KR20080001479A - Method for manufacturing photo mask and system for removing resist particle - Google Patents

Method for manufacturing photo mask and system for removing resist particle Download PDF

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Publication number
KR20080001479A
KR20080001479A KR1020060059948A KR20060059948A KR20080001479A KR 20080001479 A KR20080001479 A KR 20080001479A KR 1020060059948 A KR1020060059948 A KR 1020060059948A KR 20060059948 A KR20060059948 A KR 20060059948A KR 20080001479 A KR20080001479 A KR 20080001479A
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South Korea
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pattern
hydrogen
resist
photo mask
manufacturing
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KR1020060059948A
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Korean (ko)
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이동욱
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주식회사 하이닉스반도체
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Publication of KR20080001479A publication Critical patent/KR20080001479A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H01L21/449—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428 involving the application of mechanical vibrations, e.g. ultrasonic vibrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

Abstract

A method for manufacturing a photomask is provided to completely remove reaction products and contaminants generated on a resist pattern while not adversely affecting a light protection film and not causing damage on the critical dimension of a resist pattern. A method for manufacturing a photomask comprises: a step(S10) of forming a layer to be etched on a substrate; a step(S20) of coating the top of the layer to be etched with resist, followed by exposure and development, to form a resist pattern; a step(S30) of providing the resultant product with hydrogen-added water to clean the product; a step(S40) of carrying out etching to form a pattern; and a step(S50) of removing the resist pattern. The hydrogen-added water is ultrapure water in which hydrogen is dissolved at a concentration of 1.0-2.0 ppm.

Description

포토 마스크의 제조 방법 및 이의 레지스트 반응 생성물 제거 장치{Method for manufacturing photo mask and system for removing resist particle}Method for manufacturing photo mask and system for removing resist particle thereof

도 1은 본 발명에 따른 포토 마스크 제조 방법을 순차적으로 나타낸 흐름도,1 is a flowchart sequentially illustrating a method of manufacturing a photomask according to the present invention;

도 2a 내지 도 2e는 본 발명의 일 실시예에 따른 포토 마스크의 제조 공정을 순차적으로 나타낸 공정 순서도, 2A to 2E are process flowcharts sequentially illustrating a process of manufacturing a photomask according to an embodiment of the present invention;

도 3은 본 발명에 따른 포토 마스크의 제조 방법에서 레지스트 현상시 발생되는 반응 생성물을 제거하기 위한 장치를 간략하게 나타낸 도면.3 is a simplified view of an apparatus for removing a reaction product generated during resist development in a method of manufacturing a photomask according to the present invention.

*도면의 주요 부분에 대한 부호의 설명** Description of the symbols for the main parts of the drawings

10 : 투과 기판 12 : 광 반투과막10 transmission substrate 12 light semitransmissive film

14 : 차광막 16 : 레지스트 패턴14 shading film 16 resist pattern

18 : 반응 생성물 및 오염 물질18: reaction products and contaminants

20 : 회전 척 22 : 수소수20: rotary chuck 22: hydrogen water

24 : 공급 수단 26 : 초음파 발생 수단24 supply means 26 ultrasonic generating means

본 발명은 포토 마스크의 제조 방법에 관한 것으로서, 특히 포토 마스크의 패터닝 공정시 발생되는 반응 생성물 및 오염 물질에 의한 패턴 결함을 방지할 수 있는 포토 마스크의 패턴 제조 방법 및 이의 레지스트 반응 생성물 제거 장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a photomask, and more particularly, to a pattern manufacturing method of a photomask capable of preventing pattern defects caused by reaction products and contaminants generated during a patterning process of a photomask and a resist reaction product removing apparatus thereof. will be.

일반적으로, 반도체 제조공정 중 포토 리소그래피의 포토 마스크(photo mask)공정은, 웨이퍼상에 실제로 필요로 하는 회로를 구현하기 위하여 설계하고자 하는 회로 패턴이 그려진 레티클(reticle) 또는 마스크(mask)에 빛을 조사하여 웨이퍼상에 도포된 레지스트(resist)를 감광시킴으로써 원하는 패턴을 웨이퍼 상에 형성하는 것이다.In general, a photo mask process of photolithography in a semiconductor manufacturing process is performed by applying a light to a reticle or a mask on which a circuit pattern intended to be designed to implement a circuit actually required on a wafer is drawn. The desired pattern is formed on the wafer by irradiating a photoresist applied on the wafer.

포토 마스크는 주로, 투명 기판상에 차광막 패턴으로 형성되는데, 차광막의 재료는 크롬이 일반적으로 사용된다. 더욱이 최근에는 포토마스크 패턴의 해상도를 향상시키기 위하여 위상 쉬프트 마스크가 실용화되고 있다. 위상 쉬프트 마스크로서, 구멍(hole), 점(dot)의 고해상도 패턴에 적합한 하프톤형 위상 쉬프트 마스크가 널리 알려져 있다. 이러한 하프톤형 위상 쉬프트 마스크는 투명 기판상에 약 180°의 위상 쉬프트량을 가지는 광 반투과막 패턴을 형성한 것으로서, 주로 몰리브덴 등으로 사용한다.A photomask is mainly formed in a light shielding film pattern on a transparent substrate, and the material of a light shielding film is chromium generally used. Furthermore, in recent years, phase shift masks have been put to practical use in order to improve the resolution of photomask patterns. As the phase shift mask, a halftone phase shift mask suitable for a high resolution pattern of holes and dots is widely known. The halftone phase shift mask is a light semitransmissive film pattern having a phase shift amount of about 180 ° on a transparent substrate, and is mainly used for molybdenum or the like.

즉, 포토 마스크의 패턴 형성은 투명 기판에 차광막, 혹은 광 반투과막을 형성하고 그 위에 레지스트를 도포하고 이를 노광 및 현상하여 레지스트 패턴을 형성한 후에 레지스트 패턴에 의해 광반투과막, 차광막을 식각하여 패턴을 형성한다.That is, the pattern of the photo mask is formed by forming a light blocking film or a light semitransmissive film on a transparent substrate, applying a resist thereon, exposing and developing the resist to form a resist pattern, and then etching the light semitransmissive film and the light blocking film by the resist pattern. To form.

하지만, 레지스트 패턴을 위한 현상 공정과 식각 공정시 반응물 생성과 기타 오염 물질에 의해 패턴 결함을 발생하기 때문에 포토 마스크 패턴의 질을 현저히 저하시키게 된다. 포토 마스크의 패턴을 수정하여서도 결함이 발생된 영역의 투과율이 저하되는 경우가 있어 웨이퍼 노광 공정시 불량을 야기시킨다.However, the quality of the photomask pattern is significantly degraded because pattern defects are generated by the formation of reactants and other contaminants during the development process and etching process for the resist pattern. Even if the pattern of the photo mask is corrected, the transmittance of the region where the defect is generated may decrease, causing defects in the wafer exposure process.

이를 방지하기 위하여 레지스트 패턴을 위한 현상 공정 후 반응 생성물을 제거하기 위한 세정 공정을 진행할 경우 주로 황산(H2SO4) 및 암모니아(NH4OH) 희석액에 의해 차광막 패턴의 임계 치수(CD : Critical Dimension) 변화 및 패턴의 손상을 억제하기 매우 힘들다는 단점이 있다.In order to prevent this, when the cleaning process is performed to remove the reaction product after the development process for the resist pattern, the critical dimension of the light shielding film pattern (CD: Critical Dimension) mainly by dilute solution of sulfuric acid (H 2 SO 4 ) and ammonia (NH 4 OH) ) Has the disadvantage that it is very difficult to suppress the change and damage of the pattern.

본 발명의 목적은 상기와 같은 종래 기술의 문제점을 해결하기 위하여 포토 마스크의 패턴 제조 공정시 레지스트를 현상하고 난 후에 수소 가스가 용해된 초순수로 현상 반응 생성물 및 오염 물질을 제거함으로써 현상 공정에 의해 발생되는 포토 마스크 패턴 결함을 미연에 방지할 수 있는 포토 마스크의 제조 방법을 제공하는데 있다.An object of the present invention is generated by the development process by removing the development reaction product and contaminants with ultrapure water in which hydrogen gas is dissolved after developing the resist in the pattern manufacturing process of the photo mask to solve the above problems of the prior art The present invention provides a method of manufacturing a photomask that can prevent photomask pattern defects.

본 발명의 다른 목적은, 포토 마스크의 제조 공정시 사용되는 레지스트를 현상하고 난 후에 수소 가스가 용해된 초순수를 공급하여 현상 반응 생성물 및 오염 물질을 제거함으로써 현상 공정에 의해 발생되는 포토 마스크 패턴 결함을 미연에 방지할 수 있는 포토 마스크의 레지스트 반응 생성물 제거 장치를 제공하는데 있 다.Another object of the present invention is to develop photoresist pattern defects caused by the developing process by removing the development reaction product and contaminants by supplying ultrapure water in which hydrogen gas is dissolved after developing the resist used in the manufacturing process of the photomask. The present invention provides a device for removing a resist reaction product of a photo mask that can be prevented in advance.

상기 목적을 달성하기 위하여 본 발명은, 포토 마스크의 패턴을 제조하는 방법에 있어서, 투과 기판에 식각 대상층을 형성하는 단계와, 식각 대상층 상부에 레지스트를 도포하고 이를 노광 및 현상하여 레지스트 패턴을 형성하는 단계와, 결과물에 수소수를 공급하여 세정하는 단계와, 식각 대상층을 식각하여 패턴을 형성하는 단계와, 레지스트 패턴을 제거하는 단계를 포함한다.In order to achieve the above object, the present invention, in the method for manufacturing a pattern of the photo mask, forming an etch target layer on the transparent substrate, and applying a resist on the etch target layer, the exposure and development to form a resist pattern And a step of supplying hydrogen water to the resultant, washing the resultant, etching the etching target layer to form a pattern, and removing the resist pattern.

상기 다른 목적을 달성하기 위하여 본 발명은, 포토 마스크의 패턴을 제조하는 장치에 있어서, 식각 대상층 및 레지스트 패턴이 순차 형성된 투과 기판을 회전시키는 척과, 레지스트 패턴에 수소수를 공급하는 공급 수단을 구비한다.In order to achieve the above another object, the present invention provides a device for manufacturing a pattern of a photo mask, comprising: a chuck for rotating a transmissive substrate on which an etch target layer and a resist pattern are sequentially formed; .

이하, 첨부한 도면을 참조하여 본 발명의 바람직한 실시예에 대해 상세하게 설명하고자 한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도 1은 본 발명에 따른 포토 마스크 제조 방법을 순차적으로 나타낸 흐름도이다.1 is a flowchart sequentially illustrating a method of manufacturing a photomask according to the present invention.

도 1에 도시된 바와 같이, 본 발명에 따른 포토 마스크 제조 방법은 다음과 같이 진행된다.As shown in FIG. 1, the photomask manufacturing method according to the present invention proceeds as follows.

우선, 투과 기판에 식각 대상층으로서, 몰리브덴 등의 광 반투과막 및 크롬 등의 차광막을 형성한다.(S10)First, a light semitransmissive film such as molybdenum and a light shielding film such as chromium are formed on the transparent substrate as an etching target layer. (S10)

식각 대상층 상부에 레지스트를 도포하고 이를 노광 및 현상하여 레지스트 패턴을 형성한다.(S20)A resist is coated on the etching target layer, and the resist is exposed and developed to form a resist pattern.

레지스트 패턴이 형성된 투과 기판에 수소수를 공급하여 레지스트 패턴의 현상 공정시 발생된 반응 생성물을 세정한다.(S30) 여기서, 수소수는 수소가 용해된 초순수이다. 이때, 초순수에 용해되는 수소는 1.0ppm∼2.0ppm 농도를 갖는다.Hydrogen water is supplied to the transmissive substrate on which the resist pattern is formed to clean the reaction product generated during the development process of the resist pattern. (S30) Here, hydrogen water is ultrapure water in which hydrogen is dissolved. At this time, hydrogen dissolved in ultrapure water has a concentration of 1.0 ppm to 2.0 ppm.

게다가, 수소수로 레지스트 패턴의 반응 생성물을 세정하는 단계는, 초음파 진동을 인가하여 세정한다. 이때, 초음파 진동은 2.5MHz∼3.5MHz 주파수 범위에서 초음파 진동을 발생하여 수행한다. In addition, the step of cleaning the reaction product of the resist pattern with hydrogen water is performed by applying ultrasonic vibration. At this time, the ultrasonic vibration is performed by generating the ultrasonic vibration in the frequency range of 2.5MHz to 3.5MHz.

식각 대상층을 식각하여 포토 마스크의 패턴을 형성한다.(S40)The etching target layer is etched to form a pattern of the photo mask (S40).

이후, 에슁 공정을 진행하여 레지스트 패턴을 제거한다.(S50)Thereafter, an etching process is performed to remove the resist pattern (S50).

도 2a 내지 도 2e는 본 발명의 일 실시예에 따른 포토 마스크의 제조 공정을 순차적으로 나타낸 공정 순서도이다. 이들 도면을 참조하면, 본 발명의 일 실시예에 따른 포토 마스크의 제조 공정은 다음과 같이 진행된다.2A to 2E are process flowcharts sequentially illustrating a process of manufacturing a photomask according to an embodiment of the present invention. Referring to these drawings, a manufacturing process of a photo mask according to an embodiment of the present invention proceeds as follows.

도 2a에 도시된 바와 같이, 유리(glass), 석영(quart) 등의 투과 기판(10) 위에 식각 대상층으로서, 몰리브덴 등의 광 반투과막(12) 및 크롬 등의 차광막(14)을 순차적으로 증착한다.As shown in FIG. 2A, a light semitransmissive film 12 such as molybdenum and a light shielding film 14 such as chromium are sequentially formed as an etching target layer on the transparent substrate 10 such as glass and quartz. Deposit.

도 2b에 도시된 바와 같이, 식각 대상층인 크롬 등의 차광막(14) 상부에 레지스트를 도포하고 이를 노광 및 현상하여 레지스트 패턴(16)을 형성한다. 이때, 레지스트 패턴(16)이 형성된 투과 기판(10)에는 현상 공정에 의해 현상 반응 생성물 및 오염 물질(18)이 형성된다. As shown in FIG. 2B, a resist is coated on the light shielding film 14 such as chromium, which is an etching target layer, and exposed and developed to form a resist pattern 16. At this time, the developing reaction product and the contaminant 18 are formed in the transmissive substrate 10 on which the resist pattern 16 is formed by the developing process.

본 발명은 이러한 레지스트 현상 공정에 의해 발생된 반응 생성물 및 오염 물질(180)을 제거하기 위하여 다음과 같이 세정 공정을 진행한다.In order to remove the reaction product and the contaminants 180 generated by the resist development process, the present invention proceeds as follows.

도 2c에 도시된 바와 같이 레지스트 패턴(16)이 형성된 투과 기판(10)에 수소(H2)가 용해된 초순수를 공급하여 레지스트 패턴(16)의 현상 공정시 발생된 반응 생성물 및 오염 물질을 세정한다. 초순수에 용해되는 수소는 1.0ppm∼2.0ppm 농도를 갖는다.As shown in FIG. 2C, ultrapure water in which hydrogen (H 2 ) is dissolved is supplied to the transparent substrate 10 having the resist pattern 16 formed thereon, thereby cleaning reaction products and contaminants generated during the development process of the resist pattern 16. do. Hydrogen dissolved in ultrapure water has a concentration of 1.0 ppm to 2.0 ppm.

본 발명의 세정 공정은, 수소(H2)가 용해된 초순수인 수소수를 공급할 때 투과 기판(10)인 포토 마스크를 회전 척에 올려놓고 기설정된 속도로 회전시키면서 수소수를 기판 표면에 분사시킨다. 이에 따라 수소수에 의해 레지스트 패턴(16)과 차광막(14) 표면에 남아 있는 반응 생성물 및 오염 물질을 음극으로 하전되고 이때 발생되는 전기적 척력에 의해 반응 생성물 및 오염 물질이 표면으로부터 분리 및 제거된다.In the cleaning process of the present invention, when supplying hydrogen water which is ultrapure water in which hydrogen (H 2 ) is dissolved, hydrogen water is sprayed onto the substrate surface while placing the photomask, which is the transparent substrate 10, on the rotary chuck and rotating at a predetermined speed. . Accordingly, the reaction product and the contaminants remaining on the surface of the resist pattern 16 and the light shielding film 14 are charged to the cathode by hydrogen water, and the reaction product and the contaminants are separated and removed from the surface by the electric repulsive force generated at this time.

그러므로 본 발명의 세정 공정시 수소(H2)가 용해된 초순수인 수소수는 산 또는 염기도 포함되지 않으므로 레지스트 패턴(16)의 임계 치수에 변화를 주지않을 뿐만 아니라, 차광막(14)에 대한 손상도 가하지 않는다. Therefore, the ultra-pure hydrogen water in which hydrogen (H 2 ) is dissolved in the cleaning process of the present invention does not include an acid or a base, and thus does not change the critical dimension of the resist pattern 16, and also damages the light-shielding film 14. Do not add.

또한 본 발명의 세정 공정은, 수소수에 초음파 진동을 인가하여 세정한다. 이때, 초음파 진동은 레지스트 패턴의 진동 손상을 억제하기 위하여 2.5MHz∼3.5MHz 주파수 범위, 바람직하게는 3MHz에서 초음파 진동을 발생한다. 이러한 초음파 진동에 의해 수소수내에 다량의 캐비테이션(cavitation) 효과를 형성하여 이 를 통한 물리적 힘을 이용하여 레지스트 패턴(16)과 차광막(14) 표면에 남아 있는 반응 생성물 및 오염 물질을 쉽게 분리시킨다.Moreover, the washing | cleaning process of this invention applies an ultrasonic vibration to hydrogen water, and wash | cleans. At this time, the ultrasonic vibration generates ultrasonic vibration in the frequency range of 2.5MHz to 3.5MHz, preferably 3MHz to suppress the vibration damage of the resist pattern. By the ultrasonic vibration, a large amount of cavitation effect is formed in the hydrogen water, and the reaction product and the contaminants remaining on the surface of the resist pattern 16 and the light shielding film 14 are easily separated using the physical force therethrough.

도 2d 및 도 2e에 도시된 바와 같이, 세정 공정에 의해 현상 반응 생성물 및 오염 물질이 제거된 결과물의 레지스트 패턴(16)에 의해 드러난 차광막(14) 및 광 반투과막(12)을 건식 식각하여 포토 마스크의 패턴을 형성한다. 그리고 에슁 공정을 진행하여 레지스트 패턴을 제거한다.As shown in FIGS. 2D and 2E, the light shielding film 14 and the light semitransmissive film 12 exposed by the resist pattern 16 of the resultant product from which the development reaction product and contaminants have been removed by the cleaning process are dry-etched. The pattern of a photo mask is formed. Then, the etching process is performed to remove the resist pattern.

이후 사진 및 식각 공정을 진행하여 임의의 차광막(14) 식각 공정을 진행하여 임의의 영역에 해당하는 차광막 패턴을 제거할 수도 있다.Thereafter, the light blocking layer 14 may be etched by performing a photo and etching process to remove the light blocking layer pattern corresponding to an arbitrary region.

도 3은 본 발명에 따른 포토 마스크의 제조 방법에서 레지스트 현상시 발생되는 반응 생성물을 제거하기 위한 장치를 간략하게 나타낸 도면이다.FIG. 3 is a schematic view of an apparatus for removing a reaction product generated during resist development in the method of manufacturing a photomask according to the present invention.

도 3에 도시된 바와 같이, 본 발명에 따른 포토 마스크의 제조 공정 중 레지스트 패턴의 현상에 의한 반응 생성물 및 오염 물질 제거를 위한 세정 장치는, 식각 대상층(광 반투과막 혹은 차광막) 및 레지스트 패턴이 순차 형성된 투과 기판을 갖는 포토 마스크(1)를 지지하며 이를 기설정된 속도로 회전시키는 척(20)을 구비한다. 그리고 포토 마스크(1)의 상부 방향, 즉 레지스트 패턴이 있는 쪽으로 수소수를 공급하는 공급 수단(24)을 구비한다. 또 수소수에 초음파 진동을 인가하는 초음파 발생 수단(26)을 구비한다.As shown in FIG. 3, the cleaning apparatus for removing reaction products and contaminants due to the development of the resist pattern during the manufacturing process of the photomask according to the present invention includes an etching target layer (light semitransmissive film or light shielding film) and a resist pattern. It is provided with a chuck 20 for supporting the photomask 1 having a sequentially formed transmissive substrate and rotating it at a predetermined speed. And a supply means 24 for supplying hydrogen water to the upper direction of the photomask 1, that is, to the resist pattern. Moreover, the ultrasonic wave generation means 26 which applies an ultrasonic vibration to hydrogen water is provided.

이때, 수소수는 수소가 용해된 초순수를 사용하며 수소는 1.0ppm∼2.0ppm 농도를 갖는다.At this time, the hydrogen water uses ultrapure water in which hydrogen is dissolved, and hydrogen has a concentration of 1.0 ppm to 2.0 ppm.

척(20)은, 100rpm∼300rpm 속도로 회전되고, 공급 수단(24)은, 20°∼40° 각도 범위에서 수소수를 분사하는 노즐을 사용한다. 이때, 공급 수단(24)은 노즐을 이동시켜 수소수를 분사할 수도 있다.The chuck 20 is rotated at a speed of 100 rpm to 300 rpm, and the supply means 24 uses a nozzle that injects hydrogen water in an angle range of 20 ° to 40 °. At this time, the supply means 24 may move a nozzle and inject hydrogen water.

초음파 발생 수단(26)은, 2.5MHz∼3.5MHz 주파수 범위에서 초음파 진동을 발생한다.The ultrasonic wave generating means 26 generates ultrasonic vibrations in the frequency range of 2.5 MHz to 3.5 MHz.

그러므로, 본 발명은 포토 마스크의 제조 공정시 레지스트 패턴을 현상한 후에, 포토 마스크 기판을 기설정된 속도로 회전시키면서 수소(H2)가 용해된 초순수인 수소수를 공급하여 포토 마스크의 레지스트 패턴과 차광막 표면에 남아 있는 반응 생성물 및 오염 물질을 분리 및 제거한다. 이때, 수소수에 물리적인 초음파 진동을 인가하여 반응 생성물 및 오염 물질을 보다 쉽게 분리시킨다.Therefore, according to the present invention, after the resist pattern is developed during the manufacturing process of the photomask, the ultrafine water in which hydrogen (H 2 ) is dissolved is supplied while rotating the photomask substrate at a predetermined speed so that the resist pattern and the light shielding film of the photomask are provided. Reaction products and contaminants remaining on the surface are separated and removed. At this time, physical ultrasonic vibration is applied to the hydrogen water to more easily separate the reaction product and contaminants.

따라서 본 발명은 포토 마스크의 제조 공정시 레지스트 패턴을 현상한 후에 수소(H2)가 용해된 초순수인 수소수를 이용하여 반응 생성물 및 오염 물질을 제거하므로 수소수에 의해 레지스트 패턴의 임계 치수에 변화를 주지않으면서 차광막에 대한 손상도 가하지 않으면 레지스트 패턴에 발생된 반응 생성물 및 오염 물질을 완전히 제거할 수 있다. Therefore, the present invention removes the reaction product and contaminants using hydrogen water, which is ultrapure water in which hydrogen (H 2 ) is dissolved after developing the resist pattern in the manufacturing process of the photomask, so that the critical dimension of the resist pattern is changed by the hydrogen water. Without damaging the light shielding film, the reaction product and contaminants generated in the resist pattern can be completely removed.

한편, 본 발명은 상술한 실시예에 국한되는 것이 아니라 후술되는 청구범위에 기재된 본 발명의 기술적 사상과 범주내에서 당업자에 의해 여러 가지 변형이 가능하다.On the other hand, the present invention is not limited to the above-described embodiment, various modifications are possible by those skilled in the art within the spirit and scope of the present invention described in the claims to be described later.

상기한 바와 같이, 본 발명은 포토 마스크의 제조 공정시 레지스트 패턴을 현상한 후에 수소(H2)가 용해된 초순수인 수소수를 이용하여 반응 생성물 및 오염 물질을 제거하므로 수소수에 의해 레지스트 패턴의 임계 치수에 변화를 주지않으면서 차광막에 대한 손상도 가하지 않으면 레지스트 패턴에 발생된 반응 생성물 및 오염 물질을 완전히 제거할 수 있다.As described above, the present invention removes the reaction product and contaminants using hydrogen water, which is ultrapure water in which hydrogen (H 2 ) is dissolved, after developing the resist pattern in the manufacturing process of the photomask. Without altering the critical dimension and without damaging the light shielding film, reaction products and contaminants generated in the resist pattern can be completely removed.

따라서 본 발명은 포토 마스크의 제조 공정시 레지스트 현상 공정에 의해 발생되는 포토 마스크 패턴 결함을 미연에 방지할 수 있어 제조 수율을 향상시킬 수 있다. Therefore, the present invention can prevent the photo mask pattern defects generated by the resist development process in the manufacturing process of the photo mask in advance, thereby improving the production yield.

Claims (12)

포토 마스크의 패턴을 제조하는 방법에 있어서,In the method of manufacturing the pattern of the photo mask, 투과 기판에 식각 대상층을 형성하는 단계;Forming an etching target layer on the transparent substrate; 상기 식각 대상층 상부에 레지스트를 도포하고 이를 노광 및 현상하여 레지스트 패턴을 형성하는 단계;Applying a resist on the etch target layer and exposing and developing the resist to form a resist pattern; 상기 결과물에 수소수를 공급하여 세정하는 단계;Supplying hydrogen water to the resultant and washing it; 상기 식각 대상층을 식각하여 패턴을 형성하는 단계; 및,Etching the etching target layer to form a pattern; And, 상기 레지스트 패턴을 제거하는 단계를 포함하여 이루어진 것을 특징으로 하는 포토 마스크의 패턴 제조 방법.And removing the resist pattern. 제 1항에 있어서, The method of claim 1, 상기 수소수는 수소가 용해된 초순수인 것을 특징으로 하는 포토 마스크의 패턴 제조 방법.The hydrogen water is a pattern manufacturing method of a photo mask, characterized in that ultra-pure water in which hydrogen is dissolved. 제 2항에 있어서,The method of claim 2, 상기 수소는 1.0ppm∼2.0ppm 농도를 갖는 것을 특징으로 하는 포토 마스크의 패턴 제조 방법.The hydrogen has a concentration of 1.0ppm to 2.0ppm pattern manufacturing method of a photo mask. 제 1항에 있어서, The method of claim 1, 상기 세정하는 단계는, 초음파 진동을 인가하여 세정하는 것을 특징으로 하는 포토 마스크의 패턴 제조 방법.The cleaning step is a pattern manufacturing method of a photo mask, characterized in that for cleaning by applying ultrasonic vibration. 제 4항에 있어서, The method of claim 4, wherein 상기 초음파 진동은 2.5MHz∼3.5MHz 주파수 범위에서 초음파 진동을 발생하여 수행하는 것을 특징으로 하는 포토 마스크의 패턴 제조 방법.The ultrasonic vibration is a pattern manufacturing method of a photo mask, characterized in that performed by generating ultrasonic vibration in the frequency range of 2.5MHz to 3.5MHz. 포토 마스크의 패턴을 제조하는 장치에 있어서,In the apparatus for manufacturing a pattern of the photo mask, 식각 대상층 및 레지스트 패턴이 순차 형성된 투과 기판을 회전시키는 척; 및A chuck to rotate the transmissive substrate on which the etching target layer and the resist pattern are sequentially formed; And 상기 레지스트 패턴에 수소수를 공급하는 공급 수단을 구비하는 것을 특징으로 하는 포토 마스크의 레지스트 반응 생성물 제거 장치.And a supply means for supplying hydrogen water to said resist pattern. 제 6항에 있어서, The method of claim 6, 상기 수소수는 수소가 용해된 초순수인 것을 특징으로 하는 포토 마스크의 레지스트 반응 생성물 제거 장치.And said hydrogen water is ultrapure water in which hydrogen is dissolved. 제 7항에 있어서,The method of claim 7, wherein 상기 수소는 1.0ppm∼2.0ppm 농도를 갖는 것을 특징으로 하는 포토 마스크의 레지스트 반응 생성물 제거 장치.Wherein said hydrogen has a concentration of 1.0 ppm to 2.0 ppm. 제 6항에 있어서, The method of claim 6, 상기 공급 수단은, 20°∼40° 각도 범위에서 상기 수소수를 분사하는 노즐인 것을 특징으로 하는 포토 마스크의 레지스트 반응 생성물 제거 장치.And the supply means is a nozzle for injecting the hydrogen water in an angle range of 20 ° to 40 °. 제 6항에 있어서, The method of claim 6, 상기 척은, 100rpm∼300rpm 속도로 회전되는 것을 특징으로 하는 포토 마스크의 레지스트 반응 생성물 제거 장치.The chuck is rotated at a speed of 100rpm to 300rpm, the resist reaction product removal device of the photo mask. 제 6항에 있어서, The method of claim 6, 상기 장치는, 상기 수소수에 초음파 진동을 인가하는 초음파 발생 수단을 더 구비하는 것을 특징으로 하는 포토 마스크의 레지스트 반응 생성물 제거 장치.The apparatus further includes ultrasonic generating means for applying ultrasonic vibration to the hydrogen water. 제 11항에 있어서, The method of claim 11, 상기 초음파 발생 수단은, 2.5MHz∼3.5MHz 주파수 범위에서 초음파 진동을 발생하는 것을 특징으로 하는 포토 마스크의 레지스트 반응 생성물 제거 장치.And said ultrasonic wave generating means generates ultrasonic vibrations in the frequency range of 2.5 MHz to 3.5 MHz.
KR1020060059948A 2006-06-29 2006-06-29 Method for manufacturing photo mask and system for removing resist particle KR20080001479A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101129023B1 (en) * 2008-02-26 2012-03-27 주식회사 하이닉스반도체 Method for cleaning the reflection type photomask
WO2012165915A2 (en) 2011-06-02 2012-12-06 Hanmi Science Co., Ltd. Composition for treating diabetes comprising long-acting insulin conjugate and long-acting insulinotropic peptide conjugate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101129023B1 (en) * 2008-02-26 2012-03-27 주식회사 하이닉스반도체 Method for cleaning the reflection type photomask
WO2012165915A2 (en) 2011-06-02 2012-12-06 Hanmi Science Co., Ltd. Composition for treating diabetes comprising long-acting insulin conjugate and long-acting insulinotropic peptide conjugate

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