KR20100113925A - Apparatus for manufacturing directly silicon substrate for solar cell using continuous casting, method of manufacturing silicon substrate using the apparatus and silicon substrate manufactured the method for solar cell - Google Patents

Abstract

PURPOSE: A silicon substrate for the solar battery and the manufacturing method thereof which is manufactured by directly using the manufacturing device, and this the silicon substrate for the solar battery using the continuous casting method keeps the high - liquid interface formed into the substrate growth direction and vertical direction. CONSTITUTION: The melt region(310) forms the molten silicon. The heating portion(312) heats the melt region. A space of casting part(320) casts the fused silicon to the silicon substrate of the plate type. The transport unit(330) horizontally transfers the solidified silicon substrate.

Description

Silicon substrate for solar cell direct manufacturing apparatus using continuous casting method, silicon substrate for solar cell manufactured using same and method for manufacturing the same {APPARATUS FOR MANUFACTURING DIRECTLY SILICON SUBSTRATE FOR SOLAR CELL USING CONTINUOUS CASTING MANUFACTURED THE METHOD FOR SOLAR CELL}

The present invention relates to an apparatus and method for directly manufacturing a silicon substrate for continuously manufacturing a silicon substrate for a solar cell substrate, and more particularly, to high productivity and energy conversion efficiency of a silicon substrate for a solar cell using continuous casting. The present invention relates to a solar cell silicon substrate continuous manufacturing apparatus and method capable of improving both the quality and the like of a silicon substrate for improvement.

Generally, a silicon substrate for a solar cell is manufactured by melting a silicon, solidifying the molten silicon to produce a single crystal silicon ingot or a polycrystalline silicon block, and then cutting through several cutting processes.

The single crystal silicon ingot for manufacturing a silicon substrate for solar cells is manufactured by the Czochralski method through a crystal growth process using seed crystals from the molten silicon.

The polycrystalline silicon block manufactured by another method is manufactured through a one-way solidification process using a heat exchanger method (HEM) method or a bridman-stockbarger method. The monocrystalline silicon ingot or polycrystalline silicon block thus manufactured is manufactured into a silicon substrate through several steps of cutting process.

A silicon substrate using a single crystal silicon ingot is manufactured through the manufacturing process as shown in FIG. 1.

The first cropping process is to cut the shoulder and tail of the ingot. The second grinding process is to grind the ingot to the desired size (diameter), and the third flatting is flat and notch form one part of the ingot for direction recognition. The fourth slicing (sawing) is the process of cutting the ingot into wafer shape, the fifth edge profiling (edge rounding) is the process of rounding the wafer edge to prevent cracking, and the sixth lapping is Slicing is the process of polishing both sides of the wafer to remove defects, improve flatness, and adjust the thickness.The seventh etching process is to chemically remove the defect layer on the surface of the wafer, and the final eighth polishing process chemically and physically The first cropping, second grinding, Flatting discarded by the second and fourth cutting loss (Kerf-loss) to 50% of the ingot over the course of slicing.

Meanwhile, the silicon substrate using the polycrystalline silicon block is manufactured through the manufacturing process as shown in FIG. 2.

The first blocking is the process of cutting the polycrystalline silicon block to the desired size, the second cropping is the process of cutting the head and tail of the block, the third edge grounding is the process of rounding the edge of the block, and the fourth slicing is The fifth polishing process is to cut the block into wafer shape, and the fifth polishing process is to polish the cross section or both sides by chemical and physical methods to produce defect-free mirror surface with excellent flatness. The first blocking, second cropping, and third edge grounding In the fourth slicing, the cutting loss is more than 40%.

As described above, when a silicon substrate is manufactured using a single crystal silicon ingot or a polycrystalline silicon block, more than 40% of cutting loss occurs due to various cutting processes. The cutting loss generated during the substrate manufacturing process acts as a key factor in the increase in the manufacturing cost of the silicon substrate, which is a core material of the solar cell.

Therefore, in the recent solar cell silicon substrate manufacturing process, a thin silicon substrate is obtained directly from molten silicon without the conventional single crystal silicon ingot or polycrystalline silicon ingot manufacturing process and the ingot cutting process. It is prevented at the source.

In other words, the method can directly manufacture the substrate solidified directly from the molten silicon, eliminating the ingot fabrication and cutting process can reduce the silicon substrate production cost by up to 50%.

Currently, the silicon substrate direct manufacturing technology for solar cells is known in the vertical growth technology and horizontal growth technology. Known vertical growth technologies include edge-defined film-fed growth (EFG) and string ribbon (SR), and horizontal growth technologies include rib growth on substrate (RGS), silicon film technology, and crystallization on dipped (CDS). Substrate).

FIG. 3 is a schematic diagram of a solidification method of a silicon substrate manufactured by a ribbon growth on substrate (RGS) method of directly manufacturing a silicon substrate horizontally from molten silicon melt, and a microstructure of the silicon substrate manufactured by the solidification method. It is.

Silicon manufacturing technology by RGS method is one of silicon technology direct manufacturing technology by horizontal growth, and by directly removing latent heat of silicon substrate manufactured through lower substrate, it secures high production speed and manufactures silicon substrate for solar cell which is currently commercialized. It has the highest productivity of any technology.

Referring to FIG. 3, when manufacturing a silicon substrate for a solar cell by the present method, the solid-liquid interface generated during the silicon substrate formation process is perpendicular to the horizontal substrate growth direction in the vertical direction to form a sloped surface when manufacturing the silicon substrate. do. Therefore, since the grains are dense and solidification proceeds along the inclined solid-liquid interface, impurities are segregated onto the silicon substrate surface, resulting in deterioration of the quality of the manufactured silicon substrate.

When the silicon substrate manufactured as described above is used as a solar cell substrate, since the quality of the substrate to be used is not excellent, high energy conversion efficiency cannot be expected and energy conversion efficiency is lowered.

In the case of the vertical growth technology, since the crystal growth direction is parallel to the advancing direction, the crystal grows in the longitudinal direction and thus the crystal size is large, which has the advantage of increasing the conversion efficiency of the solar cell. However, in the case of the vertical growth technology, while having the above advantages, there is a disadvantage in terms of productivity due to the very slow solidification rate.

On the other hand, in the case of the horizontal growth technology, since the crystal growth direction and the advancing direction are perpendicular, the crystals grow in the thickness direction of the substrate, so that the crystal size is small and the conversion efficiency is lower than that of the vertical growth technology due to precipitation of impurities. It is possible to efficiently remove the latent heat through the substrate has the advantage of growing the substrate at high speed.

Therefore, the conventional silicon substrate direct manufacturing technology has a trade-off between the productivity of the silicon substrate and the energy conversion efficiency. Therefore, the silicon substrate manufacturing technology, which can be applied to solar cell substrates and the like, increases both the productivity and quality of the silicon substrate. Required.

An object of the present invention is to control impurities that adversely affect energy conversion efficiency by maintaining the solid-liquid interface of a silicon substrate manufactured by applying continuous casting, which facilitates continuous production and property control, perpendicular to the substrate growth direction. The present invention provides a solar cell silicon substrate direct manufacturing apparatus using a continuous casting method that can easily control the grain size and at the same time, and a silicon substrate manufacturing method for the solar cell using the same.

Solar cell silicon substrate direct manufacturing apparatus using a continuous casting method according to the present invention for achieving the above object is a silicon melting crucible is formed with a discharge groove in the horizontal direction on one side, the melting portion silicon is melted; A heating part for heating the melting part; A casting space part in which molten silicon is passed through a discharge groove of the melting part to be cast into a plate-type silicon substrate, a cooling solidification part in which the plate-type silicon substrate is cooled and solidified, and the cooling Located at the end of the solidification portion, and includes a transfer unit for transporting the cooled solidified silicon substrate horizontally.

Through the silicon substrate direct manufacturing apparatus using the continuous casting method according to the present invention, the silicon substrate for solar cells is cast into a plate-type silicon substrate in the casting space by discharging the silicon melted in the molten portion in the horizontal direction through the discharge groove The cast plate-type silicon substrate may be manufactured by a process of continuously solidifying and transferring the dummy plate in contact with the end of the cooling solidification part.

At this time, the transfer speed of the dummy plate and the solidified silicon substrate coincides with the solidification rate of silicon, and the solid-liquid interface for solidification of silicon is formed in the direction perpendicular to the substrate growth direction.

The molten part may be supplied with an inert gas such as argon that induces ejection of molten silicon through pressurization. In addition, by discharging the gas through a plurality of gas suction holes formed through the inside of the dummy plate, discharge of molten silicon may be induced together with the pressurization by the inert gas.

The method of manufacturing a silicon substrate for a solar cell using the above-described manufacturing apparatus includes (a) charging a silicon raw material into a melting part and melting the silicon raw material charged using a heating part; (b) discharging molten silicon in a horizontal direction through discharge grooves on one side of the melter; (c) casting the plate-shaped silicon substrate in the casting space inside the casting space portion; (d) cooling the cast silicon substrate in the cooling solidification and continuously solidifying from the end of the dummy plate; And (e) transferring the dummy plate and the solidified silicon in a horizontal direction.

In step (a), the inert gas, which induces the discharge of molten silicon through pressurization, may be supplied at a flow rate of approximately 700 to 900 sccm, and is formed through the inside of the dummy plate disposed in the initial casting space. Gas suction through a plurality of gas suction holes may be further made.

And the solidification rate of the silicon of step (d) coincides with the transfer rate of the solidified silicon of step (e).

The silicon substrate direct manufacturing apparatus for a solar cell using the continuous casting method according to the present invention can increase the productivity of the silicon substrate for solar cell manufacturing by using the continuous casting method that is easy to control productivity and physical properties, and the crystal growth direction of the silicon substrate to be manufactured is also improved. As shown in FIG. 4, the grain size of the finally formed silicon substrate is maintained to be parallel to the growth direction of the substrate.

In addition, by maintaining the solid-liquid interface formed perpendicular to the substrate growth direction, impurities that adversely affect the energy conversion efficiency can be continuously moved toward the molten silicon. The migrated impurities can continue to escape into the molten silicon to maintain the high purity of the resulting silicon substrate.

Therefore, the silicon substrate manufactured using the silicon substrate direct manufacturing apparatus for solar cells using the continuous casting method according to the present invention can obtain a high energy conversion efficiency to a low cost substrate when applied to the solar cell substrate.

Advantages and features of the present invention and methods for achieving them will be apparent with reference to the examples described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the examples disclosed below, but may be implemented in various forms, and only the examples are intended to complete the disclosure of the present invention and those skilled in the art to which the present invention pertains. It is provided to fully inform the scope of the invention, and the invention is defined only by the scope of the claims. Like reference numerals refer to like elements throughout.

Hereinafter, a solar cell silicon substrate direct manufacturing apparatus using a continuous casting method according to the present invention and a solar cell silicon substrate direct manufacturing method using the same will be described in detail with reference to the accompanying drawings.

In the manufacture of silicon substrates for solar cells directly from molten silicon, the productivity is determined by the solidification rate of silicon, and the energy conversion efficiency is determined by the microstructure of the silicon substrate. The faster the solidification rate, the higher the productivity. The larger the grain size, the higher the quality of the energy conversion efficiency can be.

Figure 4 shows the solidification method and the microstructure using the continuous casting method to which the present invention is applied.

Referring to FIG. 4, when the silicon substrate is manufactured, the silicon crystal growth direction is kept horizontal with the growth direction of the silicon substrate to be manufactured. Accordingly, as shown in the right figure of FIG. 4, not only the grain size of the final silicon substrate is large, but also impurities contained in the molten silicon are dissolved in the molten silicon due to the vertical solid-liquid interface generated during the silicon solidification process. Can be made to produce high quality silicon substrates.

In addition, in the case of direct manufacturing of a silicon substrate for a solar cell using the continuous casting method, the solidification speed can be increased by quenching through contact with the casting part, and the productivity of the silicon substrate can be improved by controlling the transfer speed of the dummy plate.

Therefore, the direct manufacturing technology of the silicon substrate for solar cells using the continuous casting method applied to the present invention can increase both the productivity and the quality which were conflicted with the conventional vertical growth technology and the horizontal growth technology, and thus, the price competitiveness is required and high energy. There is an advantage that can be applied to a substrate for a solar cell that requires conversion efficiency.

Silicon Substrate Direct Manufacturing Equipment

Figure 5 schematically shows a silicon substrate direct manufacturing apparatus for a solar cell using a continuous casting method according to the present invention.

FIG. 5 illustrates a silicon manufacturing apparatus 300 including a melting part 310 in which molten silicon is formed, a heating part 312 for heating the melting part, a casting part 320 in which molten silicon is solidified, and solidified. And a transfer part 330 to which the silicon substrate is transferred.

The melting part 310 is a silicon melting crucible, and a silicon raw material is charged into the melting part 310, and is heated through a heating part 312 such as a heater, an induction coil, a plasma, an e-beam device, or the like disposed on the side surface. It heats and melts the silicon raw material charged in the inside. At this time, the melting method of silicon is not limited, but it is preferable to use an induction melting method using an induction coil.

Discharge grooves 314 in a horizontal direction are formed at one side of the melting part 310, and silicon melted in the casting part 320 by silicon melted in the melting part 310 through the discharge grooves 314. Discharged into the silicon casting space 321 provided in the portion 325.

The discharge groove 314 may be made of a thickness of 100 ~ 500㎛. The thickness of the discharge groove determines the thickness of the silicon substrate to be manufactured, and determines the productivity during continuous casting. If the discharge groove is less than 100㎛, it is difficult to control the solid-liquid interface in the vertical direction, the mechanical strength of the solidified substrate is lowered, there is a fear that the silicon substrate may be damaged during continuous production, the process control is difficult. In order to increase the fluidity of the molten silicon by lowering the viscosity, the temperature of the molten silicon discharged through the discharge groove 314 is preferably controlled at 1450 to 1500 ° C slightly higher than the silicon melting temperature (1414 ° C).

On the other hand, when the thickness of the discharge groove 314 exceeds 500㎛, it is relatively easy to control the solid-liquid interface, but there is a disadvantage that the solidification time is long, the production speed is lowered. Therefore, the discharge groove is preferably formed to a thickness of 100 ~ 500㎛, more preferably 200 ~ 300㎛ thickness in order to obtain easy control and high productivity of the solid-liquid interface.

An inert gas such as argon (Ar) gas may be supplied to the melting part 310. The supplied inert gas pressurizes the inside of the melting part 310 to induce discharge of molten silicon through the discharge groove 314. The lower the temperature of the molten silicon discharged through the discharge groove 314, the lower the fluidity, so the pressurization by the inert gas is made larger, on the contrary, the higher the temperature of the molten silicon, the higher the fluidity becomes, so pressurized by the inert gas Can be made relatively small.

At this time, the pressure by the inert gas increases as the flow rate of the supplied inert gas increases. In this case, as the pressure by the inert gas increases, the discharge induction effect may be increased. However, when the pressure due to the inert gas is too high, pores may be formed into the silicon melt to reduce the density of the finally manufactured substrate. Therefore, the inert gas is preferably controlled in the flow range of 700 ~ 900sccm. When the supply flow rate of the inert gas is less than 700sccm, it is difficult to discharge the molten silicon due to the small pressurization effect, and when the supply flow rate of the inert gas exceeds 900sccm, the silicon produced by forming pores in the silicon melt as described above The density of a board | substrate can be reduced.

Since the pressurization by the inert gas has a limitation in the pressure range for the same reason as above, only pressurization by the inert gas may not completely induce discharge of molten silicon. This problem may be solved by forming a plurality of gas suction holes 610 of FIG. 6 by penetrating the inside of the dummy plate 322 disposed in the casting part 320. In this case, the dummy plate 322 is initially connected to the discharge groove 314, and the pressurization by the inert gas and the gas suction toward the casting part 320 through the plurality of gas suction holes 610 inside the dummy plate are prevented. At the same time, the effect of inducing discharge of molten silicon can be enhanced.

As shown in FIG. 3, the inert gas may be supplied to the melting unit 310 through the same space as the silicon raw material. In addition, the inert gas may be separately supplied to the inside of the melting part 310 through another space separated from the portion to which the silicon raw material is supplied although not shown in the drawing.

Casting

The casting part 320 is disposed at a side surface of the melting part 310, and as shown in FIG. 6, a plate-type plate horizontally connected to the discharge groove 314 formed in the melting part 310 therein. The silicon substrate casting space 321 is formed. The silicon substrate casting space 321 determines a size of a silicon substrate to be manufactured, and molten silicon is cooled and solidified in the silicon substrate casting space 321.

The casting part 320 includes a casting space part 325 having a casting space 321 for casting molten silicon into a plate-shaped silicon substrate and a cooling solidification part 326 for cooling and solidifying the cast silicon substrate. The cooling solidification unit 326 may be divided into a solidification unit for cooling and solidifying the silicon substrate and a stress release unit for releasing the stress remaining on the solidified silicon substrate.

In the cooling solidification unit 326, the solidification unit takes heat from the molten silicon and serves to solidify it. At this time, it is preferable to form a solid-liquid interface vertically by making the amount of heat transfer at the top and the bottom of the molten silicon uniform.

It is preferable that the thickness of the internal space of the cooling solidification part 326 is formed to be thicker than the thickness of the internal casting space 321 of the casting space part 325. This is to ensure a minimum space for releasing the thermal stress remaining in the solidified silicon substrate after the silicon substrate is solidified. In addition, in the cooling solidification unit 326, the stress releasing unit is designed to have temperature control separately from the solidification unit and to have a temperature gradient in the substrate growth direction. This is to effectively escape the thermal stress remaining in the substrate in the upward direction.

In this case, a dummy plate 322 is disposed in the silicon substrate casting space 321. The end of the dummy plate 322 provides the starting point of the solid-liquid interface for solidifying the molten silicon, so that the molten silicon is continuously solidified while the solid-liquid interface is formed from the end of the dummy plate 322.

At the solid-liquid interface, impurities migrate horizontally towards the molten silicon. Conventionally, impurities are included in the surface of a silicon substrate manufactured by moving impurities in a vertical direction, thereby degrading the quality of the substrate, which causes low energy conversion efficiency when used as a solar cell substrate. By moving in the horizontal direction, the surface of the manufactured silicon substrate is free of impurities, thereby contributing to the improvement of energy conversion efficiency through the high quality silicon substrate.

Conveying part

FIG. 7 illustrates a portion indicated by “A” in FIG. 5. Referring to FIG. 7, a direction in which solidification (solidification) proceeds and a transfer direction of solidified silicon become opposite directions.

8 schematically illustrates a process of transferring the dummy plate and the solidified silicon.

The transfer part 330 is positioned at the end of the casting part 320, specifically, the cooling solidification part 326, and horizontally transfers the solidified silicon from the casting part 320. To this end, the transfer unit 330 may be formed of a pair of rollers 331 and 332 rotating in opposite directions as shown in FIGS. 5 and 8.

At this time, the speed at which the solidified silicon is transferred through the driving of the rollers 331 and 332 provided in the transfer part 330 is controlled to match the solidification speed of the silicon. Through this, the position where the solidification takes place, that is, the position where the solid-liquid interface is formed is a position at the end of the dummy plate 322, which is constant during the continuous casting.

Silicon substrate manufacturing method

A process of manufacturing a silicon substrate using the silicon substrate direct manufacturing apparatus 300 described above is as follows.

First, the silicon raw material is charged into the melting part 310, the temperature of the inside of the melting part 310 is raised through a heater 312 or an induction coil, plasma, or e-beam to melt the silicon raw material, and then the melting part 310 is formed. The molten silicon is discharged to the silicon casting space 321 provided in the casting space 325 of the casting part 320 in the horizontal direction through the discharge groove 314 formed on one side.

Molten silicon is preferably discharged at a temperature of 1450 ~ 1500 ℃ in order to lower the viscosity to increase the fluidity of the molten silicon.

In this case, the discharge induction of the molten silicon may be made by pressurizing the molten part 310 by supplying an inert gas such as an argon gas. If the pressure due to the inert gas is too high, it is preferable to supply the inert gas at a flow rate of approximately 700 to 900 sccm because pores may be formed in the molten silicon to reduce the density of the finally produced substrate.

In addition, in order to increase the discharging effect of the molten silicon, gas suction through the plurality of gas suction holes (610 of FIG. 6) formed in the dummy plate 322 together with pressurization of the inert gas may be used.

Next, the molten silicon is cast into the plate-type silicon substrate in the casting part 320 and then cooled and solidified. The solidification of the silicon proceeds continuously from the end of the dummy plate 322 disposed in the casting part 320. At this time, solidification proceeds while maintaining the solid-liquid interface of silicon vertically through the cooling solidification part of the casting part 320, and thermal stress of the solidified silicon substrate is released.

Next, the dummy plate 322 and the solidified silicon are transferred in the horizontal direction through the transfer unit 330. At this time, the solidification rate of the molten silicon is made at the same speed as the transfer rate of the dummy plate 322 and the solidified silicon is a continuous casting of the silicon substrate.

As described above, the silicon substrate manufacturing method using the continuous casting method according to the present invention can improve the productivity and quality, can be applied to a solar cell substrate.

In the above description, the example of the present invention has been described, but various changes and modifications can be made by those skilled in the art. Such changes and modifications may belong to the present invention without departing from the scope of the present invention. Therefore, the scope of the present invention will be determined by the claims described below.

Figure 1 shows a manufacturing process of a silicon substrate using a conventional single crystal silicon ingot.

2 shows a manufacturing process of a silicon substrate using a conventional polycrystalline silicon block.

Figure 3 shows the conventional solidification method of the rapid solidification method and the microstructure of the manufactured silicon substrate.

Figure 4 shows the solidification method and the microstructure using the continuous casting method to which the present invention is applied.

5 schematically shows a method of manufacturing a silicon substrate using a continuous casting method according to the present invention.

6 illustrates the casting part of FIG. 5.

FIG. 7 illustrates a portion “A” of FIG. 5.

8 schematically illustrates a process of transferring the dummy plate and the solidified silicon.

Claims (17)

A melt melting crucible having a discharge groove in a horizontal direction formed on one side thereof and melting silicon; A heating part for heating the melting part; A casting space part in which molten silicon is cast into a plate-type silicon substrate through a discharge groove of the melting part; A cooling coagulation unit in which the plate-type silicon substrate is cooled and solidified; And Located at the end of the cooling solidification portion, comprising a transfer unit for transporting the solidified silicon substrate horizontally, A dummy plate is disposed in the cooling solidification part, and the silicon substrate direct manufacturing apparatus using the continuous casting method, characterized in that the silicon is continuously solidified from the end of the dummy plate. The method of claim 1, And the transfer speed of the dummy plate and the solidified silicon coincides with the solidification speed of the silicon. The method of claim 1, The cooling solidification unit is a silicon substrate direct manufacturing apparatus using a continuous casting method characterized in that it comprises a solidified portion to which the cast silicon substrate is solidified and a stress release zone (Stress Release zone) for releasing the stress of the solidified silicon substrate. The method of claim 3, The solidification unit and the stress relief unit silicon substrate direct manufacturing apparatus using a continuous casting method characterized in that the temperature control is performed separately. The method of claim 1, The silicon substrate direct manufacturing apparatus using the continuous casting method, characterized in that the internal space of the cooling solidification portion is formed thicker than the internal space of the casting space portion. The method of claim 1, And a molten part is supplied with an inert gas to induce discharge of molten silicon through pressurization. The method of claim 6, The dummy plate is initially disposed to be connected to the discharge groove, and a plurality of gas suction holes are formed through the inside to induce discharge of molten silicon together with the inert gas. Substrate direct manufacturing device. The method of claim 1, The discharge groove is a silicon substrate direct manufacturing apparatus using a continuous casting method, characterized in that made of a thickness of 100 ~ 500㎛. The method of claim 1, The heating unit is a silicon substrate direct manufacturing apparatus, characterized in that any one of a heater, induction coil, plasma and two-beam apparatus. The method of claim 1, The transfer unit is a silicon substrate direct manufacturing apparatus using a continuous casting method, characterized in that consisting of a pair of rollers that rotate in opposite directions. The silicon substrate for solar cells manufactured using the silicon substrate direct manufacturing apparatus in any one of Claims 1-10. In the method of manufacturing a silicon substrate using the silicon substrate direct manufacturing apparatus according to claim 1, (a) charging a silicon raw material into a melting part, and melting the loaded silicon raw material using a heating part; (b) discharging molten silicon in a horizontal direction through discharge grooves on one side of the melter; (c) casting the plate-shaped silicon substrate in the casting space inside the casting space portion; (d) cooling the cast silicon substrate in the cooling solidification and continuously solidifying from the end of the dummy plate; And (e) transferring the dummy plate and the solidified silicon in a horizontal direction, the method of manufacturing a silicon substrate using a continuous casting method. The method of claim 12, The melted part is a silicon substrate manufacturing method using a continuous casting method characterized in that the inert gas for inducing the discharge of molten silicon through the pressurized supply. The method of claim 13, The inert gas is a silicon substrate manufacturing method using a continuous casting method characterized in that supplied at a flow rate of 700 ~ 900sccm. The method of claim 13, And a gas suction through a plurality of gas suction holes formed through the dummy plate. The method of claim 12, In the step (b) the molten silicon is silicon substrate manufacturing method characterized in that the discharge at a temperature of 1450 ~ 1500 ℃. The method of claim 12, The silicon solidification rate of the step (d) is the silicon substrate manufacturing method using the continuous casting method, characterized in that the transfer rate of the solidified silicon of the step (e).

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