KR20100107905A - Reram device and method for manufacturing the same - Google Patents

Abstract

PURPOSE: A ReRAM device and a manufacturing method thereof are provided to improve the interfacial property and memory property of a ReRAM device by forming a second electrode layer pattern after forming an adhesive patter between the second electrode pattern and a metal oxide layer. CONSTITUTION: A substrate(100) comprises a substrate insulating layer(120) and a substrate body layer(110). A first electrode layer(200) is formed on the substrate. A metal oxide layer(300) is formed on the first electrode layer. A self-assembled monolayer, which includes an aperture pattern exposing the metal oxide layer, is formed on the metal oxide layer. A second electrode layer pattern(500) is formed on the metal oxide layer.

Description

RJRM element and method of manufacturing the same {ReRAM DEVICE AND METHOD FOR MANUFACTURING THE SAME}

The present invention relates to a method of manufacturing a ReRAM device and a ReRAM device manufactured by the method, and specifically, to a method of manufacturing a ReRAM device comprising selectively forming an electrode layer using a pattern of a self-assembled monolayer, and the It relates to a ReRAM device comprising an electrode layer formed as follows.

Due to the rapid development of the mobile and digital information communication and home appliance industries, the study of memory devices based on the charge control of the existing electrons is expected to reach a limit, and the new functional memory of the new concept rather than the concept of the existing electronic charge device Device development is required. In particular, in order to meet the demand for large memory capacity of major information devices, it is necessary to develop next-generation large-capacity ultra-high speed and ultra-low power memory devices.

In recent years, as mobile digital devices such as mobile phones, PDAs, notebooks, etc. have become thin and small and highly integrated, resistance random access memory (ReRAM), which is a resistance change memory capable of higher integration than a conventional RAM device, is simply referred to as 'ReRAM'. Device has been developed. Such a ReRAM device is attracting attention as a next generation nonvolatile memory RAM device capable of having sufficient device operation margin even in low voltage operation.

 ReRAM can involve more than 1000 times the resistance change when the input pulse is applied (excellent operating margin), high speed operation of about 10 to 20 ns (fast speed), high integration (miniaturization, high integration). In addition, conventional CMOS processes and semiconductor integrated process technologies may be used to manufacture ReRAM devices.

In contrast, other nonvolatile memory devices have limitations of scale down (flash memory), material stability problems (FRAM), slow speeds and large power consumption (flash memory), complex processes and multilayers, and small read / write margins (MRAM). ) Has limitations.

On the other hand, Korean Patent Registration No. 841170 discloses a conventional invention using a conventional integrated circuit manufacturing process, 'a method of forming a low resistance metal wiring, a metal wiring structure and a display device using the same'.

The prior art discloses a technique for forming an integrated circuit by removing a mask pattern using a lift off process. The lift-off process is used to pattern a conductive material such as platinum (Pt), which is difficult to etch, but the interface state between the patterned conductive material and the insulating material on which the conductive material is formed may become unstable by the lift-off process. There is a problem.

Pt, which is mostly used as an upper electrode of a memory device, is widely used even though it has a higher resistance than other metals because it is a stable metal that is less reactive with external factors such as O 2. However, since it is difficult to etch Pt, a pattern must be formed by a lift-off method. When manufacturing a memory device such as a ReRAM device by using the lift-off process, the metal layer and the metal oxide included in the memory device such as the ReRAM device Since the interface state between layers is unstable and Pt has poor adhesion, unnecessary current loss may occur in a ReRAM device.

The present invention is to solve the above problems of the prior art, a method of manufacturing a ReRAM device for improving the interface state and memory characteristics between the electrode layer and the metal oxide layer in the ReRAM device and a ReRAM device manufactured by such a manufacturing method It aims to provide.

As a technical means for achieving the above technical problem, a first aspect of the present invention, forming a first electrode layer on a substrate, forming a metal oxide layer on the first electrode layer, on the metal oxide layer Forming a hydrophobic self-assembled monomolecular layer comprising an opening pattern exposing the metal oxide layer, and using the hydrophobic self-assembled monolayer as a mask to form a second electrode layer pattern on the metal oxide layer through the opening pattern. It provides a method of manufacturing a ReRAM device, comprising the step of forming.

In one embodiment of the present invention, the step of forming the hydrophobic self-assembled monolayer on the metal oxide layer is performed by a micro-contact printing method (micro-contact printing method). Specifically, a stamp having a negative pattern corresponding to the opening pattern is provided, the hydrophobic self-assembled monolayer is formed on the stamp, and the stamp on which the hydrophobic self-assembled monolayer is formed is pressed onto the metal oxide layer. And printing the hydrophobic self-assembled monolayer to form the hydrophobic self-assembled monolayer on the metal oxide layer.

In another embodiment of the present invention, the second electrode layer may be formed on the metal oxide layer through the opening pattern by a chemical vapor deposition (CVD) method. Examples of the chemical vapor deposition method include APCVD (atmosphere pressure CVD), LPCVD (low pressure CVD), metal organic CVD (MOCVD), plasma enhanced CVD (PECVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD), and the like. Can be used, but is not limited thereto.

In another embodiment of the present invention, the first electrode layer and the second electrode layer are aluminum (Al), cobalt (Co), nickel (Ni), iron (Fe), tantalum (Ta), titanium (Ti), respectively , Gold (Au), silver (Ag) and platinum (Pt) may include one or more selected from the group consisting of, but is not limited thereto.

In another embodiment of the present invention, the metal oxide layer is, for example, made of titanium oxide (TiO₂), hafnium oxide (HfO₂), zirconium oxide (ZrO₂), nickel oxide (NiO) and alumina (Al₂O₃). It may include one or more selected from the group, but is not limited thereto.

In another embodiment of the present invention, the method may further include heat treating the metal oxide layer.

In another embodiment, the method may further include forming an adhesive layer pattern corresponding to the opening pattern between the metal oxide layer and the second electrode layer pattern by using the hydrophobic self-assembled monolayer as a mask. have.

The adhesive layer pattern may include a metal having a higher chemical affinity with the metal oxide layer than the second electrode layer pattern. The adhesive layer pattern is, for example, cobalt (Co), nickel (Ni), iron (Fe), chromium (Cr), silver (Ag), aluminum (Al), tin (Sn), tungsten (W), ruthenium (Ru), palladium (Pd), cadmium (Cd) and silicon (Si) may include one or more selected from the group consisting of, but is not limited thereto.

In addition, a second aspect of the present invention provides a ReRAM device comprising:

Board,

A first electrode layer formed on the substrate,

A metal oxide layer formed on the first electrode layer, and

A second electrode layer pattern formed on the metal oxide layer;

Provided is a ReRAM device manufactured by the method for manufacturing a ReRAM device according to the present invention described above.

In one embodiment of the invention, there is provided a ReRAM device comprising:

Board,

A first electrode layer formed on the substrate,

A metal oxide layer formed on the first electrode layer,

An adhesive layer pattern formed on the metal oxide layer, and

A second electrode layer pattern formed on the adhesive layer pattern;

Provided is a ReRAM device manufactured by the method for manufacturing a ReRAM device according to the present invention described above.

In one embodiment of the present invention, the adhesive layer pattern may include a metal having a higher chemical affinity with the metal oxide layer than the second electrode layer pattern.

The adhesive layer pattern is, for example, cobalt (Co), nickel (Ni), iron (Fe), chromium (Cr), silver (Ag), aluminum (Al), tin (Sn), tungsten (W), ruthenium (Ru), palladium (Pd), cadmium (Cd) and silicon (Si) may include one or more selected from the group consisting of, but is not limited thereto.

According to the present invention, the second electrode layer pattern can be easily formed by using a hydrophobic self-assembled monolayer as a mask and a hydrophobic self-assembled monolayer is used as a mask. By forming the second electrode layer pattern after forming the adhesive layer pattern therebetween, the interface characteristics and the memory characteristics of the ReRAM device can be improved. As a result, in the manufacture of the conventional ReRAM device, the interface between the metal layer and the metal oxide layer, which is a problem when the upper electrode layer such as Pt is manufactured by using a lift-off process, is unstable and the ReRAM is caused by poor adhesion of the upper electrode layer such as Pt. Problems such as unnecessary current loss of the device can be improved.

DETAILED DESCRIPTION Hereinafter, embodiments and embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.

Throughout this specification, when a member is located “on” with another member, this includes not only when one member is in contact with another member but also when another member exists between the two members. In addition, when a part is said to "include" a certain component, it means that it can further include other components, without excluding other components unless otherwise stated.

Hereinafter, a method of manufacturing a ReRAM device according to an exemplary embodiment of the present invention will be described with reference to FIGS. 1 to 6.

1 is a flowchart illustrating a method of manufacturing a ReRAM device according to an embodiment of the present invention, and FIGS. 2 to 6 are views illustrating a method of manufacturing a ReRAM device according to an embodiment of the present invention.

First, as shown in FIGS. 1 and 2, the first electrode layer 200 is formed on the substrate 100 (S110).

Specifically, the substrate may be a Si substrate, a silicon dioxide substrate or a polysilicon substrate, but is not limited thereto.

Depending on the type of substrate used, if necessary, the surface of the substrate is oxidized or nitrided to provide a substrate 100 including a substrate insulating layer 120 containing silicon oxide or silicon nitride and a substrate body layer 110. . A silicon (Si) substrate may be used as the substrate 100, and in this case, the substrate insulating layer 120 may be a silicon oxide layer (SiO₂).

Then, physical vapor deposition methods such as sputtering process, evaporation process, pulsed laser deposition (PLD) process or at least atmospheric pressure CVD (APCVD), low pressure CVD (LPCVD), metal organic CVD (MOCVD), The first electrode layer 200 is formed on the substrate 100 using a chemical vapor deposition method such as plasma enhanced CVD (PECVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD), or the like. Specifically, the first electrode layer 200 may include aluminum (Al), cobalt (Co), nickel (Ni), iron (Fe), tantalum (Ta), titanium (Ti), gold (Au), and silver (Ag). And platinum (Pt), but may be formed, but is not limited thereto. For example, the first electrode layer 200 may include platinum, which is chemically stable and has relatively higher electrical conductivity than other metals.

Next, the metal oxide layer 300 is formed on the first electrode layer 200 (S120).

Specifically, the metal oxide layer 300 is formed using, for example, a deposition method such as physical vapor deposition (PVD), chemical vapor deposition (CVD), pulse laser deposition (PLD), atomic layer deposition (ALD), or the like. Can be. In order to prevent contamination such as surface contamination, the metal oxide layer 300 is deposited in a vacuum atmosphere. The metal oxide layer 300 may include, for example, any one or more of titanium oxide (TiO₂), hafnium oxide (HfO₂), zirconium oxide (ZrO₂), nickel oxide (NiO), and alumina (Al₂O₃). Among them, preferably, titanium oxide may be included. The thickness of the metal oxide layer may be appropriately selected within a range for forming a ReRAM device, for example, may be about 10 to 1000 nm, but is not limited thereto.

Next, the method may further include heat treating the metal oxide layer 300.

Specifically, the metal oxide layer 300 is heat-treated for 1 minute to 24 hours at 100 to 1000 ℃ in a vacuum, oxygen atmosphere or nitrogen atmosphere. Due to the heat treatment, the molecules forming the metal oxide layer 300 are rearranged, and the lattice involved in the change of the electrical resistance is rearranged by the rearrangement of the molecules.

3 and 4, a hydrophobic self-assembled monolayer 700 is formed on the metal oxide layer 300 (S130).

The hydrophobic self-assembled monolayer 700 on the metal oxide layer 300 may be formed by a micro-contact printing method.

When the hydrophobic self-assembled monolayer layer 700 is formed on the metal oxide layer 300 by the micro-contact printing method, specifically, first, the hydrophobic self-assembled monolayer layer 700 to be formed on the metal oxide layer 300 later A stamp 1000 having an intaglio pattern 1100 corresponding to the opening pattern 710 of FIG. The stamp 1000 is not particularly limited as long as it is used in the micro-contact printing method. For example, the stamp 1000 may be manufactured by curing a poly dimethyl siloxane (PDMS) mixture, and the PDMS mixture may be a seal guard. A mixture of (sylgard) and a curing agent in a weight ratio of 10: 1 can be used. Next, the hydrophobic self-assembled monolayer 700 is formed on the surface of the stamp 1000 on which the intaglio pattern 1100 is formed. Specifically, the hydrophobic self-assembled monomolecular solution is applied to the surface of the stamp 1000 using a method such as spin coating.

Next, the stamp 1000 having the hydrophobic self-assembled monolayer 700 formed on the surface is pressed in the direction of the substrate 100 to print the hydrophobic self-assembled monolayer 700 on the metal oxide layer 300. When the hydrophobic self-assembled monolayer 700 is printed on the metal oxide layer 300 by the stamp 1000, the hydrophobic self-assembled monolayer formed on the intaglio pattern 1100 of the stamp 1000 is formed on the metal oxide layer 300. Because it is not printed on the hydrophobic self-assembled monolayer 700 includes an opening pattern 710 corresponding to the intaglio pattern 1100 of the stamp 1000, the opening pattern 710 is a metal oxide layer 300 Exposed. The opening pattern 710 may have an island shape in which neighboring opening patterns 710 are spaced apart from each other, and may be variously formed, such as a loop type, a closed loop type, and a polygon, as necessary. It can represent a form.

Since the hydrophobic self-assembled monolayer 700 formed on the metal oxide layer 300 by the printing process using the stamp 1000 has hydrophobic, at the time of forming the second electrode layer pattern 500 later, or In the process of forming the adhesive layer pattern 400 and the second electrode layer pattern 500, the adhesive layer pattern 400 and the second electrode layer pattern 500 do not deposit on the surface of the hydrophobic self-assembled monolayer. The hydrophobic self-assembled monolayer 700 is Perfluorodecyltrichlorosilane (PFS), Octacdecyltrichlorosilane (OTS), Octadecyltrimethoxysilane (OTMS), 1-Hexadecanethiol (HDT), Heptadecafluoro-1,1,2,2-tetrahydrodecyl) trichlorosilane (FDTS), FOTS (1H, 1H, 2H, 2H-perfluorodecyltrichlorosilane), pentafluorobenzenethiol (PFBT), and dichlorodimethylsilane (DDMS).

Next, a second electrode layer pattern 500 is formed on the metal oxide layer 300 (S140).

The second electrode layer pattern 500 uses, as a mask, a hydrophobic self-assembled monolayer 700 including the opening pattern 710 exposing the metal oxide layer 300 as a mask. opening of the hydrophobic self-assembled monolayer 700 using chemical vapor deposition methods such as low pressure CVD, metal organic CVD (MOCVD), plasma enhanced CVD (PECVD), atomic layer deposition (ALD), and plasma enhanced ALD (PEALD). The metal oxide layer 300 is formed on the pattern 710. When the second electrode layer pattern 500 is formed by using the opening pattern 710 of the hydrophobic self-assembled monolayer layer 700, the second electrode layer pattern 500 is hydrophobic because the hydrophobic self-assembled monolayer layer 700 has hydrophobicity. It is selectively deposited on the metal oxide layer 300 which is not formed on the self-assembled monolayer layer 700 and is formed to correspond to the opening pattern 710 of the hydrophobic self-assembled monolayer layer 700.

Specifically, the second electrode layer pattern 500 may include aluminum (Al), cobalt (Co), nickel (Ni), iron (Fe), tantalum (Ta), titanium (Ti), gold (Au), and silver (Ag). And it may include any one or more of platinum (Pt), it is preferable to include a platinum that is chemically stable and relatively high electrical conductivity compared to other metals.

Optionally, as shown in FIG. 6, the method may further include forming an adhesive layer pattern 400 before forming the second electrode layer on the metal oxide layer 300.

The adhesive layer pattern 400 has a higher chemical affinity with the metal oxide layer 300 than the second electrode layer pattern 500 to be formed on the adhesive layer pattern 400 later, and thus the metal oxide layer 300 and the second electrode layer pattern 500 ) To facilitate bonding between

Specifically, the process of forming the adhesive layer pattern 400 may include, for example, atmosphere pressure CVD (APCVD), low pressure CVD (LPCVD), metal organic CVD (MOCVD), plasma enhanced CVD (PECVD), and atomic layer deposition (ALD). ), Aluminum (Al), cobalt (Co) on the metal oxide layer 300 corresponding to the opening pattern 710 of the hydrophobic self-assembled monolayer 700 by using a chemical vapor deposition method such as plasma enhanced ALD (PEALD). , The second electrode layer pattern 500 including at least one of nickel (Ni), iron (Fe), tantalum (Ta), titanium (Ti), gold (Au), silver (Ag), and platinum (Pt). Form. Thereafter, when forming the second electrode layer pattern 500, since the hydrophobic self-assembled monolayer 700 has hydrophobicity, the second electrode layer pattern 500 is not formed on the hydrophobic self-assembled monolayer 700 and is hydrophobic self-assembled. The deposition is selectively performed on the adhesive layer pattern 400 formed in the opening pattern 710 of the monomolecular layer 700. When the second electrode layer pattern 500 is formed, the second electrode layer pattern 500 may be formed by an adhesive layer pattern 400 including a material having a higher chemical affinity with the second electrode layer pattern 500 than the metal oxide layer 300. Formation is easily performed. The thickness of the adhesive layer pattern may be appropriately selected within a range for forming a ReRAM device, for example, may be 1 to 10 nm, but is not limited thereto.

Next, if necessary, the hydrophobic self-assembled monolayer 700 may be removed.

Alternatively, in other embodiments, the hydrophobic self-assembled monolayer 700 may not be removed as needed.

Hereinafter, a ReRAM device manufactured by the method for manufacturing a ReRAM device according to the present invention will be described with reference to FIG. 6.

6 is a cross-sectional view of a ReRAM device manufactured by a method of manufacturing a ReRAM device according to an embodiment of the present invention.

As shown in FIG. 6, the ReRAM device includes a substrate 100, a first electrode layer 200, a metal oxide layer 300, and a second electrode layer pattern 500. In addition, the adhesive layer pattern 400 may be further included between the metal oxide layer 300 and the second electrode layer pattern 500.

The substrate may be a Si substrate, a silicon dioxide substrate or a polysilicon substrate, but is not limited thereto.

Depending on the type of substrate used, if necessary, the substrate 100 may include a substrate body layer 110 and a substrate insulating layer 120. In this case, the substrate insulating layer 120 is positioned on the substrate body layer 110 and may be silicon oxide (SiOx) or silicon nitride (SiNx).

The first electrode layer 200 is positioned on the substrate 100. The first electrode layer 200 is, for example, aluminum (Al), cobalt (Co), nickel (Ni), iron (Fe), tantalum (Ta), titanium (Ti), gold (Au), silver (Ag). ) And platinum (Pt), and may include one or more of platinum, which is chemically stable and has a relatively high electrical conductivity than other metals.

The metal oxide layer 300 is located on the first electrode layer 200. The metal oxide layer 300 has a property in which the electrical resistance varies greatly according to the magnitude of the voltage applied to the metal oxide layer 300. Specifically, the metal oxide layer 300 may include any one or more of titanium oxide (TiO₂), hafnium oxide (HfO₂), zirconium oxide (ZrO₂), nickel oxide (NiO), and alumina (Al₂O₃). For example, it may include titanium oxide.

The thickness of the metal oxide layer may be appropriately selected within a range for forming a ReRAM device, for example, 1 to 10 nm, but is not limited thereto.

The thickness of the adhesive layer pattern may be appropriately selected within a range for forming a ReRAM device, for example, 10 to 1000 nm, but is not limited thereto.

When the adhesive layer pattern 400 is formed, a chemical vapor deposition process (CVD) using a hydrophobic self-assembled monolayer 700 including a opening pattern 710 exposing the metal oxide layer 300 as a mask An adhesive layer pattern 400 is formed on the metal oxide layer 300 corresponding to the opening patterns 710 and 5 of the hydrophobic self-assembled monolayer layer 700 (FIG. 5) formed during the manufacture of the ReRAM device using the deposition method of FIG. The adhesive layer pattern 400 includes a metal having a higher chemical affinity with the metal oxide layer 300 than the second electrode layer pattern 500. Here, the chemical affinity means the adhesive force between two materials.

The adhesive layer pattern 400 serves to facilitate bonding between the second electrode layer pattern 500 and the metal oxide layer 300. Specifically, the adhesive layer pattern 400 may include cobalt (Co), nickel (Ni), iron (Fe), chromium (Cr), silver (Ag), aluminum (Al), tin (Sn), tungsten (W), It may include any one or more of ruthenium (Ru), palladium (Pd), cadmium (Cd) and silicon (Si). In a preferred embodiment of the present invention, when the metal oxide layer 300 is titanium oxide and the second electrode layer pattern 500 is platinum, the adhesive layer pattern 400 may include aluminum.

Subsequently, the second electrode layer pattern 500 may be a hydrophobic magnetic material using a deposition method such as a chemical vapor deposition process using the hydrophobic self-assembled monolayer layer 700 including the opening pattern 710 exposing the metal oxide layer 300 as a mask. It is formed on the adhesive layer pattern 400 formed corresponding to the opening pattern 710 of the assembled monolayer layer 700. The second electrode layer pattern 500 receives an electrical signal from the first electrode layer 200 in response to a change in electrical resistance of the metal oxide layer 300. More specifically, when the electrical resistance of the metal oxide layer 300 is high, the second electrode layer pattern 500 does not receive an electrical signal from the first electrode layer 200, and when the electrical resistance of the metal oxide layer 300 is low. The second electrode layer pattern 500 receives an electrical signal from the first electrode layer 200.

In the present invention, since the second electrode layer pattern 500 is formed by using the hydrophobic self-assembled monolayer 700 including the opening pattern 710 as a mask, the second electrode layer pattern 500 is different from the other metal. Compared with platinum (Pt), which is relatively difficult to etch, it is not necessary to form the second electrode layer pattern 500 by using a lift-off process that destabilizes the interface between the metal and the metal oxide layer.

Also, optionally, to facilitate bonding between the second electrode layer pattern 500 and the metal oxide layer 300 between the second electrode layer pattern 500 and the metal oxide layer 300, the second electrode layer pattern 500 When the adhesive layer pattern 400 having a higher chemical affinity with the metal oxide layer 300 is formed, the interface state between the metal oxide layer 300 and the adhesive layer pattern 400 is the metal oxide layer 300 and the second electrode layer. It is more stable than the interface state when the pattern 500 is in direct contact.

That is, according to the present invention, the second electrode layer pattern 500 is formed on the metal oxide layer 300 using the hydrophobic self-assembled monolayer 700 as a mask, or the adhesive layer pattern 400 and the second electrode layer pattern 500 are formed. ) Is sequentially formed, so that the interface state between the metal oxide layer 300 and the second electrode layer pattern 500 is stabilized, and unnecessary current loss of the ReRAM device, which may be caused by the instability of the interface state, is minimized.

Hereinafter, the embodiment of the present invention will be described in more detail.

 Example 1

Pt as a first electrode layer was deposited to a thickness of 100 nm on the SiO 2 substrate by a sputtering method and TiO 2 as a metal oxide layer was deposited by the CVD method. Subsequently, a PFS (Perfluorodecyltrichlorosilane) hydrophobic self-assembled monolayer containing an opening pattern was formed on the TiO₂ layer by microcontact printing. Thereafter, using the hydrophobic self-assembled monolayer as a mask, Pt, a second electrode layer, was selectively deposited on the TiO₂ layer by a CVD method through an opening pattern to manufacture a PRAM pattern / TiO₂ / Pt structure ReRAM device (FIG. 7). Subsequently, the produced ReRAM device was heat-treated at a temperature of 300 ° C. under N 2 atmosphere, and the characteristics of the ReRAM device before and after such heat treatment were analyzed and compared, respectively.

8 (a) and 8 (b) show an optical microscope image and atomic force microscopy (AFM) image of the surface of the ReRAM device fabricated in this example, respectively. Looking at the image of (a) and (b) of FIG. 8 as described above it can be seen that Pt is not selectively deposited on the portion where the hydrophobic self-assembled monolayer is formed. 9 is a graph showing the current-voltage behavior before and after the heat treatment of a Pt-pattern / TiO₂ / Pt structured ReRAM device manufactured according to the present embodiment, and shows a high resistance state after forming. ) And a low resistance state were observed once.

 [Example 2]

In Example 1, before the selective deposition of Pt, the second electrode layer, an Al layer pattern was formed as an adhesive layer on the TiO₂ layer by an CVD method through an opening pattern using the hydrophobic self-assembled monolayer as a mask. A ReRAM device having a (Pt-Al) pattern / TiO₂ / Pt structure was manufactured in the same manner as in Example 1, except that Pt, a second electrode layer, was deposited on the Al adhesive layer pattern. Subsequently, the produced ReRAM device was heat-treated at a temperature of 300 ° C. in an N 2 atmosphere, and the characteristics of the ReRAM device before and after such heat treatment were analyzed and compared, respectively.

10 (a) and 10 (b) show an optical microscope image and an atomic force microscope image of the surface of the ReRAM device of the (Pt-Al) pattern / TiO 2 / Pt structure prepared in this example, respectively. Looking at the image of (a) and (b) of FIG. 10 as described above it can be seen that Pt is not selectively deposited on the portion where the hydrophobic self-assembled monolayer is formed, so that Pt is selectively deposited. 11A and 11B are graphs showing the current-voltage behavior before and after the heat treatment of the (Pt-Al) pattern / TiO₂ / Pt structure ReRAM device manufactured according to the present embodiment, respectively. After forming, the characteristics of the high current state (high resistance state) and low current state (low resistance state) can be confirmed, and after the N2 heat treatment, it can be seen that the dispersion of the high current state and the low current state decreases. 12A and 12B are graphs showing comparisons of electrical factors before and after the heat treatment of ReRAM devices having a (Pt-Al) pattern / TiO 2 / Pt structure, respectively. 12A is a graph comparing the set voltage and the reset voltage before and after the above heat treatment, and it was confirmed that the dispersion of the set voltage and the reset voltage decreased after the above heat treatment. 12 (b) is a graph comparing the resistance of the on / off state before and after the heat treatment, it can be seen that the resistance also decreases after the above heat treatment.

The foregoing description of the present invention is intended for illustration, and it will be understood by those skilled in the art that the present invention may be easily modified in other specific forms without changing the technical spirit or essential features of the present invention. will be. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive. For example, each component described as a single type may be implemented in a distributed manner, and similarly, components described as distributed may be implemented in a combined form.

The scope of the present invention is shown by the following claims rather than the above description, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included in the scope of the present invention. do.

1 is a flowchart illustrating a method of manufacturing a ReRAM device according to an embodiment of the present invention.

2 to 5 are views for explaining a method of manufacturing a ReRAM device according to an embodiment of the present invention,

6 is a cross-sectional view of a ReRAM device manufactured according to one embodiment of the present invention;

7 shows a method of manufacturing a ReRAM device according to Embodiment 1 of the present invention,

8 is an optical microscope image (a)) and an AFM image (b) of a PRAM pattern / TiO₂ / Pt structure ReRAM device manufactured according to Example 1 of the present invention.

9 is a graph showing current-voltage behavior before and after heat treatment of a PRAM pattern / TiO₂ / Pt structure ReRAM device manufactured according to Example 1 of the present invention.

10 is an optical microscope image (a)) and an AFM image (b) of a (Pt-Al) pattern / TiO₂ / Pt structured ReRAM device prepared according to Example 2 of the present invention.

FIG. 11 is a graph showing current-voltage behavior before and after heat treatment of a ReRAM device having a (Pt-Al) pattern / TiO₂ / Pt structure prepared according to Example 2 of the present invention.

FIG. 12 is a graph comparing the set voltage and reset voltage before and after heat treatment of a (Pt-Al) pattern / TiO₂ / Pt structured ReRAM device manufactured according to Example 2 of the present invention with on / off states It is a graph comparing resistance of.

Claims (14)

Forming a first electrode layer on the substrate, Forming a metal oxide layer on the first electrode layer, Forming a hydrophobic self-assembled monolayer on the metal oxide layer, the hydrophobic self-assembled monolayer comprising an opening pattern exposing the metal oxide layer; Forming a second electrode layer pattern on the metal oxide layer through the opening pattern using the hydrophobic self-assembled monolayer as a mask Method of manufacturing a ReRAM device comprising a. The method of claim 1, And forming the hydrophobic self-assembled monolayer on the metal oxide layer is performed by a micro-contact printing method. The method of claim 1, The hydrophobic self-assembled monolayer is PFS (Perfluorodecyltrichlorosilane), OTS (Octadecyltrichlorosilane), OTMS (Octadecyltrimethoxysilane), HDT (1- Hexadecanethiol), FDTS (Heptadecafluoro-1,1,2,2-tetrahydrodecyl) trichlorosilane), FOTS (1H, 1H) 1H, 2H, 2H-perfluorodecyltrichlorosilane (PE), Pentafluorobenzenethiol (PFBT), Dichlorodimethylsilane (DDMS), a method for producing a ReRAM device. The method of claim 1, And the second electrode layer is formed on the metal oxide layer through the opening pattern by a chemical vapor deposition (CVD) method. The method of claim 1, The first electrode layer and the second electrode layer are aluminum (Al), cobalt (Co), nickel (Ni), iron (Fe), tantalum (Ta), titanium (Ti), gold (Au), and silver (Ag), respectively. And platinum (Pt) comprising one or more selected from the group consisting of, ReRAM device manufacturing method. The method of claim 1, The metal oxide layer includes one or more selected from the group consisting of titanium oxide (TiO₂), hafnium oxide (HfO₂), zirconium oxide (ZrO₂), nickel oxide (NiO), and alumina (Al₂O₃). Method of manufacturing the device. The method of claim 1, The method of manufacturing a ReRAM device further comprising the step of heat-treating the metal oxide layer. 8. The method according to any one of claims 1 to 7, And forming an adhesive layer pattern corresponding to the opening pattern between the metal oxide layer and the second electrode layer pattern by using the hydrophobic self-assembled monolayer as a mask. The method of claim 8, The adhesive layer pattern comprises a metal having a higher chemical affinity with the metal oxide layer than the second electrode layer pattern, the manufacturing method of the ReRAM device. The method of claim 9, The adhesive layer pattern is cobalt (Co), nickel (Ni), iron (Fe), chromium (Cr), silver (Ag), aluminum (Al), tin (Sn), tungsten (W), ruthenium (Ru), palladium (Pd), cadmium (Cd) and silicon (Si) comprising at least one selected from the group consisting of, a method for manufacturing a ReRAM device. ReRAM device manufactured by the method of manufacturing a ReRAM device according to any one of claims 1 to 7, comprising: Board, A first electrode layer formed on the substrate, A metal oxide layer formed on the first electrode layer, and The second electrode layer pattern formed on the metal oxide layer. A ReRAM device manufactured by the method of manufacturing a ReRAM device according to claim 8, comprising: Board, A first electrode layer formed on the substrate, A metal oxide layer formed on the first electrode layer, An adhesive layer pattern formed on the metal oxide layer, and A second electrode layer pattern formed on the adhesive layer pattern. 13. The method of claim 12, The adhesive layer pattern is a ReRAM device comprising a metal having a higher chemical affinity with the metal oxide layer than the second electrode layer pattern. The method of claim 13, The adhesive layer pattern is cobalt (Co), nickel (Ni), iron (Fe), chromium (Cr), silver (Ag), aluminum (Al), tin (Sn), tungsten (W), ruthenium (Ru), palladium (Pd), cadmium (Cd) and silicon (Si) that comprises at least one selected from the group consisting of, ReRAM device.

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