KR20110080796A - Light emitting diode having electrode pads - Google Patents

Abstract

PURPOSE: A light emitting diode with electrode pads is provided to distribute an even amount of currents into each area of a light emitting diode. CONSTITUTION: A light emitting structure comprises a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. The light emitting structure is located on a substrate. An electrode pad area is isolated from the light emitting structure. The electrode pad area includes the first conductive semiconductor layer and the second conductive semiconductor layer. A first electrode pad(35) is electrically connected to the first conductive semiconductor layer of the light-emitting structure. A second electrode pad(33) is located on the second conductive semiconductor layer of the electrode pad area.

Description

LIGHT EMITTING DIODE HAVING ELECTRODE PADS

The present invention relates to a light emitting diode, and more particularly to a light emitting diode having electrode pads.

Since the development of gallium nitride (GaN) -based light emitting diodes, GaN-based LEDs have been used in various applications such as color LED display devices, LED traffic signals, and white LEDs.

A gallium nitride-based light emitting diode is generally formed by growing epi layers on a substrate such as sapphire, and includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer interposed therebetween. Meanwhile, an N-electrode pad is formed on the n-type semiconductor layer, and a P-electrode pad is formed on the p-type semiconductor layer. The light emitting diode is electrically connected to and driven by an external power source through the electrode pads. At this time, current flows from the P-electrode pad to the N-electrode pad via the semiconductor layers.

In general, since the p-type semiconductor layer has a high specific resistance, current is not evenly distributed in the p-type semiconductor layer, current is concentrated in a portion where the P-electrode pad is formed, and current flows intensively through a corner. Is generated. Current crowding leads to a reduction of the light emitting area, which in turn lowers the light emitting efficiency. In order to solve this problem, a technique of forming a transparent electrode layer having a low specific resistance on the p-type semiconductor layer to achieve current dispersion is used. Since the current flowing from the P-electrode pad is dispersed in the transparent electrode layer and flows into the p-type semiconductor layer, the light emitting area of the light emitting diode can be widened.

However, since the transparent electrode layer absorbs light, its thickness is limited, and thus there is a limit in current dispersion. In particular, current distribution using a transparent electrode layer is limited in a large area light emitting diode of about 1 mm 2 or more used for high power.

On the other hand, extensions extending from the electrode pads are used to help distribute current in the light emitting diode. For example, U. S. Patent No. 6,650, 018 discloses a plurality of extensions from electrode contacts 117, 127, i.e., electrode pads, extending in opposite directions to enhance current dispersion.

By using the plurality of extensions, the current can be distributed over a wide area of the light emitting diode, but a current density phenomenon in which current is still concentrated in a portion where the electrode pads are located is shown.

On the other hand, as the size of the light emitting diode becomes larger, the probability that defects are included in the light emitting diode increases. For example, defects such as threading dislocations, pinholes, and the like, provide passages through which current flows rapidly, thereby preventing current dispersion.

United States Patent Publication No. 6,650,018

An object of the present invention is to provide a light emitting diode that can prevent the current dense phenomenon from occurring near the electrode pad.

Another object of the present invention is to provide a light emitting diode that can evenly distribute current in a large area light emitting diode.

In order to solve the above problems, a light emitting diode according to embodiments of the present invention, a substrate; A light emitting structure on the substrate, the light emitting structure comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; An electrode pad region isolated from the light emitting structure and including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; A first electrode pad electrically connected to the first conductive semiconductor layer of the light emitting structure; A second electrode pad on the second conductive semiconductor layer in the electrode pad region; And at least one upper extension part connected to the second electrode pad and electrically connected to the second conductivity-type semiconductor layer of the light emitting structure. Since the electrode pad region in which the second electrode pad is located is isolated from the light emitting structure, the current can be prevented from being concentrated near the second electrode pad.

The light emitting diode may further include a connection part connecting the upper extension part and the second electrode pad. In this case, the connection part may be insulated from the light emitting structure. For example, an insulating layer may be interposed between the connection part and the light emitting structure to insulate the connection part from the light emitting structure.

The light emitting diode may further include an insulating layer covering the second conductive semiconductor layer of the light emitting structure. The insulating layer may have at least one opening, and the at least one upper extension may be electrically connected to the second conductive semiconductor layer of the light emitting structure through the opening.

Furthermore, the light emitting diode may further include a transparent electrode layer that is ohmic contacted with the second conductive semiconductor layer of the light emitting structure. In this case, the transparent electrode layer may be exposed by the opening of the insulating layer, and the at least one upper extension may be connected to the transparent electrode layer.

The first electrode pad may be positioned on the first conductive semiconductor layer of the light emitting structure to face the second electrode pad. The first lower extension part may extend from the first electrode pad toward the second electrode pad. The first lower extension part is electrically connected to a first conductivity type semiconductor layer of the light emitting structure. Furthermore, an end portion of the first lower extension portion may be closer to the second electrode pad than the first electrode pad.

In addition, the light emitting diode may further include a second lower extension extending from the first electrode pad, wherein the second lower extension extends along an edge of the substrate.

In some embodiments, the second conductivity-type semiconductor layer and the active layer of the light emitting structure may be divided to define at least two light emitting regions. Upper extensions connected to the second electrode pads are disposed on the at least two light emitting regions, respectively. By dividing the light emitting structure into a plurality of light emitting regions, even if there are defects such as pinholes or actual potentials in a specific position, it is possible to prevent excessive concentration of currents in these defects, thus distributing the current evenly over a wide area. have.

Meanwhile, the first conductivity type semiconductor layer of the light emitting structure may be shared by the at least two light emitting regions. In addition, the first electrode pad may be positioned on the first conductive semiconductor layer of the light emitting structure to face the second electrode pad.

The first lower extension part extending from the first electrode pad toward the second electrode pad may be located between the light emitting regions. Furthermore, the first lower extension and the upper extension may be parallel to each other.

In some embodiments, the light emitting diode may further include a transparent electrode layer and / or an insulating layer positioned between the second conductive semiconductor layer of the electrode pad region and the second electrode pad.

According to the exemplary embodiments of the present invention, the second electrode pad is positioned on the electrode pad region isolated from the light emitting structure to prevent the current from being concentrated near the second electrode pad. In addition, in the case of a large area light emitting diode, current is easily concentrated on defects in the semiconductor layer such as pinholes and real potentials, but by dividing the light emitting structure into a plurality of light emitting regions, current can be evenly distributed in each region of the light emitting diode. Can be.

1 is a plan view illustrating a light emitting diode according to an exemplary embodiment of the present invention.
2A, 2B and 2C are cross-sectional views taken along the cut lines AA, BB and CC of FIG. 1, respectively.
3A to 3E are plan views illustrating a method of manufacturing a light emitting diode according to an embodiment of the present invention.
4 is a plan view illustrating a light emitting diode according to still another embodiment of the present invention.
5 is a plan view illustrating a light emitting diode according to still another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided as examples to ensure that the spirit of the present invention to those skilled in the art will fully convey. Accordingly, the present invention is not limited to the embodiments described below and may be embodied in other forms. And, in the drawings, the width, length, thickness, etc. of the components may be exaggerated for convenience. Like numbers refer to like elements throughout.

1 is a plan view illustrating a light emitting diode according to an exemplary embodiment of the present invention, and FIGS. 2A, 2B, and 2C are cross-sectional views taken along the cutting lines A-A, B-B, and C-C of FIG. 1, respectively.

1, 2A to 2C, the light emitting diode includes a substrate 21, a light emitting structure including light emitting regions LE1 and LE2, an electrode pad region EP isolated from the light emitting structure, and a first electrode. And a pad 35, a second electrode pad 33, and upper extensions 33a. In addition, the light emitting diode may include a transparent electrode layer 29, an insulating layer 31, connection parts 33b, a first lower extension part 35a, and a second lower extension part 35b. In addition, the light emitting structure and the electrode pad region EP each include a first conductive semiconductor layer 23, an active layer 25, and a second conductive semiconductor layer 27.

The substrate 11 is not particularly limited and may be, for example, a sapphire substrate. The light emitting structure and the electrode pad region EP are positioned on the substrate 21.

The first conductive semiconductor layer 23 is positioned on the substrate 21, the second conductive semiconductor layer 27 is positioned on the first conductive semiconductor layer 23, and the first conductive semiconductor layer is disposed on the substrate 21. The active layer 25 is interposed between the second conductive semiconductor layer and the second conductive semiconductor layer. The first conductive semiconductor layer 23, the active layer 25, and the second conductive semiconductor layer 27 may be formed of a gallium nitride-based compound semiconductor material, that is, (Al, In, Ga) N. The active layer 25 has a composition element and composition ratio determined so as to emit light of a desired wavelength, such as ultraviolet light or blue light.

The first conductive semiconductor layer 23 may be an n-type nitride semiconductor layer, and the second conductive semiconductor layer 27 may be a p-type nitride semiconductor layer or vice versa.

The first conductive semiconductor layer 23 and / or the second conductive semiconductor layer 27 may be formed as a single layer, as shown, but may be formed in a multilayer structure. In addition, the active layer 25 may have a single quantum well or multiple quantum well structures. In addition, a buffer layer (not shown) may be interposed between the substrate 21 and the first conductivity-type semiconductor layer 23. The semiconductor layers 23, 25, 27 may be formed using MOCVD or MBE technology.

The second conductivity-type semiconductor layer and the active layer of the light emitting structure may be divided to define at least two light emitting regions LE1 and LE2. These emission regions LE1 and LE2 may be formed to have a symmetrical structure, and this division process may be performed by a mesa etching process. An indentation 30b may be formed by the mesa etching process so that the second conductivity-type semiconductor layer 27 and the active layer 25 may be divided into two regions. In addition, side surfaces of the light emitting structure formed by the mesa etching process may preferably have an inclination angle within the range of 30 to 70 degrees with respect to the surface of the substrate 21. In addition, the first conductivity-type semiconductor layer 23 of the emission regions LE1 and LE2 may be shared by the emission regions, and thus, the first conductivity-type semiconductor layer 23 is disposed between the emission regions. Is exposed.

In addition, the transparent electrode layer 29 may be positioned on the second conductive semiconductor layer 29 of the light emitting structure. The transparent electrode layer 29 may be formed of ITO or Ni / Au and is ohmic contacted to the second conductivity-type semiconductor layer 29.

Meanwhile, the electrode pad region EP is isolated from the light emitting structure. That is, the first conductive semiconductor layer 23, the active layer 25, and the second conductive semiconductor layer 27 in the electrode pad region may be the first conductive semiconductor layer 23 and the active layer 25 of the light emitting structure. And the second conductive semiconductor layer 27. Thus, the electrode pad region EP is electrically insulated from the light emitting structure. The electrode pad region EP may be isolated from the light emitting structure by the trench region TI formed in the first conductivity type semiconductor layer 27. Meanwhile, a transparent electrode layer 29 such as ITO or Ni / Au may be positioned on the electrode pad region EP.

The insulating layer 31 may cover the second conductive semiconductor layer 27 (or the transparent electrode layer 29) of the light emitting structure. The insulating layer 31 may also cover side surfaces of the second conductive semiconductor layer 29 and the active layer 25 exposed by mesa etching. In addition, the insulating layer 31 has openings 31a exposing the transparent electrode layers 29 on the light emitting regions LE1 and LE2. The transparent electrode layer 29 (or the second conductive semiconductor layer 27) is exposed by the openings 31a. In addition, the insulating layer 31 may cover the second conductive semiconductor layer 27 (or the transparent electrode layer 29) of the electrode pad region EP, and may cover the side surface of the electrode pad region EP. Can be. The insulating layer 31 is not particularly limited as long as it is a transparent material through which light generated by the active layer 25 can pass, and may be formed of, for example, SiO ₂ .

Meanwhile, a first electrode pad 35 may be positioned on the exposed first conductive semiconductor layer 23 of the light emitting structure, and a second electrode pad 33 is positioned on the electrode pad region EP. do. As illustrated, the first electrode pad 35 may be disposed to face the second electrode pad 33. The first and second electrode pads 35 and 33 have relatively large areas to bond the wires as bonding pads for bonding the wires.

The first electrode pad 35 is electrically connected to the first conductive semiconductor layer 23. In addition, the first lower extension part 35a may extend from the first electrode pad 35 toward the second electrode pad 33. The first lower extension part 35a is positioned on the first conductivity type semiconductor layer 23 of the light emitting structure and electrically connected to the first conductivity type semiconductor layer 23. As shown, the first lower extension part 35a is located in the indentation part 30b between the light emitting regions LE1 and LE2, and an end thereof is located close to the second electrode pad 33. can do. Furthermore, second lower extensions 35b may extend from the first electrode pad 35, and the second lower extensions 35b may extend from the first electrode pad 35 to the edge of the substrate 21. Can extend along.

The second electrode pad 33 is positioned on the electrode pad region EP. The second electrode pad 33 is positioned on the second conductive semiconductor layer, and the transparent electrode layer 29 and / or the insulating layer 31 are formed of the second electrode pad 33 and the second conductive semiconductor layer ( 27) may be intervened. When the insulating layer 31 is interposed between the second electrode pad 33 and the second conductive semiconductor layer 27 (or the transparent electrode layer 29), the second electrode pad is electrically connected from the electrode pad region EP. Can be insulated.

Meanwhile, upper extensions 33a are positioned on the emission regions LE1 and LE2. The upper extensions 33a may be electrically connected to the transparent electrode layer 29 (or the second conductive semiconductor layer 27) through the openings 31a of the insulating layer 31. The second conductive semiconductor layer 27 may be exposed through the openings 31a, and the upper extensions 33a may be directly connected to the second conductive semiconductor layer 27. The upper extensions 33a may be disposed to evenly distribute current in the second conductivity type semiconductor layer 27. For example, the upper extensions 33a may extend in parallel to each other. In addition, the upper extensions 33a may be parallel to the first lower extensions 35a. The upper extensions 33a may be connected to the second electrode pads 33 through the connecting portions 33b, respectively. Here, the connection parts 33b are insulated from the transparent electrode layer 27 (or the second conductivity type semiconductor layer 27) by the insulating layer 31. In addition, the connection parts 33a may be insulated from the side surface of the light emitting structure by the insulating layer 31.

The electrode pads 33 and 35, the upper extensions 33a, the connecting portions 33b and the first and second lower extensions 35a and 35b use the same process with the same metal material, for example, Cr / Au. It may be formed together, but is not limited thereto. For example, the upper extensions 33a and the second electrode pad 33 may be formed by separate processes, or may be formed of different materials.

In the present embodiment, the light emitting diode may have a symmetrical structure with respect to a line crossing the first electrode pad 35 and the second electrode pad 33, for example, the cutting line B-B of FIG. 1. The transparent electrode layer 29 and the upper extensions 33a may be symmetrically disposed with each other, and the second lower extensions 35b may be symmetrically disposed with each other. Accordingly, the light emitting diode may exhibit the same light emission characteristics at both sides of the indentation portion 30b. Thus, by dividing the light emitting regions into two regions, current can be dispersed by reducing current concentration in defects such as pinholes or real potentials.

In the present embodiment, it has been described that the first electrode pad 35 is positioned on the first conductive semiconductor layer 23. However, when the substrate 21 is conductive, the first electrode pad 35 is It may be located on the bottom surface of the substrate 21 or on the substrate 21. In this case, the second electrode pad 33 is insulated from the electrode pad region EP by the insulating layer 31.

3A to 3E are plan views illustrating a method of manufacturing a light emitting diode according to an embodiment of the present invention. Since the method of forming the semiconductor layers 23, 25, 27, the transparent electrode layer 29, and the insulating layer 31 is generally well known, a detailed description thereof will be omitted.

First, referring to FIG. 3A, semiconductor layers including the first conductive semiconductor layer 23, the active layer 25, and the second conductive semiconductor layer 27 are formed on the substrate 21. Subsequently, the semiconductor layers are mesa-etched to expose the first conductive semiconductor layer 23. The semiconductor layers may be formed to be inclined at an inclination angle of 30 to 70 degrees, for example. At this time, the region 30a in which the first electrode pad 35 is to be formed, the region 30b in which the first lower extension 35a is to be formed, and the second lower extension 35b are formed in FIG. 1. The first conductive semiconductor layer 23 in the region 30c to be exposed is exposed. An area 30b in which the first lower extension part 35a is to be formed becomes an indentation part 30b that penetrates into the light emitting diode. The indentation portion 30b penetrates inwardly from the region 30a in which the first electrode pad is to be formed. Meanwhile, the first conductive semiconductor layer 23 around the electrode pad region EP is exposed by the mesa etching process, and the second conductive semiconductor layer and the active layer of the electrode pad region EP are left without being etched. . Accordingly, the second conductive semiconductor layer 27 and the active layer 23 are divided to define two light emitting regions LE1 and LE2 by the mesa etching process, and the electrode pad region EP is defined.

Referring to FIG. 3B, the trench TI is formed by etching the first conductive semiconductor layer 23 around the electrode pad region EP. The electrode pad region EP is isolated from the first conductivity type semiconductor layer 23 of the light emitting structure including the light emitting regions LE1 and LE2 by the trench TI in an island shape.

Referring to FIG. 3C, a transparent electrode layer 29 may be formed on the second conductive semiconductor layer 27 of the emission regions LE1 and LE2. The transparent electrode layer 29 may also be formed on the electrode pad region EP. The transparent electrode layer 29 may be formed to have a symmetrical structure with respect to the line passing through the indentation part 30b. The transparent electrode layer 29 may be formed of ITO or Ni / Au, and is ohmic contacted to the second conductive semiconductor layer 27.

Referring to FIG. 3D, an insulating layer 31 is formed on the light emitting structure. The insulating layer 31 may cover the transparent electrode layer 29 of the light emitting structure, and may also cover the transparent electrode layer 29 on the electrode pad region EP. The insulating layer 31 may also cover side surfaces of the second conductive semiconductor layer 27 and the active layer 23 exposed by mesa etching. The insulating layer 31 is patterned by photolithography and etching to form openings 31a exposing the transparent electrode layers 29 on the light emitting regions LE1 and LE2. The openings 31a exposing the transparent electrode layer 29 may be symmetrically formed in parallel to each other. In addition, the first conductive semiconductor layer 23 in the region where the first electrode pad 35, the first lower extension part 35a, and the second lower extension parts 35b are to be formed is exposed.

Referring to FIG. 3E, the first electrode pad 35, the first lower extension part 35a, and the second lower extension parts 35b are formed on the exposed first conductive semiconductor layer 23 of the light emitting structure. do. In addition, a second electrode pad 33 is formed on the electrode pad area EP, upper extensions 33a are formed in the openings 31a, and the second electrode pad 33 and the upper part are formed. Connections 33b are formed to connect the extensions 33a.

The upper extensions 33a may be connected to the transparent electrode layer 29, and may be formed in parallel with the first lower extensions 35a. Thus, a light emitting diode as shown in FIG. 1 is completed.

In the present exemplary embodiment, the light emitting structure is described as being divided into two light emitting regions LE1 and LE2, but the present invention is not limited thereto and may be divided into a larger number of regions. In addition, although the transparent electrode layer 29 is formed after the mesa etching process, the mesa etching process may be performed after the transparent electrode layer 29 is formed. In addition, although the trenches TI are formed after the mesa etching process, the trenches TI may be formed first and the mesa etching process may be performed.

4 is a plan view illustrating a light emitting diode according to still another embodiment of the present invention.

In the embodiment of FIG. 1, the first electrode pad 35 and the second electrode pad 33 are arranged along the long axis direction of the light emitting diode, and the indentation 30b is formed along the long axis direction of the light emitting diode. However, in the present embodiment, the electrode pads 53 and 55 are disposed along the short axis direction of the light emitting diode, and the indentation portion 60b is formed along the short axis direction of the light emitting diode. The transparent electrode layer 29, the upper extensions 53a and the lower extensions 55a are arranged in a symmetrical structure.

Here, the upper extensions 53a extend in the outer side of the light emitting diode so as to surround the light emitting diode, and further include an extension 53b that penetrates inward from the outside of the light emitting diode. On the other hand, the lower extensions 55a extend from the inside to the outside of the light emitting diode. In addition, the lower extensions 55a may be bifurcated so as to surround the extension 53b in the light emitting regions, respectively.

Meanwhile, the upper extensions 53a are connected to the transparent electrode layer 29 on the light emitting regions LE1 and LE2 through the openings 31a of the insulating layer 31, and are connected to each other by the connecting portions 53b. It is connected to the electrode pad 53. The connection parts 53b are insulated from the light emitting structure by the insulating layer 31.

Meanwhile, as described with reference to FIG. 1, the electrode pad region EP is isolated from the light emitting structure by the trench TI.

In the present embodiment, the first lower extension part 35a of FIG. 1 extending from the first electrode pad 55 to the second electrode pad 53 is omitted.

5 is a plan view illustrating a light emitting diode according to still another embodiment of the present invention.

Referring to FIG. 5, the light emitting diode according to the present embodiment is generally similar to the light emitting diode described with reference to FIG. 4, but there are differences in the arrangement of the lower extensions 65a and the upper extensions 63a.

That is, the lower extensions 65a extend outwardly of the light emitting diodes and then penetrate inward, and the upper extensions 63a include two extensions on each transparent electrode layer 29, and these two extensions It is arrange | positioned so as to surround the lower extension part 65a which penetrated in this inside.

The upper extensions 63a are connected to the transparent electrode layer 29 on the light emitting regions LE1 and LE2 through the openings 31a of the insulating layer 31, and the second electrode pads are connected to each other by the connecting portions 63b. 53 is connected. The connecting portions 63b are insulated from the light emitting structure by the insulating layer 31.

While some embodiments of the invention have been described above, various embodiments and variations are possible with respect to the arrangement of electrode pads and extensions.

21 is a substrate, 23 is a first conductive semiconductor layer, 25 is an active layer,
27 is a second conductive semiconductor layer, 29 is a transparent electrode layer,
30a: first electrode pad forming region, 30b: indentation portion,
30c: second lower extension forming region, 31: insulating layer, 31a: opening,
33, 53: second electrode pad, 33a: upper extension portion, 33b, 53b, 63b: connection portion,
35, 55: first electrode pad, 35a: first lower extension portion,
35b: second lower extension, 53b: extension, 55a, 65a: lower extension,
LE1, LE2: light emitting area, EP: electrode pad area, TI: trench

Claims (15)

Board;
A light emitting structure on the substrate, the light emitting structure comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer;
An electrode pad region isolated from the light emitting structure and including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer;
A first electrode pad electrically connected to the first conductive semiconductor layer of the light emitting structure;
A second electrode pad on the second conductive semiconductor layer in the electrode pad region; And
And at least one upper extension connected to the second electrode pad and electrically connected to the second conductive semiconductor layer of the light emitting structure. The method according to claim 1,
Further comprising a connecting portion connecting the upper extension and the second electrode pad,
And the connection portion is insulated from the light emitting structure. The method according to claim 2,
Further comprising an insulating layer covering the second conductivity-type semiconductor layer of the light emitting structure,
The insulating layer has at least one opening,
And the at least one upper extension is electrically connected to a second conductivity type semiconductor layer of the light emitting structure through the opening. The method according to claim 3,
Further comprising a transparent electrode layer in ohmic contact with the second conductivity-type semiconductor layer of the light emitting structure,
The transparent electrode layer is exposed by an opening of the insulating layer,
And the at least one upper extension part is connected to the transparent electrode layer. The method according to claim 1,
The first electrode pad is disposed on the first conductive semiconductor layer of the light emitting structure facing the second electrode pad. The method according to claim 5,
And a first lower extension part extending from the first electrode pad toward the second electrode pad and electrically connected to the first conductive semiconductor layer of the light emitting structure. The method of claim 6,
An end portion of the first lower extension part is closer to the second electrode pad than the first electrode pad. The method according to claim 7,
And a second lower extension extending from the first electrode pad, wherein the second lower extension extends along an edge of the substrate. The method according to claim 1,
The second conductivity type semiconductor layer and the active layer of the light emitting structure are divided to define at least two light emitting regions,
And an upper extension connected to the second electrode pads on the at least two light emitting regions, respectively. The method according to claim 9,
And a first conductivity type semiconductor layer of the light emitting structure is shared by the at least two light emitting regions. The method according to claim 10,
The first electrode pad is disposed on the first conductivity type semiconductor layer of the light emitting structure facing the second electrode pad. The method of claim 11,
Further comprising a first lower extension extending from the first electrode pad toward the second electrode pad,
The first lower extension portion is positioned between the light emitting regions. The method of claim 12,
The first lower extension and the upper extension are parallel to each other. The method according to claim 1,
And a transparent electrode layer disposed between the second conductive semiconductor layer in the electrode pad region and the second electrode pad. The method according to claim 1,
And an insulating layer disposed between the second conductive semiconductor layer in the electrode pad region and the second electrode pad.

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