KR20100138541A - A manufacturing method of photoresist patterns - Google Patents

A manufacturing method of photoresist patterns Download PDF

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Publication number
KR20100138541A
KR20100138541A KR1020090057124A KR20090057124A KR20100138541A KR 20100138541 A KR20100138541 A KR 20100138541A KR 1020090057124 A KR1020090057124 A KR 1020090057124A KR 20090057124 A KR20090057124 A KR 20090057124A KR 20100138541 A KR20100138541 A KR 20100138541A
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KR
South Korea
Prior art keywords
photoresist pattern
organic solvent
solution
photoresist
cleaning
Prior art date
Application number
KR1020090057124A
Other languages
Korean (ko)
Inventor
최철찬
Original Assignee
주식회사 하이닉스반도체
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Publication date
Application filed by 주식회사 하이닉스반도체 filed Critical 주식회사 하이닉스반도체
Priority to KR1020090057124A priority Critical patent/KR20100138541A/en
Publication of KR20100138541A publication Critical patent/KR20100138541A/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/092—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by backside coating or layers, by lubricating-slip layers or means, by oxygen barrier layers or by stripping-release layers or means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3042—Imagewise removal using liquid means from printing plates transported horizontally through the processing stations
    • G03F7/3057—Imagewise removal using liquid means from printing plates transported horizontally through the processing stations characterised by the processing units other than the developing unit, e.g. washing units
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3042—Imagewise removal using liquid means from printing plates transported horizontally through the processing stations
    • G03F7/3071—Process control means, e.g. for replenishing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like

Abstract

The present invention relates to a method of forming a photoresist pattern that can improve a phenomenon in which photoresist patterns collapse.

In the present invention, not only the cleaning step using the surfactant addition solution before the drying step, but also the surface of the photoresist pattern by surface treatment with an organic solvent before the cleaning step using the surfactant addition solution The surface tension caused by the solution can be reduced. Thus, the present invention can reduce the elastic deformation of the photoresist pattern even if the cleaning solution is removed, it is possible to improve the phenomenon that the photoresist pattern collapses.

Description

A photoresist pattern formation method

The present invention relates to a method of forming a photoresist pattern, and more particularly, to a method of forming a photoresist pattern capable of stably forming a photoresist pattern for forming a fine pattern of a semiconductor device.

The patterns of the semiconductor device may be formed by directly patterning patterns of the semiconductor device by etching an etching target layer using a photoresist pattern, or by patterning hard mask patterns used as an etching mask for patterning patterns of the semiconductor device. The photoresist pattern is formed through a photolithography process including an exposure and development process.

Meanwhile, due to the high integration of semiconductor devices, as the patterns of the semiconductor devices become finer, line widths and intervals of photoresist patterns for forming them are reduced. Accordingly, the aspect ratio of the space defined between the photoresist patterns is also increasing.

As the aspect ratio of the space defined between the photoresist patterns increases, a collapse of the photoresist pattern occurs in the process of forming the photoresist pattern.

1 is a diagram for describing a phenomenon in which a photoresist pattern falls.

Referring to FIG. 1, a photoresist film deposition process, an exposure process, a development process, a cleaning process, and a drying process may be sequentially performed to form the photoresist pattern 13 on the semiconductor substrate 11 including the etching target layer. Conduct. However, a phenomenon in which the photoresist pattern 13 falls down during the drying process occurs. As described above, the phenomenon in which the photoresist pattern 13 falls is deepened as the patterns of the semiconductor device become finer, and as the pattern of the semiconductor device becomes finer, it is difficult to stably form the photoresist patterns 13.

The present invention provides a method of forming a photoresist pattern that can improve the phenomenon that the photoresist patterns fall.

The method of forming a photoresist pattern according to the present invention comprises the steps of forming a photoresist film on top of a semiconductor substrate, patterning the photoresist film by an exposure and development process to form a photoresist pattern, and forming a surface of the photoresist pattern. Surface treatment using an organic solvent, cleaning the semiconductor substrate including the photoresist pattern surface treated with the organic solvent with a cleaning solution containing a surfactant, and drying the semiconductor substrate. .

In the step of surface-treating the surface of the photoresist pattern using an organic solvent, the organic solvent is preferably in a vapor state.

Surface treatment of the surface of the photoresist pattern using an organic solvent is preferably carried out in a vacuum and at a temperature higher than the evaporation temperature of the organic solvent.

The organic solvent preferably contains at least one of methanol, ethanol, toluene, benzene and ether.

In the step of surface-treating the surface of the photoresist pattern using an organic solvent, an organic solvent layer is formed on the surface of the photoresist pattern.

Before the surface treatment of the surface of the photoresist pattern using an organic solvent, the step of cleaning the semiconductor substrate including the photoresist pattern using a cleaning solution containing DI (Deionized water) solution may be further performed. have.

The present invention not only performs a cleaning step using a surfactant addition solution before the drying step, but also cleans the surface of the photoresist pattern by using an organic solvent before performing the cleaning step using the surfactant addition solution. The surface tension caused by the solution can be reduced. Thus, the present invention can reduce the elastic deformation of the photoresist pattern even if the cleaning solution is removed, it is possible to improve the phenomenon that the photoresist pattern collapses.

Hereinafter, with reference to the accompanying drawings will be described a preferred embodiment of the present invention. However, the present invention is not limited to the embodiments described below, but may be implemented in various forms, and the scope of the present invention is not limited to the embodiments described below. Only this embodiment is provided to complete the disclosure of the present invention and to fully inform those skilled in the art, the scope of the present invention should be understood by the claims of the present application.

2 and 3 are diagrams for explaining a method of forming a photoresist pattern.

Referring to FIGS. 2 and 3, the photoresist pattern 303 is formed by depositing a photoresist film on the semiconductor substrate 301 including an etching target layer, followed by an exposure step (S1), a developing step (S3), and a DI solution. It can be formed by sequentially performing a washing step (S5) using deionized water, a washing step (S7) and a drying step (S9) using a surfactant (surfactant) addition solution.

The phenomenon in which the photoresist patterns 303 collapse is generally because the surface tension of the DI solution used in the cleaning process S5 is large, and the elastic deformation of the photoresist pattern 303 becomes large when the DI solution is removed through a subsequent drying process. Occurs. Accordingly, when the surface tension of the solution used in the cleaning process is reduced, the phenomenon in which the photoresist pattern 303 collapses can be improved.

As described above, before the drying process S9 is performed to reduce the elastic deformation of the photoresist pattern 303 due to the removal of the cleaning solution in the drying process S9, a cleaning process S7 using a surfactant-added solution may be added. Can be. The surfactant addition solution is a mixture of a surfactant in a DI solution, and has a lower surface tension energy than a pure DI solution. Accordingly, since the surface tension by the cleaning solution is reduced during the cleaning process (S7) using the surfactant solution, it is possible to reduce the elastic deformation of the photoresist pattern 303 due to the removal of the cleaning solution during the subsequent drying process (S9). The phenomenon that the photoresist pattern collapses can be improved.

The H 2 O component is also contained in the above-described surfactant addition solution. Accordingly, even though the cleaning process (S7) using the surfactant addition solution is added, the surface tension due to the H 2 O component in the surfactant addition solution still exists, and thus there is a limit in improving the phenomenon in which the photoresist pattern 303 collapses. The present invention provides a method of forming a photoresist pattern that can overcome these limitations.

4 is a flowchart illustrating a method of forming a photoresist pattern according to the present invention. 5A to 5C are cross-sectional views illustrating a method of forming a photoresist pattern according to the present invention.

4 and 5A, first, a photoresist film is deposited on an upper portion of a semiconductor substrate 501 including an etching target layer, and then an exposure process S11 and a development process S13 are sequentially performed to form a photoresist pattern ( 503 patterns.

Exposure process S11 is performed using the exposure mask containing a light shielding pattern. Through the exposure step S11, the photoresist film is divided into a non-exposed part and an exposed part. The non-exposed part and the exposed part have different solubility in the developer.

The developing step (S13) is performed using a developing solution such as TMAH (Tetramethylammonium hydroxide). Here, when the photoresist film is positive, the non-exposed part is removed through the developer and the exposed part remains to form the photoresist pattern 503. On the other hand, when the photoresist film is negative, the exposed portion is removed through the developer and the non-exposed portion remains to form the photoresist pattern 503.

After the above-described developing step (S13), a washing step (S15) using a DI solution is performed.

4 and 5B, the surface treatment step S17 is performed after the cleaning step S15 using the DI solution. Surface treatment S17 is performed by spraying the organic solvent of a vapor state on the surface of the photoresist pattern 503. FIG. This surface treatment S17 can be carried out using an oven in the same track equipment as in steps S13 and S15, or in a separately mounted unit.

As the organic solvent used in the surface treatment (S17), it is preferable to use at least one of alcohol series such as methanol and ethanol having excellent reactivity with the surfactant, or toluene, benzene and ether. The surface treatment (S17) is preferably carried out in equipment maintained above the evaporation temperature of the organic solvent, and is preferably carried out while maintaining a vacuum state.

As described above, a fine organic solvent layer 505 may be formed on the surface of the photoresist pattern 503 by a surface treatment using an organic solvent (S17).

Next, the washing process (S19) using surfactant addition solution is performed.

As described above with reference to FIGS. 2 and 3, the cleaning process using the surfactant-added solution (S19) may be performed during the subsequent drying process (S21) by reducing the surface tension of the cleaning solution to improve the phenomenon in which the photoresist patterns 503 fall. This is to reduce the elastic deformation of the photoresist patterns 503 due to the removal of the solution.

In the present invention, the surface of the photoresist pattern 503 surface-treated with the organic solvent is more reactive with the surfactant than the H 2 O included in the surfactant addition solution during the cleaning process (S19) using the surfactant addition solution. Big. Accordingly, the present invention can reduce the surface tension due to H 2 O on the surface of the photoresist pattern 503, it is possible to reduce the surface tension due to the surfactant addition solution.

4 and 5B, the drying process S21 is performed to remove the cleaning solution including the DI solution or the surfactant-added solution to complete the process of forming the photoresist pattern 503. In this case, the organic solvent layer 505 may remain on the surface of the photoresist pattern 503.

The drying process S21 may be performed by a spin dry method of removing the cleaning liquid while rotating the semiconductor substrate 501.

As described above, in the present invention, the surface of the photoresist pattern may be formed by using an organic solvent before the cleaning process using the surfactant-added solution before the drying process and the cleaning process using the surfactant-added solution. By surface treatment, the surface tension by the cleaning solution can be reduced. Thus, the present invention can reduce the elastic deformation of the photoresist pattern even if the cleaning solution is removed, it is possible to improve the phenomenon that the photoresist pattern collapses.

Although the technical spirit of the present invention described above has been described in detail in a preferred embodiment, it should be noted that the above-described embodiment is for the purpose of description and not of limitation. In addition, the present invention will be understood by those of ordinary skill in the art that various embodiments are possible within the scope of the technical idea of the present invention.

BRIEF DESCRIPTION OF DRAWINGS FIG. 1 is a diagram for explaining a phenomenon in which a photoresist pattern falls. FIG.

2 and 3 are diagrams for explaining a method of forming a photoresist pattern.

4 is a flowchart illustrating a method of forming a photoresist pattern according to the present invention.

5A to 5C are cross-sectional views illustrating a method of forming a photoresist pattern according to the present invention.

<Explanation of symbols for the main parts of the drawings>

301 and 501 semiconductor substrates 303 and 503 photoresist pattern

505: organic solvent layer

Claims (6)

Forming a photoresist film on the semiconductor substrate; Patterning the photoresist film by an exposure and development process to form a photoresist pattern; Surface-treating the surface of the photoresist pattern using an organic solvent; Cleaning the semiconductor substrate including the photoresist pattern surface-treated with the organic solvent with a cleaning solution containing a surfactant; And And drying the semiconductor substrate. The method of claim 1, In the step of surface-treating the surface of the photoresist pattern using an organic solvent, the organic solvent is a vapor phase photoresist pattern forming method. The method of claim 1, Surface treatment of the surface of the photoresist pattern using an organic solvent is performed in a vacuum and at a temperature higher than the evaporation temperature of the organic solvent. The method of claim 1, The organic solvent is a photoresist pattern forming method comprising at least one of methanol, ethanol, toluene, benzene and ether. The method of claim 1, And forming an organic solvent layer on the surface of the photoresist pattern in the step of surface treating the surface of the photoresist pattern using an organic solvent. The method of claim 1, Before the surface treatment of the surface of the photoresist pattern using an organic solvent, And cleaning the semiconductor substrate including the photoresist pattern using a cleaning solution including a DI (Deionized water) solution.
KR1020090057124A 2009-06-25 2009-06-25 A manufacturing method of photoresist patterns KR20100138541A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101523540B1 (en) * 2006-12-25 2015-05-28 후지필름 가부시키가이샤 Pattern forming method
US9158204B2 (en) 2012-08-08 2015-10-13 Samsung Electronics Co., Ltd. Photo lithographic rinse solution and method of manufacturing a semiconductor device using the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101523540B1 (en) * 2006-12-25 2015-05-28 후지필름 가부시키가이샤 Pattern forming method
US9158204B2 (en) 2012-08-08 2015-10-13 Samsung Electronics Co., Ltd. Photo lithographic rinse solution and method of manufacturing a semiconductor device using the same

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