KR101248073B1 - Apparatus for manufacturing silicon substrate with excellent surface quality using inert gas blowing and method of manufacturing the same - Google Patents

Abstract

Disclosed are a silicon substrate manufacturing apparatus using an inert gas blowing that can contribute to the improvement of the surface quality of a substrate to be manufactured while improving the productivity of silicon substrate manufacturing using the continuous casting method, and a method of manufacturing the same.
Silicon substrate manufacturing apparatus using an inert gas blowing according to the present invention comprises a silicon raw material input unit is supplied with a silicon raw material; A silicon melting part mounted on a lower portion of the silicon raw material input part to melt the supplied silicon raw material to form a silicon melt; A silicon molten metal storage unit configured to receive the silicon molten metal from the silicon molten unit and to store the molten silicon, and then to discharge the silicon molten metal into a melt having a predetermined thickness; A transfer unit for transferring the silicon melt discharged from the silicon melt storage unit; And a cooling unit cooling the silicon melt conveyed by the conveying unit, wherein the cooling unit cools the silicon melt in an inert gas blowing manner, and the inert gas blowing amount blown is 0.1 to ³ Nm ³ / h. do.

Description

Silicon substrate manufacturing apparatus with excellent surface quality using inert gas blowing and its manufacturing method {APPARATUS FOR MANUFACTURING SILICON SUBSTRATE WITH EXCELLENT SURFACE USUAL INERT GAS BLOWING AND METHOD OF MANUFACTURING THE SAME}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a silicon substrate manufacturing apparatus and a method of manufacturing the same, and more particularly, to manufacturing a silicon substrate using inert gas blowing, which can contribute to high productivity and quality improvement by using continuous casting. An apparatus and a method of manufacturing the same.

Silicon substrates, a key component of silicon solar cells, account for about 28% of solar cell module prices.

Generally, a silicon substrate for a solar cell is manufactured by melting a silicon, solidifying the molten silicon to produce a single crystal silicon ingot or a polycrystalline silicon block, and then cutting through several times.

In the case of the silicon substrate manufacturing method, the silicon raw material loss is generated 40-50% by the cutting process, which is the main cause of the increase in manufacturing cost.

In order to fundamentally eliminate such a cutting loss, the technique of manufacturing a silicon substrate directly from a molten silicon is developed.

Direct manufacturing techniques of silicon substrates can be divided into vertical growth method and horizontal growth method. The vertical growth method is already under mass production, but has a disadvantage of slow growth. On the other hand, the horizontal growth method is not mass-produced despite the high growth rate.

In the case of the conventional horizontal growth method for direct silicon production, there is typically a ribbon growth on substrate (RGS) method. However, the RGS method controls the solidification inside the molten silicon storage container and has the following problems because the shape is controlled by using a blade.

First, in the case of the RGS method, the solidification is controlled inside the molten silicon storage container. In order to cause the solidification inside the container, the solidification time must be controlled to less than a millisecond (msec). If only a small amount of solidification time is passed, the solidified substrate may be caught in the blade, and the device itself may be damaged.

In addition, in order to uniformly solidify, the temperature of the silicon melt must be uniformly controlled over the entire substrate area. However, it is very difficult to uniformly control the temperature of the molten silicon melt.

In the case of the RGS method, a blade is used to control the shape of the substrate. In this case, there is a high probability that the blade is broken, and mechanical contact between the blade and the silicon substrate has a high possibility of causing contamination of the substrate.

SUMMARY OF THE INVENTION An object of the present invention is to provide a silicon substrate manufacturing apparatus using inert gas blowing, which can produce a silicon substrate directly from a molten silicon by using continuous casting, and can improve the surface quality of the silicon substrate to be manufactured.

Another object of the present invention is to provide a method for manufacturing a silicon substrate that can improve surface quality using inert gas blowing.

In order to achieve the above object, a silicon substrate manufacturing apparatus having excellent surface quality using an inert gas blowing according to the present invention includes a silicon raw material input part supplied with a silicon raw material; A silicon melting part mounted on a lower portion of the silicon raw material input part to melt the supplied silicon raw material to form a silicon melt; A silicon molten metal storage unit configured to receive the silicon molten metal from the silicon molten unit and to store the molten silicon, and then discharge the silicon molten metal into a melt having a predetermined thickness; A transfer unit for transferring the silicon melt discharged from the silicon melt storage unit; And a cooling unit cooling the silicon melt conveyed by the conveying unit, wherein the cooling unit cools the silicon melt in an inert gas blowing manner, and the inert gas blowing amount blown is 0.1 to ³ Nm ³ / h. do.

Method for producing a silicon substrate with excellent surface quality using an inert gas blowing in accordance with the present invention for achieving the above another object comprises the steps of: (a) charging a silicon raw material into the silicon melt; (b) melting a silicon raw material charged in the silicon melt to form a silicon melt; (c) opening the gate of the silicon melt to tap the silicon melt; (d) storing the hot melted silicon melt in a silicon melt storage unit; (e) driving the transfer unit to discharge the molten silicon; And (f) cooling by injecting an inert gas into the silicon melt conveyed by the transfer unit. In the step (f), the inert gas blowing amount is 0.1 to ³ Nm ³ / h. .

The silicon substrate manufacturing apparatus and its manufacturing method having excellent surface quality using the inert gas blowing according to the present invention can improve the quality of the silicon substrate manufactured by applying the inert gas blowing, while using a continuous casting method that is easy to control productivity and properties. Can be.

Therefore, a silicon substrate manufactured using a silicon substrate manufacturing apparatus having excellent surface quality using an inert gas blowing according to the present invention may have excellent surface quality, and thus is suitable for a solar cell substrate.

1 is a view schematically showing a silicon substrate manufacturing apparatus using an inert gas blowing according to an embodiment of the present invention.
2 is a flowchart illustrating a method of manufacturing a silicon substrate using inert gas blowing according to an embodiment of the present invention.
3 is a photograph showing a surface microstructure of a silicon substrate manufactured from a silicon substrate manufacturing apparatus using an inert gas blowing according to the present invention.
4 is a photograph showing a cross-sectional microstructure of the silicon substrate shown in FIG. 3.
5 is a photograph showing a surface of a silicon substrate prepared when no inert gas is applied.
Figure 6 is a photograph showing the surface of the silicon substrate prepared in the inert gas application.
FIG. 7 is a photograph showing the surface after polishing the surface of the silicon substrate shown in FIG. 6.

Advantages and features of the present invention and methods for achieving them will be apparent with reference to the examples described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the examples disclosed below, but may be implemented in various forms, and only the examples are intended to complete the disclosure of the present invention and those skilled in the art to which the present invention pertains. It is provided to fully inform the scope of the invention, and the invention is defined only by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

Hereinafter, a silicon substrate manufacturing apparatus having excellent surface quality using an inert gas blowing according to a preferred embodiment of the present invention and a manufacturing method thereof will be described in detail with reference to the accompanying drawings.

1 is a view schematically showing a silicon substrate manufacturing apparatus using an inert gas blowing according to an embodiment of the present invention.

Referring to FIG. 1, the silicon substrate manufacturing apparatus 100 using the illustrated inert gas blowing includes a silicon raw material input part 110, a silicon melt part 120, a silicon melt storage part 130, a transfer part 140, and cooling. The unit 150 is included.

The silicon raw material input unit 110 receives a silicon raw material from the outside and supplies a predetermined amount of silicon raw material to the inside of the silicon melting unit 120.

The silicon melter 120 melts the supplied silicon raw material to form a silicon melt. The silicon melter 120 may melt the silicon raw material in various ways such as an induction heating method and a resistance heating method. Hereinafter, the induction heating method will be described as an example.

In the case of silicon, unlike the metal, at a temperature of about 700 ° C. or less, the electrical conductivity is low, so that direct heating by electromagnetic induction is difficult. Therefore, the silicon raw material can be melted in an indirect melting method by crucible heat.

In the case of silicon melting by the indirect melting method, the crucible may be a graphite crucible. In the case of graphite, the crucible may be easily heated due to electromagnetic induction because the electrical conductivity and the thermal conductivity are very high. However, when silicon is indirectly melted by graphite crucible heat, there is a problem of contamination of silicon or the inner surface of the crucible.

Therefore, it is desirable to minimize the contamination problem of silicon by indirectly heating the silicon by crucible heat at a temperature of 700 ° C. or lower, and non-contact melting of the silicon raw material through induction melting at a temperature above that.

When the silicon raw material is melted by the induction melting method, the silicon melter 120 may be an induction melting apparatus including a crucible 121, an induction coil 122, a tap hole 123, and a gate 124.

The crucible 121 stores a silicon raw material, and a tap 123 is formed at the bottom thereof. The crucible 121 may be a graphite crucible or a water-cooled crucible, or a crucible of a combination thereof may be used.

Induction coil 122 is mounted to surround the outer wall of the crucible 121. Induction coil 122 is connected to an AC power source.

The gate 124 opens and closes the tapping hole 123 formed under the crucible 121. The gate 124 may be a bar type, but is not limited thereto, and a valve type may be used.

The silicon molten metal storage unit 130 receives and stores the molten silicon and then discharges the molten silicon into a melt having a predetermined thickness. The lower surface of the silicon melt storage unit 130 may be open. In this case, the transfer unit 140 disposed under the silicon melt storage unit 130 defines the lower surface of the silicon melt storage unit 130.

In addition, the molten silicon storage unit 130 has a discharge port 132 through which the molten silicon is discharged. The thickness of the discharge hole 132 may be one element that determines the thickness of the silicon substrate, and may be about 0.1 to 2 mm.

The transfer unit 140 is disposed under the silicon melt storage unit 130, and continuously transfers the silicon melt discharged from the silicon melt storage unit 130. The transfer unit 140 may be in the form of a transfer substrate, a conveyor belt type transfer device may be used.

When the transfer unit 140 is in the form of a transfer substrate, the transfer unit 140 may be formed of one substrate, and the transfer unit 140 may be separated into a lower substrate in contact with the transfer substrate responsible for transfer and the silicon melt and form the silicon substrate. have.

The transfer part 140 is preferably preheated by the preheater 142 in order to minimize the temperature difference with the molten silicon.

The transfer unit 140 is preferably formed of a material having a different coefficient of thermal expansion from silicon, such as C, SiC, Si ₃ N ₄ , graphite, Al ₂ O ₃ , Mo, and the like. When the thermal expansion coefficient of the transfer unit 140 is different from that of the silicon, the silicon substrate manufactured after cooling of the silicon melt may be easily separated from the transfer unit 140, and the transfer unit 140 may be reused.

The cooling unit 150 cools the transferred silicon melt to form a silicon substrate.

In the present invention, the cooling unit 150 may cool the silicon melt in an inert gas blowing method such as argon gas, helium gas, nitrogen gas, and the like. In this case, a single gas selected from argon gas, helium gas and nitrogen gas, or a mixed gas thereof may be used as the inert gas.

In the case of inert gas blowing, the silicon melt may be rapidly cooled to contribute to the removal of the remaining melt, and the surface shape of the silicon substrate manufactured through the surface planarization may be easily controlled.

At this time, the inert gas blowing amount may be carried out in 0.1 ~ 3 Nm ³ / h, more preferably 0.6 ~ 2.5 Nm ³ / h can be presented. If the blowing amount of the inert gas is less than 0.1 Nm ³ / h, there is a problem that the continuous casting is impossible because the thickness of the silicon substrate to be manufactured is not very effective because the blowing is not effective. On the contrary, when the amount of inert gas blown in excess of 3 Nm ³ / h, there is a problem that the silicon melt produced is thrown away and continuous silicon substrate production is impossible.

On the other hand, when using the silicon substrate manufacturing apparatus shown in Figure 1, the productivity and quality of the silicon substrate to be manufactured is large due to the surface temperature of the silicon melt stored in the silicon melt storage portion, the preheating temperature of the transfer portion, the moving speed of the transfer portion, etc. May be affected. These process variables affect the productivity of silicon substrates produced through a complex action rather than affecting each one alone.

That is, the surface temperature of the molten silicon is 1350 ~ 1500 ℃, the preheating temperature of the transfer unit 140 is 750 ~ 1400 ℃, the moving speed of the transfer unit 140 can be presented that 450 ~ 1400cm / min. In addition, it can be presented that the substrate transfer time after tapping from the molten silicon storage unit is 0.5 to 3.5 seconds.

If the surface temperature of the silicon melt stored in the silicon melt storage unit 130 is less than 1350 ° C., the silicon melt may harden before discharge. If the surface temperature of the silicon melt exceeds 1500 ° C., the transfer process may be performed after discharge. Problems with the flow of the silicon melt can occur.

In addition, when the preheating temperature of the transfer unit 140 is less than 750 ° C., the molten silicon may harden at a portion where the transfer unit 140 is in contact with the molten silicon. On the contrary, when the preheating temperature of the transfer unit 140 exceeds 1400 ° C., the silicon melt may flow down.

In addition, when the moving speed of the transfer unit 140 is less than 450cm / min, the thickness of the silicon substrate to be manufactured may be excessively thick. On the contrary, when the moving speed of the transfer unit 140 exceeds 1400 cm / min, there is a problem that the silicon substrate to be manufactured is too thin.

In addition, when the substrate transfer time after tapping from the molten silicon storage unit is less than 0.5 seconds, there is a problem that the silicon substrate to be manufactured becomes too thin. On the contrary, when the substrate transfer time after tapping from the molten silicon storage portion exceeds 3.5 seconds, the thickness of the silicon substrate to be manufactured becomes too thick, thereby making it impossible to continuously cast.

2 is a flowchart illustrating a method of manufacturing a silicon substrate using inert gas blowing according to an embodiment of the present invention.

Referring to Figure 2, the silicon substrate manufacturing method using the inert gas blowing shown in the transfer unit preheating step (S210), silicon raw material charging step (S220), silicon melt forming step (S230), gate opening step (S240), silicon melt The storage step (S250), the silicon melt discharge step (S260) and the silicon melt cooling step (S270).

In the transfer unit preheating step (S210), the transfer unit is preheated at one side of the lower portion of the molten silicon storage unit. At this time, the preheating temperature of the transfer unit is preferably carried out at 750 ~ 1400 ℃. If the preheating temperature of the transfer part is less than 750 ° C., the silicon melt may harden at the portion where the transfer part and the silicon melt come into contact with each other. On the contrary, when the preheating temperature of the transfer part exceeds 1400 ° C., a problem may occur in which the silicon melt flows down.

It is preferable that the transfer part has good wettability, has high corrosion resistance, and has a melting point higher than that of silicon. In addition, in order to easily separate the silicon substrate after cooling, it is preferable to use a material having a different thermal expansion coefficient from silicon. Specifically, the transfer unit may be formed of at least one material of C, SiC, Si ₃ N ₄ , graphite, Al ₂ O ₃ and Mo.

The transfer part preheating step (S210) is preferably such that preheating of the transfer part is completed before the gate opening step (S240) or the silicon melt storage step (S250). In this case, in the silicon substrate manufacturing method according to the present invention, it is not necessary to preheat the transfer part from the beginning, and may be selectively performed in various ways as necessary.

In the silicon raw material charging step (S220), a predetermined amount of silicon raw material is charged into the silicon melting unit through the silicon raw material input unit.

In the silicon molten metal forming step (S230), the silicon raw material charged into the silicon melt part is melted to form a silicon molten metal. Melting of the silicon raw material may be an induction melting method, and for this purpose, the silicon melting part stores the silicon raw material and has a tapping hole formed at the bottom thereof, an induction coil surrounding the crucible outer wall, and opening and closing the tapping hole. It may include a gate.

In the gate opening step S240, the gate is opened to tap the molten silicon melted by the silicon melter.

In the molten silicon storage step (S250), the molten silicon melted out from the molten silicon by the gate opening is stored. The surface temperature of the silicon melt in the silicon melt storage unit is preferably maintained to be 1350 ~ 1500 ℃. If the surface temperature of the silicon melt in the silicon molten metal storage unit is less than 1350 ° C., the molten silicon may harden before discharge. On the contrary, when the surface temperature of the silicon melt exceeds 1500 ° C., a problem may occur in which the silicon melt flows down during the discharging and transferring process.

In the silicon melt discharging step (S260), the transfer unit is driven in a horizontal direction to discharge the silicon melt through the discharge port.

At this time, the moving speed of the transfer unit is carried out at 450 ~ 1400 cm / min, the transfer time of the transfer unit after tapping from the molten silicon storage unit is preferably carried out in 0.5 ~ 3.5 seconds.

If the transfer speed is less than 450 cm / min, the thickness of the silicon substrate to be manufactured may be excessively thick. On the contrary, there is a problem in that the silicon substrate to be manufactured is too thin when the moving speed of the transfer portion exceeds 1400 cm / min.

In addition, when the transfer time of the transfer unit after tapping from the molten silicon storage unit is less than 0.5 seconds, there is a problem that the silicon substrate to be manufactured becomes too thin. On the contrary, when the transfer time of the transfer part after tapping from the molten silicon storage portion exceeds 3.5 seconds, the thickness of the silicon substrate to be manufactured becomes too thick, thereby making it impossible to continuously cast.

In the silicon melt cooling step (S270), the silicon melt transferred by the transfer unit is cooled to cast a silicon substrate.

At this time, the cooling of the silicon melt may be carried out by an inert gas blowing method, the inert gas may be representative of argon gas, but is not limited thereto, helium gas, nitrogen gas or the like may be used.

Here, the inert gas blowing amount may be performed at 0.1 to 3 Nm ³ / h, more preferably 0.6 to 2.5 Nm ³ / h can be presented. If the blowing amount of the inert gas is less than 0.1 Nm ³ / h, there is a problem that the continuous casting is impossible because the thickness of the silicon substrate to be manufactured is not very effective because the blowing is not effective. On the contrary, when the amount of inert gas blown in excess of 3 Nm ³ / h, there is a problem that the silicon melt produced is thrown away and continuous silicon substrate production is impossible.

As described above, the silicon substrate manufacturing method using the inert gas blowing according to the embodiment of the present invention may be terminated.

3 is a photograph showing a surface microstructure of a silicon substrate manufactured by a silicon substrate manufacturing method using an inert gas blowing according to the present invention, Figure 4 is a photograph showing a cross-sectional microstructure of the silicon substrate shown in FIG.

3 and 4, in the case of the silicon substrate to be manufactured, it can be seen that it has a polycrystalline structure, has an average crystal size of 50 to 100 μm, and has a vertically grown columnar structure. Such columnar structure has the advantage of increasing the lifetime of the minority carriers excited by sunlight, when the production of a solar cell, the battery efficiency can be improved.

On the other hand, Figure 5 is a photograph showing the surface of the silicon substrate prepared when the inert gas blowing is not applied. Figure 6 is a photograph showing the surface of the silicon substrate prepared in the inert gas blowing application.

Referring to FIG. 5, when inert gas blowing is not applied, the surface of the silicon substrate to be manufactured has a rugged surface.

The liquid phase density of silicon is approximately 2.57 g / cm ³ and the solid phase density of silicon is approximately 2.33 g / cm ³ . As a result of the lower solid phase density of silicon, the volume expands when the silicon is cooled from the liquid phase to the solid phase, and the surface becomes uneven as shown in FIG. Therefore, the surface quality of the silicon substrate to be produced is poor.

On the other hand, as shown in Figure 6, inert gas blowing, in particular argon gas blowing it can be seen that it has a much better surface quality compared to FIG.

7 is a photograph showing the surface after polishing the surface of the silicon substrate shown in FIG.

The silicon substrate for solar cells uses what has a thickness of 100-400 micrometers normally. Therefore, when the thickness of the silicon thin plate manufactured by the method shown in Figure 7 is also adjusted to 100 ~ 400㎛, it can be easily applied to the solar cell substrate.

Example

Hereinafter, the configuration and operation of the present invention through the preferred embodiment of the present invention will be described in more detail. It is to be understood, however, that the same is by way of illustration and example only and is not to be construed in a limiting sense.

Details that are not described herein will be omitted since those skilled in the art can sufficiently infer technically.

Table 1 measures and shows the thickness and shape of the silicon thin plate manufactured according to the conditions of Examples 1-4 and Comparative Example 1, respectively.

[Table 1]

Referring to Table 1, Examples 1 to 4 are to determine the thickness and shape of the thin plate manufactured according to the blowing amount of argon gas, which is an inert gas, and confirms that the thickness of the substrate decreases as the blowing amount of argon gas increases. It was.

However, as in Example 1, if the blowing amount of argon gas is 0.5 Nm ³ / h effective blowing is not effective, the thickness of the silicon substrate was very thick, and the blowing effect is more than the blowing amount of 0.65 Nm ³ / h or more And it was found.

In this case, even if the substrate is impossible to manufacture due to an inappropriate amount of inert gas blowing, continuous silicon substrate manufacturing may be possible by adjusting other variables such as the preheating temperature of the transfer unit, the moving speed of the transfer unit, and the transfer time of the substrate after tapping. .

On the other hand, when the argon gas blowing amount is too high as 3.0 Nm ³ / h as in Comparative Example 1, it can be seen that the substrate to be produced is not possible to manufacture a continuous silicon substrate.

Although the preferred embodiments of the present invention have been disclosed for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims. These changes and modifications may be made without departing from the scope of the present invention. Accordingly, the scope of the present invention should be determined by the following claims.

110: silicon raw material inlet 120: silicon melter
121: crucible 122: induction coil
123: door 124: gate
130: molten silicon storage unit 132: discharge port
140: transfer unit 142: pre-heating unit
150: cooling unit

Claims (13)

A silicon raw material input portion to which a silicon raw material is supplied;
A silicon melting part mounted on a lower portion of the silicon raw material input part to melt the supplied silicon raw material to form a silicon melt;
A silicon molten metal storage unit configured to receive the silicon molten metal from the silicon molten unit and to store the molten silicon, and then discharge the silicon molten metal into a melt having a predetermined thickness;
A transfer unit for transferring the silicon melt discharged from the silicon melt storage unit; And
Includes; Cooling unit for cooling the silicon melt conveyed by the transfer unit,
The cooling unit cools the silicon melt in an inert gas blowing method, but blown inert gas blowing amount is 0.6 ~ 2.5Nm ³ / h,
Preheating temperature of the transfer unit is 750 ~ 1400 ℃, the moving speed of the transfer unit is a silicon substrate manufacturing apparatus using an inert gas blowing, characterized in that 450 ~ 1400cm / min.
The method of claim 1,
The inert gas is
An apparatus for producing a silicon substrate using inert gas blowing, wherein any one or at least one mixed gas of argon gas, helium gas, and nitrogen gas is used.
The method of claim 1,
The silicon melt portion
A crucible for storing the silicon raw material and having a tapping hole formed at a lower portion thereof;
An induction coil surrounding the crucible outer wall,
Silicon substrate manufacturing apparatus using an inert gas blowing, characterized in that it comprises a gate for opening and closing the tap.
The method of claim 1,
Silicon substrate manufacturing apparatus using an inert gas blowing, characterized in that the surface temperature of the molten silicon stored in the molten silicon storage unit is 1350 ~ 1500 ℃.
delete The method of claim 1,
The transfer time of the transfer unit after tapping from the molten silicon storage unit is
Silicon substrate manufacturing apparatus using an inert gas blowing, characterized in that carried out in 0.5 to 3.5 seconds.
5. The method of claim 4,
The molten silicon storage unit
An apparatus for manufacturing a silicon substrate using inert gas blowing, characterized in that a discharge port through which the molten silicon is discharged is formed at one lower side.
In the method of manufacturing a silicon substrate using the apparatus according to claim 1,
(a) charging a silicon raw material into a silicon melt;
(b) melting a silicon raw material charged in the silicon melt to form a silicon melt;
(c) opening the gate of the silicon melt to tap the silicon melt;
(d) storing the hot melted silicon melt in a silicon melt storage unit;
(e) driving the transfer unit to discharge the molten silicon; And
(f) injecting and cooling an inert gas into the silicon melt conveyed by the conveying unit; and
Before the step (a), further comprising the step of preheating the transfer unit to 750 ~ 1400 ℃, in the step (e), the moving speed of the transfer unit is 450 ~ 1400cm / min,
In the step (f), the inert gas blowing amount is 0.6 ~ 2.5Nm ³ / h characterized in that the silicon substrate manufacturing method using inert gas blowing.
delete 9. The method of claim 8,
In the step (d)
The surface temperature of the silicon melt stored in the silicon melt storage unit is
Method for producing a silicon substrate using an inert gas blowing, characterized in that maintained at 1350 ~ 1500 ℃.
9. The method of claim 8,
In the step (f)
The inert gas is
A method for producing a silicon substrate using inert gas blowing, wherein any one or at least one mixed gas of argon gas, helium gas, and nitrogen gas is used.
9. The method of claim 8,
In the step (e)
Substrate transfer time after tapping is a silicon substrate manufacturing method using an inert gas blowing, characterized in that 0.5 to 3.5 seconds.
It is prepared by the method according to any one of claims 8, 10, 11 and 12,
Solar substrate silicon substrate having a thickness of 100 ~ 400㎛.

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