KR101071016B1 - Full spectrum light emitting diode, method for fabricating the same and lighting apparatus including the light emitting diodes - Google Patents
Full spectrum light emitting diode, method for fabricating the same and lighting apparatus including the light emitting diodes Download PDFInfo
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- KR101071016B1 KR101071016B1 KR1020090068247A KR20090068247A KR101071016B1 KR 101071016 B1 KR101071016 B1 KR 101071016B1 KR 1020090068247 A KR1020090068247 A KR 1020090068247A KR 20090068247 A KR20090068247 A KR 20090068247A KR 101071016 B1 KR101071016 B1 KR 101071016B1
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Abstract
Provided are a full spectrum light emitting diode, a method of manufacturing the same, and an apparatus for emotional lighting having the light emitting diodes. The light emitting diode is formed on the light emitting diode chip and the light emitting diode chip, and includes a plurality of unit wavelength conversion material layers for converting light emitted from the light emitting diode chip into wavelengths of different regions. In addition, the method of manufacturing a light emitting diode includes the steps of providing a light emitting diode chip and a plurality of unit wavelength conversion material layers formed on the light emitting diode chip and converting light emitted from the light emitting diode chip into wavelengths of different regions. Forming a step.
Full Spectrum Light Emitting Diode, Light Fixture, Wavelength Conversion Group
Description
The present invention relates to light emitting diodes, and more particularly, to a full spectrum light emitting diode, a method for manufacturing the same, and a light emitting diode having light emitting diodes.
In life, the sun can identify things and provide the human body with necessary elements, making it one of the essential resources. However, in the evening, the supply of sunlight is cut off and artificial lighting is used. Conventionally, incandescent or fluorescent lamps are used as such artificial lighting.
Artificial lighting such as incandescent or fluorescent lamps have a disadvantage in that efficiency is low due to problems such as high power, heat generation, and short lifespan. Therefore, there is a need for an alternative artificial lighting apparatus that can solve the above problems and emit light similar to sunlight.
The technical problem to be solved by the present invention is to solve problems such as high power, heat generation and short life, and to provide a full-spectrum light emitting diode, a manufacturing method and a light emitting diode having a light-emitting diode that can secure light similar to sunlight In providing.
In addition, another technical problem to be solved by the present invention is to provide a full-spectrum light emitting diode capable of adjusting the spectrum and color temperature, a method for manufacturing the same and a light emitting device having light emitting diodes.
Technical problems of the present invention are not limited to the technical problems mentioned above, and other technical problems not mentioned will be clearly understood by those skilled in the art from the following description.
In order to achieve the above technical problem, an aspect of the present invention provides a light emitting diode. The light emitting diode is formed on the light emitting diode chip and the light emitting diode chip, and includes a plurality of unit wavelength conversion material layers for converting light emitted from the light emitting diode chip into wavelengths of different regions.
The unit wavelength converting material layers include 4 to 7 units selected from a purple converting material layer, a indigo converting material layer, a blue converting material layer, a green converting material layer, a yellow converting material layer, an orange converting material layer, and a red converting material layer. Wavelength converting material layers.
The light emitting diode chip may emit blue light or UV, and the unit wavelength conversion material layer may be converted into a blue region, a green region, a yellow region, and a red region.
The unit wavelength conversion material layers may have a horizontal array structure arranged adjacent to each other in a horizontal direction. In this case, the unit wavelength conversion material layers may have different areas. In addition, the unit wavelength conversion material layers may have a vertical array structure stacked in a vertical direction. In this case, the unit wavelength conversion material layers may have different thicknesses.
Another aspect of the present invention provides a light emitting diode manufacturing method for achieving the above technical problem. The light emitting diode manufacturing method includes the steps of providing a light emitting diode chip and forming a plurality of unit wavelength conversion material layers formed on the light emitting diode chip and converting light emitted from the light emitting diode chip into wavelengths of different regions. Steps.
The method of forming the unit wavelength conversion material layer may include applying a wavelength conversion material containing a photocurable material on the light emitting diode chip, applying an electric field to the light emitting diode chip to emit a light source, and by the light source, Curing the wavelength converting material.
Another aspect of the present invention to achieve the above technical problem provides an apparatus for emotional lighting. The emotional lighting apparatus includes a plurality of light emitting diodes having different spectra and a control controller electrically connected to each of the light emitting diodes, and controlling a light amount of each of the light emitting diodes, wherein the light emitting diodes are light emitting diodes. And a plurality of unit wavelength conversion material layers formed on the chip and the light emitting diode chip to convert light emitted from the light emitting diode chip into wavelengths of different regions.
The light emitting diode is a standard light source A (2856K), standard light source B (4874K), standard light source C (6774K), standard light source D50 (5003K), standard light source D55 (5503K), standard light source D65 (6504K), standard light source D75 ( 7504K) or a device emitting a spectrum similar to standard light source D105 (10500K).
Another aspect of the present invention to achieve the above technical problem provides an apparatus for emotional lighting. The emotional lighting apparatus includes a plurality of light emitting diodes emitting different standard light source like spectra, and a control controller electrically connected to each of the light emitting diodes to adjust an amount of light of each of the light emitting diodes.
The light emitting diode may include a light emitting diode chip and a plurality of unit wavelength conversion material layers formed on the light emitting diode chip to convert light emitted from the light emitting diode chip into wavelengths of different regions.
The light emitting diode may include one wavelength converting material layer including a plurality of wavelength converting materials having different concentrations.
As described above, the light emitting diode according to the present invention includes at least four or more unit wavelength conversion material layers for converting light emitted from the light emitting diode chip into wavelengths of different regions, thereby ensuring full spectral light with improved wavelength continuity. Can be.
In addition, since the light emitting diodes can secure light having different spectra from the light emitting diodes by changing at least one of the area and the thickness of the unit wavelength conversion material layers, the standard light sources A, B, and C are simple. , D) can implement various spectra, including similar spectra.
In addition, since the fusion spectrum of the standard light sources can be secured by using the devices emitting these standard light sources, it can be easily applied to the apparatus for emotional lighting requiring light of various spectra and color temperature.
In addition, the emotional lighting device can solve the problems of the conventional artificial lighting by using a light emitting diode with low heat generation, low power consumption, and a long lifespan.
Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described herein but may be embodied in other forms. Rather, the embodiments introduced herein are provided so that the disclosure may be made thorough and complete, and to fully convey the spirit of the present invention to those skilled in the art. In the drawings, the thicknesses of layers and regions are exaggerated for clarity. Like numbers refer to like elements throughout.
1A and 1B are cross-sectional views illustrating a method of manufacturing a light emitting diode according to an embodiment of the present invention.
Referring to FIG. 1A, a light
The
The light
The light
The light
Referring to FIG. 1B, a wavelength converting material layer group including a plurality of unit wavelength converting material layers for converting light emitted from the light
The wavelength conversion
2 is a plan view illustrating a method of forming a group of wavelength conversion material layers according to an embodiment of the present invention.
Referring to FIG. 2, the wavelength converting
In this case, when the wavelength conversion
The wavelength converting
Hereinafter, a method of forming the wavelength conversion
The wavelength conversion
The wavelength conversion
The blue converting material is phosphor or sensitizer such as Sr (PO) Cl: Eu, SrMgSiO: Eu, BaMgSiO: Eu, BaMgAlO: Eu, SrPO: Eu, SrSiAlON: Eu (Fe 4 [Fe (CN) 6 ] 3 ) And cobalt blue (CoO-Al 2 O 3 ).
The green conversion material is BaSiO: Eu, SrSiO: Eu, SrAlO: Eu, SrAlO: Eu, SrGaS: Eu, SrSiAlON: Eu, (Ca, Sr, Ba) SiNO: Eu, YSiON: Tb, YSiON: Tb, GdSiON: Phosphor of Tn or chromium oxide (Cr 2 O 3 ), chromium hydroxide (Cr 2 O (OH) 4 ), basic copper acetate (Cu (C 2 H 3 O 2 ) -2Cu (OH) 2 ), cobalt green ( It may be a pigment such as Cr 2 O 3 -Al 2 O 3 -CoO).
The red converting material may be a sulfide-based, nitride-based phosphor, or a pigment such as iron oxide (Fe 2 O 3 ), lead tetraoxide (Pb 3 O 4 ), mercury sulfide (HgS), or the like. The sulfide phosphor may be SrS: Eu or CaS: Eu, and the nitride phosphor is SrSiN: Eu, CaSiN: Eu, CaAlSiN, (Ca, Sr, Ba) SiN: Eu, LaSiN: Eu or Sr-α- SiAlON.
The yellow conversion material may be a pigment such as YAG-based (yttrium aluminum garnet), silicate-based phosphor or lead chromate (PbCrO 4 ), zinc chromate (ZnCrO 4 ), sulfide-cadmium-zinc sulfide (CdS-ZnS). The YAG-based phosphor may be YAG: Ce, TbYAG: Ce, GdYAG: Ce or GdTbYAG: Ce, and the silicate-based phosphor may be methyl silicate, ethyl silicate, magnesium aluminum silicate, or aluminum silicate.
3A and 3B are a plan view and a cross-sectional view illustrating a method of forming a group of wavelength conversion material layers according to another embodiment of the present invention, respectively. Except as described later, the method of forming the wavelength conversion material layer group according to FIG. 2 is the same.
3A and 3B, the wavelength converting
In this case, the wavelength conversion
The wavelength converting
As an example, the blue
4 is a cross-sectional view illustrating a method of forming a group of wavelength conversion material layers according to another embodiment of the present invention. Except as described later, the method of forming the wavelength conversion material layer group according to FIG. 2 is the same.
Referring to FIG. 4, the wavelength changing
In this case, the area of the unit wavelength converting material layers 22, 24, 26, and 28 may be identical to each other, and the unit wavelength converting material layers 22, 24, 26, and 28 may be changed in thickness to change the unit. The amount of light converted by each of the wavelength conversion material layers 22, 24, 26, and 28 may be adjusted.
The wavelength converting
5A and 5B are plan and cross-sectional views illustrating a method of forming a group of wavelength conversion material layers according to yet another exemplary embodiment of the present invention, respectively. Except as described later, the method of forming the wavelength conversion material layer group according to FIG. 4 is the same.
1B, 5A, and 5B, the wavelength converting
At least one of the area and the thickness of the unit wavelength converting material layers 22, 24, 26, and 28 may be adjusted to control the amount of light converted by each of the wavelength converting material layers 22, 24, 26, and 28. Can be adjusted.
For example, the wavelength converting
6 is a schematic diagram showing a spectrum of a light emitting diode according to an embodiment of the present invention.
Referring to FIG. 6, the light emitting diode may secure full spectrum light having similar amounts of light in four wavelength regions.
To implement this, the light emitting diode described with reference to FIG. 2 may be used. 2 and 6, the light emitting
7 is a schematic diagram showing a spectrum of a light emitting diode according to another embodiment of the present invention.
Referring to FIG. 7, the light emitting diode may include a plurality of wavelength converting material layers that convert light into different amounts of light, thereby obtaining a full spectral light 2856K similar to the standard light source A. Referring to FIG.
To implement this, the light emitting diode described with reference to FIGS. 3A and 3B, the light emitting diode described with reference to FIG. 4, and the light emitting diode described with reference to FIGS. 5A and 5B may be used. However, hereinafter, a method of securing a full spectrum light similar to the standard light source A by changing the area according to FIGS. 3A and 3B will be described.
3A, 3B, and 7, the light emitting
Accordingly, the red region of the light emitted from the light emitting diode has a higher amount of light than the yellow region, the green region, and the blue region, so that the light emitting diode can secure full spectral light similar to that of the standard light source A.
8 is a schematic diagram showing a spectrum of a light emitting diode according to another embodiment of the present invention.
Referring to FIG. 8, the light emitting diode may include a plurality of wavelength conversion material layers for converting the light into different amounts of light to obtain full spectrum light similar to that of the standard light source B. Referring to FIG.
To implement this, the light emitting diode described with reference to FIGS. 3A and 3B, the light emitting diode described with reference to FIG. 4, and the light emitting diode described with reference to FIGS. 5A and 5B may be used. However, hereinafter, a method of securing full spectral light similar to the standard light source B by changing the thickness according to FIG. 4 will be described.
4 and 8, the light emitting
In this case, the wavelength converting material layers may be arranged to be thin in the order of the red converting
Accordingly, since the amount of light emitted from the light emitting diodes decreases in the order of red region, yellow region, green region, and blue region, the light emitting diode can secure full spectrum light similar to that of the standard light source B.
9 is a schematic diagram showing a spectrum of a light emitting diode according to another embodiment of the present invention.
Referring to FIG. 9, the light emitting diode may include a plurality of wavelength conversion material layers for converting the light into different amounts of light to obtain full spectrum light similar to that of the standard light source D55.
To implement this, the light emitting diode described with reference to FIGS. 3A and 3B, the light emitting diode described with reference to FIG. 4, and the light emitting diode described with reference to FIGS. 5A and 5B may be used. However, hereinafter, a method of securing the full spectrum light using the light emitting diodes described with reference to FIGS. 5A and 5B, which can simultaneously control thickness and area, will be described. Among these, the following describes a method of securing full spectral light by changing only the area of the thickness and area.
5A, 5B and 9, the
Accordingly, the light amount of the light emitted from the light emitting diode is superior to the blue area, the yellow area, and the red area, so that the light emitting diode can secure full spectrum light similar to the standard light source D55.
10 is a schematic diagram showing a spectrum of a light emitting diode according to another embodiment of the present invention.
Referring to FIG. 10, the light emitting diode may include a plurality of wavelength converting material layers that convert light into different amounts of light, thereby obtaining full spectrum light similar to that of the standard light source D65.
To implement this, the light emitting diode described with reference to FIGS. 3A and 3B, the light emitting diode described with reference to FIG. 4, and the light emitting diode described with reference to FIGS. 5A and 5B may be used. However, hereinafter, a method of securing the full spectrum light using the light emitting diodes described with reference to FIGS. 5A and 5B, which can simultaneously control thickness and area, will be described. Among them, the following describes a method for securing full spectrum light by adjusting both the thickness and the area.
5A, 5B, and 10, the
The blue converting
Accordingly, the blue region of the light emitted from the light emitting diode has a higher amount of light than the green region, the yellow region, and the red region, so that the light emitting diode can secure full spectrum light similar to that of the standard light source D65.
By adjusting the area or thickness of each of the unit wavelength converting material layers 22, 24, 26, 28, or both the area and the thickness, from the unit wavelength converting material layers 22, 24, 26, 28, Since the amount of light to be converted can be adjusted, the standard light source A (2856K), standard light source B (4874K), standard light source C (6774K), standard light source D50 (5003K), standard light source D55 (5503K), and standard light source D65 ( 6504K), a standard light source similar spectrum similar to the standard light source D75 (7504K) or standard light source D105 (10500K) can be obtained, and various other spectrums can be obtained.
In addition, it is possible to secure full spectrum light with improved wavelength continuity by including at least four light sources of different wavelengths. Since the full spectrum light has a form similar to sunlight, it may exhibit an effect of receiving illumination light using artificial light.
11 is a perspective view showing a mechanism for emotional lighting according to an embodiment of the present invention.
Referring to FIG. 11, the emotional lighting apparatus includes at least four light emitting
In order to secure the standard light-like spectra, the light emitting diode is formed on a light emitting diode chip and the light emitting diode chip, and converts a plurality of unit wavelengths to convert light emitted from the light emitting diode chip into wavelengths of different regions. Material layers may be provided.
For example, the unit wavelength conversion material layers may include four selected from a purple conversion material layer, a navy blue conversion material layer, a blue conversion material layer, a green conversion material layer, a yellow conversion material layer, an orange conversion material layer, and a red conversion material layer. To 7 unit wavelength converting material layers.
Alternatively, in order to secure each of the standard light sources, the light emitting diode includes a light emitting diode chip and a single wavelength conversion material layer formed on the light emitting diode chip and having a plurality of wavelength converting materials having different concentrations. can do.
As an example, the wavelength conversion material layer may be a mixture of four to seven materials selected from the purple conversion material, indigo blue conversion material, blue conversion material, green conversion material, yellow conversion material, orange conversion material and red conversion material. It may be one wavelength converting material layer.
A
The emotional lighting device operates only one of the
As described above, since the emotional lighting apparatus can control the current of each of the
In addition, the directivity of the light source may be adjusted by disposing a separate optical component for diffusing or condensing light on each of the
12 is a schematic diagram showing a spectrum of light emitted from the emotional lighting apparatus according to an embodiment of the present invention.
11 and 12, the lighting device according to the present invention is the four light emitting diodes (30, 32, 34, 36) as the standard light source A similar spectrum (a), standard light source B similar spectrum (b), It can be composed of elements emitting a standard light source D65 pseudo spectrum (c) and a standard light source D105 pseudo spectrum (d). In this case, the standard light source A, the standard light source B, the standard light source D65, and the standard light source D105 similar spectra are similar to the respective standard light source spectra, and represent devices having color temperatures of 2856K, 4874K, 6504K, and 10500K.
When the
As mentioned above, the present invention has been described in detail with reference to preferred embodiments, but the present invention is not limited to the above embodiments, and various modifications and changes may be made by those skilled in the art within the spirit and scope of the present invention. You can change it.
1A and 1B are cross-sectional views illustrating a method of manufacturing a light emitting diode according to an embodiment of the present invention.
FIG. 2 is a plan view illustrating a method of forming the wavelength converting material layer group of FIG. 1B according to an exemplary embodiment.
3A and 3B are plan and cross-sectional views illustrating a method of forming the wavelength converting material layer group of FIG. 1B, respectively, according to another exemplary embodiment.
4 is a cross-sectional view illustrating a method of forming the wavelength converting material layer group of FIG. 1B, according to another exemplary embodiment.
5A and 5B are plan and cross-sectional views illustrating a method of forming the wavelength converting material layer group of FIG. 1B, respectively, according to another exemplary embodiment.
6 is a schematic diagram showing a spectrum of a light emitting diode according to an embodiment of the present invention.
7 is a schematic diagram showing a spectrum of a light emitting diode according to another embodiment of the present invention.
8 is a schematic diagram showing a spectrum of a light emitting diode according to another embodiment of the present invention.
9 is a schematic diagram showing a spectrum of a light emitting diode according to another embodiment of the present invention.
10 is a schematic diagram showing the spectrum of a light emitting diode according to another embodiment of the present invention.
11 is a perspective view showing a mechanism for emotional lighting according to an embodiment of the present invention.
12 is a schematic diagram showing a spectrum of light emitted from the emotional lighting apparatus according to an embodiment of the present invention.
Claims (14)
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JP2007142318A (en) * | 2005-11-22 | 2007-06-07 | Toyoda Gosei Co Ltd | Light-emitting element |
KR100818162B1 (en) * | 2007-05-14 | 2008-03-31 | 루미마이크로 주식회사 | White led device capable of adjusting correlated color temperature |
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JP2007142318A (en) * | 2005-11-22 | 2007-06-07 | Toyoda Gosei Co Ltd | Light-emitting element |
KR100818162B1 (en) * | 2007-05-14 | 2008-03-31 | 루미마이크로 주식회사 | White led device capable of adjusting correlated color temperature |
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