KR20100120336A - Plasma processing apparatus having a diffusion pump - Google Patents

Plasma processing apparatus having a diffusion pump Download PDF

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Publication number
KR20100120336A
KR20100120336A KR1020090039103A KR20090039103A KR20100120336A KR 20100120336 A KR20100120336 A KR 20100120336A KR 1020090039103 A KR1020090039103 A KR 1020090039103A KR 20090039103 A KR20090039103 A KR 20090039103A KR 20100120336 A KR20100120336 A KR 20100120336A
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South Korea
Prior art keywords
pump
processing apparatus
plasma processing
inductively coupled
coupled plasma
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KR1020090039103A
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Korean (ko)
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이제원
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인제대학교 산학협력단
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Priority to KR1020090039103A priority Critical patent/KR20100120336A/en
Priority to PCT/KR2009/006181 priority patent/WO2010128740A1/en
Publication of KR20100120336A publication Critical patent/KR20100120336A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)

Abstract

The present invention relates to an inductively coupled plasma processing apparatus, and more particularly, to an inductively coupled plasma processing apparatus capable of performing a plasma treatment by smart control of a diffusion pump. The present invention, a vacuum chamber, a plasma generating unit, a gas supply unit, and an exhaust coupled type plasma processing apparatus comprising an exhaust unit, the exhaust unit, a diffusion pump; Auxiliary pump; A main exhaust line connected to the vacuum chamber and the diffusion pump, the main exhaust line having a throttle valve and serving as an exhaust passage; It is connected to the vacuum chamber, the diffusion pump, and the auxiliary pump, characterized in that it comprises a secondary exhaust line having a main valve and an auxiliary valve, and serves as an exhaust passage. Plasma processing apparatus of the present invention has a mechanical residual failure rate by employing a diffusion pump is significantly lower than that employing a turbomolecular pump, the maintenance cost is also significantly cheaper, and the high-quality high-density plasma treatment is possible.

Description

Diffusion Pump Inductively Coupled Plasma Treatment Equipment {PLASMA PROCESSING APPARATUS HAVING A DIFFUSION PUMP}

The present invention relates to an inductively coupled plasma processing apparatus, and more particularly, to an inductively coupled plasma processing apparatus capable of performing a plasma treatment by smart control of a diffusion pump.

Plasma processing apparatus can be used for various applications, but considering the chemical reaction of the gas in the plasma, it is mainly used in the plasma chemical vapor deposition (CVD) and dry etching (Dry Etching).

The plasma CVD method is a thin film formation method in which a thin film is deposited on a substrate by chemically reacting a raw material gas using plasma. The plasma CVD method comprises a semiconductor integrated circuit device, a MEMS device, various electronic devices, and various sensors. It is widely used as a technique for producing thin films of metal films, semiconductor films, insulating films, photoconductor films, diffusion barrier films, and adhesion layer films.

The dry etching method is a method of etching a thin film by chemical reaction using a predetermined source gas plasma, which is also widely used in the above-described fields such as semiconductor film processing.

In these plasma processing methods, inductively coupled plasmas have recently been attracting attention. This is because, by using an inductively coupled plasma, for example, high-speed etching is possible, and electrical damage of the etching thin film can be reduced. Thus, etching treatment that has not been realized until now can be performed, and processing efficiency is improved.

In the following, a conventional technique is described, for example, with respect to a plasma generating apparatus.

In order to generate a plasma in a chamber, it is common to use a plasma generating electrode, and high frequency electric power is typically applied to this plasma generating electrode.

The types of plasma generating electrodes can be classified into capacitively coupled plasmas, inductively coupled plasmas, and the like. It can be classified into an electrode system and an internal electrode system in which electrodes are disposed in the chamber. The most widely used among these types is a parallel plate plasma generator, which is a capacitive coupling method and an internal electrode method, which is called a capacitively coupled plasma (CCP) generator.

The capacitively coupled plasma generator utilizes the principle of charge storage of a capacitor and opposes two electrodes inside a chamber to apply high frequency power, low frequency power, direct current power, or power that is time modulated to one electrode. It is structured to be able to do it. The other electrode is grounded. Alternatively, the other electrode may be grounded through a combination of a capacitor, a coil (inductor), and a capacitor and a coil.

These parallel plate electrode structures accelerate charged particles such as electrons and ions by means of an electrostatic field between two electrodes, and the plasma is reacted by the collision of charged particles and charged particles, or charged particles and electrodes. To create and maintain. In this capacitively coupled plasma generator, it is difficult to generate and maintain plasma at a high vacuum pressure of 10 mTorr or less. In addition, the capacitively coupled plasma generator cannot separate ion density and ion energy during dry etching. Therefore, if the high frequency power is increased to increase the etching speed, it is easy to cause electrical, optical and thermal damage of the material during etching by collision with ions having high acceleration energy.

On the other hand, among the excellent methods for generating a high vacuum high density plasma is widely used is an inductively coupled plasma generation method. This document is summarized in Chapter 2 of Planar Inductively Sources (John C. Forster and John H. Kelle, p.76) by High Density Plasma Sources (Noyes Publication, New Jersey, 1995), edited by Oleg A. Popov, USA. -98) and Chapter 3 Electostatically-Shielded Inductively Coupled RF Plasma Sources (Wayne L. Johnson, p. 100-148). This inductive coupling method is to generate and maintain a plasma by electron induction by a time change of a current flowing through a plasma generating antenna. That is, the plasma generation and maintenance mechanism is due to the interaction between the electromagnetic wave and the charged particles. In addition, unlike the capacitive coupling type, it is possible to generate high-density plasma while maintaining low ion energy at high vacuum. Therefore, it is easy to generate and maintain a high density plasma even at a relatively low pressure of 10 mTorr or less, thereby obtaining a high vacuum high density plasma.

Among the inductive coupling methods, widely used is an external antenna method for disposing a plasma generating antenna outside the chamber. In this method, a coil-like or deformed loop-shaped plasma generating antenna is arranged around the outside of a portion made of a dielectric material such as quartz or alumina in the discharge chamber.

For a more detailed prior art relating to an inductively coupled plasma processing apparatus, reference 1 may be referred to.

[1] Lee, Jung Ho, “Design and Analysis of High Efficiency Inductively Coupled Plasma Generator for Uniformity Improvement,” Sungkyunk University Graduate School, Ph.D. Thesis, 2007.

In general, the vacuum exhaust structure of the dry vacuum high vacuum plasma processing apparatus includes a low vacuum auxiliary pump (also called a roughing pump or a backing pump) and a high vacuum main pump (also referred to as a fore pump). The plasma processing apparatus used a mechanical pump as an auxiliary pump and a turbomolecular pump as a high vacuum foreline pump.

By the way, when the turbomolecular pump is used as a high vacuum foreline pump, there is an advantage that a very high degree of vacuum can be made, but the turbomolecular pump has the following problems.

The turbomolecular pump is composed of a fixed shaft stator and a rotating shaft rotor. The principle of vacuum evacuation is to discharge the gas by rotating the rotor blades of the turbomolecular pump rotor at high speed. In this case, when reactive substances accumulate in an extremely narrow gap between the high speed rotor and the stator of the turbomolecular pump, or impurities, such as sample fragments, are directly connected to the failure of the high speed rotor of the turbomolecular pump.

Turbomolecular pumps are also extremely vulnerable to electrical and mechanical impacts in plasma etching processes. Turbomolecular pumps have a high risk of damage to precision components such as rotary vanes due to mechanical impacts during transportation, and are vulnerable to overload shocks such as power outages and lightning as long as power is normally supplied.

Moreover, turbomolecular pumps are very expensive equipment, and in the event of a breakdown they usually cost tens of thousands of won (over half the cost of purchasing a new product).

In FIG. 1, a picture of a normal turbomolecular pump (left) and a turbomolecular pump (right) in which a stator and a rotor of a turbopump in a process are destroyed together are posted.

As a high vacuum pump instead of the turbomolecular pump, a diffusion pump may be proposed, but the diffusion pump is not without problems.

Conventionally, diffusion pumps have been mainly used for physical vapor deposition such as sputtering and thermal evaporation, but are hardly used for plasma chemical vapor deposition or plasma etching. In particular, in the case of plasma etching requiring high vacuum and high density of ions such as inductively coupled plasma etching, a diffusion pump has not been used and an embodiment thereof has not been found.

The reason for this is that an inert gas such as argon, which is used as a mixed gas in an etching process, and the like has a low binding property with oil gases of the diffusion pump, and thus does not exhaust well. In other words, when a small amount of argon gas flows into the diffusion pump, the pressure in the discharge chamber rises rapidly to depart from the proper inductively coupled plasma etching pressure. Therefore, until now, inductively coupled plasma etching has been carried out under a high vacuum in a narrow range within 1 to 20 mTorr with a constant gas flow rate (for example, 20 scmm) using a turbomolecular pump.

In addition, the diffusion pump repeats the process of vaporizing the oil and cooling it again. In this process, there is a high risk of oil gas flowing back into the plasma reaction chamber. If the oil gas flows back like this, the plasma process cannot be performed properly, and the quality of the plasma-treated substrate is degraded.

Thus, in the present invention, in order to solve the above problems of the prior art, in the exhaust pump of the plasma processing apparatus, induction coupled plasma treatment in which a diffusion pump is employed instead of a turbomolecular pump, and a problem that may occur when the diffusion pump is employed. To provide a device.

The present invention has been made to solve the above problems of the prior art,

In the inductively coupled plasma processing apparatus comprising a vacuum chamber, a plasma generating unit, a gas supply unit, and an exhaust unit,

The exhaust unit,

Diffusion pump;

Auxiliary pump;

A main exhaust line connected to the vacuum chamber and the diffusion pump, the main exhaust line having a throttle valve and serving as an exhaust passage;

An auxiliary exhaust line connected to the vacuum chamber, the diffusion pump, and the auxiliary pump, having a main valve and an auxiliary valve, and serving as an exhaust passage

It provides an inductively coupled plasma processing apparatus comprising a.

In another aspect, the present invention provides an inductively coupled plasma processing apparatus, characterized in that a pressure gauge is provided on the main exhaust line between the throttle valve and the diffusion pump.

In addition, in the present invention, the auxiliary exhaust line is provided with a pressure gauge between the vacuum chamber and the auxiliary pump, and provides an inductively coupled plasma processing apparatus, characterized in that provided with a pressure gauge between the diffusion pump and the auxiliary pump.

In addition, in the present invention, the throttle valve provides an inductively coupled plasma processing apparatus, characterized in that when the pressure gauge exceeds 10 mTorr during the process standby.

In addition, in the present invention, the main exhaust line provides an inductively coupled plasma processing apparatus, characterized in that it has a conductance within the range of 100 to 9 × 10 6 L / s.

In addition, in the present invention, the main exhaust line provides an inductively coupled plasma processing apparatus, characterized in that it has an l / d ratio within the range of 1 × 10 -4 to 1 × 10 3 .

In the present invention, the auxiliary exhaust line, the cross-sectional area is 0.01 cm 2 or more, the inductively coupled plasma processing apparatus, characterized in that the l / d ratio is within the range of 1 × 10 -4 to 1 × 10 3. To provide.

In addition, in the present invention, the diffusion pump is provided with a body, an evaporation tube, a nozzle, oil, cooling means, a heater, an intake port and an exhaust port, the inlet coupled plasma processing apparatus, characterized in that the inlet is provided with a thermometer measuring device. to provide.

In addition, in the present invention, the throttle valve provides an inductively coupled plasma processing apparatus, characterized in that the thermometer is closed when the thermometer indicates 50 ℃ or more.

In addition, in the present invention, the diffusion pump provides an inductively coupled plasma processing apparatus, characterized in that the temperature of the heater is 600 ℃ or less.

In addition, in the present invention, the oil provides an inductively coupled plasma processing apparatus, characterized in that it comprises a silicone oil.

In addition, in the present invention, the auxiliary pump provides an inductively coupled plasma processing apparatus characterized in that one or more selected from a mechanical pump, a dry pump, a booster pump, and an oil rotation pump are connected in series or in parallel.

Plasma processing apparatus of the present invention has a mechanical residual failure rate by employing a diffusion pump is significantly lower than that employing a turbomolecular pump, the maintenance cost is also significantly cheaper, and the high-quality high-density plasma treatment is possible.

EMBODIMENT OF THE INVENTION Hereinafter, this invention is demonstrated in detail.

The present invention,

In the inductively coupled plasma processing apparatus comprising a vacuum chamber, a plasma generating unit, a gas supply unit, and an exhaust unit,

The exhaust unit,

Diffusion pump;

Auxiliary pump;

A main exhaust line connected to the vacuum chamber and the diffusion pump, the main exhaust line having a throttle valve and serving as an exhaust passage;

An auxiliary exhaust line connected to the vacuum chamber, the diffusion pump, and the auxiliary pump, having a main valve and an auxiliary valve, and serving as an exhaust passage

Characterized in that it comprises a.

In particular, in the present invention, the main exhaust line may be further provided with a pressure gauge between the throttle valve and the diffusion pump.

In the conventional use of diffusion pumps in vacuum equipment, the biggest concern is the initial backflow of the diffusion pump oil vapor. In the present invention, in order to solve this problem, in addition to the two pressure gauges used to measure the pressure of the main exhaust line and the auxiliary exhaust line in a high vacuum system, the steam pressure of the diffusion pump is measured at the main exhaust line between the throttle valve and the diffusion pump. A pressure gauge can be added.

The pressure gauge can measure the steam pressure of the diffusion pump, and can control the opening and closing conditions, opening and closing speed, appropriate valve position, opening and closing cycles of the throttle valve based on this value.

When the pressure of the diffusion pump inlet port for maintaining high vacuum is higher than a given reference pressure (10 mTorr in the embodiment of the present invention) in the process standby condition where no gas is introduced into the chamber, the throttle valve is controlled to not open so that the Initial backflow can be minimized. At this time, the control of the valve may be performed manually by a person, or may be automatic control through a mechanical device, circuit wiring, computer, or the like by a fluid. The automatic control device can use the automatic control device disclosed in the prior art without limitation.

The main exhaust line is characterized in that it has a conductance within the range of 100 to 9 × 10 6 l / s. At less than 100 l / s, no matter how good the performance of the diffusion pump may be, a process pressure suitable for plasma treatment may not be reached, and if it exceeds 9 × 10 6 l / s, it may be inefficient in view of the performance of the diffusion pump. have. In one embodiment of the present invention, the conductance of the main exhaust line was used that is about 3,000 L / s.

Conductance is a term used when discussing the motion of gas through a vacuum system and refers to the ability of a pipe (line of the invention) to pass gas through a given time. It can be described as viscous flow at low vacuum (760 to 10 -2 Torr) and molecular flow at high vacuum (10 -3 to 10 -10 Torr), meaning how easily the gas can reach any pump. to be. High conductance, therefore, indicates a high degree of gas reaching the pump and is an important factor in constructing a high vacuum chamber. Conductance is influenced not only by the length, diameter and pressure difference of the pipe, but also by the properties of the material such as the temperature, the shape of the pipe, the shape and the roughness.

The main exhaust line preferably has a ratio of diameter to length l / d (l: length of line, d: diameter of line) in the range of 1 × 10 −4 to 1 × 10 3 . If it is smaller than the above range, there is a problem in manufacturing, if larger than this may not be suitable for high vacuum exhaust.

In the present invention, it is preferable that the auxiliary exhaust line has a cross-sectional area of 0.01 cm 2 or more and an l / d ratio of 1 × 10 −4 to 1 × 10 3 . The minimum cross-sectional area for vacuum evacuation is easier to evacuate if it is above the above-mentioned range, and if the ratio of 1 / d is also less than the above-mentioned range, there is a problem in manufacturing, and if it is larger than that, it is difficult to make a vacuum for the process.

In the present invention, the diffusion pump is provided with a body, an evaporation tube, a nozzle, oil, a cooling means, a heater, an intake port and an exhaust port, and the intake port has a thermometer measuring device. In particular, the diffusion pump of the present invention includes a thermometer in the inlet port so that the temperature of the diffusion pump inlet and the heater portion can be accurately monitored.

 In this invention, it is preferable that the said throttle valve is closed when the said thermometer measuring instrument shows 50 degreeC or more. If the diffusion pump intake port is above the above temperature, there is a problem in cooling of the diffusion pump. If the intake port of the diffusion pump is opened above the temperature, the chamber may be contaminated. At this time, the control of the valve may be performed manually by a person, or may be automatic control through a mechanical device, a circuit wiring, a computer, or the like by a fluid. The automatic control device can use the automatic control device disclosed in the prior art without limitation.

The heater temperature of the diffusion pump is preferably 600 ° C or less. High temperatures above 600 ° C. can alter the properties of the oil for the exhaust of the etching gas, thereby reducing the etching process efficiency. At this time, the heater temperature control may be manually performed by a person, but may be automatic control through a mechanical device, a circuit wiring, a computer, or the like by a fluid. The automatic control device can use the automatic control device disclosed in the prior art without limitation. Mainly ON / OFF controller is used.

Hereinafter, the present invention will be described in more detail with reference to one embodiment. Embodiments herein are for the purpose of describing the invention only, and are not intended to limit the scope of the invention.

2 shows a configuration of an embodiment of a plasma processing apparatus of the present invention.

In one embodiment of the present invention, the vacuum chamber 10 is a reaction space in which a plasma treatment such as plasma etching or deposition occurs. The vacuum chamber 10 is connected to the gas supply part 30 and the exhaust part 40, and has a closed structure so that a vacuum pressure can be applied.

The chuck 210 and the plasma generating electrode 220 are disposed in the vacuum chamber 10 (the chuck 210 and the plasma generating electrode 220 may be integrated into one), and the chuck 210 has a high frequency bias. The power supply 240 is connected, and the RF antenna 230 for inductively coupled plasma is provided outside the vacuum chamber 10. One end of the RF antenna 230 is connected to a high frequency bias power supply 250, and the other end is connected to earth.

In one embodiment of the present invention, the plasma generator 20 is a chuck 210 for raising the substrate 100 that is a plasma treatment object, the plasma generating electrode 220 for generating a plasma, by independently generating an induced electric field RF antenna 230 for increasing the density of the plasma, the plasma generating electrode and the high frequency bias power supply (240, 250) for supplying RF power to the RF antenna 230.

The substrate 100 rests on the chuck 210. The heat exchange pipe 262 is attached to the inside of the chuck 210. The temperature of the chuck 210 is controlled by the cooling or hot fluid supplied by the heat exchanger 264. The gas temperature controller uses the PID control method, but may be used with a holding circuit, PI control or simple ON / OFF control, if necessary. For high temperature heat transfer, an electric resistance heater or the like may be provided in the chuck 210. Although the chuck 210 and the plasma generating electrode 220 may be provided separately, they may be combined into one. In one embodiment of the present invention, the chuck 210 and the plasma generating electrode 220 are integrated.

The chuck 10 is connected to a bias high frequency power supply 244 via an impedance matching circuit 242. The impedance matching circuit 242 and the bias high frequency power supply 244 constitute a high frequency bias power supply 240.

The alternating power induced by the bias high frequency power supply 244 is impedance-adjusted to the impedance matching circuit 242 and supplied to the chuck 210, and the bias voltage of the substrate 100 is adjusted. Around the chuck 210 is a shield plate 270 connected to the vacuum chamber 10, and the chuck 210 is electrically insulated from the chamber 10 by an insulator 272. The frequency of the bias high frequency power supply 244 uses the frequency for plasma generation. The bias power supply usually uses the high frequency power supply of about 1 to 50,000 W, and more preferably, about 1 to 1,000 W.

The RF antenna 230 is a copper pipe bent in an annular shape of approximately three wheels. The diameter of the outermost ring can be adjusted as about 300 mm. The copper pipe lies horizontally on the chamber ceiling and is separated from the vacuum chamber 10 by a quartz glass plate 222 which is an insulator. Cooling water is introduced into the moving pipe to cool the electrode. However, it can be cooled by air as needed, and it does not need to cool in case of small electric power.

The introduction terminal 232 of the RF antenna 230 is connected to the high frequency power source 254 through an impedance matching circuit 252. The impedance matching circuit 252 and the high frequency power supply 254 constitute a high frequency bias power supply 250. The frequency of the high frequency power supply 254 is 13.56 MHz, and the rated output is 2 kW. However, the frequency is not limited to this, and kHz, 60 MHz, or 100 MHz may be used, and the use range is about 10 kHz to 1000 MHz. If the upper limit is exceeded, the conductor cannot be used as a wiring material. If the lower limit is exceeded, the conductor is not transmitted as radio waves. The output waveform may be not only a sine wave but also a waveform in which a predetermined deformation is applied thereto. As the impedance matching circuit 252, a pi (pi) type circuit is used, but other T type circuits may be used. The alternating power induced by the high frequency power supply 254 is impedance-adjusted to the impedance matching circuit 252 and supplied to the plasma generating electrode 230 through the introduction terminal 232.

The power supplied to the RF antenna 230 uses a high frequency power of about 1 ~ 90,000 W, and more preferably about 1 ~ 2,000 W.

In one embodiment of the present invention, the gas supply unit 30 is composed of a gas supply line 310, gas control plate 320, gas flow rate regulator 330, gas tank 340, and vaporizer 350.

The gas may be injected by directly connecting a gas such as nitrogen to the gas supply line 310 using the gas tank 340, or may be injected by vaporizing a liquid or solid substance into the vaporizer 350. . The gas may be controlled by a gas flow meter 330 to control its pressure and flow.

The gas includes a gas containing an oxygen component such as O 2 , N 2 O; A gas containing a fluorine component such as CF 4 and SF 6 ; A gas containing a chlorine component such as Cl 2 and BCl 3 ; An inert gas such as Ar, N 2 may be used alone or in combination.

In one embodiment of the present invention, the exhaust unit 40 is a diffusion pump 410, auxiliary pump 420, main exhaust line 430, secondary exhaust line 440, throttle valve 450, main valve 452 ), An auxiliary valve 454, and pressure gauges (460, 461, 462). The pressure gauges 460, 461 and 462 may include a main exhaust line 430 between the throttle valve 450 and the diffusion pump 410, and an auxiliary exhaust line 440 between the vacuum chamber 10 and the auxiliary pump 420. It is provided on the auxiliary varnish line 440 between the diffusion pump 410 and the auxiliary pump 420, respectively.

In one embodiment of the present invention, the auxiliary pump 420 is an oil rotary pump (exhaust rate 600 liters per minute), and is connected to the vacuum chamber 10 through the auxiliary exhaust line 440. When the cleanliness of the vacuum chamber 10 is very important, an oil free pump may be used as the auxiliary pump 420, and a dry pump may be used when improving the integrity. Of course, you may use a general purpose mechanical pump and a booster pump.

In one embodiment of the present invention, the diffusion pump 410 is connected to the vacuum chamber 10 through the main exhaust line 430, therebetween is provided with a throttle valve 450 to adjust the displacement. An auxiliary pump 420 is connected to the rear end of the diffusion pump 410. The main valve 452 is provided in the auxiliary exhaust line 440 between the diffusion pump 410 and the auxiliary pump 420, and the auxiliary valve 454 is connected between the diffusion pump 410 and the auxiliary pump 420. It is provided on the auxiliary exhaust line 440 from the auxiliary exhaust line 440 to the vacuum chamber 10.

As the oil of the diffusion pump 410, conventionally used in the diffusion pump may be used without limitation. Examples of such oils include mineral oils, silicon oils, polyphenyl ethers, perfluro polyethers, or synthetic oils thereof. In one embodiment of the present invention, silicone oil was used as the diffusion pump oil. The oil used in the plasma processing apparatus preferably has a low vapor pressure, and in particular, does not react with the gas injected into the process to generate unexpected by-products. In this respect, silicone oil is preferable as the diffusion pump oil of the present invention because of excellent chemical resistance and low price. If the price is not taken into consideration, it is also possible to use a polypheyl ether oil having excellent chemical resistance.

Figure 3 shows a diffusion pump of one embodiment of the present invention. In one embodiment of the present invention, the diffusion pump is the body 411, the evaporation tube 412, the nozzle 413, the oil 414, the cooling coil 415, the heater 416, the inlet 417 and the exhaust port 418 is provided, and the inlet port is provided with a thermometer measuring instrument 419.

The principle of the exhaust of the diffusion pump is that when the oil at the bottom of the diffusion pump is heated by the heater, the oil vapor rises along the evaporation tube and is injected downward through the nozzle. At this time, the surrounding gas molecules are also moved in the same direction and exhausted. For the prior art for the diffusion pump, reference may be made to Jing Heon Heo, "Vacuum Technology Practice", Hongneung Science Publishing Co., 2004, p. 174, which is incorporated by reference in the present specification.

In the inductively coupled etching using the apparatus of the present invention can be used in the range of 1 ~ 1,000 mTorr, more preferably in the range of 1 ~ 200 mTorr. At this time, the flow rate of the gas can be controlled by the flow regulator and the process pressure can be controlled by the throttle valve.

Hereinafter, an operation example of the apparatus of the present invention will be described. Plasma treatment was performed on various kinds of substrates using the apparatus of the present invention.

Operation example

Before the plasma process, that is, the state during the process standby may be made through the exhaust process as follows.

When evacuating the vacuum chamber 10 from atmospheric pressure, first, all the valves except the auxiliary valve 454 are shut off and the oil rotating pump is operated so that the internal pressure of the vacuum chamber 10 is a predetermined pressure (depending on the exhaust system, but in this embodiment, When exhausted to 60 mTorr), the auxiliary valve 60 is closed and the main valve 452 connected to the diffusion pump 410 is opened. The vacuum chamber 10 is provided with a chamber pressure gauge 110, it is possible to measure the pressure. At this time, the diffusion pump is a state that the oil is sufficiently vaporized by heating the heater 59, the cooling water flows to the outside through the cooling coil 415. Where the pressure gauges 461 and 462 reach a given constant pressure (e.g., pressure gauge 461: about 1 mTorr or less, pressure gauge 462: about 50 mTorr or less), and the throttle valve 450 and the diffusion When the pressure gauge 460 on the main exhaust line between the pumps 410 is about 10 mTorr or less, the throttle valve 450 is opened to exhaust the vacuum chamber 10 to the high vacuum region. In the conventional case, the main exhaust line (foreline) valve and the throttle valve were used separately, but in the present invention, the main exhaust line (foreline) valve and the throttle valve are combined and newly developed by using the newly developed integral throttle valve 450. The pressure of the pump was adjusted.

The other plasma treatment process except for the exhaust process used a conventional technique, which is already known to those of ordinary skill in the art, so a description thereof will be omitted.

Plasma etching was performed on the Cyclic Olefin Copolymer (COC) material, Polymethylmethacrylate (PMMA) material, and olycarbonate (PC) material, respectively.

4 to 6 is a graph of the result of etching the material according to the process pressure change through the diffusion pump inductively coupled plasma etching apparatus developed through the present invention. The process conditions used at this time were fixed with 5 sccm (standard cubic centimeter per minute) oxygen gas, 300 W inductively coupled plasma (ICP) power, 100 W sample chuck bias (RIE) power. In addition, for comparison with the conventional capacitively coupled plasma etching, the plasma etching result of applying the sample chuck bias alone to 100 W without applying the inductively coupled plasma power source in the diffusion pump inductively coupled plasma etching apparatus is also shown.

The results show that first, inductively coupled plasmas are much faster than capacitively coupled plasmas (approximately 50 for PMMA), even with relatively low inductively coupled powers of 300 W in both the etch of Cyclic Olefin Copolymer (COC), PMMA and polycarbonate. At least%) to provide an etching rate. In particular, the results showed that the PMMA, PC, and COC materials showed the maximum etching rate when the pressure range was 60 mTorr.

Second, the graphs show that even in the case of using a diffusion pump, inductively coupled plasma etching of the material is possible while maintaining sufficient pressure for inductively coupled plasma etching. This is the first data to show that the plasma etching process is possible with diffusion pump.

Third, as the plasma process pressure increases, the inductively coupled plasma etching rate tends to converge with the capacitively coupled plasma etching rate. That is, even at a process pressure of 200 mTorr or more, even if power was applied to the inductively coupled plasma, it could be seen that there may be no difference from the capacitively coupled plasma etching rate, which may not be practically significant.

Although the plasma processing apparatus of the present invention has been described above with reference to the drawings, those skilled in the art will be able to perform various applications and modifications within the scope of the present invention based on the above contents.

1 is a photograph of a normal turbomolecular pump (left) and a turbomolecular pump (right) in which a stator and a rotor of a turbopump in a process are destroyed together.

Figure 2 is a schematic diagram showing the configuration of an embodiment of a plasma processing apparatus of the present invention.

3 is a schematic view showing the configuration of a diffusion pump of the plasma processing apparatus of the present invention.

4 is a graph showing results of diffusion pump inductively coupled plasma (ICP) etching and reactive ion etching (RIE) of Cyclic Olefin Copolymer (COC) material according to process pressure.

5 is a graph showing the results of diffusion pump inductively coupled plasma (ICP) etching and reactive ion etching (RIE) of polymethylmethacrylate (PMMA) material according to the process pressure.

FIG. 6 is a graph showing results of diffusion pump inductively coupled plasma (ICP) etching and reactive ion etching (RIE) of polycarbonate (PC) materials according to process pressures.

Explanation of Reference Numbers

1: plasma processing apparatus

10: vacuum chamber 20: plasma generating unit

30: gas supply part 40: exhaust part

100 substrate 110 chamber pressure gauge

210: chuck 220: plasma generating electrode

222: quartz glass plate

230: RF antenna 232: Introduction terminal

240, 250: high frequency bias power supply 242, 252: impedance matching circuit

244, 254: high frequency power 262: heat exchange pipe

264 heat exchanger 270 shield plate

272: insulator

310: gas supply line 320: gas control plate

330: gas flow regulator 340: gas tank

350: carburetor

410: diffusion pump 411: body

412: evaporation tube 413: nozzle

414 oil 415 cooling coil

416: heater 417: intake vent

418: exhaust port 419: thermometer measuring instrument

420: auxiliary pump 430: main exhaust line

440: auxiliary exhaust line 450: throttle valve

452: main valve 454: auxiliary valve

460, 461, 462: pressure gauge

Claims (12)

In the inductively coupled plasma processing apparatus comprising a vacuum chamber, a plasma generating unit, a gas supply unit, and an exhaust unit, The exhaust unit, Diffusion pump; Auxiliary pump; A main exhaust line connected to the vacuum chamber and the diffusion pump, the main exhaust line having a throttle valve and serving as an exhaust passage; An auxiliary exhaust line connected to the vacuum chamber, the diffusion pump, and the auxiliary pump, having a main valve and an auxiliary valve, and serving as an exhaust passage Inductively coupled plasma processing apparatus comprising a. The inductively coupled plasma processing apparatus of claim 1, wherein a pressure gauge (460) is provided on the main exhaust line between the throttle valve and the diffusion pump. The inductive coupling type of claim 1, wherein the auxiliary exhaust line includes a pressure gauge 462 between the vacuum chamber and the auxiliary pump, and a pressure gauge 461 between the diffusion pump and the auxiliary pump. Plasma processing apparatus. The inductively coupled plasma processing apparatus of claim 2, wherein the throttle valve is closed when the pressure gauge (460) exceeds 10 mTorr during the process atmosphere. The inductively coupled plasma processing apparatus of claim 1, wherein the main exhaust line has conductance within a range of 100 to 9 × 10 6 L / s. The inductively coupled plasma processing apparatus of claim 1, wherein the main exhaust line has an l / d ratio within a range of 1 × 10 −4 to 1 × 10 3 . The inductively coupled plasma processing apparatus of claim 1, wherein the auxiliary exhaust line has a cross-sectional area of 0.01 cm 2 or more and an l / d ratio of 1 × 10 −4 to 1 × 10 3. . The inductively coupled plasma processing apparatus of claim 1, wherein the diffusion pump includes a body, an evaporation tube, a nozzle, oil, cooling means, a heater, an intake port, and an exhaust port, and a thermometer measuring device is provided in the intake port. 9. The inductively coupled plasma processing apparatus of claim 8, wherein the throttle valve is closed when the thermometer gauge shows 50 ° C or more. The inductively coupled plasma processing apparatus of claim 8, wherein the diffusion pump has a heater temperature of 600 ° C. or less. The inductively coupled plasma processing apparatus of claim 8, wherein the oil comprises silicone oil. The inductively coupled plasma processing apparatus of claim 1, wherein the auxiliary pump is connected to one or more selected from a mechanical pump, a dry pump, a booster pump, and an oil rotary pump in series or in parallel.
KR1020090039103A 2009-05-06 2009-05-06 Plasma processing apparatus having a diffusion pump KR20100120336A (en)

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PCT/KR2009/006181 WO2010128740A1 (en) 2009-05-06 2009-10-26 Inductively coupled plasma processing apparatus employing diffusion pump

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102140711B1 (en) * 2019-10-17 2020-08-03 주식회사 프라임솔루션 A hi-vacuum plasma residual gas analizer and method for analysing residua gas of the same

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SG70035A1 (en) * 1996-11-13 2000-01-25 Applied Materials Inc Systems and methods for high temperature processing of semiconductor wafers
JP3846970B2 (en) * 1997-04-14 2006-11-15 キヤノンアネルバ株式会社 Ionization sputtering equipment
JP5324026B2 (en) * 2006-01-18 2013-10-23 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing apparatus control method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102140711B1 (en) * 2019-10-17 2020-08-03 주식회사 프라임솔루션 A hi-vacuum plasma residual gas analizer and method for analysing residua gas of the same

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