KR20100100621A - Display unit - Google Patents

Abstract

PURPOSE: A displaying unit is provided to reduce a diffraction-reflection phenomenon by forming either upper side of the source or the drain of a second transistor on an opposite region with respect to the anode or the cathode of an organic electroluminescent element. CONSTITUTION: A displaying unit includes an organic electroluminescent element and a pixel circuit. The pixel circuit includes a first transistor(Tws) for recording an image signal and a second transistor(TDr) for driving the image signal. The second transistor drives the organic electroluminescent element based on the image signal of the first transistor. The second transistor includes gates(31A, 32A), sources(31B, 32B), and drains(31C, 32C). The organic electroluminescent element includes an anode(35A), an organic layer, and a cathode.

Description

Display unit {DISPLAY UNIT}

The present invention relates to a display unit including an organic EL (electro luminescence) element.

In recent years, in the field of a display unit for performing image display, as a light emitting element of a pixel, a display unit using a current-driven optical element, for example, an organic EL element, in which the luminescence brightness is changed in accordance with a flowing current value, has been developed and commercialization proceeds. (For example, see Japanese Patent Laid-Open No. 2008-083272).

An organic EL element is a self-luminous element unlike a liquid crystal element etc. Therefore, in the display unit (organic EL display unit) containing an organic EL element, since a light source (backlight) is not needed, compared with the liquid crystal display unit which requires a light source, image visibility is high, power consumption is low, In addition, the device responds quickly.

In the organic EL display unit, similarly to the liquid crystal display unit, there are a simple (passive) matrix method and an active matrix system as its driving methods. Although the former has a simple structure, there is a problem that it is difficult to realize a large and high-precision display unit. Therefore, development of the active matrix system is prosperous at present. In this system, the current flowing through the light emitting elements arranged for each pixel is controlled by an active element (typically a thin film transistor (TFT)) provided in a driving circuit provided for each light emitting element.

14 shows a general configuration of a general organic EL display unit. The display unit 100 illustrated in FIG. 14 includes a display unit 110 in which a plurality of pixels 120 are arranged in a matrix, and a driver unit (horizontal drive circuit 130 and a write scan circuit) for driving each pixel 120. 140 and a power source scanning circuit 150 are provided.

Each pixel 120 is comprised of the pixel 120R for red, the pixel 120G for green, and the pixel 120B for blue. The pixels 120R, 120G, and 120B are constituted by the organic EL elements 121 (organic EL elements 121R, 121G, 121B) and the pixel circuit 122 connected thereto, as shown in Figs. 15 and 16. It is becoming. 15 illustrates a circuit configuration of the pixels 120R, 120G, and 120B. 16 shows the layout of the pixels 120R, 120G, and 120B.

The pixel circuit 122 is composed of a sampling transistor T _WS , a holding capacitor C _s , and a driving transistor T _Dr , and has a circuit structure of 2Tr1C. The gate line WSL drawn out from the write scan circuit 140 extends in the row direction and is connected to the gate 123A of the transistor T _WS through the contact 126A.

The drain line DSL drawn out from the power source scanning circuit 150 is also extended in the row direction, and is connected to the drain 124C of the transistor T _Dr via the lead wiring 128A. The signal line DTL drawn out from the horizontal drive circuit 130 extends in the column direction and is connected to the drain 123C of the transistor T _WS through the contact 126B and the lead wiring 128B. The source 123B of the transistor T _WS is connected to the gate 124A of the driving transistor T _Dr and one end (terminal 125A) of the holding capacitor C _s through the contact 126C. have. The source 124B of the transistor T _Dr and the other end of the holding capacitor C _s (terminal 125B) are connected to the organic EL elements 121R, 121G, 121B (hereinafter referred to as organic EL elements) via the contact 126D. (121R, etc.) is omitted. The cathode 127B of the organic EL element 121R or the like is connected to the ground line GND.

FIG. 17 illustrates a cross-sectional configuration along the line A-A in FIG. 12. Each pixel 120 has a gate 124A (terminal 125A), a gate insulating film 112, and a source 124B (terminal 125B) on the substrate 111 at a portion corresponding to the line AA in FIG. 16. ), An insulating protective film 113, an insulating planarizing film 114, an opening defining insulating film 115, an organic EL element 121, and an insulating protective film 116. Just below the anode 127A of the organic EL element 121R, for example, a source 124B (terminal 125B) having a film thickness of about 1 μm exists, whereby the anode 127A ), An insulating planarization film 114 is formed for the purpose of preventing unevenness.

In reality, however, as shown in FIG. 17, due to the source 124B (terminal 125B), the unevenness 127D of about 0.3 to 0.4 μm, for example, is generated in the anode 127A. This uneven | corrugated 127D reflects the shape of the source 124B (terminal 125B), and is extended long in a column direction. Therefore, when the external light L enters the anode 127A, diffraction and reflection is caused by the unevenness 127D, so that the reflected light becomes visible to an observer (not shown), and the image quality is deteriorated. have.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and an object of the present invention is to provide a display unit capable of reducing diffraction reflection.

According to one embodiment of the present invention, there is provided a first display unit including a display portion having an organic EL element and a pixel circuit for each pixel. The pixel circuit includes a first transistor for recording that records a video signal and a second transistor for driving that drives the organic EL element based on the video signal recorded by the first transistor. . The second transistor includes a gate, a source, and a drain. The organic EL device includes an anode, an organic layer, and a cathode. An upper surface of the source or the drain is formed at least in an opposite region of the anode or the cathode.

In the first display unit of the present invention, the upper surface of the source or the drain of the second transistor is formed at least in an area facing the anode or the cathode of the organic EL element. As a result, a step corresponding to the end of the source or the drain does not exist immediately below the anode or the cathode, and the anode or the cathode is formed on the flat surface.

According to one embodiment of the present invention, a display unit is provided that includes a display portion having an organic EL element and a pixel circuit for each pixel. The pixel circuit includes a first transistor for recording that records a video signal and a second transistor for driving that drives the organic EL element based on the video signal recorded by the first transistor. . The second transistor includes a gate, a source, and a drain. The organic EL device includes an anode, an organic layer, and a cathode. The source or the drain has a long side portion including a continuous curved surface.

In the second display unit of the present invention, the source or the drain of the second transistor has a long side portion including a continuous curved surface. Thereby, the unevenness | corrugation corresponding to the continuous curved surface formed in the long side part of a source or a drain is formed in the anode or the cathode of an organic electroluminescent element.

In the first and second display units of the embodiment of the present invention, the display section includes a storage capacitor connected between the gate and the source or the drain for each pixel. In this case, the holding capacitor may include the source or the drain having an upper surface of the source or the drain formed at least in the region facing the anode or the cathode and the gate.

According to the first display unit of the present invention, the upper surface of the source or the drain of the second transistor is formed at least in an area facing the anode or the cathode of the organic EL element. This can reduce diffraction reflection when external light enters the anode or the cathode. As a result, the deterioration of the image quality resulting from diffraction reflection can be suppressed.

According to the second display unit of the present invention, the long side portion including the continuous curved surface is provided in the source or drain of the second transistor. Thereby, when external light enters an anode or a cathode, it can reduce that diffraction reflection generate | occur | produces in a fixed direction. As a result, the fall of the image quality resulting from diffraction reflection can be suppressed.

Other objects, advantages and features of the present invention will become more apparent from the following description taken in conjunction with the accompanying drawings.

1 is a schematic configuration diagram of a display unit according to a first embodiment of the present invention.
2 is a circuit diagram illustrating a pixel of FIG. 1.
3 is a layout diagram of pixels of FIG. 1;
4 is a cross-sectional configuration diagram of the pixel of FIG. 3.
5 is a layout diagram of a variant of the pixel of FIG. 1;
6 is a layout diagram of pixels included in a display unit according to a second embodiment of the present invention.
7 is a cross-sectional configuration diagram of the pixel of FIG. 6.
FIG. 8 is a plan view illustrating a schematic configuration of a module including a display unit of each of the above embodiments. FIG.
9 is a perspective view showing an appearance of a first application example of the display unit according to the embodiment;
10: A is a perspective view which shows the external appearance seen from the outside of the 2nd application example, B is a perspective view which shows the external appearance seen from the back surface.
11 is a perspective view showing an appearance of a third application example.
12 is a perspective view showing an appearance of a fourth application example.
13A is a front view of a fifth application example in an open state, B is a side view thereof, C is a front view thereof in a closed state, D is a left side view, E is a right side view, F is a top view, and G is a bottom view.
14 is a schematic configuration diagram of a conventional display unit.
15 is a circuit diagram illustrating a pixel of FIG. 10.
16 is a layout diagram of pixels of FIG. 10;
17 is a cross-sectional configuration diagram of the pixel of FIG. 16;

EMBODIMENT OF THE INVENTION Hereinafter, the form for implementing this invention is demonstrated in detail with reference to drawings. The description will be made in the following order.

1. First embodiment (the area of the source is large)

2. Modification

3. 2nd Embodiment (In the edge of a cathode, a continuous curved surface is included)

4. Modification

5. Modules and Application Examples

1. First embodiment

1 shows an example of the entire configuration of the display unit 1 according to the first embodiment of the present invention. The display unit 1 includes a display portion 10 and a peripheral circuit portion formed around the display portion 10 on a substrate 40 (to be described later) made of, for example, glass, silicon (Si) wafer or resin. 20) (drive part) is provided.

Display part (10)

The display unit 10 arranges a plurality of pixels 11 in a matrix form over the entire surface of the display unit 10, and displays an image based on the externally input video signal 20a by active matrix driving. Each pixel 11 includes a pixel 11R for red, a pixel 11G for green, and a pixel 11B for blue.

2 shows an example of a circuit configuration of the pixels 11R, 11G, and 11B. 3 shows the layout of the pixels 11R, 11G, 11B. In the pixel 11R, 11G, 11B, as shown in FIG. 2, organic electroluminescent element 12R, 12G, 12B (light emitting element) and the pixel circuit 13 are provided.

The pixel circuit 13 includes a storage capacitor C connected between a transistor T _WS (first transistor), a transistor T _Dr (second transistor), and a gate-source of the transistor T _{Dr. s} ) and the circuit structure of 2Tr1C. The transistor T _WS is a recording transistor for recording a video signal. The transistor T _Dr is used for driving the organic EL elements 12R, 12G, and 12B (hereinafter, collectively referred to as the organic EL element 12) based on the video signal recorded by the transistor T _WS . Transistor. The transistors T _WS and T _{Dr are} formed of, for example, an n-channel MOS thin film transistor (TFT (Thin Film Transistor)).

around Circuit (20)

The side circuit section 20 includes a timing control circuit 21, a horizontal drive circuit 22, a write scan circuit 23, and a power supply scan circuit 24. The timing control circuit 21 includes a display signal generating circuit 21A and a display signal holding control circuit 21B. In the peripheral circuit portion 20, a gate line WSL, a drain line DSL, a signal line DTL, and a ground line GND are provided. In addition, the ground line is connected to ground and becomes a ground voltage (reference voltage) when connected to ground.

The display signal generation circuit 21A generates a display signal 21a for displaying on the display unit 10 for each screen (for each display of one field), for example, based on the externally input video signal 20a. It is.

The display signal holding control circuit 21B configures the display signal 21a output from the display signal generating circuit 21A for each screen (for each display of one field), for example, from an SRAM or the like (Static Random Access Memory). It is stored in the field memory. The display signal holding control circuit 21B also serves to control the horizontal driving circuit 22, the write scanning circuit 23, and the power supply scanning circuit 24 to operate in conjunction with each pixel 11. have. Specifically, the display signal holding control circuit 21B receives the control signal 21b for the write scanning circuit 23, the control signal 21c for the power supply scanning circuit 24, and the display signal driving circuit 21C. Are output to the control signal 21d, respectively.

The horizontal drive circuit 22 can output a voltage corresponding to the control signal 21d output from the display signal holding control circuit 21B. Specifically, the horizontal drive circuit 22 supplies a predetermined voltage to the pixel 11 selected by the write scan circuit 23 through the signal line DTL connected to each pixel 11 of the display unit 10. It is supposed to be done.

The write scanning circuit 23 can output the voltage corresponding to the control signal 21b output from the display signal holding control circuit 21B. Specifically, the write scanning circuit 23 supplies a predetermined voltage to the pixel 11 to be driven through the gate line WSL connected to each pixel 11 of the display unit 10, and thus for sampling. The transistor T _WS is controlled.

The power supply scanning circuit 24 can output a voltage corresponding to the control signal 21c output from the display signal holding control circuit 21B. Specifically, the power supply scanning circuit 24 supplies a predetermined voltage to the pixel 11 to be driven through the drain line DSL connected to each pixel 11 of the display unit 10, and the organic EL element. The light emission and the extinguishing of (12R etc.) are controlled.

layout

Next, with reference to FIG. 2, FIG. 3, the connection relationship of each component is demonstrated. The gate line WSL drawn out from the write scan circuit 23 is extended in the row direction, used through the contact 34A, and connected to the gate 31A of the transistor T _WS . The drain line DSL drawn out from the power supply scanning circuit 24 is also extended in the row direction and is connected to the drain 32C of the transistor T _Dr via the drawing wiring 36A. The signal line DTL drawn out from the horizontal drive circuit 22 extends in the column direction and is connected to the drain 31C of the transistor T _WS through the contact 34B and the lead wiring 36B. The source 31B of the transistor T _WS is connected to the gate 32A of the driving transistor T _Dr and one end (terminal 33A) of the holding capacitor C _s . The source 32B of the transistor T _Dr and the other end (terminal 33B) of the storage capacitor C _s are connected to the anode 35A of the organic EL element 12 via the contact 34D. . The cathode 35B of the organic EL element 12 is connected to the ground line GND.

Sectional composition

FIG. 4 shows a cross-sectional configuration along the line A-A in FIG. 3. Each pixel 11 has a gate 32A (terminal 33A), a gate insulating film 41 and a source 32B (terminal 33B) on the substrate 40 at a portion corresponding to the AA line in FIG. 3. ), An insulating protective film 42, an insulating planarizing film 43, an organic EL element 12, an opening defining insulating film 44, and an insulating protective film 45.

The gate 32A (terminal 33A) is formed in the surface of the board | substrate 40, and is formed in the area | region containing the opposing area | region with EL opening 44A mentioned later generally. 3, the case where the gate 32A (terminal 33A) is formed in the area | region including the area | region which opposes the area | region except the upper part among EL opening part 44A is illustrated. The gate insulating film 41 covers the entire surface of the substrate 40 including the gate 32A (terminal 33A). Further, the gate 32A is extremely thin, and substantially no irregularities due to the gate 32A are present in the gate insulating film 41. That is, the upper surface of the gate insulating film 41 is optically equivalent to the flat surface.

The source 32B (terminal 33B) is formed between the gate insulating film 41 and the insulating protective film 42. The upper surface 32B-1 (the upper surface 33B-1 of the terminal 33B) of the source 32B is a flat surface and is formed at least in an area facing the anode 35A. In addition, as will be described later, since a part of the upper surface of the anode 35A corresponds to the EL opening 44A, the upper surfaces 32B-1 and 33B-1 form an opposing area with the EL opening 44A. It is formed in the area to include.

The insulating protective film 42 covers the entire surface of the gate insulating film 41 and the source 32B (terminal 33B). Since the insulating protective film 42 is formed along the surfaces of the gate insulating film 41 and the source 32B (terminal 33B), the step 42A corresponding to the end of the source 32B (terminal 33B) is provided. ) This step 42A is formed in the non-opposite region with the anode 35A, and at least the opposing region with the anode 35A of the upper surface of the insulating protective film 42 is a flat surface.

The insulating planarization film 43 is provided for the purpose of flattening the base of the source 32B (terminal 33B) and covers the entire surface of the insulating protective film 42. The insulating planarization film 43 has, for example, a step 43A having a height of about half or less of the height of the step 42A at a portion corresponding to the step 42A. This step 43A is formed in the non-opposite region with the anode 35A, and at least the opposing region with the anode 35A of the upper surface of the insulating planarization film 43 is a flat surface.

The organic EL element 12 has a configuration in which an anode 35A (anode), an organic layer 35C, and a cathode 35B (cathode) are laminated in order on the substrate 40 side, for example. The organic layer 35C is formed by, for example, a hole injection layer having increased hole injection efficiency, a hole transport layer having increased hole transport efficiency to the light emitting layer, and recombination of electrons and holes, in order, on the anode 35A side, for example. It has the laminated structure which laminated | stacked the light emitting layer which generate | occur | produces light emission, and the electron carrying layer which improved the electron transport efficiency to the light emitting layer. The anode 35A is formed on the surface (flat surface) of the portion surrounded by the step 43A among the insulating planarization films 43. Therefore, unevenness corresponding to the steps 42A and 43A does not exist in the anode 35A, and the anode 35A is a flat film along which the insulating planarization film 43 is along the flat surface. The cathode 35B is formed in contact with at least the upper surface of the organic layer 35C, and covers, for example, the entire surface of the organic layer 35C and the opening defining insulating film 44.

The opening defining insulating film 44 is formed in the same plane as the anode 35A of the organic EL element 12 and has an opening (EL opening 44A) corresponding to the anode 35A. The EL opening 44A is formed in a part of the region facing the upper surface of the anode 35A, and the opening defining insulating film 44 covers the outer edge (periphery) of the anode 35A. That is, only a part of the top surface of the anode 35A is exposed on the bottom surface of the EL opening 44A, and the organic layer 35C is exposed on the bottom surface of the EL opening 44A of the top surface of the anode 35A. We are in contact with part that we do.

The insulating protective film 45 covers the whole surface of the cathode 35B. The insulating protective film 45 is formed of a material transparent to the light emitted from the organic EL element 12. Therefore, the insulating protective film 45 can transmit not only the light emission of the organic EL element 12 but the external light of the wavelength band common to the light emission of the organic EL element 12.

Motion and effects

In the display unit 1 of the present embodiment, the pixel circuit 13 of each pixel 11 is turned on and off, and a driving current is injected into the organic EL element 12 of each pixel 11. Holes and electrons recombine to emit light. This light multiplexes reflection between the anode 35A and the cathode 35B, passes through the cathode 35B, and is taken out to the outside. As a result, an image is displayed on the display unit 10.

By the way, in the conventional display unit, as shown in FIG. 17, for example, the source 124B (terminal) of about 1 micrometer in thickness just under the anode 127A of organic electroluminescent element 121R etc. (125B)) exists, and, as a result, the unevenness 127D of about 0.3-0.4 micrometers is produced in the anode 127A. This uneven | corrugated 127D reflects the shape of the source 124B (terminal 125B), and is extended long in a column direction. Therefore, when external light L enters the anode 127A, it diffracts and reflects at this unevenness 127D. As a result, the reflected light is visible to an observer (not shown), causing a problem such as deterioration in image quality.

On the other hand, in this embodiment, the source 32B (terminal 33B) whose film thickness is about 1 micrometer exists just under the anode 35A of the organic EL element 12 similarly to the conventional example. . However, in this embodiment, the upper surface 32B-1 (the upper surface 33B-1 of the terminal 33B) of the source 32B is formed at least in an area facing the anode 35A. Therefore, steps 42A and 43A formed in the insulating protective film 42 or the insulating planarization film 43 do not exist immediately below the anode 35A in correspondence with the end of the source 32B (terminal 33B). Instead, the anode 35A is formed on the flat surface of the insulating planarization film 43. That is, unevenness corresponding to the steps 42A and 43A does not exist in the anode 35A, and the anode 35A is a flat film along the flat surface of the insulating planarization film 43. Therefore, when the external light L enters the anode 35A, since diffraction reflection does not occur as in the prior art, there is no fear that the image quality is lowered due to the diffraction reflection.

Variant

In the above embodiment, the case where the upper surfaces 32B-1 and 33B-1 are formed at least in the region facing the anode 35A is illustrated, but the diffraction reflection can be reduced as compared with the conventional example. Within the range, it may be away from the region facing the anode 35A. For example, as shown in FIG. 5, the upper surfaces 32B-1 and 33B-1 deviate upward in the drawing in relation to the anode 35A, and the short sides 35A- of the anode 35A are located. 1) It may be opposed to only (short side and its periphery). In the case of FIG. 5, the sides and the vicinity of the longitudinal direction of the anode 35A face the upper surfaces 32B-1 and 33B-1, and at least diffraction reflection does not occur. Therefore, compared with the conventional example, diffraction reflection can be reduced. As a result, the deterioration of the image quality resulting from diffraction reflection can be suppressed. In addition, although not shown, only when the unevenness | corrugation which arises in the anode 35A becomes extremely small about 0.1 micrometer, for example, the edge part of the upper surface 32B-1 and 33B-1 is the edge part of the anode 35A. It may be located slightly inside.

Second embodiment

6 shows the layout of the pixels 11 (11R, 11G, 11B) of the display unit according to the second embodiment of the present invention. The display unit according to the present embodiment, the transistor gate (52A) to the gate (32A) substitute for the (T _Dr), the transistors in that it comprises a source (52B) to the source (32B) substitute for the (T _Dr), respectively It differs from the structure of the display unit 1 of the said embodiment and its modification. The display unit according to the present embodiment, the storage capacitor (C _s) terminal (33A) substituted with terminals (53A) a storage capacitor having a terminal (33B) substituted in the terminal (53B) of the (C _s) each It differs from the structure of the display unit 1 of the said embodiment and its modification in the point which it is doing. Then, below, the difference with the said embodiment and its modification is mainly demonstrated, and description about the common point with the said embodiment and the modification is abbreviate | omitted suitably.

layout

In the present embodiment, the gate 52A (terminal 53A) has an area smaller than the area of the gate 32A (terminal 33A) of the above embodiment. Except for the part mainly serving as the gate 32A of the transistor T _Dr , the gate 52A (terminal 53A) is in a region facing the anode 35A. That is, the gate 52A (terminal 53A) has the same structure as the gate 124A (terminal 125A) of the conventional example shown in FIG.

On the other hand, the source 52B (terminal 53B) also has an area smaller than that of the source 32B (terminal 33B) of the above embodiment, and mainly functions as the source 52B of the transistor T _Dr. Except for the part described above, it is in the region facing the anode 35A. That is, the source 52B (terminal 53B) has the same structure as the source 124B (terminal 125B) of the prior art example shown in FIG. 16 in that point.

However, the source 52B (terminal 53B) is different from the source 124B (terminal 125B) of the conventional example, and at least, the long side part 54 (long side of the source 52B (terminal 53B)) is long. And its vicinity) are wavy in the in-plane direction and are not linear. That is, the source 52B (terminal 53B) includes the continuous curved surface at least in the long side part 54 of the source 52B (terminal 53B). 6, the source 52B (terminal 53B) includes the curved surface which continues not only in the long side part 54 but also in the short side part 55 (single side and its vicinity). It is illustrated. 6 illustrates a case where the source 31B of the transistor T _WS formed in the same layer as the source 52B (terminal 53B) also includes a long side and a curved surface continuous to the vicinity thereof. It is.

Sectional composition

FIG. 7 shows a cross-sectional configuration along the line A-A in FIG. 6. Each pixel 11 has a gate 52A (terminal 53A), a gate insulating film 41 and a source 52B (terminal 53B) on the substrate 40 at a portion corresponding to the AA line in FIG. 6. ), An insulating protective film 42, an insulating planarizing film 43, an organic EL element 12, an opening defining insulating film 44, and an insulating protective film 45.

The gate 52A (terminal 53A) is formed on the surface of the substrate 40 and, as described above, except for a portion mainly serving as the gate 32A of the transistor T _Dr , the anode ( It is formed in the area | region facing 35A). The gate insulating film 41 covers the entire surface of the substrate 40 including the gate 52A (terminal 53A). The gate 52A (terminal 53A) is extremely thin, and substantially no irregularities due to the gate 52A (terminal 53A) exist in the gate insulating film 41. That is, the upper surface of the gate insulating film 41 is optically equivalent to the flat surface.

The source 52B (terminal 53B) is formed between the gate insulating film 41 and the insulating protective film 42. The upper surface 52B-1 of the source 52B (the upper surface 53B-1 of the terminal 53B) becomes a flat surface and, as described above, mainly functions as the source 52B of the transistor T _Dr. Except for the portion, it is formed in the region facing the anode 35A. The upper surfaces 52B-1 and 53B-1 are formed in the region facing the EL opening 44A except for the part mainly functioning as the source 52B of the transistor T _Dr.

The insulating protective film 42 covers the entire surface of the gate insulating film 41 and the source 52B (terminal 53B). The insulating protective film 42 is formed along the surfaces of the gate insulating film 41 and the source 52B (terminal 53B), and is stepped at a portion corresponding to the end of the source 52B (terminal 53B). It has 42A. The step 42A is wavy in the in-plane direction similarly to the end of the source 52B (terminal 53B) (including a continuous curved surface). The step 42A is formed in an area facing the anode 35A and the EL opening 44A, and the area facing the anode 35A and the EL opening 44A is in-plane among the upper surfaces of the insulating protective film 42. It is an uneven surface having curvature in the direction.

The insulating planarization film 43 is provided for the purpose of flattening the base of the source 52B (terminal 53B) and covers the entire surface of the insulating protective film 42. The insulating planarization film 43 has, for example, a step 43A having a height of about half or less of the height of the step 42A at a portion corresponding to the step 42A. The step 43A is wavy in the in-plane direction similar to the step 42A (including a continuous curved surface). The step 43A is formed in an opposing area between the anode 35A and the EL opening 44A, and at least an opposing area between the anode 35A and the EL opening 44A of the upper surface of the insulating planarization film 43 is And an uneven surface having curvature in the in-plane direction.

In the organic EL element 12, the anode 35A is formed on the surface (uneven surface) including the step 43A among the insulating planarization films 43. Therefore, unevenness corresponding to the step 43A is formed in the anode 35A, and has a step 35D along the uneven surface of the insulating planarization film 43. The step 35D has a wavy shape in the in-plane direction similar to the step 43A (including a continuous curved surface). The step 35D is exposed on the bottom surface of the EL opening 44A, and the unevenness corresponding to the step 35D is formed in the organic layer 35C and the cathode 35B.

effect

In the display unit of the present embodiment, a source 52B (terminal 53B) having a film thickness of about 1 μm exists just below the anode 35A of the organic EL element 12 as in the conventional example. have. In addition, the upper surfaces 52B-1 and 53B-1 of the source 52B (terminal 53B) are EL except for the part mainly functioning as the source 52B of the transistor T _Dr as in the conventional example. It is formed in the area | region opposing the opening part 44A. However, in the present embodiment, the source 52B (terminal 53B) includes a curved surface continuous to the long side portion 54 of the source 52B (terminal 53B). Therefore, the unevenness corresponding to the continuous curved surface formed in the long side part 54 of the source 52B (terminal 53B) is formed in the anode 35A. In addition, in this embodiment, the source 52B (terminal 53B) includes the curved surface continuous also to the short side part 55 of the source 52B (terminal 53B). Therefore, the unevenness corresponding to the continuous curved surface formed in the short side part 55 of the source 52B (terminal 53B) is formed in the anode 35A. Therefore, since the diffraction reflection does not occur in a predetermined direction when the external light L enters the anode 35A, the image quality is not deteriorated due to the diffraction reflection.

Variant

In the said embodiment, although the case where the source 52B (terminal 53B) contains the curved surface continuous to the long side part 54 and the short side part 55 is illustrated, diffraction is compared with the conventional example. As long as reflection can be reduced, the formation area | region of a continuous curved surface may be reduced. For example, although not shown, a continuous curved surface is provided only on the long side portion 54 of the source 52B (terminal 53B), and the short side portion 55 does not have such a curved surface, but has a straight line shape. You may provide a cross section. This can reduce the occurrence of diffraction reflection in a fixed direction. As a result, the deterioration of the image quality resulting from diffraction reflection can be suppressed.

Module and Application Examples

Hereinafter, the application example of the display unit demonstrated by each said embodiment and its modification is demonstrated. The display unit according to the above-described embodiments includes an image signal input from the outside or a video signal generated internally, such as a video terminal or a portable terminal device such as a television device, a digital camera, a notebook computer, a mobile phone, or a video camera. It is possible to apply it to the display unit of the electronic equipment of all the fields displayed as an image.

module

The display unit of the above embodiment or the like is, for example, a module as shown in FIG. 8 and incorporated into various electronic devices such as the first to fifth application examples described later. This module is provided with, for example, an area 210 exposed from a member (not shown) that seals the display portion 10 on one side of the substrate 2, and in this exposed area 210, External connection terminals (not shown) are formed by extending the wirings of the timing control circuit 21, the horizontal drive circuit 22, the write scan circuit 23, and the power supply scan circuit 24. The external connection terminal may be provided with a flexible printed wiring board (FPC) 220 for inputting and outputting signals.

First application example

9 shows the appearance of a television apparatus to which a display unit such as the above embodiment is applied. This television device is provided with the video display screen part 300 which contains the front panel 310 and the filter glass 320, for example, and this video display screen part 300 displays display of the said embodiment etc. It is comprised by a unit.

Second Application example

Fig. 10 shows the appearance of a digital camera to which a display unit such as the above embodiment is applied. This digital camera has, for example, a light emitting portion 410, a display portion 420, a menu switch 430, and a shutter button 440 for flash, and the display portion 420 is the embodiment described above. It is comprised by the display unit of.

Third Application example

Fig. 11 shows an appearance of a notebook personal computer to which the display unit of the above-described embodiment or the like is applied. This notebook personal computer has, for example, a main body 510, a keyboard 520 for input operation of characters and the like, and a display unit 530 for displaying an image. It is comprised by display units, such as a form.

Fourth Application example

12 shows the appearance of a video camera to which a display unit such as the above embodiment is applied. For example, the video camera includes a main body 610, a lens 620 for photographing a subject provided on the front side of the main body 610, a start / stop switch 630 and a display 640 at the time of shooting. The display part 640 is comprised by display units, such as the said embodiment.

5th Application example

Fig. 13 shows the appearance of a cellular phone to which the display unit of the above-described embodiment or the like is applied. The mobile phone is, for example, the upper box 710 and the lower box 720 connected by a connecting portion (hinges) 730, and the display 740, the sub display 750, and the picture light 760. And a camera 770. The display 740 or the sub display 750 is configured by display units such as the above embodiments.

As mentioned above, although this invention was demonstrated with each said embodiment, its modified example, and application example, this invention is not limited to them, A various deformation | transformation is possible.

For example, in the above embodiment and the like, the case where the display unit is an active matrix type has been described. However, the configuration of the pixel circuit 13 for driving the active matrix is not limited to that described in the above embodiment and the like. Therefore, a capacitor or a transistor may be added to the pixel circuit 13. In that case, in accordance with the change of the pixel circuit 13, the necessary driving circuit may be added in addition to the above-described horizontal driving circuit 22, the write scanning circuit 23, and the power supply scanning circuit 24.

In the above embodiment, the signal holding control circuit 21B controls the driving of the horizontal driving circuit 22, the write scanning circuit 23, and the power supply scanning circuit 24, but other circuits perform such driving. You may make it control. In addition, the control of the horizontal drive circuit 22, the write scan circuit 23, and the power source scan circuit 24 may be controlled by hardware (circuit) or may be controlled by software (program).

In the above embodiment and the like, the source and drain of the transistor T _WS and the source and drain of the transistor T _Dr are described as being fixed, but needless to say, depending on the direction in which the current flows The opposite relationship between and drain may be reversed from the above description.

In the above embodiment and the like, the transistors T _WS and T _Dr are described as being formed by an n-channel MOS type TFT, but at least one of the transistors T _WS and T _Dr is a p-channel MOS. It may be formed by a TFT of a type | mold. In the case where the transistor T _{Dr is} formed of a p-channel MOS type TFT, the anode 35A of the organic EL element 12 becomes a cathode in the above-described embodiment and the like, and the organic EL element 12 ) Cathode 35B becomes an anode. In the above embodiment, the transistors T _WS and T _Dr may be amorphous silicon TFTs or low temperature polysilicon TFTs.

One… Display unit
10... Display
11, 11R, 11G, 11B... pixel
12, 12R, 12G, 12B... Organic EL device
13... Pixel circuit
20... Peripheral circuit
21 ... Timing control circuit
21A... Display signal generation circuit
21B... Display signal holding control circuit
22... Horizontal drive circuit
23 ... Recording scanning circuit
24 ... Power scan circuit
31A, 32A... gate
31B, 32B... sauce
32B-1, 33B-1, 52B-1, 53B-1... Top
31C, 32C... drain
33A, 33B... Terminals
34A, 34B, 34C, 34D... Contact
35A... Anode
35B... Cathode
35C... Organic layer
35D, 42A, 43A... Step
35A-1, 55... Short edge
36A, 36B... Leader
40 ... Board
41... Gate insulating film
42, 45... Insulation shield
43 ... Insulation planarization film
44 ... Aperture regulation insulating film
44A... EL opening
54... Long side
C _s … Holding capacity
DSL… Drain wire
DTL… Signal line
L… Outer light
T _Dr , T _WS . transistor
WSL… Gate line

Claims (4)

A display portion having an organic EL element and a pixel circuit for each pixel,
The pixel circuit includes a first transistor for recording for recording a video signal and a second transistor for driving for driving the organic EL element based on the video signal recorded by the first transistor. ,
The second transistor has a gate, a source, and a drain,
The organic EL device includes an anode, an organic layer, and a cathode,
An upper surface of the source or the drain is formed at least in an area opposite to the anode or the cathode. The method of claim 1,
The display unit includes a storage capacitor connected between the gate and the source or the drain for each pixel,
And the storage capacitor is configured by the source or the drain having an upper surface formed in a region facing the anode or the cathode and the gate. A display portion having an organic EL element and a pixel circuit for each pixel,
The pixel circuit includes a first transistor for recording for recording a video signal and a second transistor for driving for driving the organic EL element based on the video signal recorded by the first transistor. ,
The second transistor has a gate, a source, and a drain,
The organic EL device includes an anode, an organic layer, and a cathode,
The source or the drain has a long side portion including a continuous curved surface. The method of claim 3, wherein
And the source or the drain further has a short side portion including a continuous curved surface.

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