KR20110079333A - Image sensor of tacked type - Google Patents
Image sensor of tacked type Download PDFInfo
- Publication number
- KR20110079333A KR20110079333A KR1020090136351A KR20090136351A KR20110079333A KR 20110079333 A KR20110079333 A KR 20110079333A KR 1020090136351 A KR1020090136351 A KR 1020090136351A KR 20090136351 A KR20090136351 A KR 20090136351A KR 20110079333 A KR20110079333 A KR 20110079333A
- Authority
- KR
- South Korea
- Prior art keywords
- color filter
- photodiode
- image sensor
- semiconductor substrate
- stack
- Prior art date
Links
- 239000010410 layer Substances 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000004065 semiconductor Substances 0.000 claims abstract description 21
- 230000000295 complement effect Effects 0.000 claims abstract description 17
- 239000011229 interlayer Substances 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- 150000002500 ions Chemical class 0.000 claims description 12
- 238000005036 potential barrier Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- 239000012535 impurity Substances 0.000 claims description 8
- 230000005540 biological transmission Effects 0.000 claims description 6
- 238000001465 metallisation Methods 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 4
- 230000010354 integration Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 5
- 238000003491 array Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14607—Geometry of the photosensitive area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
Embodiments relate to stacked image sensors.
Recently, pixel size of image sensor is getting smaller for high resolution, and the size is approaching the optical limit. In this situation, several similar technologies have been proposed to have a high performance pixel structure while maintaining high sensitivity.
In particular, through the potential barrier structure, the stacked photodiode is applied to the 4T operation method and the CDS scheme, and scale-down is performed by eliminating the need for the junction for reading the signal of the photodiode present in each layer. A two photodiode stacked pixel structure has been developed which makes this possible.
However, in this case, although the corresponding color signals having different transmission coefficients can be extracted depending on the depth of the substrate, when the combination of the color filters is not appropriate, color reproduction is poor and abnormal signals are generated.
1 is a view illustrating a Bayer pattern of a color filter used in a conventional stacked image sensor, and FIG. 2 is a graph measuring a phenomenon in which a signal is distorted when a combination of color filters is not appropriate.
In the green and blue Bayer pattern as shown in FIG. 1, the color reproducibility is reduced on the stacked image sensor, and as shown in FIG. 2, the distortion signal A is generated by the red signal in the blue wavelength band of about 0.46 nm. have.
The embodiment provides a stackable image sensor capable of increasing integration of an image sensor and realizing high sensitivity.
Stacked image sensor according to the embodiment comprises a semiconductor substrate; A plurality of first photodiodes formed on the semiconductor substrate and forming a first stack; A plurality of second photodiodes formed on the semiconductor substrate below the first photodiode and forming a second stack; A plurality of transistors formed on the semiconductor substrate between the first photodiodes; An interlayer insulating layer formed on the semiconductor substrate; And a color filter layer formed on the interlayer insulating layer and formed of a complementary color filter pattern.
According to the embodiment, the following effects are obtained.
The photodiodes of the stacked structure are divided into potential barrier layers, and the color filter layers are composed of complementary color filter patterns forming various arrays. Can be implemented.
With reference to the accompanying drawings, a stack-type image sensor according to an embodiment will be described in detail.
3 is a graph measuring a color spectrum of a filter pattern used in a stacked image sensor according to an embodiment.
The filter pattern used in the stacked image sensor according to the embodiment may be a complementary color filter pattern. For example, a white / cyan complementary color filter pattern may be used.
Referring to FIG. 3, it can be seen that the complementary color filter has significantly less distorted color signals present in the wavelength range of light than in FIG. 2.
4 is a diagram illustrating a filter pattern used in the stacked image sensor according to the embodiment.
(A) of FIG. 4 illustrates a complementary color filter pattern of white / cyan, (b) illustrates a complementary color filter pattern of white / red / cyan / green. c) illustrates a case in which the complementary color filter patterns of white / red / cyan / green have a four-stage structure.
5 is a circuit diagram schematically showing a configuration of a stacked image sensor according to an embodiment, and FIG. 6 is a side cross-sectional view schematically showing the configuration of a stacked image sensor according to an embodiment.
5 and 6, the stacked image sensor according to the embodiment is an image sensor in which two photodiodes form a stacked structure.
Referring to FIG. 6, a plurality of
A first
For example, the
In the embodiment, the first conductivity type impurity ions are P-type ions, and the second conductivity type impurity ions are N-type ions.
In addition, the
Therefore, the transmission depth for each color of light may be adjusted by the first
A second
A plurality of
An
The
As illustrated through FIG. 4, the complementary color filter pattern may configure various pattern arrays on the
In addition, the
FIG. 7 is a diagram simulating light transmission efficiency when the interval between the
As in the embodiment, by using the structure of the first
Therefore, it is possible to improve the sensitivity of the image sensor by minimizing light interference between adjacent pixels.
As shown in FIG. 7, when the interval between the
Although described above with reference to the embodiments are only examples and are not intended to limit the invention, those of ordinary skill in the art to which the present invention does not exemplify the above within the scope not departing from the essential characteristics of the present invention. It will be appreciated that many variations and applications are possible. For example, each component specifically shown in the embodiments of the present invention can be modified and implemented. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.
1 is a diagram illustrating a Bayer pattern of a color filter used in a conventional stacked image sensor.
2 is a graph measuring a phenomenon in which a signal is distorted when a combination of color filters is not appropriate.
3 is a graph measuring a color spectrum of a filter pattern used in a stacked image sensor according to an embodiment.
4 illustrates a filter pattern used in a stacked image sensor according to an embodiment.
5 is a circuit diagram schematically illustrating a configuration of a stacked image sensor according to an embodiment.
6 is a side cross-sectional view schematically showing the configuration of a stacked image sensor according to the embodiment.
7 is a view simulating the optical transmission efficiency when adjusting the interval of the metal structure according to the embodiment.
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090136351A KR20110079333A (en) | 2009-12-31 | 2009-12-31 | Image sensor of tacked type |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090136351A KR20110079333A (en) | 2009-12-31 | 2009-12-31 | Image sensor of tacked type |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20110079333A true KR20110079333A (en) | 2011-07-07 |
Family
ID=44918716
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020090136351A KR20110079333A (en) | 2009-12-31 | 2009-12-31 | Image sensor of tacked type |
Country Status (1)
Country | Link |
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KR (1) | KR20110079333A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10979680B2 (en) | 2018-05-09 | 2021-04-13 | Samsung Electronics Co., Ltd. | Image sensors and electronic devices |
-
2009
- 2009-12-31 KR KR1020090136351A patent/KR20110079333A/en not_active Application Discontinuation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10979680B2 (en) | 2018-05-09 | 2021-04-13 | Samsung Electronics Co., Ltd. | Image sensors and electronic devices |
US11683599B2 (en) | 2018-05-09 | 2023-06-20 | Samsung Electronics Co., Ltd. | Image sensors and electronic devices |
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