KR20110016511A - Lighting emitting diode package and manufacturing method thereof - Google Patents

Abstract

An embodiment of the present invention relates to a light emitting diode package and a method of manufacturing the same. According to an embodiment of the present invention, a light emitting diode package includes: a package body having a curved type cavity formed thereon; A plurality of light emitting diodes including a first light emitting diode and at least one second light emitting diode in the cavity, and a first cavity and at least one second for mounting a first light emitting diode and at least one second light emitting diode, respectively. And a package structure having a plurality of cavities including cavities.

Description

 Light emitting diode package and manufacturing method

The present invention relates to a light emitting diode package and a method of manufacturing the same.

A light emitting diode (LED) may form a light emitting source using compound semiconductor materials such as GaAs series, AlGaAs series, GaN series, InGaN series, and InGaAlP series. Such a light emitting diode chip is mounted in one independent package, or bonded to a submount of a SIOB (Silicon Optical Bench) structure to be manufactured and used as a light emitting diode package.

According to the conventional method of manufacturing a light emitting diode package, there are problems such as time, cost consumption, and thermal reliability due to an inefficient process. Recently, research on a wafer level package (WLP) has been actively conducted. Wafer-level package is a package in which a light emitting diode chip is directly mounted on a wafer. It is easy to mass-produce, ultra-thin and compact, and has excellent heat dissipation, so it is suitable for high power light emitting diode package. It is attracting attention as a technique that can be applied.

A wafer level package is a light emitting diode wafer level package that can be mounted with a single light emitting diode chip, which is expensive and inefficient for diodes emitting multiple lights.

Accordingly, an object of the present invention is to form a curved type cavity to increase the light efficiency by improving the directivity angle and to emit a plurality of types of light by mounting a plurality of light emitting diode chips in one package It is to provide a package and a method of manufacturing the same.

According to an embodiment of the present invention, a light emitting diode package includes: a package body having a curved type cavity formed thereon; A plurality of light emitting diodes including a first light emitting diode and at least one second light emitting diode are formed by forming an open area of a curved type using a mask pattern on the package body, and the first light emitting diode and the at least one And a package structure including a plurality of cavities including a first cavity and at least one second cavity for mounting the second light emitting diode, respectively.

According to the LED package and the manufacturing method thereof according to an embodiment of the present invention, by forming a curved type cavity, it is possible to improve the directivity angle and light efficiency and to mount a plurality of LED chips in one package.

In addition, the LED chips of various colors can be mounted in one package, and each chip mounted can be individually driven to emit light of various colors in one package.

Hereinafter, a detailed description of preferred embodiments of the present invention will be described with reference to the accompanying drawings. It should be noted that the same components in the figures represent the same numerals wherever possible. Specific details are set forth in the following description, which is provided to help a more general understanding of the present invention. And in describing the present invention, if it is determined that the detailed description of the related known function or configuration may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted.

1 is a cross-sectional view illustrating a light emitting diode package according to another embodiment of the present invention.

The package 100 includes a package body 110 having at least one cavity 120 formed thereon for mounting and electrically connecting a plurality of light emitting diode chips 101 and a curved type 120 such as a circular or elliptical shape. It includes.

The package body 110 is a silicon-based wafer level package (WLP), and is made of a polyhedral (eg, rectangular parallelepiped) shaped frame.

The cavity 120 is formed on an upper portion of the package body 110. The cavity 120 may be formed in a curved container shape on a silicon wafer.

The curved structure of the cavity 120 may use any one of oval, circular, non-elliptical, and non-circular types.

The inner surface 112 of the cavity 120 of the package body 110 may be formed in a round shape having a predetermined curvature compared to the cavity bottom surface 111. At this time, the inner surface 112 of the cavity 120 is formed to be bent at a predetermined curvature within an angle of more than 0 ° ~ less than 90 ° with respect to the cavity bottom surface 111.

The depth of the cavity 120 is about 0.4 ~ 1mm, the diameter of the cavity 120 may be formed of 4 ~ 10mm. Here, the cavity diameter may be changed according to the number of light emitting diode chips 101 mounted in the cavity 120.

The upper surface 117 of the package body 110 is formed around the central cavity, the body side 118 may be bent to be inclined toward the upper and lower sides.

Here, at least one side 118 of the package body 110 may be bent to be inclined toward the upper and lower sides, and the other side of the package body 110 may be formed in a vertical shape.

The electrode terminals 114 and 116 of the package body 110 are disposed at both sides by the open regions 131 and 132. Here, the electrode terminals 114 and 116 are formed on the surface except for the open areas 131 and 132 formed inside and outside the cavity 120.

The electrode terminals 114 and 118 may include at least one metal layer among titanium, nickel, copper, gold, aluminum, and silver. Such a metal layer may be formed using an electron beam deposition method, a sputtering method, or a plating method selectively, and improve the amount of reflected light of the light, and improve the soldering of the surface mount technology (SMT) for the package.

At least one light emitting diode chip 101 is mounted on the cavity 120 of the package body 110, and the light emitting diode chip 101 has an electrode terminal disposed on the bottom surface 111 of the cavity 120. 114 and 116, the electrical wires of the electrode terminals 114 and 116 extend to a part of the rear surface 119 along the side surface 118 of the package body 110.

The LED chip 101 may be connected to each terminal by a wire or flip chip method. The arrangement of the electrode terminals may be variously changed according to the number of chips of the diode and the design method, but is not limited thereto.

A mold member (not shown) made of a transparent resin is molded in the cavity 120 to protect the light emitting diode chip 101. This mold member is made of transparent epoxy or silicone material. In addition, at least one kind of phosphors among red, green, and blue phosphors may be added to the mold member, but is not limited thereto. In addition, a convex lens may be attached to the mold member.

2 to 5 are views illustrating a manufacturing process of a light emitting diode package according to an exemplary embodiment of the present invention.

Referring to FIG. 2, a mask pattern 151 is formed on an entire surface of the package body 110 except for an open area of an upper curved type. Here, the mask pattern 151 may make a pattern having a desired shape by using exposure, development, and etching processes of photo-lithography. Here, the present invention is not limited to the photolithography method using a photoresist (PR) solution.

In addition, the mask pattern 151 may be used to make not only an open area of a curved type but also an open area of a circle shape, an ellipse shape, a non-circle shape, and a non-ellipse shape.

In addition, dry etching is performed on the open area of the curved type in which the mask pattern 151 is not formed. The dry etching method may be performed by reactive ion etching (RIE) using plasma, and may selectively use plasma, magnetically enhanced reactive ion etching (MERIE), inductively coupled plasma (ICP), and the like as well as RIE.

Through such a dry etching method to form the cavity (120A, 120B) of a predetermined depth (for example 0.4 ~ 1mm). At this time, the shape of the cavity (120A, 120B) is formed in the shape of a circle column due to the open area of the curved type.

Here, it may be formed in the shape of an ellipse pillar using an ellipse form. Alternatively, the cavity 120 may be formed, for example, in a non-circular type in which at least one side and at least one corner portion are formed in a curved shape in a rectangular structure.

The cavity inner side 112 at this time is formed perpendicular to the bottom surface 111. In addition, the upper inner region of the mask pattern 151, that is, the region of the mask pattern in contact with the cavities 120A and 120B is partially etched. This is a process for securing the inner surfaces of the cavities 1120A and 120B to the wet etching region.

A wet etching process is performed on the cavities 120A and 120B. In this case, in the wet etching process, the isotropic etching is performed using the wet etching solution with respect to the inner surfaces 112 of the cavities 120A and 120B, and as shown in FIG. 4, the inner surfaces 112 of the cavities 120. ) Is formed into a curved surface.

Here, the inner surface 112 of the cavity 120 is rounded stepwise at an angle greater than 0 ° to less than 90 ° with respect to the cavity bottom surface. The wet etching method is an isotropic etching solution HNA (HF + HNO 3 + Acetic Acid), and a mixture of acetic acid, hydrofluoric acid, and silver nitrate is used. The mixture of acetic acid: hydrofluoric acid: nitric acid may be, for example, 30:20:40, the fluctuation range of each acid is about 20%, acetic acid is 24 to 36 ratio, hydrofluoric acid is 16 to 24 ratio, nitric acid is 32 It can be mixed at a ratio of ˜48.

Diameters of the cavities (120A, 120B) may be formed of 4 ~ 10mm. Here, the cavity diameter may be changed according to the number of light emitting diode chips 101 mounted in the cavity 120. The bottom surface 111 and the inner surface 113 of the cavity 120 are formed to have no roughness due to the wet etching process, so that the light efficiency may be improved than the surface of the dry etching.

Then, the mask pattern 151 formed on the outer periphery of the package is removed. Referring to FIG. 4, when the curved cavity 120 is formed on the package body 110, metal layers for the electrode terminals 114 and 116 are formed on the entire surface of the cavity body 110.

The metal layer may be formed by selectively using at least one metal material among titanium, nickel, copper, gold, aluminum, and silver by an electron beam deposition method, a sputtering method, or a plating method. The metal layer of the package body 110 improves the amount of reflected light and improves soldering of the surface mount technology (SMT) to the package.

When the metal layer is formed on the package body 110, open regions 131 and 132 which divide the metal layer into the positive electrode terminals 114 and 116 are formed. The open regions 131 and 132 are formed from the inner circumference of the cavity to the rear surface of the package body 110 and are formed of at least two regions.

Referring to FIG. 5, the cavity 120 of the package body 110 includes, for example, red, green, or blue as the first light emitting diode 101A or the second light emitting diode 101B. ), One or more light emitting diodes emitting various kinds of light such as UV light may be used.

In addition, by applying a phosphor on the outside of the first light emitting diode or the second light emitting diode (2) to convert the wavelength of the light emitted from the first light emitting diode (101A) or the second light emitting diode (101B) to implement the light of a desired color. Can be.

In addition, the first light emitting diode 101A or the second light emitting diode 101B emits light of three or more different colors including, for example, red, green, and blue light. It may be implemented with a plurality of light emitting diodes.

At least one light emitting diode chip 101 may be disposed and is connected to each electrode terminal 114 and 116 by a wire 121. The light emitting diode chip 120 may be connected to a flip method or a wire method. A mold member (not shown) of a translucent material is molded in the curved type cavity 120.

The mold member may be used as a transparent silicone or epoxy material, and at least one phosphor may be added as necessary. In addition, the surface of the mold member may be formed in a flat, concave or convex shape, and may further attach a lens to the surface of the mold member.

Although the present invention has been described above with reference to the embodiments, these are only examples and are not intended to limit the present invention, and those skilled in the art to which the present invention pertains may have an abnormality within the scope not departing from the essential characteristics of the present invention. It will be appreciated that various modifications and applications are not illustrated.

For example, each component specifically shown in the embodiments of the present invention can be modified and implemented. And differences relating to such modifications and applications should be construed as being included in the scope of the invention defined in the appended claims.

1 is a cross-sectional view showing a light emitting diode package according to an embodiment of the present invention;

2 to 5 are views showing a light emitting diode package manufacturing process according to an embodiment of the present invention.

Claims (17)

A package body of a silicon wafer having a curved type cavity formed thereon; A plurality of light emitting diodes including a first light emitting diode and at least one second light emitting diode; And And a package structure including a plurality of cavities including a first cavity and at least one second cavity for mounting the first light emitting diode and the at least one second light emitting diode, respectively. The method of claim 1, wherein the cavity, A light emitting diode package formed by etching the package body of the silicon wafer. The method of claim 1, wherein the inner surface of the cavity, And processing the curved surface by etching and separately forming the first cavity and the second cavity in separate areas of one surface of the package structure. The method of claim 2 or 3, wherein the first cavity and the second cavity, And a metal wire for electrically connecting the first light emitting diode and the second light emitting diode, respectively. Forming a curved open area on the package body of the silicon wafer by using a mask pattern; Dry etching the curved type open area of the package body to form a curved cavity; Wet etching the cavity to process the inner surface of the cavity into a curved shape; And Removing the mask pattern; and a method of manufacturing a light emitting diode package. The method of claim 5, The cavity depth is 0.4 ~ 1mm and the cavity diameter is 4 ~ 10mm LED manufacturing method of the package is formed. The method of claim 5, And partially etching the mask pattern around the open area of the curved type to the wet etching area before the wet etching. The method of claim 5, The wet etching method of manufacturing a light emitting diode package is etched using a mixed material of acetic acid, hydrofluoric acid, nitric acid. The method of claim 5 or 8, The wet etching is a ratio of acetic acid: hydrofluoric acid: nitric acid is 30: 20: 40, the ratio of each acid is changed to the range of ± 20%. The method of claim 5 or 8, The entire circumference of the cavity is processed into a curved surface by the wet etching process, the light emitting diode package manufacturing method of forming a cavity. The method of claim 5 or 8, Manufacture of a light emitting diode package comprising a package structure having a plurality of light emitting diodes and a cavity for mounting the plurality of light emitting diodes, wherein a phosphor is coated on the outside of at least one of the plurality of light emitting diodes. Way. The method of claim 11, wherein the cavity, And a metal wiring electrically separated from each other and separately wired to drive the plurality of light emitting diodes independently. The method of claim 5, Forming an etch mask in which a region of one side of a wafer is partially exposed and etching to form a first cavity on an upper surface of the wafer; And And forming at least one second cavity on the wafer by performing etching after forming a second etching mask that is at least partially exposed on a surface of the wafer on which the first cavity is formed. Method for manufacturing a light emitting diode package. The method of claim 13, wherein the first cavity and the second cavity, The LED package manufacturing method, characterized in that formed separately in the areas separated from each other on one surface of the wafer. 15. The method of claim 14, Forming a metal wiring in the first cavity and the at least one second cavity and mounting the first light emitting diode and at least one second light emitting diode, respectively; further comprising a light emitting diode package manufacturing method. The method of claim 12, wherein the first light emitting diode or the second light emitting diode, A light emitting diode package manufacturing method comprising one or more light emitting diodes emitting different kinds of light. The method of claim 13, And removing the etch mask of one or more regions of the wafer surface, and doping the P or N-type semiconductor impurity to form a zener diode.

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