KR20110056713A - Manufactuing method of organic light emitting diode device - Google Patents

Abstract

PURPOSE: A manufacturing method of an organic light emitting diode device is provided to prevent a compound color by forming a hole transfer layer, a mixed layer, and an organic emitting layer through a transfer process. CONSTITUTION: In a manufacturing method of an organic light emitting diode device, a first electrode(120) is formed on a first substrate(110). A bank layer(125) is formed in order to expose the first electrode. a hole-transport layer(131) is arranged on the surface the first electrode. An organic light-emitting layer(133) is arranged on the surface the hole-transport layer. A second electrode(140) is arranged on the surface the organic light-emitting layer. A mixed layer(132) is interposed between the hole-transport layer and the light-emitting layer.

Description

Manufacturing Method of Organic Light Emitting Diode Device

The present invention relates to a method of manufacturing an organic light emitting display device.

Recently, the importance of flat panel displays (FPDs) has increased with the development of multimedia. In response to this, a variety of liquid crystal displays (LCDs), plasma display panels (PDPs), field emission displays (FEDs), organic light emitting devices (Organic Light Emitting Devices), etc. Flat panel displays have been put into practical use.

In particular, the organic light emitting device has a high response time with a response speed of 1 ms or less, low power consumption, and self-luminous light. In addition, there is no problem in viewing angle, which is advantageous as a moving image display medium regardless of the size of the device. In addition, low-temperature manufacturing is possible, and the manufacturing process is simple based on the existing semiconductor process technology has attracted attention as a next-generation flat panel display device in the future.

The organic light emitting device includes a light emitting layer between the anode and the cathode, and holes supplied from the anode and electrons received from the cathode combine in the light emitting layer to form an exciton, which is a hole-electron pair, and then the excitons return to the ground state. The energy is emitted by the generated energy.

However, the organic light emitting device as described above has a great influence on the life and efficiency of the device depending on the material and the laminated structure used. Therefore, research for developing an organic light emitting display device having a superior lifetime and efficiency is ongoing.

The present invention relates to an organic light emitting display device, and more particularly, to provide an organic light emitting display device having a superior lifetime and efficiency by forming a mixed layer having a concentration gradient between a hole transport material and a light emitting material in a relatively simple process.

In order to achieve the above object, a method of manufacturing an organic light emitting display device according to an embodiment of the present invention comprises the steps of forming a first electrode on a first substrate, heat generation on a second substrate facing the first substrate Forming an element, sequentially forming an organic light emitting material pattern and a hole transport material pattern on a second substrate on which the heating element is formed, aligning and bonding the first substrate and the second substrate, and then Power is applied to the heating element of the second substrate to transfer the hole transport material pattern and the organic light emitting material pattern, thereby simultaneously forming a hole transport layer, a mixed layer having a concentration gradient between the hole transport material and the organic light emitting material, and an organic light emitting layer And forming a second electrode on the first substrate on which the hole transport layer, the mixed layer, and the organic light emitting layer are formed.

The mixed layer may form a gradient in which the concentration of the hole transport material decreases closer to the organic light emitting layer.

The mixed layer may form a gradient in which the concentration of the organic light emitting material increases as the organic layer approaches the organic light emitting layer.

The mixed layer may form a concentration gradient in which the hole transport material and the light emitting material are inversely proportional to each other.

The organic light emitting layer may have a thickness of about 5 nm to about 150 nm.

The thickness of the mixed layer may be 1 to 30% of the thickness of the light emitting layer.

The method may further include forming a hole injection layer on the first electrode before forming the hole transport layer, the mixed layer, and the organic light emitting layer.

After forming the hole transport layer, the mixed layer and the organic light emitting layer, it may further comprise the step of sequentially forming an electron transport layer and the electron injection layer on the organic light emitting layer.

The method may further include forming an insulating layer on the second substrate before forming the hole transport material pattern and the organic light emitting material pattern on the second substrate.

The heating element may include any one or more selected from the group consisting of Ag, Au, Al, Cu, Mo, Pt, Ti, W and Ta.

In the present invention, by forming the hole transport layer, the mixed layer and the organic light emitting layer by using the transfer process, not only the color mixing phenomenon during the manufacturing process can be prevented, but also the position of the material can be precisely controlled.

In addition, since the hole transport layer, the mixed layer and the organic light emitting layer can be simultaneously formed in one step by applying the power, it is possible to save the wasted time by sequentially scanning like the laser thermal transfer method, simplifying the manufacturing process and reducing the processing time. There is an advantage that can be significantly reduced.

Further, by forming a mixed layer having a concentration gradient between the hole transport material and the light emitting material between the hole transport layer and the light emitting layer, there is an advantage that the life of the organic light emitting device can be improved.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a view showing an organic light emitting display device according to a first embodiment of the present invention, Figures 2a to 2f is a view showing a manufacturing method of an organic light emitting display device according to a first embodiment of the present invention by process, 3 is a view showing a concentration gradient of the electron transport material and the light emitting material of the mixed layer of the present invention, Figure 4 is a diagram showing a band diagram of the organic light emitting device according to the first embodiment of the present invention.

Referring to FIG. 1, the organic light emitting display device 100 according to the first embodiment of the present invention may include a first substrate 110, a first electrode 120 positioned on the first substrate 110, and the first substrate 110. The bank layer 125 exposing the first electrode 120 and covering the edges of the first electrode 120, the hole transport layer 131 positioned on the first electrode 120, and the hole transport layer 131. It includes an organic light emitting layer 133 is located and a second electrode 140 located on the organic light emitting layer 133, located between the hole transport layer 131 and the light emitting layer 133, and a hole transport material and light emission The material may include a mixed layer 132 having a concentration gradient.

Referring to the manufacturing method of the organic light emitting device 100 according to the first embodiment of the present invention having the structure as described above is as follows.

Referring to FIG. 2A, a first electrode 220 is formed on the first substrate 210. The first substrate 210 may be made of glass, plastic, or metal, and may further include a thin film transistor including a semiconductor layer, a gate electrode, a source electrode, and a drain electrode.

The first electrode 220 may be an anode electrode, and may be a transparent electrode or a reflective electrode. When the first electrode 220 is a transparent electrode, the first electrode 220 may be formed of any one of indium tin oxide (ITO), indium zinc oxide (IZO), and zinc oxide (ZnO). In addition, when the first electrode 220 is a reflective electrode, the first electrode 220 may further include a reflective layer made of any one of aluminum (Al), silver (Ag), or nickel (Ni) under a layer made of any one of ITO, IZO, or ZnO. In addition, the reflective layer may be included between two layers made of any one of ITO, IZO, and ZnO.

The first electrode 220 may be formed using a sputtering method, an evaporation method, a vapor phase deposition method, or an electron beam deposition method.

A bank layer 225 is formed on the first electrode 220. The bank layer 225 may cover the edge of the first electrode 220 and expose the first electrode 220.

Referring to FIG. 2B, the heating element 235 is formed on the second substrate 230 made of transparent glass or plastic. The size of the second substrate 230 may be the same as or larger than that of the first substrate 210. The heating element 235 may include at least one selected from the group consisting of Ag, Au, Al, Cu, Mo, Pt, Ti, W, and Ta, which may generate heat by applying a voltage. However, the present invention is not limited thereto.

The heat generating element 235 may be formed using any method such as CVD (chemical vapor deposition), sputtering, electron beam (E-Beam), and electrolytic / electroless plating. The heating element 235 is obtained by depositing the entire surface of the metal or alloy, and then patterning the deposited surface of the metal or alloy through a photolithography process, a wet etching process, or a dry etching process. Lose. The heat generating element 235 is formed in accordance with the pixel position of the first substrate 210 to which the organic light emitting material is to be transferred. The width of the heating element 235 formed on the second substrate 230 is smaller than the sum of the widths of the pixel layers of the first substrate 210 and the width of the bank layer 225 partitioning between neighboring pixels. May be the same. The thickness of the heat generating element 235 is preferably within a maximum of 1㎛ in consideration of the resistance component that generates Joule heat.

In order to prevent the heating element 235 that generates Joule heat from being oxidized or diffused into the organic light emitting material (EML), an insulating layer 238 may be further included on the heating element 235. The insulating layer 238 may be selected from a silicon oxide film, a silicon nitride film, and a silicon oxynitride film and may be deposited on the heating element 235 through a CVD process or a sputtering process. In addition, the insulating layer 238 may be selected from a material such as spin-on-glass (SOG), and may be deposited on the heating element 235 through a heat treatment process after spin coating. Hereinafter, the second substrate 230 without the insulating film 238 will be described as an example.

Referring to FIG. 2C, after the organic light emitting material hole transport material and the organic light emitting material are completely deposited on the second substrate 230 on which the heating element 235 is formed, a process such as thermal evaporation is performed. The organic light emitting material pattern 241 and the hole transport material pattern 242 are sequentially formed on the heating element 235 corresponding to the position where the pixel of the first substrate 210 is to be formed to form the second substrate 230. do.

In this case, the hole transport material pattern 242 is NPD (N, N-dinaphthyl-N, N'-diphenyl benzidine), TPD (N, N'-bis- (3-methylphenyl) -N, N'-bis- ( phenyl) -benzidine), s-TAD and MTDATA (4,4 ', 4 "-Tris (N-3-methylphenyl-N-phenyl-amino) -triphenylamine) It is not limited.

The organic light emitting material pattern 241 may be formed of a material emitting red, green, and blue, and may be formed using phosphorescent or fluorescent materials.

When the organic light emitting material pattern 241 is a material emitting red color, the organic light emitting material pattern 241 includes a host material including CBP (carbazole biphenyl) or mCP (1,3-bis (carbazol-9-yl), and PIQIr (acac) ( bis (1-phenylisoquinoline) acetylacetonate iridium), PQIr (acac) (bis (1-phenylquinoline) acetylacetonate iridium), PQIr (tris (1-phenylquinoline) iridium) and PtOEP (octaethylporphyrin platinum) The organic light emitting material pattern 241 may be formed of a phosphor including a dopant, and alternatively, a phosphor including a PBD: Eu (DBM) ₃ (Phen) or a perylene. In the case of a material emitting light, the host material includes CBP or mCP, and may be formed of a phosphor including a dopant material including Ir (ppy) 3 (fac tris (2-phenylpyridine) iridium). Unlike Alq3 (tris (8-hydroxyquinolino) aluminum) In addition, the organic light emitting material pattern 241 may include a host material including CBP or mCP, and includes (4,6-F _2). ppy) may comprise a phosphor comprising a dopant material comprising ₂ Irpic; alternatively, spiro-DPVBi, spiro-6P, ditylbenzene (DSB), distriarylene (DSA), PFO-based polymer and PPV It may be composed of a fluorescent material including any one selected from the group consisting of polymers, but is not limited thereto.

Next, referring to FIG. 2D, the first substrate 210 on which the first electrode 220 is formed, the second substrate 100 on which the organic light emitting material pattern 241 and the hole transport material pattern 242 are formed are aligned with each other. Stick together. This alignment and bonding process is performed under a vacuum or inert gas (Ar, N _2, etc.) atmosphere to protect the material pattern from moisture / oxygen. The coalescence may be made by mechanical pressing.

Subsequently, referring to FIG. 2E, the power V is applied from the outside to the heat generating element 235 of the second substrate 230 where the alignment and bonding process are completed. By applying the power V, the heating element 235 generates Joule heat to sublimate the materials of the organic light emitting material pattern 241 and the hole transport material pattern 242 formed thereon. As a result, the organic light emitting material pattern 241 and the hole transport material pattern 242 on the second substrate 230 are transferred to the pixel region of the first substrate 210 to transfer the hole transport layer 251, the mixed layer 252, and the organic light. The light emitting layer 253 is formed.

In more detail, the hole transport material pattern 242 is sublimed and transferred onto the first substrate 210 in the order in which the second substrate 230 is closer to the first substrate 210. In the region where the organic light emitting material pattern 241 is adjacent to each other, the hole transport material and the organic light emitting material are simultaneously sublimed. At this time, since the hole transport material pattern 242 is closer to the first substrate 210, more hole transport materials are transferred, and the organic light emitting material is gradually transferred. When the hole transport material pattern 242 is mostly transferred, the organic light emitting material pattern 241 is sublimated, thereby increasing the transfer of the organic light emitting material. Therefore, the hole transport layer 251 to which the hole transport material is transferred is finally formed on the first substrate 210, and the mixed layer 252 having the concentration gradient between the hole transport material and the organic light emitting material is formed on the hole transport layer 251. Finally, the organic light emitting layer 253 to which the organic light emitting material is transferred is formed.

At this time, since the first substrate 210 and the second substrate 230 are almost in close contact with the bank layer 225 therebetween, it is possible to prevent the mixed color phenomenon caused by the diverging or spreading of the transfer regions with different pixel areas. In addition, the formation position of the material can be precisely controlled. In addition, since the hole transport layer 251 and the organic light emitting layer 253 can be simultaneously formed in one step by applying power, the manufacturing process is simplified because the time wasted by sequentially scanning like a laser thermal transfer method. This can have the advantage of significantly reducing process time.

Such organic materials are generally denatured or their combined bonds are broken after prolonged exposure at high temperature. Therefore, in order to prevent thermal denaturation of the organic material, it is preferable that the application time of the power source applied to the heat generating element 235 is 0.1 kW to 1 s, and the power density of the power source applied to the heat generating element 235 is 0.1. is referred to as ^{W / ㎝ 2 ~ 10000 W /} ㎝ 2 is preferred. The power applied to the heat generating element 235 may be AC power or DC power, and may be applied several times intermittently.

Next, referring to FIG. 2F, the organic light emitting diode 200 is manufactured by forming the second electrode 260 on the entire surface of the first substrate 210 formed up to the organic light emitting layer 253. The second electrode 260 may be a cathode, and may be made of magnesium (Mg), calcium (Ca), aluminum (Al), silver (Ag), or an alloy thereof having a low work function. Here, the second electrode 260 may be formed to a thickness thin enough to transmit light when the organic light emitting diode is a front or double-side light emitting structure, and when the organic light emitting diode is the bottom light emitting structure, light is emitted. It can be formed thick enough to reflect.

Meanwhile, referring to FIG. 3, the above-described mixed layer 252 may be positioned between the hole transport layer 251 and the organic light emitting layer 252 to facilitate the injection of holes injected from the first electrode 220. have.

In order to interface with the hole transport layer 251, the mixed layer 252 may decrease the concentration of the hole transport material toward the area adjacent to the organic light emitting layer 253 from the area adjacent to the hole transport layer 251. In addition, the concentration of the light emitting material may increase in the mixed layer 252 from the region adjacent to the hole transport layer 251 to the region adjacent to the organic light emitting layer 253 to interface with the organic light emitting layer 253.

In addition, in the mixed layer 252 of the present invention, as the organic light emitting layer 253 is adjacent to the hole transport layer 251, the proportion of the hole transport material is gradually decreased, and inversely, the proportion of the organic light emitting material is gradually increased. Concentration gradients can be achieved.

The organic light emitting layer 253 may be formed to a thickness of 5 to 150nm. In this case, the thickness of the mixed layer 252 may be 1 to 30% of the thickness of the organic light emitting layer 253. Here, if the thickness of the mixed layer 252 is 1% or more of the thickness of the organic light emitting layer 253, the efficiency of the device by lowering the energy barrier between the hole transport layer 251 and the organic light emitting layer 253 to facilitate the injection of holes And lifespan, and when the thickness of the mixed layer 252 is 30% or less than the thickness of the organic light emitting layer 253, the thickness of the mixed layer 252 is too thick to prevent the driving voltage from increasing and the efficiency of the mixture being lowered. There is an advantage to this.

Referring to FIG. 4, a band diagram in which the hole transport layer 251, the mixed layer 252, and the light emitting layer 253 are sequentially stacked is illustrated.

The hole h injected from the first electrode is injected into the mixed layer 132 through the hole transport layer 251, and the hole h injected into the mixed layer 132 is injected into the organic light emitting layer 253. The electron e injected from the second electrode 260 is injected into the organic light emitting layer 253, and holes h and electrons e emit excitons in the organic light emitting layer 253.

Here, the mixed layer 252 formed between the hole transport layer 251 and the organic light emitting layer 253 reduces the energy barrier between the hole injection layer 251 and the organic light emitting layer 253, so that the hole h is the organic light emitting layer 253. ) To facilitate injection into the organic light emitting layer 253, thereby allowing a light emitting region in the organic light emitting layer 253 to be formed at a central portion of the organic light emitting layer 253.

Therefore, since the light emitting region is formed in the center portion of the organic light emitting layer 253, there is an advantage that the efficiency and lifespan of the organic light emitting device can be improved.

5 is a view showing an organic light emitting display device according to a second embodiment of the present invention, Figures 6a to 6c is a view showing a manufacturing method of an organic light emitting display device according to a second embodiment of the present invention by process.

Hereinafter, the manufacturing method of the organic light emitting display device according to the second embodiment of the present invention will be described. Hereinafter, the same process as in the above-described first embodiment will be briefly described.

Referring to FIG. 5, the organic light emitting display device 300 according to the second embodiment of the present invention may include a first substrate 310, a first electrode 320 positioned on the first substrate 310, and the first substrate 310. The bank layer 325 covering the edge of the first electrode 320 and exposing the first electrode 320, the hole injection layer 331 positioned on the first electrode 320, and the hole injection layer 331. On the hole transport layer 332 positioned on the organic light emitting layer 334 and the electron transport layer 335 located on the organic light emitting layer 334 on the hole transport layer 332, on the electron transport layer 335 And a second electrode 340 positioned on the electron injection layer 336 and positioned between the hole transport layer 332 and the light emitting layer 334. And the light emitting material may include a mixed layer 333 having a concentration gradient.

In the organic light emitting device 300 according to the second embodiment of the present invention, a hole injection layer 331 is further provided between the first electrode 320 and the hole transport layer 332, and the organic light emitting layer 334 and the second light emitting device 334 are provided. An electron transport layer 335 and an electron injection layer 336 may be further provided between the electrodes 340.

Referring to the manufacturing method of the organic light emitting device 300 according to the second embodiment of the present invention having the structure as described above is as follows.

Referring to FIG. 6A, a first electrode 420 is formed on the first substrate 410. The first electrode 420 may be an anode electrode. The bank layer 425 is formed on the first electrode 420. The bank layer 425 may cover an edge of the first electrode 420 and may expose the first electrode 420.

Next, a hole injection layer 431 is formed on the first substrate 410 including the first electrode 420. The hole injection layer 431 may play a role of smoothly injecting holes from the first electrode 420 into the organic light emitting layer, and may include CuPc (cupper phthalocyanine), PEDOT (poly (3,4) -ethylenedioxythiophene), and PANI (PANI). polyaniline) and NPD (N, N-dinaphthyl-N, N'-diphenyl benzidine) may be made of any one or more selected from the group consisting of, but is not limited thereto. The hole injection layer 431 may be formed using an evaporation method or a spin coating method, and the thickness of the hole injection layer 431 may be 1 to 150 nm.

Next, referring to FIG. 6B, a hole transport layer 432, a mixed layer 433, and an organic light emitting layer 434 are formed on the first substrate 410. In the second embodiment, a description will be omitted in which the hole transport layer 432, the mixed layer 433, and the organic light emitting layer 434 are formed through the same transfer process as the first embodiment.

6C, the electron transport layer 435 is formed on the first substrate 410 formed up to the organic light emitting layer 434. The electron transport layer 435 serves to facilitate the transport of electrons, and may be made of any one or more selected from the group consisting of Alq3 (tris (8-hydroxyquinolino) aluminum), PBD, TAZ, spiro-PBD, BAlq, and SAlq. However, the present invention is not limited thereto. The electron transport layer 435 may be formed using an evaporation method or a spin coating method, and the thickness of the electron transport layer 435 may be 1 to 50 nm.

In addition, the electron transport layer 435 may also prevent the holes injected from the anode from passing through the light emitting layer to the cathode. In other words, it serves as a hole blocking layer to effectively bond holes and electrons in the light emitting layer.

Next, an electron injection layer 436 is formed on the first substrate 410 including the electron transport layer 435. The electron injection layer 436 serves to facilitate the injection of electrons, and may be Alq3 (tris (8-hydroxyquinolino) aluminum), PBD, TAZ, spiro-PBD, BAlq or SAlq, but is not limited thereto. The electron injection layer 436 may further include an inorganic material, and the inorganic material may further include a metal compound. The metal compound may include an alkali metal or an alkaline earth metal. Metal compound containing the alkali metal or alkaline earth metal is LiQ, LiF, NaF, KF, RbF, CsF, FrF, BeF 2, MgF 2, CaF 2, SrF 2, BaF any one selected from ₂ the group consisting of RaF ₂ It may be more than but not limited to. The electron injection layer 436 may be formed using an evaporation method or a spin coating method, and the thickness of the electron injection layer 436 may be 1 to 50 nm.

As described above, the organic light emitting display device according to the first and second embodiments of the present invention may form a hole transport layer, a mixed layer, and an organic light emitting layer by using a transfer process, thereby preventing mixed color phenomenon during the manufacturing process, It is possible to precisely control the formation position of the.

In addition, since the hole transport layer, the mixed layer and the organic light emitting layer can be simultaneously formed in one step by applying the power, it is possible to save the wasted time by sequentially scanning like the laser thermal transfer method, simplifying the manufacturing process and reducing the processing time. There is an advantage that can be significantly reduced.

In addition, by forming a mixed layer having a concentration gradient between the hole transport material and the light emitting material between the hole transport layer and the light emitting layer, there is an advantage that the life of the organic light emitting device can be improved.

Hereinafter, an organic light emitting display device including the mixed layer of the present invention will be described in detail in the following examples. However, the following examples are merely to illustrate the present invention is not limited to the following examples.

Example

The light emitting area was patterned to a size of 3 mm x 3 mm on the glass substrate and then washed. ITO, which is an anode, was formed on the substrate at a thickness of 500 kPa, and CuPc, which was a hole injection layer, was formed at a thickness of 1000 kPa. The donor substrate was formed with a host CBP of green light emitting material and Ir (PPY) ₃ of dopant having a thickness of 300 GPa, and a hole transporting material NPD was formed with a thickness of 1000 GPa, and then the glass substrate and the donor substrate were bonded and transferred. The process was performed to form a hole transport layer, a mixed layer having a thickness of 50 kV and an organic light emitting layer. Next, spiro-PBD, which is an electron transport layer, was formed to a thickness of 200 mW, LiF, which was an electron injection layer, was formed to a thickness of 10 mW, and Al, a cathode, was formed to a thickness of 1000 mW, thereby manufacturing an organic light emitting display device.

Comparative example

The hole transport layer and the organic light emitting layer were deposited by evaporation, respectively, and no mixed layer was formed. An organic light emitting diode was manufactured under the same process conditions as in the above-described embodiment.

The driving voltage, the luminous efficiency, the power efficiency, the quantum efficiency, and the brightness of the organic light emitting diodes manufactured according to the above Examples and Comparative Examples were measured and shown in Table 1 below, and the graphs of the measured lifetimes are shown in FIG. 7.

Driving voltage (V) Luminous Efficiency (Cd / A) Power efficiency (lm / W) Quantum Efficiency (%) Luminance (Cd / ㎡) Comparative example 3.25 26.56 25.67 8.32 2656 Example 3.27 25.99 24.95 8.16 2598

Referring to Table 1, it can be seen that the organic light emitting diode manufactured according to the embodiment of the present invention exhibits the same driving voltage and efficiency as compared with the comparative example.

On the other hand, referring to Figure 7, it can be seen that the organic light emitting display device according to the embodiment is very excellent in life characteristics compared to the comparative example.

As described above, the organic light emitting display device according to the embodiments of the present invention includes a mixed layer having a concentration gradient between the electron transport material and the light emitting material between the electron transport layer and the light emitting layer, thereby lowering the energy barrier between the electron transport layer and the light emitting layer. The life of the electroluminescent device can be improved.

Therefore, there is an advantage in that the lifespan of the organic light emitting display device can be improved and accordingly, an organic light emitting display device having excellent reliability can be provided.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood that the invention may be practiced. Therefore, the embodiments described above are to be understood as illustrative and not restrictive in all aspects. In addition, the scope of the present invention is shown by the claims below, rather than the above detailed description. Also, it is to be construed that all changes or modifications derived from the meaning and scope of the claims and their equivalent concepts are included in the scope of the present invention.

1 is a view showing an organic light emitting display device according to a first embodiment of the present invention.

2A to 2F are diagrams illustrating processes for manufacturing an organic light emitting display device according to a first embodiment of the present invention.

3 is a view showing the concentration gradient of the electron transport material and the light emitting material of the mixed layer of the present invention.

4 is a band diagram of an organic light emitting display device according to a first exemplary embodiment of the present invention.

5 is a view showing an organic light emitting display device according to a second embodiment of the present invention.

6a to 6c are views illustrating a method of manufacturing an organic light emitting display device according to a second embodiment of the present invention for each step.

7 is a graph showing the lifetime of the organic light emitting display device manufactured according to Examples and Comparative Examples.

Claims (10)

Forming a first electrode on the first substrate; Forming a heating element on a second substrate facing the first substrate; Sequentially forming an organic light emitting material pattern and a hole transport material pattern on a second substrate on which the heat generating element is formed; After aligning and bonding the first substrate and the second substrate, power is applied to the heating element of the second substrate to transfer the hole transport material pattern and the organic light emitting material pattern, thereby transferring the hole transport layer and the hole transport. Simultaneously forming a mixed layer and an organic light emitting layer having a concentration gradient between the material and the organic light emitting material; And Forming a second electrode on the first substrate on which the hole transport layer, the mixed layer, and the organic light emitting layer are formed. The method of claim 1, And the mixed layer forms a gradient in which the concentration of the hole transport material decreases closer to the organic light emitting layer. 3. The method of claim 2, And the mixed layer forms a gradient in which the concentration of the organic light emitting material increases as the organic layer approaches the organic light emitting layer. The method of claim 1, The mixed layer is a method of manufacturing an organic light emitting device to form a concentration gradient in which the hole transport material and the light emitting material in inverse proportion to each other. The method of claim 1, The organic light emitting layer has a thickness of 5 to 150nm manufacturing method of the organic light emitting device. The method of claim 5, The thickness of the mixed layer is a method of manufacturing an organic light emitting device is 1 to 30% of the thickness of the light emitting layer. The method of claim 1, Before forming the hole transport layer, the mixed layer and the organic light emitting layer, A method of manufacturing an organic light emitting display device, the method comprising: forming a hole injection layer on the first electrode. The method of claim 7, wherein After forming the hole transport layer, the mixed layer and the organic light emitting layer, Method for manufacturing an organic light emitting device further comprising the step of sequentially forming an electron transport layer and an electron injection layer on the organic light emitting layer. The method of claim 1, Before forming the hole transport material pattern and the organic light emitting material pattern on the second substrate, The method of manufacturing an organic light emitting display device further comprising the step of forming an insulating film on the second substrate. The method of claim 1, The heating device is a method of manufacturing an organic light emitting device comprising any one or more selected from the group consisting of Ag, Au, Al, Cu, Mo, Pt, Ti, W and Ta.

Images