KR20110010905A - Full spectrum light emitting diode, method for fabricating the same and lighting apparatus including the light emitting diodes - Google Patents

Abstract

PURPOSE: A full spectrum light emitting diode, a manufacturing method thereof, and a lighting device thereof are provided to secure full spectrum light having improve wavelength continuity by including at least four unit wavelength conversion material layers. CONSTITUTION: A light emitting diode chip(10) emits blue light or an UV. A unit wavelength conversion material layer(20) is formed on a light emitting diode chip. The unit wavelength conversion material layers convert light which is emitted from the light emitting diode chip into a different bandwidth. The unit wavelength conversion material layers have a horizontal arrangement structure which is adjacent to be each other in a horizontal direction.

Description

Full spectrum light emitting diodes, method for fabricating the same and lighting apparatus including the light emitting diodes

The present invention relates to light emitting diodes, and more particularly, to a full spectrum light emitting diode, a method for manufacturing the same, and a light emitting diode having light emitting diodes.

In life, the sun can identify things and provide the human body with necessary elements, making it one of the essential resources. However, in the evening, the supply of sunlight is cut off and artificial lighting is used. Conventionally, incandescent or fluorescent lamps are used as such artificial lighting.

Artificial lighting such as incandescent or fluorescent lamps have a disadvantage in that efficiency is low due to problems such as high power, heat generation, and short lifespan. Therefore, there is a need for an alternative artificial lighting apparatus that can solve the above problems and emit light similar to sunlight.

The technical problem to be solved by the present invention is to solve problems such as high power, heat generation and short life, and to provide a full-spectrum light emitting diode, a manufacturing method and a light emitting diode having a light-emitting diode that can secure light similar to sunlight In providing.

In addition, another technical problem to be solved by the present invention is to provide a full-spectrum light emitting diode capable of adjusting the spectrum and color temperature, a method for manufacturing the same and a light emitting device having light emitting diodes.

Technical problems of the present invention are not limited to the technical problems mentioned above, and other technical problems not mentioned will be clearly understood by those skilled in the art from the following description.

In order to achieve the above technical problem, an aspect of the present invention provides a light emitting diode. The light emitting diode is formed on the light emitting diode chip and the light emitting diode chip, and includes a plurality of unit wavelength conversion material layers for converting light emitted from the light emitting diode chip into wavelengths of different regions.

The unit wavelength converting material layers include 4 to 7 units selected from a purple converting material layer, a indigo converting material layer, a blue converting material layer, a green converting material layer, a yellow converting material layer, an orange converting material layer, and a red converting material layer. Wavelength converting material layers.

The light emitting diode chip may emit blue light or UV, and the unit wavelength conversion material layer may be converted into a blue region, a green region, a yellow region, and a red region.

The unit wavelength conversion material layers may have a horizontal array structure arranged adjacent to each other in a horizontal direction. In this case, the unit wavelength conversion material layers may have different areas. In addition, the unit wavelength conversion material layers may have a vertical array structure stacked in a vertical direction. In this case, the unit wavelength conversion material layers may have different thicknesses.

Another aspect of the present invention provides a light emitting diode manufacturing method for achieving the above technical problem. The light emitting diode manufacturing method includes the steps of providing a light emitting diode chip and forming a plurality of unit wavelength conversion material layers formed on the light emitting diode chip and converting light emitted from the light emitting diode chip into wavelengths of different regions. Steps.

The method of forming the unit wavelength conversion material layer may include applying a wavelength conversion material containing a photocurable material on the light emitting diode chip, applying an electric field to the light emitting diode chip to emit a light source, and by the light source, Curing the wavelength converting material.

Another aspect of the present invention to achieve the above technical problem provides an apparatus for emotional lighting. The emotional lighting apparatus includes a plurality of light emitting diodes having different spectra and a control controller electrically connected to each of the light emitting diodes, and controlling a light amount of each of the light emitting diodes, wherein the light emitting diodes are light emitting diodes. And a plurality of unit wavelength conversion material layers formed on the chip and the light emitting diode chip to convert light emitted from the light emitting diode chip into wavelengths of different regions.

The light emitting diode is a standard light source A (2856K), standard light source B (4874K), standard light source C (6774K), standard light source D50 (5003K), standard light source D55 (5503K), standard light source D65 (6504K), standard light source D75 ( 7504K) or a device emitting a spectrum similar to standard light source D105 (10500K).

Another aspect of the present invention to achieve the above technical problem provides an apparatus for emotional lighting. The emotional lighting apparatus includes a plurality of light emitting diodes emitting different standard light source like spectra, and a control controller electrically connected to each of the light emitting diodes to adjust an amount of light of each of the light emitting diodes.

The light emitting diode may include a light emitting diode chip and a plurality of unit wavelength conversion material layers formed on the light emitting diode chip to convert light emitted from the light emitting diode chip into wavelengths of different regions.

The light emitting diode may include one wavelength converting material layer including a plurality of wavelength converting materials having different concentrations.

As described above, the light emitting diode according to the present invention includes at least four or more unit wavelength conversion material layers for converting light emitted from the light emitting diode chip into wavelengths of different regions, thereby ensuring full spectral light with improved wavelength continuity. Can be.

In addition, since the light emitting diodes can secure light having different spectra from the light emitting diodes by changing at least one of the area and the thickness of the unit wavelength conversion material layers, the standard light sources A, B, and C are simple. , D) can implement various spectra, including similar spectra.

In addition, since the fusion spectrum of the standard light sources can be secured by using the devices emitting these standard light sources, it can be easily applied to the apparatus for emotional lighting requiring light of various spectra and color temperature.

In addition, the emotional lighting device can solve the problems of the conventional artificial lighting by using a light emitting diode with low heat generation, low power consumption, and a long lifespan.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described herein and may be embodied in other forms. Rather, the embodiments introduced herein are provided so that the disclosure may be made thorough and complete, and to fully convey the spirit of the present invention to those skilled in the art. In the drawings, the thicknesses of layers and regions are exaggerated for clarity. Like numbers refer to like elements throughout.

1A and 1B are cross-sectional views illustrating a method of manufacturing a light emitting diode according to an embodiment of the present invention.

Referring to FIG. 1A, a light emitting diode chip 10 is provided. The light emitting diode chip 10 may be a unit device individualized by dicing or one of several unit devices on a wafer before dicing. When the LED chip 10 is an individualized unit device, the unit device may be provided in a package frame. The package frame may be a package lead frame or a package substrate.

The LED chip 10 includes a first cladding layer, a second cladding layer, and an active layer interposed therebetween. The first clad layer may be a semiconductor layer in which a first type impurity is implanted, for example, an n type impurity. The n-type impurity may be Si or N, B, P and the like. The second clad layer may be a semiconductor layer implanted with a second type impurity, that is, a p-type impurity. The p-type impurity may be Mg or N, P, As, Zn, Li, Na, K, Cu and the like. The active layer may have a quantum dot structure or a multi quantum well structure.

The light emitting diode chip 10 emits light while electrons and holes recombine when an electric field is applied between the first cladding layer and the second cladding layer. The light emitting diode chip 10 may be any one of AlGaAs, InGaAs, AlGaInP, AlGaInPAs, GaN, and ZnO.

The light emitting diode chip 10 may be a horizontal device in which both the n electrode and the p electrode are formed on the upper surface, or a vertical device in which the n electrode and the p electrode are formed on the upper and lower surfaces, respectively. Can be.

The light emitting diode chip 10 may be a device emitting short wavelength light. Specifically, the light emitting diode chip 10 may be a device that emits light having a wavelength of 430 nm or less. For example, the light emitting diode chip 10 may be a device that emits blue light or UV light.

Referring to FIG. 1B, a wavelength converting material layer group including a plurality of unit wavelength converting material layers for converting light emitted from the light emitting diode chip 10 into wavelengths of different regions on the light emitting diode chip 10. 20 is formed.

The wavelength conversion material layer group 20 may be composed of at least four unit wavelength conversion material layers. Preferably, the wavelength conversion material layer group 20 is selected from a purple conversion material layer, a navy blue conversion material layer, a blue conversion material layer, a green conversion material layer, a yellow conversion material layer, an orange conversion material layer, and a red conversion material layer. There may be four to seven unit wavelength converting material layers.

2 is a plan view illustrating a method of forming a group of wavelength conversion material layers according to an embodiment of the present invention.

Referring to FIG. 2, the wavelength converting material layer group 20 may have a horizontal structure in which a plurality of unit wavelength converting material layers 22, 24, 26, and 28 are disposed horizontally in a single layer.

In this case, when the wavelength conversion material layer group 20 is composed of four unit wavelength conversion material layers, the wavelength conversion material layer group 20 may be a blue conversion material layer 22 and a green conversion material layer 24. , A yellow converting material layer 26 and a red converting material layer 28. However, the present invention is not limited thereto, and the positions of the unit wavelength converting material layers 22, 24, 26, and 28 may vary, and the number thereof may also vary.

The wavelength converting material layer group 20 configures the area and thickness of the unit wavelength converting material layers 22, 24, 26, and 28 equally, so that the amount of light converted in the four wavelength ranges is similar to each other. Can be.

Hereinafter, a method of forming the wavelength conversion material layer group 20 will be described in detail. The wavelength conversion material layer group 20 may include disposing a mask on regions other than a region where a first region, ie, a region where a blue conversion layer 22 is to be formed, is formed on the LED chip 10. Applying a blue converting material to one region to form a blue converting material layer 22, disposing a mask on regions other than a region to which the second converting material layer 24 is to be formed; Forming a green conversion material layer 24 by applying the green conversion material to the second area, and applying a mask to the other areas except for the third area, that is, the area where the yellow conversion material layer 26 is to be formed. Arranging, applying a yellow converting material to the third region to form a yellow converting material layer 26, and regions except for a region in which a fourth converting layer, i.e., the red converting material layer 26, is formed. Placing a mask on the substrate And applying the red converting material to the fourth region to form the red converting material layer 26.

The wavelength conversion material layer group 20 may be formed using a wet coating method. The wet coating method may be a blade coating method, a screen printing method, a dip coating method, a dotting method, a spin coating method, a spray method or an inkjet printing method.

The wavelength conversion material layer group 20 may be formed by further containing a photocurable material in the wavelength conversion material. In this case, after applying the wavelength conversion material, when the electric field is applied to the light emitting diode chip 10, the photocurable material is cured by the light emitted from the light emitting diode chip 10, the wavelength conversion material Layer group 20 may be formed.

The blue converting material is phosphor or sensitizer such as Sr (PO) Cl: Eu, SrMgSiO: Eu, BaMgSiO: Eu, BaMgAlO: Eu, SrPO: Eu, SrSiAlON: Eu (Fe ₄ [Fe (CN) ₆ ] ₃ ) And cobalt blue (CoO-Al ₂ O ₃ ).

The green conversion material is BaSiO: Eu, SrSiO: Eu, SrAlO: Eu, SrAlO: Eu, SrGaS: Eu, SrSiAlON: Eu, (Ca, Sr, Ba) SiNO: Eu, YSiON: Tb, YSiON: Tb, GdSiON: Phosphor of Tn or chromium oxide (Cr ₂ O ₃ ), chromium hydroxide (Cr ₂ O (OH) ₄ ), basic copper acetate (Cu (C ₂ H ₃ O ₂ ) -2Cu (OH) ₂ ), cobalt green ( It may be a pigment such as Cr ₂ O ₃ -Al ₂ O ₃ -CoO).

The red converting material may be a sulfide-based, nitride-based phosphor, or a pigment such as iron oxide (Fe ₂ O ₃ ), lead tetraoxide (Pb ₃ O ₄ ), mercury sulfide (HgS), or the like. The sulfide phosphor may be SrS: Eu or CaS: Eu, and the nitride phosphor may be SrSiN: Eu, CaSiN: Eu, CaAlSiN, (Ca, Sr, Ba) SiN: Eu, LaSiN: Eu or Sr-α- SiAlON.

The yellow conversion material may be a pigment such as YAG-based (yttrium aluminum garnet), silicate-based phosphor or lead chromate (PbCrO ₄ ), zinc chromate (ZnCrO ₄ ), sulfide-cadmium-zinc sulfide (CdS-ZnS). The YAG-based phosphor may be YAG: Ce, TbYAG: Ce, GdYAG: Ce or GdTbYAG: Ce, and the silicate-based phosphor may be methyl silicate, ethyl silicate, magnesium aluminum silicate, or aluminum silicate.

3A and 3B are a plan view and a cross-sectional view illustrating a method of forming a group of wavelength conversion material layers according to another embodiment of the present invention, respectively. Except as described later, the method of forming the wavelength conversion material layer group according to FIG. 2 is the same.

3A and 3B, the wavelength converting material layer group 20 may have a horizontal structure in which a plurality of unit wavelength converting material layers 22, 24, 26, and 28 are disposed horizontally in a single layer. have.

In this case, the wavelength conversion material layer group 20 may include a blue conversion material layer 22, a green conversion material layer 24, a yellow conversion material layer 26, and a red conversion material layer 28. However, the present invention is not limited thereto, and the positions of the unit wavelength converting material layers 22, 24, 26, and 28 may vary, and the number thereof may also vary.

The wavelength converting material layer group 20 is configured to have the same thickness of the unit wavelength converting material layers, but is converted by each of the unit wavelength converting material layers 22, 24, 26, 28 by changing an area. The amount of light can be adjusted. As a result, the light spectrum of the light emitting diode can be adjusted.

As an example, the blue conversion material layer 22 to secure a high amount of light is disposed to surround the edge of the light emitting diode chip 10, and the other green 24, yellow 26, and red conversion material layers ( 28 may be disposed by moving from the edge to the center. Accordingly, the area of the unit wavelength conversion material layers 22, 24, 26, and 28 may be different from each other, and thus the amount of light converted by the unit wavelength conversion material layers may be different from each other.

4 is a cross-sectional view illustrating a method of forming a group of wavelength conversion material layers according to another embodiment of the present invention. Except as described later, the method of forming the wavelength conversion material layer group according to FIG. 2 is the same.

Referring to FIG. 4, the wavelength changing material layer group 20 is a vertical type in which the unit wavelength converting material layers 22, 24, 26, and 28 are stacked in a direction perpendicular to the light emitting diodes 30. It may have a structure.

In this case, the area of the unit wavelength converting material layers 22, 24, 26, and 28 may be identical to each other, and the unit wavelength converting material layers 22, 24, 26, and 28 may be changed in thickness to change the unit. The amount of light converted by each of the wavelength conversion material layers 22, 24, 26, and 28 may be adjusted.

The wavelength converting material layer group 20 having the vertical structure includes forming a blue converting material layer 22 on the light emitting diode chip 10, and a green converting material layer on the blue unit converting material layer 22. (24) forming a yellow conversion material layer (26) on the green conversion material layer (24) and forming a red conversion material layer (28) on the yellow conversion material layer (26). It may include a step. However, the present invention is not limited thereto, and the positions of the unit wavelength converting material layers 22, 24, 26, and 28 may vary, and the number thereof may also vary.

5A and 5B are plan and cross-sectional views illustrating a method of forming a group of wavelength conversion material layers according to yet another exemplary embodiment of the present invention, respectively. Except as described later, the method of forming the wavelength conversion material layer group according to FIG. 4 is the same.

1B, 5A, and 5B, the wavelength converting material layer group 20 is formed in a direction in which the unit wavelength converting material layers 22, 24, 26, and 28 are perpendicular to the light emitting diodes 30. It may have a vertical structure arranged in a stack.

At least one of the area and the thickness of the unit wavelength converting material layers 22, 24, 26, and 28 may be adjusted to control the amount of light converted by each of the wavelength converting material layers 22, 24, 26, and 28. Can be adjusted.

For example, the wavelength converting material layer group 20 forms a blue converting material layer 22 on the entire surface of the upper surface of the LED chip 10, and gradually reduces the area to form green 24, yellow ( 26 and the red conversion material layer 28 may be formed. In this case, the blue conversion material layer 22 may have a thicker thickness than the green 24, the yellow 26, and the red conversion material layer 28. However, the present invention is not limited thereto, and the positions of the unit wavelength converting material layers 22, 24, 26, and 28 may vary, and the number thereof may also vary.

6 is a schematic diagram showing a spectrum of a light emitting diode according to an embodiment of the present invention.

Referring to FIG. 6, the light emitting diode may secure full spectrum light having similar amounts of light in four wavelength regions.

To implement this, the light emitting diode described with reference to FIG. 2 may be used. 2 and 6, the light emitting diode chip 10 is a chip that emits UV light, and the wavelength converting material layer group 20 disposed on the light emitting diode chip 10 is a blue converting material layer 22. By forming the same area of the green conversion material layer 24, the yellow conversion material layer 26 and the red conversion material layer 28, the blue area, the green area, the yellow area and the red area of the light emitted from the light emitting diode The light quantity of can be made almost the same. Accordingly, the light emitting diodes can secure spectral light similar to that of white light due to similar (e) amounts of light in four wavelength regions.

7 is a schematic diagram showing a spectrum of a light emitting diode according to another embodiment of the present invention.

Referring to FIG. 7, the light emitting diode may include a plurality of wavelength converting material layers that convert light into different amounts of light, thereby obtaining a full spectral light 2856K similar to the standard light source A. Referring to FIG.

To implement this, the light emitting diode described with reference to FIGS. 3A and 3B, the light emitting diode described with reference to FIG. 4, and the light emitting diode described with reference to FIGS. 5A and 5B may be used. However, hereinafter, a method of securing a full spectrum light similar to the standard light source A by changing the area according to FIGS. 3A and 3B will be described.

3A, 3B, and 7, the light emitting diode chip 10 is a chip emitting UV light, and the wavelength converting material layer group 20 disposed on the light emitting diode chip 10 is a red converting material layer. (22), yellow conversion material layer 24, green conversion material layer 26, and blue conversion material layer 28 are provided. In this case, the red conversion material layer 22 is disposed to surround the edge of the light emitting diode chip 10, and the yellow conversion material layer 24, the green conversion material layer 26, and the blue conversion material layer 28 are formed. Can be moved from the edge to the center.

Accordingly, the red region of the light emitted from the light emitting diode has a higher amount of light than the yellow region, the green region, and the blue region, so that the light emitting diode can secure full spectral light similar to that of the standard light source A.

8 is a schematic diagram showing a spectrum of a light emitting diode according to another embodiment of the present invention.

Referring to FIG. 8, the light emitting diode may include a plurality of wavelength conversion material layers for converting the light into different amounts of light to obtain full spectrum light similar to that of the standard light source B. Referring to FIG.

To implement this, the light emitting diode described with reference to FIGS. 3A and 3B, the light emitting diode described with reference to FIG. 4, and the light emitting diode described with reference to FIGS. 5A and 5B may be used. However, hereinafter, a method of securing full spectral light similar to the standard light source B by changing the thickness according to FIG. 4 will be described.

4 and 8, the light emitting diode chip 10 is a chip that emits UV light, and the wavelength converting material layer group 20 disposed on the light emitting diode chip 10 is a red converting material layer 22. And a yellow converting material layer 24, a green converting material layer 26, and a blue converting material layer 28.

In this case, the wavelength converting material layers may be arranged to be thin in the order of the red converting material layer 22, the yellow converting material layer 24, the green converting material layer 26, and the blue converting material layer 28. .

Accordingly, since the amount of light emitted from the light emitting diodes decreases in the order of red region, yellow region, green region, and blue region, the light emitting diode can secure full spectrum light similar to that of the standard light source B.

9 is a schematic diagram showing a spectrum of a light emitting diode according to another embodiment of the present invention.

Referring to FIG. 9, the light emitting diode may include a plurality of wavelength conversion material layers for converting the light into different amounts of light to obtain full spectrum light similar to that of the standard light source D55.

To implement this, the light emitting diode described with reference to FIGS. 3A and 3B, the light emitting diode described with reference to FIG. 4, and the light emitting diode described with reference to FIGS. 5A and 5B may be used. However, hereinafter, a method of securing the full spectrum light using the light emitting diodes described with reference to FIGS. 5A and 5B, which can simultaneously control thickness and area, will be described. Among these, the following describes a method of securing full spectral light by changing only the area of the thickness and area.

5A, 5B and 9, the LED chip 10 is a chip that emits UV light, and the wavelength conversion material layer group 20 disposed on the LED chip 10 is formed of a green conversion material layer ( 22), a blue conversion material layer 24, a yellow conversion material layer 26 and a red conversion material layer 28. In this case, the green conversion material layer 22 is formed to cover the entire upper surface of the light emitting diode chip 10, and the blue conversion material layer 24, the yellow conversion material layer 26 and the red conversion material layer ( 28 may be formed to gradually narrow the area from the edge toward the center.

Accordingly, the light amount of the light emitted from the light emitting diode is superior to the blue area, the yellow area, and the red area, so that the light emitting diode can secure full spectrum light similar to the standard light source D55.

10 is a schematic diagram showing a spectrum of a light emitting diode according to another embodiment of the present invention.

Referring to FIG. 10, the light emitting diode may include a plurality of wavelength converting material layers that convert light into different amounts of light, thereby obtaining full spectrum light similar to that of the standard light source D65.

To implement this, the light emitting diode described with reference to FIGS. 3A and 3B, the light emitting diode described with reference to FIG. 4, and the light emitting diode described with reference to FIGS. 5A and 5B may be used. However, hereinafter, a method of securing the full spectrum light using the light emitting diodes described with reference to FIGS. 5A and 5B, which can simultaneously control thickness and area, will be described. Among them, the following describes a method for securing full spectrum light by adjusting both the thickness and the area.

5A, 5B, and 10, the LED chip 10 is a chip emitting UV, and the wavelength conversion material layer group 20 disposed on the LED chip 10 is a green conversion material layer. (22), a blue converting material layer 24, a yellow converting material layer 26 and a red converting material layer 28. In this case, the green conversion material layer 22 is formed to cover the entire upper surface of the light emitting diode chip 10, and the green conversion material layer 22, the blue conversion material layer 24, yellow conversion material layer It may be formed thicker than the thickness of the (26) and the red conversion material layer (28).

The blue converting material layer 24, the yellow converting material layer 26, and the red converting material layer 28 are gradually narrowed from the edge toward the center and thinner than the thickness of the green converting material layer 22. Can be formed.

Accordingly, the blue region of the light emitted from the light emitting diode has a higher amount of light than the green region, the yellow region, and the red region, so that the light emitting diode can secure full spectrum light similar to that of the standard light source D65.

By adjusting the area or thickness of each of the unit wavelength converting material layers 22, 24, 26, 28, or both the area and the thickness, from the unit wavelength converting material layers 22, 24, 26, 28, Since the amount of light to be converted can be adjusted, the standard light source A (2856K), standard light source B (4874K), standard light source C (6774K), standard light source D50 (5003K), standard light source D55 (5503K), and standard light source D65 ( 6504K), a standard light source similar spectrum similar to the standard light source D75 (7504K) or standard light source D105 (10500K) can be obtained, and various other spectrums can be obtained.

In addition, it is possible to secure full spectrum light with improved wavelength continuity by including at least four light sources of different wavelengths. Since the full spectrum light has a form similar to sunlight, it may exhibit an effect of receiving illumination light using artificial light.

11 is a perspective view showing a mechanism for emotional lighting according to an embodiment of the present invention.

Referring to FIG. 11, the emotional lighting apparatus includes at least four light emitting diodes 30, 32, 34, and 36 having different spectra. The four light emitting diodes 30, 32, 24, and 26 are standard light source A (2856K), standard light source B (4874K), standard light source C (6774K), standard light source D50 (5003K), and standard light source D55 (5503K). Can be selected from standard light source similar spectra similar to standard light source D65 (6504K), standard light source D75 (7504K) or standard light source D105 (10500K). As an example, the four light emitting diodes are connected to the standard light source A pseudo spectrum light source 30, the standard light source B pseudo spectrum light source 32, the standard light source D65 pseudo spectrum light source 34, and the standard light source D105 pseudo spectrum light source 36. Can be combined.

In order to secure the standard light-like spectra, the light emitting diode is formed on a light emitting diode chip and the light emitting diode chip, and converts a plurality of unit wavelengths to convert light emitted from the light emitting diode chip into wavelengths of different regions. Material layers may be provided.

For example, the unit wavelength conversion material layers may include four selected from a purple conversion material layer, a navy blue conversion material layer, a blue conversion material layer, a green conversion material layer, a yellow conversion material layer, an orange conversion material layer, and a red conversion material layer. To 7 unit wavelength converting material layers.

Alternatively, in order to secure each of the standard light sources, the light emitting diode includes a light emitting diode chip and a single wavelength conversion material layer formed on the light emitting diode chip and having a plurality of wavelength converting materials having different concentrations. can do.

As an example, the wavelength conversion material layer may be a mixture of four to seven materials selected from the purple conversion material, indigo blue conversion material, blue conversion material, green conversion material, yellow conversion material, orange conversion material and red conversion material. It may be one wavelength converting material layer.

A control controller 50 is electrically connected to each of the light emitting diodes 30, 32, 34, and 36, and controls the amount of light of the light emitting diodes 30, 32, 34, and 36.

The emotional lighting device operates only one of the light emitting diodes 30, 32, 34, and 36 to secure a single standard light-like spectrum, or to operate the plurality of light emitting diodes 30, 32, 24, and 26. It is also possible to ensure a light source of a desired spectrum. In addition, at least two of the light emitting diodes 30, 32, 24, and 26 may be operated to ensure a light source having an intermediate color temperature or spectrum of the light emitting diodes 30, 32. In addition, the light emitting diodes 30, 32, 24, and 26 may all be turned on with the same current to secure a fusion spectrum in which the respective spectra are fused.

As described above, since the emotional lighting apparatus can control the current of each of the light emitting diodes 30, 32, 24, and 26, it is suitable for each environment in a work room, a painting room, a living room, a bedroom, a study room, a department store, an art gallery, or an exhibition hall. You can fine tune the light source.

In addition, the directivity of the light source may be adjusted by disposing a separate optical component for diffusing or condensing light on each of the light emitting diodes 30, 32, 34, and 36.

12 is a schematic diagram showing a spectrum of light emitted from the emotional lighting apparatus according to an embodiment of the present invention.

11 and 12, the lighting device according to the present invention is the four light emitting diodes (30, 32, 34, 36) as the standard light source A similar spectrum (a), standard light source B similar spectrum (b), It can be composed of elements emitting a standard light source D65 pseudo spectrum (c) and a standard light source D105 pseudo spectrum (d). In this case, the standard light source A, the standard light source B, the standard light source D65, and the standard light source D105 similar spectra are similar to the respective standard light source spectra, and represent devices having color temperatures of 2856K, 4874K, 6504K, and 10500K.

When the light emitting diodes 30, 32, 24, and 26 having such similar spectra are turned on at a target current, the sensitized lighting apparatus generates various spectral lights e similar to sunlight by fusion of each similar spectra. It can be secured.

As mentioned above, the present invention has been described in detail with reference to preferred embodiments, but the present invention is not limited to the above embodiments, and various modifications and changes may be made by those skilled in the art within the spirit and scope of the present invention. You can change it.

1A and 1B are cross-sectional views illustrating a method of manufacturing a light emitting diode according to an embodiment of the present invention.

FIG. 2 is a plan view illustrating a method of forming the wavelength converting material layer group of FIG. 1B according to an exemplary embodiment.

3A and 3B are plan and cross-sectional views illustrating a method of forming the wavelength converting material layer group of FIG. 1B, respectively, according to another exemplary embodiment.

4 is a cross-sectional view illustrating a method of forming the wavelength converting material layer group of FIG. 1B, according to another exemplary embodiment.

5A and 5B are plan and cross-sectional views illustrating a method of forming the wavelength converting material layer group of FIG. 1B, respectively, according to another exemplary embodiment.

6 is a schematic diagram showing a spectrum of a light emitting diode according to an embodiment of the present invention.

7 is a schematic diagram showing a spectrum of a light emitting diode according to another embodiment of the present invention.

8 is a schematic diagram showing a spectrum of a light emitting diode according to another embodiment of the present invention.

9 is a schematic diagram showing a spectrum of a light emitting diode according to another embodiment of the present invention.

10 is a schematic diagram showing the spectrum of a light emitting diode according to another embodiment of the present invention.

11 is a perspective view showing a mechanism for emotional lighting according to an embodiment of the present invention.

12 is a schematic diagram showing a spectrum of light emitted from the emotional lighting apparatus according to an embodiment of the present invention.

Claims (14)

Light emitting diode chip; And And a plurality of unit wavelength conversion material layers formed on the light emitting diode chip and converting light emitted from the light emitting diode chip into wavelengths of different regions. The method of claim 1, The unit wavelength converting material layers include 4 to 7 units selected from a purple converting material layer, a indigo converting material layer, a blue converting material layer, a green converting material layer, a yellow converting material layer, an orange converting material layer, and a red converting material layer. Light emitting diodes as wavelength converting material layers. The method of claim 2, The light emitting diode chip emits blue light or UV, And the unit wavelength converting material layer is converted into a blue region, a green region, a yellow region, and a red region. The method of claim 1, The unit wavelength converting material layer has a horizontal array structure arranged adjacent to each other in a horizontal direction. The method of claim 4, wherein The unit wavelength converting material layers have different areas. The method of claim 1, The unit wavelength converting material layers have a vertical array structure stacked in a vertical direction. The method of claim 6, The unit wavelength converting material layers have different thicknesses. Providing a light emitting diode chip; And And forming a plurality of unit wavelength conversion material layers formed on the light emitting diode chip and converting light emitted from the light emitting diode chip into wavelengths of different regions. The method of claim 8, The method of forming the unit wavelength converting material layer may include applying a wavelength converting material containing a photocurable material on the light emitting diode chip; Applying an electric field to the light emitting diode chip to emit a light source; And Light-emitting diode manufacturing method comprising the step of curing the wavelength conversion material by the light source. A plurality of light emitting diodes having different spectra; And A control controller electrically connected to each of the light emitting diodes to adjust an amount of light of each of the light emitting diodes, And the light emitting diode is formed on the light emitting diode chip and the light emitting diode chip, the light emitting diode chip comprises a plurality of unit wavelength conversion material layers for converting light emitted from the light emitting diode chip into wavelengths of different regions. The method of claim 10, The light emitting diode is a standard light source A (2856K), standard light source B (4874K), standard light source C (6774K), standard light source D50 (5003K), standard light source D55 (5503K), standard light source D65 (6504K), standard light source D75 ( 7504K) or standard light source D105 (10500K) is a device for emotional lighting that emits a similar spectrum. A plurality of light emitting diodes emitting different standard light source like spectra; And And a control controller electrically connected to each of the light emitting diodes to adjust an amount of light of each of the light emitting diodes. The method of claim 12, And the light emitting diode is formed on the light emitting diode chip and the light emitting diode chip, the light emitting diode chip comprises a plurality of unit wavelength conversion material layers for converting light emitted from the light emitting diode chip into wavelengths of different regions. The method of claim 12, And the light emitting diode includes a single wavelength converting material layer having a plurality of wavelength converting materials having different concentrations.

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