temperature. The sample was obtained by removing the PGMEA solution containing 28.8g of methanol from this reaction liquid.

Synthesis Example 3

In a 1 liter four-necked flask equipped with a mechanical stirrer, a cooling tube, a 1000 ml dropping funnel and a nitrogen gas introduction tube, 48.0 g of methyltrimethoxysilane, 17.9 g of phenyltrimethoxysilane, and methylsilicate 54.1 g of MS-56) was dissolved in 269.2 g of PGMEA, and the solution temperature was maintained at 60 degrees. Subsequently, 47.4 g of ion-exchanged water in which 1.2 g of p-toluenesulfonic acid monohydrate was dissolved was added to the solution over 1 hour. Then, after making it react at 60 degree | times for 4 hours, the reaction liquid was cooled to room temperature. The PGMEA solution containing 47.4 g of methanol was removed from this reaction liquid, and the sample was obtained.

Synthesis Example 4

In a 1 L four-necked flask equipped with a mechanical stirrer, a cooling tube, a 1000 ml dropping funnel and a nitrogen gas introduction tube, 30.3 g of methyltrimethoxysilane, 1.5 g of propyltrimethoxysilane and methylsilicate After dissolving 28.2 g of MS-56 in 134 g of PGMEA, the solution temperature was maintained at 60 degrees. Subsequently, 23.2 g of ion-exchanged water in which 0.6 g of p-toluenesulfonic acid monohydrate was dissolved was added to the solution over 1 hour. Then, after making it react for 4 hours at 60 degreeC, the reaction liquid was cooled to room temperature. The sample was obtained by removing the PGMEA solution containing 31.3g of methanol from this reaction liquid.

Synthesis Example 5

1,4-bis (methoxymethyl) benzene with nitrogen gas flowing into a 1 liter four-necked flask equipped with a mechanical stirrer, a cooling tube, a 300 ml dropping funnel and a nitrogen gas introduction tube. ) Stir well with 8.31 g (0.05 mole), diethyl sulfate (0.154 g) and 200 g of γ-butyrolactone. After 10 minutes, a solution of 28.02 g (0.08 mol) of 4,4 '-(9-fluorenylidene) diphenol in 200 g of γ-butyrolactone was slowly added dropwise for 30 minutes, followed by reaction for 12 hours. . After completion of the reaction, the acid was removed using water, and then concentrated by an evaporator. It was then diluted with MAK and methanol and adjusted to a solution of 15 wt% MAK / methanol = 4/1 (weight ratio). The solution was placed in a 3 L separatory funnel, and n-heptane was added thereto to remove the low molecular weight containing the monomer to obtain the following phenol resin (Mw = 12,000, polydispersity = 2.0, n = 23).

Synthesis Example 6

10 g of anthracenemethyl propane sulfonated ester (APS), 30 g of polyhydroxystyrene (PHS), sodium hydride while introducing nitrogen gas into a 1 liter four-necked flask equipped with a mechanical stirrer, a cooling tube, and a nitrogen gas introduction tube. 2 g (NaH, 60%), tetrahydrofuran polyhydroxystyrene-co-anthraceneoxystyrene was prepared. After completion of the reaction, the reaction solution was precipitated dropwise into 8 L Hexane. The precipitated polymer was separated using a funnel and dried in a vacuum oven for 72 hours to obtain the desired polymer (Mw = 12,400, polydispersity = 2.4, n = 26).

Example 1

In 48.12 g of the solution prepared in Synthesis Example 1, 5 g of the polymer obtained in Synthesis Example 6 was dissolved, and 131 g of PGMEA and 70.5 g of cyclohexanone were added to form a dilute solution. 0.624 g of 10 wt% Pyridine solution (solvent PGMEA) was added to this solution to form a final sample solution.

Example 2

In 48.12 g of the solution prepared in Synthesis Example 2, 5 g of the polymer obtained in Synthesis Example 6 was dissolved, and 131 g of PGMEA and 70.5 g of cyclohexanone were added to make a dilute solution. 0.624 g of 10 wt% Pyridine solution (solvent PGMEA) was added to this solution to form a final sample solution.

Example 3

In 48.12 g of the solution prepared in Synthesis Example 3, 5 g of the polymer obtained in Synthesis Example 6 was dissolved, and 131 g of PGMEA and 70.5 g of cyclohexanone were added to form a dilute solution. 0.624 g of 10 wt% Pyridine solution (solvent PGMEA) was added to this solution to form a final sample solution.

Example 4

In 48.12 g of the solution prepared in Synthesis Example 4, 5 g of the polymer obtained in Synthesis Example 6 was dissolved, and 131 g of PGMEA and 70.5 g of cyclohexanone were added to form a dilute solution. 0.624 g of 10 wt% Pyridine solution (solvent PGMEA) was added to this solution to form a final sample solution.

Comparative Example 1

0.8 g of the polymer prepared in Synthesis Example 6 and 0.2 g of a crosslinking agent (Powderlink 1174), which is composed of the following structural units, and 2 mg of pyridinium P-toluene sulfonate were dissolved in PGMEA 9 g. Filtration made the following sample solution.

Powderlink 1174 structure

Comparative Example 2

In 48.12 g of the solution prepared in Synthesis Example 1, 131 g of PGMEA and 70.5 g of cyclohexanone were added to form a dilute solution. 0.624 g of 10 wt% Pyridine solution (solvent PGMEA) was added to this solution to form a final sample solution.

Comparative Example 3

In 48.12 g of the solution prepared in Synthesis Example 2, 131 g of PGMEA and 70.5 g of cyclohexanone were added to form a dilute solution. 0.624 g of 10 wt% Pyridine solution (solvent PGMEA) was added to this solution to form a final sample solution.

[Comparative Example 4]

In 49.10 g of the solution prepared in Synthesis Example 3, 130 g of PGMEA and 70.5 g of cyclohexanone were added to form a dilute solution. 0.624 g of 10 wt% Pyridine solution (solvent PGMEA) was added to this solution to form a final sample solution.

[Comparative Example 5]

In 47.34 g of the solution prepared in Synthesis Example 4, 132 g of PGMEA and 70.5 g of cyclohexanone were added to form a dilute solution. 0.624 g of 10 wt% Pyridine solution (solvent PGMEA) was added to this solution to form a final sample solution.

The samples made in Example 1-4 and Comparative Example 1-5 were coated on a silicon wafer by spin-coating to bake at 200 ° C. for 60 seconds to form a film having a thickness of 1000 Å.

The refractive index n and extinction coefficient k for the films were obtained. The instrument used was Ellipsometer (J. A. Woollam) and the measurement results are shown in Table 1.

Sample used to make film Optical properties (193nm) Optical properties (248nm) n (refractive index) k (absorption coefficient) n (refractive index) k (absorption coefficient) Example 1 1.63 0.29 1.59 0.21 Example 2 1.63 0.36 1.62 0.19 Example 3 1.72 0.36 1.63 0.17 Example 4 1.66 0.30 1.57 0.24 Comparative Example 1 1.65 0.11 1.40 0.51 Comparative Example 2 1.56 0.02 1.49 0.00 Comparative Example 3 1.57 0.12 1.47 0.00 Comparative Example 4 1.70 0.23 1.55 0.00 Comparative Example 5 1.56 0.02 1.49 0.00

   0.8 g of the polymer produced in Synthesis Example 5 and 0.2 g of a crosslinking agent (Powderlink 1174), which is composed of the following structural units, and 2 mg of pyridinium P-toluene sulfonate were dissolved in PGMEA 9 g. Filtration made a sample solution.

   The sample was coated on a silicon wafer by spin-coating to bake at 200 ° C. for 60 seconds to form a film having a thickness of 5000 mm 3.

   Samples made in Examples 1-4 and Comparative Examples 2-5 were coated on the wafer thus prepared by spin-coating to bake at 200 ° C. for 60 seconds to form a film having a thickness of 1500 Å. A photoresist for KrF was coated on the prepared film, baked at 110 ° C. for 60 seconds, exposed to light using an exposure equipment of ASML (XT: 1400, NA 0.93), and developed with TMAH (2.38 wt% aqueous solution). And using a FE-SEM to examine the line and space (line and space) pattern of 90nm as shown in Table 2 below. The exposure latitude (EL) margin according to the change of the exposure dose and the depth of focus (DoF) margin according to the distance change with the light source are considered and recorded in Table 2.

Sample used to make film Pattern EL margin (△ mJ / exposure energy mJ) DoF margin (μm) Example 1 3 0.2 Example 2 3 0.2 Example 3 3 0.2 Example 4 3 0.2 Comparative Example 2 2 0.2 Comparative Example 3 One 0.1 Comparative Example 4 2 0.2 Comparative Example 5 2 0.2

A patterned specimen by CHF ₃ / CF _4, using a gas mixture the progress of dry etching, followed by including the oxygen CHF ₃ / CF ₄ used a mixed gas proceeding dry etching back, and then, finally, BCl ₃ / Cl ₂ Dry etching was performed using the mixed gas. Finally, after removing all remaining organics using O ₂ gas, the cross section was examined by FE SEM and the results are listed in Table 3.

Sample used to make film Pattern shape after etching Example 1 Vertical shape Example 2 Vertical shape Example 3 Vertical shape Example 4 Vertical shape Comparative Example 2 Vertical shape Comparative Example 3 Slightly tapered shape Comparative Example 4 Vertical shape Comparative Example 5 Slightly tapered shape

0.8 g of the polymer produced in Synthesis Example 5 and 0.2 g of a crosslinking agent (Powderlink 1174), which is composed of the following structural units, and 2 mg of pyridinium P-toluene sulfonate were dissolved in PGMEA 9 g. Filtration made a sample solution. The sample was coated on a silicon wafer by spin-coating to bake at 200 ° C. for 60 seconds to form a film having a thickness of 5000 mm 3. Samples made in Examples 1-4 and Comparative Examples 2-5 were coated on the wafer thus prepared by spin-coating to bake at 200 ° C. for 60 seconds to form a film having a thickness of 1500 Å. The ArF photoresist was coated on the prepared film, baked at 110 ° C. for 60 seconds, exposed to light using an ArF exposure equipment, ASML1250 (FN70 5.0 active, NA 0.82), and developed with TMAH (2.38 wt% aqueous solution). And using a FE-SEM to examine the line and space (line and space) pattern of 80nm as shown in Table 4 below. The exposure latitude (EL) margin according to the change in the exposure dose and the depth of focus (DoF) margin according to the distance change with the light source were considered and recorded in Table 4.

Sample used to make film Pattern EL margin (△ mJ / exposure energy mJ) DoF margin (μm) Example 1 3 0.2 Example 2 3 0.2 Example 3 3 0.2 Example 4 3 0.2 Comparative Example 2 One 0.1 Comparative Example 3 2 0.2 Comparative Example 4 2 0.2 Comparative Example 5 One 0.1

The patterned specimens of Table ₄ CHF ₃ / CF 4 with a mixed gas proceeds to dry etching, and then proceeds to dry etching again using a CHF ₃ / CF ₄ gas mixture containing oxygen, and then, CHF ₃ / Dry etching was again performed using a CF ₄ mixed gas. Finally, after removing all remaining organics using O ₂ gas, the cross section was examined by FE SEM and the results are listed in Table 5.

Sample used to make film Pattern shape after etching Example 1 Vertical shape Example 2 Vertical shape Example 3 Vertical shape Example 4 Vertical shape Comparative Example 2 Slightly tapered shape Comparative Example 3 Vertical shape Comparative Example 4 Vertical shape Comparative Example 5 Slightly tapered shape

The present invention can provide a hard resist composition for a resist underlayer film that can secure a lithography process margin by effectively using antireflection properties by optimizing the refractive index and absorbance of the underlayer hard mask.

Claims (10)

(a) a product hydrolyzed or condensed by mixing a compound represented by Formula 1 with a compound represented by Formula 2; (b) a polymer represented by Formula 3; (c) acid or basic catalysts and (d) A hard mask composition for resist underlayer film, comprising an organic solvent. [Formula 1]

(n is 3 to 20) [Formula 2]

(R represents a monovalent organic group and m is an integer of 0 to 2.) [Formula 3]

Wherein R ₁ is

,

or

R _{2 and} R ₃ are hydrogen, an alkyl group of C _1-10 , an aryl group or allyl group of C _6-10 , and a and b are each 1 to 60. The hard base for resist underlayer films according to claim 1, wherein the basic catalyst is any one selected from ammonium hydroxide represented by NH ₄ OH or NR ₄ OH (where R is a monovalent organic group). Mask composition. The method of claim 1, wherein the acid catalyst is p-toluenesulfonic acid mono hydrate (p-toluenesulfonic acid mono hydrate), pyridine p-toluenesulfonic acid, 2,4,4,6-tetrabromocyclo Hard mask composition for a resist underlayer film, characterized in that any one selected from the group consisting of hexadienone, benzoin tosylate, 2-nitrobenzyl tosylate and other alkyl esters of organic sulfonic acid. The hard mask composition for a resist underlayer film of claim 1, wherein 1 to 50% by weight of the hydrolyzate or condensation product generated from the compound represented by Formula 1 and the compound represented by Formula 2 is included. According to claim 1, wherein the polymer represented by the formula (3) relative to the total composition Hard mask composition for a resist underlayer film comprising 1 to 30% by weight. The hard mask composition for a resist underlayer film according to claim 1, wherein the hydrolyzate produced by mixing the compound represented by Chemical Formula 1 and the compound represented by Chemical Formula 2 has the structures of Chemical Formula 4 and Chemical Formula 5. [Formula 4]

[Formula 5]

(R represents a monovalent organic group, m is an integer from 0 to 2.) The hard mask composition for a resist underlayer film of claim 1, wherein the condensation reactant formed by mixing the compound represented by Chemical Formula 1 and the compound represented by Chemical Formula 2 has a structure represented by Chemical Formula 6. [Formula 6]

 (In the above, R represents a monovalent organic group, x is 30 to 99 mol%, and y is 1 to 70 mol%.) The hard mask composition for a resist underlayer film of claim 1, wherein the hard mask composition further comprises a crosslinking agent or a surfactant. (a) providing a layer of material on the substrate; (b) forming a hardmask layer of organic material over the material layer; (c) forming an antireflective hardmask layer using the hardmask composition for a resist underlayer film according to any one of claims 1 to 8 over the material layer; (d) forming a radiation-sensitive imaging layer over the antireflective hardmask layer; (e) generating a pattern of radiation-exposed regions within the imaging layer by exposing the radiation-sensitive imaging layer to radiation in a patterned manner; (f) selectively removing portions of the radiation-sensitive imaging layer and the antireflective hardmask layer to expose portions of the organic-containing hardmask material layer; (g) selectively removing portions of the patterned antireflective hardmask layer and the organic-containing hardmask material layer to expose portions of the material layer; And (h) forming a patterned material shape by etching the exposed portion of the material layer. A semiconductor integrated circuit device formed by the method of claim 9.