KR20110024639A - Dopant diffusion solution, and use thereof - Google Patents
Dopant diffusion solution, and use thereof Download PDFInfo
- Publication number
- KR20110024639A KR20110024639A KR1020090082712A KR20090082712A KR20110024639A KR 20110024639 A KR20110024639 A KR 20110024639A KR 1020090082712 A KR1020090082712 A KR 1020090082712A KR 20090082712 A KR20090082712 A KR 20090082712A KR 20110024639 A KR20110024639 A KR 20110024639A
- Authority
- KR
- South Korea
- Prior art keywords
- dopant
- diffusion solution
- solution
- diffusion
- dopant diffusion
- Prior art date
Links
- 238000009792 diffusion process Methods 0.000 title claims abstract description 71
- 239000002019 doping agent Substances 0.000 title claims abstract description 43
- 239000003960 organic solvent Substances 0.000 claims abstract description 13
- 150000001875 compounds Chemical class 0.000 claims abstract description 12
- 239000002904 solvent Substances 0.000 claims abstract description 8
- 239000000654 additive Substances 0.000 claims abstract description 6
- 230000000996 additive effect Effects 0.000 claims abstract description 6
- 229910021478 group 5 element Inorganic materials 0.000 claims abstract description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052796 boron Inorganic materials 0.000 claims abstract description 4
- 239000000203 mixture Substances 0.000 claims description 28
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 229910052698 phosphorus Inorganic materials 0.000 claims description 8
- 239000011574 phosphorus Substances 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 238000009835 boiling Methods 0.000 claims description 4
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 abstract 1
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 12
- 238000000034 method Methods 0.000 description 10
- 239000007787 solid Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- 239000007789 gas Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000012528 membrane Substances 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 2
- QGLWBTPVKHMVHM-KTKRTIGZSA-N (z)-octadec-9-en-1-amine Chemical compound CCCCCCCC\C=C/CCCCCCCCN QGLWBTPVKHMVHM-KTKRTIGZSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- GHXRKGHKMRZBJH-UHFFFAOYSA-N boric acid Chemical compound OB(O)O.OB(O)O GHXRKGHKMRZBJH-UHFFFAOYSA-N 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- YWEUIGNSBFLMFL-UHFFFAOYSA-N diphosphonate Chemical compound O=P(=O)OP(=O)=O YWEUIGNSBFLMFL-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- XTAZYLNFDRKIHJ-UHFFFAOYSA-N n,n-dioctyloctan-1-amine Chemical compound CCCCCCCCN(CCCCCCCC)CCCCCCCC XTAZYLNFDRKIHJ-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- DLYUQMMRRRQYAE-UHFFFAOYSA-N phosphorus pentoxide Inorganic materials O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 1
- FAIAAWCVCHQXDN-UHFFFAOYSA-N phosphorus trichloride Chemical compound ClP(Cl)Cl FAIAAWCVCHQXDN-UHFFFAOYSA-N 0.000 description 1
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 229960004418 trolamine Drugs 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
- H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
본 발명은 반도체 기재 상에 도펀트를 확산시킬 수 있는 도펀트 확산용액, 및 이의 활용 용도에 관한 것이다.The present invention relates to a dopant diffusion solution capable of diffusing a dopant on a semiconductor substrate, and use thereof.
태양전지 산업 생산량의 80% 이상을 차지하고 있는 결정질 실리콘 태양전지의 대체적인 제조과정은, ① 웨이퍼 장착/웨이퍼 세정,② 표면조직화, ③ POCl3 확산(n-형), ⑤ 산화막 PSG 제거, ⑥ 반사방지막 PECVD SiNx 형성, ⑦ 전면전극형성, ⑧ 후면전극형성의 단계를 포함한다.Alternative manufacturing processes for crystalline silicon solar cells, which account for more than 80% of the solar cell industry's production, include: ① wafer mounting / wafer cleaning, ② surface organization, ③ POCl 3 diffusion (n-type), ⑤ oxide film PSG removal, ⑥ reflection Protective film PECVD SiN x formation, ⑦ front electrode formation, ⑧ back electrode formation.
이 중, ③ POCl3 확산단계는, 통상적으로, 확산로 내에 실리콘 웨이퍼를 안치시킨 후, 오산화인, 또는 염화산화인의 확산가스를 주입함과 동시에, 850 ~ 950℃로 열처리하는 방법을 사용한다. Among these, ③ POCl 3 diffusion step, after placing the silicon wafer in the diffusion furnace, injecting a diffusion gas of phosphorus pentoxide or phosphorus chloride oxide, and at the same time, a method of heat treatment at 850 ~ 950 ℃ .
이와 같은 방법은, 에미터층 형성방법에 있어서 매우 통상적인 것으로, 이에 대한 선행기술의 예시로 한국 특허 공개 10-2007-0071060을 들 수 있다. 상기 한국 특허 공개 10-2007-0071060는 반도체 기판의 제 1 면에 에미터층을 형성하는 단계; 상기 에미터층 위에 절연막을 형성하는 단계; 상기 절연막 위에 상기 에미터층과 동일한 전도형의 도펀트를 함유하는 화합물을 임의의 패턴으로 형성하는 단계; 상기 화합물이 형성된 부분의 절연막을 제거하면서 상기 도펀트를 확산시키는 고농도 에미터부를 형성하는 단계; 상기 화합물을 제거하는 단계; 및 상기 고농도 에미터부에 전기적으로 연결되도록 제 1 전극을 형성하는 단계를 포함하는 태양 전지의 제조 방법에 관한 것을 개시하고 있다.Such a method is very common in the method of forming an emitter layer, and Korean Patent Laid-Open Publication No. 10-2007-0071060 can be cited as an example of the prior art. Korean Patent Publication 10-2007-0071060 discloses forming an emitter layer on a first surface of a semiconductor substrate; Forming an insulating film on the emitter layer; Forming a compound containing a dopant of the same conductivity type as the emitter layer in an arbitrary pattern on the insulating film; Forming a high concentration emitter portion for diffusing the dopant while removing the insulating film on the portion where the compound is formed; Removing the compound; And forming a first electrode to be electrically connected to the high concentration emitter unit.
그런데, 상기한 종래 방법의 문제점은, 확산로 내에 확산가스의 농도가 일정하지 않다는 것이다. 즉, 확산로 내의 중앙부와 외곽부 사이에는 농도 구배가 발생하고, 중앙부에 위치한 웨이퍼와 외곽부에 위치한 웨이퍼가 균일하게 에미터층을 형성하지 못하는 것이다. However, a problem with the above-described conventional method is that the concentration of the diffusion gas in the diffusion furnace is not constant. That is, a concentration gradient occurs between the center portion and the outer portion in the diffusion path, and the wafer positioned at the center portion and the wafer positioned at the outer portion do not form an emitter layer uniformly.
이러한 종래 방법의 문제점을 해결하기 위해서, 더미 웨이퍼(dummy wafer)를 외곽부에 투입하기도 하나, 이렇게 되면 더미 웨이퍼가 차지하는 만큼 생산성이 저하되는 문제점이 있다. 또한, 염화산화인 등의 유독한 확산가스로 인해 작업자가 인에 중독될 수 있는 문제점도 있다.In order to solve the problem of the conventional method, a dummy wafer may be put in the outer portion, but this causes a problem that productivity decreases as much as the dummy wafer occupies. In addition, there is a problem that the worker can be addicted to phosphorus due to toxic diffusion gas such as phosphorus chloride.
이와 같은 확산가스를 사용한 에미터층 형성의 문제점을 해결하기 위해 확산용액을 사용하는 방법이 개발되었다. In order to solve the problem of the emitter layer formation using the diffusion gas, a method using a diffusion solution has been developed.
이에 대한 선행기술의 예시로 한국 특허 공개 10-2007-0099840 을 들 수 있다. 상기 특허 공개 문헌은 반도체 기판의 일면에 다공성막을 형성하는 단계; 상기 다공성막에 도펀트를 함유하는 화합물을 분사하는 단계; 및 상기 도펀트를 확산시켜 상기 반도체 기판의 일면에 에미터층을 형성하는 단계를 포함하는 태양 전지의 제조 방법에 관한 것을 개시하고 있다.An example of this prior art is Korean Patent Publication No. 10-2007-0099840. The patent publication includes forming a porous film on one surface of a semiconductor substrate; Spraying a compound containing a dopant on the porous membrane; And diffusing the dopant to form an emitter layer on one surface of the semiconductor substrate.
인 함유 화합물은 친수성으로서 소수성인 반도체 기판 위에 도펀트 함유 화합물이 잘 도포되기 어렵다. 따라서, 다공성막을 먼저 형성하고 이것에 스프레이법으로 인함유 화합물을 도포하여 인이 실리콘 기판에 잘 확산되도록 하는 것이다.The phosphorus-containing compound is hydrophilic and difficult to apply the dopant-containing compound well onto a hydrophobic semiconductor substrate. Therefore, a porous film is first formed and a phosphorus-containing compound is applied to the phosphor so that phosphorus diffuses well on the silicon substrate.
그런데, 이와 같은 한국 특허 공개 10-2007-0099840 의 방법도 문제점이 없는 것은 아니다.However, the method of Korean Patent Publication No. 10-2007-0099840 is not without problems.
우선, 다공성막 형성을 위한 추가적인 공정이 발생하고, 다공성 막으로 인해 태양전지의 경도가 저하될 수 있는 바, 인쇄 및 소성공정에서 파손율이 증가하게 된다. 또한, 다공성 막 형성시 기공이 규칙적이지 않고, 랜덤하게 발생하여 에미터 저항의 균일성 관리에 어려움이 생기는 문제점도 있다.First, an additional process for forming a porous membrane occurs, and the hardness of the solar cell may be reduced due to the porous membrane, thereby increasing the breakage rate in the printing and firing process. In addition, when the porous membrane is formed, the pores are not regular, and randomly occur, which causes difficulty in managing uniformity of emitter resistance.
이에, 본 발명은, 상기한 종래기술들의 문제점을 해결하기 위해, 도펀트를 포함하는 화합물을 유기용매에 녹인 도펀트 확산용액을 제공하고자 한다.Accordingly, the present invention is to provide a dopant diffusion solution in which a compound containing a dopant is dissolved in an organic solvent in order to solve the problems of the prior art.
본 발명은 상기한 종래기술의 문제점을 해결하기 위해 안출된 것으로서,The present invention has been made to solve the above problems of the prior art,
도펀트를 포함하는 화합물, 및 유기용매를 포함하는 도펀트 확산용액에 있어서, 상기 도펀트는 인(P)을 포함하는 제 5 족 원소에서 선택되어지는 하나 이상의 것, 또는 붕소(B)를 포함하는 제 3 족 원소에서 선택되어지는 하나 이상의 것임을 특징으로 하는 도펀트 확산용액을 제공한다.A compound containing a dopant, and a dopant diffusion solution containing an organic solvent, wherein the dopant is at least one selected from a Group 5 element containing phosphorus (P), or a third containing boron (B) It provides a dopant diffusion solution, characterized in that at least one selected from the group elements.
또한, 본 발명에 있어서, 상기 유기용매는 저비점 휘발성 용매인 것임을 특징으로 하는 도펀트 확산용액을 제공한다.In addition, the present invention provides a dopant diffusion solution, characterized in that the organic solvent is a low boiling point volatile solvent.
또한, 본 발명에 있어서, 상기 도펀트 확산용액의 용도는, 태양전지 전극 제조에 사용되는 페이스트 조성물의 첨가제로서 사용되는 것임을 특징으로 하는 도펀트 확산용액을 제공한다.In addition, the present invention provides a dopant diffusion solution, wherein the dopant diffusion solution is used as an additive of a paste composition used for manufacturing a solar cell electrode.
또한, 본 발명에 있어서, 상기 확산용액은 상기 페이스트 조성물 대비 2 ~ 12 중량% 포함되어 사용되는 것임을 특징으로 하는 도펀트 확산용액을 제공한다.In addition, in the present invention, the diffusion solution provides a dopant diffusion solution, characterized in that used to contain 2 to 12% by weight relative to the paste composition.
또한, 본 발명에 있어서, 상기 확산용액은 페이스트 조성물 대비 4 ~ 6 중량% 포함되어 사용되는 것임을 특징으로 하는 도펀트 확산용액을 제공한다.In addition, in the present invention, the diffusion solution provides a dopant diffusion solution, characterized in that used to contain 4 to 6% by weight relative to the paste composition.
또한, 본 발명에 있어서, 상기 도펀트 확산용액의 용도는, 태양전지 제조공 정 중 에미터 형성공정의 도핑용액으로서 사용되는 것임을 특징으로 하는 도펀트 확산용액을 제공한다.In addition, in the present invention, the use of the dopant diffusion solution provides a dopant diffusion solution, characterized in that it is used as the doping solution of the emitter forming process in the solar cell manufacturing process.
본 발명의 도펀트 확산용액은, 에미터층 확산 공정에 사용되는 경우, 확산가스를 사용하는 경우에 비해 확산 균일도 및 생산성 향상을 기할 수 있고, 전극 형성 페이스트에 첨가제로서 사용되는 경우, N++층 또는 P+층 향상으로 인해 광효율을 향상시키는 효과가 있다.When the dopant diffusion solution of the present invention is used in the emitter layer diffusion process, the diffusion uniformity and productivity can be improved as compared with the case of using the diffusion gas, and when used as an additive in the electrode forming paste, the N ++ layer or the P + layer. The improvement has an effect of improving the light efficiency.
이하, 본 발명에 대하여 상세히 설명한다.EMBODIMENT OF THE INVENTION Hereinafter, this invention is demonstrated in detail.
본 발명은, 도펀트를 포함하는 화합물, 및 유기용매를 포함하는 도펀트 확산용액에 관한 것이다.The present invention relates to a compound containing a dopant, and a dopant diffusion solution containing an organic solvent.
상기 도펀트 확산용액은 N형 확산용액과, P형 확산용액을 포함하는 것이다. 상기 N형 확산용액은 인(P)을 포함하는 제 5 족 원소에서 선택되어지는 하나 이상의 것을 유기용매에 포함한다. 즉, 상기 N형 확산용액은, Phosphorus, Nitrogen, Arsenic, Antimony,Bismuth 등의 제 5 족 원소의 하나 또는 이들의 2 이상의 조합을 알코올, 아세톤 등의 유기용매에 용해시켜 제조될 수 있다. 특히, N형 확산용액의 경우 상기 용매로 Oleyl amine, triethanol amine, trioctyl amine 등의 아민계 용매를 예로 들 수 있다.The dopant diffusion solution includes an N-type diffusion solution and a P-type diffusion solution. The N-type diffusion solution contains at least one selected from the group 5 element containing phosphorus (P) in the organic solvent. That is, the N-type diffusion solution may be prepared by dissolving one or two or more combinations of Group 5 elements such as Phosphorus, Nitrogen, Arsenic, Antimony, and Bismuth in an organic solvent such as alcohol and acetone. In particular, in the case of the N-type diffusion solution, an amine solvent such as Oleyl amine, triethanol amine, trioctyl amine may be mentioned as the solvent.
또한, P형 확산용액은 붕소(B)를 포함하는 제 3 족 원소에서 선택되어지는 하나 이상의 것을 유기용매에 포함한다. 즉, P형 확산용액은, Aluminum, Gallium, Indium, Thallium 등의 제 3 족 원소의 하나 또는 이들의 2 이상의 조합을 알코올, 아세톤 등의 유기용매에 용해시켜 제조될 수 있다.In addition, the P-type diffusion solution contains at least one selected from the group 3 element containing boron (B) in the organic solvent. That is, the P-type diffusion solution may be prepared by dissolving one or two or more combinations of Group 3 elements such as Aluminum, Gallium, Indium, and Thallium in an organic solvent such as alcohol and acetone.
상기 유기용매는 저비점 휘발성 용매인 것임이 바람직하다. 용매는 추후 공정에서 휘발되어 도펀트만을 대상물에 균일하게 잔류시켜야 하는 것이어야 하기 때문이다. 이러한 저비점 용매의 예로, 알코올, 아세톤 등을 예로 들 수 있다.It is preferable that the organic solvent is a low boiling point volatile solvent. This is because the solvent must be volatilized in a later process so that only the dopant remains uniformly in the object. As an example of such a low boiling point solvent, alcohol, acetone, etc. are mentioned.
본 발명에 있어서, 상기 도펀트 확산용액의 용도는, 태양전지 전극 제조에 사용되는 페이스트 조성물의 첨가제로서 사용되는 것; 또는 태양전지 제조공정 중 에미터 형성공정의 도핑용액으로서 사용되는 것일 수 있다.In the present invention, the use of the dopant diffusion solution is used as an additive of the paste composition used in the production of solar cell electrodes; Or it may be used as a doping solution of the emitter forming process of the solar cell manufacturing process.
특히, 상기 도펀트 확산용액의 용도가 태양전지 전극 제조에 사용되는 페이스트 조성물의 첨가제로서 사용되는 것일 경우에는, 상기 확산용액은 상기 페이스트 조성물 대비 2 ~ 12 중량% 포함되어 사용되는 것이 바람직하고, 4 ~ 6 중량% 포함되어 사용되는 것이 더 바람직하다(이에 대해서는 실시예를 참조).In particular, when the use of the dopant diffusion solution is used as an additive of the paste composition used to manufacture the solar cell electrode, the diffusion solution is preferably used containing 2 to 12% by weight relative to the paste composition, 4 ~ It is more preferable to include 6% by weight (see Examples).
이하, 본 발명에 대하여 실시예를 들어 더 상세히 설명한다. 본 명세서상에 기재된 실시예는 발명의 상세한 설명을 위한 것일뿐 권리범위를 제한하기 위한 것이 아님을 분명히 한다.Hereinafter, an Example is given and this invention is demonstrated in detail. It is apparent that the embodiments described herein are only for the detailed description of the invention and are not intended to limit the scope of the rights.
실시예 1Example 1
고형분 함량 73 wt%의 페이스트 조성물(알루미늄 파우더 70wt%, 글라스 프릿(glass frit) 3wt%, 유기비히클 27wt%) 에 P형 확산용액을 페이스트 조성물 전체 대비 2 중량% 첨가하였다. 상기 P형 확산용액은 붕산(boric acid)를 아세톤(acetone)에 녹 인 것으로서, 붕산 30 wt%와 아세톤 70 wt% 포함한 것이다.To the paste composition having a solid content of 73 wt% (70 wt% of aluminum powder, 3 wt% of glass frit, and 27 wt% of organic vehicle), a 2 wt% P-type diffusion solution was added to the paste composition. The P-type diffusion solution is a solution of boric acid (boric acid) dissolved in acetone (acetone), containing 30 wt% of boric acid and 70 wt% of acetone.
실시예 2Example 2
고형분 함량 73%의 페이스트 조성물에 P형 확산용액을 페이스트 조성물 전체 대비 4 중량% 첨가하였다. 상기 P형 확산용액은 상기 실시예 1과 조성이 같은 것이다.4% by weight of the P-type diffusion solution was added to the paste composition having a solid content of 73%. The P-type diffusion solution is the same composition as in Example 1.
실시예 3Example 3
고형분 함량 73%의 페이스트 조성물에 P형 확산용액을 페이스트 조성물 전체 대비 6 중량% 첨가하였다. 상기 P형 확산용액은 상기 실시예 1과 조성이 같은 것이다.The P-type diffusion solution was added to the paste composition having a solid content of 73% by weight of 6% by weight relative to the whole paste composition. The P-type diffusion solution is the same composition as in Example 1.
실시예 4Example 4
고형분 함량 73%의 페이스트 조성물에 P형 확산용액을 페이스트 조성물 전체 대비 8 중량% 첨가하였다. 상기 P형 확산용액은 상기 실시예 1과 조성이 같은 것이다.The P-type diffusion solution was added to the paste composition having a solid content of 73% by weight of 8% by weight relative to the whole paste composition. The P-type diffusion solution is the same composition as in Example 1.
실시예 5Example 5
고형분 함량 73%의 페이스트 조성물에 P형 확산용액을 페이스트 조성물 전체 대비 10 중량% 첨가하였다. 상기 P형 확산용액은 상기 실시예 1과 조성이 같은 것이다.The P-type diffusion solution was added to the paste composition having a solid content of 73% by 10% by weight relative to the whole paste composition. The P-type diffusion solution is the same composition as in Example 1.
실시예 6Example 6
고형분 함량 73%의 페이스트 조성물에 P형 확산용액을 페이스트 조성물 전체 대비 12 중량% 첨가하였다. 상기 P형 확산용액은 상기 실시예 1과 조성이 같은 것이다.The P-type diffusion solution was added to the paste composition having a solid content of 73% by weight of 12% by weight relative to the whole paste composition. The P-type diffusion solution is the same composition as in Example 1.
비교예Comparative example
고형분 함량 73%의 페이스트 조성물에 고체 형태의 B2O3를 첨가하였다. P형 확산용액은 첨가하지 아니하였다.B 2 O 3 in solid form was added to a paste composition of 73% solids. No P-type diffusion solution was added.
[ 전극 형성 및 전극 특성 테스트 ][Electrode Formation and Electrode Property Test]
상기 실시예 1 내지 실시예 6, 및 비교예의 페이스트 조성물을 실리콘 기판상에 도포·건조하여 전극을 형성하였다. 형성된 전극의 물성을 측정하였고, 결과는 하기 표 1과 같았다. 실험의 정밀도를 위해, 동일한 페이스트 조성물에 대해 전극 형성을 총 3회 실시하였다.The paste compositions of Examples 1 to 6 and Comparative Examples were applied and dried on a silicon substrate to form electrodes. The physical properties of the formed electrode were measured, and the results are shown in Table 1 below. For the precision of the experiment, electrode formation was carried out a total of three times for the same paste composition.
상기 표 1에 나타난 바와 같이, 확산용액의 함량은 4 ~ 6 중량%에서 최적을 보인다. 특히, 도 1에 나타나듯이, 6 중량% 이상에서는 특성이 수렴하는 형상을 보인다.As shown in Table 1, the content of the diffusion solution is optimal at 4 ~ 6% by weight. In particular, as shown in Fig. 1, at 6 wt% or more, the characteristics converge.
도 1은 실시예 1 내지 실시예 6, 및 비교예의 확산용액 함량별 BSF 두께, 및 BSF Ratio 를 나타낸 그래프.1 is a graph showing the BSF thickness, and BSF Ratio for each diffusion solution content of Examples 1 to 6, and Comparative Example.
Claims (6)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020090082712A KR20110024639A (en) | 2009-09-02 | 2009-09-02 | Dopant diffusion solution, and use thereof |
| TW099129389A TWI525162B (en) | 2009-09-02 | 2010-09-01 | Dopant diffusion solution, paste composition for electrode of solar cell using the same and method of forming doping area of solar cell |
| PCT/KR2010/005957 WO2011028034A2 (en) | 2009-09-02 | 2010-09-02 | Dopant diffusion solution, paste composition for electrode, and method of forming doping area |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020090082712A KR20110024639A (en) | 2009-09-02 | 2009-09-02 | Dopant diffusion solution, and use thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20110024639A true KR20110024639A (en) | 2011-03-09 |
Family
ID=43649788
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020090082712A KR20110024639A (en) | 2009-09-02 | 2009-09-02 | Dopant diffusion solution, and use thereof |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR20110024639A (en) |
| TW (1) | TWI525162B (en) |
| WO (1) | WO2011028034A2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2819149A4 (en) * | 2012-02-23 | 2015-11-25 | Hitachi Chemical Co Ltd | Composition for forming n-type diffusion layer, method for producing semiconductor substrate having n-type diffusion layer, and method for producing solar cell element |
| US8853438B2 (en) * | 2012-11-05 | 2014-10-07 | Dynaloy, Llc | Formulations of solutions and processes for forming a substrate including an arsenic dopant |
| MY179365A (en) * | 2015-02-25 | 2020-11-05 | Toray Industries | P-type impurity-diffusing composition, method for manufacturing semiconductor device using said composition, solar cell, and method for manufacturing said solar cell |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5270248A (en) * | 1992-08-07 | 1993-12-14 | Mobil Solar Energy Corporation | Method for forming diffusion junctions in solar cell substrates |
| US6632730B1 (en) * | 1999-11-23 | 2003-10-14 | Ebara Solar, Inc. | Method for self-doping contacts to a semiconductor |
| WO2008151094A1 (en) * | 2007-05-30 | 2008-12-11 | Kovio, Inc. | Metal inks, methods of making the same, and methods for printing and/or forming metal films |
-
2009
- 2009-09-02 KR KR1020090082712A patent/KR20110024639A/en not_active Application Discontinuation
-
2010
- 2010-09-01 TW TW099129389A patent/TWI525162B/en not_active IP Right Cessation
- 2010-09-02 WO PCT/KR2010/005957 patent/WO2011028034A2/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| WO2011028034A3 (en) | 2011-06-30 |
| TWI525162B (en) | 2016-03-11 |
| TW201116600A (en) | 2011-05-16 |
| WO2011028034A2 (en) | 2011-03-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9181615B2 (en) | Coating fluid for boron diffusion | |
| US20140065764A1 (en) | Method for manufacturing a photovoltaic cell with a locally diffused rear side | |
| US9048374B1 (en) | Method for manufacturing an interdigitated back contact solar cell | |
| JP2012532474A (en) | Using silicon nanoparticle fluids to control a series of dopant diffusion profiles in situ | |
| WO2012151422A1 (en) | Ceramic boron-containing doping paste and methods therefor | |
| KR20130051422A (en) | Thick film conductive composition and use thereof | |
| KR101484833B1 (en) | n-TYPE DIFFUSION LAYER-FORMING COMPOSITION, n-TYPE DIFFUSION LAYER PRODUCTION METHOD AND SOLAR CELL COMPONENT PRODUCTION METHOD | |
| KR20110024639A (en) | Dopant diffusion solution, and use thereof | |
| JP5830143B1 (en) | Method for manufacturing solar battery cell | |
| KR101541660B1 (en) | Composition that forms n-type diffusion layer, n-type diffusion layer manufacturing method and solar cell element manufacturing method | |
| US9196486B2 (en) | Inorganic phosphate containing doping compositions | |
| KR20190049685A (en) | Polysiloxanes, materials for semiconductors, semiconductors and solar cell manufacturing methods | |
| KR101194064B1 (en) | Paste composition for etching and doping | |
| KR20110024638A (en) | Paste composition for manufacturing solar-cell electrode comprising phosphoric dispersant | |
| US20150083209A1 (en) | Coatable diffusing agent composition, method for producing coatable diffusing agent composition, solar cell, and method for manufacturing solar cell | |
| KR20130066613A (en) | N-type diffusion layer forming composition, method of producing n-type diffusion layer, and method of producing solar cell element | |
| JP2017069316A (en) | Paste composition | |
| TWI681566B (en) | Solar cell and its manufacturing method | |
| US9306088B1 (en) | Method for manufacturing back contact solar cells | |
| JP6114170B2 (en) | Manufacturing method of solar cell | |
| WO2023190084A1 (en) | Conductive aluminum paste composition for topcon-type solar cell electrode and topcon-type solar cell layered with reverse surface electrode being fired body of composition | |
| US20200185552A1 (en) | Solar cell and solar cell module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E601 | Decision to refuse application |