KR20110014808A - Organic electro-luminescent device and method for fabricating the same - Google Patents

Abstract

PURPOSE: An organic electro luminescence device and a manufacturing method thereof are provided to prevent a contact defect when a first substrate and a second substrate are electrically disconnected by forming a dummy spacer on the first substrate. CONSTITUTION: A driving thin film transistor(DTr) is formed on a first substrate(101). A connection electrode(117) is formed in order to cover a dummy spacer(200) formed in the upper part a protective layer(115). An organic electroluminescent diode is formed on a second substrate(102). The organic electroluminescent diode includes a first electrode(123), a second electrode(127), and an organic light emitting layer(125). A contact spacer(133) interlinks the connection electrode and the second electrode.

Description

Organic electroluminescent device and method of manufacturing the same {Organic electro-luminescent device and method for fabricating the same}

The present invention relates to an organic light emitting display device, and more particularly, to a dual panel type organic light emitting display device.

Until recently, cathode ray tubes (CRT) have been mainly used as display devices. However, in recent years, flat panel such as plasma display panel (PDP), liquid crystal display device (LCD), organic electro-luminescent device (OLED), which can replace CRT, Display devices are widely researched and used.

Among the flat panel display devices as described above, the organic light emitting display device (hereinafter referred to as OLED) is a self-light emitting device, and since the backlight used in the liquid crystal display device which is a non-light emitting device is not necessary, a light weight can be achieved.

In addition, it has better viewing angle and contrast ratio than liquid crystal display, and is advantageous in terms of power consumption. It is also possible to drive DC low voltage, has fast response speed, and is strong against external shock because its internal components are solid. It has advantages

In particular, since the manufacturing process is simple, there is an advantage that can reduce the production cost more than the conventional liquid crystal display device.

OLEDs having these characteristics are largely divided into a passive matrix type and an active matrix type. The passive matrix type constitutes a device in a matrix form while crossing a signal line, whereas an active matrix type is a pixel. A thin film transistor, which is a switching element that turns on / off, is positioned for each pixel.

In recent years, the passive matrix type has many limited elements such as resolution, power consumption, and lifespan. Accordingly, active matrix type OLEDs capable of realizing high resolution and large screens have been actively studied.

1 is a view schematically showing a cross section of a general active matrix OLED.

As shown, the OLED 10 is composed of a first substrate 1 and a second substrate 2 facing the first substrate 1, and the first and second substrates 1, 2 are connected to each other. It is spaced apart and the edge thereof is encapsulated and sealed through a failure pattern (seal pattern 60).

In detail, the driving thin film transistor DTr is formed in each pixel area on the first substrate 1, and the first electrode 3 and the first electrode 3 connected to each driving thin film transistor DTr are formed. The organic light emitting layer 5 which emits light of a specific color on the electrode 3 and the second electrode 7 are formed on the organic light emitting layer 5.

The organic light emitting layer 5 expresses colors of red, green, and blue. In general, separate organic materials 5a, 5b, and 5c emitting red, green, and blue colors are used for each pixel.

The first and second electrodes 3 and 7 and the organic light emitting layer 5 formed therebetween form an organic light emitting diode. In this case, the OLED 10 having such a structure configures the first electrode 3 as an anode and the second electrode 7 as a cathode.

Inside the OLED 10, a moisture absorbent (not shown) is formed to block external moisture.

On the other hand, the OLED 10 is an organic light emitting diode composed of the first electrode 3, the organic light emitting layer 5 and the second electrode 7 on the substrate 1, the driving thin film transistor (DTr) and the like is formed. As the simultaneous formation of a defect occurs in either of the array element or the organic light emitting diode, the final finished OLED 10 has a problem in that the production yield is lowered.

Although not shown in the drawings, recently, an array element is formed on a first substrate, and an organic light emitting diode is formed on the second substrate, the organic light emitting diode comprising a first electrode, an organic light emitting layer, and a second electrode. Subsequently, dual panel-type OLEDs have been introduced, in which substrates are bonded to each other through a contact spacer to be electrically connected to each other, thereby independently managing defects occurring in manufacturing each substrate.

In particular, recently, a full-color dual panel type OLED has attracted attention, and a full color implementation has a structure in which the organic light emitting layer is composed of a monochromatic light emitting layer and a separate full color implementation device is provided.

Here, the separate full color implementation element may be a color filter layer of red, green, and blue, and a white emission layer may be selected as the monochrome emission layer. In this case, a white color filter layer is further included in order to achieve a white balance of appropriateness.

This color filter layer is formed on the second substrate on which the organic light emitting diode is formed.

However, the dual panel type OLED including the color filter layer has a thickness difference according to the wavelength of each color filter layer, thereby causing a step of each color filter layer.

2 is a graph showing an appropriate thickness of each color filter layer.

As can be seen from the graph, it can be seen that the red color filter layer and the white color filter layer have a thickness difference of at least 0.5 μm.

Such a step between the color filter layers causes a difference in cell gap between the first substrate on which the array element is formed and the second substrate on which the organic light emitting diode is formed.

That is, the cell gap between the first substrate and the second substrate is different for each region where the color filter layers are formed. This may cause a poor contact of the contact spacers formed to have a uniform height to electrically connect the first and second substrates to each other.

Here, contact failure means that the first substrate and the second substrate are disconnected without being electrically connected to each other.

Although the overcoat layer is provided to remove the step of the color filter layer, the step of the overcoat layer also occurs due to the step between the color filters, which is difficult to solve the above problems.

The present invention has been made to solve the above problems, and an object thereof is to prevent contact failure of a dual panel OLED.

In order to achieve the object as described above, the present invention includes a first substrate formed with a driving thin film transistor; A connection electrode formed on the first substrate and connected to the driving thin film transistor; A second substrate positioned at a predetermined distance from the first substrate, and having an organic light emitting diode formed of a color filter layer, first and second electrodes, and an organic light emitting layer; The present invention provides a dual panel type organic light emitting display device formed on the second substrate and positioned between the respective color filter layers and including a contact spacer connecting the connection electrode and the second electrode.

In this case, a dummy spacer is formed on the first substrate and is formed to cover the connection electrode to an upper portion corresponding to the position where the contact spacer is formed, and one surface of the dummy spacer facing the contact spacer is the dummy spacer. It is larger than the width of one surface of the contact spacer.

In addition, the height of the dummy spacer corresponds to the height of each color filter layer, and is formed on the first electrode, and includes a buffer layer formed between each color filter layer.

And a partition wall formed at a predetermined thickness on one side of the buffer layer, wherein the driving thin film transistor includes a semiconductor layer, a gate electrode, a source, and a drain electrode, and the connection electrode contacts the drain electrode. do.

In this case, each of the color filter layers includes red, green, blue, and white, and an overcoat layer is formed on each of the color filter layers.

In addition, the present invention comprises the steps of forming a driving thin film transistor on one surface of the first substrate; Forming a protective layer on the driving thin film transistor; Forming a dummy spacer on the protective layer; Forming a contact hole in the passivation layer to expose the driving thin film transistor; Forming a connection electrode contacting the driving thin film transistor through the contact hole and covering the dummy spacer; Forming each color filter layer spaced at a predetermined interval on one surface of the second substrate; Forming a first electrode on each of the color filter layers; Forming a contact spacer in an area between the respective color filter layers on the first electrode; Forming an organic light emitting layer and a second electrode on an entire surface of the second substrate including the contact spacer; And bonding the first and second substrates to contact the connection electrode and the second electrode through the contact spacer.

In this case, a buffer layer is formed on the first electrode and is formed between the respective color filter layers, and the contact spacer is formed on the buffer layer and includes a partition wall formed at a predetermined thickness on one side of the buffer layer. do.

The driving thin film transistor may include a semiconductor layer, a gate electrode, a source and a drain electrode, and the second electrode may be in contact with the drain electrode. Green, blue, and white.

In addition, an overcoat layer is formed on each of the color filter layers.

As described above, according to the present invention, each color is formed by forming a contact spacer on the second substrate in a non-pixel region where each color filter layer is not formed, and further forming a dummy spacer on the first substrate corresponding to the contact spacer. Even if the filter layer is formed to have a different thickness according to the wavelength for each color, there is an effect that it is possible to prevent the contact failure in which the first substrate and the second substrate are electrically disconnected from each other.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

3 is a cross-sectional view showing a portion of a dual panel type OLED according to an embodiment of the present invention, and FIG. 4 is an enlarged cross-sectional view of a portion of FIG. 3.

Meanwhile, the OLED 100 is divided into a top emission type and a bottom emission type according to the transmission direction of emitted light. Hereinafter, the top emission method will be described as an example.

In this case, for convenience of description, the region where the driving thin film transistor DTr is formed is referred to as the driving region DA and the region where the buffer layer 129 is formed as the non-pixel region NA and the color filter layers 135a, 135b, 135c, and 135d. This formed area is defined as a light emitting area PA.

As illustrated, the OLED 100 faces the first substrate 101 on which the driving thin film transistor DTr is formed and the second substrate 102 on which the organic light emitting diode E is formed to face each other. The second substrates 101 and 102 are spaced apart from each other, and the edge portions thereof are encapsulated and sealed through a failure pattern 160.

Here, the driving thin film transistor DTr having the gate electrode 103, the gate insulating film 105, the semiconductor layer 107, and the source and drain electrodes 109 and 111 is formed on the first substrate 101.

In this case, the semiconductor layer 107 is composed of an active layer 107a of pure amorphous silicon and an ohmic contact layer 107b of amorphous silicon including impurities, wherein a switching and driving thin film transistor (DTr) is shown in the drawing. Shows an example of a bottom gate type consisting of pure silicon and impurities amorphous silicon 107a and 107b, and as a modified example thereof, may be formed as a top gate type including a polysilicon semiconductor layer. have.

A protective layer 115 having a drain contact hole 115a exposing the drain electrode 111 of the driving thin film transistor DTr is formed on the driving thin film transistor DTr.

Next, a connection electrode 117 contacting the drain electrode 111 through the drain contact hole 115a is formed in each pixel area P on the passivation layer 115.

At this time, the dummy spacer 200 is further configured on the first substrate 101 between the protective layer 115 and the connection electrode 117 formed on the protective layer 115.

That is, the connection electrode 117 is formed to cover the dummy spacer 200 formed on the protective layer 115.

The dummy spacer 200 is formed to correspond to the position where the contact spacer 133 of the second substrate 102 described later is formed, and thus the driving thin film transistor DTr and the second substrate 102 of the first substrate 101 are formed. The organic light emitting diode E of () is in electrical contact with each other through the contact spacer 133 and the dummy spacer 200. We will discuss this in more detail later.

On the other hand, red, green, blue, and white color filter layers 135a, 135b, 135c, and 135d are formed in each emission area PA on the second substrate 102 facing and facing the first substrate 101. The overcoat layer 137 is formed on the red, green, blue, and white color filter layers 135a, 135b, 135c, and 135d to reduce the step difference of each color filter layer 135a, 135b, 135c, and 135d. .

In addition, an anode as one component constituting the organic light emitting diode E on the entire surface of the second substrate 102 including the red, green, blue, and white color filter layers 135a, 135b, 135c, and 135d. The first electrode 123 forming () is formed.

Here, the first electrode 123 may be made of indium tin oxide (ITO), which is a material having a relatively high work function value.

The non-pixel area NA on the first electrode 123 where the red, green, blue, and white color filter layers 135a, 135b, 135c, and 135d are not formed, that is, each of the color filter layers 135a, 135b, and 135c. , A barrier rib 131 having a predetermined thickness is formed at a position between the buffer layer 129 and the buffer layer 129 at the boundary between the pixel regions P.

The partition wall 131 has a structure in which the cross-sectional area of the side closer to the first electrode 123 is smaller and further away, that is, the cross-section is inversed with respect to the inner surface of the second substrate 102. ) Is made of a structure.

In addition, a driving thin film transistor DTr formed on the first substrate 101 for each pixel region P is provided at one side of the buffer layer 129 having the partition 131 formed thereon to supply current to the organic light emitting diode E. An electrically connected columnar contact spacer 133 is formed.

The contact spacer 133 has a tapered structure in which the end area decreases as the cross-sectional area closer to the first electrode 123 becomes larger and further away.

In addition, the organic light emitting layer 125 and the second electrode 127 are sequentially formed on the entire surface of the substrate 102 including the partition 131 and the contact spacer 133.

In this case, the organic light emitting layer 125 and the second electrode 127 are formed in a structure that is automatically separated for each pixel region P by the partition wall 131 without a separate mask process. The material layer 125a and the second electrode material layer 127a may be left in order.

The first and second electrodes 123 and 127 and the organic light emitting layer 125 formed therebetween form an organic light emitting diode (E).

At this time, the organic light emitting layer 125 is made of a material that emits a single color, it is preferable to emit light of white.

Here, the organic light emitting layer 125 may be composed of a single layer made of a light emitting material, and in order to increase the light emitting efficiency, a hole injection layer, a hole transporting layer, a light emitting layer, an electron transporting layer It may be composed of multiple layers of an electron transporting layer and an electron injection layer.

In addition, the second electrode 127 is made of aluminum (Al) or aluminum alloy (AlNd), which is a metal material having a relatively low work function in order to serve as a cathode.

Accordingly, the second electrode 127 of the organic light emitting diode E is in electrical contact with the connection electrode 117 formed on the first substrate 101 by the contact spacer 133.

The contact spacer 133 of the present invention is intended to electrically connect the two substrates 101 and 102 rather than the cell gap maintaining function, and has a predetermined height in a columnar shape in a section between the two substrates 101 and 102.

Here, the connection portion between the contact spacer 133 and the driving thin film transistor DTr will be described in more detail. The connection electrode 117 connected to the drain electrode 111 of the driving thin film transistor DTr on the first substrate 101 will be described. ) Is formed to cover the dummy spacer 200 formed on the protective layer 115 to have a predetermined height, and the second electrode 127 is formed to cover the contact spacer 133 having a predetermined height.

Therefore, the connecting electrode 117 and the second electrode 127 are electrically contacted with each other by the dummy spacer 200 and the contact spacer 133.

As a result, the organic light emitting diode E formed on the second substrate 102 and the driving thin film transistor DTr formed on the first substrate 101 are electrically connected.

When a predetermined voltage is applied to the first electrode 123 and the second electrode 127 according to the selected color signal, the OLED 100 may be formed from holes and second electrodes 127 injected from the first electrode 123. The applied electrons are transported to the organic light emitting layer 125 to form an exciton, and when the exciton transitions from the excited state to the ground state, white light is generated, and the white light is red, green, blue, white. While passing through the color filter layer, it is emitted in full color form.

At this time, since the emitted full color light passes through the transparent first electrode 123 to the outside, the OLED 100 implements an arbitrary image.

In the dual panel type OLED 100 of the present invention, the non-pixel region in which the buffer layer 129 and the contact spacer 133 are not formed with the respective color filter layers 135a, 135b, 135c, and 135d of the second substrate 102 is described. By being formed in (NA), even if each of the color filter layers 135a, 135b, 135c, and 135d has a different thickness according to the wavelength for each color, the height of the contact spacer 133 has a constant height.

As a result, it is possible to prevent a problem in which contact defects in which the first and second substrates 101 and 102 are electrically disconnected due to the steps of the existing color filter layers 135a, 135b, 135c, and 135d are caused.

Looking at this in more detail, each of the color filter layers 135a, 135b, 135c, and 135d of red, green, blue, and white are formed to have a thickness difference according to the wavelength of each color.

At this time, each of the color filter layers 135a, 135b, 135c, and 135d has a thickness difference of at least 0.5 μm or more, and thus, the level difference of each of the color filter layers 135a, 135b, 135c, and 135d occurs.

The level difference between the color filter layers 135a, 135b, 135c, and 135d is determined by the cell gap between the first substrate 101 on which the driving thin film transistor DTr is formed and the second substrate 102 on which the organic light emitting diode E is formed. By bringing the difference, when the contact spacer 133 is formed at a uniform height, it may cause contact failure.

However, according to the exemplary embodiment of the present invention, the buffer layer 129 and the contact spacer 133 are formed in the non-pixel region NA in which the color filter layers 135a, 135b, 135c, and 135d are not formed, thereby forming each color filter layer ( 135a, 135b, 135c, 135d) due to the difference in the thickness of the contact can be prevented from occurring.

Meanwhile, the contact spacer 133 is formed of a photosensitive organic insulating material. The contact spacer 133 is formed by applying the photosensitive organic insulating material on the substrate 102 and then exposing and developing the photosensitive organic insulating material.

Although the contact spacer 133 is difficult to be formed above a certain height due to the characteristics of the organic insulating material, the contact spacer 133 preferably has a height of 3 to 6 μm or less.

The height of the contact spacer 133 is the same height as that of the existing buffer layer 129 and the contact spacer 133 are formed on the color filter layers 135a, 135b, 135c, and 135d.

Accordingly, in the dual panel type OLED 100 of the present invention, the contact spacer 133 is formed in the region between each color filter layer 135a, 135b, 135c, and 135d, thereby covering the contact spacer 133. 127 is a state in which contact with the connection electrode 117 formed on the first substrate 101 is more difficult than the case where the conventional contact spacer 133 is formed on the color filter layers 135a, 135b, 135c, and 135d. to be.

Therefore, the dummy spacer 200 is further formed between the protective layer 115 and the connection electrode 117 on the first substrate 101 of the present invention, so that the connection electrode 117 formed on the first substrate 101 is formed. The second electrode 127 is formed to easily cover the contact spacer 133.

Meanwhile, the contact spacer 133 formed on the second substrate 102 may be formed in the non-pixel area NA in which the color filter layers 135a, 135b, 135c, and 135d are not formed, without any position limitation. The dummy spacer 200 formed on the first substrate 101 is formed corresponding to the position where the contact spacer 133 is formed on the second substrate 102.

At this time, the height of the dummy spacer 200 formed on the first substrate 101 preferably corresponds to the thickness of the color filter layers 135a, 135b, 135c, and 135d formed on the second substrate 102.

The area of the end of the dummy spacer 200 is formed to have the same size as the area of the end of the contact spacer 133. More preferably, the area of the end of the dummy spacer 200 is the end of the contact spacer 133. It is preferable to form larger than the area of the part so as to have a slight bonding error when the first and second substrates 101 and 102 are bonded.

On the other hand, the dual panel OLED 100 according to an embodiment of the present invention is a first substrate 101 (hereinafter, referred to as an array substrate) and the organic light emitting diode (E) formed large driving thin film transistor (DTr) After forming each of the two substrates 102 (hereinafter, referred to as an organic light emitting diode substrate), the dual panel type OLED 100 is completed by bonding through a vacuum bonding process. This will be described in more detail with reference to FIGS. 5A to 5H and 6A to 6F.

5A to 5H are cross-sectional views of manufacturing an organic light emitting diode substrate according to an embodiment of the present invention.

First, as shown in FIG. 5A, color filter layers 135a, 135b, 135c, and 135d are formed on the substrate 102 using color resins having red, green, blue, and white colors.

In detail, first, a red resin of red, green, blue, and white color resin of the color filter is coated on the substrate 102, and then patterned through a photolithography process to apply a red color filter 135a to a desired area. ).

Next, color filters of green 135b, blue 135c, and white 135d are sequentially formed in the same manner as the red color filter 135a, and the red, green, blue, and white color filter layers 135a, 135b, 135c, 135d).

At this time, the red, green, blue, and white color filter layers 135a, 135b, 135c, and 135d are respectively spaced apart at regular intervals, and have different thicknesses according to the wavelengths of the respective colors. Steps of 135a, 135b, 135c, and 135d are generated.

Next, as shown in FIG. 5B, the step caused by the color filter layers 135a, 135b, 135c, and 135d on the red, green, blue, and white color filter layers 135a, 135b, 135c, and 135d is removed. For this purpose, a planarization process is performed on the entire surface of the substrate 102.

This is to form an overcoat layer 137 by applying a transparent resin having insulating properties on the substrate 102.

Next, as shown in FIG. 5C, a first electrode 123 is formed on the entire surface of the substrate 102 including the overcoat layer 137, and the first electrode 123 is selected from a conductive material having light transmissivity. For example, when the first electrode 123 is formed of an anode, the first electrode 123 may be made of indium tin oxide (ITO), which is light-transmitting and has a relatively high work function.

Next, as shown in FIG. 5D, a photosensitive organic insulating material is formed on the first electrode 123 on which the red, green, blue, and white color filter layers 135a, 135b, 135c, and 135d are not formed. A buffer layer 129 is formed by applying and patterning photo acryl or benzocyclobutene (BCB).

That is, the buffer layer 129 is formed in a region between each of the red, green, blue, and white color filter layers 135a, 135b, 135c, and 135d spaced apart from each other.

Next, as shown in FIG. 5E, when the photosensitive organic insulating material different from the material of the buffer layer 129 is coated on the buffer layer 129 and patterned, the substrate is cut perpendicular to the substrate 102. The cross-section has a narrow contact surface with the buffer layer 129 and forms a partition 131 having an inverted trapezoidal shape that increases toward the upper portion.

Next, as shown in FIG. 5F, a series of processes of depositing and patterning a photosensitive organic insulating material on the buffer layer 129 are performed to form a contact spacer 133 spaced apart from the partition wall 131 by a predetermined distance. do.

The contact spacer 133 has a shape in which a bottom surface close to the buffer layer 129 is wider and a width thereof narrows upward.

Next, as shown in FIG. 5G, the organic light emitting layer 125 is formed by applying or depositing an organic light emitting material on the entire surface of the substrate 102.

In this case, the organic light emitting material may be coated or sprayed using a nozzle coating device, a dispensing device, or an inkjet device to form an organic light emitting layer 125 for each pixel region, and an organic light emitting material using a shadow mask. The organic light emitting layer 125 may be formed in each pixel region by thermally depositing the same.

Next, as illustrated in FIG. 5H, each pixel is automatically formed by the partition wall 131 by depositing aluminum (Al) or aluminum alloy (AlNd), which is a metal material having a relatively small work function value, on the organic light emitting layer 125. The second electrode 127 in a separated form for each region is formed.

Thus, the organic light emitting diode substrate according to the present invention is completed.

In the above-described organic electroluminescent diode substrate of the present invention, the contact spacers 133 are formed in regions where the color filter layers 135a, 135b, 135c, and 135d are not formed, thereby providing the respective color filter layers 135a, 135b, 135c, and 135d. Even if the thickness is different depending on the wavelength for each color, the height of the contact spacer 133 has a constant height.

6A through 6F are cross-sectional views illustrating manufacturing steps of an array substrate according to an exemplary embodiment of the present invention.

As shown in FIG. 6A, a metal film is deposited on the first substrate 101 and patterned by a photolithography process to form a gate electrode 103.

Next, as shown in FIG. 6B, a gate insulating film 105 is formed on the gate electrode 103, and a pure amorphous silicon layer (not shown) and an impurity amorphous silicon layer (not shown) are sequentially deposited thereon. Thereafter, a semiconductor layer 107 including an active layer 107a of pure amorphous silicon and an ohmic contact layer 107b of amorphous silicon containing impurities is formed through a photolithography process.

Next, a metal material is deposited on the semiconductor layer 107 and patterned through a photolithography process to form source and drain electrodes 109 and 111.

Next, as shown in FIG. 6C, a protective layer 115 is formed on the source and drain electrodes 109 and 111.

Next, as shown in FIG. 6D, a series of processes of depositing and patterning an organic insulating material on the protective layer 115 are performed to form dummy spacers 200 spaced apart from each other.

 Next, as shown in FIG. 6E, the protective layer 115 is patterned to form a contact hole 115a exposing a part of the drain electrode 111, and then a metal material is deposited as shown in FIG. 6F. The array substrate is completed by forming a connection electrode 117 in contact with the drain electrode 111 by patterning the photolithography process.

In this case, the reason for forming the contact hole 115a of the protective layer 115 after forming the dummy spacer 200 first is to form the contact hole 115a of the protective layer 115 in advance and then to form the dummy spacer 200. When formed, the organic insulating material deposited on the protective layer 115 in the process of forming the dummy spacer 200 is also formed in the contact hole 115a of the protective layer 115 to block the contact hole 115a. Because there is.

  In addition, the photoresist formed on the protective layer 115 in the process of forming the contact hole 115a is also formed on the dummy spacer 200, so that the dummy spacer 200 during the photolithography process for forming the contact hole 115a. ) May be protected by the photoresist.

Thereafter, a seal pattern (160 in FIG. 2) is formed along the edge of one of the organic light emitting diode substrate and the array substrate completed through the above-described process.

Next, the two substrates are opposed to each other so that the second electrode (127 in FIG. 5H) formed on the organic light emitting diode substrate and the connecting electrode 117 formed on the array substrate are brought into contact with each other. By combining in a nitrogen atmosphere, the dual panel type OLED (100 in FIG. 2) is completed.

As described above, according to the present invention, the contact spacer (133 of FIG. 5) on the second substrate (102 of FIG. 5H) is used to form a non-pixel region in which each color filter layer (135a, 135b, 135c, 135d of FIG. 5, and the dummy spacer 200 is further formed on the first substrate 101 corresponding to the contact spacer 133 of FIG. 5, thereby forming each color filter layer (135a, 135b, and 135c of FIG. 5). Even if 135d is formed to have a different thickness according to the wavelength for each color, it is possible to prevent contact failure in which the first substrate 101 and the second substrate 102 (in FIG. 5) are electrically disconnected from each other.

The present invention is not limited to the above embodiments, and various modifications can be made without departing from the spirit of the present invention.

1 is a cross-sectional view schematically showing a cross section of a typical active matrix OLED.

Figure 2 is a graph showing the appropriate thickness of the color filter layer for each color.

3 is a cross-sectional view showing a part of a dual panel type OLED according to an embodiment of the present invention.

4 is an enlarged cross-sectional view of a portion of FIG. 3;

5A to 5H are cross-sectional views of manufacturing an organic light emitting diode substrate according to an embodiment of the present invention.

6A through 6F are cross-sectional views of manufacturing an array substrate according to an exemplary embodiment of the present invention.

Claims (15)

A first substrate on which a driving thin film transistor is formed; A connection electrode formed on the first substrate and connected to the driving thin film transistor; A second substrate positioned at a predetermined distance from the first substrate, and having an organic light emitting diode formed of a color filter layer, first and second electrodes, and an organic light emitting layer; A contact spacer formed on the second substrate and positioned between the respective color filter layers and connecting the connection electrode and the second electrode; Dual panel type organic light emitting device comprising a. The method of claim 1, And a dummy spacer formed on the first substrate and covering the connection electrode, the dummy spacer corresponding to the position where the contact spacer is formed. The method of claim 2, And a surface of the dummy spacer facing the contact spacer is larger than a width of one surface of the contact spacer facing the dummy spacer. The method of claim 2, And a height of the dummy spacer corresponds to a height of each color filter layer. The method of claim 1, And a buffer layer formed on the first electrode and formed between the color filter layers. The method of claim 5, Dual panel type organic light emitting device comprising a partition wall formed at a predetermined thickness on one side of the buffer layer. The method of claim 1, The driving thin film transistor may include a semiconductor layer, a gate electrode, a source, and a drain electrode, and the connection electrode may be in contact with the drain electrode. The method of claim 1, Each of the color filter layers includes red, green, blue, and white dual panel type organic light emitting diodes. The method of claim 1, A dual panel type organic light emitting display device having an overcoat layer formed on each of the color filter layers. Forming a driving thin film transistor on one surface of the first substrate; Forming a protective layer on the driving thin film transistor; Forming a dummy spacer on the protective layer; Forming a contact hole in the passivation layer to expose the driving thin film transistor; Forming a connection electrode contacting the driving thin film transistor through the contact hole and covering the dummy spacer; Forming each color filter layer spaced at a predetermined interval on one surface of the second substrate; Forming a first electrode on each of the color filter layers; Forming a contact spacer in an area between the respective color filter layers on the first electrode; Forming an organic light emitting layer and a second electrode on an entire surface of the second substrate including the contact spacer; Bonding the first and second substrates to contact the connection electrode and the second electrode through the contact spacer; Dual panel type organic light emitting device manufacturing method comprising a. 11. The method of claim 10, And a buffer layer formed on the first electrode and interposed between the respective color filter layers, wherein the contact spacer is formed on the buffer layer. The method of claim 11, A method for manufacturing a dual panel type organic light emitting display device comprising a partition wall formed at a predetermined thickness on one side of the buffer layer. 11. The method of claim 10, The driving thin film transistor may include a semiconductor layer, a gate electrode, a source and a drain electrode, and the second electrode may be in contact with the drain electrode. 11. The method of claim 10, Wherein each of the color filter layers comprises red, green, blue, and white. The method of claim 14, A dual panel type organic light emitting display device, the method comprising: forming an overcoat layer on each of the color filter layers.

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