JPH0524981A - Manufacture of polycrystalline silicon sheet by cast ribbon method - Google Patents
Manufacture of polycrystalline silicon sheet by cast ribbon methodInfo
- Publication number
- JPH0524981A JPH0524981A JP20002591A JP20002591A JPH0524981A JP H0524981 A JPH0524981 A JP H0524981A JP 20002591 A JP20002591 A JP 20002591A JP 20002591 A JP20002591 A JP 20002591A JP H0524981 A JPH0524981 A JP H0524981A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- solidified
- mold nozzle
- molten silicon
- silicon sheet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 85
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 85
- 239000010703 silicon Substances 0.000 claims abstract description 85
- 238000005266 casting Methods 0.000 claims abstract description 31
- 238000002844 melting Methods 0.000 claims description 9
- 230000008018 melting Effects 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 238000003825 pressing Methods 0.000 claims description 3
- 238000007711 solidification Methods 0.000 claims description 3
- 230000008023 solidification Effects 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000005336 cracking Methods 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 6
- 239000000155 melt Substances 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は太陽電池その他の光電変
換素子等に用いられている、多結晶シリコンシートのキ
ャストリボン法による製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a polycrystalline silicon sheet, which is used in solar cells and other photoelectric conversion elements, by a cast ribbon method.
【０００２】[0002]
【従来の技術】既に多結晶シリコンシートの製造方法と
しては各種のものが実施されており、その一つであるリ
ボン法は図４のように、不活性ガス雰囲気内にあって坩
堝ａ内に存する溶融シリコンｂにダイｃを浸漬起立さ
せ、ダイｃの上端口ｃ′から引き出された溶融シリコン
ｂを、ダイｃの外である不活性ガス雰囲気内で冷却固化
させるようにしたもので、このリボン技術では、溶融シ
リコンｂのメニスカス（表面張力）を利用してシートを
形成しているため、均一な厚さの多結晶シリコンシート
を得難く、この結果太陽電池のディバイスとして用いよ
うとする際、これに電極を形成しようとしても、スクー
リン印刷法を適用することが困難となってしまう欠陥が
ある。2. Description of the Related Art Various methods have been already used for manufacturing a polycrystalline silicon sheet, and the ribbon method, which is one of them, is used in an inert gas atmosphere and in a crucible a as shown in FIG. The die c is immersed and erected in the existing molten silicon b, and the molten silicon b drawn out from the upper end opening c ′ of the die c is cooled and solidified in an inert gas atmosphere outside the die c. In the ribbon technology, since the sheet is formed by using the meniscus (surface tension) of the molten silicon b, it is difficult to obtain a polycrystalline silicon sheet having a uniform thickness, and as a result, when the sheet is used as a device for a solar cell. However, even if an electrode is formed on this, it is difficult to apply the screen printing method.
【０００３】また、上記の如く溶融シリコンとの濡れを
活用しようとするのがリボン技術であるため、ダイ、フ
ィラメント、基板など多くの消耗品を要することになる
だけでなく、濡れのよいカーボン、ＳｉＣ等を用いるこ
とから、これが溶融シリコンへの不純物源となってしま
う。さらに、当該リボン法によるときは結晶の成長が、
多結晶シリコンシートの引き出し方向への成長であり、
当該結晶の成長速度はあまり大きくできず、品質および
生産能率の点からも満足すべきものとなっていない。Further, since it is the ribbon technology that attempts to utilize the wettability with molten silicon as described above, not only a lot of consumables such as a die, a filament and a substrate are required, but also carbon having good wettability, Since SiC or the like is used, this becomes an impurity source to the molten silicon. Furthermore, when the ribbon method is used, crystal growth is
It is the growth of the polycrystalline silicon sheet in the pull-out direction,
The crystal growth rate cannot be increased so much, and it is not satisfactory in terms of quality and production efficiency.
【０００４】また、別途別謂キャスティング法（鋳造
法）なるものも実施されているが、同法ではシリコン母
材を加熱して融液となし、これを製品ウエハの寸法に応
じた鋳型に流し込み、さらに当該型の可動部分により融
液を押圧成型して固化させるものであるが、同法による
ときは、一度に所定形状のウエハが得られ、量産性の点
で望ましい結果が期待できるものの、上記のように融液
は四方から押えつけられることになる。このため同法で
は鋳型の上下面と側面が上記融液の固化に際し、シリコ
ン結晶粒（グレイン）の成長を抑制してしまうこととな
り、固化製品の前記各面と接する部分近傍が、非常に細
かい結晶粒となって大きな結晶粒が得られず、太陽電池
用シリコンウエハ等にあって望ましいとされている大結
晶粒生成の要請を満足させることができないため、当該
ウエハによって得られた太陽電池の光電変換効率も２〜
３％と極度に悪くなってしまう欠陥を持っている。Another so-called casting method (casting method) is also implemented separately. In this method, a silicon base material is heated to form a melt, which is poured into a mold according to the size of a product wafer. In addition, although the melt is pressed and solidified by the movable part of the mold to be solidified, a wafer having a predetermined shape can be obtained at a time by the same method, and a desirable result in terms of mass productivity can be expected, As described above, the melt will be pressed from all sides. Therefore, in the same method, the upper and lower surfaces and side surfaces of the mold suppress the growth of silicon crystal grains (grains) during solidification of the melt, and the vicinity of the portion contacting each surface of the solidified product is very fine. As a crystal grain, a large crystal grain cannot be obtained, and it is not possible to satisfy the demand for large crystal grain generation which is considered desirable in silicon wafers for solar cells and the like. The photoelectric conversion efficiency is also 2
It has a defect that it becomes extremely bad at 3%.
【０００５】そこで、本願人は既に上記難点を解消する
ため、前記キャスティング法の利点を活用し、溶融シリ
コンをモールドノズルに供給するが、不連続でなく連続
して供給すると共に、これをモールドノズル内にて固化
してしまい、この固化シリコンシートを連続的に引き出
すようにすることで、均一厚の多結晶シリコンシート
を、不純物による汚染の心配なしに量産可能とすると共
に、各種の厚さ寸法のものを容易に得られるようにし、
ディバイス加工の工程でも、厚さの均一化処理などを不
要となし、歩留りの向上をも図ろうとする方法を提案
（以下この方法をキャストリボン法と称す）した。Therefore, in order to solve the above-mentioned problems, the present applicant utilizes the advantages of the casting method and supplies molten silicon to the mold nozzle, but the molten silicon is supplied not continuously but continuously. By solidifying the solidified silicon sheet continuously and pulling out the solidified silicon sheet continuously, it is possible to mass-produce a polycrystalline silicon sheet with a uniform thickness without worrying about contamination by impurities and various thickness dimensions. Make it easy to get
Even in the device processing step, a method was proposed (hereinafter referred to as a cast ribbon method), which does not require a uniform thickness treatment and the like to improve the yield.
【０００６】この方法は図２に示す如き製造装置を用い
て行うもので、同図にあって１はアルゴン等の不活性ガ
スか真空による不活性雰囲気１ａをもつ炉体で、この中
にはヒータ２ａ、２ｂ等によって加熱されるシリコン溶
融管３と、ヒータ４によって加熱されるモールドノズル
５とが設けられており、シリコン溶融管３内に投入のシ
リコン母材は、前記ヒータ２ａによって溶融された後、
不活性ガス等による圧力Ｐを受けて、当該溶融シリコン
Ｓｉが、順次シリコン溶融管３の供給口３ａ、そしてモ
ールドノズル５の注入口５ａを介して当該モールドノズ
ル５内へ送り込まれるようになっている。This method is carried out by using a manufacturing apparatus as shown in FIG. 2. In the figure, reference numeral 1 denotes a furnace body having an inert gas 1a such as an inert gas such as argon or a vacuum. A silicon melting pipe 3 heated by the heaters 2a, 2b and the like and a mold nozzle 5 heated by the heater 4 are provided. The silicon base material charged into the silicon melting pipe 3 is melted by the heater 2a. After
Upon receiving the pressure P by an inert gas or the like, the molten silicon Si is sequentially fed into the mold nozzle 5 through the supply port 3a of the silicon melting pipe 3 and the injection port 5a of the mold nozzle 5. There is.
【０００７】ここでモールドノズル５は、ノズル下板５
ｂとノズル上蓋板５ｃとからなり、その下面に所定の凹
溝５ｄが形成されてあることで、図示されていないビス
等により両板５ｂ、５ｃを重積状態にて固定し、これに
より、所定厚さと所定幅の横向鋳造路６が形成され、図
中７が引出手段としての引き出し治具を示している。Here, the mold nozzle 5 is the nozzle lower plate 5
b and the nozzle upper cover plate 5c, and the predetermined groove 5d is formed on the lower surface thereof, so that both plates 5b and 5c are fixed in a stacked state by screws (not shown). A lateral casting path 6 having a predetermined thickness and a predetermined width is formed, and reference numeral 7 in the drawing denotes a drawing jig as a drawing means.
【０００８】この鋳造装置を用いて上記キャストリボン
法を実施するには、石英等により形成したシリコン溶融
管３中にシリコン母材を投入しておき、これをヒータ２
ａの稼動によって溶融（１４５０℃）し、前記不活性ガ
スによる圧力Ｐ（０．０１〜０．１ｋｇ／ｃｍ2 ）を当
該溶融シリコンＳｉの上面に加えるが、この際ヒータ４
によって予め同図に示す如くモールドノズル５の基部側
から横向鋳造路６、引出端口５ｅの方向へ向けて、シリ
コンの融点（ＭＰ＝１４２０℃）よりも高温から１３０
０℃程度に至るまで、降温状態となるような温度分布を
与えておき、当該横向鋳造路６の引出端口５ｅ寄りの固
化領域５ｆから引き出し治具７に向けては、融点ＭＰよ
りも予め温度が低くなるようにしてあり、このような温
度条件下のモールドノズル５内へその注入口５ａから連
続的に、上記溶融シリコンＳｉを供給するようにしてい
る。これにより当該溶融シリコンＳｉは、引き出し治具
７の握持用端口７ａからモールドノズル５内の固化領域
５ｆまでが固結することで、固化シリコンシートＭＳｉ
が形成されることとなる。In order to carry out the cast ribbon method using this casting apparatus, a silicon base material is placed in a silicon melting tube 3 made of quartz or the like, and the heater 2 is used.
It is melted (1450 ° C.) by the operation of a and a pressure P (0.01 to 0.1 kg / cm 2 ) of the inert gas is applied to the upper surface of the molten silicon Si.
As shown in the same figure, from the base side of the mold nozzle 5 toward the sideways casting passage 6 and the drawing end port 5e, the temperature is higher than the melting point (MP = 1420 ° C.) of silicon from 130 ° C.
A temperature distribution is provided such that the temperature is lowered to about 0 ° C., and the temperature is higher than the melting point MP in advance from the solidification region 5f near the drawing end port 5e of the lateral casting passage 6 toward the drawing jig 7. The molten silicon Si is continuously supplied from the injection port 5a into the mold nozzle 5 under such temperature conditions. As a result, the molten silicon Si is solidified from the gripping end opening 7a of the drawing jig 7 to the solidified region 5f in the mold nozzle 5, thereby solidifying the silicon sheet MSi.
Will be formed.
【０００９】このようにして固化シリコンシートＭＳｉ
が形成されたならば、当該引き出し治具７をモールドノ
ズル５の長手方向である矢印Ｄへ向け連続的に引出すの
であるが、この際溶融シリコンＳｉに加える圧力Ｐは、
前掲当初圧力よりも降圧させた稼動圧力とすることで、
固化領域５ｆの長さが変化しないようにするのがよい。
ここで、実際上前記の凹溝５ｄを深さ０．５ｍｍ、幅を
２５ｍｍにて長さは２５０ｍｍ程度であり、モールドノ
ズルの材質としては、カーボンが用いられ、その本体表
面に窒化シリコンコーティングを施すか、Ｓｉ3 Ｎ4 と
ＳｉＯ2 の混合物コーティング等の離型材を施して用い
られる。In this way, the solidified silicon sheet MSi
When the above is formed, the drawing jig 7 is continuously drawn toward the arrow D which is the longitudinal direction of the mold nozzle 5, and the pressure P applied to the molten silicon Si at this time is
By making the operating pressure lower than the initial pressure mentioned above,
It is preferable that the length of the solidified region 5f does not change.
Here, in practice, the concave groove 5d has a depth of 0.5 mm, a width of 25 mm and a length of about 250 mm. Carbon is used as the material of the mold nozzle, and a silicon nitride coating is applied to the surface of the main body. It is applied or a release agent such as a mixture coating of Si 3 N 4 and SiO 2 is applied.
【００１０】[0010]
【発明が解決しようとする課題】しかし、上記の従来法
にあっては、モールドノズル５における横向鋳造路６の
上面と下面とが平坦に形成されており、この結果固化シ
リコンシートＭＳｉを引き出し治具７によって引き出す
際、当該上面と下面とは、固化シリコンシートＭＳｉと
全面的に接触していることから、可成りの摩擦抵抗を受
けることとなり、この結果大きな引張り力を必要とする
ことになって、固化シリコンシートＭＳｉに割れが生じ
たり、破損してしまうことがあり、かつ、固化シリコン
シートＭＳｉの摺接により、モールドノズル５に施して
ある前記のコーティングが早期に損耗し、その寿命が短
くなってしまう等の問題がある。However, in the above-mentioned conventional method, the upper surface and the lower surface of the lateral casting passage 6 in the mold nozzle 5 are formed flat, and as a result, the solidified silicon sheet MSi is pulled out and cured. When pulled out by the tool 7, since the upper surface and the lower surface are in full contact with the solidified silicon sheet MSi, they are subject to considerable frictional resistance, and as a result, a large pulling force is required. As a result, the solidified silicon sheet MSi may be cracked or damaged, and due to the sliding contact of the solidified silicon sheet MSi, the above-mentioned coating applied to the mold nozzle 5 is worn out at an early stage and the life thereof is shortened. There are problems such as shortening.
【００１１】本発明は上記従来のキャストリボン法がも
つ難点に鑑み、モールドノズルの横向鋳造路に予め凹溝
条を所要複数だけ形成することで、固化シリコンシート
と横向鋳造路との接触面積を削減し、これによって、引
き出し治具による引張り力を小さくすることで、従来方
法の前記欠陥を解消するのが第１の目的である。さら
に、当該凹溝条の幅長を横向鋳造路の厚さよりも小さく
しておくことで、この凹溝条内に溶融シリコンが流入し
てしまうことのないようにして、固化シリコンシートに
よる製品の表面に凹凸が形成されるといったことのない
ようにしようとするのが、第２の目的である。In view of the drawbacks of the above-mentioned conventional cast ribbon method, the present invention forms a predetermined number of concave groove lines in the lateral casting passage of the mold nozzle in advance so that the contact area between the solidified silicon sheet and the lateral casting passage is increased. The first purpose is to eliminate the above-mentioned defects in the conventional method by reducing the tensile force by the drawing jig and thereby reducing the tensile force. Further, by setting the width of the groove groove to be smaller than the thickness of the lateral casting path, it is possible to prevent molten silicon from flowing into the groove groove, so that a product made of a solidified silicon sheet The second purpose is to prevent unevenness from being formed on the surface.
【００１２】[0012]
【課題を解決するための手段】本発明は所期の目的を達
成するため、不活性雰囲気内にあって、シリコン母材を
溶融した後、当該溶融シリコンに圧力をかけることで、
これを加温されたモールドノズル内へ連続して送出する
ことにより、当該溶融シリコンを、モールドノズルの引
出端口に当接させてある引き出し治具の握持用端口内ま
で流入させた後、当該握持用端口内からモールドノズル
の引出端口寄り部分における溶融シリコンまでが固結さ
れた時点で、前記溶融シリコンに圧力をかけながら、上
記の引き出し治具を連続して引出することにより、上記
モールドノズル内で固結した固化シリコンシートを、前
記の引出端口から連続して引き出すようにしたキャスト
リボン法において、上記のモールドノズル内における横
向鋳造路の上面と下面の一方または双方に、固化シリコ
ンシートの引き出し方向に沿って複数の凹溝条を形成し
ておき、当該凹溝条の幅長を横向鋳造路の厚さよりも小
さくすることで、これに溶融シリコンが流入しない状態
を保持しながら、固化シリコンシートを上記凹溝条の凹
設により形成された残置条面とのみ摺接させて前記引き
出し治具による引き出しが行われるようにしたことを特
徴とするキャストリボン法による多結晶シリコンシート
の製造方法を提供しようとしている。In order to achieve the intended object of the present invention, by melting a silicon base material in an inert atmosphere and then applying pressure to the molten silicon,
By continuously feeding this into the heated mold nozzle, the molten silicon is flown into the gripping end opening of the drawing jig that is in contact with the drawing end opening of the mold nozzle. At the time when the molten silicon is solidified from the inside of the gripping end port to the part near the extraction end port of the mold nozzle, the mold is obtained by continuously pulling out the drawing jig while applying pressure to the molten silicon. The solidified silicon sheet solidified in the nozzle, in the cast ribbon method so as to be continuously drawn out from the draw-out end port, one or both of the upper surface and the lower surface of the horizontal casting path in the mold nozzle, the solidified silicon sheet By forming a plurality of grooved grooves along the drawing direction of, by making the width of the grooved groove smaller than the thickness of the lateral casting path, While holding the state where molten silicon does not flow into it, the solidified silicon sheet is slid only in contact with the remaining strip surface formed by the recess of the recess groove, and the pull-out is performed by the pull-out jig. The present invention aims to provide a method for producing a polycrystalline silicon sheet by the cast ribbon method, which is characterized by:
【００１３】[0013]
【作用】キャストリボン法により加圧供給された溶融シ
リコンが、モールドノズルから握持用端口内まで流入
し、次いで、溶融シリコンの先端側が固化シリコンシー
トとして固化したところで、引出し治具を引き出すこと
となるが、この際、モールドノズルの横向鋳造路に設け
た凹条溝の幅長が、当該横向鋳造路の厚さよりも小さく
形成してあることで、固化シリコンシートよりも基端側
の溶融シリコンは、当該凹溝条に流入することなく、こ
のため溶融シリコンの表面は平坦状態を保持している。[Function] The molten silicon that is pressurized and supplied by the cast ribbon method flows from the mold nozzle into the holding end opening, and when the tip side of the molten silicon solidifies as a solidified silicon sheet, the withdrawal jig is pulled out. However, at this time, the width of the groove groove provided in the lateral casting passage of the mold nozzle is formed to be smaller than the thickness of the lateral casting passage, so that the molten silicon on the base end side of the solidified silicon sheet is Does not flow into the concave groove, and therefore the surface of the molten silicon maintains a flat state.
【００１４】そして、固化シリコンシートは引き出され
ることにより、もちろん凹溝条とは摺接せず、凹溝条の
凹設により形成された残置条面とだけ接触することとな
るから、固化シリコンシートの引張りに際しての接触抵
抗が削減され、小さな引張り力によって固化シリコンシ
ートを引き出すことができる。When the solidified silicon sheet is pulled out, the solidified silicon sheet does not come into sliding contact with the concave groove, but only comes into contact with the surface of the remaining groove formed by the concave groove. The contact resistance at the time of pulling is reduced, and the solidified silicon sheet can be pulled out by a small pulling force.
【００１５】[0015]
【実施例】本発明に係る方法を、図１の（Ａ）（Ｂ）に
示す製造装置を用いて実施する場合につき詳記すれば、
当該装置としては図２によって既に明示したものと略同
一構成のものを使用することができ、本発明に係る製造
装置にあっても、同一部材については同一符号をもって
示されており、相違する点は、モールドノズル５内にお
ける横向鋳造路６の上面６ａと下面６ｂの一方または双
方に、固化シリコンシートＭＳｉの引き出し方向に沿っ
て、所要複数の凹溝条６ｃ、６ｄを形成しておくのであ
り、図示例では凹溝条６ｃ、６ｄが互いに食い違いの配
置で凹設されており、従って、凹溝条６ｃの直下には、
凹溝条６ｄの凹設で形成された下面６ｂの残置条面６ｅ
が設けられ、凹溝条６ｄのの直上には、凹溝条６ｃの凹
設で形成された上面６ａの残置条面６ｆが設けられてい
る。EXAMPLE The method according to the present invention will be described in detail with reference to the case where the manufacturing apparatus shown in FIGS. 1 (A) and 1 (B) is used.
As the device, a device having substantially the same configuration as that already shown in FIG. 2 can be used. Even in the manufacturing device according to the present invention, the same members are denoted by the same reference numerals, and different points. In the mold nozzle 5, a plurality of required groove grooves 6c and 6d are formed on one or both of the upper surface 6a and the lower surface 6b of the lateral casting path 6 along the pulling direction of the solidified silicon sheet MSi. In the illustrated example, the recessed groove strips 6c and 6d are provided in a recessed manner so that they are staggered from each other. Therefore, immediately below the recessed groove strips 6c,
Remaining striation surface 6e of lower surface 6b formed by recessing groove 6d
Immediately above the grooved groove 6d, there is provided a residual grooved surface 6f of the upper surface 6a formed by the grooved groove 6c.
【００１６】そこで、本発明のキャストリボン法におい
ても、炉体１内の不活性雰囲気１ａ内にあって、シリコ
ン母材を溶融した後、シリコン溶融管３内の当該シリコ
ンＳｉに圧力をかけることで、これを熱源４によって加
温されたモールドノズル５内へ連続して送出ことによ
り、この溶融シリコンＳｉを、モールドノズル５の引出
端口５ｅに当接させてある引き出し治具７の握持用端口
７ａ内まで流入させるのであり、さらに、当該握持用端
口７ａ内から、モールドノズル５の引出端口５ｅ寄り部
分における溶融シリコンまでが固結された時点で、前記
溶融シリコンＳｉに圧力Ｐをかけながら、上記の引出し
治具７を連続して矢印Ｄ方向へ引出すことにより、上記
モールドノズル５内で固結した固化シリコンシートＭＳ
ｉを、前記の引出端口５ｅから引き出すこととなる。Therefore, also in the cast ribbon method of the present invention, after the silicon base material is melted in the inert atmosphere 1a in the furnace body 1, pressure is applied to the silicon Si in the silicon melting pipe 3. Then, by continuously feeding this into the mold nozzle 5 heated by the heat source 4, the molten silicon Si is held by the drawing end port 5e of the mold nozzle 5 for gripping the drawing jig 7. The molten silicon Si is caused to flow into the end opening 7a. Further, when the molten silicon is solidified from the inside of the gripping end opening 7a to the molten silicon in the portion of the mold nozzle 5 close to the drawing end opening 5e, a pressure P is applied to the molten silicon Si. Meanwhile, the solidified silicon sheet MS solidified in the mold nozzle 5 by continuously drawing out the drawing jig 7 in the direction of the arrow D
i will be pulled out from the pull-out end port 5e.
【００１７】ここで、本発明ではモールドノズル５に設
けた凹溝条６ｃ、６ｄにつき、その幅長ｔを横向鋳造路
６の厚さＴよりも小さく形成してあり、このようにする
ことで、当該横向鋳造路６に流入して来た溶融シリコン
Ｓｉが凹溝条６ｃ、６ｄに流入してしまうことなく、従
って、横向鋳造路６としてのキャビティ表面には凹凸が
存するにも拘らず溶融シリコンＳｉの表面は平坦な状態
を保有し得る。ここで、凹溝条６ｃ、６ｄの溝深につい
ては、モールドノズル５の強度が所要程度以上に小さく
ならない限り特に規制はなく、一具体例を示せば、Ｔ＝
０．５ｍｍ、ｔ＝０．３ｍｍ、溝深０．１ｍｍ、溝ピッ
チＰ＝０．６ｍｍであり、また、凹溝条６ｃ、６ｄは横
向鋳造路６の長手方向全長にわたって凹設しても、部分
的な形成でも、分断状に設けるようにしてもよい。Here, in the present invention, the width t of each of the grooved grooves 6c and 6d provided in the mold nozzle 5 is formed to be smaller than the thickness T of the lateral casting passage 6, and by doing so. The molten silicon Si that has flowed into the horizontal casting passage 6 does not flow into the concave groove lines 6c and 6d, and thus the molten silicon Si melts in spite of the unevenness on the cavity surface of the horizontal casting passage 6. The surface of silicon Si can maintain a flat state. Here, the groove depths of the concave groove stripes 6c and 6d are not particularly limited unless the strength of the mold nozzle 5 becomes smaller than necessary, and if one specific example is given, T =
0.5 mm, t = 0.3 mm, groove depth 0.1 mm, groove pitch P = 0.6 mm, and even if the groove grooves 6c and 6d are recessed over the entire length of the lateral casting path 6 in the longitudinal direction, It may be formed partially or dividedly.
【００１８】上記の如きモールドノズル５を用いること
により、前記のようにして溶融シリコンＳｉが横向鋳造
路６内から引き出し治具７に流入し、固化シリコンシー
トＭＳｉを形成後、引き出し治具７を引張ることとなる
が、この際、固化シリコンシートＭＳｉは凹溝条６ｃ、
６ｄと当接せず、残置条面６ｅ、６ｆと摺接されること
となるから、両者の接触面積が従来例に比し大幅に削減
され、この結果摺動に際しての摩擦力が小さくなり、引
き出し治具７による引張り力が小であっても、充分に引
き出せることとなって、製品である固化シリコンシート
ＭＳｉの損傷問題が改善される。By using the mold nozzle 5 as described above, the molten silicon Si flows from the lateral casting path 6 into the drawing jig 7 as described above, and after the solidified silicon sheet MSi is formed, the drawing jig 7 is removed. In this case, the solidified silicon sheet MSi is pulled by the groove 6c,
Since it is not in contact with 6d but is in sliding contact with the remaining strip surfaces 6e, 6f, the contact area between the two is greatly reduced compared to the conventional example, and as a result, the frictional force during sliding is reduced, Even if the pulling force by the pull-out jig 7 is small, it can be sufficiently pulled out, and the problem of damage to the solidified silicon sheet MSi, which is the product, is improved.
【００１９】[0019]
【発明の効果】本発明は以上のようにして実施できるも
のであるから、キャストリボン法の実施に際し、モール
ドノズルの横向鋳造路に凹溝条を適切に凹設しておくこ
とによって、製品表面の平滑性を阻害することなしに、
引張力を低減することができ、このことによって、製品
の割れなどによる損傷発生率を大幅に低減でき、また、
モールドノズルに施したコーティングの寿命をも延ばす
ことが可能となる。EFFECTS OF THE INVENTION Since the present invention can be carried out as described above, when the cast ribbon method is carried out, a groove groove is appropriately provided in the lateral casting path of the mold nozzle to provide a product surface. Without disturbing the smoothness of
It is possible to reduce the tensile force, which greatly reduces the incidence of damage due to product cracking, etc.
It is possible to extend the life of the coating applied to the mold nozzle.
【図１】（Ａ）は本発明に係る方法を実施するのに用い
られる製造装置の縦断正面説明図で、（Ｂ）は（Ａ）の
Ｂ−Ｂ線拡大断面図である。1A is a vertical cross-sectional front view of a manufacturing apparatus used to carry out a method according to the present invention, and FIG. 1B is an enlarged cross-sectional view taken along line BB of FIG.
【図２】従来のキャストリボン法の実施に用いられる製
造装置の縦断正面説明図である。FIG. 2 is a vertical sectional front view of a manufacturing apparatus used for carrying out a conventional cast ribbon method.
【図３】図２の III−III 線拡大断面図である。FIG. 3 is an enlarged sectional view taken along line III-III in FIG.
【図４】従来のリボン法による多結晶シリコンシート製
造装置を示す縦断正面説明図である。FIG. 4 is a vertical sectional front view showing a conventional polycrystalline silicon sheet manufacturing apparatus by a ribbon method.
１ａ 不活性雰囲気 ５ モールドノズル ５ｅ 引出端口 ６ 横向鋳造路 ６ａ 上面 ６ｂ 下面 ６ｃ 凹溝条 ６ｄ 凹溝条 ６ｅ 残置条面 ６ｆ 残置条面 ７ 引き出し治具 ７ａ 握持用端口 ＭＳｉ 固化シリコンシート Ｐ 圧力 Ｓｉ 溶融シリコン ｔ 凹溝条の幅長 Ｔ 横向鋳造路の厚さ 1a Inert atmosphere 5 Mold nozzle 5e Draw-out end 6 Lateral casting path 6a Upper surface 6b Lower surface 6c Recessed groove 6d Recessed groove 6e Remaining grooved surface 6f Remaining grooved surface 7 Drawer jig 7a Holding edge MSi Solidified silicon sheet P Pressure Si Molten silicon t Width of concave groove T Thickness of lateral casting path
───────────────────────────────────────────────────── フロントページの続き (72)発明者 鈴木 智哉 札幌市白石区菊水５条２丁目３番17号 株 式会社ほくさんほくさん研究所内 (72)発明者 森谷 敏明 札幌市白石区菊水５条２丁目３番17号 株 式会社ほくさんほくさん研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Tomoya Suzuki 5-3, 3 Kikusui, Shiroishi-ku, Sapporo City Hokusan Hokusan Research Laboratory Co., Ltd. (72) Inventor Toshiaki Moritani 5-2, Kikusui, Shiroishi-ku, Sapporo No. 3-17 Stock Company Hokusan Hokusan Research Center
Claims (1)
を溶融した後、当該溶融シリコンに圧力をかけること
で、これを加温されたモールドノズル内へ連続して送出
することにより、当該溶融シリコンを、モールドノズル
の引出端口に当接させてある引き出し治具の握持用端口
内まで流入させた後、当該握持用端口内からモールドノ
ズルの引出端口寄り部分における溶融シリコンまでが固
結された時点で、前記溶融シリコンに圧力をかけなが
ら、上記の引き出し治具を連続して引出することによ
り、上記モールドノズル内で固結した固化シリコンシー
トを、前記の引出端口から連続して引き出すようにした
キャストリボン法において、上記のモールドノズル内に
おける横向鋳造路の上面と下面の一方または双方に、固
化シリコンシートの引き出し方向に沿って複数の凹溝条
を形成しておき、当該凹溝条の幅長を横向鋳造路の厚さ
よりも小さくすることで、これに溶融シリコンが流入し
ない状態を保持しながら、固化シリコンシートを上記凹
溝条の凹設により形成された残置条面とのみ摺接させて
前記引き出し治具による引き出しが行われるようにした
ことを特徴とするキャストリボン法による多結晶シリコ
ンシートの製造方法。Claim: What is claimed is: 1. In an inert atmosphere, after melting a silicon base material, pressure is applied to the molten silicon so that the molten silicon is continuously introduced into a heated mold nozzle. By sending out the molten silicon to the inside of the gripping end of the drawing jig that is in contact with the drawing end of the mold nozzle, the portion near the drawing end of the mold nozzle from the inside of the gripping end. At the time when the molten silicon up to is solidified, the solidified silicon sheet solidified in the mold nozzle is continuously pulled out by continuously pulling out the drawing jig while applying pressure to the molten silicon. In the cast ribbon method in which the continuous drawing is performed from the drawing end port, the solidification coating is applied to one or both of the upper surface and the lower surface of the horizontal casting passage in the mold nozzle. By forming a plurality of recessed grooves along the direction of pulling out the consheet and making the width of the recessed grooves smaller than the thickness of the lateral casting path, a state in which molten silicon does not flow into this is maintained. However, the polycrystalline silicon by the cast ribbon method is characterized in that the solidified silicon sheet is brought into sliding contact only with the remaining strip surface formed by the recessed formation of the recessed groove strips so as to be pulled out by the pulling jig. Sheet manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03200025A JP3087188B2 (en) | 1991-07-15 | 1991-07-15 | Method for producing polycrystalline silicon sheet by cast ribbon method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03200025A JP3087188B2 (en) | 1991-07-15 | 1991-07-15 | Method for producing polycrystalline silicon sheet by cast ribbon method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0524981A true JPH0524981A (en) | 1993-02-02 |
| JP3087188B2 JP3087188B2 (en) | 2000-09-11 |
Family
ID=16417565
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP03200025A Expired - Fee Related JP3087188B2 (en) | 1991-07-15 | 1991-07-15 | Method for producing polycrystalline silicon sheet by cast ribbon method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3087188B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL1030285C2 (en) * | 2005-10-27 | 2007-05-01 | Rgs Dev B V | Method and device for manufacturing metal foils with a pattern. |
| KR100967519B1 (en) * | 2008-05-09 | 2010-07-07 | 고려대학교 산학협력단 | Method for manufacturing silicon ribbon and silicon ribbon using the same |
| KR101502535B1 (en) * | 2008-10-21 | 2015-03-13 | 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. | Removal of a sheet from a production apparatus |
-
1991
- 1991-07-15 JP JP03200025A patent/JP3087188B2/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL1030285C2 (en) * | 2005-10-27 | 2007-05-01 | Rgs Dev B V | Method and device for manufacturing metal foils with a pattern. |
| WO2007049964A1 (en) * | 2005-10-27 | 2007-05-03 | Rgs Development B.V. | Method and device for producing metal panels with a pattern |
| US8225480B2 (en) | 2005-10-27 | 2012-07-24 | Rgs Development B.V. | Method and device for producing metal panels with a pattern |
| KR100967519B1 (en) * | 2008-05-09 | 2010-07-07 | 고려대학교 산학협력단 | Method for manufacturing silicon ribbon and silicon ribbon using the same |
| KR101502535B1 (en) * | 2008-10-21 | 2015-03-13 | 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. | Removal of a sheet from a production apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3087188B2 (en) | 2000-09-11 |
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