KR20110077930A - Organic electroluminescent compounds and organic electroluminescent device comprising same - Google Patents
Organic electroluminescent compounds and organic electroluminescent device comprising same Download PDFInfo
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- KR20110077930A KR20110077930A KR1020090134613A KR20090134613A KR20110077930A KR 20110077930 A KR20110077930 A KR 20110077930A KR 1020090134613 A KR1020090134613 A KR 1020090134613A KR 20090134613 A KR20090134613 A KR 20090134613A KR 20110077930 A KR20110077930 A KR 20110077930A
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- organic
- formula
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- 150000001875 compounds Chemical class 0.000 title claims abstract description 84
- 125000003118 aryl group Chemical group 0.000 claims abstract description 37
- 239000012044 organic layer Substances 0.000 claims abstract description 25
- 238000002347 injection Methods 0.000 claims abstract description 24
- 239000007924 injection Substances 0.000 claims abstract description 24
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 8
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 6
- 125000002950 monocyclic group Chemical group 0.000 claims abstract description 5
- 125000004585 polycyclic heterocycle group Chemical group 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 50
- 239000010410 layer Substances 0.000 claims description 45
- 125000004429 atom Chemical group 0.000 claims description 30
- 125000001072 heteroaryl group Chemical group 0.000 claims description 25
- 125000000217 alkyl group Chemical group 0.000 claims description 20
- 125000003342 alkenyl group Chemical group 0.000 claims description 16
- 125000003545 alkoxy group Chemical group 0.000 claims description 16
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 16
- 230000005525 hole transport Effects 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 13
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 claims description 11
- 125000000592 heterocycloalkyl group Chemical group 0.000 claims description 10
- 229910052805 deuterium Inorganic materials 0.000 claims description 9
- 125000001424 substituent group Chemical group 0.000 claims description 9
- 125000003282 alkyl amino group Chemical group 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 125000000304 alkynyl group Chemical group 0.000 claims description 5
- 125000001769 aryl amino group Chemical group 0.000 claims description 5
- 125000004104 aryloxy group Chemical group 0.000 claims description 5
- 125000004986 diarylamino group Chemical group 0.000 claims description 5
- 150000002431 hydrogen Chemical class 0.000 claims description 4
- 125000001931 aliphatic group Chemical group 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 239000000126 substance Substances 0.000 abstract description 5
- 238000005401 electroluminescence Methods 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 description 27
- 238000003786 synthesis reaction Methods 0.000 description 27
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 15
- -1 N-carbazolephenyl Chemical group 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 10
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 9
- 101100030361 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) pph-3 gene Proteins 0.000 description 9
- 239000012153 distilled water Substances 0.000 description 9
- 239000007787 solid Substances 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 239000002019 doping agent Substances 0.000 description 8
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 8
- 239000002904 solvent Substances 0.000 description 7
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 238000003756 stirring Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 238000004440 column chromatography Methods 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- 150000002367 halogens Chemical class 0.000 description 4
- 125000000623 heterocyclic group Chemical group 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 4
- 150000002825 nitriles Chemical class 0.000 description 4
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 4
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 4
- 238000010992 reflux Methods 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- VQGHOUODWALEFC-UHFFFAOYSA-N 2-phenylpyridine Chemical compound C1=CC=CC=C1C1=CC=CC=N1 VQGHOUODWALEFC-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 125000005842 heteroatom Chemical group 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- YIWGJFPJRAEKMK-UHFFFAOYSA-N 1-(2H-benzotriazol-5-yl)-3-methyl-8-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carbonyl]-1,3,8-triazaspiro[4.5]decane-2,4-dione Chemical compound CN1C(=O)N(c2ccc3n[nH]nc3c2)C2(CCN(CC2)C(=O)c2cnc(NCc3cccc(OC(F)(F)F)c3)nc2)C1=O YIWGJFPJRAEKMK-UHFFFAOYSA-N 0.000 description 2
- QENGPZGAWFQWCZ-UHFFFAOYSA-N 3-Methylthiophene Chemical compound CC=1C=CSC=1 QENGPZGAWFQWCZ-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- YNAVUWVOSKDBBP-UHFFFAOYSA-N Morpholine Chemical compound C1COCCN1 YNAVUWVOSKDBBP-UHFFFAOYSA-N 0.000 description 2
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical compound C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 125000000609 carbazolyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3NC12)* 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229940126214 compound 3 Drugs 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- DLEDOFVPSDKWEF-UHFFFAOYSA-N lithium butane Chemical compound [Li+].CCC[CH2-] DLEDOFVPSDKWEF-UHFFFAOYSA-N 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- MZRVEZGGRBJDDB-UHFFFAOYSA-N n-Butyllithium Substances [Li]CCCC MZRVEZGGRBJDDB-UHFFFAOYSA-N 0.000 description 2
- 125000006574 non-aromatic ring group Chemical group 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 2
- NHDIQVFFNDKAQU-UHFFFAOYSA-N tripropan-2-yl borate Chemical compound CC(C)OB(OC(C)C)OC(C)C NHDIQVFFNDKAQU-UHFFFAOYSA-N 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- YJTKZCDBKVTVBY-UHFFFAOYSA-N 1,3-Diphenylbenzene Chemical group C1=CC=CC=C1C1=CC=CC(C=2C=CC=CC=2)=C1 YJTKZCDBKVTVBY-UHFFFAOYSA-N 0.000 description 1
- 125000004214 1-pyrrolidinyl group Chemical group [H]C1([H])N(*)C([H])([H])C([H])([H])C1([H])[H] 0.000 description 1
- VEPOHXYIFQMVHW-XOZOLZJESA-N 2,3-dihydroxybutanedioic acid (2S,3S)-3,4-dimethyl-2-phenylmorpholine Chemical compound OC(C(O)C(O)=O)C(O)=O.C[C@H]1[C@@H](OCCN1C)c1ccccc1 VEPOHXYIFQMVHW-XOZOLZJESA-N 0.000 description 1
- 125000002941 2-furyl group Chemical group O1C([*])=C([H])C([H])=C1[H] 0.000 description 1
- BWGRDBSNKQABCB-UHFFFAOYSA-N 4,4-difluoro-N-[3-[3-(3-methyl-5-propan-2-yl-1,2,4-triazol-4-yl)-8-azabicyclo[3.2.1]octan-8-yl]-1-thiophen-2-ylpropyl]cyclohexane-1-carboxamide Chemical compound CC(C)C1=NN=C(C)N1C1CC2CCC(C1)N2CCC(NC(=O)C1CCC(F)(F)CC1)C1=CC=CS1 BWGRDBSNKQABCB-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 1
- PCNDJXKNXGMECE-UHFFFAOYSA-N Phenazine Natural products C1=CC=CC2=NC3=CC=CC=C3N=C21 PCNDJXKNXGMECE-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- SLGBZMMZGDRARJ-UHFFFAOYSA-N Triphenylene Natural products C1=CC=C2C3=CC=CC=C3C3=CC=CC=C3C2=C1 SLGBZMMZGDRARJ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- 125000002178 anthracenyl group Chemical group C1(=CC=CC2=CC3=CC=CC=C3C=C12)* 0.000 description 1
- 125000003710 aryl alkyl group Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229940125904 compound 1 Drugs 0.000 description 1
- 229940125782 compound 2 Drugs 0.000 description 1
- 229940125898 compound 5 Drugs 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 150000002390 heteroarenes Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 125000002962 imidazol-1-yl group Chemical group [*]N1C([H])=NC([H])=C1[H] 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 125000001041 indolyl group Chemical group 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 125000002183 isoquinolinyl group Chemical group C1(=NC=CC2=CC=CC=C12)* 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000004312 morpholin-2-yl group Chemical group [H]N1C([H])([H])C([H])([H])OC([H])(*)C1([H])[H] 0.000 description 1
- 125000004572 morpholin-3-yl group Chemical group N1C(COCC1)* 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 125000005561 phenanthryl group Chemical group 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 125000003367 polycyclic group Chemical group 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 125000000561 purinyl group Chemical group N1=C(N=C2N=CNC2=C1)* 0.000 description 1
- 125000003373 pyrazinyl group Chemical group 0.000 description 1
- 125000001725 pyrenyl group Chemical group 0.000 description 1
- 125000002098 pyridazinyl group Chemical group 0.000 description 1
- 125000004076 pyridyl group Chemical group 0.000 description 1
- 125000000246 pyrimidin-2-yl group Chemical group [H]C1=NC(*)=NC([H])=C1[H] 0.000 description 1
- 125000000714 pyrimidinyl group Chemical group 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 1
- 125000005493 quinolyl group Chemical group 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 125000004306 triazinyl group Chemical group 0.000 description 1
- 125000005580 triphenylene group Chemical group 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/20—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the material in which the electroluminescent material is embedded
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/622—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing four rings, e.g. pyrene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/626—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing more than one polycyclic condensed aromatic rings, e.g. bis-anthracene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/10—Triplet emission
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
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Abstract
Description
본 발명은 전자 수송능, 정공 주입 및/또는 수송능, 및/또는 발광능이 우수한 유기발광 화합물 및 이를 하나 이상의 유기층에 포함함으로써 발광효율, 휘도, 열적 안정성, 구동 전압, 수명 등의 특성이 향상된 유기 전계 발광 소자에 관한 것이다.The present invention includes an organic light emitting compound having excellent electron transporting ability, hole injection and / or transporting ability, and / or light emitting ability, and an organic light emitting compound having improved characteristics such as luminous efficiency, luminance, thermal stability, driving voltage, and lifetime by including the same in one or more organic layers. It relates to an electroluminescent element.
유기 전자 소자는 유기 반도체 물질을 이용한 전자 소자로서, 전극과 유기 반도체 물질 사이에서의 정공 및/또는 전자의 교류를 필요로 한다. An organic electronic device is an electronic device using an organic semiconductor material, and requires an exchange of holes and / or electrons between an electrode and an organic semiconductor material.
유기 전자 소자는 동작 원리에 따라 하기와 같이 크게 두 가지로 나눌 수 있다. 첫째는 외부의 광원으로부터 소자로 유입된 광자에 의하여 유기층에서 엑시톤(exiton)이 형성되고, 이 엑시톤이 전자와 정공으로 분리되고, 이 전자와 정공이 각각 다른 전극으로 전달되어 전류원(전압원)으로 사용되는 형태의 전자 소자이다. 둘째는 2개 이상의 전극에 전압 또는 전류를 가하여 전극과 계면을 이루는 유기 반도체 물질층에 정공 및/또는 전자를 주입하고, 주입된 전자와 정공에 의하여 작동 하는 형태의 전자 소자이다. The organic electronic device can be divided into two types according to the operating principle. First, an exciton is formed in the organic layer by photons introduced from an external light source, and the exciton is separated into electrons and holes, and these electrons and holes are transferred to different electrodes to be used as current sources (voltage sources). It is an electronic device of the form. The second type is an electronic device in which holes and / or electrons are injected into the organic semiconductor material layer that interfaces with the electrodes by applying voltage or current to two or more electrodes, and is operated by the injected electrons and holes.
유기 전자 소자의 예로는 유기 전계발광(electroluminescent, EL) 소자(이하, 간단히 '유기 EL 소자'로 칭함), 유기 태양 전지, 유기 감광체(OPC) 드럼, 유기 트랜지스터 등이 있으며, 이들은 모두 소자의 구동을 위하여 전자/정공 주입 물질, 전자/정공 추출 물질, 전자/정공 수송 물질 또는 발광 물질을 필요로 한다. 이하에서는 주로 유기 EL 소자에 대하여 구체적으로 설명하지만, 상기 유기 전자 소자들에서는 전자/정공 주입 물질, 전자/정공 추출 물질, 전자/정공 수송 물질 또는 발광 물질이 모두 유사한 원리로 작용한다.Examples of organic electronic devices include organic electroluminescent (EL) devices (hereinafter simply referred to as 'organic EL devices'), organic solar cells, organic photosensitive (OPC) drums, organic transistors, etc., all of which drive the devices. For this purpose, an electron / hole injection material, an electron / hole extraction material, an electron / hole transport material or a light emitting material is required. Hereinafter, the organic EL device will be described in detail. However, in the organic EL device, an electron / hole injection material, an electron / hole extraction material, an electron / hole transport material, or a light emitting material all work on a similar principle.
일반적으로 유기 발광 현상이란 유기 물질을 이용하여 전기 에너지를 빛 에너지로 전환시켜 주는 현상을 말한다. 유기 발광 현상을 이용하는 유기 EL 소자는 통상 양극과 음극, 이들 사이에 유기층을 포함하는 구조를 가진다. 여기서 유기층은 유기 EL 소자의 효율과 안정성을 높이기 위하여 각기 다른 물질로 구성된 다층의 구조로 이루어진 경우가 많으며, 예컨대 정공 주입층, 정공 수송층, 발광층, 전자 수송층, 전자 주입층 등을 포함할 수 있다. In general, organic light emitting phenomenon refers to a phenomenon of converting electrical energy into light energy using an organic material. An organic EL device using an organic light emitting phenomenon usually has a structure including an anode and a cathode and an organic layer therebetween. The organic layer is often formed of a multilayer structure composed of different materials in order to increase the efficiency and stability of the organic EL device, and may include, for example, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer.
이러한 유기 EL 소자의 구조에서 두 전극 사이에 전압을 걸어주게 되면 양극(anode)에서는 정공이, 음극(cathode)에서는 전자가 유기층으로 주입되고, 주입된 정공과 전자가 만났을 때 엑시톤(exciton)이 형성되며, 이 엑시톤이 바닥상태로 떨어질 때 빛이 나게 된다. In the structure of the organic EL device, when a voltage is applied between two electrodes, holes are injected into the organic layer at the anode and electrons are injected into the organic layer, and excitons are formed when the injected holes and electrons meet. When the excitons fall to the ground, they shine.
유기 EL 소자에서 유기층으로 사용되는 재료는 기능에 따라, 발광 재료와 전하 수송 재료, 정공 주입 재료, 정공 수송 재료, 전자 수송 재료, 전자 주입 재료 등으로 분류될 수 있다. The material used as the organic layer in the organic EL device may be classified into a light emitting material, a charge transport material, a hole injection material, a hole transport material, an electron transport material, an electron injection material and the like depending on the function.
발광 재료는 발광색에 따라 청색, 녹색, 적색 발광 재료와, 보다 나은 천연색을 구현하기 위해 필요한 노란색 및 주황색 발광 재료로 구분될 수 있다. 또한, 색순도의 증가와 에너지 전이를 통한 발광 효율을 증가시키기 위하여, 발광 재료로서 호스트/도판트 계를 사용할 수 있다. 그 원리는 발광층을 주로 구성하는 호스트보다 에너지 대역 간극이 작고 발광 효율이 우수한 도판트를 발광층에 소량 혼합하면, 호스트에서 발생한 엑시톤이 도판트로 수송되어 효율이 높은 빛을 내는 것이다. 이때 호스트의 파장이 도판트의 파장대로 이동하므로, 이용하는 도판트의 종류에 따라 원하는 파장의 빛을 얻을 수 있다. The light emitting material may be classified into blue, green, and red light emitting materials, and yellow and orange light emitting materials required to realize a better natural color according to the light emitting color. In addition, in order to increase luminous efficiency through increase in color purity and energy transfer, a host / dopant system may be used as the light emitting material. The principle is that when a small amount of dopant having a smaller energy band gap and excellent luminous efficiency than the host mainly constituting the light emitting layer is mixed in the light emitting layer, excitons generated in the host are transported to the dopant to produce high efficiency light. At this time, since the wavelength of the host is shifted to the wavelength band of the dopant, the desired wavelength light can be obtained depending on the type of the dopant used.
특히 인광인 경우 형광에 비해 이론적으로 100%의 발광 효과를 기대할 수 있다. 이로 인해 형광에서의 25%의 발광효율 보다 높은 발광 효율을 가질 수 있다. Especially in the case of phosphorescence can be expected theoretically 100% luminous effect than fluorescence. Therefore, the luminous efficiency may be higher than the luminous efficiency of 25% in fluorescence.
그러나 현재 인광 재료의 경우 형광에 비해 개발 속도도 느리고 시제품에 적용시키기에는 수명이 열세가 되고 있다. However, phosphorescent materials are currently slower to develop than fluorescent lamps and are inferior in life for prototype applications.
유기 EL 소자가 갖는 우수한 특징들을 충분히 발휘하기 위해서는 소자내 유기층을 이루는 물질, 즉 정공 주입 물질, 정공 수송 물질, 발광 물질, 전자 수송 물질, 전자 주입 물질 등이 안정하고 효율적인 재료에 의하여 뒷받침되는 것이 선행되어야 하나, 아직까지 안정하고 효율적인 유기 EL 소자용 유기층 재료의 개발이 충분히 이루어지지 않은 상태이며, 이에 새로운 재료의 개발이 계속 요구되고 있다.In order to fully exhibit the excellent characteristics of the organic EL device, the material forming the organic layer in the device, that is, the hole injection material, the hole transport material, the light emitting material, the electron transport material, the electron injection material, etc., is supported by a stable and efficient material. It should be noted, however, that the development of a stable and efficient organic layer material for an organic EL device has not been sufficiently achieved. Accordingly, development of a new material is continuously required.
따라서, 본 발명의 목적은 우수한 전자 수송능, 정공 주입 및/또는 수송능 및/또는 발광능(형광 또는 인광)을 가진 유기발광 화합물 및 이를 하나 이상의 유기층에 포함함으로써 발광효율, 휘도, 열적 안정성, 구동 전압, 수명 등의 특성이 향상된 유기 EL 소자를 제공하는 것이다.Accordingly, an object of the present invention is to provide an organic light emitting compound having excellent electron transporting ability, hole injection and / or transporting ability, and / or light emitting ability (fluorescence or phosphorescence) and the light emitting efficiency, luminance, thermal stability, It is to provide an organic EL device having improved characteristics such as driving voltage and lifetime.
상기 목적을 달성하기 위하여 본 발명은 양극; 음극; 및 상기 양극과 음극 사이에 개재(介在)된 하나 이상의 유기층을 포함하는 유기 EL 소자로서, 상기 유기층 중 적어도 하나는 하기 화학식 1의 화합물을 포함하는 것을 특징으로 하는 유기 EL 소자를 제공한다:The present invention in order to achieve the above object; cathode; And at least one organic layer interposed between the anode and the cathode, wherein at least one of the organic layers comprises a compound represented by Formula 1 below:
<화학식 1><Formula 1>
상기 식에서,Where
X는 N, S 또는 O이고;X is N, S or O;
A는 치환 또는 비치환된, 핵원자수 6 내지 40의, 모노사이클릭 (monocyclic) 또는 축합 폴리사이클릭(fused polycyclic) 헤테로환(heterocycle)을 의미하되, 적 어도 X-함유 고리는 핵원자수 6 내지 8의 방향족 고리이며; A means substituted or unsubstituted, monocyclic or fused polycyclic heterocycle, having 6 to 40 nuclear atoms, provided that at least the X-containing ring is nuclear 6 to 8 aromatic rings;
R1 내지 R10은 각각 독립적으로 수소, 중수소, 치환 또는 비치환된 C1-C40 알킬, 치환 또는 비치환된 C2-C40 알케닐, 치환 또는 비치환된 C2-C40 알키닐, 치환 또는 비치환된 C5-C40 아릴, 치환 또는 비치환된 핵원자수 5 내지 40의 헤테로아릴, 치환 또는 비치환된 C5-C40 아릴옥시, 치환 또는 비치환된 C1-C40 알킬옥시, 치환 또는 비치환된 C5-C40 아릴아미노, 치환 또는 비치환된 C5-C40 디아릴아미노, (치환 또는 비치환된 C6-C40 아릴) C1-C40 알킬, 치환 또는 비치환된 C3-C40 사이클로알킬 또는 치환 또는 비치환된 핵원자수 3 내지 40의 헤테로사이클로알킬이며, R5 및 R6은 연결되어 축합고리를 형성할 수 있다.R 1 to R 10 are each independently hydrogen, deuterium, substituted or unsubstituted C1-C40 alkyl, substituted or unsubstituted C2-C40 alkenyl, substituted or unsubstituted C2-C40 alkynyl, substituted or unsubstituted C5-C40 aryl, substituted or unsubstituted heteroaryl having 5 to 40 nuclear atoms, substituted or unsubstituted C5-C40 aryloxy, substituted or unsubstituted C1-C40 alkyloxy, substituted or unsubstituted C5-C40 Arylamino, substituted or unsubstituted C5-C40 diarylamino, (substituted or unsubstituted C6-C40 aryl) C1-C40 alkyl, substituted or unsubstituted C3-C40 cycloalkyl, or substituted or unsubstituted nuclear atom 3 to 40 heterocycloalkyl, R 5 and R 6 may be linked to form a condensed ring.
또한, 본 발명은 하기 화학식 1a 또는 1b로 표시되는 화합물을 제공하다:The present invention also provides a compound represented by Formula 1a or 1b:
상기 식에서,Where
A, X, R1 내지 R10은 앞서 정의된 바와 같고;A, X, R 1 to R 10 are as defined above;
R11 내지 R21은 R1 내지 R10의 정의와 같으며;R 11 to R 21 are as defined in R 1 to R 10 ;
L은 직접 결합, 치환 또는 비치환된 C6-C40의 아릴 또는 치환 또는 비치환된 핵원자수 6 내지 40의 헤테로아릴이다.L is a direct bond, substituted or unsubstituted C6-C40 aryl or substituted or unsubstituted heteroaryl having 6 to 40 nuclear atoms.
본 발명에 따른 유기발광 화합물을 유기 EL 소자의 인광 또는 형광 호스트 재료로 채택하는 경우, 종래의 발광물질에 비해 호스트에서 도판트로의 에너지 이동이 원활이 이루어질 수 있다. 따라서, 본 발명에 따른 유기 EL 소자는 발광효율, 휘도, 전력효율, 구동전압 및 수명 면에서 우수한 특성을 나타낼 수 있어 풀 칼라 디스플레이 패널 등에 효과적으로 적용될 수 있다.When the organic light emitting compound according to the present invention is adopted as a phosphorescent or fluorescent host material of an organic EL device, energy transfer from the host to the dopant can be smoothly performed as compared with the conventional light emitting material. Therefore, the organic EL device according to the present invention can exhibit excellent characteristics in terms of luminous efficiency, brightness, power efficiency, driving voltage and lifetime, and thus can be effectively applied to a full color display panel.
본 발명은 인광 호스트로서의 특성을 충분히 발휘하지 못하는 트리페닐렌과 같은 정공(hole) 제공 화합물 모이어티(moiety)를, 링커(L)를 통하거나 직접적인 결합을 통해 전자 제공능이 우수한 펜아진(phenazine) 계열의 화합물 모이어티(moiety)에 연결하여 충분히 높은 삼중항 에너지 레벨을 달성하는 화학식 1의 유기발광 화합물을 포함함으로써 인광특성을 개선함과 동시에 전자(electron) 및/또는 정공(hole) 수송 능력, 발광효율, 구동전압, 수명 특성 등에서 개선된 유기 EL 소자를 제공한다. The present invention provides a phenazine having excellent electron donating ability through a linker (L) or a hole-providing compound moiety such as triphenylene, which does not sufficiently exhibit its characteristics as a phosphorescent host. Incorporating an organic light emitting compound of formula (I) that connects to a series of compound moieties to achieve a sufficiently high triplet energy level, thereby improving phosphorescence properties and simultaneously providing electron and / or hole transport capabilities, Provided is an organic EL device having improved luminous efficiency, driving voltage, lifetime, and the like.
본 발명의 유기 EL 소자에 있어서, 화학식 1의 화합물은, X가 N, S 또는 O이고; A가 치환 또는 비치환된, 핵원자수 6 내지 40의, 모노사이클릭 (monocyclic) 또는 축합 폴리사이클릭(fused polycyclic) 헤테로환(heterocycle)을 의미하되, 적어도 X-함유 고리는 핵원자수 6 내지 8의 방향족 고리인 화합물이다. In the organic EL device of the present invention, the compound of formula (1) is a compound wherein X is N, S or O; A monocyclic or fused polycyclic heterocycle having 6 to 40 nuclear atoms, wherein A is substituted or unsubstituted, wherein at least the X-containing ring is 6 nuclear atoms To 8 is an aromatic ring.
R1 내지 R10은 각각 독립적으로 수소, 중수소, 치환 또는 비치환된 C1-C40 알킬, 치환 또는 비치환된 C2-C40 알케닐, 치환 또는 비치환된 C2-C40 알키닐, 치환 또는 비치환된 C5-C40 아릴, 치환 또는 비치환된 핵원자수 5 내지 40의 헤테로아릴, 치환 또는 비치환된 C5-C40 아릴옥시, 치환 또는 비치환된 C1-C40 알킬옥시, 치환 또는 비치환된 C5-C40 아릴아미노, 치환 또는 비치환된 C5-C40 디아릴아미노, (치환 또는 비치환된 C6-C40 아릴)C1-C40 알킬, 치환 또는 비치환된 C3-C40 사이클로알킬 또는 치환 또는 비치환된 핵원자수 3 내지 40의 헤테로사이클로알킬이며, R5 및 R6은 연결되어 축합고리를 형성할 수 있다.R 1 to R 10 are each independently hydrogen, deuterium, substituted or unsubstituted C1-C40 alkyl, substituted or unsubstituted C2-C40 alkenyl, substituted or unsubstituted C2-C40 alkynyl, substituted or unsubstituted C5-C40 aryl, substituted or unsubstituted heteroaryl having 5 to 40 nuclear atoms, substituted or unsubstituted C5-C40 aryloxy, substituted or unsubstituted C1-C40 alkyloxy, substituted or unsubstituted C5-C40 Arylamino, substituted or unsubstituted C5-C40 diarylamino, (substituted or unsubstituted C6-C40 aryl) C1-C40 alkyl, substituted or unsubstituted C3-C40 cycloalkyl, or substituted or unsubstituted nucleus 3 to 40 heterocycloalkyl, R 5 and R 6 may be linked to form a condensed ring.
R1 내지 R10의 알킬, 알케닐, 알키닐, 아릴, 헤테로아릴, 아릴옥시, 알킬옥시, 아릴아미노, 디아릴아미노, 아릴알킬, 사이클로알킬 및 헤테로사이클로알킬은 각각 독립적으로 중수소, 할로겐, 아미노, 니트릴, 니트로, C1-C40 알킬, C2-C40 알케닐, C1-C40 알콕시, C3-C40 사이클로알킬, 핵원자수 3 내지 40의 헤테로사이클로알킬, C6-C40 아릴 및 핵원자수 5 내지 40의 헤테로아릴로 구성된 군으로부터 선택된 1 이상의 치환기로 치환될 수 있다. Alkyl, alkenyl, alkynyl, aryl, heteroaryl, aryloxy, alkyloxy, arylamino, diarylamino, arylalkyl, cycloalkyl and heterocycloalkyl of R 1 to R 10 are each independently deuterium, halogen, amino , Nitrile, nitro, C1-C40 alkyl, C2-C40 alkenyl, C1-C40 alkoxy, C3-C40 cycloalkyl, heterocycloalkyl of 3 to 40 nuclear atoms, C6-C40 aryl and 5 to 40 nuclear atoms It may be substituted with one or more substituents selected from the group consisting of heteroaryl.
본 발명의 화학식 1의 대표적인 화합물은 하기 화학식 1a 또는 1b의 화합물일 수 있다:Representative compounds of Formula 1 of the present invention may be compounds of Formula 1a or 1b:
<화학식 1a><Formula 1a>
<화학식 1b><Formula 1b>
상기 식에서,Where
A, X, R1 내지 R10은 앞서 정의된 바와 같고;A, X, R 1 to R 10 are as defined above;
R11 내지 R21은 R1 내지 R10의 정의와 같으며;R 11 to R 21 are as defined in R 1 to R 10 ;
L은 직접 결합, 치환 또는 비치환된 C6-C40의 아릴 또는 치환 또는 비치환된 핵원자수 6 내지 40의 헤테로아릴이며, 예를 들면 페닐, 바이페닐(biphenyl), 터페닐(terphenyl), 나프틸(naphthyl), 안트라센닐(anthracenyl), 페난트릴(phenanthryl), 피레닐(pyrenyl), 플루오레닐(fluorenyl), 카바졸일(carbazolyl), N-카바졸페닐, 퀴놀리닐(quinolinyl), 이소퀴놀리닐(isoquinolinyl) 등일 수 있다.L is a direct bond, substituted or unsubstituted C6-C40 aryl or substituted or unsubstituted heteroaryl having 6 to 40 nuclear atoms, for example phenyl, biphenyl, terphenyl, naph Naphthyl, anthracenyl, phenanthryl, pyrenyl, fluorenyl, carbazolyl, N-carbazolephenyl, quinolinyl, iso Quinolinyl, and the like.
상기 링커 L의 아릴 및 헤테로아릴은 각각 독립적으로 중수소, C1-C40 알킬, C3-C40 사이클로알킬, C2-C40 알케닐, C1-C40 알콕시, C1-C40 알킬아미노, C6-C40 아릴 및 핵원자수 5 내지 40의 헤테로아릴로 구성된 군으로부터 선택되는 1 이상의 치환기로 치환될 수 있으며, 이러한 치환기는 인접하는 기와 스피로 결합을 이루거나 핵원자수 6 내지 40의 지방족, 방향족, 헤테로지방족 또는 헤테로방향족의 축합 고리를 형성할 수 있다.The aryl and heteroaryl of the linker L are each independently deuterium, C1-C40 alkyl, C3-C40 cycloalkyl, C2-C40 alkenyl, C1-C40 alkoxy, C1-C40 alkylamino, C6-C40 aryl and the number of nuclear atoms It may be substituted with one or more substituents selected from the group consisting of 5 to 40 heteroaryl, such substituents form spiro bonds with adjacent groups or condensation of aliphatic, aromatic, heteroaliphatic or heteroaromatics of 6 to 40 nuclear atoms. May form a ring.
또한, 상기 링커 L의 치환기인, 알킬, 사이클로알킬, 알케닐, 알콕시,알킬아미노, 아릴 및 헤테로아릴은 각각 독립적으로 중수소, 할로겐, 아미노, 니트릴, 니트로, C1-C40 알킬, C2-C40 알케닐, C1-C40 알콕시, C3-C40 사이클로알킬, 핵원자수 3 내지 40의 헤테로사이클로알킬, C6-C40 아릴 및 핵원자수 5 내지 40의 헤테로아릴로 구성된 군으로부터 선택된 1 이상의 치환기로 추가적으로 치환될 수 있다.In addition, the substituents of the linker L, alkyl, cycloalkyl, alkenyl, alkoxy, alkylamino, aryl and heteroaryl are each independently deuterium, halogen, amino, nitrile, nitro, C1-C40 alkyl, C2-C40 alkenyl , C1-C40 alkoxy, C3-C40 cycloalkyl, heterocycloalkyl having 3 to 40 nuclear atoms, C6-C40 aryl and heteroaryl having 5 to 40 nuclear atoms may be further substituted with one or more substituents. have.
비제한적인 예로, 상기 링커 L은 하기 화학식 2의 구조식으로 이루어진 군에서 선택되는 C6-C40 아릴 또는 핵원자수 6 내지 40의 헤테로아릴인 것이 바람직하다.As a non-limiting example, the linker L is preferably C6-C40 aryl or heteroaryl having 6 to 40 nuclear atoms selected from the group consisting of the following Chemical Formula 2.
상기 식에서,Where
k, m 및 n은 각각 독립적으로 1 내지 3 범위의 정수이고; k, m and n are each independently integers ranging from 1 to 3;
복수의 Q1은 서로 같거나 상이하며, 복수의 Q2는 서로 같거나 상이하며, 복수의 Q3는 서로 같거나 상이하며; The plurality of Q 1 are the same or different from each other, the plurality of Q 2 are the same or different from each other, and the plurality of Q 3 are the same or different from each other;
Q1, Q2 및 Q3는 서로 같거나 상이하고, 각각 독립적으로 수소; 중수소; 치환 또는 비치환된 C1-C40 알킬; 치환 또는 비치환된 C3-C40 사이클로알킬; 치환 또는 비치환된 C2-C40 알케닐; 치환 또는 비치환된 C1-C40 알콕시; 치환 또는 비치환된 C1-C40 알킬아미노; 치환 또는 비치환된 C6-C40 아릴; 또는 치환 또는 비치환된 핵원자수 5 내지 40의 헤테로아릴이며 이들 치환기는 인접하는 기와 핵원자수 6 내지 40의 지방족, 방향족, 헤테로지방족 또는 헤테로방향족의 축합 고리를 형성할 수 있다.Q 1 , Q 2 and Q 3 are the same as or different from each other, and each independently hydrogen; heavy hydrogen; Substituted or unsubstituted C1-C40 alkyl; Substituted or unsubstituted C3-C40 cycloalkyl; Substituted or unsubstituted C2-C40 alkenyl; Substituted or unsubstituted C1-C40 alkoxy; Substituted or unsubstituted C1-C40 alkylamino; Substituted or unsubstituted C6-C40 aryl; Or a substituted or unsubstituted heteroaryl having 5 to 40 nuclear atoms, and these substituents may form a condensed ring of an aliphatic, aromatic, heteroaliphatic or heteroaromatic having adjacent groups with 6 to 40 nuclear atoms.
상기 알킬, 사이클로알킬, 알케닐, 알콕시, 알킬아미노, 아릴 및 헤테로아릴은 각각 독립적으로 중소수, 할로겐, 아미노, 니트릴, 니트로, C1-C40 알킬, C2-C40 알케닐, C1-C40 알콕시, C3-C40 사이클로알킬, C3-C40 헤테로사이클로알킬, C6-C40 아릴 및 핵원자수 5 내지 40의 헤테로아릴기로 이루어진 군에서 선택되는 하나 이상의 치환기로 치환될 수도 있다.The alkyl, cycloalkyl, alkenyl, alkoxy, alkylamino, aryl and heteroaryl are each independently selected from small to medium, halogen, amino, nitrile, nitro, C1-C40 alkyl, C2-C40 alkenyl, C1-C40 alkoxy, C3 It may also be substituted with one or more substituents selected from the group consisting of -C40 cycloalkyl, C3-C40 heterocycloalkyl, C6-C40 aryl and heteroaryl groups having 5 to 40 nuclear atoms.
하기 화학식들은 본 발명의 화학식 1의 화합물의 대표적인 예들이나, 본 발명의 화합물이 하기 예시된 것들에 한정되는 것은 아니다.The following formulas are representative examples of the compound of formula 1 of the present invention, but the compounds of the present invention are not limited to those illustrated below.
본 발명에서 사용된 “비치환된 헤테로환(heterocycle)”은 핵원자수 6 내지 40의 방향족 또는 비-방향족 고리를 의미하며, 고리 중 하나 이상의 탄소, 바람직하게는 1 내지 3개의 탄소가 N, O 또는 S와 같은 헤테로원자로 치환된다. 헤테로환의 비-제한적인 예로는 3-1H-벤즈이미다졸-2-온, 2-테트라히드로퓨라닐, 2-테트라히드로티오페닐, 2-모르폴리닐, 3-모르폴리닐, 1-피롤리디닐, 1-피페라지닐, 2-피페라지닐, 4-티아졸리디닐, 벤족사닐(benzoxanyl), 벤조피롤리디닐(benzopyrrolidinyl), 벤조피페리디닐(benzopiperidinyl), 벤조티아닐(benzothianyl) 등이 포함된다. 나아가, 본원에서 사용된 헤테로환은 하나 이상의 방향족 또는 비-방향족 고리와 축합된 것도 포함하는 것으로 해석한다. 헤테로환의 하나 이상의 수소 원자는 중수소; C1-C40 알킬; C3-C40 사이클로알킬; C2-C40 알케닐; C1-C40 알콕시; C1-C40 알킬아미노; C6-C40 아릴; 또는 핵원자수 5 내지 40의 헤테로아릴로 치환될 수 있으며, 상기 알킬, 사이클로알킬, 알케닐, 알콕시, 알킬아미노, 아릴 및 헤테로아릴은 각각 독립적으로 중수소, 할로겐, 아미노, 니트릴, 니트로, C1-C40 알킬, C2-C40 알케닐, C1-C40 알콕시, C3-C40 사이클로알킬, C3-C40 헤테로사이클로알킬, C6-C40 아릴 및 핵원자수 5 내지 40의 헤테로아릴기로 이루어진 군에서 선택되는 하나 이상의 치환기로 치환될 수도 있다.As used herein, “unsubstituted heterocycle” means an aromatic or non-aromatic ring having 6 to 40 nuclear atoms, wherein at least one carbon in the ring, preferably 1 to 3 carbons is N, Substituted with a heteroatom such as O or S. Non-limiting examples of heterocycles include 3-1H-benzimidazol-2-one, 2-tetrahydrofuranyl, 2-tetrahydrothiophenyl, 2-morpholinyl, 3-morpholinyl, 1-pyrroli Dinyl, 1-piperazinyl, 2-piperazinyl, 4-thiazolidinyl, benzoxanyl, benzopyrrolidinyl, benzopiperidinyl, benzothianyl, etc. This includes. Furthermore, the heterocycles used herein are to be understood to include those condensed with one or more aromatic or non-aromatic rings. At least one hydrogen atom of the heterocycle is deuterium; C1-C40 alkyl; C3-C40 cycloalkyl; C2-C40 alkenyl; C1-C40 alkoxy; C1-C40 alkylamino; C6-C40 aryl; Or heteroaryl having 5 to 40 nuclear atoms, and the alkyl, cycloalkyl, alkenyl, alkoxy, alkylamino, aryl and heteroaryl are each independently deuterium, halogen, amino, nitrile, nitro, C1- One or more substituents selected from the group consisting of C40 alkyl, C2-C40 alkenyl, C1-C40 alkoxy, C3-C40 cycloalkyl, C3-C40 heterocycloalkyl, C6-C40 aryl and heteroaryl groups having 5 to 40 nuclear atoms It may be substituted with.
“비치환된 헤테로사이클로알킬”은 핵원자수 3 내지 40의 비-방향족 부위를 의미하며, 고리 중 하나 이상의 탄소, 바람직하게는 1 내지 3개의 탄소가 N, O 또는 S와 같은 헤테로 원자로 치환된다. 이의 비-제한적인 예로는 모르폴린, 피페라진 등이 있다. “Unsubstituted heterocycloalkyl” means a non-aromatic moiety having 3 to 40 nuclear atoms, in which one or more carbons in the ring, preferably 1 to 3 carbons, are replaced with a hetero atom such as N, O or S . Non-limiting examples thereof include morpholine, piperazine and the like.
“비치환된 헤테로아릴”은 핵원자수 5 내지 40의 모노헤테로사이클릭 또는 폴리헤테로사이클릭 방향족 부위를 의미하며, 고리 중 하나 이상의 탄소, 바람직하게는 1 내지 3개의 탄소가 N, O 또는 S와 같은 헤테로원자로 치환된다. 2 이상의 고리가 서로 단순 부착(pendant)되거나 축합된(fused) 형태로 부착될 수 있고, 나아가 아릴기와의 축합된 형태도 포함하는 것으로 해석한다. 헤테로아릴의 예로는 피리딜, 피라지닐, 피리미디닐, 피리다지닐, 트리아지닐과 같은 6-원 모노사이클릭 고리; 페녹사티에닐(phenoxathienyl), 인돌리지닐(indolizinyl), 인돌릴(indolyl), 퓨리닐(purinyl), 퀴놀릴(quinolyl), 벤조티아졸(benzothiazole), 카바졸릴(carbazolyl)과 같은 폴리사이클릭 고리를 포함하고, 2-퓨라닐, N-이미다졸릴, 2-이속사졸릴, 2-피리디닐, 2-피리미디닐 등도 포함하는 것으로 해석한다. “Unsubstituted heteroaryl” means a monoheterocyclic or polyheterocyclic aromatic moiety having 5 to 40 nuclear atoms, wherein at least one carbon in the ring, preferably 1 to 3 carbons, is N, O or S And substituted with a heteroatom such as It is understood that two or more rings may be attached in a simple or fused form to each other and further include a condensed form with an aryl group. Examples of heteroaryl include 6-membered monocyclic rings such as pyridyl, pyrazinyl, pyrimidinyl, pyridazinyl, triazinyl; Polycyclics such as phenoxathienyl, indolinzinyl, indolyl, purinyl, quinolyl, benzothiazole, carbazolyl It is understood to include a ring and to include 2-furanyl, N-imidazolyl, 2-isoxazolyl, 2-pyridinyl, 2-pyrimidinyl, and the like.
본 발명의 화학식 1의 화합물은 일반적인 합성방법에 따라 합성될 수 있다 (Macromoluecules, 38: 1131~1140 (2005); Organic Letters, 7: 4843~4846 (2005); J.Med.Chem, 44: 594~601 (2001); Chem Mater, 16: 5387~5393 (2004) 등 참조). 본 발명의 화합물에 대한 상세한 합성 과정은 후술하는 합성예에서 구체적으로 기술하도록 한다.Compounds of formula 1 of the present invention can be synthesized according to general synthetic methods (Macromoluecules, 38: 1131-1140 (2005); Organic Letters, 7: 4843-4846 (2005); J. Med. Chem, 44: 594 601 (2001); Chem Mater, 16: 5387-5393 (2004) et al.). Detailed synthesis procedures for the compounds of the present invention will be described in detail in the synthesis examples described below.
본 발명에 따른 유기 EL 소자는, 양극(anode); 음극(cathode); 및 상기 양극과 음극 사이에 개재(介在)된 1층 이상의 유기층을 포함하며, 상기 1층 이상의 유기층 중 적어도 하나는 상기 화학식 1로 표시되는 화합물을 포함하는 것을 특징으로 한다. An organic EL device according to the present invention comprises: an anode; Cathode; And at least one organic layer interposed between the anode and the cathode, wherein at least one of the at least one organic layer includes a compound represented by Chemical Formula 1.
상기 화학식 1의 화합물은 단독 또는 복수로 포함될 수 있다.The compound of Formula 1 may be included alone or in plurality.
본 발명의 화학식 1의 화합물을 포함하는 유기층은 정공주입층, 정공수송층, 전자수송층 및 발광층 중 어느 하나 이상일 수 있다. 본 발명에서 발광층은 인광 도판트 재료 또는 형광 도판트 재료를 포함할 수 있다. 바람직하게는, 본 발명의 화학식 1의 화합물은 청색, 녹색, 및/또는 적색의 인광 호스트, 형광 호스트, 정공수송 물질, 정공주입 물질 및/또는 전자수송물질로서 유기 EL 소자에 포함될 수 있다. 보다 바람직하게는 본 발명의 화학식 1의 화합물은 인광 호스트로서 유기 EL 소자에 포함될 수 있다.The organic layer including the compound of Formula 1 of the present invention may be any one or more of a hole injection layer, a hole transport layer, an electron transport layer and a light emitting layer. In the present invention, the light emitting layer may include a phosphorescent dopant material or a fluorescent dopant material. Preferably, the compound of formula 1 of the present invention may be included in the organic EL device as a blue, green, and / or red phosphorescent host, a fluorescent host, a hole transport material, a hole injection material and / or an electron transport material. More preferably, the compound of formula 1 of the present invention may be included in the organic EL device as a phosphorescent host.
본 발명의 화합물은 높은 유리 전이 온도를 가지고 있어, 이러한 화합물을 유기 EL 소자의 유기층으로 사용할 경우 유기 EL 소자 내에서 결정화가 최소화되기 때문에 소자의 구동전압을 낮출 수 있고, 발광효율, 휘도, 열적 안정성, 및 수명 특성을 개선할 수 있다.Since the compound of the present invention has a high glass transition temperature, when the compound is used as the organic layer of the organic EL device, the crystallization is minimized in the organic EL device, so that the driving voltage of the device can be lowered, and the luminous efficiency, luminance, and thermal stability , And lifespan characteristics can be improved.
본 발명에 따른 유기 EL 소자 구조의 비제한적인 예를 들면, 기판, 양극, 정공 주입층, 정공 수송층, 발광층, 전자 수송층 및 음극이 순차적으로 적층된 것일 수 있으며, 이때 상기 발광층, 정공주입층, 정공수송층 및 전자수송층 중 하나 이상은 상기 화학식 1로 표시되는 화합물을 포함할 수 있다. 상기 전자 수송층 위에는 전자 주입층이 위치할 수도 있다.As a non-limiting example of the organic EL device structure according to the present invention, a substrate, an anode, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer and a cathode may be sequentially stacked, wherein the light emitting layer, hole injection layer, At least one of the hole transport layer and the electron transport layer may include a compound represented by Chemical Formula 1. An electron injection layer may be positioned on the electron transport layer.
또한, 본 발명에 따른 유기 EL 소자는 전술한 바와 같이 양극, 1층 이상의 유기층 및 음극이 순차적으로 적층된 구조뿐만 아니라, 전극과 유기층 계면에 절연층 또는 접착층이 삽입될 수도 있다.In addition, as described above, the organic EL device according to the present invention may not only have a structure in which an anode, at least one organic layer, and a cathode are sequentially stacked, but an insulating layer or an adhesive layer may be inserted at the interface between the electrode and the organic layer.
본 발명의 유기 EL 소자에 있어서, 상기 화학식 1의 화합물을 포함하는 상기 유기층은 진공 증착이나 용액 도포에 의하여 형성될 수 있다. 상기 용액 도포의 예 로는 스핀 코팅, 딥코팅, 닥터 블레이딩, 잉크젯 프린팅 또는 열 전사법 등이 있으나, 이들에만 한정되지 않는다. In the organic EL device of the present invention, the organic layer including the compound of Formula 1 may be formed by vacuum deposition or solution coating. Examples of the solution application include spin coating, dip coating, doctor blading, inkjet printing or thermal transfer method, but is not limited thereto.
본 발명의 유기 EL 소자는, 유기층 중 1층 이상을 본 발명의 화학식 1로 표현된 화합물을 포함하도록 형성하는 것을 제외하고는, 당 기술 분야에 알려져 있는 재료 및 방법을 이용하여 유기층 및 전극을 형성할 수 있다.The organic EL device of the present invention forms an organic layer and an electrode using materials and methods known in the art, except that at least one of the organic layers is formed to include the compound represented by the formula (1) of the present invention. can do.
예컨대, 기판으로는 실리콘 웨이퍼, 석영, 유리판, 금속판, 플라스틱 필름이나 시트 등이 사용될 수 있다.For example, a silicon wafer, quartz, glass plate, metal plate, plastic film or sheet may be used as the substrate.
양극 물질로는 바나듐, 크롬, 구리, 아연, 금과 같은 금속 또는 이들의 합금; 아연산화물, 인듐산화물, 인듐 주석 산화물(ITO), 인듐 아연 산화물(IZO)과 같은 금속 산화물; ZnO:Al 또는 SnO2:Sb와 같은 금속과 산화물의 조합물; 폴리티오펜, 폴리(3-메틸티오펜), 폴리[3,4-(에틸렌-1,2-디옥시)티오펜](PEDT), 폴리피롤 및 폴리아닐린과 같은 전도성 고분자; 또는 카본블랙 등이 있으나, 이들에만 한정되는 것은 아니다.The anode material may be a metal such as vanadium, chromium, copper, zinc, gold or an alloy thereof; Metal oxides such as zinc oxide, indium oxide, indium tin oxide (ITO), indium zinc oxide (IZO); Combinations of oxides with metals such as ZnO: Al or SnO 2 : Sb; Conductive polymers such as polythiophene, poly (3-methylthiophene), poly [3,4- (ethylene-1,2-dioxy) thiophene] (PEDT), polypyrrole and polyaniline; Or carbon black, but is not limited thereto.
음극 물질로는 마그네슘, 칼슘, 나트륨, 칼륨, 타이타늄, 인듐, 이트륨, 리튬, 가돌리늄, 알루미늄, 은, 주석 또는 납과 같은 금속 또는 이들의 합금; LiF/Al 또는 LiO2/Al과 같은 다층 구조 물질 등이 있으나, 이들에만 한정되는 것은 아니다.Cathode materials include metals such as magnesium, calcium, sodium, potassium, titanium, indium, yttrium, lithium, gadolinium, aluminum, silver, tin or lead or alloys thereof; Multilayer structure materials such as LiF / Al or LiO 2 / Al, and the like, but are not limited thereto.
정공 주입층, 정공 수송층 및 전자전달층 및 전자 주입층은 특별히 한정되는 것은 아니며, 당 업계에 알려진 통상의 물질이 사용될 수 있다.The hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer are not particularly limited, and conventional materials known in the art may be used.
이하 본 발명을 실시예를 통하여 상세히 설명하면 다음과 같다. 단, 하기 실시예는 본 발명을 예시하는 것일 뿐 본 발명이 하기 실시예에 의해 한정되는 것은 아니다.Hereinafter, the present invention will be described in detail with reference to the following Examples. However, the following examples are merely to illustrate the present invention and the present invention is not limited by the following examples.
<< 합성예Synthetic example 1> 화합물 1> Compound InIn -4의 합성Synthesis of -4
<단계 1> 화합물 3의 합성<Step 1> Synthesis of Compound 3
화합물 1(10g, 1eq, 0.034mol), 화합물 2 (4.14g, 1.1eq, 0.038mol)을 1L 플라스크에 넣고 1-Butanol 500 ㎖를 첨가한 후 진한 황산 1 ㎖를 첨가하여 12시간 동안 환류 교반하였다. Compound 1 (10 g, 1 eq, 0.034 mol) and compound 2 (4.14 g, 1.1 eq, 0.038 mol) were added to a 1 L flask, 500 ml of 1-Butanol was added, and 1 ml of concentrated sulfuric acid was added thereto, followed by stirring under reflux for 12 hours. .
반응이 종결된 후 증류수 200 ㎖와 메틸렌클로라이드(MC) 300 ㎖로 세척 및 추출하였다. 용매를 제거한 후 생성된 고체를 컬럼 크로마토그래피로 정제하여 화합물 3(10.2g, 수율 82%)를 수득하였다. After completion of the reaction, the mixture was washed and extracted with 200 ml of distilled water and 300 ml of methylene chloride (MC). After removing the solvent, the resulting solid was purified by column chromatography to give compound 3 (10.2 g, 82% yield).
GC-Mass (이론치: 359.22g/mol, 측정치: 359g/mol)GC-Mass (Theoretical value: 359.22 g / mol, Measured value: 359 g / mol)
<단계 2> 화합물 4의 합성Step 2 Synthesis of Compound 4
상기 <단계 1>에서 합성한 화합물 3(10g, 1eq, 0.027mol) 500 ㎖를 플라스크에 넣고 THF 250 ㎖를 첨가한 후 반응기 온도를 -78℃로 냉각시켰다. 여기에 1.6M n-BuLi (21.3 ㎖, 1.2eq, 0.033mol)를 서서히 첨가한 다음 대략 1시간 동안 교반하였다. 500 ml of Compound 3 (10 g, 1eq, 0.027 mol) synthesized in the above <Step 1> was added to a flask, and 250 ml of THF was added thereto, and the reactor temperature was cooled to -78 ° C. 1.6M n-BuLi (21.3 mL, 1.2eq, 0.033mol) was slowly added thereto and stirred for approximately 1 hour.
반응 1시간 후에 Triisopropylborate (7.6 ㎖, 1.2eq, 0.033mol)를 첨가하고 반응기의 온도를 상온으로 상승시킨 후 약 12시간 교반하였다.After 1 hour of reaction, Triisopropylborate (7.6 mL, 1.2eq, 0.033mol) was added, and the temperature of the reactor was raised to room temperature, followed by stirring for about 12 hours.
반응이 종결된 후 반응 용액에 1N HCl 100 ㎖를 첨가하고 30분간 교반한 다음 에틸아세테이트(EA) 300 ㎖와 증류수 200 ㎖로 세척 및 추출하였다. 용매를 제거한 후 생성된 고체를 n-Hexane 200 ㎖와 혼합 교반하였다. 생성된 고체를 필터 여과하여 화합물 4(7.7g, 수율 88%)를 수득하였다. After completion of the reaction, 100 ml of 1N HCl was added to the reaction solution, stirred for 30 minutes, and washed with 300 ml of ethyl acetate (EA) and 200 ml of distilled water. After removing the solvent, the resulting solid was stirred with 200 ml of n-Hexane. The resulting solid was filtered to give compound 4 (7.7 g, yield 88%).
GC-Mass (이론치: 324.14g/mol, 측정치: 324g/mol)GC-Mass (Theoretical value: 324.14g / mol, Measured value: 324g / mol)
<단계 3> 화합물 <Step 3> Compound InIn -4의 합성Synthesis of -4
화합물 5(6.9g, 1eq, 0.017mol) 및 상기 <단계 2>에서 합성한 화합물 4(7g, 1.2eq, 0.021mol)를 플라스크에 넣고 Pd(PPh3)4 (0.39g, 0.02eq, 0.0003mol)를 첨가하였다. Toluene 250 ㎖ 및 2M K2CO3를 첨가한 다음 5시간 동안 환류 교반하였 다. Compound 5 (6.9g, 1eq, 0.017mol) and compound 4 (7g, 1.2eq, 0.021mol) synthesized in <Step 2> were placed in a flask and Pd (PPh3) 4 (0.39g, 0.02eq, 0.0003mol) Was added. 250 ml of Toluene and 2M K 2 CO 3 were added and then stirred at reflux for 5 hours.
반응이 종결된 후 MC 500 ㎖와 증류수 200 ㎖로 세척 및 추출한 다음, 용매를 제거한 후 생성된 고체를 컬럼 크로마토그래피로 정제하여 원하는 표제 화합물 In-4(7.4g, 수율 75%)를 수득하였다. After completion of the reaction, the resultant was washed and extracted with 500 ml of MC and 200 ml of distilled water, and then the solvent was removed, and the resulting solid was purified by column chromatography to obtain the title compound In-4 (7.4 g, yield 75%).
GC-Mass (이론치: 582.69g/mol, 측정치: 582g/mol)GC-Mass (Theoretical value: 582.69 g / mol, Measured value: 582 g / mol)
<< 합성예Synthetic example 2> 화합물 2> compound InIn -7의 합성Synthesis of -7
<단계 1> 화합물 2-3의 합성<Step 1> Synthesis of Compound 2-3
화합물 2-1(10g, 1eq, 0.034mol) 및 화합물 2-2(4.14g, 1.1eq, 0.038mol)을 1L 플라스크에 넣고 아세트산 500 ㎖를 첨가한 다음 12시간 동안 환류 교반하였다. Compound 2-1 (10 g, 1 eq, 0.034 mol) and compound 2-2 (4.14 g, 1.1 eq, 0.038 mol) were added to a 1 L flask and 500 ml of acetic acid was added, followed by stirring under reflux for 12 hours.
반응이 종결된 후 증류수 1L를 첨가한 다음 생성된 고체를 여과하여 MC에 모두 녹인 후 증류수 200 ㎖로 세척하였다. 용매를 제거한 다음 생성된 고체를 컬럼 크로마토그래피로 정제하여 화합물 2-3(10g, 수율 80%)를 수득하였다. After the reaction was completed, 1L of distilled water was added, and the produced solid was filtered and dissolved in MC, followed by washing with 200 ml of distilled water. The solvent was removed and the resulting solid was purified by column chromatography to give compound 2-3 (10 g, 80% yield).
GC-Mass (이론치: 361.23, 측정치: 361)GC-Mass (Theoretical value: 361.23, Measured value: 361)
<단계 2> 화합물 2-4의 합성Step 2 Synthesis of Compound 2-4
상기 <단계 1>에서 합성한 화합물 2-3(10g, 1eq, 0.027mol)을 500 ㎖ 플라스크에 넣고 여기에 THF 250 ㎖를 첨가하였다. 반응기 온도를 -78℃로 냉각시킨 후 여기에 1.6M n-BuLi (21.3 ㎖, 1.2eq, 0.033mol)를 서서히 첨가하고 대략 1시간 동안 교반하였다. Compound 2-3 (10 g, 1 eq, 0.027 mol) synthesized in the above <Step 1> was placed in a 500 mL flask, and 250 mL of THF was added thereto. After cooling the reactor temperature to -78 ° C, 1.6M n-BuLi (21.3 mL, 1.2eq, 0.033mol) was slowly added thereto and stirred for approximately 1 hour.
반응 1시간 후, 반응기에 Triisopropylborate(7.6 ㎖, 1.2eq, 0.033mol)를 첨가하고 반응기의 온도를 상온으로 상승시킨 후 약 12시간 동안 교반하였다. After 1 hour of reaction, Triisopropylborate (7.6 mL, 1.2eq, 0.033mol) was added to the reactor, and the temperature of the reactor was raised to room temperature, followed by stirring for about 12 hours.
반응이 종결된 후 반응 용액에 1N HCl 100 ㎖를 첨가하고 30분간 교반하였다. EA 300 ㎖와 증류수 200 ㎖로 세척 및 추출한 다음, 용매를 제거하여 얻어진 고체를 n-Hexane 200 ㎖와 혼합 교반하였다. 생성된 고체를 필터 여과하여 화합물 2-4(7.6g, 수율 87%)를 수득하였다. After the reaction was completed, 100 ml of 1N HCl was added to the reaction solution, which was stirred for 30 minutes. After washing and extraction with 300 ml of EA and 200 ml of distilled water, the solvent was removed, and the solid obtained by stirring was mixed with 200 ml of n-Hexane. The resulting solid was filtered to give compound 2-4 (7.6 g, yield 87%).
GC-Mass (이론치: 326.16g/mol, 측정치: 326g/mol)GC-Mass (Theoretical value: 326.16 g / mol, Measured value: 326 g / mol)
<단계 3> 화합물 <Step 3> Compound InIn -7의 합성Synthesis of -7
화합물 2-5(6.9g, 1eq, 0.017mol) 및 상기 <단계 2>에서 합성한 화합물 2-4(7g, 1.2eq, 0.021mol)를 플라스크에 넣고 Pd(PPh3)4 (0.39g, 0.02eq, 0.0003mol) 를 첨가하였다. Toluene 250 ㎖ 및 2M K2CO3를 첨가한 다음 5시간 동안 환류 교반하였다. Compound 2-5 (6.9g, 1eq, 0.017mol) and compound 2-4 (7g, 1.2eq, 0.021mol) synthesized in step <2> were placed in a flask, and Pd (PPh3) 4 (0.39g, 0.02eq , 0.0003 mol) was added. 250 ml Toluene and 2M K 2 CO 3 were added and then stirred at reflux for 5 hours.
반응이 종결된 후 MC 500 ㎖와 증류수 200 ㎖로 세척 및 추출한 다음, 용매를 제거한 후 생성된 고체를 컬럼 크로마토그래피로 정제하여 원하는 표제 화합물 In-4 (7.9g, 수율 80.1%)를 수득하였다. After completion of the reaction, the resultant was washed and extracted with 500 ml of MC and 200 ml of distilled water, and then the solvent was removed. The resulting solid was purified by column chromatography to obtain the title compound In-4 (7.9 g, yield 80.1%).
GC-Mass (이론치: 584.71g/mol, 측정치: 584g/mol)GC-Mass (Theoretical value: 584.71 g / mol, Measured value: 584 g / mol)
<< 합성예Synthetic example 3> 화합물 3> Compound InIn -12의 합성Synthesis of -12
상기 합성예 1과 동일한 방법을 수행하되, <단계 3>에서 화합물 12-1 6.8 g 및 Pd(PPh3)4 0.4 g을 사용하여 표제 화합물 In-12(7.8g, 수율 75% 를 수득하였다. The same method as in Synthesis Example 1 was conducted, but using 6.8 g of Compound 12-1 and 0.4 g of Pd (PPh 3) 4 in <Step 3>, the title compound In-12 (7.8 g, yield 75%) was obtained.
GC-Mass (이론치: 582.69g/mol, 측정치: 582g/mol)GC-Mass (Theoretical value: 582.69 g / mol, Measured value: 582 g / mol)
<< 합성예Synthetic example 4> 화합물 4> Compound InIn -14의 합성Synthesis of -14
상기 합성예 2와 동일한 방법을 수행하되, <단계 3>에서 화합물 14-2(7.2g, 1eq, 0.018mol), 화합물 2-4(7.5g, 1.2eq, 0.022mol) 및 Pd(PPh3)4 (0.41g, 0.02eq, 0.0003mol)를 사용하여 표제 화합물 In-14(8.4g, 수율 82.6%)를 수득하였다. Perform the same method as in Synthesis Example 2, except that in Step 3, Compound 14-2 (7.2 g, 1 eq, 0.018 mol), Compound 2-4 (7.5 g, 1.2 eq, 0.022 mol), and Pd (PPh 3) 4 (0.41 g, 0.02eq, 0.0003 mol) was used to give the title compound In-14 (8.4 g, yield 82.6%).
GC-Mass (이론치: 584.71g/mol, 측정치: 584g/mol)GC-Mass (Theoretical value: 584.71 g / mol, Measured value: 584 g / mol)
<< 합성예Synthetic example 5> 화합물 5> Compound InIn -25의 합성Synthesis of -25
상기 합성예 1과 동일한 방법을 수행하되, <단계 3>에서 화합물 25-2(6g, 0.0112mol, 1eq), 화합물 4(4.35g, 0.0134mol, 1.2eq) 및 Pd(PPh3)4 (0.38g, 0.0003mol, 0.03eq)를 사용하여 표제 화합물 In-25(9.7g, 수율 85.4%)를 수득하였다. Perform the same method as in Synthesis Example 1, except that in Step 3, Compound 25-2 (6g, 0.0112mol, 1eq), Compound 4 (4.35g, 0.0134mol, 1.2eq), and Pd (PPh3) 4 (0.38g , 0.0003 mol, 0.03eq) gave the title compound In-25 (9.7 g, yield 85.4%).
GC-Mass (이론치: 734.88g/mol, 측정치: 734g/mol)GC-Mass (Theoretical value: 734.88 g / mol, Measured value: 734 g / mol)
<< 합성예Synthetic example 6> 화합물 6> Compound InIn -28의 합성Synthesis of -28
상기 합성예 1과 동일한 방법을 수행하되, <단계 3>에서 화합물 28-2(4.5g, 0.0109mol, 1eq), 화합물 4(4.23g, 0.013mol, 1.2eq) 및 Pd(PPh3)4 (0.35g, 0.00029mol, 0.03eq)를 사용하여 표제 화합물 In-28(8.2g, 수율 81.3%)을 수득하였다. Perform the same method as in Synthesis Example 1, except that in Step 3, Compound 28-2 (4.5 g, 0.0109 mol, 1 eq), Compound 4 (4.23 g, 0.013 mol, 1.2 eq), and Pd (PPh 3) 4 (0.35) g, 0.00029 mol, 0.03 eq) gave the title compound In-28 (8.2 g, yield 81.3%).
GC-Mass (이론치: 610.74g/mol, 측정치: 610g/mol)GC-Mass (Theoretical value: 610.74 g / mol, Measured value: 610 g / mol)
<< 합성예Synthetic example 7> 화합물 7> Compound InIn -31의 합성Synthesis of -31
상기 합성예 2와 동일한 방법을 수행하되, <단계 3>에서 화합물 28-2(4.5g, 0.0109 mol, 1eq), 화합물 2-4(4.21g, 0.013 mol, 1.2eq) 및 Pd(PPh3)4 (0.35g, 0.00029 mol, 0.03eq)를 사용하여 표제 화합물 In-31(7.9g, 수율 80.3%)을 수득하였다. Perform the same method as in Synthesis Example 2, except that in Step 3, Compound 28-2 (4.5 g, 0.0109 mol, 1eq), Compound 2-4 (4.21 g, 0.013 mol, 1.2eq), and Pd (PPh3) 4 (0.35 g, 0.00029 mol, 0.03 eq) was used to give the title compound In-31 (7.9 g, yield 80.3%).
GC-Mass (이론치: 610.74g/mol, 측정치: 610g/mol)GC-Mass (Theoretical value: 610.74 g / mol, Measured value: 610 g / mol)
<< 합성예Synthetic example 8> 화합물 8> Compound InIn -36의 합성Synthesis of -36
상기 합성예 1과 동일한 방법을 수행하되, <단계 3>에서 화합물 36-2(4.8g, 0.0125mol, 1eq), 화합물 4(4.86g, 0.015mol, 1.2eq) 및 Pd(PPh3)4 (0.43g, 0.00375mol, 0.03eq)를 사용하여 표제 화합물 In-36(8.4g, 수율 87.1%)를 수득하였다. Perform the same method as in Synthesis Example 1, except that in Step 3, Compound 36-2 (4.8 g, 0.0125 mol, 1 eq), Compound 4 (4.86 g, 0.015 mol, 1.2 eq), and Pd (PPh 3) 4 (0.43) g, 0.00375 mol, 0.03 eq) gave the title compound In-36 (8.4 g, yield 87.1%).
GC-Mass (이론치: 583.68g/mol, 측정치: 583g/mol)GC-Mass (Theoretical value: 583.68 g / mol, Measured value: 583 g / mol)
<< 합성예Synthetic example 9> 화합물 9> Compound InIn -38의 합성Synthesis of -38
상기 합성예 2와 동일한 방법을 수행하되, <단계 3>에서 화합물 38-2(4.2g, 0.0109mol, 1eq), 화합물 2-4(4.56g, 0.015mol, 1.2eq) 및 Pd(PPh3)4 (0.41g, 0.0035mol, 0.03eq)를 사용하여 표제 화합물 In-38(7.9g, 수율 80.2%)를 수득하였다. Perform the same method as in Synthesis Example 2, except that in Step 3, Compound 38-2 (4.2 g, 0.0109 mol, 1 eq), Compound 2-4 (4.56 g, 0.015 mol, 1.2 eq), and Pd (PPh 3) 4 (0.41 g, 0.0035 mol, 0.03 eq) was used to give the title compound In-38 (7.9 g, yield 80.2%).
GC-Mass (이론치: 612.76g/mol, 측정치: 612g/mol)GC-Mass (Theoretical value: 612.76 g / mol, Measured value: 612 g / mol)
[[ 실시예Example 1] 유기 1] organic ELEL 소자의 제조 Manufacture of device
ITO (Indium tin oxide)가 1500Å 두께로 박막 코팅된 유리 기판을 증류수 초음파로 세척하였다. 증류수 세척이 끝나면 이소프로필 알코올, 아세톤, 메탄올 등의 용제로 초음파 세척을 하고 건조시킨 후 플라즈마 세정기로 이송시킨 다음 산소 플라즈마를 이용하여 상기 기판을 5분간 세정한 후 진공 층착기로 기판을 이송하였다. A glass substrate coated with ITO (Indium tin oxide) having a thickness of 1500 Å was washed with distilled water ultrasonically. After washing the distilled water, ultrasonic cleaning with a solvent such as isopropyl alcohol, acetone, methanol and the like was dried and then transferred to a plasma cleaner, and then the substrate was cleaned for 5 minutes using an oxygen plasma, and then the substrate was transferred to a vacuum depositor.
이렇게 준비한 ITO (양극) 위에 DS-205(두산社)를 800Å 두께로 열 진공 증착하여 정공 주입층을 형성하고, 상기 정공 주입층 위에 정공 이송 물질인 a-NPB (N,N-di(naphthalene-1-yl)-N,N-diphenylbenzidine)을 150Å 두께로 진공 증착하였 다.The hole injection layer was formed by thermal vacuum deposition of DS-205 (Doosan Co., Ltd.) at a thickness of 800 kPa on the prepared ITO (anode), and a-NPB (N, N-di (naphthalene-), a hole transport material, was formed on the hole injection layer. 1-yl) -N, N-diphenylbenzidine) was vacuum deposited to 150 mm thick.
그 위에 상기 합성예 1에서 제조된 화합물 Inv-4 및 Ir(ppy)3를 300Å 두께로 진공 증착하여 발광층을 형성하고, 상기 발광층 위에 정공저지층 물질인 BCP를 200Å 두께로 형성한 다음 전자 수송 물질인 Alq3을 250Å 두께로 진공 증착하였다. 이 후, 전자 주입 물질인 LiF를 10Å 두께로 증착하고, 알루미늄 (음극)을 2000Å 두께로 진공 증착하여 하기 표 1과 같은 구조의 유기 EL 소자를 제작하였다.The compound Inv-4 and Ir (ppy) 3 prepared in Synthesis Example 1 were vacuum deposited to a thickness of 300 Å to form a light emitting layer, and a BCP, a hole blocking layer material, was formed to a thickness of 200 위에 on the light emitting layer, followed by an electron transporting material. Phosphorus Alq3 was vacuum deposited to a thickness of 250 mm 3. Subsequently, LiF, which is an electron injection material, was deposited to a thickness of 10 GPa, and aluminum (cathode) was vacuum deposited to a thickness of 2000 GPa to prepare an organic EL device having a structure as shown in Table 1 below.
[[ 실시예Example 2~8] 유기 2 ~ 8] organic ELEL 소자의 제조 Manufacture of device
발광층 형성시 합성예 1에서 제조된 화합물 In-4 대신 합성예 2-9에서 제조된 화합물을 사용한 것을 제외하고는, 실시예 1과 동일한 방법으로 유기 EL 소자를 제작하였다.An organic EL device was manufactured in the same manner as in Example 1, except that the compound prepared in Synthesis Example 2-9 was used instead of the compound In-4 prepared in Synthesis Example 1 to form an emission layer.
[[ 비교예Comparative example 1] 유기 1] organic ELEL 소자의 제조 Manufacture of device
발광층 형성시 상기 합성예에서 제조된 화합물 대신 녹색 인광 호스트로 주로 사용되는 호스트인 CBP를 사용한 것을 제외하고는, 실시예 1과 동일한 방법으로 유기 EL 소자를 제작하였다.An organic EL device was manufactured in the same manner as in Example 1, except that CBP, which is a host mainly used as a green phosphorescent host, was used instead of the compound prepared in Synthesis Example when forming an emission layer.
(HIL)Hole injection layer
(HIL)
(HTL)Hole transport layer
(HTL)
(EML)Light emitting layer
(EML)
(HBL)Hole blocking layer
(HBL)
(ETL)Electron transport layer
(ETL)
(EIL)Electron injection layer
(EIL)
cathode
[[ 평가예Evaluation example ]]
실시예 1-9 및 비교예 1에서 제작된 각각의 유기 EL 소자에 대하여 전류밀도 10 mA/㎠에서 측정된 발광 효율과, T=97 (9000nit)까지 측정된 시간(가속 수명)을 하기 표 2에 나타내었다.For each organic EL device fabricated in Example 1-9 and Comparative Example 1, the luminous efficiency measured at a current density of 10 mA / cm 2 and the time (accelerated life) measured up to T = 97 (9000 nits) are shown in Table 2 below. Shown in
상기 표 2를 살펴보면, 호스트 물질로서 본 발명에 따른 화합물을 사용한 유기 EL 소자는 종래 CBP를 사용한 유기 EL 소자보다 전압 및 효율 면에서 월등히 우수하며 특히 수명이 개선된 것을 확인할 수 있다. Looking at Table 2, it can be seen that the organic EL device using the compound according to the present invention as a host material is much better in terms of voltage and efficiency than the organic EL device using the conventional CBP, and especially the life is improved.
이상을 통해 본 발명의 바람직한 실시예에 대하여 설명하였지만, 본 발명은 이에 한정되는 것이 아니고 특허청구범위와 발명의 상세한 설명의 범위 안에서 여러 가지로 변형하여 실시하는 것이 가능하고 이 또한 본 발명의 범위에 속하는 것은 당연하다.Although the preferred embodiments of the present invention have been described above, the present invention is not limited thereto, and various modifications and changes can be made within the scope of the claims and the detailed description of the invention. It is natural to belong.
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JP2003040873A (en) * | 2001-07-25 | 2003-02-13 | Idemitsu Kosan Co Ltd | New quinoxaline derivative and organic electroluminescent element utilizing the same |
JP5072293B2 (en) * | 2005-09-12 | 2012-11-14 | 株式会社半導体エネルギー研究所 | Quinoxaline derivative, and light-emitting element, light-emitting device, and electronic device using quinoxaline derivative |
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US8314101B2 (en) * | 2007-11-30 | 2012-11-20 | Semiconductor Energy Laboratory Co., Ltd. | Quinoxaline derivative, and light-emitting element, light-emitting device, and electronic device using quinoxaline derivative |
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JP2016192553A (en) * | 2011-08-31 | 2016-11-10 | 株式会社半導体エネルギー研究所 | Light-emitting element including heterocyclic compound, light-emitting device, electronic apparatus, and lighting system |
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WO2020065443A1 (en) * | 2018-09-27 | 2020-04-02 | 株式会社半導体エネルギー研究所 | Light-emitting device, light-emitting apparatus, light-emitting module, electronics, lighting apparatus, organometallic complex, light-emitting material, organic compound, and dinuclear complex |
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WO2011081431A3 (en) | 2011-12-15 |
WO2011081431A2 (en) | 2011-07-07 |
KR101290011B1 (en) | 2013-07-30 |
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