KR20110071348A - Substrate for a display device and method of manufacturing the same - Google Patents

Abstract

PURPOSE: A substrate for a display device and a method of manufacturing the same are provided to improve the display quality by preventing the lowering of a switching element property. CONSTITUTION: A substrate(1000) for a display device comprises a base substrate(110) which has an ion mixed layer(111) in which alkali ion and a metal ion are mixed on the upper surface of a soda lime glass substrate and an electrode layer in which a voltage of a base substrate is applied. The soda lime glass substrate is composed of Na2O, CaO, and SiO2 in 13:12:70 ratio.

Description

Substrate for display device and method of manufacturing same {SUBSTRATE FOR A DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a display device substrate and a method for manufacturing the same, and more particularly, to a display device substrate and a method for manufacturing the same.

Recently, in order to reduce costs in display devices including liquid crystal display devices (LCDs), cheap soda lime silicate glass is used instead of expensive conventional alkali free glass.

Since the existing alkali free glass does not contain alkali ion, alkali ion did not penetrate into the metal wiring, semiconductor layer, etc. formed on the board | substrate which consists of said alkali free glass.

However, since soda-lime glass contains a considerable amount of alkali ions such as sodium (Na), potassium (K), and lime (Ca), the metal wiring and semiconductor layer are formed on the substrate made of the soda-lime glass. Diffuses and penetrates, etc., to change the resistance characteristics of the metal wirings and to deteriorate the TFT characteristics.

For example, the alkali ions penetrate into the a-Si layer of the TFT, deteriorating characteristics such as mobility, current, etc. of the a-Si layer, and the alkali ions penetrate into the dielectric, thereby reducing the dielectric constant. Therefore, the display device may be defective and the reliability of the product may be degraded.

In order to prevent the diffusion and penetration of the alkali ions, a barrier made of silicon nitride (SiNx) and silicon oxide (SiOx) by chemical vapor deposition (CVD) or coating (coating) on the surface of the soda lime glass substrate. A film is formed to prevent the diffusion of sodium ions (Na +).

In addition, sodium ions are removed by chemical etching on the surface of the soda lime glass substrate.

However, the formation of a barrier film or chemical etching on the soda-lime glass substrate still has a high probability of defects because it is difficult to sufficiently delay the time that sodium ions are eluted.

Accordingly, the technical problem of the present invention was conceived in this respect, and an object of the present invention is to provide a substrate for a display device that improves display characteristics.

Another object of the present invention is to provide a method of manufacturing the substrate for a display device.

In order to achieve the above object of the present invention, a substrate for a display device according to an embodiment includes a base substrate and an electrode layer. The base substrate has an ion mixed layer in which the alkali ions and the metal ions are mixed on the upper and lower surfaces of the soda lime glass substrate having alkali ions. The electrode layer is applied with a voltage formed on the base substrate.

In order to achieve the above object of the present invention, a method of manufacturing a substrate for a display device according to an embodiment is disclosed. In the method of manufacturing the display device substrate, a soda lime glass substrate having alkali ions is supported by a molten salt having metal ions. Alkali ions contained in the soda lime glass substrate are ion exchanged with metal ions contained in the molten salt to form a base substrate having an ion mixed layer. An electrode layer to which a voltage is applied is formed on the base substrate.

According to such a display device substrate and a method of manufacturing the same, by forming an ion mixed layer on a soda lime glass substrate, the compressive stress against external impact is increased, and the characteristics of the switching element formed on the soda lime glass substrate are degraded. Can be prevented.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the drawings. As the inventive concept allows for various changes and numerous embodiments, particular embodiments will be illustrated in the drawings and described in detail in the text. However, this is not intended to limit the present invention to the specific disclosed form, it should be understood to include all modifications, equivalents, and substitutes included in the spirit and scope of the present invention. Like reference numerals are used for like elements in describing each drawing. In the accompanying drawings, the dimensions of the structures are shown in an enlarged scale than actual for clarity of the invention. The terms first, second, etc. may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be referred to as the second component, and similarly, the second component may also be referred to as the first component. Singular expressions include plural expressions unless the context clearly indicates otherwise.

In this application, the terms "comprises", "having", and the like are used to specify that a feature, a number, a step, an operation, an element, a part or a combination thereof is described in the specification, But do not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof.

1 is a plan view of a panel for a display device according to an exemplary embodiment of the present invention.

Referring to FIG. 1, the display device panel 1000 according to the present exemplary embodiment may include a first display substrate 100, a second display substrate 200, a first touch substrate 400, and a second touch substrate 500. It includes.

The first display substrate 100 and the second display substrate 200 may include a display area DA and a peripheral area PA surrounding the display area DA. The data circuit part and the gate circuit part are formed in the peripheral area PA. A plurality of pixel parts P is formed in the display area DA. Each of the pixel units P may include a gate line GL, a data line DL crossing the gate line GL, a switching element TR connected to the gate line GL, and the data line DL, A liquid crystal capacitor CLC and a storage capacitor CST are electrically connected to the switching element TR.

FIG. 2 is a cross-sectional view taken along the line II of FIG. 1.

1 and 2, the panel 1000 for a display device according to the present exemplary embodiment may include a first display substrate 100, a second display substrate 200, a first touch substrate 400, and a second touch substrate ( 500). The display panel 1000 may further include a liquid crystal layer 300 and an adhesive part 600.

The first display substrate 100 includes a first base substrate 110, a switching element TR, and a pixel electrode 130. The first display substrate 100 may further include a gate insulating layer 140, an organic insulating layer 150, and an alignment layer 160. The switching element TR, the pixel electrode 130, the gate insulating layer 140, the organic insulating layer 150, and the first alignment layer 160 are formed on the first base substrate 110.

The first base substrate 110 is a soda lime glass substrate including sodium oxide (Na ₂ O), calcium oxide (CaO), and silicon dioxide (SiO ₂ ), wherein the first base substrate 110 is an ion mixed layer ( 111). The ratio of the sodium oxide (Na ₂ O), calcium oxide (CaO) and silicon dioxide (SiO ₂ ) included in the soda lime glass substrate may be, for example, 13:12:70. The first base substrate 110 contains alkali ions such as sodium ions (Na +) and lime ions (Ca +).

In the ion mixed layer 111, alkali ions such as sodium ions (Na +) and lime ions (Ca +), which are included in the first base substrate 110, are eluted to the outside, and thus, on the first base substrate 110. The degradation of the characteristics of the switching element TR, the data driver DCP and the gate driver GCP formed may be prevented.

The ion mixed layer 111 may include a first ion mixed layer ION1, a second ion mixed layer ION2, and an interlayer BT. The first ion mixed layer ION1 is formed on the upper surface of the first base substrate 110, and the switching element TR, the data driver DCP, and the gate driver GCP are directly formed. The second ion mixed layer ION2 is formed on the lower surface of the first base substrate 110 to face the first ion mixed layer ION1. The interlayer BT is disposed between the first ion mixed layer ION1 and the second ion mixed layer ION2 and is a layer in which ion exchange hardly occurs.

The switching element TR is formed on the first ion mixed layer ION1 of the first base substrate 110. The switching element TR is branched from the gate electrode 121 and the data line DL, branched from the gate line GL, and insulated from the gate electrode 121 by the gate insulating layer 140. The electrode 122 includes a drain electrode 123 and an active pattern 124 electrically connected to the pixel electrode 130. The active pattern 124 may include a semiconductor layer 125 and an ohmic contact layer 126 sequentially formed on the gate insulating layer 140.

The organic insulating layer 150 is formed on the first base substrate 110 on which the switching element TR is formed. A contact hole 151 is formed in the organic insulating layer 150 to electrically insulate the pixel electrode 130 from the switching element TR. The pixel electrode 130 is formed on the second base substrate 110 on which the organic insulating layer 150 on which the contact hole 151 is formed is formed.

The first alignment layer 160 is formed on the first base substrate 110 on which the pixel electrode 130 is formed.

The second display substrate 200 includes a second base substrate 210, a black matrix 220, a color filter 230, and a common electrode 240. The second display substrate 200 may further include an overcoat layer 250 and a second alignment layer 260. The black matrix 220, the color filter 230, the common electrode 240, the overcoat layer 250, and the second alignment layer 260 are formed on the second base substrate 210.

The second base substrate 210 is disposed to face the first base substrate 110. The second base substrate 220 is a soda lime glass substrate including sodium oxide (Na 2 O), calcium oxide (CaO), and silicon dioxide (SiO 2), and includes an ion mixed layer 211 therein. The ratio of the sodium oxide (Na 2 O), calcium oxide (CaO), and silicon dioxide (SiO 2) included in the second base substrate 220 may be, for example, 13:12:70. The first base substrate 110 contains alkali ions such as sodium ions (Na +), lime ions (Ca +), and the like.

The ion mixed layer 211 may include a first ion mixed layer ION1, a second ion mixed layer ION2, and an interlayer BT. The first ion mixed layer ION1 is formed on the upper surface of the second base substrate 210, and the black matrix 220 and the color filter 230 are directly formed. The second ion mixture layer ION2 is formed on the lower surface of the second base substrate 210 to face the first ion mixture layer ION1. The interlayer BT is disposed between the first ion mixed layer ION1 and the second ion mixed layer ION2 and is a layer in which ion exchange hardly occurs.

The black matrix 220 and the color filter 230 are formed on the first ion mixed layer ION1 of the second base substrate 210. The overcoat layer 240 is formed on the second base substrate 210 on which the black matrix 220 and the color filter 230 are formed, and the second base substrate 210 on which the overcoat layer 240 is formed. ) To form a common electrode 250. The common electrode 250 may be formed on the entire surface of the second base substrate 210 without a separate patterning process.

A second alignment layer 260 is formed on the second base substrate 210 on which the common electrode 250 is formed.

The first display substrate 100 is coupled to the second display substrate 200 such that the first alignment layer 160 faces the second alignment layer 260. The liquid crystal layer 300 is interposed between the first display substrate 100 and the second display substrate 200.

The first touch substrate 400 is disposed on the second display substrate 200. The first touch substrate 400 includes a third base substrate 410, a first touch electrode 420, and a wiring electrode 440. The first touch substrate 400 may further include a spacer 430. The first touch electrode 420 and the spacer 430 are formed on the third base substrate 410.

The third base substrate 410 includes an ion exchange layer 411 as a soda lime glass substrate including sodium oxide (Na 2 O), calcium oxide (CaO), and silicon dioxide (SiO 2). The ratio of the sodium oxide (Na 2 O), calcium oxide (CaO) and silicon dioxide (SiO 2) included in the soda lime glass substrate may be, for example, 13:12:70. Therefore, the third base substrate 410 contains alkali ions such as sodium ions (Na +) and lime ions (Ca +).

In the ion exchange layer 411, alkali ions such as sodium ions (Na +) and lime ions (Ca +), which are included in the third base substrate 410, are eluted to the outside to form an upper surface of the third base substrate 410. It is possible to prevent deterioration of the characteristics of the first touch electrode 420.

The ion exchange layer 411 may include a first ion exchange layer ION1, a second ion exchange layer ION2, and an interlayer BT. The first ion exchange layer ION1 is formed to have a predetermined depth from an upper surface of the third base substrate 410. The second ion exchange layer ION2 is formed on the lower surface of the third base substrate 410 to face the first ion exchange layer ION1. The interlayer BT is disposed between the first ion exchange layer ION1 and the second ion exchange layer ION2, and is a layer in which ion exchange hardly occurs.

The first touch electrodes 420 are arranged side by side in the first direction. The first touch electrode 420 may be formed in a stripe shape on the third base substrate 410. The first touch electrode 420 has a predetermined sheet resistance.

The second touch substrate 500 includes a fourth base substrate 510, a second touch electrode 520, and a wiring electrode 540. The second touch substrate 500 may further include a spacer (not shown). The second touch electrode 520 is formed on the fourth base substrate 510.

The fourth base substrate 510 includes an ion exchange layer 511 as a soda lime glass substrate including sodium oxide (Na 2 O), calcium oxide (CaO), and silicon dioxide (SiO 2). The ratio of the sodium oxide (Na 2 O), calcium oxide (CaO) and silicon dioxide (SiO 2) included in the soda lime glass substrate may be, for example, 13:12:70. The fourth base substrate 510 contains alkali ions such as sodium ions (Na +) and lime ions (Ca +).

In the ion exchange layer 511, alkali ions such as sodium ions (Na +) and lime ions (Ca +), which are included in the fourth base substrate 510, are eluted to the outside, and thus, are formed on the fourth base substrate 510. It is possible to prevent deterioration of the characteristics of the second touch electrode 520.

The ion exchange layer 511 may include a first ion exchange layer ION1, a second ion exchange layer ION2, and an interlayer BT. The first ion exchange layer ION1 is formed to have a predetermined depth from an upper surface of the fourth base substrate 510. The second ion exchange layer ION2 is formed on the lower surface of the fourth base substrate 510 to face the first ion exchange layer ION1. The interlayer BT is disposed between the first ion exchange layer ION1 and the second ion exchange layer ION2, and is a layer in which ion exchange hardly occurs.

The second touch electrodes 520 are arranged side by side in a second direction crossing the first direction. The second touch electrode 520 may be formed in a stripe shape on the fourth base substrate 510. The second touch electrode 520 has a sheet resistance.

The first touch substrate 400 is coupled by the second touch substrate 500 and the adhesive part 600 so that the first touch electrode 420 faces the second touch electrode 520.

Therefore, when the second touch substrate 500 is touched by a stylus pen or an external action, a second touch electrode 520 formed on the second touch substrate 500 is formed on the first touch substrate 400. In contact with the first touch electrode 420. When the first touch electrode 420 is in contact with the second touch electrode 520, a voltage drop is generated to calculate a position at which the first touch electrode 420 is in contact with the second touch electrode 520. do.

3A and 3B are cross-sectional views illustrating a method of manufacturing the base substrate of FIG. 2.

2 to 3B, a method of manufacturing the first to fourth base substrates 110 to 510 will be described.

3A illustrates a soda lime glass substrate 120 supported on molten salt 900. The soda lime glass substrate 120 is a raw material of the first to fourth base substrates 110 to 510.

The molten salt 900 includes metal ions. For example, the metal ions may be lithium ions (Li +), potassium ions (K +) or silver ions (Ag +). The molten salt 900 including the metal ions may be potassium nitrate (KNO ₃ ) and silver nitrate (AgNO ₃ ). In FIG. 3A, the molten salt 900 will contain potassium ions (K +) as an example.

The soda lime glass substrate 120 includes sodium oxide (Na ₂ O), calcium oxide (CaO), and silicon dioxide (SiO ₂ ). Therefore, the soda lime glass substrate 120 contains sodium ions (Na +) as alkali ions.

3B illustrates ion exchange of potassium ions (K +) contained in molten salt 900 and sodium ions (Na +) contained in the soda lime glass substrate 120. Here, the temperature of the ion exchange may be about 370 degrees to about 450.

Referring to FIGS. 2 and 3B, sodium ions (Na +) of the soda lime glass substrate 120 are eluted with the molten salt so that the content of sodium ions (Na +) on the upper and lower surfaces of the soda lime glass substrate 120 is increased. The potassium ions (K +) of the molten salt (900) penetrate into the soda lime glass substrate (120) to increase the content of potassium ions (K +) on the upper and lower surfaces of the soda lime glass substrate (120). . By the ion exchange, the ion mixed layers 111 to 511 in which sodium ions (Na +) and potassium ions (K +) are mixed are formed to form the first to fourth base substrates including the ion mixed layers 111 to 511 ( 110 to 510 are formed.

In the ion mixed layers 111 to 511, sodium ions (Na +) contained in the first to fourth base substrates 110 to 510 are ion-exchanged with potassium ions (K +) contained in the molten salt. It is formed by a predetermined depth (D) from the surface of the fourth base substrate (110 to 510).

The depth D is a distance from the surfaces of the first to fourth base substrates 110 to 510 where the sodium ions Na + and the potassium ions K + are mixed. The depth D is a time at which the first to fourth base substrates 110 to 510 are supported on the molten salt 900, the composition of the first to fourth base substrates 110 to 510, or the melting. It may be determined according to the concentration of the salt (900). The depth D may be in the range of about 1 μm to 100 μm. The ratio of the potassium ions (K +) of the molten salt to the sodium ions (Na +) of the first to fourth base substrates 110 to 510 may be about 0.01 to 1.

The potassium ion (K +) or the silver ion (Ag +) is mainly larger in ionic radius than the sodium ion (Na +). The ion mixed layers 111 to 511 have a mixed ion effect in which the mobility of ions is reduced by coexistence of the potassium ions (K +) or the silver ions (Ag +) and the sodium ions (Na +) having different ion radii ( mixed ion effect). Therefore, the time for elution of the sodium ions Na + contained in the first to fourth base substrates 110 to 510 may be delayed by the ion mixing layers 111 to 511.

In addition, the ion mixing layers 111 to 511 formed on the surfaces of the first to fourth base substrates 110 to 510 include the potassium ions (K +) or the silver ions (Ag +) having a large ion radius. Stress is generated. Accordingly, the first to fourth base substrates 110 to 510 may have improved impact resistance by increasing fracture stress due to external impact and deformation.

4A through 4D are cross-sectional views illustrating a method of manufacturing the first display substrate of FIG. 2.

2 and 4A, the first display substrate 100 includes the first base substrate 110 including the ion mixing layer 111. The ion mixed layer 111 is a layer in which sodium ions (Na +) and potassium ions (K +) are mixed. The ion mixed layer 111 is formed at a predetermined depth D from upper and lower surfaces inside the first base substrate 110. The depth D may be in the range of about 1 μm to 100 μm.

A first conductive layer GP is formed on the first base substrate 110 to form a gate pattern including the gate electrode 121 and the gate line GL. A photoresist layer PR is formed on the first base substrate 110 on which the first conductive layer GP is formed, and the photoresist layer is patterned using a mask to form a gate pattern. Remain.

The gate pattern is formed on the first base substrate 110 by patterning the first conductive layer GP using the photoresist pattern PR.

2 and 4B, a gate insulating layer 140 is formed on the first base substrate 110 on which the gate pattern is formed. The semiconductor layer 125 and the ohmic contact layer 126 are formed on the first base substrate 110 on which the gate insulating layer 130 is formed. The semiconductor layer 140 is patterned using the photoresist pattern PR to form the semiconductor layer 125 and the ohmic contact layer 126 on the gate electrode 121.

2 and 4C, the source electrode 124, the drain electrode 123, and the semiconductor substrate 125 and the ohmic contact layer 126 are formed on the first base substrate 110. A second conductive layer DP is formed to form a data pattern including the data line DL. A photoresist layer PR is formed on the second base substrate 110 on which the second conductive layer DP is formed, and the photoresist layer is patterned using a slit mask to form a data pattern. Remain.

The photoresist pattern PR is formed to have a first thickness in a region where the data pattern is formed, and is formed to a second thickness that is thinner than the first thickness in a region corresponding to the channel region of the switching element TR.

The second conductive layer DP is patterned using the photoresist pattern PR to include an electrode pattern of the switching element TR and the data line DL on the first base substrate 110. The data pattern is formed. The photoresist pattern PR is removed by a predetermined thickness to expose the electrode patterns on the channel region C of the switching element TR, and the photoresist pattern PR remains on the data pattern. The electrode patterns on the channel region C are patterned using the remaining photoresist pattern PR to form a source electrode 124 and a drain electrode 123 spaced apart from each other. Thus, the switching element TR is completed.

2 and 4D, the organic insulating layer 150 is formed on the first base substrate 110 on which the switching element TR is formed. The organic insulating layer 150 is etched to form a contact hole 150 exposing the drain electrode 123.

A third conductive layer PP is formed on the first base substrate 110 on which the contact hole 150 is formed. The third conductive layer PP may be made of a transparent conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO), and amorphous indium tin oxide (a-ITO). A photoresist layer is formed on the third conductive layer PP, and the photoresist layer is patterned using a mask to form a photoresist pattern PR. The third conductive layer PP is patterned using the photoresist pattern PR to form a pixel electrode pattern including the pixel electrode 130.

5 is a cross-sectional view for describing a method of manufacturing the second display substrate of FIG. 2.

2 and 5, the second display substrate 200 includes the second base substrate 210 including the ion mixing layer 211. The ion mixed layer 211 is a layer in which sodium ions (Na +) and potassium ions (K +) are mixed. The ion mixed layer 211 is formed at a predetermined depth D from upper and lower surfaces inside the second base substrate 210. The depth D may be in the range of about 1 μm to 100 μm.

The black matrix 220 is formed on the second base substrate 110 by using a photoresist pattern. The color filter pattern is formed on the second base substrate 110 on which the black matrix 220 is formed to form a color filter pattern including the color filter 230.

An overcoat layer 250 is formed on the second base substrate 110 on which the color filter 230 is formed so as to uniformly thickness the black matrix 220 and the color filter 230. The common electrode 240 is formed on the second base substrate 110 on which the overcoat layer 250 is formed.

6 is a table showing the content of sodium ions and potassium ions ion-exchanged in the ion mixed layer with temperature.

Referring to FIGS. 2 and 6, a case in which the soda lime glass substrate is ion exchanged by supporting the molten salt at 410 degrees and 430 degrees will be described as an example.

When ion-exchanged at 410 degrees, the content of sodium ions (Na +) in the first experimental substrate CS_410 is 2.84 atomic percent in the first ion mixed layer ION1 (hereinafter, unit is omitted). And 3.86 in the second ion mixed layer ION2, and 7.05 in the layer BT between the first ion mixed layer ION1 and the second ion mixed layer ION2. Therefore, the content of sodium ions (Na +) in the first ion mixed layer ION1 and the second ion mixed layer ION2 in which ion exchange has occurred is reduced than the content of sodium ions (Na +) in the interlayer BT in which no ion exchange occurs. It can be seen that.

In addition, when ion-exchanged at 410 degree | times, content of the potassium ion (K +) of the 1st experiment board | substrate CS_410 is 4.22 in the 1st ion mixed layer ION1, 5.41 in the 2nd ion mixed layer ION2, and 1st 0.48 between the ion mixing layer ION1 and the second ion mixing layer ION2. Therefore, it can be seen that the content of potassium ions (K +) in the first ion mixed layer ION1 and the second ion mixed layer ION2 in which ion exchange has occurred has increased.

Herein, the content of potassium ions (K +) in the interlayer BT may be 2.0 or less. In addition, the content of potassium ions (K +) of the interlayer BT may be more preferably 1.0 or less. If the content of potassium ions (K +) of the interlayer BT is 2.0 or more, the compressive strength of the surface of the first test substrate may be limited. In this embodiment, since the content of potassium ions (K +) in the interlayer (BT) is 0.48, the ratio of potassium ions (K +) to sodium ions (Na +) is 14.69. That is, since there is no large change in the content of potassium ions K + of the interlayer BT, the first test substrate CS_410 may have a larger volume change, and thus may have a large compressive strength.

When ion-exchanged at 430 degrees, the content of sodium ions (Na +) in the second experimental substrate CS_430 is 3.78 in the first ion mixed layer ION1, 2.07 in the second ion mixed layer ION2, and the first ion mixed layer. 8.05 between the layer ION1 and the second ion mixed layer ION2. Therefore, the content of sodium ions (Na +) in the first ion mixed layer ION1 and the second ion mixed layer ION2 in which ion exchange has occurred is reduced than the content of sodium ions (Na +) in the interlayer BT in which no ion exchange occurs. It can be seen that.

In addition, when ion-exchanged at 430 degree | times, content of the potassium ion (K +) of the 2nd experiment board | substrate CS_430 is 5.82 in the 1st ion mixed layer ION1, 7.64 in the 2nd ion mixed layer ION2, and 1st 0.49 between the ion mixing layer ION1 and the second ion mixing layer ION2. Therefore, it can be seen that the content of potassium ions (K +) in the first ion mixed layer ION1 and the second ion mixed layer ION2 in which ion exchange has occurred has increased.

Herein, the content of potassium ions (K +) in the interlayer BT may be 2.0 or less. In addition, the content of potassium ions (K +) of the interlayer BT may be more preferably 1.0 or less. If the content of potassium ions (K +) of the interlayer BT is 2.0 or more, the compressive strength of the surface of the first test substrate may be limited. In this embodiment, since the content of potassium ions (K +) in the interlayer BT is 0.49, the ratio of potassium ions (K +) to sodium ions (Na +) is 16.43. That is, since there is no large change in the content of potassium ions (K +) of the interlayer BT, the second test substrate CS_430 may have a larger volume change, and thus may have a large compressive strength. have. As the experiment is performed at a higher temperature than that of the first experiment substrate CS_430 in the case of the second experiment substrate CS_430, in the case of the first experiment substrate CS_410 in the case of the second experiment substrate CS_430. More stress relaxation occurred. Therefore, the hardness of the second experimental substrate CS_430 is lower than the hardness of the first experimental substrate CS_410.

7A and 7B are cross-sectional views illustrating a method of manufacturing the touch substrate of FIG. 2.

2 and 7A, the first touch substrate 400 includes the third base substrate 410 including the ion mixing layer 411. The ion mixed layer 411 is a layer in which sodium ions (Na +) and potassium ions (K +) are mixed. The ion mixed layer 411 is formed to a predetermined depth D from upper and lower surfaces inside the third base substrate 410. The depth D may be in the range of about 1 μm to 100 μm.

A touch electrode layer TP is formed on the third base substrate 410 to form a touch electrode pattern including the first touch electrode 420 and the wiring electrode 440. A photoresist layer is formed on the third base substrate 410 on which the touch electrode layer TP is formed, and the photoresist layer PR is patterned using a mask to leave a photoresist pattern PR for forming a gate pattern. .

The touch electrode layer TP is patterned using the photoresist pattern PR to form the touch electrode pattern on the fourth base substrate 410.

2 and 7B, a spacer layer SP is formed on the third base substrate 410 on which the touch electrode 420 is formed. A photoresist layer is formed on the third base substrate 410 on which the spacer layer SP is formed, and the photoresist layer is patterned using a mask to form a spacer pattern. Thus, the first touch substrate 400 is completed.

Since the method of manufacturing the second touch substrate 500 is substantially the same as the method of manufacturing the first touch substrate 400, redundant description will be omitted.

In the display device panel 1000 according to the present exemplary embodiment, an ion mixed layer is formed on the display substrates 100 and 200 and the first to fourth base substrates 110, 210, 410 and 510 constituting the touch substrates 400 and 500. By forming (111, 211, 411, 511), display characteristics can be improved without degrading the characteristics of the switching element. In addition, it is possible to increase the fracture stress against external impact.

According to embodiments of the present invention, by forming an ion mixed layer on a soda lime glass substrate, it is possible to increase the compressive stress against external impact, and to prevent deterioration of the characteristics of the switching element formed on the soda lime glass substrate. Can be.

Although described above with reference to the embodiments, those skilled in the art can be variously modified and changed within the scope of the present invention without departing from the spirit and scope of the invention described in the claims below. I can understand.

1 is a plan view of a panel for a display device according to an exemplary embodiment of the present invention.

FIG. 2 is a cross-sectional view taken along the line II of FIG. 1.

3A and 3B are cross-sectional views illustrating a method of manufacturing the base substrate of FIG. 2.

4A through 4D are cross-sectional views illustrating a method of manufacturing the first display substrate of FIG. 2.

5 is a cross-sectional view for describing a method of manufacturing the second display substrate of FIG. 2.

6 is a table showing the content of sodium ions and potassium ions ion-exchanged in the ion mixed layer with temperature.

7A and 7B are cross-sectional views illustrating a method of manufacturing the touch substrate of FIG. 2.

<Description of the symbols for the main parts of the drawings>

100: first display substrate 110: first base substrate

200: second display substrate 220: second base substrate

300: liquid crystal layer 400: first touch substrate

410: third base substrate 500: second touch substrate

510: fourth base substrate 600: bonding portion

1000: substrate for display device

Claims (14)

A base substrate having an ion mixed layer in which the alkali ions and the metal ions are mixed on the upper and lower surfaces of the soda lime glass substrate having alkali ions; And And an electrode layer to which a voltage formed on the base substrate is applied. The method of claim 1, wherein the soda lime glass substrate has sodium oxide (Na 2 O), calcium oxide (CaO) and silicon dioxide (SiO 2), The content ratio of the sodium oxide (Na 2 O), the calcium oxide (CaO) and the silicon dioxide (SiO 2) is about 13:12:70. The substrate of claim 1, wherein the metal ion comprises one of potassium ions (K +), silver ions (Ag +), and lithium ions (Li +). The method of claim 1, wherein the electrode layer, The gate line disposed on the base substrate; A data line crossing the gate line on the base substrate on which the gate line is disposed; And And a pixel electrode disposed on the base substrate on which the data line is disposed and formed in the pixel region. The method of claim 1, wherein the electrode layer, A color filter disposed on the base substrate; And And a common electrode disposed on the base substrate on which the color filter is disposed. The display device substrate of claim 1, wherein the electrode layer comprises touch electrodes arranged side by side in one direction on the base substrate. The method of claim 1, wherein the base substrate further comprises an interlayer formed between the upper surface and the lower surface of the soda lime glass substrate, The metal ion content of the said interlayer is 1.0 atomic percentage or less, The board | substrate for display apparatuses characterized by the above-mentioned. Supporting a soda lime glass substrate having alkali ions in a molten salt having metal ions; Ion-exchanging alkali ions contained in the soda lime glass substrate and metal ions contained in the molten salt to form a base substrate having an ion mixed layer; And Forming an electrode layer to which a voltage is applied on the base substrate. The method of claim 8, wherein the soda lime glass substrate has sodium oxide (Na 2 O), calcium oxide (CaO) and silicon dioxide (SiO 2), The content ratio of said sodium oxide (Na2O), said calcium oxide (CaO), and said silicon dioxide (SiO2) is about 13:12:70, The manufacturing method of the board | substrate for display devices. The method of claim 8, wherein the molten salt comprises one of potassium ions (K +), silver ions (Ag +), and lithium ions (Li +). The method of claim 8, wherein the ion exchange is performed at about 370 degrees to about 450 degrees. The method of claim 8, wherein the forming of the electrode layer, Patterning a first conductive layer on the base substrate to form the gate line; Patterning a second conductive layer on the base substrate on which the gate line is formed to form a data line crossing the gate line; And And forming a pixel electrode formed in a pixel region by patterning a third conductive layer on the base substrate on which the data line is formed. The method of claim 8, wherein the forming of the electrode layer, Patterning a color filter layer on the base substrate to form a color filter; And And forming a common electrode on the base substrate on which the color filter is formed. The method of claim 8, wherein the forming of the electrode layer, And forming touch electrodes arranged side by side in one direction on the base substrate.

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