KR20110079329A - Image sensor and method for manufacturing the same - Google Patents

Image sensor and method for manufacturing the same Download PDF

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Publication number
KR20110079329A
KR20110079329A KR1020090136347A KR20090136347A KR20110079329A KR 20110079329 A KR20110079329 A KR 20110079329A KR 1020090136347 A KR1020090136347 A KR 1020090136347A KR 20090136347 A KR20090136347 A KR 20090136347A KR 20110079329 A KR20110079329 A KR 20110079329A
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KR
South Korea
Prior art keywords
semiconductor substrate
trench
light
light guide
color filter
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Application number
KR1020090136347A
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Korean (ko)
Inventor
고호순
Original Assignee
주식회사 동부하이텍
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Priority to KR1020090136347A priority Critical patent/KR20110079329A/en
Publication of KR20110079329A publication Critical patent/KR20110079329A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements

Abstract

PURPOSE: An image sensor and a manufacturing method thereof are provided to make it possible arranging a photo guide at a backside of a semiconductor substrate for concentrating the light to a light receiver. CONSTITUTION: A plurality of light receivers(PD1,PD2,PD3) are especially formed in the front side of a semiconductor substrate by the unit pixel. A metal wiring layer includes a wiring formed on the front side of the semiconductor substrate. An optical guide is formed on a backside of the semiconductor substrate and concentrates the light to one among the light receivers.

Description

Image sensor and manufacturing method thereof {IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME}

Embodiments relate to an image sensor and a method of manufacturing the same.

An image sensor is a semiconductor device that converts an optical image into an electrical signal, and is classified into a charge coupled device (CCD) image sensor and a CMOS image sensor (CIS). .

In general, an image sensor forms a photodiode on a silicon substrate by ion implantation. As the size of the photodiode gradually decreases for the purpose of increasing the number of pixels without increasing the chip size, the image characteristic decreases due to the reduction of the area of the light receiver.

In addition, since the stack height is not reduced as much as the area of the light receiving unit is reduced, the number of photons incident on the light receiving unit also decreases due to a diffraction phenomenon of light called an airy disk.

As an alternative to overcome this, an attempt is made to receive light through the wafer back side to minimize the step difference of the light receiving unit, and to prevent the phenomenon of light interference caused by metal routing (back light receiving). Image sensor).

In such a back-receiving image sensor, there is no device isolation region on the rear surface of the substrate, which is very vulnerable to optical cross talk.

The embodiment provides an image sensor and a method of manufacturing the same that can improve image characteristics.

An image sensor according to an embodiment includes a plurality of light receiving units formed for each unit pixel on a front side of a semiconductor substrate; A metal wiring layer including wiring formed on an entire surface of the semiconductor substrate; And a light guide formed at a rear side of the semiconductor substrate opposite to the front surface of the semiconductor substrate and condensing light with at least one of the light receiving units.

In accordance with another aspect of the present invention, a method of manufacturing an image sensor includes: forming a plurality of light receiving units for each unit pixel on a front side of a semiconductor substrate; Forming a metal wiring layer including wiring on a front surface of the semiconductor substrate; And forming a light guide formed on a rear side of the semiconductor substrate opposite to the front surface of the semiconductor substrate and condensing light to at least one of the light receiving units.

In the image sensor according to the embodiment, an optical guide for condensing light to the light receiving unit may be disposed on the rear side of the semiconductor substrate.

The light guide may be arranged to correspond to a blue color and a green color having a relatively short wavelength.

Accordingly, the formation of the electron-hole pair by the blue color or the green color signal is made in the corresponding photodiode depletion region, and crosstalk can be effectively suppressed.

Hereinafter, a back light receiving image sensor and a method of manufacturing the same according to an embodiment will be described in detail with reference to the accompanying drawings.

In the description of the embodiments, where it is described as being formed "on / under" of each layer, it is understood that the phase is formed directly or indirectly through another layer. It includes everything.

9 is a cross-sectional view illustrating an image sensor according to an embodiment.

The image sensor according to the embodiment includes a plurality of light receiving parts 120 formed for each unit pixel on a front side of the semiconductor substrate 100; An interlayer insulating layer 140 including wirings formed on the entire surface of the semiconductor substrate 100; And a light guide formed on a back side of the semiconductor substrate 100 opposite to the front surface of the semiconductor substrate 100 and condensing light to at least one of the light receiving units 120.

The protective layer 150 may be disposed on the rear surface of the semiconductor substrate 100. For example, the protective layer 150 may be an oxide film or a nitride film.

An ion implantation layer 160 may be disposed on a rear surface of the semiconductor substrate 100 corresponding to the lower portion of the protective layer 150.

The ion implantation layer 160 may be formed of p-type ions (p +).

The ion implantation layer 160 may neutralize a charge trap at an interface of a rear surface of the semiconductor substrate 100.

The color filter array 191 including the first color filter 191, the second color filter 192, and the third color filter 193 is disposed on the rear surface of the semiconductor substrate 100 to correspond to the unit pixel.

For example, the first color filter 191 of the color filter array 191 is a blue color, the second color filter 192 is a green color, the third color filter 193 and It may be a red color.

The light passing through the color filter array 191 may be incident to the light receiving unit 120 corresponding to each unit pixel.

The light guide may be disposed at positions corresponding to the first color filter 191 and the second color filter 192.

For example, a first light guide 175 may be disposed below the first color filter 191, and a second light guide 185 may be disposed below the second color filter 192.

The first light guide 175 and the second light guide 185 may be formed by gap-filling an insulating material into the first trenches T1 and the second trenches T2 formed on the rear surface of the semiconductor substrate 100. have.

For example, the insulating layer may be a polymer including a photosensitive material, or may be an insulating film including an oxide film or a nitride film.

The first light guide 175 may have a first depth D1 based on an upper surface of the rear surface side of the semiconductor substrate 100.

The second light guide 185 may have a second depth D2 that is shallower than the first depth D1.

That is, the first light guide 175 is disposed below the first color filter 191 corresponding to the short wavelength, and the second light guide 185 below the second color filter 192 corresponding to the medium wavelength. May be disposed, and the light may be focused on the light receiving unit 120 of the corresponding pixel.

As described above, the first and second light guides 175 and 185 may be disposed on the rear surface of the semiconductor substrate 100 corresponding to the blue and green colors, which are shorter in wavelength than the red color, and may improve image characteristics.

This may be vulnerable to crosstalk of the blue signal at the bottom of the light receiver because light incidence in the back-receiving image sensor is made through the back of the substrate and red, green and blue regions are formed from the substrate surface.

In an exemplary embodiment, since the first light guide 175 is disposed on the rear surface of the semiconductor substrate 100 corresponding to the blue color filter, the light reception rate for the blue signal may be improved and the image characteristics may be improved.

In addition, since the second light guide 185 is disposed on the rear surface of the semiconductor substrate 100 corresponding to the green color filter, the light receiving rate for the green signal may be improved and image characteristics may be improved.

Although not shown, a third light guide having a third depth D3 that is shallower than the second depth D2 may be disposed on a rear surface of the semiconductor substrate 100 corresponding to the red color filter. .

A first doped layer 170 and a second doped layer 180 may be disposed around the first and second trenches T1 and T2, respectively.

The first and second doped layers 180 may be impurities of a type opposite to that of the light receiver 120. For example, the light receiving unit 120 may be made of n-type impurities, and the first and second doped layers 180 may be p-type impurities.

Dark currents caused by the surface of the semiconductor substrate 100 may be suppressed by the first and second doped layers 180.

In the image sensor according to the embodiment, an optical guide for condensing light to the light receiving unit may be disposed on the rear side of the semiconductor substrate.

The light guide may be arranged to correspond to a blue color and a green color having a relatively short wavelength.

Accordingly, the formation of the electron-hole pair by the blue color or the green color signal is made in the corresponding photodiode depletion region, and crosstalk can be effectively suppressed.

Hereinafter, a method of manufacturing an image sensor according to an embodiment will be described with reference to FIGS. 1 to 9.

First, as shown in FIG. 1, the pixel isolation region is defined by forming the device isolation region 110 on the front side of the semiconductor substrate 100.

The semiconductor substrate 100 may be a high concentration p-type substrate (p ++). The front side of the semiconductor substrate 100 may include a low concentration p-type epi layer (p-epi) by performing an epitaxial process.

The device isolation region 110 may be formed on the front surface of the semiconductor substrate 100 by an STI process. Although not shown, an ion implantation region may be further formed to isolate the light receiver 120. The ion implantation region may be formed before or after the formation of the device isolation region 120.

Next, a unit pixel including the light receiving unit 120 and the readout circuit 130 is formed in the pixel region of the semiconductor substrate 100.

The light receiver 120 may be a photodiode.

The light receiver 120 may include a first light receiver PD1, a second light receiver PD2, and a third light receiver PD3.

For example, the first light receiver PD1 generates photocharges for the blue signal, the second light receiver PD2 generates photocharges for the green signal, and the third light receiver PD3 is light for the red signal. It can generate a charge.

The light receiver 120 may be formed in the semiconductor substrate 100 by pn junctions formed by an n-type ion implantation region and a p-type ion implantation region, but is not limited thereto.

By the p-type ion implantation region, excess electrons and the like can be prevented. In addition, the embodiment may form a PNP junction to obtain a charge dumping effect.

The lead-out circuit 130 for signal processing is formed on the semiconductor substrate 100 on which the light receiving unit 120 is formed.

For example, the readout circuit 130 may include a transfer transistor, a reset transistor, a drive transistor, and a select transistor, but is not limited thereto.

The embodiment may be a mirror type pixel (Mirror Type-2-Shared) structure in which two unit pixels share one floating diffusion region, but the present invention is not limited thereto, and each unit pixel may include one floating diffusion region. have.

Next, the interlayer insulating layer 140 and the wiring are formed on the front side of the semiconductor substrate 100. For example, the wiring may include a first metal M1 and a second metal M2.

Meanwhile, a carrier wafer (not shown) may be bonded onto the interlayer insulating layer 140 including the wirings. The carrier wafer may be a means for handling the semiconductor substrate 100.

Referring to FIG. 2, a portion of the back side opposite to the front side of the semiconductor substrate 100 is removed.

For example, the lower side is removed based on the ion implantation layer (not shown) formed in the lower region of the front surface of the semiconductor substrate 100.

That is, the heat treatment of the ion implantation layer (not shown) may be performed to remove hydrogen ions by cutting them with a blade or the like after porosizing the hydrogen ions. Thereafter, a planarization process may be performed on the rear surface of the cut semiconductor substrate 100.

Alternatively, the opposite side of the front side of the semiconductor substrate 100 may be removed by a back graining process.

Referring to FIG. 3, a protective layer 150 is formed on a back side of the semiconductor substrate 100.

For example, the protective layer 150 may be an oxide film or a nitride film.

An ion implantation layer 160 is formed at an interface between the protective layer 150 and the back surface of the semiconductor substrate 100.

The ion implantation layer 160 may be formed by ion implantation of p-type impurities.

The ion implantation layer 160 may neutralize the charge trap at the interface of the back surface of the semiconductor substrate 100.

Referring to FIG. 4, a photoresist pattern 10 is formed on the protective layer 150.

The photoresist pattern 10 may expose a surface of the protective layer 150 corresponding to any one of the light receiving units 120.

For example, the photoresist pattern 10 may expose a region corresponding to the first light receiving portion PD1 that generates photocharges for the blue color.

An etching process using the photoresist pattern 10 as an etching mask is performed, and a first trench T1 is formed.

The first trench T1 may be formed by etching the protective layer 150, the ion implantation layer 160, and the back side of the semiconductor substrate 100 to a predetermined depth.

For example, the first trench T1 may be formed to have a first depth D1 based on the protective layer 150, which is an upper surface of the rear surface side of the semiconductor substrate 100.

The first depth D1 of the first trench T1 may be formed in consideration of an epitaxial layer, a depth of depletion of the photodiode, and a penetration depth of the silicon substrate of the blue signal.

Accordingly, the optical path of the first light receiving portion PD1 corresponding to the lower portion of the first trench T1 may be shortened.

Referring to FIG. 5, a first doped layer 170 is formed around the first trench T1.

For example, the first doped layer 170 is formed by using the photoresist pattern 10 as an ion implantation mask and implanting a high concentration of p-type impurities (P +) into the first trenches T1. can do.

The first doped layer 170 may suppress dark currents caused by the back surface of the semiconductor substrate 100 and improve image characteristics.

Referring to FIG. 6, a second trench T2 is formed on the rear side of the semiconductor substrate 100 to correspond to the second light receiving portion PD2.

The second trench T2 may be formed through an etching process using a photoresist pattern (not shown) for selectively exposing the protective layer 150 corresponding to the second light receiving part PD2.

The second light receiver PD2 may be a photodiode for sensing a green color signal.

For example, the second trench T2 may be formed to have a second depth D2 that is shallower than the first depth D1.

Accordingly, the optical path of the second light receiving portion PD2 corresponding to the lower portion of the second trench T2 may be shortened.

The second doped layer 180 may be formed around the second trench T2 by ion implantation, and image characteristics may be improved by suppressing dark current.

The optical path of incident light may be shortened by the formation of the first and second trenches T1 and T2. That is, since the rear side of the semiconductor substrate is removed to a certain depth and the optical path is shortened by the removed depth, the light sensing ratios of the first and second light receiving parts PD1 and PD2 can be improved.

Referring to FIG. 7, a first light guide 175 and a second light guide 185 are formed in the first and second trenches T1 and T2.

The first and second light guides 175 and 185 may be formed by gap-filling an insulating material into the first and second trenches T1 and T2.

For example, the insulating material may be a polymer layer including a photosensitive film. Alternatively, the insulating material may be an insulating layer including an oxide film or a nitride film.

The first and second light guides 175 and 185 may be gapfilled with an insulating material into the first and second trenches T1 and T2, and may be formed by a planarization process using CMP.

The first and second light guides 175 and 185 may have the same surface height as the passivation layer 150.

Therefore, the first light guide 175 is formed on the rear side of the semiconductor substrate 100 corresponding to the first light receiving part PD1. The second light guide 185 is formed on the rear side of the semiconductor substrate 100 corresponding to the second light receiving part PD2. The protective layer 150 may be exposed on the rear side of the semiconductor substrate 100 corresponding to the third light receiving portion PD3.

Although not shown, a light guide may be formed at a position corresponding to the third light receiving portion PD3.

The first light guide 175 may be formed to a first depth D1, and the second light guide 185 may be formed to a second depth D2 that is shallower than the first depth D1.

Incident light may be incident to the first and second light receiving parts PD1 and PD2 by the first light guide 175 and the second light guide 185, respectively.

Referring to FIG. 8, a color filter array 191 is formed on the rear surface of the semiconductor substrate 100. That is, the color filter array 191 may be formed on the passivation layer 150 including the first and second light guides 175 and 185.

The color filter array 191 may be formed one by one for each unit pixel using a dyed photoresist and separate colors from incident light.

For example, the color filter array 191 may include a first color filter 191 corresponding to a blue color, a second color filter 192 corresponding to a green color, and a third color filter 193 corresponding to a red color. It includes.

The first color filter 191 is formed on the first light guide 175 corresponding to the first light receiver PD1. The second color filter 192 is formed on the second light guide 185 corresponding to the second light receiver PD2. The third color filter 193 may be formed on the protective layer 150 corresponding to the third light receiving portion PD3.

In general, the red signal corresponding to the long wavelength is formed in the deep region of the semiconductor substrate, and the blue signal corresponding to the short wavelength is formed in the shallow region of the semiconductor substrate and may be formed in the middle region which is the green signal corresponding to the medium wavelength.

In an embodiment, the first and second light guides 175 and 185 are formed under the first color filter 191 corresponding to blue and the second color filter 192 corresponding to green, and the first and second light receiving units ( The light sensitivity of PD1, PD2) can be improved.

That is, the optical paths of the first and second light receiving parts PD1 and PD2 which generate short-wave photoelectric charges through the first and second light guides 175 and 185 may be shortened, and the light sensitivity may be uniform.

In addition, since the first and second light guides 175 and 185 inject light into the first and second light receiving units PD1 and PD2 of the corresponding pixel, crosstalk may be prevented and image characteristics may be improved.

Referring to FIG. 9, microlenses 200 are formed on the first, second and third color filters 191 and 192193, respectively.

The micro lens 200 may be formed in the form of a convex lens, and may condense light to a corresponding light receiving unit 120.

10 is a cross-sectional view illustrating an image sensor according to another exemplary embodiment. In the description of the embodiments, the same reference numerals may be used for the same configuration as the above-described embodiment, and the same technical features may be employed.

However, in some embodiments, a color filter may be formed in the trench.

For example, the trench may include a first trench T1 corresponding to the first light receiver PD1, a second trench T2 corresponding to the second light receiver PD2, and a third light receiver PD3 corresponding to the third light receiver PD3. Includes a trench T3.

The first trench T2 is formed at a first depth D1 based on the surface of the protective layer 150, and the second trench T2 is a second depth D2 that is shallower than the first depth T1. The third trench T3 may be formed to have a third depth D3 that is shallower than the second depth D2.

A first color filter 210 corresponding to a blue color is formed in the first trench T1. A second color filter 220 corresponding to the green color is formed in the second trench T2. A third color filter 230 corresponding to the red color is formed in the third trench T3.

The first, second, and third color filters 210, 220, and 230 are formed inside the first to third trenches T1, T2, and T3, and the first, second, and third light receivers PD1, PD2, and PD3. ) Can be shorter.

Accordingly, the image sensor can achieve high integration, and can also improve image characteristics.

The present invention is not limited to the described embodiments and drawings, and various other embodiments are possible within the scope of the claims.

1 to 10 are cross-sectional views illustrating a manufacturing process of an image sensor according to an embodiment.

Claims (15)

A plurality of light receiving units formed for each unit pixel on a front side of the semiconductor substrate; A metal wiring layer including wiring formed on an entire surface of the semiconductor substrate; And And a light guide formed on a rear side of the semiconductor substrate opposite to a front surface of the semiconductor substrate, the light guide condensing light with at least one of the light receiving units. The method of claim 1, The light guide, A trench formed on a back side of the semiconductor substrate to correspond to the light receiving unit; And And an insulating layer gap-filled in the trench. The method of claim 2, And a doped layer formed around the trench. The method of claim 1, The light guide is formed in plurality, The light guide includes an image sensor having different depths with respect to the rear surface of the semiconductor substrate. The method of claim 1, The light guide may include an image sensor disposed to correspond to the light receiving unit configured to sense light of a blue series corresponding to a short wavelength or a green series corresponding to a medium wavelength. The method of claim 1, The light receiver includes a first light receiver, a second light receiver, and a third light receiver, A blue color filter, a green color filter, and a red color filter are disposed on a rear surface of the semiconductor substrate corresponding to the first, second, and third light receiving units. And a first light guide and a second light guide disposed under the blue color filter and the green color filter, respectively. A plurality of light receiving units formed for each unit pixel on a front side of the semiconductor substrate; A metal wiring layer including wiring formed on an entire surface of the semiconductor substrate; A trench formed on a rear surface of the semiconductor substrate opposite to a front surface of the semiconductor substrate so as to correspond to at least one of the light receiving portions; And And a color filter formed in the trench. The method of claim 7, wherein The trench includes a first trench having a first depth, a second trench having a second depth shallower than the first depth, and a third trench having a third depth shallower than the second depth, And a blue color filter disposed in the first trench, a green color filter disposed in the second trench, and a red color filter disposed in the third trench. Forming a plurality of light receiving units for each unit pixel on a front side of the semiconductor substrate; Forming a metal wiring layer including wiring on a front surface of the semiconductor substrate; And And forming a light guide formed on a rear side of the semiconductor substrate opposite to the front surface of the semiconductor substrate and condensing light with at least one of the light receiving units. 10. The method of claim 9, Forming the light guide, Forming a trench in a rear side of the semiconductor substrate so as to correspond to at least one of the light receiving units; Selectively forming a first conductivity type doped layer around the trench; And Gap-filling a polymer layer in the trench. 10. The method of claim 9, And forming a color filter on a rear surface of the semiconductor substrate including the light guide. 10. The method of claim 9, The light guide includes a first light guide and a second light guide, A blue color filter is formed on the first light guide, and a green color filter is formed on the second light guide. The method of claim 12, The first light guide is formed to a first depth with respect to the rear surface of the semiconductor substrate, And the second light guide has a second depth lower than the first depth. 10. The method of claim 9, Forming a protective layer on a rear surface of the semiconductor substrate before forming the light guide; And And forming an ion implantation layer under the protective layer. 10. The method of claim 9, Forming the light guide, Forming a trench on a back side of the semiconductor substrate to correspond to at least one of the light receiving units; Selectively forming a first conductivity type doped layer around the trench; And And forming a color filter in the trench.
KR1020090136347A 2009-12-31 2009-12-31 Image sensor and method for manufacturing the same KR20110079329A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160063257A (en) * 2014-11-26 2016-06-03 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 Image sensing device and manufacturing method thereof
WO2021240988A1 (en) * 2020-05-26 2021-12-02 ソニーセミコンダクタソリューションズ株式会社 Ranging device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160063257A (en) * 2014-11-26 2016-06-03 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 Image sensing device and manufacturing method thereof
WO2021240988A1 (en) * 2020-05-26 2021-12-02 ソニーセミコンダクタソリューションズ株式会社 Ranging device

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