KR20110112723A - Cutting mask for forming an active having diagonal structure - Google Patents

Cutting mask for forming an active having diagonal structure Download PDF

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Publication number
KR20110112723A
KR20110112723A KR1020100032009A KR20100032009A KR20110112723A KR 20110112723 A KR20110112723 A KR 20110112723A KR 1020100032009 A KR1020100032009 A KR 1020100032009A KR 20100032009 A KR20100032009 A KR 20100032009A KR 20110112723 A KR20110112723 A KR 20110112723A
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KR
South Korea
Prior art keywords
area
light
cutting mask
active pattern
active
Prior art date
Application number
KR1020100032009A
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Korean (ko)
Inventor
공동호
조병호
Original Assignee
주식회사 하이닉스반도체
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Priority to KR1020100032009A priority Critical patent/KR20110112723A/en
Publication of KR20110112723A publication Critical patent/KR20110112723A/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

A cutting mask according to an embodiment of the present invention is a cutting mask for separating an active pattern extending in an oblique direction from each other, the main light transmitting area corresponding to an area to be removed for separation of an active pattern; It includes a light-transmitting area consisting of auxiliary light-transmitting areas extending in opposite directions parallel to the diagonal direction at both ends of the main light-transmitting area, and the light-shielding area surrounding the light-transmitting area.

Description

Cutting mask for forming an active having diagonal structure

The present invention relates to a photomask for manufacturing a semiconductor device, and more particularly to a cutting mask for the active formation of the diagonal structure.

As demand for increasing the capacity of semiconductor memory devices increases, interest in increasing the degree of integration continues to increase. Efforts are being made to form more memory cells on one wafer by reducing the size of the chip or changing the cell structure to increase device integration. In order to increase the degree of integration by changing the cell structure, there is a method of changing the planar arrangement of the active regions or changing the cell layout. As part of this attempt, there is a method of changing the layout of the active area from the 8F2 layout to the 6F2 layout. In general, an element having a 6F2 layout has a length of 3F in the length of the bit line and a length of 2F in the length of the word line. For this purpose, the active region has a diagonal structure in which the long axis is arranged obliquely, rather than in the horizontal direction. .

However, the development speed of the process technology for forming a pattern, in particular, lithography technology, is slower than the speed at which the integration of the device increases. Technology is being applied. That is, patterning for active formation is formed by a spacer patterning method. Accordingly, the active pattern is formed to extend in the diagonal direction. Therefore, a portion of the active pattern extending in the diagonal direction is removed by using a cutting mask to separate the active patterns connected to each other.

1 to 3 are diagrams for explaining the active formation process of the diagonal structure using such a cutting mask. First, as shown in FIG. 1, in a state in which an active pattern 110 connected in diagonal lines is formed by using a spacer patterning method, the active pattern (110 in FIG. 1) is oblique direction using the cutting mask 200 shown in FIG. 2. Separated from each other. The cutting mask 200 has a structure in which rectangular light-transmitting regions 210 corresponding to a region to be cut are disposed, and the light-shielding regions 220 surround the light-transmitting regions 210. As a result, as shown in FIG. 3, an active pattern 112 having a diagonal structure separated from each other in a diagonal direction is formed. For reference, the region 212 shown in dotted lines in FIG. 3 refers to a portion removed corresponding to the transmissive region 210 of the cutting mask 200, and reference numeral 120 denotes an element isolation surrounding the active pattern 112. It means an area.

However, in this process, as shown in FIG. 2, the cutting mask 200 may separate the light-transmitting area 210 of the hole pattern in order to separate the active patterns 110 (refer to FIG. 1) that are elongated in the diagonal direction. Have In general, the hole pattern is known to have a lower resolution when exposed to light than the line pattern. Accordingly, the CDs (CD) of the active patterns (112 in FIG. 3), which are separated from each other in the diagonal direction, in particular the CDs in the long axis direction are not constant, so that they are appropriately matched with storage nodes or bit lines in subsequent processes. An area that cannot be contacted may occur.

The problem to be solved by the present invention is to improve the device characteristics by increasing the resolution of the hole pattern to improve the CD uniformity in the long axis direction of the active pattern, in particular in the subsequent process by maximally increasing the length of the active pattern in the long axis direction It is to provide a cutting mask that can increase the contact margin of.

The cutting mask according to an embodiment of the present invention, in the cutting mask for separating the active pattern extending in the diagonal direction from each other, the main light-transmitting area corresponding to the area to be removed for separation of the active pattern, the main light-transmitting area A light-transmitting area consisting of auxiliary light-transmitting areas extending parallel to the oblique direction but opposite to each other at the both ends of, and a light-shielding area surrounding the light-transmitting area.

In one example, the active pattern constitutes a 6F2 size cell.

In one example, the light transmitting area is an exposed portion of the light transmitting substrate.

In one example, the light blocking area is a portion in which a chrome film pattern is disposed on the light transmitting substrate.

In another example, the light blocking region may be a portion in which a phase inversion film pattern is disposed on the light transmitting substrate.

In one example, the main light-transmitting region has a shape close to the ellipse shape.

In this case, the long axis of the elliptic shape is disposed in a direction perpendicular to the diagonal direction in which the active pattern extends.

According to the present invention, by forming additional light-transmitting regions at both ends of the hole pattern to increase the light of the light to be transmitted, the resolution at the time of exposure can be increased, thereby improving the CD uniformity in the long axis direction of the active pattern, As a result, device characteristics can be improved. In addition, the cutting region is formed in an ellipse shape in which the major axis is positioned in the direction perpendicular to the diagonal direction, thereby increasing the length of the active pattern in the major axis direction to the maximum, thereby increasing the contact margin in subsequent processes. .

1 to 3 are diagrams for explaining the active formation process of the diagonal structure using such a cutting mask.
4 is a layout diagram illustrating a cutting mask for the active formation of the diagonal structure according to the present invention.
FIG. 5 is a diagram illustrating the light transmitting region of FIG. 4 in more detail.
FIG. 6 is a diagram illustrating an active pattern of a diagonal structure formed using the cutting mask of FIG. 4.
7 and 8 are graphs shown for comparing the resolution of the cutting mask according to the present invention with the conventional case.

4 is a layout diagram illustrating a cutting mask for the active formation of the diagonal structure according to the present invention. 5 is a view illustrating the light transmitting region of FIG. 4 in more detail. 4 and 5, the cutting mask 400 according to an exemplary embodiment of the present invention includes a light transmitting area 420 and a light blocking area 430 surrounding the light transmitting area 420. The transmissive area 420 is a region through which light is transmitted during exposure, and is a portion where one surface of the transmissive substrate is exposed. The light shielding region 430 is a region in which light cannot be transmitted during exposure. In the binary form, a light shielding film pattern such as a chromium (Cr) film is disposed. In the case of a phase inversion, a molybdenum silicon (MoSi) film is used. This is a portion in which the phase shift film pattern is disposed.

The light transmitting region 420 is a region through which light is transmitted in order to separate the active patterns formed on the wafer in a diagonal direction from each other in a diagonal direction. As illustrated in FIG. 5, the main light transmitting region 421 and the auxiliary light transmitting region ( 422). The main light transmitting area 421 corresponds to an area removed for separation of the active pattern and has a shape close to an ellipse. Although it is ideal to have an elliptic shape, it is known that it is difficult to implement an elliptic pattern in the photomask. Therefore, the main light-transmitting region 421 is formed to be as close as possible to the ellipse shape even if it is not an ideal ellipse shape. In this case, the long axis of the ellipse is formed in a direction perpendicular to the diagonal direction in which the active pattern is disposed, and the short axis is formed in a direction parallel to the diagonal direction in which the active pattern is disposed. The auxiliary transmissive area 422 is formed to extend by a predetermined length in the diagonal direction at both ends of the long axis of the main transmissive area 421, so that the extending directions are opposite to each other. The size of the auxiliary light-transmitting region 422 increases the amount of light passing through the main light-transmitting region 421 of the cutting mask 400 so as to have an appropriate size so as not to be transferred onto the wafer.

FIG. 6 is a diagram illustrating an active pattern of a diagonal structure formed using the cutting mask of FIG. 4. Referring to FIG. 6, when the exposure and development are performed using the cutting mask 400 of FIG. 4, a photoresist film pattern (not shown) having an opening 622 shown in a dotted line in the drawing is formed. Although not shown in the figure, the openings 622 expose areas to be removed for mutual separation of the active patterns 612. Subsequently, when etching is performed using the photoresist layer pattern as an etching mask, the exposed portion of the active pattern 612 is removed, thereby forming an active pattern 612 having a diagonal structure separated from each other in a diagonal direction as shown in the drawing. . The opening 622 of the photoresist film pattern formed using the cutting mask 400 is formed in an ellipse shape in which a long axis is formed in a direction perpendicular to the diagonal direction in which the active pattern 612 extends, and thus the active pattern 612. The length of the removed part corresponds to the length of the short axis of the ellipse shape. Accordingly, the length of the portion of the active pattern 612 removed for mutual separation is shorter than that of the circular opening, and the length of the active pattern 612 separated from each other is further extended. In FIG. 6, reference numeral 620 denotes an isolation region surrounding the active pattern 612.

7 and 8 are graphs shown for comparing the resolution of the cutting mask according to the present invention with the conventional case. 7 and 8, the horizontal axis represents the pattern pitch, and the vertical axis represents the intensity of light passing through the light transmitting region of the cutting mask. First, as shown by the line 710 in FIG. 7, in the conventional case, the deviation between the maximum value and the minimum value of the light intensity is large in the area "A", but the variation between the maximum value and the minimum value of the light intensity is shown in the "B" area. Appears small. That is, although the resolution in the "A" area is secured to some extent, the resolution in the "B" area is greatly reduced. Accordingly, it can be seen that the CD is not uniform depending on the position on the wafer. On the other hand, as shown by the line 720 in Fig. 8, when using the cutting mask according to the present embodiment, the deviation between the maximum value and the minimum value of the light intensity is sufficiently large in a constant size in all areas. Therefore, it can be seen that high resolution can be obtained at all positions on the wafer, and that even CD (CD) uniformity can be secured because there is almost no variation in resolution. This is because the light transmitting region 420 of the cutting mask 400 according to the present embodiment is composed of a main light transmitting region 421 and an auxiliary light transmitting region 422, thereby transmitting the light transmitting region 420 of the cutting mask 400. This is because the amount of light irradiated on the wafer is increased. In some cases, a curing process is performed after coating a RELACS (Resolution Enhancement Lithography Assisted by Chemical Shrink) material film on the photoresist film pattern to control CD, or a conventional reflow process. You can also do

400 ... cutting mask 420 ... light emitting area
421 Main floodlight 422 Secondary floodlight
430 ... Shading 612 ... Active Pattern
620 element isolation area 622 opening

Claims (7)

In the cutting mask for separating the active pattern extending in the diagonal direction from each other,
A transmissive area including a main transmissive area corresponding to an area to be removed for separation of the active pattern, and auxiliary transmissive areas extending in diagonal directions opposite to the diagonal directions but opposite to each other at both ends of the main transmissive area; And
And a light shielding area surrounding the light transmitting area. The method of claim 1,
The active pattern is a cutting mask constituting a cell of a size 6F2. The method of claim 1,
And the light transmitting area is an exposed portion of the light transmitting substrate. The method of claim 1,
The light blocking area is a cutting mask in which a chromium film pattern is disposed on a light transmitting substrate. The method of claim 1,
The light blocking area is a cutting mask in which a phase inversion film pattern is disposed on a light transmitting substrate. The method of claim 1,
The main transmissive area is a cutting mask having a shape close to the ellipse shape. The method of claim 6,
The long axis of the elliptic shape is a cutting mask disposed in a direction perpendicular to the diagonal direction in which the active pattern extends.
KR1020100032009A 2010-04-07 2010-04-07 Cutting mask for forming an active having diagonal structure KR20110112723A (en)

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KR1020100032009A KR20110112723A (en) 2010-04-07 2010-04-07 Cutting mask for forming an active having diagonal structure

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103226292A (en) * 2012-01-31 2013-07-31 佳能株式会社 Drawing method and method of manufacturing article
US8729675B1 (en) 2012-10-26 2014-05-20 Samsung Electronics Co., Ltd. Semiconductor device having line-type trench to define active region and method of forming the same
CN112864152A (en) * 2019-11-26 2021-05-28 长鑫存储技术有限公司 Memory, substrate structure of memory and preparation method of substrate structure

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103226292A (en) * 2012-01-31 2013-07-31 佳能株式会社 Drawing method and method of manufacturing article
TWI483290B (en) * 2012-01-31 2015-05-01 Canon Kk Drawing method and method of manufacturing article
US9690201B2 (en) 2012-01-31 2017-06-27 Canon Kabushiki Kaisha Drawing method and method of manufacturing article
US8729675B1 (en) 2012-10-26 2014-05-20 Samsung Electronics Co., Ltd. Semiconductor device having line-type trench to define active region and method of forming the same
CN112864152A (en) * 2019-11-26 2021-05-28 长鑫存储技术有限公司 Memory, substrate structure of memory and preparation method of substrate structure
CN112864152B (en) * 2019-11-26 2022-06-24 长鑫存储技术有限公司 Memory, substrate structure of memory and preparation method of substrate structure
US12014932B2 (en) 2019-11-26 2024-06-18 Changxin Memory Technologies, Inc. Memory, substrate structure of the memory, and method for preparing the substrate structure of the memory

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