KR20110066799A - Light emitting diode package - Google Patents

Light emitting diode package Download PDF

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Publication number
KR20110066799A
KR20110066799A KR1020090123590A KR20090123590A KR20110066799A KR 20110066799 A KR20110066799 A KR 20110066799A KR 1020090123590 A KR1020090123590 A KR 1020090123590A KR 20090123590 A KR20090123590 A KR 20090123590A KR 20110066799 A KR20110066799 A KR 20110066799A
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KR
South Korea
Prior art keywords
light emitting
porous
emitting diode
heat dissipation
lead frame
Prior art date
Application number
KR1020090123590A
Other languages
Korean (ko)
Inventor
조항섭
Original Assignee
엘지디스플레이 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지디스플레이 주식회사 filed Critical 엘지디스플레이 주식회사
Priority to KR1020090123590A priority Critical patent/KR20110066799A/en
Publication of KR20110066799A publication Critical patent/KR20110066799A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

PURPOSE: A light emitting diode package is provided to rapidly radiate heat from a light emitting diode by forming a porous radiation unit under a light emitting chip. CONSTITUTION: In a light emitting diode package, first and second porous lead frames(153a,153b) are arranged in order to respectively protect the both edge of a base substrate(151). A light emitting diode(155) is arranged on the second porous lead frame at the center of the base substrate. The porous radiating unit(157) is arranged in the rear side of the second porous lead frame. The second porous lead frame and porous radiating unit are formed into one body. A transparent molding layer(158) having a protection function is formed on a fluorescent layer(117).

Description

Light Emitting Diode Package {LIGHT EMITTING DIODE PACKAGE}

The present invention relates to a light emitting diode package.

Cathode ray tube (CRT), one of the widely used display devices, is mainly used for monitors such as TV (Television), measuring equipment, information terminal devices, etc., but due to the weight and size of CRT itself, It was not able to actively cope with miniaturization and weight reduction.

Therefore, in the trend of miniaturization and light weight of various electronic products, CRT has a certain limit in weight and size, and is expected to replace the liquid crystal display (LCD) and gas discharge using electro-optic effects. Plasma Display Panels (PDPs) and Electro Luminescence Displays (ELDs) using electroluminescent effects are used. Among them, research on liquid crystal displays is being actively conducted.

BACKGROUND ART Liquid crystal display devices have tended to be gradually widened due to their light weight, thinness, and low power consumption. Accordingly, in order to meet the needs of users, liquid crystal display devices are progressing in the direction of large area, thinning, and low power consumption.

BACKGROUND ART A liquid crystal display device is a display device that displays an image by controlling an amount of light passing through a liquid crystal, and is widely used for advantages such as thinning and low power consumption.

Unlike the CRT, the liquid crystal display is not a display device that emits light by itself, and thus, a back light unit including a separate light source is provided on the rear surface of the liquid crystal display panel to provide light for visually representing an image. .

The backlight unit uses a plasma light source such as a cold cathode fluorescent lamp (CCFL), a hot cathode fluorescent tube (HCFL), an external electrode fluorescent tube (EEFL), and an external & internal electrode fluorescent tube (EIFL). Or white light emitting diodes (LEDs).

Among them, light emitting diodes (LEDs) are widely used for their advantages of long life, low power, small size, and high durability.

1 is a view showing the structure of a light emitting diode package according to the prior art.

Referring to FIG. 1, the LED package 10 includes a base substrate 51, first and second lead frames 53a and 53b surrounding both edges of the base substrate 51, and the second lead frame. A light emitting chip 55 mounted on the 53b, a fluorescent layer 7 containing a fluorescent material on the light emitting chip 55, and a transparent molding layer having a protective function on the fluorescent layer 7 ( 58). 56a and 56b are a first wire and a second wire.

In addition, the LED package 10 has a structure in which a wall 54 surrounds edges of the fluorescent layer 7 and the transparent molding layer 58. The wall 54 has an inclined angle at an inner surface thereof.

In addition, a heat dissipation part 57 is formed under the light emitting chip 55 integrally with the second lead frame 53b. The heat dissipation part 57 is formed of a metallic material like the second lead frame 53b.

However, when the heat dissipation part 57 is simply formed of a metal as described above, the heat generated from the light emitting chip 55 may not be quickly dissipated, thereby increasing the temperature of the light emitting chip 55.

When the temperature of the light emitting chip 55 increases, the lifespan of the light emitting chip 55 may be shortened, the brightness of light may decrease, and color change may occur.

The present invention provides a light emitting diode package capable of quickly dissipating heat generated from a light emitting chip to realize long life, high brightness and vivid color characteristics of the light emitting chip.

The light emitting diode package of the present invention for solving the above problems, the base substrate; First and second porous lead frames disposed to surround respective edges of the base substrate; A light emitting chip disposed on the second porous lead frame in the center of the base substrate; And a porous heat dissipation unit disposed on a rear surface of the second porous lead frame in which the light emitting chip is disposed.

In addition, a light emitting diode package according to another embodiment of the present invention, the base substrate;

First and second lead frames disposed to surround respective edges of the base substrate; A light emitting chip disposed on the second lead frame in the center of the base substrate; And a porous heat dissipation unit disposed on a rear surface of the second lead frame in which the light emitting chip is disposed, and a heat dissipation pattern is formed on a rear surface of the second lead frame in contact with the porous heat dissipation unit.

The light emitting diode package of the present invention has an effect of rapidly dissipating heat generated from the light emitting chip by forming a porous heat dissipating portion under the light emitting chip.

In addition, the LED package according to the present invention has an effect of implementing the LED package with high brightness, vivid color reproduction, and long life by forming a heat dissipation pattern and a porous heat dissipation part on a rear surface of the lead frame corresponding to the LED chip.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The following embodiments are provided by way of example so that those skilled in the art can fully understand the spirit of the present invention. Accordingly, the invention is not limited to the embodiments described below and may be embodied in other forms. In the drawings, the size and thickness of the device may be exaggerated for convenience. Like numbers refer to like elements throughout.

2 is a diagram illustrating a structure of a light emitting diode package according to a first embodiment of the present invention.

2, the light emitting diode package 100 according to the first embodiment of the present invention includes a base substrate 151 and first and second porous lead frames 153a surrounding both edges of the base substrate 151. , 153b, a light emitting chip 155 mounted on the second porous lead frame 153b, a fluorescent layer 117 containing a fluorescent material on the light emitting chip 155, and the fluorescent layer 117 ), A transparent molding layer 158 having a protective function.

In addition, the LED package 100 has a structure in which a wall 154 surrounds edges of the fluorescent layer 117 and the transparent molding layer 158. The wall 154 has an inclined angle at an inner surface thereof.

The light emitting chip 155 is a light source device positioned in the center of the base substrate 151 and is mounted on the upper surface of the second porous lead frame 153b by a wire bonding method.

The light emitting chip 155 generates a small number of carriers (electrons or holes) injected by using a pn junction structure of a semiconductor, and emits light by recombination thereof, and includes first and second metal wires made of a metal material. The first and second porous lead frames 153a and 153b are electrically connected to each other via 156a and 156b.

A porous heat dissipation unit 157 formed integrally with the second porous lead frame 153b is formed under the second porous lead frame 153b on which the light emitting chip 155 is mounted. The first and second porous lead frames 153a and 153b and the porous heat dissipation unit 157 have a structure in which a plurality of holes H are formed in a conductive metal such as copper (Cu), aluminum (Al), and silver (Ag). It is.

Therefore, a plurality of holes H are formed inside the porous heat dissipation unit 157, thereby increasing the area of heat dissipation. The heat generated by the light emitting chip 155 may be quickly discharged by the holes H formed in the porous heat radiating unit 157.

In addition, in the present invention, the first and second porous lead frames 153a and 153b electrically connected to the light emitting chip 155 also have a porous structure in which holes H are formed. In addition, heat dissipation occurs in the first and second porous lead frames 153a and 153b. Therefore, the area where heat generated from the light emitting chip 155 is radiated becomes wider.

As described above, in the present invention, since the heat generated by the light emitting chip 155 can be quickly discharged to the outside, the lifespan of the light emitting chip 155 is long, and the color reproduction characteristics generated by the light emitting chip 155 are improved. In addition, the luminance of light generated by the light emitting chip 155 increases.

In particular, the present invention has an advantage that it can be easily applied to a light emitting chip mounted with a high output light emitting diode because of excellent heat dissipation characteristics.

3 is a view showing the structure of a light emitting diode package according to a second embodiment of the present invention.

Since the same reference numerals as the reference numerals of FIG. 2 refer to the same components, the description will be made with respect to parts that are discriminated.

Referring to FIG. 3, the LED package 200 according to the second embodiment of the present invention includes a base substrate 151, first and second lead frames 253a and 253b, and the second lead frame 253b. ) Includes a light emitting chip 155, a fluorescent layer 157, and a transparent molding layer 158.

The first and second lead frames 253a and 253b are formed of a conductive metal such as copper (Cu), aluminum (Al), and silver (Ag).

In the second embodiment of the present invention, the porous heat dissipation unit 257 is made of carbon or ceramic material and attached to the rear surface of the second lead frame 253b on which the light emitting chip 155 is disposed. The porous heat dissipation unit 257 has a plurality of holes H formed in a carbon or ceramic material. However, unlike the first embodiment, it is formed of a non-conductive material.

As described above, the function of the porous heat dissipation unit 257 formed of carbon or ceramic material is the same as that described in the first embodiment.

4A to 4D are views for explaining the characteristics of the LED package of the present invention.

Referring to FIG. 4A, a large amount of current flows in the high output light emitting diode, and the temperature of the light emitting diode increases due to the flowing current. As the temperature of the light emitting diode increases, as shown in FIGS. 4B to 4D, the color change of the light emitting diode is severe, the life is shortened, and the luminance is decreased.

When comparing a light emitting diode (LED) having a conventional heat dissipation unit and a light emitting diode (LED) having a porous heat dissipation unit as in the present invention, the temperature of the light emitting diode increases linearly when the amount of current flowing through the light emitting diode increases. .

However, in the light emitting diode including the porous heat dissipation unit of the present invention, it can be seen that the temperature of the light emitting diode increases in a substantially parallel direction as the current increases. This means that the heat radiation characteristics of the porous heat radiation portion of the present invention are better than the heat radiation portion of the conventional light emitting diode.

Referring to FIG. 4B, when the temperature of the light emitting diode is low (less than 50 ° C.), there is little difference in color change of red, green, and blue, but as the temperature increases, the color change of red, green, and blue is severe. Can be.

Referring to FIG. 4C, it can be seen that the lifespan of the light emitting diode is extended as the temperature of the light emitting diode is reduced. In addition, in FIG. 4D, the luminance increases as the temperature decreases.

As described above, the porous heat dissipation unit of the present invention can quickly dissipate heat generated from the light emitting diodes, and thus can be used without high temperature rise even in a high output light emitting diode. In addition, the LED package of the present invention can achieve high brightness while extending the life of the LED and improving the color reproducibility.

5 is a view showing the structure of a light emitting diode package according to a third embodiment of the present invention.

Referring to FIG. 5, the LED package 400 according to the third embodiment of the present invention includes a base substrate 151, first and second lead frames 253a and 253b, and the second lead frame 253b. ) Includes a light emitting chip 155, a fluorescent layer 157, and a transparent molding layer 158.

The first and second lead frames 253a and 253b are formed of a conductive metal such as copper (Cu), aluminum (Al), and silver (Ag).

In the third embodiment of the present invention, a heat radiation pattern 300 having a plurality of uneven structures is further formed on the rear surface of the second lead frame 253b on which the light emitting chip 155 is disposed, thereby further increasing the heat radiation area. In addition, the heat dissipation pattern 300 is further improved by attaching a porous heat dissipation unit 257 formed of carbon or a ceramic material.

Effects of the third embodiment are also the same as those of the first embodiment and the second embodiment.

1 is a view showing the structure of a light emitting diode package according to the prior art.

2 is a view showing the structure of a light emitting diode package according to a first embodiment of the present invention.

3 is a view showing the structure of a light emitting diode package according to a second embodiment of the present invention.

4A to 4D are views for explaining the characteristics of the LED package of the present invention.

5 is a view showing the structure of a light emitting diode package according to a third embodiment of the present invention.

Claims (8)

A base substrate; First and second porous lead frames disposed to surround respective edges of the base substrate; A light emitting chip disposed on the second porous lead frame in the center of the base substrate; And And a porous heat dissipation unit disposed on a rear surface of the second porous lead frame in which the light emitting chip is disposed. The light emitting diode package of claim 1, wherein the first and second porous lead frames and the porous heat dissipation part are formed of any one material of copper (Cu), aluminum (Al), or silver (Ag). The light emitting diode package of claim 1, wherein the second porous lead frame and the porous heat dissipation unit are integrally formed. The light emitting diode package of claim 1, wherein the porous heat dissipation part is formed of carbon or a ceramic material. The LED package of claim 1, wherein a plurality of holes are formed in the first and second porous lead frames and the porous heat dissipation part. A base substrate; First and second lead frames disposed to surround respective edges of the base substrate; A light emitting chip disposed on the second lead frame in the center of the base substrate; And A porous heat dissipation unit disposed on a rear surface of the second lead frame in which the light emitting chip is disposed; A light emitting diode package, characterized in that a heat radiation pattern is formed on the rear surface of the second lead frame in contact with the porous heat radiation portion. The light emitting diode package of claim 6, wherein the first and second lead frames are formed of any one material of copper (Cu), aluminum (Al), or silver (Ag). The light emitting diode package of claim 6, wherein the porous heat dissipation part is formed of carbon or a ceramic material.
KR1020090123590A 2009-12-11 2009-12-11 Light emitting diode package KR20110066799A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020090123590A KR20110066799A (en) 2009-12-11 2009-12-11 Light emitting diode package

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Application Number Priority Date Filing Date Title
KR1020090123590A KR20110066799A (en) 2009-12-11 2009-12-11 Light emitting diode package

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KR20110066799A true KR20110066799A (en) 2011-06-17

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104253193A (en) * 2014-08-06 2014-12-31 浙江英特来光电科技有限公司 High-light effect and high-performance LED (light-emitting diode)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104253193A (en) * 2014-08-06 2014-12-31 浙江英特来光电科技有限公司 High-light effect and high-performance LED (light-emitting diode)

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