KR20110089500A - Method for manufacturing led package - Google Patents

Method for manufacturing led package Download PDF

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Publication number
KR20110089500A
KR20110089500A KR1020100008934A KR20100008934A KR20110089500A KR 20110089500 A KR20110089500 A KR 20110089500A KR 1020100008934 A KR1020100008934 A KR 1020100008934A KR 20100008934 A KR20100008934 A KR 20100008934A KR 20110089500 A KR20110089500 A KR 20110089500A
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KR
South Korea
Prior art keywords
led
oxide film
led package
led chip
lens
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KR1020100008934A
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Korean (ko)
Inventor
김영신
김진하
조영진
이재희
Original Assignee
삼성엘이디 주식회사
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Priority to KR1020100008934A priority Critical patent/KR20110089500A/en
Publication of KR20110089500A publication Critical patent/KR20110089500A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

PURPOSE: An LED package manufacturing method is provided to improve mass productivity in the LED package manufacturing method. CONSTITUTION: An LED package manufacturing method is comprised of following steps. An LED chip is mounted on a base(S100). A fluorescent substance is formed on the LED chip(S200). An oxide film is deposited on the LED chip(S300). A part of the oxide film corresponding to the position and size of the LED chip is removed by etching(S400). A lens is formed by reflowing the oxide film(S500).

Description

ＬＥＤ패키지 제조방법{Method for Manufacturing LED Package}LED package manufacturing method {Method for Manufacturing LED Package}

본 발명은 LED패키지 제조방법에 관한 것이다.
The present invention relates to a LED package manufacturing method.

　친환경적인 제품으로　LED를 선호하면서　LED가 대중화 되는 추세이고, 빛의 퍼짐의 정도를 정확하게 조절하기 위해서 LED 위에 Lens를　붙이는 방식을 선호하고 있다. As an environmentally friendly product, 'LED' is being popularized, 'LED' is becoming popular, and in order to precisely control the degree of light spread, the 'lens' is attached to the LED.

종래 렌즈를 형성 방식을 살펴보면, 디스펜싱(dispensing) 방법, 인젝션(injection) 방식, 트랜스퍼 앤 콤프레션(transfer &　compression) 방법 등이 있다.A conventional method of forming a lens includes a dispensing method, an injection method, a transfer & compression method, and the like.

디스펜싱(dispensing) 방식은 렌즈 형상 조절이 어렵고, 시간이 오래 걸리는 단점이 있으며, 인젝션(injection) 방식은 LED 위에 실리콘 캡(cap)을 씌우고, 작은 구멍을 통해서 실리콘을 주입하여 캡을 채우는데, 기포 방지를 위해서 많은 양의 실리콘을 투입하여 실리콘 손실율이 높고, 시간도 오래 걸리는 단점이 있다. 그리고, 트랜스퍼 앤 콤프레션(transfer &　compression) 방식은 실리콘 들뜸이나 수지 흐름 등의 문제점 해결이 필요하였다.
Dispensing (dispensing) method is difficult to adjust the lens shape, it takes a long time, injection method is to put a silicon cap (LED) on the LED, and to fill the cap by injecting silicon through a small hole, In order to prevent bubbles, a large amount of silicon is added to the silicon loss rate, which takes a long time. In addition, the transfer and compression method needed to solve problems such as silicon lifting and resin flow.

본 발명은 양산성이 향상된 LED패키지 제조방법을 제공하는 것이다.
The present invention is to provide a method for manufacturing LED package improved mass production.

본 발명의 일 측면에 따르면, 베이스에 LED칩을 실장하는 단계; LED칩에 산화막을 증착하는 단계; 및 산화막을 리플로우하여 렌즈를 형성하는 단계를 포함하는 LED패키지 제조방법이 제공된다.According to an aspect of the invention, mounting the LED chip on the base; Depositing an oxide film on the LED chip; And reflowing the oxide film to form a lens.

여기서, LED패키지 제조방법은 실장하는 단계와 증착하는 단계 사이에, LED칩에 형광체를 형성하는 단계를 더 포함할 수 있다. Here, the LED package manufacturing method may further include forming a phosphor on the LED chip between the mounting step and the deposition step.

그리고, LED칩은 복수 개이며, 증착하는 단계와 렌즈를 형성하는 단계 사이에, 복수의 LED칩의 위치와 크기에 상응하여 산화막의 일부를 제거하는 단계를 더 포함할 수 있다. The plurality of LED chips may further include removing a portion of an oxide film corresponding to the positions and sizes of the plurality of LED chips between the step of depositing and forming the lens.

이 때, 제거하는 단계는 산화막의 일부를 식각하여 수행될 수 있다. In this case, the removing may be performed by etching a portion of the oxide film.

또한, 산화막은 SiO2를 포함하여 이루어질 일 수 있다.
In addition, the oxide film may be made of SiO 2.

본 발명의 실시예에 따르면, LED패키지 제조방법의 양산성을 향상시킬 수 있다.
According to the embodiment of the present invention, it is possible to improve the mass productivity of the LED package manufacturing method.

도 1은 본 발명의 일 실시예에 따른 LED패키지 제조방법을 나타낸 순서도.
도 2 내지 도 6은 본 발명의 일 실시예에 따른 LED패키지를 나타낸 단면도.
도 7은 본 발명의 일 실시예에 따른 LED패키지의 렌즈를 나타낸 사진.1 is a flow chart showing a LED package manufacturing method according to an embodiment of the present invention.
2 to 6 is a cross-sectional view showing an LED package according to an embodiment of the present invention.
Figure 7 is a photograph showing a lens of the LED package according to an embodiment of the present invention.

본 발명의 특징, 이점이 이하의 도면과 발명의 상세한 설명으로부터 명확해질 것이다.The features and advantages of the present invention will become apparent from the following drawings and detailed description of the invention.

이하, 본 발명에 따른 LED패키지 제조방법의 실시예를 첨부도면을 참조하여 상세히 설명하기로 하며, 첨부 도면을 참조하여 설명함에 있어, 동일하거나 대응하는 구성 요소는 동일한 도면번호를 부여하고 이에 대한 중복되는 설명은 생략하기로 한다.Hereinafter, an embodiment of the LED package manufacturing method according to the present invention will be described in detail with reference to the accompanying drawings, in the description with reference to the accompanying drawings, the same or corresponding components are given the same reference numerals and duplicated thereto The description will be omitted.

도 1은 본 발명의 일 실시예에 따른 LED패키지(100) 제조방법을 나타낸 순서도이다. 도 1에 도시된 바와 같이, 본 발명의 일 실시예에 따른 LED패키지(100) 제조방법은, 베이스(110)에 LED칩(120)을 실장하는 단계(S100), LED칩(120)에 형광체(130)를 형성하는 단계(S200), LED칩(120)에 산화막(140)을 증착하는 단계(S300), 복수의 LED칩(120)의 위치와 크기에 상응하여 산화막(140)의 일부를 식각하여 제거하는 단계(S400) 및 산화막(140)을 리플로우하여 렌즈(144)를 형성하는 단계(S500)를 포함함으로써, LED패키지(100) 제조의 양산성을 향상시킬 수 있다.1 is a flowchart illustrating a method of manufacturing an LED package 100 according to an embodiment of the present invention. As shown in Figure 1, the LED package 100 manufacturing method according to an embodiment of the present invention, the step of mounting the LED chip 120 on the base 110 (S100), the phosphor on the LED chip 120 Forming a 130 (S200), depositing an oxide film 140 on the LED chip 120 (S300), and a part of the oxide film 140 corresponding to positions and sizes of the plurality of LED chips 120. By etching (S400) and reflowing the oxide layer 140 to form a lens 144 (S500), it is possible to improve the mass productivity of the LED package 100 manufacturing.

도 2 내지 도 6은 본 발명의 일 실시예에 따른 LED패키지(100)를 나타낸 단면도이다. 도 2에 도시된 바와 같이, 먼저, 베이스(110)에 LED칩(120)을 실장할 수 있다. (S100) 베이스(110)는 LED패키지(100)를 구성하는 구성품들이 결합될 수 있는 지지체일 수 있다. 베이스(110)는 예를 들어 세라믹 인쇄회로기판(ceramic printed circuit board)일 수 있다. 2 to 6 are cross-sectional views showing the LED package 100 according to an embodiment of the present invention. As shown in FIG. 2, first, the LED chip 120 may be mounted on the base 110. The base 110 may be a support to which components of the LED package 100 may be coupled. The base 110 may be, for example, a ceramic printed circuit board.

LED칩(120)은 LED소자와 와이어를 포함할 수 있다. LED소자는 베이스(110) 상에 접착될 수 있으며, 와이어는 베이스(110) 상에 형성되는 회로패턴에 본딩(bonding)되어 전기적 연결을 형성할 수 있다. LED칩(120)을 베이스(110)에 실장하는 공정을 다이 어태치(die attach)라 부를 수 있다.The LED chip 120 may include an LED device and a wire. The LED device may be bonded onto the base 110, and the wire may be bonded to a circuit pattern formed on the base 110 to form an electrical connection. The process of mounting the LED chip 120 on the base 110 may be referred to as a die attach.

다음으로, 도 3에 도시된 바와 같이, LED칩(120)에 형광체(130)를 형성할 수 있다. (S200) 형광체(130)는 형광물질이 혼합된 수지재일 수 있다. 형광체(130)는 LED칩(120)이 실장된 베이스(110) 위, 전체에 도포되어, 하나의 층을 형성할 수 있다. Next, as shown in FIG. 3, the phosphor 130 may be formed on the LED chip 120. The phosphor 130 may be a resin material in which phosphors are mixed. The phosphor 130 may be coated on the entire base 110 on which the LED chip 120 is mounted to form one layer.

다음으로, 도 4에 도시된 바와 같이, LED칩(120)에 산화막(140)을 증착할 수 있다. (S300) 물론, 이 때 LED칩(120) 상에 형광체(130)가 도포되어 있으므로, 형광체(130) 상에 산화막(140)을 증착하는 방법으로 수행될 수 있다. 산화막(140)은 예를 들어 SiO2를 포함하여 이루어질 수 있다. Next, as shown in FIG. 4, an oxide layer 140 may be deposited on the LED chip 120. Of course, at this time, since the phosphor 130 is coated on the LED chip 120, it may be performed by a method of depositing the oxide film 140 on the phosphor 130. The oxide film 140 may include, for example, SiO 2.

산화막(140)은 형광체(130) 상에 베이스(110) 전체에 걸쳐 증착될 수 있다. 이 때, 증착된 산화막(140)의 두께는 형성할 렌즈(144)의 직경 이상일 수 있다.The oxide layer 140 may be deposited over the base 110 on the phosphor 130. In this case, the thickness of the deposited oxide layer 140 may be equal to or greater than the diameter of the lens 144 to be formed.

다음으로, 도 5에 도시된 바와 같이, LED칩(120)의 위치와 크기에 상응하여 산화막(140)의 일부를 식각하여 제거할 수 있다. (S400) 본 공정은 LED칩(120)이 실장된 위치에 형성되며, 형성될 렌즈(144)의 직경을 가지 산화막의 일부(142)를 잔존시키고, 산화막(140)의 나머지를 제거하도록 수행될 수 있다. Next, as shown in FIG. 5, a portion of the oxide layer 140 may be etched and removed to correspond to the position and size of the LED chip 120. (S400) This process is performed at the position where the LED chip 120 is mounted, and is performed to leave a portion 142 of the oxide film having the diameter of the lens 144 to be formed and to remove the remainder of the oxide film 140. Can be.

에칭레지스트를 이용하여 렌즈(144)로 형성될 산화막의 일부(142)를 커버하고, 나머지 부분을 식각(etching)하여, 렌즈(144)로 형성될 부분의 산화막(140)을 잔존시킬 수 있다.The etching resist may be used to cover a portion 142 of the oxide film to be formed of the lens 144, and the remaining portion may be etched to leave the oxide film 140 of the portion to be formed of the lens 144.

다음으로, 도 6에 도시된 바와 같이, 산화막(140)을 리플로우(reflow)하여 렌즈(144)를 형성할 수 있다. (S500) 본 공정은 LED칩(120) 상에 잔존하는 산화막(142)이 렌즈(144)가 될 수 있도록 산화막(142)을 가열한 후, 경화할 수 있다.Next, as shown in FIG. 6, the lens 144 may be formed by reflowing the oxide layer 140. In this step, the oxide film 142 may be cured after the oxide film 142 is heated so that the oxide film 142 remaining on the LED chip 120 becomes the lens 144.

본 공정은 잔존하는 산화물의 외곽이 완만한 곡면 또는 구의 일부를 이룰 수 있도록 동일한 온도와 가열 시간으로 반복 수행될 수 있다.The process may be repeated at the same temperature and heating time so that the outer periphery of the remaining oxide may form part of a smooth curved surface or sphere.

도 7은 본 발명의 일 실시예에 따른 LED패키지(100)의 렌즈(144)를 나타낸 사진이다. 도 7에 도시된 바와 같이, 예를 들어, 본 공정은 섭씨 140도에서 5분간 가열하는 공정이 4번 수행될 수 있다.7 is a photograph showing the lens 144 of the LED package 100 according to an embodiment of the present invention. As shown in FIG. 7, for example, the present process may be performed four times of heating for 5 minutes at 140 degrees Celsius.

상술한 바와 같이, 본 발명의 일 실시예에 따른 LED패키지(100) 제조방법은, 식각 공정을 통해 잔존하는 산화막(140)의 크기를 조절함으로써, 렌즈(144)의 크기를 보다 용이하게 제어할 수 있다. As described above, the LED package 100 manufacturing method according to an embodiment of the present invention, by controlling the size of the remaining oxide film 140 through the etching process, it is easier to control the size of the lens 144. Can be.

그리고, 본 실시예는 산화막(140)을 리플로우 하는 공정을 통해 렌즈(144)의 형상을 보다 용이하게 제어할 수 있는 방법을 제시할 수 있다. 이로써, 본 실시예는 LED패키지(100)의 양산성을 향상시킬 수 있는 것이다.
In addition, the present embodiment may provide a method for more easily controlling the shape of the lens 144 through a process of reflowing the oxide layer 140. Thus, this embodiment can improve the mass productivity of the LED package 100.

상기에서는 본 발명의 바람직한 실시예를 참조하여 설명하였지만, 해당 기술 분야에서 통상의 지식을 가진 자라면 하기의 특허 청구의 범위에 기재된 본 발명의 사상 및 영역으로부터 벗어나지 않는 범위 내에서 본 발명을 다양하게 수정 및 변경시킬 수 있음을 이해할 수 있을 것이다.
Although the above has been described with reference to a preferred embodiment of the present invention, those skilled in the art to which the present invention pertains without departing from the spirit and scope of the present invention as set forth in the claims below It will be appreciated that modifications and variations can be made.

100: LED패키지
110: 베이스
120: LED칩
130: 형광체
140: 산화막
144: 렌즈100: LED package
110: base
120: LED chip
130: phosphor
140: oxide film
144: lens

Claims (5)

베이스에 LED칩을 실장하는 단계;
상기 LED칩에 산화막을 증착하는 단계; 및
상기 산화막을 리플로우하여 렌즈를 형성하는 단계를 포함하는 LED패키지 제조방법.
Mounting an LED chip on the base;
Depositing an oxide film on the LED chip; And
Reflowing the oxide film to form a lens comprising the LED package manufacturing method.
제1항에 있어서,
상기 실장하는 단계와 상기 증착하는 단계 사이에,
상기 LED칩에 형광체를 형성하는 단계를 더 포함하는 LED패키지 제조방법.
The method of claim 1,
Between the mounting and depositing steps,
The LED package manufacturing method further comprising the step of forming a phosphor on the LED chip.
제1항에 있어서,
상기 LED칩은 복수 개이며,
상기 증착하는 단계와 상기 렌즈를 형성하는 단계 사이에,
복수의 상기 LED칩의 위치와 크기에 상응하여 상기 산화막의 일부를 제거하는 단계를 더 포함하는 LED패키지 제조방법.
The method of claim 1,
The LED chip is a plurality,
Between the depositing and forming the lens,
Removing a portion of the oxide film corresponding to the position and size of the plurality of LED chip LED package manufacturing method.
제3항에 있어서,
상기 제거하는 단계는
상기 산화막의 일부를 식각하여 수행되는 것을 특징으로 하는 LED패키지 제조방법.
The method of claim 3,
The removing step
LED package manufacturing method, characterized in that performed by etching a portion of the oxide film.
제1항에 있어서,
상기 산화막은 SiO2를 포함하여 이루어지는 것을 특징으로 하는 LED패키지 제조방법.The method of claim 1,
The oxide film is a LED package manufacturing method comprising a SiO2.
KR1020100008934A 2010-02-01 2010-02-01 Method for manufacturing led package KR20110089500A (en)

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