KR20100101747A - Transporting tray for substrate - Google Patents

Transporting tray for substrate Download PDF

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Publication number
KR20100101747A
KR20100101747A KR1020090020092A KR20090020092A KR20100101747A KR 20100101747 A KR20100101747 A KR 20100101747A KR 1020090020092 A KR1020090020092 A KR 1020090020092A KR 20090020092 A KR20090020092 A KR 20090020092A KR 20100101747 A KR20100101747 A KR 20100101747A
Authority
KR
South Korea
Prior art keywords
wafer
substrate
hole
transfer tray
substrate transfer
Prior art date
Application number
KR1020090020092A
Other languages
Korean (ko)
Inventor
김재선
심정진
Original Assignee
주식회사 실트론
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 실트론 filed Critical 주식회사 실트론
Priority to KR1020090020092A priority Critical patent/KR20100101747A/en
Publication of KR20100101747A publication Critical patent/KR20100101747A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Robotics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

PURPOSE: A tray for the transfer of a substrate is provided to grow a SiO2 back side layer in the rear side of a wafer by uniformly heating a wafer. CONSTITUTION: A tray for the transfer of a substrate includes a groove part(41) with a bottom surface which is arranged to be spaced apart from a substrate downward and a penetration hole(42) which is formed by passing through the bottom surface. The penetration hole is formed by passing through the central part of the bottom side. A plurality of penetration holes(43), which is arranged to be spaced apart with each other along the circumference of the penetration hole, are prepared. The penetration hole is vertically formed in a circle shape which has a smaller diameter than the penetration hole.

Description

Transporting tray for substrate

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate transfer tray, and more particularly, to a substrate transfer tray used to form a SiO 2 backside seal layer on a substrate and a thin film deposition apparatus having the same.

To form an epitaxial wafer, dopant atoms such as antimony (Sn), boron (B), and phosphorus (P) diffuse through the back of the wafer while growing a layer of silicon on the wafer at high temperature Dopant atoms coalesce into the epitaxial layer grown on the front of the wafer and contaminate the epitaxial layer. This phenomenon is called autodoping, which is most pronounced especially at the edge of the wafer. In addition, the automatic doping phenomenon causes the heterogeneity of the epitaxial layer to degrade the quality of the semiconductor.

In order to reduce the above auto doping effect, a technique for sealing the back side of the wafer by growing a silicon oxide (SiO 2 ) back side seal layer on the back side of the wafer has been developed.

In the conventional case, SiH 4 gas and O 2 are placed on the upper side of the wafer W while the rear surface a of the wafer W is seated on the substrate transfer tray 1 shown in FIG. Gas was flowed to form an SiO 2 film. However, in this case, since the front surface b of the wafer W is in contact with the surface of the substrate transfer tray 1, damage occurs on the front surface b of the wafer.

In order to improve this, as shown in FIG. 2, the SiO 2 film was formed using the substrate transfer tray 2 having the groove 2a formed on the upper surface thereof. In this case, since only the edge portion of the wafer front surface b is in contact with the transfer tray 2, it is possible to prevent damage from occurring in the center portion of the wafer front surface b. However, in this case, more heat is transferred through the conduction toward the edge of the wafer W in contact with the substrate transfer tray 2 than in the center of the wafer W, so that the temperature of the edge of the wafer W is increased. ) Is higher than the temperature at the center portion, and thus there is a problem that the SiO 2 film is formed on the wafer W with a non-uniform thickness.

The present invention has been made to solve the above problems, an object of the present invention is to improve the structure to form a SiO 2 back chamber layer with a uniform thickness on the back of the wafer while preventing damage to the front surface of the wafer It is to provide a tray for transferring the substrate.

In order to achieve the above object, the substrate transfer tray according to the present invention is formed to be inclined in a downward direction with respect to the upper surface and to extend inwardly from the inclined surface and the inclined surface contacting the edge of the substrate and spaced downward from the substrate. And a groove having a bottom surface disposed therein, and a through hole formed through the bottom surface.

According to the invention, the through hole is preferably formed through the center of the bottom surface.

In addition, according to the present invention, it is preferable that a plurality of through holes are formed to penetrate the bottom surface and are spaced apart from each other along the circumference of the through hole.

According to the present invention having the above-described configuration, since the front surface of the wafer and the substrate tray are prevented from contacting each other, the occurrence of damage on the front surface of the wafer is prevented.

In addition, since the wafer is uniformly heated, the SiO 2 backside seal layer grows to a uniform thickness on the back surface of the wafer.

3 is a plan view of a substrate transfer tray according to an exemplary embodiment of the present invention, and FIG. 4 is a cross-sectional view taken along line IV-IV of FIG. 3.

3 and 4, the substrate transfer tray 40 according to the present embodiment is for transferring a substrate such as a wafer w into a deposition apparatus, an apparatus for depositing a thin film layer such as a SiO 2 layer. It is formed in plate shape. The substrate transfer tray 40 is provided with a groove portion 41, a through hole 42, and a through hole 43.

The groove portion 41 has an inclined surface 41a and a bottom surface 41b. As shown enlarged in FIG. 4, the inclined surface 41a is formed to be inclined downward with respect to the upper surface 40a of the substrate transfer tray, and is formed at an edge portion of the wafer w, more precisely, below the wafer w. The edges are contacted and supported. The bottom surface 41b extends from the inclined surface 41a inwardly, that is, in the center direction of the substrate transfer tray 40. The bottom surface 41b is formed parallel to the top surface 40a of the substrate transfer tray, and is spaced downward from the wafer w. As in the present embodiment, in the case of the substrate transfer tray 40 for transferring a wafer w having a diameter of 300 mm, the outer diameter of the inclined surface 41a is formed to be 304.9 mm, and the inner diameter of the inclined surface 41a is 292.4. It is formed in mm.

The through hole 42 and the through hole 43 are for making heat transfer generated between the susceptor 20 and the wafer w uniform. The through hole 42 is formed in a circular shape having a diameter of 80 mm and is formed while penetrating the central portion of the bottom surface 41 b in the vertical direction. The through holes 43 are provided in plural and are spaced apart from each other along the circumferential direction of the through holes 42. Each through hole 43 is formed in a circular shape having a diameter smaller than the through hole 42. In the present embodiment, the through hole 43 is formed in a circular shape having a diameter of 35 mm, and is formed through the bottom surface 41b in a vertical direction. .

As described above, when the tray 40 for transporting the substrate is configured, heat transfer between the susceptor 20 and the wafer w occurs much more uniformly than in the related art.

That is, in the conventional embodiment, the lower surface of the wafer w is in surface contact with the substrate transport tray, whereas in the present embodiment, the lower edge of the wafer w is in line contact with the inclined surface 41a of the substrate transport tray. do. In addition, since the area in which the wafer w and the substrate iso tray 40 contact each other is reduced in this manner, the heat conducted to the edge of the wafer w through the substrate transfer tray 40 is reduced. As a result, the wafer is reduced. The temperature between the center of (w) and the edge of the wafer becomes uniform.

On the other hand, when the holes 42 and 43 are formed in the substrate transfer tray 40, the amount of heat transferred to the wafer w at the point where the hole is formed is transferred to the wafer w at the point where the hole is not formed. It will be more than the amount of heat that is added. Therefore, when the through holes 42 and the through holes 43 are formed in the center portion and the edge portion of the wafer w according to the temperature distribution of the wafer as in the present embodiment, the temperature of the wafer w becomes uniform. In particular, in the case of transferring the wafer w having a diameter of 300 mm, when the through hole 42 and the through hole 43 are formed as shown in FIG. 3, the temperature of the wafer w is much more uniform than before. Done. When the temperature of the wafer w becomes uniform in this manner, the SiO 2 layer grows to a uniform thickness on the wafer.

In addition, as described above, the edge portion of the wafer and the substrate transfer tray are in surface contact with each other, but in this embodiment, since the line contact is performed, the wafer w and the substrate transfer tray 40 are mutually different from each other. The area of contact will be reduced. Therefore, the damage caused by the contact between the wafer and the substrate transfer tray is reduced.

Although the preferred embodiments of the present invention have been shown and described above, the present invention is not limited to the specific preferred embodiments described above, and the present invention belongs to the present invention without departing from the gist of the present invention as claimed in the claims. Various modifications can be made by those skilled in the art, and such changes are within the scope of the claims.

1 and 2 are cross-sectional views of a conventional substrate transfer tray.

3 is a plan view of a substrate transport tray according to an embodiment of the present invention.

4 is a cross-sectional view taken along the line IV-IV of FIG. 4.

<Description of the symbols for the main parts of the drawings>

40 ... substrate transfer tray 41 ... groove

41a ... slope 41b ... bottom

42 through hole 43 through hole

Claims (4)

In the substrate transfer tray for transferring the substrate to the inside of the thin film deposition apparatus through which the exhaust hole is formed so that the process gas contained therein outflow, It is formed to be inclined downward with respect to the upper surface and formed with an inclined surface in contact with the edge portion of the substrate and extending inwardly from the inclined surface and a bottom surface spaced downward from the substrate, and penetrating through the bottom surface A substrate transfer tray, characterized in that a through hole is provided. The method of claim 1, The through hole is a substrate transfer tray, characterized in that formed through the center of the bottom surface. The method of claim 2, And a plurality of through holes formed through the bottom surface and spaced apart from each other along a circumference of the through hole. The method of claim 3, The through hole is formed in the vertical direction through the circular shape, The through hole is a substrate transfer tray, characterized in that penetrating in the vertical direction in a circular shape having a diameter smaller than the through hole.
KR1020090020092A 2009-03-10 2009-03-10 Transporting tray for substrate KR20100101747A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020090020092A KR20100101747A (en) 2009-03-10 2009-03-10 Transporting tray for substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020090020092A KR20100101747A (en) 2009-03-10 2009-03-10 Transporting tray for substrate

Publications (1)

Publication Number Publication Date
KR20100101747A true KR20100101747A (en) 2010-09-20

Family

ID=43007087

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020090020092A KR20100101747A (en) 2009-03-10 2009-03-10 Transporting tray for substrate

Country Status (1)

Country Link
KR (1) KR20100101747A (en)

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