KR20100128229A - Electrode for electrostatic attraction, manufacturing method therefor and substrate processing apparatus - Google Patents

Abstract

PURPOSE: An electrostatic absorbing electrode, a method for manufacturing the same, and a substrate processing apparatus are provided to simply obtain both an insulating layer and an electrode layer by forming a first electrode layer and a second electrode layer through a spraying method. CONSTITUTION: A substrate supporting face absorbs a substrate(G) using electrostatic force. An insulating coating(41) is formed on a base through a spraying method. The positive voltage is applied to a first electrode layer(42a). A negative voltage is applied to a second electrode layer(42b). Both the first electrode layer and the second electrode layer are formed on the insulating coating.

Description

Electrostatic adsorption electrode, its manufacturing method, and substrate processing apparatus {ELECTRODE FOR ELECTROSTATIC ATTRACTION, MANUFACTURING METHOD THEREFOR AND SUBSTRATE PROCESSING APPARATUS}

BACKGROUND OF THE INVENTION Field of the Invention [0001] The present invention provides an electrostatic charge used to adsorb and hold a substrate in a processing chamber in which dry etching or the like is performed on a substrate such as a glass substrate for manufacturing a flat panel display (FPD) such as a liquid crystal display (LCD). An adsorption electrode, its manufacturing method, and a substrate processing apparatus using the electrostatic adsorption electrode.

In the manufacturing process of FPD, various processes, such as dry etching or sputtering and CVD (Chemical Vapor Deposition), are performed with respect to the rectangular glass substrate which is a to-be-processed object. In the processing apparatus which performs these processes, the board | substrate mounting base which has an electrostatic adsorption electrode is provided in a chamber, and a glass substrate is adsorbed and fixed by electrostatic adsorption electrode, for example using a Coulomb force or Johnson Lavecque force, and it is predetermined as it is. Processing is performed.

Conventionally, as an electrostatic adsorption electrode, a glass substrate is formed by coating an insulating film made of ceramic such as Al ₂ O ₃ with a thermal spray on a rectangular metal electrode having a size corresponding to the substrate, and applying a DC voltage to the metal electrode. It is known to adsorb | suck to (for example, patent document 1).

Japanese Patent Publication No. 2005-136350

By the way, in recent years, the glass substrate for FPD has become large in size, and higher adsorption force is calculated | required with respect to an electrostatic adsorption electrode. In order to obtain higher adsorption force in such an electrostatic adsorption electrode, it is necessary to increase the DC voltage applied to the metal electrode. However, when the DC voltage applied to the metal electrode is increased, the coating must be thick in order to maintain the withstand voltage performance of the insulating film, and the adsorption force is lowered by making the insulating film thick. In addition, when the insulating film is thickened, film cracking due to heat or stress is likely to occur. In addition, in the conventional electrostatic chuck electrode, since the charge remains on the glass substrate surface after the voltage is turned off, electrostatic removal is required, and the processing time (tact time) of the substrate is extended.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and it is possible to provide an electrostatic adsorption electrode and a substrate processing apparatus using the same, which can secure a necessary adsorption force by forming a thin insulating film without causing problems of withstand voltage performance. The purpose.

MEANS TO SOLVE THE PROBLEM In order to solve the said subject, in the 1st viewpoint of this invention, the electrostatic adsorption electrode provided with the board | substrate holding surface which adsorbs and hold | maintains a board | substrate by electrostatic power in a substrate processing apparatus, Comprising: An insulation film formed on a base material and formed by thermal spraying; And a first electrode layer to which a positive voltage is applied and a second electrode layer to which a negative voltage is formed in the insulating film.

It is preferable that the said 1st electrode layer and the 2nd electrode layer comprise the comb-shaped electrode in which these opposing surfaces form a comb form from the said 1st viewpoint.

Preferably, the first electrode layer and the second electrode layer are formed by thermal spraying. Moreover, the said adsorption viewing surface can be set as the structure which has an uneven | corrugated shape.

Moreover, the said insulating film is a 1st film containing the board | substrate holding surface above the said 1st electrode layer and the said 2nd electrode layer, and the 2nd film in which the said 1st electrode layer and the said 2nd electrode layer below the 1st film were formed. The dielectric constant of the first film can be higher than that of the second film. In this case, the first film can be formed by diffusing a predetermined component from the substrate holding surface on the first electrode layer and the second electrode layer. Accordingly, a portion corresponding to the first electrode layer and the second electrode layer may be thick, and a portion corresponding to the portion between the first electrode layer and the second electrode layer may be thin. The first coating film may be configured such that a recess is formed in a portion corresponding to the first electrode layer and the second electrode layer on the substrate holding surface.

In the first aspect, the insulating film may have a lower layer film and an upper layer film, and the first electrode layer and the second electrode layer may be formed between the lower layer film and the upper layer film.

In this case, it is preferable that the interface between the lower layer and the upper layer forms a concave-convex shape, and the interface between the lower layer and the upper layer does not exist between the adjacent first electrode layer and the second electrode layer. For this reason, generation | occurrence | production of surface discharge between an upper coat and a lower coat can be prevented effectively.

Specifically, it has a 1st recessed part and a 1st convex part in the upper surface of the said lower layer film, and was formed in correspondence with the 1st concave part and the 2nd recessed part formed corresponding to the said 1st convex part in the lower surface of the said upper layer film. It has a 2nd convex part, and said 1st and 2nd electrode layer can be set as the structure formed between the said 1st convex part and the said 2nd concave part. In this case, the upper layer film may have a higher withstand voltage than the lower layer film. The second concave portion has a first concave portion and a first convex portion on an upper surface of the lower layer film, and a second concave portion formed corresponding to the first convex portion on a lower surface of the upper layer film and a second concave portion formed in correspondence with the first concave portion. It has a convex part, and the said 1st and 2nd electrode layer can be set as the structure formed between the said 1st concave part and the said 2nd convex part.

In a second aspect of the present invention, there is provided a method for manufacturing an electrostatic adsorption electrode for producing an electrostatic adsorption electrode having an insulating film, a first electrode layer to which a positive voltage is applied, and a second electrode layer to which a negative voltage is applied, which is formed in the insulating film. Forming a lower layer film of the insulating film on the substrate by thermal spraying; forming the first electrode layer and the second electrode layer by thermal spraying on the lower layer film; and forming the first electrode layer and the second electrode layer. It provides the manufacturing method of the electrostatic adsorption electrode characterized by having the process of forming the upper film of the said insulating film by the thermal spraying on the whole surface after formation of the above.

After forming the said 1st electrode layer and the said 2nd electrode layer from a said 2nd viewpoint, the process of forming a recessed part in the part in which the said 1st electrode layer and the said 2nd electrode layer of the said lower layer film are not formed by a blast process is performed. Furthermore, it can be made to form the said upper film after that.

In the step of forming the first electrode layer and the second electrode layer, a conductive layer is formed by thermal spraying on the lower layer film, and then the first electrode layer and the second electrode layer of the conductive layer are formed by blasting. It is performed by removing a part other than this, A recessed part can be formed in the part in which the said 1st electrode layer and the said 2nd electrode layer of the said lower layer film are not formed, and the said upper layer film can be formed after that.

Further, the method may further include forming a recess in the lower layer film, and forming the first electrode and the second electrode thinner than the depth of the recess in the recess, and then forming the upper layer.

In a third aspect of the present invention, a process is formed in the processing container for accommodating a substrate, the electrostatic adsorption electrode of the first viewpoint, and the substrate held by the electrostatic adsorption electrode, for performing a predetermined process. Provided is a substrate processing apparatus comprising a mechanism.

In the second aspect, the processing mechanism may be configured to perform plasma processing on the substrate.

According to the present invention, the insulating layer of the electrostatic adsorption electrode is constituted by an insulating coating by thermal spraying, and a first electrode layer to which a positive voltage is applied and a second electrode layer to which a negative voltage is applied are formed in the insulating film to form a bipolar electrostatic adsorption. Since the electrode is constituted, the insulation breakdown performance is a problem between the first electrode layer and the second electrode layer, and the distance between the first electrode layer and the second electrode layer is reduced. Do not. For this reason, an insulating film can be formed thin by spraying, and high adsorption force can be obtained without causing the problem of breakdown voltage performance. In addition, there is no need to charge an electric charge on the substrate due to the adsorption by the bipolar circuit, and eliminating the static electricity is unnecessary because the circuit is eliminated by turning off the voltage.

In addition, by forming the first electrode layer and the second electrode layer by thermal spraying, both the insulating layer and the electrode layer are formed by thermal spraying, and thus it is possible to manufacture simply and easily. In addition, even if the electrode layer has a complicated shape such as a comb shape, it can be easily formed using a mask.

Furthermore, by making the insulating film into a two-layer structure of the first film between the first electrode layer, the second electrode layer, and the substrate holding surface, and the second film including between the electrode layers, the first film contributes to the increase in adsorption force. The second film contributes to the improvement of the withstand voltage performance, and the electrostatic adsorption electrode having higher adsorption force and insulation breakdown voltage can be realized.

1 is a cross-sectional view showing a plasma processing apparatus that is an example of a substrate processing apparatus having an electrostatic chuck as an electrostatic adsorption electrode according to the first embodiment of the present invention.
2 is a cross-sectional view showing a mounting table provided with an electrostatic chuck as an electrostatic adsorption electrode according to the first embodiment of the present invention.
3 is a schematic diagram showing an electrode pattern of an electrostatic chuck as an electrostatic adsorption electrode according to the first embodiment of the present invention.
4A and 4B are schematic diagrams for explaining the principle of adsorption of the electrostatic adsorption electrode of the present invention.
FIG. 5 is a view showing a state in which a plurality of convex portions are formed on the substrate holding surface in the electrostatic chuck as the electrostatic adsorption electrode according to the first embodiment of the present invention.
FIG. 6 is a view showing a state in which a plurality of recesses are formed in the substrate holding surface in the electrostatic chuck as the electrostatic adsorption electrode according to the first embodiment of the present invention.
7A to 7G are cross-sectional views showing an example of a procedure for manufacturing an electrostatic chuck as the electrostatic adsorption electrode according to the first embodiment of the present invention.
8 is a cross-sectional view for describing creepage discharges generated by the electrostatic chuck manufactured in the order of FIGS. 7A to 7G.
9A and 9B are sectional views showing a configuration capable of effectively preventing creepage discharge in the electrostatic chuck as the electrostatic adsorption electrode according to the first embodiment of the present invention.
10A to 10H are cross-sectional views illustrating an example of a procedure of manufacturing the electrostatic chuck of FIG. 9A.
11A to 11H are cross-sectional views illustrating another example of the procedure of manufacturing the electrostatic chuck of FIG. 9A.
12A to 12H are cross-sectional views illustrating an example of a procedure of manufacturing the electrostatic chuck of FIG. 9B.
13 is a cross-sectional view showing an electrostatic chuck as an electrostatic adsorption electrode according to the second embodiment of the present invention.
14 is a cross-sectional view showing an electrostatic chuck as an electrostatic adsorption electrode according to a modification of the second embodiment of the present invention.
15 is a cross-sectional view showing an electrostatic chuck as an electrostatic adsorption electrode according to another modification of the second embodiment of the present invention.

EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described with reference to an accompanying drawing. 1 is a cross-sectional view showing a plasma processing apparatus that is an example of a substrate processing apparatus having an electrostatic chuck as an electrostatic adsorption electrode according to a first embodiment of the present invention, FIG. 2 is a cross-sectional view showing a mounting table provided with an electrostatic chuck; 3 is a schematic diagram showing an electrode pattern of an electrostatic chuck.

This plasma processing apparatus 1 is configured as a capacitively coupled parallel plate plasma etching apparatus. As FPD here, a liquid crystal display (LCD), an electro luminescence (EL) display, a plasma display panel (PDP), etc. are illustrated.

This plasma processing apparatus 1 has the chamber 2 shape | molded in the shape of the square cylinder which consists of aluminum whose surface was anodized (anodic oxidation treatment), for example. In the bottom part of this processing chamber 2, the board | substrate mounting base 3 for mounting the glass substrate G which is an insulating substrate as a to-be-processed substrate is provided.

The substrate placing table 3 is supported at the bottom of the processing chamber 2 via the insulating member 4, and is formed of a convex base material 5 made of metal such as aluminum, and the convexity of the base material 5. Frame-shaped shield ring 7 made of an insulating ceramic, for example, alumina, provided around the electrostatic chuck 6 provided on the portion 5a, and the convex portion 5a of the electrostatic chuck 6 and the substrate 5. Has) Moreover, inside the base material 5, the temperature control mechanism (not shown) for temperature-controlling the glass substrate G is provided. In addition, a ring-shaped insulating ring 8 made of an insulating ceramic, for example, alumina, is provided to support the shield ring 7 around the base 5.

The electrostatic chuck 6 includes a ceramic thermal sprayed coating 41 formed by thermal spraying of an insulating ceramic such as alumina, a first metal electrode layer 42a serving as an anode formed therein, and a second metal electrode layer 42b serving as a cathode. It is comprised as a bipolar electrostatic chuck which has a structure, and the upper surface of the ceramic thermal spray coating 41 is used as a board | substrate holding surface. In addition, thermal spraying at the time of forming the ceramic thermal sprayed coating 41 is preferable.

The first metal electrode layer 42a serving as an anode and the second metal electrode layer 42b serving as a cathode are made of a metal such as tungsten or molybdenum. For example, as shown in FIG. The comb-shaped electrode which comprises is comprised. The first DC power supply 34a is connected to the first metal electrode layer 42a via the feed line 33a, and the negative metal voltage is applied to the second metal electrode layer 42b via the feed line 33b. The second DC power supply 34b is connected, and these DC power supplies are grounded to a common ground. The glass substrate G is adsorbed by applying a positive voltage (+ V) to the first metal electrode layer 42a and applying a negative voltage (-V) to the second metal electrode layer 42b from these DC power sources. . In addition, a switch (not shown) is provided in the feed line 33a and the feed line 33b.

It is preferable that these 1st metal electrode layer 42a and the 2nd metal electrode layer 42b are formed by the thermal spraying using a mask. Also in this case, plasma spraying is preferable.

Lifting pins 10 for loading and unloading the glass substrate G thereon to pass through the bottom wall of the chamber 2, the insulating member 4, and the mounting table 3 are provided. It is inserted to move up and down. This lifting pin 10 is raised to the conveyance position above the mounting table 3 when conveying the glass substrate G, and is in the state recessed in the mounting table 3 otherwise.

A feeder line 12 for supplying high frequency power is connected to the base 5 of the mounting table 3, and a matching device 13 and a high frequency power source 14 are connected to the feeder line 12. The high frequency power of 13.56 MHz, for example, is supplied from the high frequency power supply 14 to the base material 5 of the mounting table 3. Thus, the mounting table 3 functions as a lower electrode.

Above the mounting table 3, a shower head 20 is provided which faces the mounting table 3 in parallel and functions as an upper electrode. The shower head 20 is supported at an upper portion of the processing chamber 2, has an internal space 21 therein, and discharges 22 a plurality of discharge holes 22 for discharging the processing gas to a surface facing the mounting table 3. ) Is formed. This shower head 20 is grounded and comprises a pair of parallel flat electrodes with the mounting base 3 which functions as a lower electrode.

A gas inlet 24 is provided on an upper surface of the shower head 20, and a process gas supply pipe 25 is connected to the gas inlet 24, and the process gas supply pipe 25 is a process gas supply source 28. ) In addition, the process gas supply pipe 25 is provided with an on-off valve 26 and a mass flow controller 27. The processing gas source 28 is supplied with a processing gas for plasma processing, for example, plasma etching. As the processing gas, a gas usually used in this field, such as a halogen-based gas, O ₂ gas, or Ar gas, can be used.

An exhaust pipe 29 is formed at the bottom of the processing chamber 2, and an exhaust device 30 is connected to the exhaust pipe 29. The exhaust device 30 is provided with a vacuum pump such as a turbo molecular pump, and is thereby configured to be able to evacuate the inside of the processing chamber 2 to a predetermined reduced pressure atmosphere. Moreover, the board | substrate carrying in / out port 31 is provided in the side wall of the processing chamber 2, and this board | substrate carrying in / out 31 is openable by the gate valve 32, and can be opened and closed. And glass substrate G is carried in and out by a conveying apparatus (not shown) in the state which opened this gate valve 32. As shown in FIG.

This plasma processing apparatus 1 has a controller 50 including a microprocessor (computer) for controlling each component, and each component is connected to and controlled by the controller 50.

Next, the processing operation | movement in the plasma etching apparatus 1 comprised in this way is demonstrated.

First, the gate valve 32 is opened, and the glass substrate G is carried into the chamber 2 via the board | substrate loading / exit 31 by the conveyance arm (not shown), and the electrostatic chuck 6 of the mounting base 3 is carried out. ). In this case, the lifting pin 10 protrudes upward to be positioned at the support position, and the glass substrate G on the transfer arm is transferred onto the lifting pin 10. Thereafter, the lifting pins 10 are lowered to mount the glass substrate G on the electrostatic chuck 6 of the mounting table 3.

Thereafter, the gate valve 32 is closed, and the evacuation device 30 evacuates the chamber 2 to a predetermined degree of vacuum. Then, a positive voltage V + is applied from the first DC power supply 34a to the first metal electrode layer 42a serving as an anode, and from the second DC power supply 34b to the second metal electrode layer 42b serving as the cathode. The glass substrate G is electrostatically adsorbed by applying a negative voltage V-.

Thereafter, the valve 26 is opened, and the processing gas is supplied from the processing gas supply source 28 into the chamber 2 through the processing gas supply pipe 25 and the shower head 20 at a predetermined flow rate, and the chamber 2 is supplied. The inside is controlled to a predetermined pressure. In this state, the high frequency power for plasma generation is supplied from the high frequency power supply 14 via the matcher 13 to the base material 5 of the mounting table 3, and the mounting table 3 as the lower electrode and the shower as the upper electrode are provided. A high frequency electric field is generated between the heads 20 to generate plasma of the processing gas, and plasma etching is performed on the glass substrate G by this plasma.

In this embodiment, since the electrostatic chuck 6 is a bipolar electrostatic chuck, the glass substrate G is adsorbed by the bipolar circuit 51 along the electric line of force between the bipolar electrodes as shown in FIGS. 4A and 4B. That is, the bipolar circuit 51 is comprised from the 1st metal electrode layer 42a, the ceramic thermal sprayed coating 41, the glass substrate G, the ceramic thermal sprayed coating 41, and the 2nd metal electrode layer 42b.

As shown in FIG. 4A, the capacitor C1 having the ceramic thermal sprayed coating 41 on the first metal electrode 42a as the dielectric layer, the capacitor C2 having the glass substrate G as the dielectric layer, and the second metal electrode ( Consider three capacitors of the capacitor C3 having the ceramic thermal sprayed coating 41 on 42b) as a dielectric layer. In addition, assuming that the capacitors C4 and C5 are present between the ceramic thermal sprayed coating 41 and the glass substrate G, as shown in FIG. 4B, the bipolar circuit 51 connects these five capacitors in series. It can be considered as one synthesized capacitor (C).

The attraction force to the glass substrate G increases and decreases in accordance with the attraction force acting between the electrodes at both ends of the compound capacitor C, and when the voltage applied to the electrode of the compound capacitor C is constant, the attraction force is the compound capacitor C. ), The larger the capacity.

Assuming that the capacitors C2, C4 and C5 are constant, the capacity of the synthesized capacitor increases as the capacity of the capacitors C1 and C3 increases, so that the adsorption force of the glass substrate G increases.

In this embodiment, the ceramic thermal sprayed coating 41 on the first metal electrode layer 42a and the second metal electrode layer 42b is thinly formed to increase the capacitances of the capacitors C1 and C3. The thickness of the ceramic thermal sprayed coating 41 formed by thermal spraying can be easily controlled. For this reason, a high adsorption force can be acquired with respect to the same voltage, and the crack by the heat or stress of the ceramic sprayed coating 41 can be prevented.

In addition, electrostatic removal is unnecessary because of the adsorption by the bipolar circuit. That is, the conventional electrostatic chuck needs to charge an electric charge on the glass substrate when absorbing the glass substrate, which is an insulator, so that static electricity is removed when the glass substrate is peeled off. In the case where the substrate is adsorbed, electrostatic removal is unnecessary because charging of the charge onto the glass substrate is unnecessary. In addition, although gas or plasma is required to charge the charge onto the glass substrate, in the present embodiment, since no charge is charged onto the substrate, no gas or plasma is required at the time of adsorption of the glass substrate. Desorption can be performed easily. Moreover, since an electric charge on a glass substrate is unnecessary, it can use also in air | atmosphere.

In addition, since the insulating layer is composed of a ceramic thermal spray coating 41 having high corrosion resistance, the insulating layer can be formed thin, and furthermore, it can be used in a plasma atmosphere.

In addition, since the insulating layer is constituted by the ceramic thermal spray coating 41, the convex surface of the glass substrate G has a plurality of convex portions 51 as shown in FIG. 5 or a large number as shown in FIG. Even when the irregularities of various designs are formed on the substrate holding surface such as the structure having the concave portion 52, it can be easily manufactured using a mask or the like. Of course, it can also manufacture by machining.

In addition, when the first metal electrode layer 42a and the second metal electrode layer 42b are formed by thermal spraying, both the insulating layer and the electrode layer may be formed by thermal spraying, and thus the production may be simple and easy. In addition, even if the first metal electrode layer 42a and the second metal electrode layer 42b have a complicated shape such as a comb shape, they can be easily formed using a mask.

In addition, by forming the first metal electrode layer 42a and the second metal electrode layer 42b in a comb shape, uniform adsorption force can be obtained. The shape of the first metal electrode layer 42a and the second metal electrode layer 42b is not limited to a comb shape, but may be other shapes.

Next, an example of the procedure of manufacturing the above-mentioned electrostatic chuck 6 is demonstrated with reference to FIGS. 7A-7G.

First, the lower layer film 41a of the ceramic thermal sprayed coating 41 is formed on the base material 5 by thermal spraying, and sealing is performed by resin impregnation as needed (FIG. 7A). Next, the lower coat 41a formed by thermal spraying is polished (FIG. 7B). By this polishing process, the lower layer film 41a is made into a predetermined thickness.

After polishing, a mask 45 is attached to the polishing surface of the lower layer film 41a to perform masking for electrode formation (FIG. 7C). Subsequently, the first metal electrode layer 42a and the second metal electrode layer 42b are formed by metal spraying using the mask 45 (FIG. 7D).

Thereafter, the mask 45 is removed (FIG. 7E), and then the upper layer 41b of the ceramic thermal sprayed coating 41 is formed on the entire surface by thermal spraying, and sealing is performed by resin impregnation as necessary (FIG. 7f). Finally, the upper layer film 41b is polished to a predetermined thickness (Fig. 7G).

Although the above is a general procedure, when manufacturing the bipolar electrostatic chuck 6 in this order, the first metal electrode layer 42a and the second metal electrode layer 42b are formed on the polished lower layer 41a. Therefore, if the distance between the electrodes is reduced in order to obtain a large adsorption force, as shown in Fig. 8, when the voltage is applied, creepage discharge is generated at the interface between the lower layer film 41a and the upper layer film 41b, and the withstand voltage is increased. It is easy to cause defects.

In order to prevent such creeping discharge, as shown in FIGS. 9A and 9B, the interface between the lower layer film 41a and the upper layer film 41b is uneven, and the adjacent first metal electrode layer 42a and the second metal are formed. It is effective that the interface between the lower layer film 41a and the upper layer film 41b does not exist between the electrode layers 42b.

In the example of FIG. 9A, the recessed part 46a and the convex part 47a are formed in the upper surface of the lower layer film 41a, and the convex part 46b corresponding to the said recessed part 46a is formed in the lower surface of the upper layer 41b. ) And a concave portion 47b corresponding to the convex portion 47a, and the first metal electrode layer between the convex portion 47a of the lower layer film 41a and the concave portion 47b of the upper layer film 41b. 42a and the second metal electrode layer 42b are formed. Accordingly, the convex portion 46b of the upper layer film 41b exists between the adjacent first metal electrode layer 42a and the second metal layer 42b, so that the lower layer layer 41a and the upper layer layer 41b are formed. Since no interface exists, creeping discharge can be made difficult.

In the example of FIG. 9B, the recessed part 48a and the convex part 49a are formed in the lower layer film 41a, and the convex part 48b and the said convex which correspond to the recessed part 48a are formed in the upper layer 41b. A concave portion 49b corresponding to the portion 49a is formed, and the first metal electrode layer 42a and the concave portion 48a of the lower layer film 41a and the convex portion 48b of the upper layer film 41b are formed. The second metal electrode layer 42b is formed. As a result, the convex portion 49a of the lower layer film 41a exists between the adjacent first metal electrode layer 42a and the second metal electrode layer 42b, so that the lower layer film 41a and the upper layer film 41b are formed. Since no interface exists, creeping discharge can be made difficult.

In addition, in the example of FIG. 9A, since the upper layer film 41b mainly affects insulation, the upper layer film 41b can be made into a film with higher withstand voltage performance than the lower layer film 41a. For example, the different impregnation of using the impregnating agent (A) which has high adhesive force and can flexibly respond to the difference in thermal expansion is used for the lower layer film 41a, and the impregnating agent (B) which has high withstand voltage performance is used for the upper layer 41b. The ceramic thermal spray coating structure using the agent is considered.

Next, the procedure for forming the structures of FIGS. 9A and 9B will be described.

When forming the structure of FIG. 9A, it can carry out in the order shown to FIGS. 10A-10H. First, the lower film 41a of the ceramic thermal sprayed coating 41 is formed on the base material 5 by thermal spraying, and sealing is performed by resin impregnation as needed (FIG. 10A). Next, the lower coat 41a formed by thermal spraying is polished (FIG. 10B). After polishing, a mask 45 is attached to the polishing surface of the lower layer film 41a to perform masking for electrode formation (FIG. 10C). It is the same as that of FIGS. 7A-7C so far.

Subsequently, the first metal electrode layer 42a and the second metal electrode layer 42b are formed by metal spraying using the mask 45 (FIG. 10D). At this time, it is formed thicker than in Fig. 7d.

The mask 45 is then removed (FIG. 10E), and the entire surface is then blasted to reduce the thickness of the lower layer film 41a and the first and second metal electrode layers 42a and 42b (FIG. 10F). . As a result, the blasted portion of the lower layer film 41a becomes the concave portion 46a, and the portion under the metal electrode layers 42a and 42b becomes the convex portion 47a.

Thereafter, the upper layer film 41b of the ceramic thermal sprayed coating 41 is formed on the entire surface by thermal spraying, and sealing is performed by resin impregnation as necessary (FIG. 10G). At this time, the convex part 46b is formed in the upper film 41b corresponding to the concave part 46a of the lower film 41a, and the concave part 47b is formed in correspondence with the convex part 47a. Finally, the upper film 41b is polished to a predetermined thickness (FIG. 10H).

In addition, the structure of FIG. 9A can also be formed by the procedure shown in FIG. First, the lower film 41a of the ceramic thermal sprayed coating 41 is formed on the base material 5 by thermal spraying, and sealing is performed by resin impregnation as needed (FIG. 11A). Subsequently, the undercoat 41a formed by thermal spraying is polished (FIG. 11B). Subsequently, metal layers (conductor layers) 42 for forming the metal electrode layers 42a and 42b are formed on the entire surface of the lower layer coating 41a after polishing (FIG. 11C). After polishing the metal layer 42, a mask 45 is attached to the polished surface to perform masking for electrode formation (FIG. 11D).

Next, the blasting process is performed using the mask 45, the metal layer 42 of the part without the mask 45 is removed, and the thickness of the part of the lower layer 41a below it is reduced (FIG. 11E). Thereby, the 1st metal electrode layer 42a and the 2nd metal electrode layer 42b are formed, and the blasted part of the lower layer film 41a becomes the recessed part 46a. The lower portion of the metal electrode layers 42a and 42b serves as the convex portion 47a.

Thereafter, the mask 45 is removed (FIG. 11F), and then the upper layer 41b of the ceramic thermal sprayed coating 41 is formed on the entire surface by thermal spraying, and sealing is performed by resin impregnation as necessary (FIG. 11g). At this time, the convex part 46b is formed in the upper film 41b corresponding to the concave part 46a of the lower film 41a, and the concave part 47b is formed in correspondence with the convex part 47a. Finally, the upper film 41b is polished to a predetermined thickness (Fig. 11H).

When forming the structure of FIG. 9B, it can carry out in the procedure shown in FIG. First, the lower film 41a of the ceramic thermal sprayed coating 41 is formed on the base material 5 by thermal spraying, and sealing is performed by resin impregnation as needed (FIG. 12A). Next, the lower coat 41a formed by thermal spraying is polished (FIG. 12B). After polishing, a mask 45 is attached to the polishing surface of the lower layer film 41a to perform blasting and masking for electrode formation (FIG. 12C).

Subsequently, a blasting process is performed using the mask 45 to form a recess 48a in the lower layer film 41a (FIG. 12D). At this time, the lower portion of the mask 45 of the lower layer film 41a becomes the unblasted convex portion 49a.

Subsequently, the first metal electrode layer 42a and the second metal electrode layer 42b are formed in the concave portion 48a by the thermal spraying using the mask 45 (FIG. 12E). At this time, the thickness of the first metal electrode layer 42a and the second metal electrode layer 42b is made thinner than the depth of the recess 48a.

Thereafter, the mask 45 is removed (FIG. 12F), and then the upper layer 41b of the ceramic thermal sprayed coating 41 is formed on the entire surface by thermal spraying, and sealing is performed by resin impregnation as necessary (FIG. 12g). At this time, the convex part 48b is formed in the upper film 41b corresponding to the concave part 48a of the lower layer film 41a, and the concave part 49b is formed in correspondence with the convex part 49a. Finally, the upper film 41b is polished to a predetermined thickness (Fig. 12H).

Next, a second embodiment of the present invention will be described.

As mentioned above, the adsorption force of the glass substrate G can be improved by making the ceramic sprayed coating 41 on the 1st metal electrode layer 42a and the 2nd metal electrode layer 42b thin.

On the other hand, even when the dielectric constant of the ceramic thermal sprayed coating 41 is raised, the ceramic thermal sprayed coating 41 on the capacitor C1 and the second metal electrode 42b having the ceramic thermal sprayed coating 41 on the first metal electrode 42a as the dielectric layer is used. The capacitance of the capacitor C3 with the dielectric layer can be increased.

Thus, in the present embodiment, the ceramic of the two-layer structure of the first film between the first metal electrode layer 42a and the second metal electrode layer 42b and the substrate holding surface, and the second insulating film including between the electrode layers. The sprayed coating was formed, and the dielectric constant of the first film was made higher than that of the insulating layer of the second film.

Hereinafter, a specific configuration will be described.

13 is a sectional view showing an electrostatic chuck according to the second embodiment of the present invention. The electrostatic chuck 60 of this embodiment has a ceramic thermal spray coating 141 formed by thermal spraying of an insulating ceramic. The ceramic thermal sprayed coating 141 includes a first film 142 formed between the substrate holding surface, the metal electrode layer 42a, and the metal electrode layer 42b, and formed below the first metal electrode layer 42a and the first metal electrode layer 42a. The second metal electrode layer 42b has a second film 143 formed therein. The dielectric constant epsilon 1 of the first film 142 is higher than the dielectric constant epsilon 2 of the second film 143.

As a result, the first film 142 contributes to an increase in the adsorption force, thereby realizing a bipolar electrostatic chuck having a higher adsorption force.

Next, a modification of the present embodiment will be described with reference to FIGS. 14 and 15.

14 is a cross-sectional view showing the first modification. In this example, the electrostatic chuck 60a forms a ceramic thermal sprayed coating having a dielectric constant? 2 by the thermal spraying, and a structure composed of the first metal electrode layer 42a and the second metal electrode layer 42b therein, and then each electrode layer. A predetermined component is diffused from the upper surface of the substrate to change the dielectric constant of the ceramic thermal sprayed coating directly on each electrode layer to ε1 larger than ε2. In FIG. 14, the portion where the dielectric constant is changed to [epsilon] 1 is shown as a wave-shaped first film 142a. Here, resin etc. are mentioned as a predetermined component to diffuse.

As a result, the first film 142a contributes to the increase in the adsorption force, and the first film 142a having a high dielectric constant becomes thick at the position of the electrode layer that contributes to the adsorption, thereby increasing the adsorption force.

15 is a sectional view showing a second modification. In this example, the electrostatic chuck 60b includes a first film 142b having a dielectric constant? 1 formed between the substrate holding surface, the metal electrode layer 42a and the metal electrode layer 42b, and a first metal electrode layer formed below the first film 142b. (42a) and the second metal electrode layer 42b have the ceramic thermal sprayed coating 141b by the second film 143b having the dielectric constant? 2 formed therein, and the first film 142b is provided at a portion corresponding between the electrode layers. A recess 144 is formed. The recessed portion 144 is a vacuum layer having a dielectric constant of ε0 (actually some gas is present), but ε0 is almost 1, so that ε1> ε2> ε0.

As a result, the first film 142b contributes to the increase in the adsorption force, so that the adsorption force can be further increased as in the example of FIG. 14.

As mentioned above, although the Example of this invention was described, this invention is not limited to the said Example, It can variously change. For example, in the above embodiment, the RIE type capacitively coupled parallel plate plasma etching apparatus that applies high frequency power to the lower electrode has been described by way of example. However, the present invention is not limited to the etching apparatus and may be used for other types of ashing, CVD film formation, and the like. It is applicable to a plasma processing apparatus. Moreover, it is not limited to a plasma processing apparatus but is applicable also to another substrate processing apparatus. Moreover, in the said Example, although shown about the case where this invention was applied to the plasma process of the glass substrate for FPD, it is not limited to this, It is applicable to various other board | substrates.

1: plasma processing device
2: processing chamber
3: wit
5: base material
6, 60, 60a, 60b: electrostatic chuck
7: shield ring
14: high frequency power
20: shower head
28: process gas supply source
34a: first DC power supply
34b: second DC power
41, 141, 141a, 141b: Ceramic Spray Coating
42a: first metal electrode layer
42b: second metal electrode layer
46a, 47b, 48a, 49b: recessed portion
46b, 47a, 48b, 49a: convex
51: convex
52: recess
142, 142a, 142b: first film
143, 143a, 143b: second film
G: glass substrate

Claims (18)

An electrostatic adsorption electrode provided with a substrate holding surface for holding and holding a substrate by electrostatic power,
An insulating film formed on the base material and formed by thermal spraying,
The first electrode layer to which the positive voltage is applied and the second electrode layer to which the negative voltage is formed in the insulating film
Electrostatic adsorption electrode comprising a. The method of claim 1,
The first electrode layer and the second electrode layer constitute a comb-shaped electrode in which opposing surfaces of the first electrode layer and the second electrode layer form a comb-shaped electrode. The method according to claim 1 or 2,
The first electrode layer and the second electrode layer is electrostatic adsorption electrode, characterized in that formed by thermal spraying. The method according to claim 1 or 2,
The substrate holding surface has an irregular shape. The method according to claim 1 or 2,
The insulating film includes a first film including a substrate holding surface above the first electrode layer and the second electrode layer, and a second film including the first electrode layer and the second electrode layer below the first film. And the dielectric constant of the first film is higher than that of the second film. The method of claim 5, wherein
The first coating film is formed by diffusing a predetermined component from the substrate holding surface on the first electrode layer and the second electrode layer. The method of claim 5, wherein
The said 1st film | membrane is the electrostatic adsorption electrode characterized by the recessed part formed in the part corresponding between the said 1st electrode layer and the said 2nd electrode layer of the said board | substrate holding surface. The method according to claim 1 or 2,
The insulating coating has a lower coating and an upper coating, and the first electrode layer and the second electrode layer are formed between the lower coating and the upper coating. The method of claim 8,
An interface between the lower layer and the upper layer has an uneven shape, and the interface between the lower layer and the upper layer does not exist between the adjacent first electrode layer and the second electrode layer. The method of claim 9,
A second concave portion having a first concave portion and a first convex portion on an upper surface of the lower layer coating, and a second concave portion formed corresponding to the first convex portion on a lower surface of the upper layer coating and a second convex portion formed corresponding to the first concave portion. And the first and second electrode layers are formed between the first convex portion and the second concave portion. The method of claim 10,
The upper layer has a higher withstand voltage than the lower layer, the electrostatic adsorption electrode. The method of claim 9,
A second concave portion having a first concave portion and a first convex portion on an upper surface of the lower layer coating, and a second concave portion formed corresponding to the first convex portion on a lower surface of the upper layer coating and a second convex portion formed corresponding to the first concave portion. And the first and second electrode layers are formed between the first concave portion and the second convex portion. A method of manufacturing an electrostatic adsorption electrode for producing an electrostatic adsorption electrode having an insulating film, a first electrode layer to which a positive voltage is applied, and a second electrode layer to which a negative voltage is applied, which is formed in the insulating film,
Forming a lower layer film of the insulating film on the substrate by thermal spraying,
Forming the first electrode layer and the second electrode layer by thermal spraying on the lower layer film;
Process of forming the upper film of the said insulating film by the thermal spraying on the whole surface after forming the said 1st electrode layer and the said 2nd electrode layer.
The manufacturing method of the electrostatic adsorption electrode characterized by having. The method of claim 13,
After forming the said 1st electrode layer and the said 2nd electrode layer, it has the process of forming a recessed part in the part in which the said 1st electrode layer and the said 2nd electrode layer of the said lower layer film are not formed by a blast process, and after that A method of manufacturing an electrostatic adsorption electrode, characterized by forming an upper layer film. The method of claim 13,
In the step of forming the first electrode layer and the second electrode layer, a conductive layer is formed by thermal spraying on the lower layer film, and then, other than the first electrode layer and the second electrode layer of the conductive layer by blasting. By removing the portion, wherein a recess is formed in a portion where the first electrode layer and the second electrode layer of the lower layer film are not formed, and then the upper layer film is formed. Manufacturing method. The method of claim 13,
Further comprising a step of forming a recess in the lower layer, wherein the first electrode and the second electrode are formed thinner than the depth of the recess, and the upper layer is then formed. Method of manufacturing the electrode. A processing container accommodating a substrate,
It is provided in the said processing container, The electrostatic adsorption electrode of Claim 1 or 2,
The processing mechanism which performs a predetermined process with respect to the board | substrate hold | maintained by the said electrostatic adsorption electrode
Substrate processing apparatus comprising a. The method of claim 17,
The said processing mechanism performs a plasma process with respect to a board | substrate, The substrate processing apparatus characterized by the above-mentioned.

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